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Fast and Accurate System Model of DDR4 and addressing the Challenges of Transition to DDR5
CDNLive 2018,SEP 7, Cadence User Conference 2018Bengaluru.
Authors,Prabhakaran PalaniappanShanmugapriya DevadasanBuvaneshwaran Chinnadurai
22018 Copyright Mobiveil Inc.9/10/2018
Agenda
§ Mobiveil overview
§ Challenges of increasing DDRx data rate
§ System Level Simulation Model
§ Field solver comparison and selection
§ Parametric Simulation (PDN, SSO, Crosstalk, ISI)
§ Sign-off Report
§ Correlation with measurement results
§ Conclusion and addressing the challenges of transition to DDR5
Mobiveil Technologies India Private Limited
32018 Copyright Mobiveil Inc.9/10/2018
§ Headquartered in Milpitas, California§ Development centers in Chennai, Bengaluru and
Hyderabad in India§ Over 200+ strong Engineering team§ IP and IP centric solution provider for Select Vertical
Markets§ Product Engineering Services
§ ASIC/FPGA Design Implementation§ SoC Verification / Validation§ Board Design§ Signal & Power Integrity§ CAD Layout Design§ ID / Mechanical Design§ Embedded Software
§ High Speed interconnect IP’s § PCIe Gen 1 to Gen4§ sRIO Gen 1 to Gen 3§ 1G/10G Ethernet MAC
§ IP portfolio towards Storage domain§ NVMe § EFC (Enterprise Flash controller)§ LDPC (Error correction for Storage)§ DDR 4/3 and LPDDR 3/2§ HBM2§ Octa/QSPI, HyperFlash
Listed as one of the fastest growing private companies in US – Source “Inc 5000”
42018 Copyright Mobiveil Inc.9/10/2018
Product line/ services
Storage domain
§ Mobiveil IP : FPGA based High performance storage solution§ NVMSTor (Arria10 FPGA based NVMe SSD) § NVMSTor – Ultra (Zynq Ultrascale + based NVMe SSD)
§ High performance SSD development§ Non-standard DIMM development§ SSD validation products
IOT solutions
§ IOT Solution for smart city initiatives§ Smart lighting control and environmental monitoring IOT solution§ Traffic Management System for Smart City initiative
§ IOT Gateway applications
52018 Copyright Mobiveil Inc.9/10/2018
Challenges of increasing DDRx data Rate & decreasing Voltage § PDN noise
§ Eye mask compliance
§ Simultaneous switching bits
§ ISI and cross talk
§ Deskewing of Data bits (including package + PCB delay)
§ Accurate modelling required to match the package and PCB delay (not the length)
§ Measurement and probing points
Note :§ DDR4 data rate – 1600 to 3200 Mbps, 1.2V § DDR5 data rate – 3200 to 6400 Mbps, 1.1V (expected)
62018 Copyright Mobiveil Inc.9/10/2018
DDR4 System simulation Model : Topology
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System SI Simulation topology
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S-parameter Extraction
DDR4: § Frequency sweep: 0- 5GHz§ Data rate: 2400MT/s§ Marker at: 1.2GHz (clock frequency)§ Signals considered: 3 DQbits & 1 DQS
Solver: (For frequency domain result comparison)§ Hybrid§ 3DFEM (Using cut & stitch method : Via transition & pads are modeled using FEM)
Port generation
Capacitor Assignment for PDN:
Cut & Stitch
92018 Copyright Mobiveil Inc.9/10/2018
S-parameter result observation
Field solver comparison : Insertion Loss Field solver comparison : Return Loss Field solver comparison : Time domain
Above Plots indicate the difference in insertion loss and return loss due to inclusion of 3DFEM field solver for complex geometries
102018 Copyright Mobiveil Inc.9/10/2018
Simulation Solver Selection
§ Hybrid solver§ Mixed solver: cut & stitch method (Hybrid & 3DFEM)§ FDTD (Finite Difference Time Domain) - Block box representation of board and direct time domain
simulation
§ Main objective of solver selection is to model the complex simulation system, inorder to extract the results with less simulation time with reasonable accuracy.
§ Based on below observation, FDTD solver consumes lesser simulation time (overall) compared to other approach.
112018 Copyright Mobiveil Inc.9/10/2018
Data bus Simulation:
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Data bus Write Simulation: With & Without PDN
Eye Height is reduced while considering PDN in the simulation due to power noise inclusion.
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Data bus Read Simulation: With & Without PDN
Eye Height is reduced while considering PDN in the simulation due to power noise inclusion.
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Data bus Simulation: Simultaneous Switching bitsPower noise due to switching of data bits
Switching of multiple simultaneous bits injects the noise into the power plane which in turn affects other data bits
Effect of SSO on DQ waveform
Effect of SSO on DQ waveform – Eye diagram
152018 Copyright Mobiveil Inc.9/10/2018
Data bus Simulation: Impact of crosstalk
DQ simulation without considering crosstalk effects
Eye Height is reduced due to Crosstalk.
DQ simulation with crosstalk (1 byte simulation, 1DQ-victim, 7- aggressors)
162018 Copyright Mobiveil Inc.9/10/2018
Data bus Simulation: Impact of ISI
ISI : Effect of one bit transition over another
When Data rate goes up to 6400 MT/s (especially for DDR5), effect of ISI will be very significant. Serdes approach needs to be adopted to ensure eye mask compliance with less BER
172018 Copyright Mobiveil Inc.9/10/2018
Sign-off ReportSystemSI generates report with JEDEC standard compliance.
182018 Copyright Mobiveil Inc.9/10/2018
Measurements
Mobiveil’s NVMStor-Ultra PlatformMeasurement Setup : Keysight technologies MSO9254A
192018 Copyright Mobiveil Inc.9/10/2018
Correlation with Measurements: DQ
Simulation results for a 8x data transfer Measurement for a 8x data transfer
Note : Probing point is exactly the same in both Simulation and measurements
202018 Copyright Mobiveil Inc.9/10/2018
Correlation with Measurements: DQS Read
Simulation results for a 8x data transfer Measurement for a 8x data transfer
Note : Probing point is exactly the same in both Simulation and measurements
212018 Copyright Mobiveil Inc.9/10/2018
Correlation with Measurements : Clock
Simulation results for Clock Signal Measurement of Clock signal
Note : Probing point is exactly the same in both Simulation and measurements
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Correlation with Measurements : Clock Eye
Simulation results for Clock Signal Measurement of Clock signal
Note : Probing point is exactly the same in both Simulation and measurements
232018 Copyright Mobiveil Inc.9/10/2018
Conclusion & Addressing the Challenges in DDR5 using Sigrity§ As DDRx speeds go up, so is the complexity of system modelling and comprehensive
approach is necessary to get an accurate results
§ Sigrity is geared up to address the key challenges discussed earlier and below are the advantages
§ Ability to model every part of the interconnects (package, BGA pad, Edge fingers, via stub etc)
§ Ability to define the VRM characteristics including voltage ripples (using spice constructs) which is generally system specific.
§ Solver choice:
§ FDTD : Fast and accurate Field solver§ 3D FEM for complex geometries§ Cut and stitch approach
§ Ability to include the effects of following components accurately§ PDN noise§ ISI§ SSO§ Cross talk
§ Adoption of SERDES technique (IBIS-AMI modelling) for DDR5 and beyond
242018 Copyright Mobiveil Inc.9/10/2018
Thank you !