Examples

Diffusion with oxidation

• Boron predeposition at 1000oC for 20 minutes

• Drive in a dry oxidizing environment for 2 hours at 1000oC

• Background carrier concentration is 1E14 cm-3

Surface of wafer

After Photolith and Etching

Diffusion

• Boron implant with Q = 9.22x1014 cm-2

• Implant energy = 30keV

• Drive in a dry oxidizing environment for 2 hours at 1000oC

• Background carrier concentration is 1E14 cm-3

After Drive

After Implant and Drive