Thin film solar cells based on chalcogenides

Bindu Krishnan

Facultad de Ingeniería Mecánica y Eléctrica,

Universidad Autónoma de Nuevo León,

San Nicolás de los Garza, Nuevo León, México. C.P- 66450.

Objectives

Projects

Results

Facilities

Research group

Publications

Thin film materials

CuInSe2 and alloys, SnS, Sb2S3, AgSbSe2 and

alloys, CZTS, CuSbS2 and CdS, TCOs

Low cost and simple methods

Chemical Bath Deposition (CBD)

Spray Pyrolysis

Thermal Evaporation

Laser annealing and device fabrication, plasma treatments

Dr. Bindu Krishnan

Polycrystalline silver antimony selenide for thin films for solar cells - Ciencia Basica

Copper indium selenide thin films by a non-toxic method for solar cell applications – Apoyo licenciatura - Bindu Krishnan

Preparation of semiconducting thin films for solar cell applications by laser irradiation and their characterization using photothermal and photoacoustic techniques –CIAM

Dr. Sadasivan Shaji

Preparation and characterization of nanoparticles by laser ablation in liquid media

Dr. David Avellaneda

SnS based solar cells - Retention

Estructura fotovoltaica p-AgSbSe2/n-CdS: Estudio del efecto de la relación Ag/Sb y sus tratamientos de postdeposicion –Dra. Bindu Krishnan

Preparation and characterization of ZnO thin films by electron beam evapoartion – Dr.Sadasivan shaji

Preparation and characterization of Sn doped ZnO thin films by spray pyrolisis – Dra. Ana Maria Arato

PROMEP – SEP Laser assisted material processing- Dr. Sadasivan

Shaji

Preparation and characterization of ZnO:Al thin films by spray pyrolisis – Dra. Ana Maria Arato

-0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0

-0.20

-0.15

-0.10

-0.05

0.00

0.05

0.10Sb

2S

3-5h, C 5s

Voc

= 556 mV

Isc

=0.08 mA/cm2

I (m

A/c

m2)

V (Volt)

dark

light

CdS – 50 nm

Glass

Sb2S3:C (500 nm)

ITO

- +

light

Emma Cardenas, A. Arato, E. Perez-Tijerina, T.K. Das Roy, G. Alan Castillo, B. Krishnan, Carbon-doped Sb2S3

thin films: Structural, optical and electrical properties, Solar Energy materials and Solar Cells, 93, 33– 36

(2009)

Sb2S3 as PV material

AgSbSe2 and AgSb(S,Se)2 as PV material

Glass/Sb2S3/Ag2Se/Se/Ag

350 C in vacuum for 1 hGlass/Sb2S3/Ag2Se/Ag350 C in vacuum for 1 h

CdS – 50 nm

Glass

p-AgSbSe2 (500 nm)

ITO

- +

light

AgSbSe2 and AgSb(S,Se)2 as PV material

Laser annealing - modification of properties

10 20 30 40 50 60 70

0

100

0

100

2 (degree)

a) Sb2S

3/Glass

unexposed

(240)

(30

1)(2

21

)

(211)(23

0)

(130)

b) Sb2S

3/Glass

Inte

nsity (

a.u

)

80 W/cm2, 2 min

(312)

(501)(141)

(120)

(020)

Photograph of Sb2S3

asprepared and irradiated

Sample

DPSS

LASER

S. Shaji et al Journal of Physics D: Applied Physics, 43 (2010) 075404.

XRD patterns of Sb2S3 before

and after laser irradiation

-0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0

-1.0x10-3

0.0

1.0x10-3

(b) illumination

(a) dark

J (

A/c

m2)

V (Volt) CdS – 50 nm

Glass

Sb2S3:C (500 nm)

ITO

- +

light

A. Arato, et al Thin solid films 517 (2009) 2493-2496

Laser annealing – device formation

CuInSe2 thin films by a non-toxic process:

Glass/In/Se/Cu2Se heated

350 – 400 C in vacuum for 1 h

SeCu2Se

Glass

Glass

CuInSe2

In

350 – 400 C in

vacuum for 1 h

PVDCBD

Accepted for presentation in MRS

spring meeting, 2011

0

50

1000

50

100

20 30 40 50 60 70 800

100

2 (degree)

(1

02)

(112)

(103)

(110)

(101)

(002)

(100)

ZnO -hexagonal

PDF#36-1451

ZnO

Inte

nis

ty (

a.u

)

ZnO:Sb

(004)

(103)

(102)

(100)

(002)

(101)

(110)

(004)

(200)

(112)

(103)

(110)

(102)

(101)

(002)

(100)

EMRS-2008 , Strasbourg, France

ZnO and ZnO:Sb

10 20 30 40 50 60 70

(112)(103)

(110)(102)

(101)

(002)

(100)

---- PDF 36-1451

ZnO 0.1M

Inte

ns

ida

d (

u.a

.)

2

0% Sn

1% Sn

3% Sn

5% Sn

Saida Garcia, Tesis de Maestria, FIME-UANL, 2011

ZnO and ZnO:Sn

ZnO – by spray pyrolysis

Two source thermal evaporation

unit

Vacuum

furnace – 400

C

Constant temperature bath

150 W Solar simulator

Hall Effect measurement system

I-V Characterization unit

DPSS Laser , 8000 m W, 532 nm, CW

DPSS DMP VA532/8

Wavelength (nm) 532

DPSS Laser , 4000 mW,

457 nm, CW

Dr. Bindu Krishnan

Dr. Sadasivan Shaji

Dr. David Avellaneda

Dr. Tushar Kanti Das Roy

Dr. Alan Castillo

Dr. Preethy Rajesh

Dr. Rajesh Nair

Dr. Ana Maria AratoDocotoral, Master’s and Undergraduate students

Modification of optical and electrical properties of chemical bath deposited CdS using Plasma Treatments, G. Gonzalez, B. Krishnan, G.A. Castillo, T.K. Das Roy and S. Shaji, Thin Solid Films 2011. (article in press) doi:10.1016/j.tsf.2011.01.374 .

p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3, C. Garza, S.Shaji, A.Arato, E.Perez Tijerina, G.Alan Castillo, T.K.Das Roy, B.Krishnan, Solar Energy Materials & Solar Cells (article in press) (2010), doi:10.1016/j.solmat.2010.06.011.

Chemically deposited Sb2S3 thin films for optical recording, S. Shaji, A. Arato, J. J. O’Brien, J. Liu , G. Alan Castillo, M I Mendivil Palma, T.K. Das Roy and B. Krishnan, Journal of Physics D: Applied Physics, 43 (2010) 075404.

A. Arato, E. Cárdenas, S. Shaji, J. J. O’Brien, J. Liu , G. Alan Castillo, T.K. Das Roy and B. Krishnan, Sb2S3:C/CdS p-n junction by laser irradiation, Thin solid films 517 (2009) 2493-2496

Emma Cardenas, A. Arato, E. Perez-Tijerina, T.K. Das Roy, G. Alan Castillo, B. Krishnan, Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties, Solar Energy materials and Solar Cells, 93, 33– 36 (2009)

Chemically deposited silver antimony selenide thin films for photovoltaic applications, Jorge Oswaldo, S. Shaji, A. Arato, T.K Das Roy, G.A. Castillo and B. Krishnan, , Mater. Res. Soc. Symp. Proc. Vol. 1165 © 2009 Materials Research Society, 1165-M08-25.

K. Bindu, Ana Maria Arato, E. Cardenaz, T.K Das Roy and G. Alan Castillo, On the structure, morphology, and optical properties of chemical bath deposited Sb2S3 thin films, Applied Surface Science 254 (2008) 3200.

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