EUV Platform Readiness Progress and Challenges

Klaus Schuegraf, Daniel Brown, Uwe Stamm & Christian Wagner

Maui, Hawaii June 25, 2014

2014 International Workshop on EUV Lithography

Confidential

Agenda

June 25, 2014

Slide 2

• EUV overview

• Source power and availability technology development

Confidential

EUV overview: Progress toward production insertion

• Multiple customers are qualifying EUV for insertion at the 10 nm logic node

• For process development, customers typically require 100 wafers per day,

increasing to 500 wafers per day on average for production qualification

• We have provided customers with that process development capability

• In 2016 we will provide our customers with the productivity needed for volume

production

Confidential

• 6 NXE:3300B systems fully qualified

and shipped to customers

• 5 more NXE:3300B systems being

integrated

• 4th generation NXE system

(NXE:3350B) integration ongoing NXE:3300B

June 25, 2014

Slide 3

NXE:3300B systems are exposing at customer sites Confidential

June 25, 2014

Slide 4

NXE:3300B resolution for single exposures Dense line spaces, regular and staggered contact holes

Confidential

13nm HP

14nm HP

Dipole30,

Chemically Amplified Resist

(CAR)

Quasar 30 (CAR)

17nm HP

18nm HP

18nm HP

19nm HP

Large Annular (CAR)

Dipole45,

Inpria Resist

13nm HP

14nm HP

June 25, 2014

Slide 5

EUV meets aggressive 2D logic imaging requirements

0

10

20

30

40

50

60

70

80

20 nm 16 nm 10 nm 7 nm

CD

[nm

] CD requirements by node

Tip-to-tip Tip-to-line Lines and spaces

31nm

22nm

16nm

* Single Expose (SE) using high dose resist @ ~50mJ/cm2

EUV (SE)*

Confidential

June 25, 2014

Slide 6

Full wafer

Matched Machine Overlay

NXE:3300B – NXT:1950i

No subrecipes used

Good matched machine overlay performance on

multiple systems (NXE:3300B to immersion)

Systems

Matc

hed M

achin

e

Overlay [

nm

]

10 nm99.7%x: 3.4 nmy: 3.3 nm

MMO S2F Stepper Filtered Machine 3

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

1 2 3 4

Overlay X Overlay Y

Confidential

June 25, 2014

Slide 7

Laser Produced Plasma (LPP) source architecture

Pre-Pulse Is

ola

tor

Pre

Amp PA Seed o

ptics

op

tics

PA op

tics

op

tics

PA op

tics

Vessel

with Collector and Tin Droplet

Generator

Focusing

Optics

Beam Transport System Fab Floor

Sub-Fab Floor Drive Laser

PA op

tics

Ele

ctr

on

ics

Ele

ctr

on

ics

CO2 laser

operating at

high repetition

rate

June 25, 2014

Slide 8

Confidential

Ramping source production for NXE:3300B vessels Confidential

June 25, 2014

Slide 9

Multiple development and integration sources

supporting NXE:3300B source production Confidential

NXE:3300B

Drive Laser NXE:3300B

Source

June 25, 2014

Slide 10

NXE:3100 continues to be used for cycles of learning 6 systems operational with source availability >70%

Confidential

Cu

mu

lati

ve

wa

fers

ex

po

se

d o

n N

XE

:31

00

2011 2012 2013 2014

June 25, 2014

Slide 11

NXE:3100: collector lifetime is key to high availability Field collector performance improved with changes in capping layer

technology and vacuum control

Confidential

No Cap

Cap type B

Champion

Cap type A

• 70 Gpulse average lifetime in 2013 for NXE:3100 field

sources

• Initial usage ~10Gpulse per month

• Lifetime requirement >100Gpulse in high volume use

• 5steradian near-normal incidence

graded multilayer coated collector

• Collector reflectivity maintained using

hydrogen to prevent ion damage and

tin vapor deposition

June 25, 2014

Slide 12

Agenda

• EUV overview

• Source power and availability technology development

Confidential

June 25, 2014

Slide 13

MOPA Prepulse LPP source architecture for NXE:3300B

Pre-Pulse Is

ola

tor

Pre

Amp PA Seed o

ptics

op

tics

PA op

tics

op

tics

PA op

tics

Power Amplifier

Vessel

With Collector, Droplet

Generator and Metrology

Focusing

Optics

Beam Transport System Fab Floor

Sub-Fab Floor

MOPA - Master Oscillator Power Amplifier

Master Oscillator

PA op

tics

CO2 laser

operating at

50kHz

Ele

ctr

on

ics

Ele

ctr

on

ics

Controllers for Dose

and Prepulse

June 25, 2014

Slide 14

Confidential

Source power

Drive laser power

Conversion efficiency

Dose margin

Optical transmission

Source availability

Drive laser reliability

Droplet generator reliability & lifetime

Automation

Collector protection

Source power and availability drive productivity Technology development work is ongoing to improve all aspects

Confidential

Focus of today’s

presentation

June 25, 2014

Slide 15

Source power scaling Confidential

June 25, 2014

Slide 16

Scaling parameter

EUV Power in Burst (W) 40 80 250

Laser Power (kW) 20 26 43

Conversion Efficiency (%) 2.5 3.5 4.5

Dose margin (%) 35 20 10

Key scaling parameters are:

• Laser power

• Conversion efficiency

• Dose margin

Drive laser: High-power amplifier chain validated Confidential

HPDL Top View

Seed table

• First HPDL prototypes delivered and integrated with

current seed table

• >30kW total CO2 power

• Good beam quality

• Together with new seed system higher EUV power

June 25, 2014

Slide 17

Conversion efficiency: Optimizing pre-pulse to create a

more efficient target

Target expansion fills main

pulse beam waist

Confidential

Prepulse (low energy)

Mainpulse (high energy)

Target shape changes

from droplet to disk

June 25, 2014

Slide 18

High CE demonstrated with optimized pre-pulse

June 25, 2014

Slide 19 ~4% conversion efficiency achieved at high duty cycle Confidential

Slide 19

Data taken on MOPA Prepulse development source

High CE requires control of:

• Target conditioning

• Targeting dynamics

• Focus control

Advanced Seed

Standard Seed

Best conversion

efficiency achieved at

target size of ~400µm CE>~4%

Dose margin: Closing the gap between ‘open loop’ and

stabilized power Confidential

Closed Loop Power Po

we

r Margin

Time • Plasma and gas-dynamic forces distort

droplet trajectories causing mis-

targeting, low CE and energy instability

• Controls that compensate for these

forces enable closed loop operation

with reduced margin

• Margin is the difference between

unstabilized open loop power and

stabilized closed loop power

• Required for dose control

0 1 2 3 4 5 6-1

-0.5

0

0.5

1

Ave

rage

Dos

e E

rror

[%

]

Time [Hours]

Open Loop Power

June 25, 2014

Slide 20

• Comparison: EUV stabilization energy controller vs current controller

• Maximizing available power with reduced dose margin using advanced

dose control software

0 50 100 150 200-60

-50

-40

-30

-20

-10

0

10

Time [s]

Dose E

rror

[%]

Advanced controller demonstrated at <10% dose margin Existing controller: good performance at ~35% margin

Tests on MOPA/Pre-pulse development source

Confidential

Current controller

35% dose margin: In-spec

June 25, 2014

Slide 21

150 200 250 300 350 400 450-60

-50

-40

-30

-20

-10

0

10

Time [s]

Dose E

rror

[%]

~75W open loop power

70W stabilized

~60W open loop power

40W stabilized

EUV Stabilization controller

6% dose margin: In-spec

Current controller

6% dose margin: Out-of-spec

0 1 2 3 4 5 6-4

-3

-2

-1

0

1

2

3

4

Time [min]

Do

se

Err

or

[%]

0 1 2 3 4 5 666

67

68

69

70

71

72

73

74

Time [min]

Po

we

r [W

]

Source power

Drive laser power

Conversion efficiency

Dose margin

Optical transmission

Source availability

Drive laser reliability

Droplet generator reliability & lifetime

Automation

Collector protection

Source power and availability drive productivity Technology development work is ongoing to improve all aspects

Confidential

Focus of today’s

presentation

June 25, 2014

Slide 22

Automation: Stable power, good dose control NXE:3300B stand-alone source under full automation for

improved availability

Confidential

0 500 1000 1500 2000 2500 3000 3500 4000

38

40

42

44

time [sec]

Pow

er

[W]

10-2

10-1

100

0

20

40

60

80

100

Dose Error [%]

Good D

ies (

Exposure

s)

[%]

Error

1.0% Error

99.9%

99.9% die yield

(simulated)

~40W stable power

(x, y, z, t and E loops

closed)

Simulated wafer lot exposures

at 30mJ/cm2 resist dose

June 25, 2014

Slide 23

No collector reflectivity degradation after >5 Gpulses NXE:3300B source collector protection test, all control loops closed

Confidential

Far-field EUV image

Initial Far-field EUV image

after 6.3Gp

NXE:3300B stand-alone

source operating in San Diego • ~40W, 90% EUV duty cycle

• All control loops closed

• Simulated wafer exposure lots

at 25mJ/cm2 dose

~500 simulated wafer exposures over

6.3Gpulses

6.3Gp 0Gp

June 25, 2014

Slide 24

In-situ collector cleaning Effectiveness of product configuration confirmed

Confidential

June 25, 2014

Slide 25

Off-line cleaning using NXE:3300B source

vessel with product configuration hardware Reflectivity restored within 0.8% of original

Cleaning in off-line MOPA Prepulse development vessel

Field collector

cleaned in

NXE:3300 source

vessel test rig

Start End

Start End

Source power

Drive laser: high-power amplifier chain validated

High conversion efficiency of ~4% demonstrated

Dose margin <10% with advanced controller demonstrated

Optical transmission

Source availability

Drive laser reliability

Droplet generator reliability & lifetime

Full automation with good dose control demonstrated

Collector protection: protection & in-situ cleaning validated

Summary: Source power and availability technology

development for improved productivity Confidential

June 25, 2014

Slide 26