2017 International Workshop on EUV Lithography , Berkeley, CA, June 15th, 2017

EUV Lithography : Progress in LPP

Source Power Scaling and Availability

Igor Fomenkov

ASML Fellow

• Background and History

• EUV Imaging

• EUV Principles of Generation

• EUV Source: Architecture

• EUV Sources in the Field

• Performance Outlook

• Summary

Outline

EUVL 2017

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Slide 2

Background and History

EUVL 2017

Slide 3

Public

NAkCD

1

NA = n sina k1

theoretical limit (air):

NA=1

practical limit:

NA=0.9

theoretical limit (immersion):

NA ≈ n (~1.7)

k1 is process parameter

traditionally: >0.75

typically: 0.3 – 0.4

theoretical limit: 0.25

KrF-Laser : 248nm

ArF-Laser: 193 nm

ArF-Laser (i): 193 nm

EUV sources: 13.5 nm

Critical Dimension

Why EUV? - Resolution in Optical Lithography

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Slide 4

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Slide 5

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EUV development has progressed over 30 years from NGL to HVM insertion

’84

1st lithography

(LLNL, Bell Labs,

Japan)

USA

40 nm hp

70 nm

L&S

Japan

80 nm

160 nm

NL

28 nm Lines and spaces

USA

5 mm

ASML starts

EUVL research

program

ASML ships 1st

pre-production NA

0.25 system

NXE:3100

ASML ships 1st

NA 0.33 system

NXE:3300B

NL

13 nm L/S

ASML ships 1st

HVM NA0.33 system

NXE:3400B

NL

7 nm and 5 nm

node structures

’85 ’86 ’87 ’88 ’89 ’90 ’91 ’92 ’93 ’94 ’95 ’96 ’97 ’98 ’99 ’00 ’01 ’02 ’03 ’04 ’05 ’06 ’07 ’08 ’09 ’10 ’11 ’12 ‘13 ’14 ’15 ’16 ’17 ’18

NL

19 nm Lines and spaces

ASML ships

2 alpha demo tools:

IMEC (Belgium) and

CNSE (USA)

USA NL NL NL

0

5

10

15

20

25

30

35

40

45

50

2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

CD

(n

m)

EUV resist: 4x resolution improvement in ten years 12nm half pitch resolved with non-CAR resist on 0.33 NA EUV

ADT, NXE:3100, NXE:33x0, NXE:3400B as measured by ASML/ IMEC,

Exposure Latitude > 10% and / or Line Width Roughness < 20%, Dose ≤ 35mJ/cm2

ADT NXE:3100 NXE:33x0 NXE:3400B

Non-CAR resist

Half Pitch: 12nm

Slide 6

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55 WPH 125 WPH

185 WPH

145 WPH

NXE:3300B

NXE:3350B

NXE:next

High-NA

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EUV roadmap

Supporting customer roadmaps well into the next decade

NXE:3400B

Products under study

2015

2013

introduction

2017

Overlay & Focus upgrade

0.33 NA family:

upgrades

possible to

optimize capital

efficiency

High-NA EUV targets <8nm resolution Relative improvement:5X over ArFi, 40% over 0.33 NA EUV

2005 2015 1995 2010 1990 0.01

0.10

1.00

2020 2000

Year of introduction

i-Line 365 nm

KrF 248 nm

ArF 193 nm

ArFi 193 nm

Major technology step

(e.g. source, mirror)

EUV 0.33 EUV >0.5

EUV 0.25

EUV 13.5 nm

Engineering optimization of numerical

aperture resulting in a resolution step

comparable to historical wavelength

transitions

Slide 8

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EUV Imaging – NXE:3400B

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Overlay

Imaging/Focus

Productivity

NXE:3400B: 13 nm resolution at full productivity Supporting 5 nm logic, <15nm DRAM requirements

Resolution 13 nm

Full wafer CDU < 1.1 nm

DCO < 1.4 nm

MMO < 2.0 nm

Focus control < 60 nm

Productivity ≥ 125 WPH

Overlay set up

Set-up and modeling

improvements

Reticle Stage

Improved clamp flatness

for focus and overlay Projection Optics

Continuously Improved

aberration performance

New Flex-illuminator

Sigma 1.0 outer sigma,

reduced PFR (0.20)

Leveling (Optional)

Next generation UV LS

reduced process dependency Wafer Stage

Flatter clamps, improved

dynamics and stability

SMASH-X prepared

Metro frame prepared

for Smash-x

Slide 10

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200,000

400,000

600,000

800,000

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1,200,000

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16

To

tal n

um

be

r o

f w

afe

rs e

xp

osed

Week

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>1M wafers exposed on NXE:33x0B at customer sites Currently 14 systems running in the field. First system was shipped Q1 2013

>1 Million EUV Wafers at Customers

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Significant progress in system availability is recognized

by our customers

Source: Intel,TSMC & SK hynix presentations

at EUVL Symposium 2016, and SPIE 2017.

Slide 13

13nm LS and 16nm IS: full-wafer CDU 0.3 nm meets 5 nm logic requirements, with excellent process windows

13

nm

LS

le

afs

ha

pe d

ipo

le

16

nm

IS

s

ma

ll-c

on

ve

nti

on

al

(s_

ou

t =

0.5

)

non-CAR resist

CAR resist

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NXE:3400B illuminator: increased pupil flexibility at full throughput

Field Facet Mirror

Pupil Facet Mirror Intermediate

Focus

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New flex illuminator on NXE:3400B 13nm resolution without light loss at 20% pupil fill ratio

First illuminators qualified and

currently being integrated in a system

The animation shows the 22 standard

illumination settings. They are measured in the

illuminator work center, using visible light and a

camera on top of the illuminator

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Slide 16

Two-fold approach to eliminate reticle front-side defects

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1. Clean scanner

Reflected

illumination

EUV Reticle (13.5nm)

Reticle

2. EUV pellicle

particle

Pellicle

Without Pellicle With Pellicle

Slide 17

Pellicle film produced without defects that print

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Improvement from Q3 2016 to now

# o

f defe

cts

Defect size in um

Zero defects

450

400

350

300

250

200

150

100

50

0

> 40

> 25-40

> 10-25

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ASML pellicle confirmed for use in NXE:3400B to at least 140W

Y-nozzle cooling can extend pellicle to >205W

NXE:3400B @ 140W

Power ramp in 4 steps: 95W, 115W, 125W, 140W

22nm PRP-i reticle with pellicle

0

20

40

60

80

100

120

140

160

0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000

So

urc

e p

ow

er

@ i

f (

W)

Wafer number

Pellicle removed from

scanner for analysis

Slide 19

DGL membrane as spectral filter located at Dynamic Gas Lock (DGL)

suppresses DUV and IR, plus removes outgassing risk to POB EUVL 2017

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Effective DUV and IR suppression DGL membrane (~ 50 x 25 mm)

>100x DUV suppression

>4x IR suppression

EUV: Principles of Generation

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Laser Produced Plasma Density and Temperature Nishihara et al. (2008)

EUV

LPP

Ion density ~ 1017 – 1018 #/cm3

Temperature ~ 30 -100 eV

Slide 21

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Fundamentals: EUV Generation in LPP Laser produced plasma (LPP) as an EUV emitter

Properties determined by ratio of plasma-

to target size, laser pulse energy and

droplet diameter

Focused

Laser radiation

Tin droplet

Evaporation

Dense hot

Plasma EUV radiation

Slide 22

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Plasma simulation capabilities Main-pulse modeling using HYDRA

Main-pulse

shape

1D simulations are fast and useful

for problems that require rapid

feedback and less accuracy

3D:

+ real asymmetric

profile

2D and 3D

simulations are run

for the full duration

of the Main pulse.

Results include

temperature,

electron density,

spectral emission,

etc.

Target

Sn target using a real

irradiance distribution

1D:

real pulse shape

2D:

+ symmeterized

beam profile

Electron density (top half) with laser light (bottom half)

500μm 500μm 500μm

500

μm

Po

we

r (a

rb. U

nits)

Time

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Slide 23

Simulation of the EUV source

The plasma code’s outputs

were processed to produce

synthetic source data. The

comparison to experiments

helps to validate the code and

understand it’s accuracy.

Measured Shadowgrams

Simulated Shadowgrams

Simulated EUV spectra

Emission and debris anisotropy

Collector rim

Reflected laser modeling C

onve

rsio

n E

ffic

iency (

%)

Target Diameter (µm)

Flu

en

ce (

J/c

m2

/S/m

m)

Wavelength (nm)

Simulation

Conversion Efficiency

Slide 24

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EUV Source: Architecture

and Operation Principles

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• Key factors for high source power are: High input CO2 laser power

High conversion efficiency (CO2 to EUV energy)

High collection efficiency (reflectivity and lifetime)

Advanced controls to minimize dose overhead

Vessel

With Collector, Droplet

Generator and Metrology

Focusing Optics

Ele

ctr

on

ics

Ele

ctr

on

ics

Controllers for Dose

and Pre-pulse

* ∝ EUV power

(source/scanner interface, [W]) CO2 power [W]

Conversion

Efficiency [%] 1 – Dose

Overhead [%] *

Pre-Pulse Is

ola

tor

Pre Amp PA Seed

op

tics

op

tics

PA op

tics

op

tics

PA op

tics

Power Amplifier

Beam Transport System Fab Floor

Sub-Fab Floor Master Oscillator

PA op

tics

Pre-pulse

requires seed

laser trigger

control

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LPP: Master Oscillator Power Amplifier (MOPA)

Pre-Pulse Source Architecture

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Droplet Generator: Principle of Operation

• Tin is loaded in a vessel & heated above melting point

• Pressure applied by an inert gas

• Tin flows through a filter prior to the nozzle

• Tin jet is modulated by mechanical vibrations

Nozzle

Filter

Modulator Gas

Sn

0 5 10 15 20 25 30-10

-5

0

5

10

Dro

ple

t p

ositio

n,

mm

Time, sec

140 mm 50 mm 30 mm Pressure: 1005 psi Frequency: 30 kHz Diameter: 37 µm Distance: 1357 µm Velocity: 40.7 m/s

Pressure: 1025 psi Frequency: 50 kHz Diameter: 31 µm Distance: 821 µm Velocity: 41.1 m/s

Pressure: 1025 psi Frequency: 500 kHz Diameter: 14 µm Distance: 82 µm Velocity: 40.8 m/s

Pressure: 1005 psi Frequency: 1706 kHz Diameter: 9 µm Distance: 24 µm Velocity: 41.1 m/s

Fig. 1. Images of tin droplets obtained with a 5.5 μm nozzle. The images on the left were obtained in

frequency modulation regime; the image on the right – with a simple sine wave signal. The images

were taken at 300 mm distance from the nozzle.

Short term droplet position stability σ~1mm

16 mm

NXE:3xx0 EUV Source: Main modules Populated vacuum vessel with tin droplet generator and collector

Increasing

Droplet Generator

Pressure

Droplet Spacing at 80 kHz

Slide 28

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EUV Source: MOPA + Pre-Pulse

Pre-pulse transforms tin droplet into

“pancake/mist” that matches

CO2 main pulse beam profile

MOPA = Master Oscillator Power Amplifier

PP = Pre-Pulse

MP = Main Pulse

CO2 pre-pulse beam , Droplet (<30um) CO2 beam

Pre-pulse

CO2 beam

Main pulse CO2 main pulse beam ,

Pancake/mist matched to main pulse

>5% conversion efficiency achieved

PP & MP Laser

Droplet stream

~80 m/s

Dropletz (mm)

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Collector Protection by Hydrogen Flow

Sn droplet / plasma

H2 flow

Reaction of H radicals with Sn to form SnH4, which can be pumped away. Sn (s) + 4H (g) SnH4 (g)

• Hydrogen buffer gas (pressure

~100Pa) causes deceleration of ions

• Hydrogen flow away from collector

reduces atomic tin deposition rate

Laser beam

IF

Sn catcher

DG

EUV collector Temperature controlled

• Vessel with vacuum pumping to

remove hot gas and tin vapor

• Internal hardware to collect micro

particles

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EUV Collector: Normal Incidence

• Ellipsoidal design

• Plasma at first focus

• Power delivered to exposure tool at second focus (intermediate focus)

• Wavelength matching across the entire collection area

Normal Incidence Graded Multilayer Coated Collector

Slide 32

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Productivity increases via source availability Secured EUV power is matched with increasing availability

Productivity = Throughput(EUV Power) Availability

Source power

from 10 W to > 250 W

Drive laser power from 20 to 40 kW

Conversion efficiency (CE) from 2 to 6% (Sn droplet)

Dose overhead from 50 to 10%

Optical transmission

Source availability

Drive laser reliability

Droplet generator reliability & lifetime

Automation

Collector protection

EUVL 2017

EUV Power= (CO2 laser power CE transmission)*(1-dose overhead)

Raw EUV power

EUV Sources in the Field

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Productivity targets for HVM Source contribution to productivity

Conversion

efficiency

Dose

margin

Drive laser

power

Laser to

droplet

control

Optical

transmission

Overhead

optimization

Exposure

dose

Stage accuracy

at high speed

Automation

Collector

maintenance

Droplet

generator

maintenance

Drive laser

reliability

>1500 WPD

in 2016

Productivity

0

20

40

60

80

100

120

140

2014 2015 2016 2017target

2018target

Thro

ugh

pu

t [W

PH

] at

20

mJ/

cm2

Productivity roadmap towards >125 WPH in place Slide 35

Public

Source power increase Source power increase

Transmission improvement

Faster

wafer swap

resulting in

~8 wph gain

Transmission

improvement

Source power scaling

continues to support

productivity roadmap

Slide 35

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2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 20180

25

50

75

100

125

150

175

200

225

250

3100 NOMO (shipped)

3100 MOPA (research)

3100 MOPA+PP (research)

3300 MOPA+PP (shipped)

3400 MOPA+PP (research)

3400 MOPA+PP (Shipping 2017)

Do

se c

on

tro

lled

EU

V p

ow

er

(W)

Year

>205W is now demonstrated,

shipping planned end of 2017

Progress for 2017: >205W demonstrated

∝ EUV power

(source/scanner interface, [W]) CO2 power [W]

Conversion

Efficiency [%] * 1 – Dose

Overhead [%] *

Increase average and peak laser power

Enhanced isolation technology

Advanced target formation technology

Improved dose-control technique

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Source power: 250W demonstrated

10x improvement in five years

250W with dose in specifications

obtained on development source

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Power Amplifier Chain Increases CO2 Power Good beam quality for gain extraction and EUV generation

Key technologies: 1. Drive laser with higher power capacity 2. Gain distribution inside amplification chain 3. Mode-matching during beam propagation 4. Isolation between amplifiers 5. Metrology, control, and automation

0

5000

10000

15000

20000

25000

30000

35000

40000

0 50 100 150 200 250 300 350

PA

s o

utp

ut

(W)

Seed power (W)

Power Amplifiers

PA1

PA2

PA3

2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 20180

25

50

75

100

125

150

175

200

225

250

3100 NOMO (shipped)

3100 MOPA (research)

3100 MOPA+PP (research)

3300 MOPA+PP (shipped)

3400 MOPA+PP (research)

3400 MOPA+PP (Shipping 2017)

Do

se

co

ntr

oll

ed

EU

V p

ow

er

(W)

Year

0

0.5

1

1.5

2

2.5

Laser Gain (ratio to 3300 source)

3400

laser gain 3300

laser gain

MOPA + Pre-pulse

Seed System with high

power pre-amplification

Scaling laser power requires laser isolation advances

From NXE:3300 to NXE:3400, enhanced isolation gives stable >2x increase laser gain

Unstable laser onset without enhanced isolation

MOPA + Pre-pulse

Seed System

with pre-amplification

Beam Transport &

Final Focus

Vessel NXE:3300B Drive Laser

4-stage power amplification Improved thermal

management

NXE:3400 Drive Laser

High-power 4-stage power amplification

+Enhanced

isolation

EUVL 2017

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Slide 39

0

1

2

3

4

5

6

7

Conversion Efficiency vs target type

Convers

ion e

ffic

iency (

%)

2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 20180

1

2

3

4

5

6

3100 NOMO (shipped)

3100 MOPA (research)

3100 MOPA+PP (research)

3300 MOPA+PP (shipped)

3400 MOPA+PP (research)

3400 MOPA+PP (Shipping 2017)

Co

nvers

ion E

ffic

iency (

%)

Year

Introduction

of prepulse

Advanced target

formation with

enhanced

isolation

Enhanced isolation leads to >205W EUV power via advanced target formation for high CE

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Slide 40

Open Loop Performance >30% With enhanced

isolation

Before enhanced

isolation

Reduced

Sigma

3.9mJ 5.1mJ

Benefits of enhanced isolation:

• Higher, stable CO2 laser power lower dose overhead

• High conversion efficiency operation higher pulse energy

Dose

ove

rhe

ad

requ

ire

d

to m

ee

t d

ose

sp

ec

Without

enhanced

isolation

30%

20%

10% <10.5%

~30%

With

enhanced

isolation

His

togra

m

His

togra

m

Enhanced isolation improves EUV performance

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Comparing two dose-control techniques at 210W: higher in-spec power with improved dose-control technique

0 500 1000 1500 2000 2500 3000 3500 40000

2

4

Time [s]

Dose E

rror

[%]

0 500 1000 1500 2000 2500 3000 3500 4000200

210

220

Time [s]

Pow

er

(M

ean)

[W]

0 200 400 600 800 1000 1200200

210

220

Time [s]

Pow

er

(M

ean)

[W]

0 200 400 600 800 1000 12000

2

4

Time [s]

Dose E

rror

[%]

Previous dose-control technique Improved dose-control technique

One Hour In Spec

209W, 61.6% die yield 210W in-spec

On the same EUV source, back-to-back performance comparing

previous and improved dose-control techniques demonstrates

higher in-spec power can be delivered with reduced overhead

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Slide 43

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Productivity targets for HVM Source contribution to productivity

Conversion

efficiency

Dose

margin

Drive laser

power

Laser to

droplet

control

Optical

transmission

Overhead

optimization

Exposure

dose

Stage accuracy

at high speed

Automation

Collector

maintenance

Droplet

generator

maintenance

Drive laser

reliability

>1500 WPD

in 2016

Productivity

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Hydrogen gas central to tin management strategy

Hydrogen performs well

for all these tasks!

Requirements for buffer gas:

Stopping fast ions (with high

EUV transparency)

Heat transport

Robust against morphology

Sn etching capability

High heat capacity High thermal conductivity

High EUV transparency

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Primary debris

Primary debris – directly from plasma and before

collision with any surface:

Heat and momentum transfer into surrounding gas

o Kinetic energy and momentum of stopped ions

o Absorbed plasma radiation

Sn flux onto collector

o Diffusion of stopped ions

o Sn vapor

o Sn micro-particles

Sn

Sn

Sn vapor (diffusion debris)

Sn particles

Sn+ Fast Sn ions (line of sight debris)

Main

Pre

Droplets

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3D measurement of fast tin ion distributions Faraday cups measure tin ion distributions

LASER

Ion measurements inform H2 flow requirements for source

Target direction

Laser direction

FC direction

Faraday cup

Red = more Blue = less

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Microparticle debris from plasma Dark-field scattergraph imaging

dropletz (mm)

dropletx (mm

) and/or droplety (2 mm

)

2025

3035

242628303234363840

droplets

MP+PP

0

0.2

0.4

0.6

0.8

1

1.2

Fraction of pulses without microparticle debris

Research 3100

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Plasma-generated self-cleaning

Elemental hydrogen (H*) reacts with tin (Sn) to form Stannane (SnH4) which is gaseous and is pumped out of the vessel. Sn (s) + 4H (g) SnH4 (g)

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Collector Lifetime Continues to Improve >100 Gpulse to 50% EUVR

Collector reflectivity loss over time reduced to <0.4%/Gp

15' Q3 15' Q4 16' Q1 16' Q2 16' Q3 16' Q40

100

200

300

400

500

600

700

800

1st DGen (Field Avg)

2nd DGen (Field Avg)

3rd DGen (Field Avg)

Dro

ple

t G

ene

rato

r R

un

tim

e (

hou

rs)

0

700

1400

2100

2800

3rd DGen (Field Best)

3rd

DG

en

(F

ield

Be

st)

Third generation Droplet Generators: average lifetime increased

from 700hrs in 16Q4 to >800hrs 17Q1

15' Q3 15' Q4 16' Q1 16' Q2 16' Q3 16' Q40

100

200

300

400

500

600

700

800

1st Gen DG (Field Avg)

2nd Gen DG (Field Avg)

3rd Gen DG (Field Avg)

Dro

ple

t G

enera

tor

Runtim

e (

hours

)

0

700

1400

2100

2800

3rd Gen DG (Field Best)

3rd

Gen D

G (

Fie

ld B

est)

2700 hrs droplet

generator runtime

demonstrated in the field

Average lifetime and

maintenance time

improved by factor ~4

3rd generation Droplet generator: long runtime and high reliability Restart capability Factory qualification Tin refill capability

Enhanced particle elimination

15' Q3 15' Q4 16' Q1 16' Q2 16' Q3 16' Q40

2

4

6

8

10

12

14

16

18

20

22

24

26

Avg

Main

ten

an

ce T

ime

/We

ek (

ho

urs

)

>70% reduction in

average

maintenance time

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Slide 50

Feb’17: NXE scanner above 100 wafers per hour NXE:3400B at 148W, 104 WPH

Th

rou

gh

pu

t [W

afe

rs p

er

ho

ur]

NXE:3400B ATP test: 26x33mm2, 96 fields, 20mJ/cm2

110

100

90

80

70

60

50

40

30

20

10

0 2014 Q1

2014 Q2

2014 Q3

2014 Q4

2015 Q3

2015 Q4

2016 Q2

2016 Q4

2017 Q1

NXE:3300B at customers

NXE:3350B ASML factory

NXE:3350B at customers

NXE:3400B ASML factory

Slide 51

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EUV Source Power Outlook

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250W EUV power demonstration with 99.90% fields meeting dose spec

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Collector protection secured up to 250 W Collector protection demonstrated on research tool

0

1

2

3

4

5

6

7

8

9

EU

V a

t IF

(m

J)

Main pulse peak power at plasma (MW)

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Research progress toward 400W EUV source Demonstrated EUV pulse energy of 7.5mJ

Short burst EUV

demonstration

on research

platform

400W research platform

Average of 800

sequential bursts

3400 EUV

source

discussed in this

presentation

375W in-burst at 50kHz Clear path to 400W identified

Slide 56

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Summary: EUV readiness for volume manufacturing 14 NXE:33X0B systems operational at customers

Significant progress in EUV power scaling for HVM

- Dose-controlled power of 250W

- EUV CE of 5.7%

CO2 development supports EUV power scaling

- Clean (spatial and temporal) amplification of short CO2 laser pulse

- High power seed system enables CO2 laser power scaling

Droplet Generator with improved lifetime and reliability

- >700 hour average runtime in the field

- >3X reduction of maintenance time

Path towards 400W EUV demonstrated in research

- CE is up to 6 %

- In-burst EUV power is up to 375W

EUVL 2017

Acknowledgements: Slide 57

Public

Alex Schafgans, Slava Rokitski, Michael Kats, Jayson Stewart

Andrew LaForge, Alex Ershov, Michael Purvis, Yezheng Tao, Mike Vargas, Jonathan Grava

Palash Das, Lukasz Urbanski, Rob Rafac Joshua Lukens, Chirag Rajyaguru

Georgiy Vaschenko, Mathew Abraham, David Brandt, Daniel Brown

Cymer LLC, an ASML company, 17075 Thornmint Ct. San Diego, CA 92127-2413, USA

Mark van de Kerkhof, Jan van Schoot, Rudy Peeters, Leon Levasier, Daniel Smith, Uwe Stamm, Sjoerd Lok, Arthur

Minnaert, Martijn van Noordenburg, Joerg Mallmann, David Ockwell, Henk Meijer, Judon Stoeldraijer, Christian

Wagner, Carmen Zoldesi, Eelco van Setten, Jo Finders, Koen de Peuter, Chris de Ruijter, Milos Popadic, Roger

Huang, Roderik van Es, Marcel Beckers, Niclas Mika, Hans Meiling, Jos Benschop and many others.

ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands

EUVL 2017

Acknowledgements: Slide 58

Public

EUVL 2017