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HAL Id: hal-00977721 https://hal.archives-ouvertes.fr/hal-00977721 Submitted on 11 Apr 2014 HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entific research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3 thin films Laurence Méchin, Sheng Wu, Bruno Guillet, Paolo Perna, Cédric Fur, Sylvain Lebargy, C. Adamo, D.G. Schlom, Jean-Marc Routoure To cite this version: Laurence Méchin, Sheng Wu, Bruno Guillet, Paolo Perna, Cédric Fur, et al.. Experimental evi- dence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3 thin films. J. Phys. D: Appl. Phys. - Fast Track Communication, 2013, 46, pp.202001. hal-00977721

Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the

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Page 1: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the

HAL Id: hal-00977721https://hal.archives-ouvertes.fr/hal-00977721

Submitted on 11 Apr 2014

HAL is a multi-disciplinary open accessarchive for the deposit and dissemination of sci-entific research documents, whether they are pub-lished or not. The documents may come fromteaching and research institutions in France orabroad, or from public or private research centers.

L’archive ouverte pluridisciplinaire HAL, estdestinée au dépôt et à la diffusion de documentsscientifiques de niveau recherche, publiés ou non,émanant des établissements d’enseignement et derecherche français ou étrangers, des laboratoirespublics ou privés.

Experimental evidence of correlation between 1/f noiselevel and metal-to-insulator transition temperature in

epitaxial La0.7Sr0.3MnO3 thin filmsLaurence Méchin, Sheng Wu, Bruno Guillet, Paolo Perna, Cédric Fur, Sylvain

Lebargy, C. Adamo, D.G. Schlom, Jean-Marc Routoure

To cite this version:Laurence Méchin, Sheng Wu, Bruno Guillet, Paolo Perna, Cédric Fur, et al.. Experimental evi-dence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxialLa0.7Sr0.3MnO3 thin films. J. Phys. D: Appl. Phys. - Fast Track Communication, 2013, 46,pp.202001. �hal-00977721�

Page 2: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the
Page 3: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the
Page 4: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the
Page 5: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the
Page 6: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the
Page 7: Experimental evidence of correlation between 1/f noise ... · (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/ f noise level and the