Junji MiyazakiASML Japan

EUVL FEL WorkshopDecember, 2015

EUV Lithography Industrialization and future outlook

Outline

• NXE Roadmap• NXE:33x0B litho performance

and productivity• NXE:3400B• High NA EUV system

Public

12/13/2016Slide 2

Overlay [nm]55 WPH 125 WPH 185 WPH145 WPH

NXE:3300B

NXE:3350B

NXE:next

High NA

12/13/2016

Public

EUV extension roadmap

NXE:3400B2017

2015

2013

Roadmap: October 2016

introduction

products under study

7

3.5

3

<3

<2

Slide 3

EUV reduces multi-pattern process complexity# Process steps per layer

ArFiLE3

ArFiCross-spacer

CMP

Dry Etch

Metrology

Coat/Dev

Deposition

Hard mask

Wet Etch

Lithography

ArFi spacer grating

w/ 2 cuts

EUVsingle

exposure

ArFiLE4

EUVsingle

exposure

LOGIC DRAM

LE3=Litho+Etch+Litho+Etch+Litho+Etch

12/13/2016

PublicSlide 4

7 nm study with leading Logic chip maker projects lower wafer cost for EUV based processes

54x ArF immersion

Design Critical litho

9x EUV+19x ArFi

-12%

Total Wafer Processing Cost

FEOL MOL BEOLCritical

BEOLOther

Base

FEOL MOL BEOLCritical

BEOLOther

Base

Cost per wafer calculated for ASML cost model, all process steps

12/13/2016

PublicSlide 5

Outline

• NXE Roadmap• NXE:33x0B litho performance

and productivity• NXE:3400B• High NA EUV system

Public

12/13/2016Slide 6

Slide 7Public

12/13/2016

0102030405060708090

100

2014Q1

2014Q2

2014Q3

2014Q4

2015Q3

2015Q4

2016Q2

2016Q3

Demonstrated 85 wafers per hour on NXE:3350BAchieved with 125W source configuration Public

Thro

ughp

ut[W

afer

s pe

r hou

r]

• NXE:3350B ATP test: 26x33mm2, 96 fields, 20mJ/cm2

NXE:3300B at customers

NXE:3350BASML factory

NXE:3350Bat customers

12/13/2016Slide 8

Public

7 systems achieved over 80% availability (4 wk average)Consistency to be improved

Graph showing the maximum availability of each system over a 4 week period

12/13/2016Slide 9

Productivity improvement also available to customers3-day average of >1500 WpD achieved on NXE:3350B

12/13/2016

Public

Source: L.J. Chen (TSMC), EUVL Symposium, Hiroshima, Japan (24-26 Oct 2016).

Slide 10

EUV Source - Principle of operation

Source PedestalScanner Pedestal

Fab FloorFab Floor

Sub-fab Floor

Scanner

metrology for source to scanner alignment

CO2 system

Tin catch

Vessel

Vanes

Droplet Generator

Collector

Bea

m

Tran

spor

t

Power Amplifiers PP&MP Seed unit

Inte

rmed

iate

Focu

s U

nit

xz

12/13/2016

PublicSlide 11

Third generation Droplet Generators: average lifetime ~600 hours. Achieved >1000 hrs on multiple systems at multiple customers Public

0

5

10

15

20

25

30

0

200

400

600

800

1000

1200

1400

1600

15' Q3 15' Q4 16' Q1 16' Q2 16' Q3

Average  Maintenance Tim

e/week 

(hrs)

Lifetim

e (hrs)

• Average lifetime and maintenance time improved by factor >3

Type 3:• capability of tin refill and restart• enhanced particle elimination

EUVL 2015

12/13/2016Slide 12

Droplet generator run 1400 hr as of Oct 2016

Public

Typical collector lifetime improved by factor 1.5 in 2016Data from 80W configuration in the field

H1’16H2’16

-0.4%/Gp (EUVL 2016) -0.6%/Gp (SPIE 2016)

0

20

40

60

80

100

0 5 10 15

Refle

ctivity

[%]

0

20

40

60

80

100

0 5 10 15

Refle

ctivity

[%]

-0.1%/Gp

250W configuration (development source)

12/13/2016Slide 13

Outline

• NXE Roadmap• NXE:33x0B litho performance

and productivity• NXE:3400B• High NA EUV system

Public

12/13/2016Slide 14

NXE:3400B illuminator: increased pupil flexibility at full throughput

Field Facet Mirror

Pupil Facet MirrorIntermediate Focus

PublicSlide 15

2D clips: pitch 32nm in x- and y- direction, k1=0.39 Better pattern fidelity with lower Pupil Fill Ratio

Pupil Fill Ratio=40%

SPIE 9776, Jo Finders “Contrast optimization for 0.33NA lithography”Exposures done on a NXE:3350B system. On NXE:3350B, 20% PFR leads to loss of light.

Public

Pupil Fill Ratio=20%

12/13/2016Slide 16

PublicSlide 17

Matched Machine Overlay 1.8nm, meets NXE:3400B specificationNXE:3400B overlay improvements include calibrations and new wafer table

NXE:3400B-like system. Matching to etched reference wafers exposed on immersion

0

20

40

60

80

100

120

140

2014 2015 2016 2017target

2018target

Throug

hput [W

PH]

at 20 mJ/cm

2

Productivity roadmap towards >125 WPH in placeThroughput at targeted availability (>90%) sufficient for HVM insertion Slide 18

Public

Source power increase Source power increase

Transmission improvementFaster

wafer swap

Outline

• NXE Roadmap• NXE:33x0B litho performance

and productivity• NXE:3400B• High NA EUV system

Public

12/13/2016Slide 19

12/13/2016Slide 20

Public

High-NA: large resolution step in line with our historyNew product introductions providing step in resolution λ/NA, um

2005 20151995 201019900.01

0.10

1.00

20202000Year of introduction

i-Line 365 nm

KrF 248 nmKrF 248 nm

ArF 193 nmArF 193 nm

ArFi 193 nmArFi 193 nm

Major technology step (e.g. source, mirror)

EUV 0.33EUV 0.55

EUV 0.25

EUV 13.5 nmEUV 13.5 nm

Engineering optimization of numerical aperture resulting in a resolution step comparable to historical wavelength transitions

12/13/2016Slide 21

Public

Overview main System Changes High-NA tool

Source• Increased power

Lens• NA 0.55, high transmission• Improved Thermal Control

Mask Stage• 4x current acceleration• Same for REMA

Wafer Stage• 2x current acceleration

Illuminator• Improved

transmission

New Frames• Larger to

support Lens

Improved leveling

12/13/2016Slide 22

Public

EUV Optical Train

intermediate focus

collector

Reticle (mask)

wafer

plasma

field facet mirror

pupil facet mirror

W. Kaiser, J. van Schoot, Sematech Workshop on High-NA, 9 July 2013

Key-area where High-NA imposes

large angles

12/13/2016Slide 23

Public

Anamorphic magnification solves the problem at the mask

0%

10%

20%

30%

40%

50%

60%

70%

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Multilayer Reflectivity

 [%]

Angle of incidence on the mask  [deg]

Multilayer

Y0.33NA – Mag 4x

X

Y - 4x

0.55NA – Mag 4x

X

Y - 8x0.55NA – Mag 4x/8x

Multilayer Reflectivity

12/13/2016Slide 24

Public

High-NA >0.5NA 4x/8x anamorphic magnificationChief Ray Angle at Mask can be maintained

pupil

scan

wafer

scan

reticle

scan

• Anamorphic optics half field:8x Magnification in scan4x Magnification in other direction

• Chief ray angle ok Imaging ok

Pupil-in

scan

Pupil-out

The pattern at the mask will be 2x larger

Scanner prints half fields

12/13/2016Slide 25

Public

Anamorphic optics are used in cinematography“Don’t change the mask”

AnamorphicCamera Anamorphic

Projector

“The Mask”(24x36mm2)

16x9

16x9

12/13/2016Slide 26

Public

Imaging verification of the new Half Field conceptLogic N5 clip Metal-1, 11nm lines, SMO is done at 8x

Aerial Image Intensity in Hyperlith

FFQFHF

Note: pictures at same scale, smaller mask reflection is also visible

12/13/2016Slide 27

Public

High-NA Anamorphic Lens prints a half fieldBy utilizing the current 6” mask

Mask

Wafer

Lens

Maskfieldsize

Waferfieldsize

104 mm

132

mm

4x

26 mm

33 m

m

4x Conventional lensFull Field (FF)

HF

26 mm

16.5

mm

NewHalf Field (HF)

QF

104 mm

132

mm

4x/8x

FF

Note: rectangular slit shown for illustration purposes

12/13/2016Slide 28

Public

High-NA anamorphic Half Field conceptFaster stages enable high productivity

Half Field yields 2x more fields• 2x wafer stage acceleration maintains

overhead while going to twice number of scans

Y-magnification 4x 8x• 2x wafer acceleration results in 4x

mask acceleration

Full Fields Half Fields

Acceleration of wafer stage ~2x

Acceleration of mask stage ~4x

High-NA Field and Mask Size productivity500W enables throughput of >150wph with anamorphic HF

High-NA Half Field scanner

needs 500W for

150wph at 60mJ/cm2

Throughp

ut [3

00mm/hr]

Source Power/Dose [W/(mJ/cm2]

Throughput for various source powers and doses

0

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200

0 5 10 15 20 25 30 35

500 Watt60mJ/cm2

500W Watt30mJ/cm2

NXE:3300

WS, RS current performance

WS 2x, RS 4x

HF

High NA anamorphic

FF

12/13/2016Slide 29

Public

12/13/2016Slide 30

Public

High-NA calls for tight focus controlHigh-NA scanner will be introduced in line with focus scaling

focus control budget at introduction

Rayleighk2 = 1

NXE:3300

High-NA

12/13/2016Slide 31

Public

Way forward to 30 nm focus control

3300 performance

Optics improvements

Product wafer flatness

Focu

s C

ontr

ol [n

m]

0

20

40

60

80

100

120

Machine improvements (level sensor, stages, etc.)

Summary12/13/2016

Slide 32

EUV into production in 2018-2019 • More than 1,500 wafers per day (WpD) exposed on a NXE:3350B at a customer site

on average over three days at 85WpH configuration. Roadmap in place to secure >125WpH

• Best performance is four-week average above 90% on a NXE:3300B system• consistency between tools and across sites still needs to be significantly improved• Roadmap to >90% availability, with consistent performance, in place

• ASML expects that customers will take EUV into production in 2018-2019 timeframe

High-NA extends Moore’s Law into the next decade• New anamorphic concept enables good imaging with

existing mask infrastructure resulting in a Half Field image• New stages technologies and high transmission optics enables cost effective litho-

scaling• On going feasibility studies support design targets

Public