KIT – The Research University in the Helmholtz Association

Institute of Electrical Engineering (ETI)

Power Electronic Systems

Kaiserstr. 12 Bldg. 11.10

76131 Karlsruhe, Germany

www.eti.kit.edu

ETI Double Pulse test bench for measurement and

qualification of power semiconductorsM.Sc. Fabian Stamer, M.Sc. Rüdiger Schwendemann, Prof. Dr.-Ing. Marc Hiller

contact person: Fabian Stamer - fabian.stamer@kit.edu

A

B

C

D

Double Pulse Test Operating Principle

Single phase module setup,

testing the IGBT T2

Characteristic waveforms of the

double pulse test

Control (Gate) Signal green

Measuring turn ON and OFF

behavior at the second pulse

Measuring at the same time

two different operating points

Loss Calculation and Definition

Typical switching characteristics of an IGBTCalculation of switching

energies

Used integration limits

Fully automated switchable choke

Configurable choke with seven different effective inductances

Selection of desired inductivity via thyristors

ensuring safe operation

Fully automated test bench (LabVIEW and ETI DSP-System based)

Max. DC-Link voltage: 𝑽𝐦𝐚𝐱 = 𝟏, 𝟖 𝐤𝐕

Maximal current pulse: 𝑰𝐦𝐚𝐱 = 𝟒 𝐤𝐀

Maximal measurable current slope: Τ𝑑𝑖𝑑𝑡 = 6

kA

μs

Adjustable junction temperature: −20 °C < 𝑇J < +160 °C

Measurement of conduction characteristics

Measurement of switching behavior

Evaluation of the measured data with Matlab and LabVIEW

Novel Developed Fully Automated Test Bench

𝐸ON = නt1

t2

𝑣CE(𝑡) ∙ 𝑖C 𝑡 𝑑𝑡

𝐸O𝐹𝐹 = නt3

t4

𝑣CE(𝑡) ∙ 𝑖C 𝑡 𝑑𝑡

𝐸rr = නt5

t6

𝑖rr(𝑡) ∙ 𝑣D 𝑡 𝑑𝑡

𝑖rr 𝑡 = 𝑖C(𝑡) - 𝐼C,nominal 𝑡6: 𝑖D(𝑡) = 0.02 ∙ 𝐼rr

𝑡5: 𝑖C(𝑡) = 𝐼C,nominal

𝑡4: 𝑖C(𝑡) =0.02 ∙ 𝐼C,nominal

𝑡3: 𝑣GE(𝑡) = 0.9 ∙ 𝑉GE,on,static

𝑡2: 𝑣CE(𝑡) = 0.02 ∙ 𝑉DC−Link

𝑡1: 𝑣GE(𝑡) = 0.1 ∙ 𝑉GE,on,static