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Extended Common Mode LVDS Solutions

Volodymyr Burkhay

TELEFUNKEN Semiconductors GmbH & Co. KG,  Germany

volodymyr.burkhay@telefunkensemi.com

20th SpaceWire  Working Group 

meeting

2013, April 10th, 16:40 – 17:00

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Outline

• Last Meeting State

• Measurement Results 

• Components Development

• Features Development

• Radiation Test Results• Conclusion

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Last Meeting State

TELEFUNKEN Semiconductors Extended Common Mode LVDS

• SOI technologies: 0.35µm, 0.8µm

• robustness: ≤ 200V, no Latch‐Up• efficiency: LV & HV on die, 0.8µm isolation ≤ 100V• suitable for harsh and radiation environments 

• Competitive high‐speed performance and efficiency of LVDS 

• Robustness of RS‐485/422• Common mode rejection to be measured

• Failsafe to be improved

• Cold spare capability to be improved

• Further radiation tests to be done

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Extended Common Mode  Measurements

- 7V

1.2V

12V

GND @ Tx

VICM

GND @ Rx

(Common Mode Voltage)

VID

Data Rate (PRBS23) = 200Mbps,  VID = 200mV,  VICM settings:

VICM = 12VVICM = 1.2VVICM = ‐7V

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Extended Common Mode  Measurements (2)

- 7V

2.4V

6V

10V

0V

- 4V

GND @ Tx

VICM

GND @ Rx

(Common Mode Voltage)

VID

Data Rate (PRBS23) = 200Mbps,  VID = 200mV,  VICM settings:

0V ≤ VICM ≤ 2.4V,  f = 2kHz ‐4V ≤ VICM ≤ 6V,  f = 250Hz ‐7V ≤ VICM ≤ 10V,  f = 150Hz

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Introduced  Components

TF90LVDS031TF90LVDS047 TF90LVDS105

TF90LVDS032TF90LVDS048 TF90LVDS104

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Future  Components

TF90LVDS011TF90LVDS012 TF90LVDS019

TF90LVDS017TF90LVDS018 TF90LVDS019

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Improved Features

• Failsafe Functionality• implement feature in the receiver

• Cold Spare Capability

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Improved Features

• Failsafe Functionality• Cold Spare Capability

• available on LVDS side• implement feature on CMOS side

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TF90LVDS031

-2%

0%

2%

4%

6%

8%

10%

12%

pre

radi

atio

n

5kra

d

10kr

ad

20kr

ad

40kr

ad

100k

rad

afte

r roo

mte

mpe

ratu

rean

neal

afte

r hot

tem

pera

ture

anne

al

drift

High-impedance output current

Differential output voltage

Steady-state output cm voltage

Output short circuit current

Power supply current (disabled)

Power supply current (loaded)

TF90LVDT032

-1%

0%

1%

2%

3%

4%

5%pr

e ra

diat

ion

5kra

d

10kr

ad

20kr

ad

40kr

ad

100k

rad

afte

r roo

mte

mpe

ratu

rean

neal

afte

r hot

tem

pera

ture

anne

al

drift

Output short circuit current

LVDS input termination resistor

LVDS input current @ -7 V

LVDS input current @ +12 V

Power supply current (static)

Power supply current (disabled)

Results• Minor shifts in key data sheet  parameters after TID irradiation  up to 100krad

• None of the component  specifications are violated

• all tested parts keep their  complete functionality

Preliminary TID Radiation Test

Conditions

• TID without applied bias• 5 TID groups• Dose rate: 75 rad/min (60Co source)

• Room temperature annealing

• Hot temperature annealing  100°C for 5 h

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Acknowledgement• Many thanks to ESA/ESTEC for preparing and performing the SEE tests:

• Giorgio Magistrati

• Gianluca Furano

• Farid Guettache

New Results: SEE Heavy Ions Test

Point‐of‐Load Converter

• same technology as LVDS components

• utilizing all technology devices used in LVDS components

• VIN ≤ 26V, IOUT ≤ 3A• SEE 60.7MeV/(mg/cm2): no fails; SET

LVDS Receiver & Driver

• SEE test is being prepared and will follow very soon VOUT

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Conclusion

• Extended Common Mode LVDS is still challenging application

• The components from TELEFUNKEN Semiconductors are  showing good common mode rejection

• High frequency CM‐noise have to be filtered

• TELEFUNKEN Semiconductors is testing new features

• Improved failsafe functionality

• Full cold spare capability• Radiation tests

• Good results until now• SEE test of LVDS will follow• TID test with applied bias will follow

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Thank you for your attention!