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KCUM / Slide 1 <file name> <version 00> <author> EUV Defects – Kevin Cummings ASML - Brian Niekrewicz, Youri van Dommelen, Thomas Laursen, Robert Watso, John Zimmerman, Aiqin Jiang, Bart Kessels, Sander Bouten, Robert Routh SEMATECH - Liping Ren KLA-Tencor - Sumanth Kini, Nithin Yathapu AMTC - Christian Holfeld, Jan Hendrik Peters Toppan Photomasks - Brid Connolly

EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

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Page 1: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 1<file name><version 00><author>

EUV Defects – Kevin Cummings ASML - Brian Niekrewicz, Youri van Dommelen, Thomas Laursen, Robert Watso, John Zimmerman, Aiqin Jiang, Bart Kessels, Sander Bouten, Robert Routh

SEMATECH - Liping Ren

KLA-Tencor - Sumanth Kini, Nithin Yathapu

AMTC - Christian Holfeld, Jan Hendrik Peters

Toppan Photomasks - Brid Connolly

Page 2: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 2

Introduction

PurposeTo get an early understanding of EUVL defectivity

ProcessUtilize the equipment and processes of today to understand the consequences for pilot and production tomorrowBaseline and minimize manual reticle handlingBaseline Alpha Demo Tool (ADT) contributions

NOTE: NXE designs remove ADT limitations

Initial study – reticle particles using wafer inspectionThe “Defect Mask”Results to date

Page 3: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 3

Details of this study

Uncoated quartz substrates are used in baseliningASML Alpha Demo Tool [AD1] is located in the CNSE Albany Nanotech Fab North [NFN]SEMATECH’s Lasertec M1350 is in Nanotech Fab South

53 nm PSL capability

Minimized particles from manual reticle handling with optimized procedures “Partitioned” particle tests run to determine and minimize contributions from AD1Continuing to lower these background particles to enable further studies of EUV defectivity

Page 4: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 4

Partition test Manual transfer from Lasertec to internal position within AD1

0

5

10

15

20

25

Transferto load

lock

Transferto elevator

Transferto robot

Transferto dock

Transferto clamp

Transferto

exposure(no light)

Part

icle

s

1 exchange10 exchanges 25 exchanges

40 exchanges

10

1

5 55 4 4

15 15

21

Particle size >53nmTo

tal P

artic

le c

ount

Page 5: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 5

Inspection results show that added particles are concentrated in the corners

40 cycles21 particles (bin 4+ is > 53nm)0.525 particles per passPrint area 102 x 132 mm

Quality area 142 x 142 mm

No particles appearin print area

Page 6: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 6

0

5

10

15

20

25

Transferto load

lock

Transferto elevator

Transferto robot

Transferto dock

Transferto clamp

Transferto

exposure(no light)

Part

icle

s

1 exchange25 exchanges

40 exchanges

10

1

0

3 2

0

Particle size >53nm

<0.031 particles / exchange

Background contribution acceptable for testing

Tota

l Par

ticle

cou

nt

Partition test Manual transfer from Lasertec to internal position within AD1

Print area only

Page 7: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 7

45nm grating H/V

45nm grating H/V

45nm grating H/V

38nm grating H/V

38nm grating H/V

38nm grating H/V

32nm grating H/V

32nm grating H/V

32nm grating H/V

Initial study – The Defect Mask

Pos defects Neg defects

BridgesGaps

Optimize inspectionon program defects

Resistimages

Reticleimages

Page 8: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 8

Optimization sequence for KLA 2800*

Identify programmed defects for S/N

optimization

Optimize S/N for programmed defects of

interest

10x run on all programmed defects

and determine capture rate

Check nuisance level, acceptable y/n

Investigated High throughput, High sensitivity, GHI-Line, Blueband DUV & Broadband DUV

High Sensitivity Blueband DUV & Broadband DUV gave best signal to noise* Note: 2800 wafer inspector spec’d for 65nm node. Results from current-gen tool may differ

Page 9: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 9

Capture rate on programmed defects

• Measure 5 fields on KLA2800, repeat 10x• 4 sets of programmed defects per field (bridge, gap, neg & pos defect)

• Each repeater should show up 10x, if capture rate = 100%

Example for 45nm features

1 2

34

5

Page 10: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 10

0.010.020.030.040.050.060.070.080.090.0

100.0

avg

capt

ure

rate

[%]

Max capt rate [%]

Min capt rate [%]

AVG capt rate [%]

Capture rate on programmed defects, 32nm features Bridges, avg capture rate (5 flds, 10rpts/fld)

Page 11: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 11

0

10

20

30

40

50

60

70

80

90

100

avg

capt

ure

rate

[%] Max c apt rate [% ]

Min c apt rate [% ]

A V G c apt rate [% ]

Capture rate on programmed defects, 32nm features Neg. defects, avg capture rate (5 flds, 10rpts/fld)

Page 12: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 12

Capture rate not related to feature size Only plotting capture rates < 100% Positive defects, avg capture rate (5 flds, 10rpts/fld)

45nm feature 38nm feature 32nm feature

0

10

20

30

40

50

60

70

80

90

100

avg

capt

ure

rate

[%]

Max capt rate [% ]

Min capt rate [% ]

A V G capt rate [% ]

45nm feature 38nm feature

Page 13: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 13

Capture rate not related to feature size Only plotting capture rates < 100% Neg. defects, avg capture rate (5 flds, 10rpts/fld)

0102030405060708090

100

avg

capt

ure

rate

[%]

Ma x ca p t ra te [% ]

Min ca p t ra te [% ]

AVG ca p t ra te [% ]

45nm feature 32nm feature

32nm feature 32nm feature

32nm feature

32nm feature

38nm feature

38nm feature

38nm feature

38nm feature

38nm feature

45nm feature

38nm feature

Page 14: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 14

1st defect data measured – no optimization or tweaking

Random defects from 23 fields exposed on EUV AD1 and measured on KLA2800Remove reticle and programmed defectsSEM review

Random defects - raw data

Count : 3134

Page 15: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 15

Defect pareto Random defects

NV = 27%

0

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25

30

35

40

45

50

PartialBridge

FullBridge

PartialBridgeEOL

FullBridgeEOL

Particle Other Open NotV isual

Part

icle

s

1 field 100% review

Page 16: EUV Defects – Kevin Cummingseuvlsymposium.lbl.gov/pdf/2009/pres/O_M2RI2-04... · Pos defects. Neg defects. Bridges. Gaps. Optimize inspection. on program defects. Resist. images

KCUM/ Slide 16

Summary Manual transfer of reticles is possible at rates as low as 0.03 particles (per reticle exchange/exposure)

Allows meaningful defect work using today’s limitationsWork continues to reduce particle number further

Printed capture rate vs defect size is different for feature typesCannot “simply” state capture rate vs defect sizeHere capture rate seems to be independent of feature size

Caveat: - KLA2800 is spec’d for 65nm node. Future studies using current-generation wafer inspector may reveal different trends

Determining reticle defects from wafers is complexIndustry coordination/cooperation would be beneficial

Initial random defect data set shows = ~14 defects /cm2

First look and “as is” – no optimizationsMajority of these defects are bridgesNuisance level 27%

Continuing reticle-wafer defect printability studies