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Evolution in Complexity Evolution in Transistor Count

Evolution in Complexity

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Evolution in Transistor Count. Evolution in Complexity. Evolution in Speed/Performance. Intel 4004 Micro-Processor. Intel Pentium (II) microprocessor. Design Abstraction Levels. Silicon in 2010. Die Area:2.5x2.5 cm Voltage:0.6 V Technology:0.07  m. The Devices. Jan M. Rabaey. - PowerPoint PPT Presentation

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Page 1: Evolution in Complexity

Evolution in Complexity

Evolution in Transistor Count

Page 2: Evolution in Complexity

Evolution in Speed/Performance

Page 3: Evolution in Complexity

Intel 4004 Micro-Processor

Intel Pentium (II) microprocessor

Page 4: Evolution in Complexity

Design Abstraction Levels

n+n+S

GD

+

DEVICE

CIRCUIT

GATE

MODULE

SYSTEM

Page 5: Evolution in Complexity

Silicon in 2010

Die Area: 2.5x2.5 cmVoltage: 0.6 VTechnology: 0.07 m

Density Access Time(Gbits/cm2) (ns)

DRAM 8.5 10DRAM (Logic) 2.5 10SRAM (Cache) 0.3 1.5

Density Max. Ave. Power Clock Rate(Mgates/cm2) (W/cm2) (GHz)

Custom 25 54 3Std. Cell 10 27 1.5

Gate Array 5 18 1Single-Mask GA 2.5 12.5 0.7

FPGA 0.4 4.5 0.25

Page 6: Evolution in Complexity

Jan M. Rabaey

The Devices

Page 7: Evolution in Complexity

The MOS Transistor

n+n+

p-substrate

Field-Oxyde

(SiO2)

p+ stopper

Polysilicon

Gate Oxyde

DrainSource

Gate

Bulk Contact

CROSS-SECTION of NMOS Transistor

Page 8: Evolution in Complexity

Current-Voltage Relations

Page 9: Evolution in Complexity

Dynamic Behavior of MOS Transistor

DS

G

B

CGDCGS

CSB CDBCGB

Page 10: Evolution in Complexity

THE INVERTERS

Page 11: Evolution in Complexity

DIGITAL GATES Fundamental Parameters

• Functionality• Reliability, Robustness• Area• Performance

– Speed (delay)– Power Consumption– Energy

Page 12: Evolution in Complexity

The CMOS Inverter: A First Glance

VDD

Vin Vout

CL

Page 13: Evolution in Complexity

VTC of Real Inverter

0.0 1.0 2.0 3.0 4.0 5.0Vin (V)

1.0

2.0

3.0

4.0

5.0

Vou

t (V

)

VMNMH

NML

Page 14: Evolution in Complexity

Delay Definitions

tpHL tpLH

t

t

Vin

Vout

50%

50%

tr

10%

90%

tf

VDD VDD

VinVout

M1

M2

M3

M4Cdb2

Cdb1

Cgd12

Cw

Cg4

Cg3

Vout2

Fanout

Interconnect

VoutVin

CLSimplified

Model

Page 15: Evolution in Complexity

CMOS Inverters

Polysilicon

InOut

Metal1

VDD

GND

PMOS

NMOS

1.2 m=2

Page 16: Evolution in Complexity

Scaling Relationships for Long Channel Devices

Page 17: Evolution in Complexity

COMBINATIONAL LOGIC

Page 18: Evolution in Complexity

Overview

Static CMOS

Conventional Static CMOS Logic

Ratioed Logic

Pass Transistor/Transmission Gate Logic

Dynamic CMOS Logic

Domino

np-CMOS

Page 19: Evolution in Complexity

Static CMOS

VDD

VSS

PUN

PDN

In1In2In3

F = G

In1

In2In3

PUN and PDN are Dual Networks

PMOS Only

NMOS Only

Page 20: Evolution in Complexity

Example Gate: NAND

Page 21: Evolution in Complexity

Transistor Sizing

VDD

AB

C

D

DA

B C

12

22

6

612

12

F

• for symmetrical response (dc, ac)• for performance

Focus on worst-case

Input Dependent

Page 22: Evolution in Complexity

4-input NAND Gate

Out

In1 In2 In3 In4

In3

In1

In2

In4

In1 In2 In3 In4

VDD

Out

GND

VDD

In1 In2 In3 In4

Vdd

GND

Out

Page 23: Evolution in Complexity

Ratioed Logic

VDD

VSS

PDNIn1In2In3

F

RLLoad

VDD

VSS

In1In2In3

F

VDD

VSS

PDNIn1In2In3

FVSS

PDN

Resistive DepletionLoad

PMOSLoad

(a) resistive load (b) depletion load NMOS (c) pseudo-NMOS

VT < 0

Goal: to reduce the number of devices over complementary CMOS

Page 24: Evolution in Complexity

Pseudo-NMOS

VDD

A B C D

FCL

VOH = VDD (similar to complementary CMOS)

kn VDD VTn– VOLVOL

2

2-------------–

kp

2------ VDD VTp– 2=

VOL VDD VT– 1 1kpkn------–– (assuming that VT VTn VTp )= = =

SMALLER AREA & LOAD BUT STATIC POWER DISSIPATION!!!

Page 25: Evolution in Complexity

Dynamic Logic

Mp

Me

VDD

PDN

In1In2In3

OutMe

Mp

VDD

PUN

In1In2In3

Out

CL

CL

p networkn network

2 phase operation:• Evaluation

• Precharge

Page 26: Evolution in Complexity

Example

Mp

Me

VDD

Out

A

B

C

• N + 1 Transistors

• Ratioless

• No Static Power Consumption

• Noise Margins small (NML)

• Requires Clock

Page 27: Evolution in Complexity

Cascading Dynamic Gates

Mp

Me

VDD

Mp

Me

VDD

In

Out1 Out2

Out2

Out1

In

V

t

V

VTn

(a) (b)

Only 0 1 Transitions allowed at inputs!

Page 28: Evolution in Complexity

Domino Logic

Mp

Me

VDD

PDN

In1In2

In3

Out1

Mp

Me

VDD

PDN

In4

Out2

Mr

VDD

Static Inverterwith Level Restorer

Page 29: Evolution in Complexity

Where Does Power Go in CMOS?

• Dynamic Power Consumption

• Short Circuit Currents

• Leakage

Charging and Discharging Capacitors

Short Circuit Path between Supply Rails during Switching

Leaking diodes and transistors

Page 30: Evolution in Complexity

SEQUENTIAL LOGIC

Page 31: Evolution in Complexity

Master-Slave Flip-Flop

S

R

Q

Q Q

QS

R

Q

Q

J

K

MASTER SLAVE

QJ

K Q

PRESET

CLEAR

SI

RI

Page 32: Evolution in Complexity

CMOS Clocked SR- FlipFlop

VDD

Q

Q

RS

M1 M3

M4M2

M6

M5 M7

M8

Page 33: Evolution in Complexity

2 phase non-overlapping clocks

D

In

t12

Page 34: Evolution in Complexity

PipeliningR

EG

REG

R

EG

log.

RE

G

REG

RE

G

.

RE

G

RE

G

logOut Out

a

b

a

b

Non-pipelined version Pipelined version

Page 35: Evolution in Complexity

Arithmetic Building Blocks

Page 36: Evolution in Complexity

A Generic Digital Processor

MEM ORY

DATAPATH

CONTROL

INPU

T-O

UT

PUT

Page 37: Evolution in Complexity

Building Blocks for Digital Architectures

Arithmetic unit- Bit-sliced datapath (adder , multiplier,

shifter, comparator, etc.)

Memory- RAM, ROM, Buffers, Shift registers

Control- Finite state machine (PLA, random logic.)- Counters

Interconnect- Switches- Arbiters- Bus

Page 38: Evolution in Complexity

Bit-Sliced Design

Bit 3

Bit 2

Bit 1

Bit 0

Reg

ister

Add

er

Shift

er

Mul

tiple

xer

Control

Dat

a-In

Dat

a-O

ut

Tile identical processing elements

Page 39: Evolution in Complexity

Layout Strategies for Bit-Sliced Datapaths

Well

ControlWires (M1)

Well

Wires (M1)

GND VDDGND

GND

VDD

GND

Approach I —Signal and power lines parallel

Approach II —

Signal and power lines perpendicular

Sign

als W

ires

(M2)

Sign

als W

ires

(M2)

Page 40: Evolution in Complexity

Layout of Bit-sliced Datapaths

Page 41: Evolution in Complexity

COPING WITH INTERCONNECT

Page 42: Evolution in Complexity

Impact of Interconnect Parasitics

• Reduce Reliability

• Affect Performance

Classes of Parasitics

• Capacitive

• Resistive

• Inductive

Page 43: Evolution in Complexity

Using Cascaded Buffers

C2C1

Ci

CL

1 u u2 uN-1

In Out

uopt = e

Page 44: Evolution in Complexity

ISSUES IN TIMING

Page 45: Evolution in Complexity

The Ellmore Delay

Page 46: Evolution in Complexity

The Clock Skew Problem

CL1 R1 CL2 R2 CL3 R3In Out

t’ t’’ t’’’

tl,min

tl,max

tr,min

tr,max

ti

Clock Edge Timing Depends upon Position

Clock Rates as High as 500 Mhz in CMOS!