Entwicklung einer Hochleistungsmikrowellenplasmaquelle und

1

www.kit.edu

Entwicklung einer Hochleistungsmikrowellenplasmaquelle und Integration derselben in eine industrielle Beschichtungsanlage

S. Ulrich, J. Ye, S. Schweiger, M. Stüber, H. Leiste

Institute for Applied Materials (IAM-AWP), Department of Composites and Thin Films

19. März 2015 , BÜHLER Alzenau GmbH, 63755 Alzenau

outline

• introduction & motivation

• experimental details

• selected results

• summary and outlook

AG »Neuartige Plasmaquellen und -prozesse« 19. März 2015 BÜHLER Alzenau GmbH, 63755 Alzenau

CORE Metadata, citation and similar papers at core.ac.uk

Provided by KITopen

https://core.ac.uk/display/197582484?utm_source=pdf&utm_medium=banner&utm_campaign=pdf-decoration-v1

2





High performance plasma sources can be used for:

Introduction & motivation

- High-rate Ar ion etching

- The addition of nitrogen, carbon or oxygen ions and radicals

- Plasma nitriding or plasma oxidation

- High rate deposition of a-C:H and ta-C:H

- Developing PVD/PECVD hybrid processes

- High rate deposition of carbon-based low friction nanocomposites

3

Modified a-C:H coatings produced by a PECVD/PVD hybrid process

Introduction & motivation

0

5

10

15

20

25

30

35

-500-400-300-200-1000

HF-Substratvorspannung in V

Här

te in

GP

a

a-C:Ha-C:H(Si)a-C:H(Ti)a-C:H(B)

relaxation

r.f.-substrate bias in V

hard

ness

in G

Pa

- Independent particle fluxes forming a-C:H and adding Si, Ti or B

S. Ulrich, H. Holleck, H. Leiste, L. Niederberger,E. Nold, K. Sell, M. Stüber, J. Ye, C. Ziebert, P. Pesch, S. Sattel, Nano-scale, multi-functionalcoatings in the material system B-C-N-H, Surf. Coat. Technol. 200 1-4 (2005) 7-13

magnetronsputtersource

plasmasource

substrate





4

Experimental details


5



6



7

Experimental details: modelling tools

COMSOL

RF ModuleSoftware for Microwave and RF Design

Modeling a Dipole Antenna Parabolic Reflector Antenna

https://www.comsol.pt/


COMSOL

Plasma ModuleSoftware for Modeling Low-Temperature, Non-Equilibrium Discharges

In-Plane Microwave Plasmahttps://www.comsol.pt/

8


COMSOL

Particle Tracing ModuleSoftware for Studying the Interaction between Particles and Fields

Particles are injected from a system of injection nozzles into a CVD chamber with a cone angle of 15 degrees. Initially they have enough inertia to follow their original trajectory but ultimately the drag force takes over and the particles begin to follow the background gas out of the exhaust port.

https://www.comsol.pt/


CST STUDIO SUITE

https://www.cst.com/Products/CSTS2

Cross section of a microwave plasma source

9





Selected results: variation of C2H2 flow rate

grow

th r

ate

in µ

m/h

C2H2 flow rate in sccm

330 sccm Arsingle plasma source: 1200 W

250 sccm Ar, full load2 plasma sources: 2 x 1200 W

10

Selected results: thickness profile using 1 source

30 min deposition duration

Selected results: homogenity

11

Selected results: homogenity

grow

th r

ate

in µ

m/h

P2 P4P3

substrate position

homogenity single source operation: R(P4) = 50% R(P2)homogenity 2 sources operation: R(P4) = 66% R(P2)

Selected results: residual stress

negative d.c. substrate bias in V

com

pres

sive

str

ess

in G

Pa

300 sccm Ar + 300 sccm C2H2

2 plasma sources: 2 x 1200 W, 100°C

hardness:2250 HV

12

Selected results: high growth rate

‐Deposition with single plasma source

(new BN-part attached on antenna): 1 x 1.4kW

‐Gas: 500 sccm C2H2 + 15 sccm Ar

‐Pressure: (a) before deposition 1.2 x 10-2 mbar,

(b) during deposition (plasma on) 5.4 x 10-3 mbar

‐Without substrate bias, no substrate rotation during deposition

‐Distance between substrate and plasma-source: ca. 20 cm

‐Deposition time: 28 min

‐Film thickness: 16.7 µm

‐Chamber temperature: 47°C in the end of deposition

‐Muegge 3-stub tuner: no need for adjustment during deposition,

power refection kept at 0 - 2%.

Tuner temperature 32°C in the end of deposition

‐Deposition rate: 35.8 µm/h

Selected results: plasma diagnostics

400 600 800 1000 1200200

400

600

800

1000

1200

ion

sa

tura

tio

n c

urr

en

t d

en

sit

y (A

/cm

2)

power on each source (W)

source 1 + 21.0 Pa, 700 sccm Ar

13


400 600 800 1000 1200200

300

400

500

600

700

800

900

1000

ion

sa

tura

tio

n c

urr

en

t d

en

sit

y (A

/cm

2)

power on top source (W)

top source: onbottom source: off700 sccm Ar, 1.0 Pa


400 600 800 1000 1200

50

100

150

200

250

300

ion

sa

tura

tio

n c

urr

en

t d

en

sit

y (A

/cm

2)

power on bottom source (W)

top source: offbottom source: on700 sccm Ar, 1.0 Pa

14


400 600 800 1000 1200

450

500

550

600

650

700

750

800

ion

sat

ura

tio

n c

urr

ent

den

sity

(A

/cm

2 )

power on each source (W)

source 1+2200 sccm Ar 200 sccm N

2

0.57 Pa


100 200 300 400 500 6001

2

3

4

5

6

7

source 1+22 x 1000W200 sccm N

2pla

sma

po

ten

tial

(eV

)

argon flow rate (sccm)

15

Application: low ion energy incombination with high ion current densities

A. Anders, Thin Solid Film (2009)





16

Summary

- successful integration of 2 plasma sources in Hauzer coating facility

‐ commerial available Hauzer facility: 1200 W, 100% C2H2, 700 sccm C2H2, 36 µm/h, 6 µm/h with 2-fold rotation

- stable operation (in time, variation of load, ...)

- hardness (300 sccm Ar, 40 sccm C2H2, -80 V substrate bias) = 2600 HV

- operation with 100% C2H2 possible

Outlook

- future development of an oblong plasma source

- low plasma potential between 2 eV and 10 eV

- ion current densities of 1 mA/cm2 at large distances

Thank you very much for your attention!

Many thanks …

… to my co-workers J. Ye, S. Schweiger, M. Stüber and H. Leiste

… to our distribution partners

Distribution partners:

… Dr. Cord, Singulus Technologies AG, and the whole inplas team for the invitation

Documents

Entwicklung einer Hochleistungsmikrowellenplasmaquelle und