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©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.1
Features• Precision fixed operating frequency (70kHz)• Low start-up current(typ. 100uA)• Pulse by pulse current limiting• Over Load protection• Over current protection• Over voltage protecton (Min. 25V)• Internal thermal shutdown function• Under voltage lockout• Internal high voltage sense FET• Latch mode
DescriptionThe SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed fre-quency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and tempera-ture compensated precision current sources for loopcompen-sation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reli-ability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
VO F F S E T
Sense
FET15V/9V
UVLO
Vref
2.5R
5uA
R
1mA
Good Logic
INTERNALBIAS
LEB++++
-
S
R
Q
OSCCLK
7.5V
ShutdownLatch
Power-on Reset/Auto-restart
Rsense
※ LEB : Leading Edge Blanking※ OCL : Over Current Limit
Vcc
GND
Drain
++++
-
14V
27V
++++
-OVP-out
OVP
S
RQ
3
2
1
VCC VREFVOLTAGE
LIMITCIRCUIT
OLP
OCL(VS=1.4V)
TSD(TJ=150)
OVP-out(VCC=27V)
VS
5V
Soft Start 5Feedback 4
KA5M0965QFairchild Power Switch(SPS)
KA5M0965Q
2
Absolute Maximum Ratings
Notes:1. Tj=25°C to 150°C2. Repetitive rating: Pulse width limited by maximum junction temperature3. L=20mH, VDD=50V, RG=27Ω, starting Tj=25°C
Characteristic Symbol Value Unit
Maximum Drain voltage (1) VD,MAX 650 V
Drain-Gate voltage (RGS=1MΩ) VDGR 650 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 36.0 ADC
Single pulsed avalanche energy (3) EAS 950 mJ
Continuous drain current (TC=25°C) ID 9.0 ADC
Continuous drain current (TC=100°C) ID 5.8 ADC
Maximum Supply voltage VCC,MAX 30 V
Input voltage range VFB −0.3 to VSD V
Total power dissipationPD (watt H/S) 170 W
Derating 1.33 W/°C
Operating ambient temperature TA −25 to +85 °C
Storage temperature TSTG −55 to +150 °C
KA5M0965Q
3
Electrical Characteristics (SFET part)(Ta = 25°C unless otherwise specified)
Note:Pulse test: Pulse width < 300µS, duty < 2%
Characteristic Symbol Test condition Min. Typ. Max. UnitDrain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V
Zero gate voltage drain current IDSS
VDS=Max., Rating, VGS=0V - - 50 µA
VDS=0.8Max., Rating,VGS=0V, TC=125°C - - 200 mA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 WForward transconductance (note) gfs VDS=50V, ID=4.5A 5.0 - - SInput capacitance Ciss
VGS=0V, VDS=25V,f=1MHz
- 1200 -pFOutput capacitance Coss - 135 -
Reverse transfer capacitance Crss - 25 -Turn on delay time td(on) VDD=0.5BVDSS, ID=9.0A
(MOSFET switchingtime are essentiallyindependent ofoperating temperature)
- 25 60
nSRise time tr - 75 160Turn off delay time td(off) - 130 270Fall time tf - 70 150
Total gate charge(gate-source+gate-drain) Qg
VGS=10V, ID=9.0A, VDS=0.8BVDSS
- 45 60nCGate-source charge Qgs - 8 -
Gate-drain (Miller) charge Qgd - 22 -
S 1R----=
KA5M0965Q
4
Electrical Charcteristics (SFET part) (Continued) (Ta = 25°C unless otherwise specified)
NOTE:1. These parameters, although guaranteed, are not 100% tested in production2. These parameters, although guaranteed, are tested in EDS(water test) process3. These parameters are indicated Inductor current.
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTIONStart threshold voltage VSTART - 8.4 9 9.6 VStop threshold voltage VSTOP After turn on 14 15 16 VOSCILLATOR SECTIONInitial accuracy FOSC Ta=25°C 61 67 73 kHzFrequency change with temperature (2) - −25°C≤Ta≤+85°C - ±5 ±10 %Maximum duty cycle Dmax - 74 77 80 %FEEDBACK SECTIONFeedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mAShutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 VShutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µASOFT START SECTIONSoft Start Voltage VSS VFB =2V 4.7 5.0 5.3 VSoft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mACURRENT LIMIT(SELF-PROTECTION)SECTIONPeak Current Limit IOVER Max. inductor current 5.28 6.00 6.72 APROTECTION SECTIONThermal shutdown temperature (Tj) (1) TSD - 140 160 - °COver voltage protection voltage VOVP VCC>24V 25 27 29 VTOTAL DEVICE SECTIONStart Up current ISTART VCC=14V - 0.1 0.17 mAOperating supply current (control part only) IOP VCC<28 - 7 12 mA
KA5M0965Q
5
Typical Performance Characteristics
Figure 1. Output Characteristics Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
10-1 100 101
10-1
100
101
※ Note : 1. 250μ s Pulse Test 2. TC = 25
VGSTop : 15 V 10 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 VBottom : 5.0 V
I D , D
rain
Cur
rent
[A]
VDS , Drain-Source Voltage [V]2 4 6 8 10
10-1
100
101
※ Note 1. VDS = 50V 2. 250μ s Pulse Test
-55
150
25
I D ,
Dra
in C
urre
nt [
A]
VGS , Gate-Source Voltage [V]
0 2 4 6 8 10 12 14 160.8
0.9
1.0
1.1
1.2
1.3
VGS = 20V
VGS = 10V
RD
S(on
) , [ Ω
]D
rain
-Sou
rce
On-
Res
ista
nce
ID , Drain Current [A]0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
25150 ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test
I DR
, Rev
erse
Dra
in C
urre
nt [
A]
VSD , Source-Drain Voltage [V]
10-1 100 1010
500
1000
1500
2000
2500
3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd
Crss = Cgd
※ Note ; 1. VGS = 0 V 2. f = 1 MHz
Crss
Coss
Ciss
Cap
acita
nces
[pF]
VDS, Drain-Source Voltage [V]0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
※ Note : ID = 8.5 A
V GS,
Gat
e-S
ourc
e V
olta
ge [V
]
QG, Total Gate Charge [nC]
KA5M0965Q
6
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Note : 1. V
GS = 0 V
2. ID = 250 μ A
BVDS
S, (
Norm
alize
d)Dr
ain-
Sour
ce B
reak
down
Vol
tage
TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Note : 1. VGS = 10 V 2. ID = 6.0 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
100 101 102 10310-1
100
101
102
10 µs
DC10 ms
1 ms
100 µs
Operation in This Area is Limited by R DS(on)
※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]25 50 75 100 125 150
0
2
4
6
8
10
I D, D
rain
Cur
rent
[A]
TC, Case Temperature []
1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1
1 0 - 2
1 0 - 1
1 0 0
※ N o t e s : 1 . Z θ J C ( t ) = 0 . 7 5 / W M a x . 2 . D u t y F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t )
s in g le p u ls e
D = 0 . 5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJ
C(t),
Th
erm
al
Re
sp
on
se
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
KA5M0965Q
7
typical performance characteristics (control part)(These characteristic graphs are normalized at Ta = 25°C)
Fig.1 Operating Frequency
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Source Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.80.85
0.90.95
1
1.051.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.850.9
0.95
11.051.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover
KA5M0965Q
8
typical performance characteristics (continued)(These characteristic graphs are normalized at Ta = 25°C)
Fig.7 Stop Threshold Voltage
0.850.9
0.951
1.051.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.850.9
0.951
1.051.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.850.9
0.95
11.051.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.850.9
0.951
1.051.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
KA5M0965Q
9
typical performance characteristics (continued)(These characteristic graphs are normalized at Ta = 25°C)
Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.850.9
0.951
1.051.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-onResistance
00.5
1
1.52
2.5
-25 0 25 50 75 100 125 150
Rdson
( )
KA5M0965Q
10
Package Dimensions
TO-3P-5L
KA5M0965Q
11
Package Dimensions (Continued)
TO-3P-5L (Forming)
KA5M0965Q
12
Ordering Information
TU : Non Forming TypeYDTU : Forming Type
Product Number Package Rating Operating Temperature
KA5M0965Q-TU TO-3P-5L650V, 9A -25°°°°C to +85°°°°C
KA5M0965Q-YDTU TO-3P-5L(Forming)
KA5M0965Q
13
KA5M0965Q
2/5/01 0.0m 001Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.