Energy, Inverters and Metering · communication and control peripherals NXP Semiconductors has introduced a new Wafer-Level Chip-Scale Package (WLCSP) for its LPC1768 MCUs. Measuring

Component Focus: pages 2-14 Cypress PSoC® 4000 combines ARM® Cortex®

efficiency with programmable-SoC flexibility

Design Notes: pages 15-17 Using the latest magnetic sensors for non-contactAC or DC current measurements

Application Spotlight: pages 18-25 Silicon-carbide innovation by ROHM Semiconductorand STMicroelectronics, for more efficient converters

Technical View: pages 26-27 New solar policies end feed-in frenzy, encourageadvances in battery technology

Application Spotlight on

Energy, Invertersand Metering

S T A R P R O D U C T

2 EMAIL [email protected] FOR SAMPLES AND DATASHEETS

Combining 32-bit ARM performance with PSoCflexibility in a cost-optimised, entry-level PSoC 4device, PSoC 4000 provides up to 16kbyte ofon-chip Flash and 2kbyte of SRAM as well asprogrammable analogue features including 7-bitand 8-bit DACs, a digitally-controlled currentsource and one comparator. Programmabledigital peripherals are also available, including aconfigurable 16-bit timer, counter/PWM block,and an I2C master/slave. Capacitive touchsensing can be implemented quickly usingCapSense. CapSense is implemented using theintegrated Cypress Capacitive Sigma-Delta™ (CSD)controller and features SmartSense™ auto-tuningto eliminate any need to tune the applicationmanually. Capacitive sensing is supported onup to 16 pins of the PSoC 4000 device.

Support for development with the PSoC4000 includes the PSoC Creator™ IntegratedDesign Environment as well as the CY8CKIT-040 evaluation kit. This kit provides all thehardware needed to get the application up andrunning including headers enabling designers tofit shields such as the trackpad shield whichsupports CapSense functionality.

The PSoC Creator 3.0 SP1 IDE now supportsPSoC 4000 devices, and streamlines systemdesign by dragging and dropping analogue ordigital PSoC Components into the schematic.

These virtual chips are then configured usingthe component customiser to suit theapplication requirements. Over 120 pre-verified,production-ready PSoC components areavailable, including basic functions such as I2C,USB, UART, and SPI. Each component includesa full set of dynamically generated API libraries.Once the PSoC system has been configured,firmware can be written, compiled, anddebugged within PSoC Creator or exported toa third-party IDE. If necessary the design canbe migrated to a more feature-rich PSoC deviceusing PSoC Creator, without having to re-writecode or select new components.

The CY8CKIT-040 development kit supportsan open platform, enabling complete access tothe PSoC 4000 device via onboard headersthat support the Arduino™ hardware community.The kit contains the CY8CKIT-040 PSoC 4000Pioneer board and the Trackpad shield, as wellas all necessary jumper wires, a USB cable andthe Quick Start Guide.

The simple design flow, powerful tools andreadily available evaluation hardware ensure afaster project start and help to speed-upcompletion resulting in faster time to market.

Fast-track microcontroller upgrades withPSoC 4000 featuring ARM Cortex-M0

CYPRESS SEMICONDUCTOR

APPLICATIONS• Industrial sense and control• Networking devices• Internet-of-Things (IoT) applications• Domestic appliances

FEATURES• Scalable PSoC architecture• ARM-friendly ecosystem• Latest PSoC Creator 3.0 SP1 software• PSoC 4000 package options:

8-pin SOIC, 16-pin SOIC 16-pin QFN, 24-pin QFN

SECURITYAUTOMOTIVEMEDICALLIGHTINGINDUSTRIALENERGY CONSUMER TELECOMMS

STARPRODUCT

New Microchip memory keeps up withDDR4 standardMicrochip has introduced a new 4kbit I2CSerial-Presence Detect (SPD) EEPROM. Thisdevice, the 34AA04, is aimed at price-competitive markets and is specifically designedto work with the next generation of DoubleData-Rate 4 (DDR4) SDRAM modules whilealso supporting older DDR2/3 platforms.

The 34AA04 is capable of operation from1.7V to 3.6V, and is compliant with JEDECJC42.4 (EE1004-v) Serial Presence Detect(SPD). The device includes reversible softwarewrite protection for each of four independent128 x 8-bit blocks, and supports a newSMBus-compatible bus time-out. Threeaddress pins allow up to eight devices on thesame bus.

Vishay sets MOSFET efficiencybenchmark at 150VVishay Siliconix has revealed the industry’s first150V N-channel MOSFET in the compact,thermally-enhanced PowerPAK SC-70 package.Offering the industry’s lowest on-resistance inthe 2mm x 2mm footprint, at VGS of 10V, theVishay SiA446DJ helps to increase efficiency ina wide range of space-constrained applicationsby reducing conduction and switching losses.

At 10V, the on-resistance is 53% lower thanthe previous-generation device in the TSOP-6package, while its typical on-resistance x gate-charge Figure Of Merit (FOM) at 10V is 54%lower for improved efficiency. The SiA446DJ alsohas 26% lower on-resistance than the latestcompeting device in the 3mm x 2.7mm SOT-23 package.

Murata’s miniaturisation breakthroughMurata believes it has produced the world’ssmallest combined proximity and illuminancesensor, measuring just 3.05mm x 2.10mm x1.10mm. The surface-mount LT-1PA01integrates both an optical proximity sensor andan illuminance sensor. The proximity sensoruses a photoreceptor to measure the distanceto an object based on the amount of returnedlight. Another photoreceptor is used to detectthe amount of ambient brightness. Typicalapplications are to darken an LCD screenwhen not needed, or to increase the brightnessof the screen’s backlight when used outdoor.

Microchip unveils tiny, integratedmotor controllerMicrochip has introduced the MCP8063 highlyintegrated, cost-effective, automotive AEC-Q100qualified motor driver that delivers superiorperformance in a small, 8-pin, 4mm x 4mmDFN package. This is the first device in theworld to combine all these features with 1.5Apeak phase current for the 180° sinusoidaldrive of a variety of three-phase brushless DCmotor and fan applications.

This integration reduces cost and PCB area,and the high sinusoidal-drive performanceprovides high efficiency, low acoustic noise andlow mechanical vibration for energy savingsand quiet operation.

©Copyright 2014 Future Electronics Ltd. All trademarks contained herein are theproperty of their respective owners. Applications for product samples, badgeboards, demonstration boards, Future Electronics’ boards and other advertisedmaterials from Future Electronics are offered subject to qualification.

N E W S I N B R I E F

For more information [email protected]:

For samples or pricing [email protected]:

Cypress Semiconductor PSoC 4000 designEvaluation kit for Cypress PSoC 4000 programmablesystem-on-chip devices, including Trackapd shield forCapSense® capacitive touch sensing. Orderable Part Number: CY8CKIT-040

FREEBOARDS

Apply now at my-boardclub.comFast-track board request code: FTM46A

PSoC Creator enables graphical configuration of the system andcomponents

CY8CKIT-040 PSoC 4000Pioneer board

When a legacy 8-bit or 16-bit MCUneeds to be upgraded, a fast andeffective solution is Cypress’s PSoC®

4000 featuring the 32-bit ARM®

Cortex®-M0 core combined with value-added features such as CapSense® andprogrammable peripherals.

C O M P O N E N T F O C U S

STM32 MCUs target cost-consciousmixed-signal control applications

STMicroelectronics’ STM32 F3 seriesMCUs deliver advanced analoguecapabilities at a competitive price,combining the 72MHz ARM® Cortex®-M4Fcore featuring DSP co-processor andFloating-Point Unit (FPU) with peripheralsoptimised for efficient handling andprocessing of mixed signals.

The STM32 F3 series includes the STM32F302and STM32F303, which have up to 512kbyteof programme and data Flash, as well as theSTM32F373 with up to 256kbyte Flash andenhanced features for precision measurementapplications.

The STM32F302 has two 5Msample/s 12-bitADCs, four comparators, two operationalamplifiers, one DAC channel, a low-power Real-Time Clock (RTC), up to five general-purpose16-bit timers, one general-purpose 32-bit timer,and one timer dedicated to motor control.

The STM32F303 provides additional analogueand signal-conditioning resources, with up to

four 5Msample/s12-bit ADCs, sevencomparators, fouroperationalamplifiers, and upto two DACchannels. Both theSTM32F302 andSTM32F303 featuretwo standard I2S

interfaces that can operate as master or slaveand support both half-duplex and full-duplexcommunication modes.

The STM32F373 has three 16-bit sigma-delta ADCs and one 12-bit Successive-Approximation Register (SAR) ADC, twocomparators, and two DACs offering a total ofthree channels. Three standard I2S interfacesare multiplexed with the three SPI ports, SPI1,SPI2 and SPI3, and can be operated as masteror slave in half-duplex mode only.

Each series offers a choice of temperatureranges, from -40°C to 85°C or -40° to 105°C,and is designed to operate from a 2.0V to 3.6Vpower supply. These STM32 F3 devices offereasy scalability to the pin- and software-compatible STM32 F4 family, which featuresthe higher-performing 168MHz ARM Cortex-M4F core.

New WLCSP option for ARM Cortex-M3 MCUs with integratedcommunication and control peripherals

NXP Semiconductors has introduced anew Wafer-Level Chip-Scale Package(WLCSP) for its LPC1768 MCUs.Measuring just 5.074mm x 5.074mm x0.6mm the WLSCP100 packageintegrates a high-speed ARM®

Cortex®-M3 core with 512kbyte ofFlash and 64kbyte of SRAM for datamemory, in addition to peripherals forcommunication and controlapplications, including metering.

feature a Power-Management Unit (PMU) thatautomatically adjusts the MCU’s internalregulators to minimise the energy consumed inreduced-power modes.

STMICROELECTRONICS

NXP SEMICONDUCTORS

APPLICATIONS• High-performance motor controls• Biometric sensing• Industrial sense and control• Embedded digital audio

FEATURES• Integrated temperature sensor• Up to 24 capacitive-sensing channels• Multiple multi-channel timers including

basic timers and SysTick timer• Mappable fast I/Os with selected

5V-tolerant pins• Low-power modes, and VBAT supply for

RTC and backup registers


APPLICATIONS• eMetering• Alarm systems• Lighting• White goods• Industrial networking• Motor control

FEATURES• 100-pin LQFP, TFBGA and WLCSP

package options• RTC with a separate power domain and

dedicated RTC oscillator• ARM Cortex-M3 system-tick timer• Watchdog timer, brown-out detect, and

power-on reset• Unique device serial number for

identification purposes




Mixed-signal controlNucleo development board for STM32 F3 series,featuring STM32F302R8T6 MCU with 64kbyte Flashmemory in TQFP64 package. Orderable Part Number: NUCLEO-F302R8

FREEBOARDS


3VISIT THE ONLINE FTM MAGAZINE AT: WWW.MY-FTM.COM

The LPC1768/67/66/65/64/63 operate at CPUfrequencies of up to 100MHz. TheLPC1769 operates at CPUfrequencies of up to 120MHz.When selecting LPC176x variants,designers can choose from a broadselection of optional serialinterfaces, including Ethernet MACwith RMII interface and dedicatedDMA controller, a USB2.0 full-speeddevice/Host/OTG controller withdedicated DMA controller and on-chip PHY fordevice, Host, and OTG functions, four UARTs,

a 2-channel CAN2.0B controller, an SPIcontroller, two Synchronous Serial Port (SSP)controllers, three I2C interfaces, and an I2Sdigital-audio interface.

In addition, up to 70 general-purpose I/Opins are available, as well as a 12-bit ADCsupporting conversion rates up to 200kHz, a10-bit DAC with dedicated conversion timerand DMA support, and four general-purposetimer/counters that provide the flexibility toselect specific timer events to generate DMArequests.

Among other control-oriented peripheralsare one motor-control PWM with support forthree-phase motor control, a quadrature-encoder interface capable of monitoring one

external quadrature encoder, andone standard PWM/timer

block with external countinput.

The MCUs operatefrom a single powersupply of 2.4V to 3.6V,

and offer four reduced-powermodes comprising sleep,

deep-sleep, power-down, anddeep power-down, as well as flexible

wake-up options triggered from a variety ofinterrupts. Helping to maximise the energysavings that can be achieved, the devices



AC-DC modules deliver efficientpower where board space is tight

Modules are available in 1W, 2W and 3W power ratings

The VSK-S1, VSK-S2 and VSK-S3 seriesof AC-DC isolated power modules byCUI Inc., have output power of 1W, 2Wand 3W respectively, and are designed incompact board-mount packages totarget space-constrained applications.

The modules have a universal AC input-voltage range of 85V AC to 305V AC andisolation voltage of 3kV, making them suitablefor use in lighting controls and smart-buildingsystems. Operating at up to 78% efficiency,and with industry-leading no-load powerconsumption of 100mW, the modules are alsoideal for primary or auxiliary power conversionin telecom and networking equipment,consumer products, and industrial controlapplications. The power supplies feature verylow ripple and noise, and operate over thetemperature range of -25°C to 70°C. Foradded protection in environments that mayexperience exposure to moisture, dust anddirt, or heavy shock and vibration, the VSK

modules are potted and packaged in a ruggedencapsulated case.

Modules are available with a single fixedoutput voltage of 3.3V, 5V, 9V, 12V, 15V or 24V.All models carry CE and UL/cUL 60950-1safety certifications, and are compliant with theEN 55022 Class B EMI standard.

CUI INC

APPLICATIONS• Lighting controllers and ballasts• Smart-building applications• Telecom and networking equipment• Industrial controls• Consumer products

FEATURES• Rugged encapsulated case

• 33.7mm x 22.2mm x 18mm (VSK-S1 and VSK-S2 series)

• 37.08mm x 23.11mm x 14.99mm (VSK-S3 series)

• Over-voltage protection• Short-circuit protection• Over-temperature protection


Isolated high-side driver simplifiessafe-system design

The STMicroelectronics ISO8200B is an8-channel galvanically isolated high-sidedriver with a power stage having verylow RDS(ON) of 120mΩ per channel.Thanks to the low supply current, itminimises power consumption anddissipation, has advanced protectionfeatures built in, and benefits fromindependent over-temperature protectionon each channel.

The ISO8200B is intended to drive any kind ofload with one side connected to ground. Itfeatures a pure RF link enabling communicationthrough the isolation layer, which providessuperior noise immunity, minimises EMI andhelps to achieve lower power consumptionthan traditional optocoupler-based systems.The integrated protection features includeloss-of-ground protection, under-voltageshutdown with hysteresis, and a reset functionfor immediate power-output shutdown.

The digital stage and power stage haveseparate galvanically isolated voltage domains,

and the outputstage is capableof supplying upto 0.7A perchannel. Eachoutput channelis equipped withactive current-limitation circuitrycombined with thermal shutdown andautomatic restart. These mechanisms protectthe device against overload and short-circuit.In overload conditions, if the junctiontemperature exceeds the shutdown-thresholdvalue of 170°C, the channel involved is turnedoff until the IC temperature decreases belowthe reset threshold of 150°C. The channel isthen turned on again automatically.

If the case temperature exceeds itsthreshold of 130°C, the overloaded channel isturned off and only restarts when case andjunction temperatures decrease below thereset thresholds of 110°C and 150°Crespectively. Non-overloaded channelscontinue operating normally. A commonOutput-enable pin is provided, which allows alloutputs to be enabled or disabledsimultaneously.

RF isolation ensures superior noiseimmunity

STMICROELECTRONICS

APPLICATIONS• Programmable Logic Controllers (PLCs)• Industrial-PC peripheral input/output• Numerical-control machines• Drivers for all types of resistive, capacitive

or inductive loads

FEATURES• 120mΩ RDS(ON) with current up to 0.7A• Direct and synchronous control mode• High common-mode transient immunity• 5V and 3.3V TTL/CMOS-compatible I/Os• Fast demagnetisation of inductive loads• ESD protection




Advanced isolated high-side switchingEvaluation board for STMicroelectronics ISO8200B 8-channel high-side driver, to be used with STEVAL-PCC009V2 or STEVAL-PCC009V1 interface board. Orderable Part Number: STEVAL-IFP015V2

FREEBOARDS


Part Number Power OutputVoltage

OutputCurrent

VSK-S1-3R3U

1W

3V 0.3AVSK-S1-5U 5V 0.2AVSK-S1-9U 9V 0.11AVSK-S1-12U 12V 0.083AVSK-S1-15U 15V 0.067AVSK-S1-24U 24V 0.042AVSK-S2-3R3U

2W

3.3V 0.6AVSK-S2-5U 5V 0.4AVSK-S2-9U 9V 0.22AVSK-S2-12U 12V 0.167AVSK-S2-15U 15V 0.133AVSK-S2-24U 24V 0.083AVSK-S3-3R3U 2.3W 3.3V 0.7AVSK-S3-5U

3W

5V 0.6AVSK-S3-9U 9V 0.33AVSK-S3-12U 12V 0.25AVSK-S3-15U 15V 0.2AVSK-S3-24U 24V 0.125A



8-bit microcontrollers target timing and controlapplications through high-performance peripherals

Microchip PIC12F1571 and PIC12F15728-bit PIC® microcontrollers provide threefull-featured 16-bit PWM generators withindependent timers for applicationsrequiring high resolution, combined withrich analogue peripherals, 8-bit and 16-bittimers, and a Complementary-WaveformGenerator (CWG).

In addition to supporting standard and centre-aligned PWM output modes, the integratedPWM module also has four compare modesand can serve as an additional16-bit timer. The CWG is able togenerate complementarywaveforms with fine control ofkey parameters such as polarity,dead band and emergencyshutdown states, and can beused with the 16-bit PWMs tocreate half-bridge and full-bridgedrive control. This provides acost-effective solution, savingboth board space andcomponent cost when drivingMOSFETs in motor-control andpower-conversion applications.

In combination with analogueperipherals such as the 10-bitADCs, comparator and 5-bit

DAC, the PWM module and CWG can beused to implement closed-loop feedback andcontrol.

The PIC12F1572 is the lowest-priced PICmicrocontroller to integrate an EUSART, whichcan be used to support general-purpose serialcommunication, or LIN-based communicationin automotive or industrial applications. Theintegrated 10-bit ADCs can support human-interface or touch-sensing applications usingMicrochip’s mTouch™ capacitive-sensingtechnology.

PIC12LF1571 and PIC12LF1572 variants arealso available, delivering the added benefit oflow power consumption. These devicesoperate from a 1.8V to 3.6V supply and drawactive current of less than 35µA/MHz and sleepcurrent down to 20nA.

Compact low-VF rectifier diodestarget space-constrained and power-sensitive applications

NXP Semiconductors’ PMEG2002ESFlow-VF MEGA Schottky barrier rectifierhas typical forward voltage (VF) of just310mV and is housed in a 0.3mm-highDSN0603-2 (SOD962-2) leadless ultra-small surface-mount plastic package.

The combination of space-saving package andlow electrical losses deliver a compact andenergy-efficient solution for use in battery-powered devices and space-constrained DC-DC converters, power supplies andrectifier circuits.

The PMEG2002ESF has maximum reversevoltage of 20V and maximum average forwardcurrent of 0.2A, with typical reverse current of0.37µA to ensure efficient blockingperformance.

Avoid wasted energy and board space with NXP's MEGA Schottkydiodes

MICROCHIP

NXP SEMICONDUCTORS

APPLICATIONS• LED lighting• Stepper-motor control• Battery chargers• RGB-LED colour mixing• Automotive interior LED lighting

FEATURES• High-endurance Flash memory:

100,000 writes minimum• Internal clock speeds from 31kHz to

32MHz• Built-in system-protection functions• UART for digital communications• Economical 8-pin package


APPLICATIONS• Energy-conscious applications• Low-voltage rectification• High-efficiency DC-DC converters• Switched-mode power supply• Ultra high-speed switching• Mobile LED backlights

FEATURES• 0.2A maximum average forward current • 20V maximum reverse voltage• 310mV typical forward voltage• 0.88µA typical reverse current


Microchip's latest 8-bit devices combine affordability with high performance


IR’s IRL6283M: page 6Vishay’s IHLP-2525CZ-8A: page 12Vishay’s VS-xEJH0xxM3: page 12

PARTNERWORKING

Microcontroller development8-bit Low-Pin-Count Development Kit for MicrochipPIC12(L)F157x PIC® microcontrollers. Orderable Part Number: DM164130-9

FREEBOARDS





RFID/NFC-tag IC adds I2C hostinterface for extra flexibility

The STMicroelectronics M24SR64-Ydynamic NFC/RFID tag provides bothRF and I2C interfaces to the integrated64kbit EEPROM, allowing access usinga wireless reader such as a13.56MHz RFID reader or NFCphone, or via a wiredconnection to the host system.

The wireless reader and I2C host areable to read or write to the samememory, and only one cancommunicate with the tag at anyone time. The M24SR64-Ymanages the selection of therequired interface independently.

The RF interface conforms to theISO/IEC 14443 Type A standard.The M24SR64-Y is compatible withthe NFC Forum Type-4 Tagspecifications and supports allcorresponding commands.

STMICROELECTRONICS

APPLICATIONS• RFID tags for:

• Supply-chain management• Asset tracking• Retail security• Manufacturing-traceability systems

FEATURES• 2.7V to5.5V supply voltage for I2C

interface• 106kbit/s maximum RF data rate• EEPROM supports NFC Data-Exchange

Format (NDEF) data structure• Configurable GPIOs• RF-disable capability


Advanced MOSFETs with ultra-low on-resistance boost power-switching efficiency

International Rectifier has added 20V,25V and 30V devices to its StrongIRFET™

family, offering ultra-low on-resistanceto satisfy market demands for efficientswitches for active ORing andelectronic fuse (eFuse) applications.

Typical of the new devices, the IRL6283M is a20V DirectFET® with on-resistance of only500µΩ, which minimises conduction losses.The IRL6283M can be connected to a 3.3V,

5V or 12V rail. Offering 15% lower losses at20A than the best alternative PQFN devices inthe same 30mm2 form factor, it enablesdesigners to reduce part count in high-currentapplications.

The low-profile DirectFET package of theIRL6283M allows top-side cooling forenhanced electrical and thermal performanceand wire bond-free construction for improvedreliability. IR’s StrongIRFET™ family alsoincludes PQFN devices with industry-standardfootprints.

New StrongIRFETs take advantage of the latest power packages

INTERNATIONAL RECTIFIER

APPLICATIONS• ORing, e-fuse, high-current load switch• Load switches for battery applications• Inverter switches for DC-motor drives

FEATURES• Industrial temperature grade• 0.7mm DirectFET package profile• 1.05mm PQFN profile




NXP’s PMEG2002ESF: page 5Vishay’s IHLP-2525CZ-8A: page 12Vishay’s VS-xEJH0xxM3: page 12

PARTNERWORKING

NFC/RFID developmentSTMicroelectronics’ Discovery kit for evaluation of M24SRseries, based on M24SR64 dynamic NFC/RFID tag. Orderable Part Number: M24SR-DISCOVERY

FREEBOARDS


Part Number Voltage Max. VGS

Package CurrentRating

RDS(ON) (Typical/Maximum)

@ 10V @ 4.5V @ 2.5V

IRL6283M 20V 12V DirectFET® MD 211A 0.50Ω/0.75Ω 0.65Ω/0.87Ω 1.1Ω/1.5Ω

IRFH820125V

20VPQFN 5x6B 100A

0.80Ω/0.95Ω 1.20Ω/1.60Ω

NA

IRFH8202 0.90Ω/1.05Ω 1.40Ω/1.85Ω

IRFH8303

30V

0.90Ω/1.10Ω 1.30Ω/1.70Ω

IRFH8307 1.1Ω/1.3Ω 1.7Ω/2.1Ω

IRF8301M DirectFET® MT 192A 1.3Ω/1.5Ω 1.9Ω/2.4Ω

The I2C two-wire serial interface consists of abidirectional data line and a clock line. TheM24SR64-Y carries a built-in 4-bit device-typeidentifier code in accordance with the I2C-busdefinition, and behaves as a slave in the I2Cprotocol.

M24SR64-Y is available in a choice of SO-8,TSSOP8, UFDFPN8, or WFDFDN8 packages.

The dual memory interfaces of the M24SR64-Y provide extra flexibility for users



3Q triacs deliver dependability in high-noise orhigh-temperature conditions

A choice of gate sensitivities helps device selection

NXP Semiconductors’ BTA208X-800Fand BTA420X-800CT three-quadranttriacs deliver improved noise immunitythanks to NXP’s 3Q technology, andoffer a choice of gate sensitivities foroptimum performance in variousapplications and environments.

The BTA208X-800F is a ‘series F’ device, whichcombines high commutation capability withlower gate sensitivity for interfacing with low-power drivers such as microcontrollers inenvironments characterised by higher noiselevels.

As a ‘series CT’ device, the BTA420X-800CTis capable of commutating the full rated RMSon-state current of 20A up to its maximumrated junction temperature of 150°C withoutthe aid of a snubber. This device delivers highcommutation capability with maximum false-trigger immunity.

Planar passivated fabrication technologyendows both the BTA208X-800F and

BTA420X-800CT with outstanding voltageruggedness and reliability. Both also displayhigh immunity to false turn-on by dV/dt, and areable to operate with repetitive peak off-statevoltages as high as 800V. The BTA208X-800Fand BTA420X-800CT are offered in theSOT186A (TO-220F) full pack plastic packagefeaturing an isolated mounting base, whichsimplifies connection to a heat-sink by eliminatingany need for additional electrical isolation.

Rugged 40V gate driver minimises IGBT losses

Designed specifically for switchinghigh-power IGBTs, the ZXGD3006E6gate driver from Diodes Incorporatedhelps to increase power-conversionefficiency in solar inverters and a largevariety of motor-drive and power-supply applications.

The gate driver typically provides a drivecurrent of 4A for an input current of 1mA,making it an excellent high-gain buffer stagebetween the high output impedance of acontroller and the low input impedance of theIGBT. With an emitter-follower configuration,the ZXGD3006E6 is inherently resistant tolatch-up and shoot-through issues and deliverspropagation delay times of less than 10ns.

The 40V operating range of the ZXGD3006E6allows full enhancement of the switchingdevice to minimise on-resistance losses, and

permits 20V to -18V gatedriving to prevent dV/dt-induced false triggering ofIGBTs.

To enable circuitdesigners to better defineswitching characteristics forparticular applications, thegate driver offers separatesource and sink outputs,allowing independentcontrol of rise and falltimes. This, combined withpeak current-handlingcapability of 10A, allows forcontrolled charge anddischarge of large IGBTgate capacitances, whichreduces the risk of EMI

issues and cross conduction at higheroperating frequencies.

This rugged gate driver is housed in athermally efficient SOT26 package forenhanced reliability. The device pin-out isoptimised to help simplify PCB layout andminimise parasitic trace inductances.

The ZXGD3006's high drive capability ensures reliable, efficient switching of high-power IGBTs

NXP SEMICONDUCTORS

DIODES INCORPORATED

APPLICATIONS• BTA208X-800F

• Electronic thermostats• General-purpose motor controls

• BTA420X-800CT• High-power motor controls• High-power switching• Heating controls• Applications subject to high

temperature

FEATURES• BTA208X-800F

• 25mA gate-trigger current• 65A maximum non-repetitive on-state

current• 8A rated RMS on-state current

• BTA420X-800CT• 35mA gate-trigger current• 200A maximum non-repetitive on-state

current• 20A rated RMS on-state current


APPLICATIONS• Solar inverters• Motor drives• Power supplies• Plasma display-panel power modules• DC-DC converters in electric vehicles

FEATURES• Independent control of IGBT turn-on and

turn-off times• Propagation-delay time less than 10ns• Near-zero quiescent supply current• Operating-temperature range:

-55°C to 150°C• AEC-Q101 qualified






Wireless transceivers integrate signal processing forsimplicity and energy savings

The ML7344 and ML7406 Short-RangeDevice (SRD) transceivers from ROHMSemiconductor meet international smart-meter communication standards, andintegrate all the signal-processingfunctions required for eachcommunication mode to offload the hostprocessor and significantly reduceapplication power consumption.

The ML7406 is compatible with 868MHzWireless M-Bus, which is the preferredwireless-communication standard for Europeansmart meters. The ML7406 also complies withthe Japanese ARIB STD-T108 920MHzstandard and the worldwide IEEE 802.15.4g750MHz-960MHz standard. By integrating apacket handler designed exclusively forWireless M-Bus, to perform functions such asdata synchronisation and packet-headercontrol on-chip, the ML7406 reduces load onthe host processor by about 20%. This simplifies application development, and

helps to reduce system power consumption toallow longer operating time and reducedmaintenance for battery-operated smart meters.

The ML7344 can be used in variousfrequency bands from 160MHz to 510MHz,and is is compatible with 169MHz and433MHz Wireless M-Bus standards, as well asthe Chinese Q_GDW347.3 meter-communicationstandard. This device has the industry’s lowestpower consumption of 5.9mA in receive mode,and implements high-speed carrier checking toachieve carrier-detection time of less than 0.8ms.These innovative functions help to reducepower consumption to less than 1/10th that ofother devices.

ROHM SEMICONDUCTOR APPLICATIONS• Smart meters• Energy-management systems• Telemetry systems

FEATURES• Transmitter power amplifier with external

control• Programmable frequency-channel filters

and frequency-deviation function• Data whitening in hardware• Received-Signal Strength Indicator (RSSI)• Antenna-diversity function


Advanced IGBTs enhance high-speed switchingperformance

Thanks to an advanced trench-gatefield-stop process technology, theSTGW40V60DF 600V IGBT fromSTMicroelectronics achieves anoptimal balance of conduction andswitching losses forincreased efficiency andpower density in systemssuch as very high-frequency converters.

The IGBT has a smooth and tail-less turn-off characteristic, whichallows high switching speeds withlow losses. In addition, theprocess technology enablessaturation voltage as low as 1.8V,thereby also enhancing efficiencywhen in the on-state. Thesaturation voltage has a positivetemperature coefficient and verytight parameter distribution, whichallows safer paralleling operation.

With maximum operating junction temperatureof 175°C, the STGW40V60DF offersoutstanding reliability while allowing simplerthermal and EMI design. The device is alsoextremely robust, with high dV/dt capability. Aco-packaged ultra-fast soft-recovery diodeminimises turn-on energy losses. Diode-freevariants are also available for more cost-sensitive applications.

Cutting-edge process technology delivers all-round improvements in IGBT characteristics

STMICROELECTRONICS

APPLICATIONS• Very high-frequency converters• Photovoltaic inverters• Uninterruptible power supplies• Welders• Power-factor correction circuits

FEATURES• 40A rated current• Very low turn-off energy (EOFF)• Low thermal resistance• TO-3P, TO-3PF or TO-247 packages




Avago’s ACNT-H313: page 13PARTNERWORKING

These short-range devices from ROHM meet international meter-communication standards

Smart metering and energy managementEvaluation board for the ML7406 SRD transceiver. Orderable Part Number: ML7406EVB

FREEBOARDS





Build better looking displays with high-sensitivityambient-light sensors

The sensor can be mounted behind inked glass without needingan aperture

The enhanced sensitivity of amsTSL25911 digital light sensors ensuresmeaningful readings down to very lowlight levels, which gives designersgreater flexibility when choosing theoptimum sensor location for controllingdisplay brightness.

Light sensors of lower sensitivity than theTSL25911 impose severe constraints on theoptical properties of the panel they are placedbehind, typically darkened glass or anotherattenuating material. Designers must paycareful attention to factors such as the physicalplacement of the sensor, and the minimumintensity of light that must be received in orderto deliver sufficiently accurate measurements.This can be of particular concern forsmartphone and tablet displays, since smallchanges in product styling can result in costlydesign alterations to accommodate lesssensitive devices. If the front panel is inkedglass, an unsightly void or aperture may beneeded at the location of the sensor.

With the introduction of the TSL25911,designers now have far greater flexibility insystem design and layout. Offering outstandinglow-light sensitivity down to 0.000377 lux andwide dynamic range of 600M:1 up to 88,000lux (bright sunlight), these sensors can deliveraccurate and meaningful measurements evenwhen exposed to extremely low light levels.This gives designers freedom to place thesensor away from the direct path of the light it

is measuring and behind a wider variety ofdarkened glass or attenuating materials, or toavoid the need for an aperture in inked glass.

AMS

APPLICATIONS• Digital signage• White goods• Medical and industrial instrumentation• Keyboard-illumination control• Solid-state and general lighting controls• Printer paper detection

FEATURES• Operable in light levels from darkened

room to bright sunlight • Patented high-accuracy dual-photodiode

architecture• Photopic response close to human eye• Programmable interrupt function• Area-efficient 2mm x 2.4mm Optical Dual

Flat No-lead (ODFN-6) package


Broadband LDMOS power transistor simplifiesdesign-in and power control

The NXP SemiconductorsBLS7G3135LS-350P LDMOS S-bandradar power transistor is a 350WLDMOS power transistor intended forradar applications in the 3.1GHz to3.5GHz range.

design-in and allows easy power control.Integrated ESD protection and excellentthermal stability make for rugged performancein demanding applications. Designers can alsotake advantage of the device’s high efficiencyto simplify thermal design. TheBLS7G3135LS-350P also offers high flexibilitywith respect to pulse formats.

The BLS7G3135LS-350P is housed in aSOT539B earless, flanged, balanced, 4-leadceramic package. The device is also available,offering the choice of a flanged and balancedceramic package with four leads and twomounting holes for simple, cost-effective and

The flanged and balanced packages are available with or without bolt-down mounting holes

NXP SEMICONDUCTORS

APPLICATIONS• S-band power amplifiers for radar in

3.1GHz to 3.5GHz frequency range

FEATURES• 12dB power gain at 3.1GHz• 43% drain efficiency at 3.1GHz• 65V maximum drain-source voltage• 11V maximum gate-source voltage• 225°C maximum junction temperature


For samples or pricing [email protected]


secure bolt-down attachment.Both types of device are capable of

withstanding a load mismatch correspondingto a VSWR of 10:1 through all phases underspecified conditions.

The architecture of the BLS7G3135LS-350Pcombines two internally matched transistors inpush-pull configuration, which simplifies



Latest superjunction transistors up to 650V boostgate-drive, conduction and switching efficiency

E series high-voltage MOSFETs fromVishay comprise 650V, 620V, and 600Vsuperjunction devices that have specificon-resistance as low as 20mΩ/cm2,which allows devices in standard high-voltage power packagesto offer lowerconduction losses.

Vishay’s superjunctiontechnology also enables E series MOSFETs tobenefit from low inputcapacitance, which allowssimplified gate-drivecircuitry and helps reducecapacitive switching losses.In addition, low gate-chargeresults in a lower on-resistance x Qg figure ofmerit and permits fasterswitching times. The verylow specific on-resistance,

typically 30% lower than Vishay’s S series devices, enables engineers to buildpower systems with very high current density.

Among the nine 600V E series devicesavailable, the SiHx73N60E has the lowest on-resistance in the family at 39mΩ. The E series also comprises one 620V deviceand eight 650V devices featuring on-resistanceas low as 47mΩ for the SiHx64N65E.

Plug-and-play Wi-Fi modules streamline integrationof wireless-Internet connectivity

Combining a single-chip 802.11 transceiverwith integrated Power Amplifier (PA) and anSTM32 microcontroller with an extensive GPIOsuite, the modules also incorporate timingclocks and voltage regulators within compactdimensions of 26.92mm x 15.24mm x2.35mm. US FCC, European CE and ChineseIC certifications help to streamline productacceptance in major markets worldwide.

The devices are available either as theSPWF01Sx.1y with 1.5Mbyte of integratedFlash, or as the SPWF01Sx.2y with 512kbyteFlash. In addition, the module can be specified

as the SPWF01SA configured withan embedded 2.45GHz ISM-bandantenna, or as the SPWF01SCwith a u.FL connector for externalantenna connection.

The low power consumption andsmall form factor of these modulesmake them ideal for fixed andmobile wireless applications, aswell as challenging battery-operated applications.

The SPWF01Sxx1 orderableparts are released with anintegrated full-featured TCP/IPprotocol stack with added web

ST's intelligent Wi-Fi modules ship with value-added firmware and software built-in

VISHAY

STMICROELECTRONICS

APPLICATIONS• Server and telecom power supplies• Welders• Motor drives• Battery chargers and UPS• Solar inverters• LED lighting• Fluorescent ballasts

FEATURES• Gate charge down to 17nC• Device current ratings: 6A to 73A• Package options:

• TO-247AC• Thin-lead TO-220 Fullpack• TO-220 Fullpack• TO220AB • D2PAK (TO-263)• DPAK (TO-252)• IPAK (TO-251)


APPLICATIONS• Smart appliances• Industrial control and data acquisition• Home automation and security systems• Wireless sensors• Cable replacement• Medical equipment

FEATURES• Single 3.3V power supply • +18dBm maximum output power• 64kbyte on-chip RAM• 32kHz crystal to support low-power

modes• 16 GPIOs• UART, SPI and I2C interfaces




Superjunction technology cuts both resistive losses and capacitive switching losses

server and additional application-servicecapabilities. The software package alsoincludes an AT command-layer interface foruser-friendly access to the stack functionalitiesvia the UART serial port.

The SPWF01SA and SPWF01SCintelligent Wi-Fi modules fromSTMicroelectronics provide a plug-and-play and standalone IEEE 802.11 b/g/nsolution enabling designers to quicklyimplement wireless-Internet connectivityin existing or new Machine-to-Machine(M2M) communication products.


APPLICATIONS• Input over-voltage/reverse-voltage

protection• Load switches• Power-management circuits

FEATURES• 4000V ESD protection built-in• 100% Rg and UIS tested• 21nC gate-charge



APPLICATIONS• Voltage-regulator modules• DC-DC converters• Noise-suppression circuits

FEATURES• AEC-Q200 qualified• Wide range of inductance values:

0.47µH to 22µH • Frequency range up to 1MHz • Handles high transient current spikes

without hard saturation





MOSFET delivers industry-best combination ofvoltage headroom, on-resistance and footprint

The Vishay SiA453EDJ P-channelTrenchFET® power MOSFET has theindustry’s lowest on-resistance at -4.5V and -2.5V gate drive for a -30Vdevice in the PowerPAK SC-70 package.

This industry-benchmark performanceprovides the headroom needed to withstandover-voltage spikes while also minimising on-state losses to allow longer battery run times.The 2mm x 2mm footprint of the PowerPAKSC-70 package saves critical PCB space.

The SiA453EDJ’s on-resistance at -4.5V is36% lower than the closest competing -30VMOSFET, and 50% lower than the closestdevice with -12V gate-source voltage (VGS).

VISHAY

Vishay’s latest AEC-Q101 qualifiedFRED Pt® Ultrafast rectifiers forautomotive and telecom applicationshandle forward current up to 1A in the2.8mm x 1.8mm SMF (DO-219AB)package, while 2A and 3A devices areavailable in 3.7mm x 1.8mm SlimSMA™

(DO-221AC).

VISHAY

Space-savingautomotive inductorsperform up to 180°C

The Vishay IHLP-2525CZ-8A automotive-grade surface-mount inductor in acompact 2525 case size with a lowprofile of 3.0mm is able to operatecontinuously at up to 180°C allowinguse in harsh environments includingunder-the-hood applications.

The composite construction of this inductorreduces buzz noise to ultra-low levels. At thesame time, high resistance to thermal shock,moisture, mechanical shock, and vibrationallow use throughout powertrain and body-electronics applications such as engine- ortransmission-control units, diesel-injectiondrivers, entertainment and navigation systems,wiper motors, HID and LED lighting, heating andventilation blowers, and power seats and mirrors.

VISHAY

Automotive-qualified rectifiers save spaceand energy losses

Surface-mount space efficiency combines with automotive-graderuggedness

NXP’s PMEG2002ESF: page 5IR’s IRL6283M: page 6Vishay’s IHLP-2525CZ-8A: page 12

PARTNERWORKING

NXP’s PMEG2002ESF: page 5IR’s IRL6283M: page 6Vishay’s VS-xEJH0xxM3: page 12

PARTNERWORKING

Case Size 2525Profile 3.0mmInductance Range 0.47µH to 22µHDCR (Typical) 3.87mΩ to 163.0mΩDCR (Maximum) 4.14mΩ to 174.0mΩHeat-rating Current 2.8A to 20.0ASaturation Current 2.2A to 14.0A

APPLICATIONS• Automotive Engine-Control Units (ECU)• ABS controllers• LED-lighting controllers• Telecom DC-DC bricks

FEATURES• Packages:

• 2.8mm x 1.8mm x 0.98mm SMF• 5.2mm x 2.6mm x 0.95mm SlimSMA

• Low leakage current• 175°C maximum operating temperature• Soft recovery characteristic from -40°C up

to 175°C• Compatible with automated Assembly

and Optical Inspection (AOI)

Moreover, the on-resistance at 2.5V is morethan 46% lower than the next best device with-12V VGS.


Part Number Package Maxiumum AverageForward Current

Typical Forward Voltage

Maximum Reverse Voltage

Rise Time

VS-1EFH01WHM3

SMF 1A 0.73V100V

25nsVS-1EFH01W-M3VS-1EFH02WHM3

200VVS-1EFH02W-M3VS-2EJH01-M3

SlimSMA 2A 0.72V100V

25nsVS-2EJH01HM3VS-2EJH02-M3

200VVS-2EJH02HM3VS-3EJH01-M3

SlimSMA 3A 0.74V100V

30nsVS-3EJH01HM3VS-3EJH02-M3

200VVS-3EJH02HM3

The compact SMF and SlimSMA packageseach have sub-1mm profile, and savesignificant PCB space compared to standardSMA, SMB, and SMC packages, whileincreasing power density to lower overall costs.

By combining extremely fast and softrecovery characteristics with low leakagecurrent and low forward voltage, the rectifiershelp to reduce switching losses and powerdissipation. Their planar structure and platinum-doped lifetime control ensures high overallperformance, ruggedness, and reliability.



High-output optocoupler targets mid-voltage 690V ACmotor-drive applications

As demand grows for high-powerindustrial systems, Avago Technologieshas created the ACNT-H313 IGBT gate-drive optocoupler with 2.5A outputcurrent to control the high-voltage IGBTsneeded in the inverterised drives ofthese new applications.

One example is the adoption of 690VAC (mid-voltage) drives to controlhigh-power loads such as motors.Key advantages of 690V AC mid-voltage operation, compared towidely-used lower voltages such as440V AC, include increased powerwithout using higher current leadingto larger copper losses. The cost permotor kilowatt is also reduced. Boththe Chinese standard GB17885 andthe international IEC 61800-5-1safety standard are contributing toincreased worldwide adoption of690V AC operation.

Targeting high-power systems, the ACNT-H313has one of the industry’s widest creepage andclearance distances of 14.2mm and is certifiedto IEC 60747-5-5, with reinforced peakinsulation voltage of 2262V, and to UL with its7.5kVRMS isolation voltage. Using a newstructure and packaging technology, the ACNT-H313 is available in 14.2mm Stretched SO-8package, achieving small form factor with highinsulation capability.

Rugged, highly integrated switching regulatorsaves BOM costs and energy losses

STMicroelectronics’ VIPer26 family offixed-frequency off-line convertersfeatures an integrated power section with800V avalanche ruggedness, to helpsave component count and enhancethe reliability of power supplies, powermeters, and LED drivers.

VIPer26 converters can be used in eitherisolated or non-isolated topology, and integratea PWM controller plus protection mechanismsincluding user-defined over-current limit,protection against feedback-networkdisconnection, hystereticthermal protection, soft start-up and safe auto-restart afterany fault condition. Thecontroller implementsfrequency jittering, which helpsto reduce EMI-filter cost, andthe power section features asenseFET structure to allowvirtually lossless currentsensing. Other features such

The demonstration board allows rapid evaluation of ST's VIPer26 offline converters

AVAGO TECHNOLOGIES

STMICROELECTRONICS

APPLICATIONS• Mid-voltage power systems

e.g. 690V AC drives• IGBT/MOSFET gate drive• AC and Brushless-DC (BLDC) motor

drives• Renewable-energy inverters• Industrial inverters• Switched-Mode Power Supplies (SMPS)

FEATURES• High output peak current of 2.5A • Wide creepage and clearance of 14.2mm • 40kV/µs minimum Common-Mode

Rejection (CMR) at 2000V common-modevoltage

• Under-Voltage Lock-Out (UVLO)protection with hysteresis

• Safety approvals• UL recognised 7500VRMS for 1min.• CSA• IEC/EN/DIN EN 60747-5-5

VIORM = 2262VPEAK


APPLICATIONS• Appliance auxiliary power supplies• Power metering• LED drivers• SMPS for consumer and home-

automation applications

FEATURES• Switching frequency:

• 60kHz (VIPer26Lx)• 115kHz (VIPer26Hx)

• 20W maximum power in open-frameapplication

• Feedback and Compensation pins• Limiting pin for adjusting current-limit set

point




ST’s STGW40V60DF: page 8PARTNERWORKING

12W flyback power supply12W isolated SMPS with primary-side regulation,demonstrating features of STMicroelectronics’ VIPer26fixed-frequency regulator. Orderable Part Number: STEVAL-ISA081V1

FREEBOARDS


as burst-mode operation and very low IC-operating current help designers to meet theefficiency targets set by ecodesign regulations.

VIPer26 family members are available with60kHz or 115kHz switching frequency, eitheras DIP-7 or SO-16 Narrow devices, andpackaged in tubes or tape and reel.

To kickstart the design of a space-savinglow-cost Switched-Mode Power Supply(SMPS), ST’s STEVAL-ISA081V1demonstration board uses a flybackarchitecture with primary-side regulation thatrequires no optocoupler in the feedback loop.This demonstration board provides a compactand cost-effective 12W SMPS with universalAC input and dual 3.3V and 12V outputs thatcan be used in adapters for consumer orhome-automation applications.

Avago's latest optocouplers reflect the growing popularity of mid-voltage drives



Ultra space-saving board-to-board connectors combinesecurity with design flexibility

MS series switches provide ideal properties for use in anti-tamperapplications

HIROSE

APPLICATIONS• LED lighting• Battery connections• Small DC-motor drives• Power supplies

FEATURES• Single contact position• 3A current rating• 350V AC-DC voltage rating• 10 mating-cycles durability• Temperature rating: -35°C to 105°C


Sub-miniature switch family packs value-added featuresfor metering and general use

C&K Components has expanded itsrange of tact switches, toggle and rockerswitches, and smart-card interconnectdevices by adding the MS series ofsub-miniature snap-acting switchesoffering a variety of configurations andfeatures such as interlock detectionand movement detection.

The MS series offers a variety of different levertypes and operating-force options, and givesdesigners the flexibility to satisfy diverserequirements for smart meters and general-purpose applications across the industrial,automotive, medical and consumer sectors.

When used in metering applications the highlyreliable MS Series sub-miniature snap-actingswitches are designed to provide tamper-proofperformance, thereby helping to prevent meterfraud and ensure system integrity.

The switches have a mechanical operating lifeof one million cycles, and feature a contactrating of 5A (maximum) at 125V AC, contactresistance of less than 100mΩ, insulationresistance greater than 100MΩ, and dielectricstrength of at least 1000V AC. The switchesoperate over the temperature range -40°C to 85°C.

C&K COMPONENTS

APPLICATIONS• Industrial and smart meters• Automotive control units• Office equipment• Audio and visual equipment• Medical devices

FEATURES• Silver-plated terminals• UL94V-0 rated cover, housing and knob

materials• Different lever options• Extended mechanical life• UL approval on some designs




P • I • ES E C T I O N

Part Number ContactArrangement Operating Force Pre-travel Over-travel Operating Position

MS-105A01 SPDT 130 ± 30gf 0.6mm max. 0.5mm max. 8.40 ± 0.40mm

MS-105A01-01 SPDT 65 ± 20gf 3.0mm max. 1.0mm max. 9.40 ± 1.0mm

MS-105B01 SPST 230 ± 50gf 0.6mm max. 0.5mm max. 8.40 ± 0.40mm

MS-118305 SPDT 70 ± 40gf 0.50mm max. 0.5mm min. 5.50 ± 0.30mm

MS-118305-A SPDT 25 ± 15gf – 0.5mm min. 6.0 ± 0.80mm

MS-118405 SPDT 0 ± 40gf 0.50mm max. 0.5mm min. 7.0 ± 0.30mm

The Hirose DF59S/SN series ofhigh-current, mono-poleboard-to-boardconnectors have alow profile andslim outline tomeet the needsof LED-lighting andother applicationswhere space is limited.

The connector system comprises ajoining plug and a board-mountedreceptacle to give a board-to-board coplanarconnection. The range offers the choice ofDF59S slim-profile plug and DF59SN ultra slim-profile plug. The receptacle has no moulding,which significantly reduces the depth profile ofthe connector allowing an extremely slimoutline to minimise board space. The matedheight is also extremely low, at only 1.18mm for

the DF59S and 1.2mm for the DF59SN.The DF59S-1S-V receptacle is common to

both plug types and features a friction lock thatprovides a positive tactile sensation and anaudible click when mated. This confirms theconnector is fully engaged, providing the

assurance of complete electrical andmechanical connection.

The connectors have a unique 3-axis floating structure that

permits movement of±0.5mm in X and Y

directions, and±0.2mm in the

Z direction.This allows

designflexibility during

the installationwhen multiple

boards are used.Special innovative,

robust, stress-freecontacts protect the

contact area from any mechanical stress dueto the floating action.


Fig. 3: Magnetic Logic Unit (MLU) comprising a matrix of MTJ cells

Table 1 shows the main parameters of CTSX high-sensitivity magneticsensors

Table 1: The Crocus magnetic-sensor family


CROCUS TECHNOLOGY

This Design Note from Crocus Technology explains how high-sensitivity magnetic sensors can be used to overcome thelimitations of traditional coil sensors for measuring currents inpower-electronic applications.

A common technique for measuring the current flowing in a conductor isbased on Faraday’s Law of induction and involves placing a coil aroundthe conductor; in this case the current flowing in a conductor producesan output equivalent to the rate of change of current. Integrating thisoutput produces a voltage proportional to the current, which can thenbe monitored using an instrument such as an oscilloscope.

This approach has an advantage of being non-invasive and notrequiring direct electrical connection, and hence can be put in place orremoved quickly and easily. Since the coil is isolated from the current inthe conductor being measured, the method is also safe for high currentsranging from a few Amps to over a hundred Amps. One drawback,however, is that the coil can only generate a response when analternating current is present.

Engineers can now overcome this limitation and measure either director alternating currents by using a new type of magnetic sensor thatincorporates an innovative technology called Magnetic Logic Unit (MLU)developed by Crocus. When MLU is used for magnetic-field sensing ittypically involves a matrix of Magnetic Tunnel Junctions (MTJ).

The magnetic tunnel junctionAs the fundamental element of this new generation of magnetic sensors,the MTJ cell is constructed with two magnetic layers separated by a thinoxide which serves as a tunnel oxide. One of the two magnetic layershas a fixed magnetic orientation and it is called a reference layer. The

other magnetic layer iscalled the sensing layer.Figure 1 shows the basicMTJ stack.

The sensing layer is ableto change its orientation,relative to the referencelayer, by up to 180° in thepresence of a magnetic

field, as illustrated in Figure 2. This effectively modulates the resistanceof the MTJ cell. The change of resistance can be directly correlated tothe intensity and angle of the magnetic field. Crocus Technology hasintroduced multiple innovations around this basic principle in developingits magnetic-field sensor product line.

A magnetic-field sensor is composedof multiple MTJ cells, as shown inFigure 3. This structure delivers superiorperformance compared to conventionalmagnetic sensors for applications suchas rotation and speed sensing, positionsensing, linear and angular sensing,and current sensing. Compared to Halldevices, which have low sensitivity ingeneral, the MLU sensor has severalorders of magnitude higher sensitivity.Other advantages include low power,robust design, high stability and highlyreliable performance over a wide rangeof operating temperatures up to 250°C. As such, this type of sensor isideal for applications that are deployed in harsh environments, such asoil-drilling equipment or solar inverters.

Current sensing with MLU-based sensorsThe Crocus CTSX family of magnetic sensors based on the patentedMLU technology is optimised for current-sensing applications. Analysis

of the sensor’sperformance in currentmeasurement shows thatthe sensor has a linearresponse to currentchange, as shown inFigure 4. It is important tonote that the dynamicrange for current sensingbased on CTSX sensorsspans from a fewmilliamps to severalhundred amps dependingon the specific set-up.

D E S I G N N O T E

Sensing direct or alternating current usinginnovative high-sensitivity magnetic sensors

Part Number CTSX100 CTSX200 CTSX300

Output Resistance, RO RO < 1kΩ 1kΩ < RO < 25kΩ RO > 25kΩInput Resistance, RIN 70Ω 70Ω 70ΩVoltage Supply 1.2V 1.2V to 15V 1.2V to 15VInput Bias 10mA 10mA 10mASensitivity 50T-1 50T-1 50T-1

Linearity Range (+/-) 1mT (+/-) 1mT (+/-) 1mTArchitecture R, H, W R, H, W R, H, WPackage QFN16 QFN16 QFN16

Fig. 1: The magnetic tunnel junction comprises two magneticlayers separated by an oxide tunnel layer

Fig. 2: The MTJ-cell resistance changesfrom minimum to maximum as the sensing-

layer orientation moves from 0° to 180°relative to the reference layer

Fig. 5a: Single sensor circuit Fig. 5b: Differential sensor circuit

Figures 5a and 5b show single and differential sensor-circuit configurations

Fig. 4: Linear current response of Crocus CTSX high-sensitivity magnetic sensors

AVAGO TECHNOLOGIES

This Design Note from Avago Technologies takes a close lookat how integrated optical-isolation amplifiers offer an effective,safe and affordable solution for feeding back the voltage,current and temperature information needed to control apower inverter.

To maintain safe and correct operation of a power inverter, the controlleris dependent on receiving accurate information about the load current,DC-bus current, DC-bus voltage, and temperature of the powersemiconductors in the inverter bridge. As a means of feeding back thisdata, miniature isolation amplifiers with built-in safety insulation can offera better combination of price and performance than traditional current orvoltage transducers.

Figure 1 shows a typical block diagram of a power inverter in an AC-motor drive. The isolation amplifier, ACPL-C87A, works as a precisionvoltage sensor together with a resistive divider, R1 and R2, monitoringthe DC bus voltage. The ACPL-C79A works in conjunction with a shuntresistor to provide accurate current measurement. Both devices are ableto perform even in the presence of high switching noise. The isolatedvoltage sensor, ACPL-C87A, can also be used in isolated temperature-sensing designs. In this application, the voltage sensor must linearly andaccurately measure temperature and send it across the isolation barrierthus providing safety insulation.

Figure 2 shows the functional blocks of the ACPL-C87A usedfor voltage sensing. The current sensor, ACPL-C79A, shares allthe key functional blocks of the ACPL-C87A, but is configuredwith differential inputs (VIN+, and VIN−) instead of a single-endedinput (VIN) and shutdown (SHDN). The input-range and gainsettings are also optimised differently, for voltage sensing andcurrent sensing respectively. The ACPL-C87A accuratelymeasures 0V-2V input signal, while the ACPL-C79A measures±200mV linear input range. The ACPL-C87A has unity gain, whilethe ACPL-C79A is configured with gain of 8.2. The ACPL-C87Aand ACPL-C79A have ±1% measurement accuracy, and are alsoavailable as the ACPL-C87B or ACPL-C79B with ±0.5%accuracy as well as the ACPL-C870 or ACPL-C790 with ±3%accuracy. The ACPL-C79x family has the same package andinsulation capability as the ACPL-C87x family.

Voltage sensingUsing the ACPL-C87A as an isolated voltage sensor is straightforward,

Using optical isolation amplifiers in and temperature sensing

Fig. 2: Internal block diagram of the ACPL-C87A

using the voltage divider shown in Figure 1 to convert the voltage signalto a level within the sensor input range. By integrating isolation andsensing, the ACPL-C87A significantly simplifies circuit design comparedto alternative solutions that employ separate sensing and isolationdevices.

Figure 3 shows a detailed voltage-sensing circuit with the ACPL-C87A. Given that the ACPL-C87A’s nominal input voltage for VIN is 2V,R1 is chosen according to:For example:

if VL1 is 600V; and R2 is 10kΩ; then R1 is 2990kΩ

Choosing resistors is flexible. One method is to combine severalresistors to match the target value; for example, 2MΩ, 430kΩ and

560kΩ resistors in series make 2990kΩ exactly. A VIN of 2Vcorresponds to a VL1 of 600V. However, in the case that VL1is not 600V, specific resistance values might be difficult tofind. Another method is to round up the target value to aconvenient value, for example 3MΩ, to make resistorselection easier. In such cases, the scaling relationship mayneed fine-tuning. In the same example with a VL1 of 600V,R1 of 3MΩ, and R2 of 10kΩ, VIN is solved to be 1.993V.

The down-scaled input voltage is filtered by the anti-aliasing filter formed by R2 and C1, with corner frequency of159kHz (the value of R1 is usually much larger than R2, andtherefore neglected in calculation), and then sensed by theACPL-C87A. The galvanically isolated differential outputvoltage (VOUT+ − VOUT−) is proportional to the input voltage.The OPA237, configured as a difference amplifier, convertsthe differential signal to a single-ended output. This stagecan also be made to amplify the signal by adjustingresistors R5 and R6, and, if required, low-pass filter thesignal to limit bandwidth.


D E S I G N N O T E

Fig. 1: Block diagram of power converter in a motor drive

Fig. 3: High-voltage measurement with conversion to an isolated ground-referenced output

VL1 - VINR1 = ___________ xR2

VIN

For more information [email protected]

Bandwidth can be reduced by increasing the capacitance of C4 and C5.The isolated output voltage, VOUT, can be safely connected to thesystem microcontroller.

The input stage of the applicationcircuit in Figure 3 can be simplified asshown in Figure 4. R2 and RIN, the inputimpedance of the ACPL-C87A, create acurrent divider that results in adding anadditional measurement-errorcomponent to the amplifier gain error.Assuming R1 and RIN have a muchhigher value than R2, the resultingloading error is approximately R2/RIN.

The ACPL-C87A RIN of 1GΩ ensuresloading error is negligible for R2 up to1MΩ, where the error is approximately0.1%. This can be reduced to around0.01% by lowering R2 to 100kΩ.

Current sensingAs shown in Figure 1, using the isolation amplifier tosense current can be as simple as connecting a shuntresistor to the input and monitoring the differentialoutput. Figure 5 shows a practical circuit. By choosingan appropriate shunt resistance, any range of currentcan be monitored, from less than 1A to more than100A. In operation, currents flow through the shuntresistor and the resulting analogue voltage drop issensed by the ACPL-C79A. A differential outputvoltage is created on the other side of the opticalisolation barrier. This differential output voltage isproportional to the current and can be converted to asingle-ended signal by an op-amp or sent to thecontroller’s ADC directly.

Selecting a shunt is easy. For example, if a compactmotor has a maximum current of 10ARMS and canexperience up to 50% overload, then the peak current is:

10 × 1.414 × 1.5 = 21.1A

Assuming the sensor input voltage of 200mV for optimal performance,the shunt resistance would be about 10mΩ.

The maximum average power dissipation is about 1W. Various shuntresistors are available for this type of application. They are offered in a case size of 2512 or similar at an affordable price,featuring a 3W power rating, offering acceptable tolerance andtemperature stability.

Over-current conditions in an IGBT can occur due to a phase-to-phase short, a ground short or a shoot-through. The current-sensingdevices on the output phases and DC bus, comprising shunt andisolation amplifier, provide fault detection in addition to currentmeasurement, as shown in Figure 1. These must respond quickly tocurrent surges. The ACPL-C79A has a 1.6µs response time to a stepinput, and so can capture short-circuit and overload transients. Thesignal propagation delay from input to output at mid-point is only 2µs,while it takes just 2.6µs for the output signal to catch up with input,reaching 90% of the final levels.

Isolated temperature sensing using a thermistorThermistors are widely used to measure temperature. Galvanic isolationbetween the potential of the thermistor and that of the system ADC isoften required, especially when the thermistor is mounted near high

voltages or in electrically noisy or poorly groundedenvironments. A lack of isolation can impair safety andinduce electromagnetic interference.

Figure 6 shows a simple isolated temperature-sensor circuit. RT1 and R2 form a voltage divider fromthe floating, constant 5V voltage source that alsopowers the voltage sensor.

RT1 and R2 are chosen to prevent the voltage fedinto the ACPL-C87A isolation amplifier exceeding thefull-scale range of 2.46V. The high-impedance inputterminal of the ACPL-C87A allows a relatively highvalue for R2 without causing a significant loading error.R1, C1 and C2 are selected after reviewing thethermistor manufacturer data sheet.

power inverters for voltage, current

Fig. 4: Simplified input stage

Fig. 5: Typical application circuit for motor phase-current sensing

Fig. 6: A simple isolated temperature sensing circuit

D E S I G N N O T E


A P P L I C A T I O N S P O T L I G H T


Application-optimised system-on-chip support comprehensivesmart-energy platform

Atmel’s SAM4C family of microcontrollersfeaturing dual ARM® Cortex®-M4 coreswith application-oriented peripheralsunderpins Atmel’s comprehensive smart-energy platform designed specifically forsmart-grid communications and electricity-,gas- and water-metering systems.

The dual ARM Cortex-M4 architecture allowsfor integration of the application layer,communications layers and security functionsin a single device. Microcontrollers sharing thisprocessing engine include:• The SAM4C series is the baseline series

which integrates anadvanced cryptographicengine that also supportselliptic curves cryptograpy

• The SAM4CM serieswhich includes ahardware Energy-Metering Analogue FrontEnd (EMAFE) to up toseven channels at16ksample/s

• The SAM4CP serieswhich includes a Power-Line Communications(PLC) module.

ATMEL

APPLICATIONS• Smart-grid communications• Smart meters• Industrial metering• General utility meters

FEATURES• Four physical anti-tamper detection I/Os• Up to five USARTs and two 2-wire UARTs• Up to seven SPI and two 400kHz I2C

ports• Multi-channel timers and PWM• Analogue-conversion block• Wide variety of demo boards and

evaluation kits available



Energy, Inverters and MeteringSilicon carbide (SiC) technology features prominently in thismonth’s Application Spotlight on Energy, with new SiCMOSFETs from ROHM Semiconductor and STMicroelectronicson pages 20 and 24, and ST’s STPSC6H12 SiC Schottkydiodes, on page 21. SiC MOSFETs haveproved more difficult to perfect than otherpower devices, but the technical barriersappear to have been overcome as bothROHM and ST are expanding their MOSFETfamilies. The unveiling late last year of theworld’s first all-SiC power module, for railapplications, could be a sign that thistechnology is finally ready to deliver.Research and Markets sees SiC wafershipments rising from $59m in 2013 to over$550m by 2020.

You will find a host of other new productsto help save energy and build better, moreaffordable equipment like smart meters andsolar inverters. Intersil’s high-voltage DC-DC converters, on page 23, minimise external componentsto save bill-of-materials costs, while Vishay’s EMIPAK-2B press-fit power modules, on page 22, will greatly simplify assembly of

solar power-conditioning circuitry to help lower installationcosts.Communication ICs such as ON Semiconductor’s NCN5150, onpage 19, the Semtech SX1272/3, on page 20, and ST’s ST7580,

on page 22, can improve the performance andcost-effectiveness of smart meters andadvanced metering infrastructure. Atmel’sSAM4C metering-oriented microcontrollersfeatured below, and ST’s STM8Lmicrocontrollers with ultra low-powertechnology, on page 19, have versatile featuresfor managing a variety of smart-meter andsmart-building applications.

Finally, Paul Donaldson’s thoughtful TechnicalArticle, on page 26, analyses the technicalimplications of the recent changes in renewablefeed-in tariffs. Lower tariffs may signal thatsolar is achieving parity with conventionalpower generation, and should create demandfor competitively priced local storage.

Interestingly, extra distributed storage could help to improvegrid stability as we rely increasingly on renewable sources.

There is plenty here to energise your thinking.

Smart-grid communications and meteringSAM4C-EK Evaluation Kit for Atmel SAM4Cmicrocontrollers Orderable Part Number: ATSAM4C-EK

FREEBOARDS


The SAM4C microcontroller family comprises several variants offering features optimised formetrology, security and communications

These microcontrollers provide many optionsand levels of integration, to address the varietyof smart-metering market regulations anddesign requirements.

Key features include best-in-class metrologywith Class 0.2 accuracy and dynamic range ofup to 3000:1 for single- and poly-phaseapplications, as well as low-power ITU-T G.9904PoweRline Intelligent Metering Evolution(PRIME) PLC connectivity including support forenhanced PRIME modes. The SAM4Cmicrocontrollers integrate up to 2Mbytes ofembedded Flash and 304kbytes of SRAM, withthe ability to extend programme and datamemory via a 16-bit external bus interface.There is also a low-power RTC, LCD controller,and anti-tamper features. The high level ofintegration of these devices helps to reducesmart-meter bill of materials by as much as 40%.

E N E R G Y , I N V E R T E R S A N D M E T E R I N G


Ultra low-power 8-bit microcontrollersintegrate energy-saving features

STMicroelectronics’ STM8L162 ultralow-power microcontrollers deliver highperformance for applications on a tightenergy budget by combining ST’s16MHz STM8 CPU core with low-powerperipherals, five power-managementmodes, ultra low-leakage I/Os, andoperating voltage as low as 1.65V.

The proprietarycore delivers upto 16MIPSprocessingpower at 16MHz,while maintainingthe advantagesof a ComplexInstruction Set(CISC)

architecture with improved code density, a 24-bit linear addressing space and an optimisedarchitecture for low-power operations.

The integrated peripherals bring a wide rangeof low-power applications within reach, andinclude a low-power real-time clock withadvanced anti-tamper detection, two 12-bitDACs, a 1Msample/s multi-channel 12-bitADC, two ultra low-power comparators, andmultiple timers including motor-control andPWM timers. There are also two SPI ports, a400kHz Fast-I2C/SMBus/PMBus port, andthree USARTs with ISO 7816 and IrDAcapability.

A choice of 64-pin or 80-pin LQFP packagesprovides up to 67 I/Os having ultra-low leakageof 50nA. By using the free STM8 touch-sensingfirmware library, developers can take advantageof the microcontroller I/Os and routing interfaceto implement up to 16 capacitive-sensingchannels supporting touch-key, proximity,linear-touch and rotary-touch sensors.

The STM8L162 can operate from a supplybetween 1.65V and 3.6V without Brown-OutReset (BOR), or 1.8V to 3.6V with BOR. Thefive low-power modes give developers a choiceof wait, low-power run, low-power wait, active-halt with RTC, and halt mode with 5µs wake-uptime, enabling precision power management tomake the most of the application’s energysource, such as a small battery or solar panel.

M-Bus slave transceiver cuts component count andquiescent current

ON Semiconductor’s NCN5150 single-chip M-Bus slave transceiver helpssimplify multi-energy utility meters byminimising external components,drawing very low quiescent currentand operating from bus voltages downto 9.2V.

The NCN5150 provides all the functionsneeded to meet the physical-layer requirementsfor M-Bus, and supports half-duplexcommunications up to the maximum specifieddata rate of 38400 baud between M-Bussensors and the host-system microcontroller. It translates the bus-voltage modulation toUART voltage levels, and in the other directiontranslates UART voltage levels to bus-currentmodulation. The bus connection is fully polarityindependent.

The NCN5150 can be programmed todeliver a fixed current to the M-Bus forpowering slave devices. This current can beprogrammed in increments of 1.5mA calledunit loads, according to the M-Bus standard.

Two NCN5150 variants are available, capable ofdelivering bus current of up to two unit loadsor six unit loads depending on package style.Devices in the SOIC-16 package style can beprogrammed to supply up to two unit loads,while variants in the QFN-20 package canprovide up to six unit loads. Alternatively, theNCN5150 allows slave devices to be poweredfrom a separate power supply.

As an advanced mixed-signal device, theNCN5150 offers high robustness in addition toits high feature integration and low quiescentcurrent, and is capable of operating over thejunction-temperature range of -40°C to 125°C.

NCN5150 supports high-performance communication in next-generation smart meters

STMICROELECTRONICS

ON SEMICONDUCTOR

APPLICATIONS• Utility meters• Smart sensors• Industrial-network nodes• Internet-of-Things (IoT)• Motor or LED-lighting controls

FEATURES• 8x40 or 4x44 LCD controller with

step-up converter• 64kbyte on-chip Flash memory• 2kbyte data EEPROM• 4-channel DMA• AES-encryption hardware accelerator


APPLICATIONS• Multi-energy utility meters:

• Water• Gas• Electricity

• Heating systems

FEATURES• Integrated 3.3V LDO regulator• Extended power budget for external

circuits• Fast start-up without external transistor• Power-fail function• Adjustable I/O levels




Ultra low-power MCU developmentDiscovery kit featuring ST-Link embedded debug toolinterface, supporting STMicroelectronics’ STM8L ultralow-power microcontrollers. Orderable Part Number: STM8L-DISCOVERY

FREEBOARDS


Process and architectural innovationsdeliver ultra low-power consumption



Long-range RF transceivers cut cost andpower of next-generation wireless meters

Patented LoRa™ modulation employed inthe Semtech SX1272 and SX1273860MHz-1050MHz transceivers allowsprice-conscious applications such asutility meters to achieve high sensitivity forreliable, long-range communication usinga low-cost crystal and bill of materials.

The SX1272 and SX1273 combine a +14dBmhigh-efficiency power amplifier with a receiverdisplaying extremely high sensitivity of -138.5dBm,

resulting in a very high link budget of up to158dB. Thanks to LoRa modulation, thedevices also benefit from high blocking andselectivity compared to conventionalFrequency-Shift Keying (FSK) modulation.High-performance (G)FSK modulation forWMBus, IEEE 802.15.4g, and legacy wirelessstandards is also supported, as well as MinimumShift Keying (MSK), GMSK and On-Off Keying(OOK) modulation.

In addition to their high selectivity, theSX1272 and SX1273 display exceptionalphase-noise performance, receiver linearity, andthird-order intercept (IIP3), allowing equipmentusing these devices to draw significantly lowercurrent than others based on competing

SEMTECH

APPLICATIONS• Automated Meter-Reading (AMR) systems• Smart-building automation• Industrial monitoring and control• Wireless alarm and security systems

FEATURES• Programmable bit rate up to 300kbit/s• 100dB blocking immunity• Fully integrated synthesiser with 61Hz

resolution• Sync-word recognition• Preamble detection


Growing family of SiC MOSFETs expandschoice and flexibility for power designers

ROHM Semiconductor is expanding itsportfolio of Silicon-Carbide (SiC)MOSFETs that enables designers of powersupplies and drives to reduce energylosses and solution size compared toapplications using conventional siliconpower MOSFETs and IGBTs.

The 650V SCT2120AF offers on-resistance of120mΩ, whilst five 1200V devices furtherextend choice and design flexibility with on-resistance ranging from 80mΩ to 450mΩas shown in Table 1.

The SCH2080KE is theindustry's first SiC MOSFET co-packaged with a discrete anti-parallel SiC Schottky BarrierDiode (SBD) that has forwardvoltage three times smaller thanthat of the body diode. This enables designers to saveboard space, simplify layout andreduce BOM costs comparedto equivalent discrete products.

SiC MOSFETs help to reduce power-module size and weight, as wellas energy losses

ROHM SEMICONDUCTOR

APPLICATIONS• Solar inverters• Three-phase inverters• DC-DC converters• Uninterruptible power supplies• Motor drives

FEATURES• Low on-resistance• Fast switching speed• High breakdown voltage• Fast reverse recovery• Easy to parallel• Simple to drive




Part Number BVDSS On-resistance Rated DrainCurrent Package

SCT2120AF (SiC MOSFET) 650V 120mΩ 29A TO-220ABSCT2080KE (SiC MOSFET) 1200V 80mΩ 40A TO-247

SCH2080KE (SiC MOSFET+SiC SBD) 1200V 80mΩ 40A TO-247

SCT2160KE (SiC MOSFET) 1200V 160mΩ 22A TO-247SCT2280KE (SiC MOSFET) 1200V 280mΩ 14A TO-247SCT2450KE (SiC MOSFET) 1200V 450mΩ 10A TO-247

transceivers. Typical receive current is only 10mA,and designers can also take advantage of a200nA power-save mode with register retentionto minimise overall energy consumption.

Both devices provide built-in features thatsimplify circuit design and minimise externalcomponents, including a Received Signal-Strength Indicator (RSSI) with dynamic range ofover 115dB, automatic RF sensing with ultra-fast Automatic Frequency Control (AFC) and apacket engine with up to 64bytes capacity andCyclic Redundancy Check (CRC), as well as atemperature sensor and low-battery indicator.

All-round performance and power improvements give Semtech's LoRa devices the edge in utility-metering applications

In addition, 70-90ns turn-off and turn-on timesfor both devices permit switching frequency inthe hundreds of kilohertz range allowing theuse of smaller external passive devices.

As power-electronics designers increasinglyseek to explore the advantages of SiC devicesto increase energy efficiency, minimise solutionsize, and simplify thermal management,ROHM’s growing family of SiC MOSFETs givesfreedom from issues related to gate oxidebreakdown, threshold-voltage (Vth) stability,and degradation of the body diode duringreverse conduction, making the devices easierto use for all circuit topologies and in the mostdemanding applications.

Table 1: ROHM's portfolio of SiC MOSFETs offers choice and flexibility



159 PUL-SI and 198 PUL-SI snap-in capacitors can be used inpulse, control or filtering applications

The 146 CTI surface-mount capacitors have high ripple-currentcapability

To help designers select the optimumcapacitor for energy storage, smoothingand filtering in applications requiringhigh ripple-current, high-temperaturecapability and low impedance, Vishayoffers three families of aluminiumelectrolytic capacitors providing a choiceof snap-in or surface-mount terminals.

The 146 CTI low-impedance series, part ofVishay’s surface-mount family, comprisescapacitors which are capable of up to 6000hours useful life at 125°C. The whole series isAEC-Q200 qualified for use in automotiveelectronic-control units as well as industrial andprofessional applications.

The devices are vibration proof, featuring fouror six solderable pads, and are also chargeand discharge proof with no peak-currentlimitation. Devices in nominal case sizes from8mm x 8mm x 10mm to 18mm x 18mm x21mm are available in voltage ratings from 16Vto 63V and a capacitance range from 22µF to4700µF.

The 159 PUL-SI series are ultra long-lifesnap-in capacitors that deliver 3000-5000hours of useful life at 105°C, allowing use insolar inverters, general power supplies andaudio equipment, as well as energy storage inpulse systems. 159 PUL-SI capacitors offersmall case sizes from 22mm x 25mm to 35mmx 60mm, in voltage ratings up to 500V andcapacitance from 56µF to 1800µF. High ripple-current capability and low Equivalent SeriesResistance (ESR) ensure energy-efficient andpredictable performance with long-term reliability.

VISHAY

APPLICATIONS• Telecom equipment• Automotive systems• Standard and switched-mode power

supplies• Pulse energy-storage circuits• General smoothing, filtering, and buffering

FEATURES• Ripple current up to:

1.75A (146-CTI)2.8A (159 PUL-SI)3.53A (198 PUL-SI)

• High reliability• ±20% capacitance tolerance• 159 PUL-SI and 198 PUL-SI available in

keyed-polarity snap-in version



1200V silicon-carbide diode saves precious solar energy

Photovoltaic inverters can deliver up to2% more harvested energy to the gridor a local load by replacing ordinarysilicon diodes with the STPSC6H121200V power Schottky Silicon-Carbide(SiC) diode from STMicroelectronics.

The STPSC6H12 takes advantage of SiCproperties to ensure negligible reverserecovery at turn-off and temperature-independent turn-off behaviour that allowsultrafast high-voltage switching with minimalturn-off losses. Other high-voltage applicationsthat require significant reduction of switchinglosses can benefit from using the STPSC6H12in place of an ordinary silicon freewheel orboost diode.

The 1200V reverse-voltage rating is achievedin a physically small device, thanks to thewide-bandgap SiC technology, enabling theSTPSC6H12 to be housed within a DPAK HV2-lead package matching the industry-standard 6.1mm x 6.6mm DPAK outline. Byremoving the central lead of the standard 3-lead package, the DPAK HV meets therequirements of IEC 60664 and UL 840 safetystandards for operation at higher voltage.

SiC diodes deliver rugged, efficient performance in standardcase sizes

STMICROELECTRONICS

APPLICATIONS• Solar inverters• Medium to high-power Switched-Mode

Power Supplies (SMPS)• Uninterruptible Power Supplies (UPS)• Motor drives

FEATURES• 6A maximum forward current• 1.55V forward voltage• 175°C maximum operating junction

temperature• 30pF maximum junction capacitance



The 198 PUL-SI series are 400V and 450Vsnap-in capacitors that offer up to 15,000hours useful life at 85°C, and have high ripple-current capability for use in motor-control andindustrial systems as well as energy-storageand general power-supply filtering applications.Case sizes range from 22mm x 25mm to 35mmx 60mm and capacitance from 56µF to 680µF.

Storage capacitors perform for longer intough environments



Solderless press-fit power modules deliver ease of usefor affordable solar inverters

Each is able to operate at up to 20kHzswitching frequency with low switching losses.VISHAY

APPLICATIONS• Multi-level solar inverters

FEATURES• Integrated thermistor• Square Reverse-Biased Safe Operating

Area (RBSOA)• 600V voltage rating, 75A forward current

(VS-ETF075Y60U)• 1200V voltage rating, 62A forward current

(VS-ETL015Y120H)• Exposed alumina (Al2O3) substrate



Series Package Circuit VCES(V)

IC(A)

TC(°C)

VCEON(V)

TJ(°C)

EON(mJ)

EOFF(mJ)

Speed (kHz)

VS-ETF075Y60U EMIPAK-2B 3-levels half-bridgeinverter stage 600 80 80 1.7 175 1 1.83 Up to 20

VS-ETL015Y120H EMIPAK-2B Double interleavedboost converter 1200 15 80 2.61 150 1.18 0.72 Up to 20

Advanced power-line networking System-on-Chip simplifies smart-buildingand smart energy systems design

As the industry’s first completeNarrowband Power-Line Communication(PLC) system-on-chip, the STarGRID™

family member, STMicroelectronics’ST7580 accelerates the design of smart-building nodes and smart energy systemsresulting in lower bill-of-materialsoverheads and faster time to market.

The ST7580 combines a high performingPower-Line Modem DSP PHY processor withan 8051 protocol-controller core, a fullyintegrated Power-Line Analogue Front End (AFE)and Power-Line Driver, as well as hard-wired128-bit AES encryption block, on the samechip. This innovative architecture maximisesfunction integration while retaining flexibility andprogrammability to support fully customisedprotocols according to specific applications.

Available in a VFQFN48 package, the ST7580features nPSK robust modulation with baudrates up to 28.8kbit/s, programmable carrierfrequency up to 250kHz, optionalconvolutional error-correction coding, signal-to-noise ratio estimation, framing services,error detection and sniffer functions.

The embedded Power-Line AFE implementsthe complete receiving and transmitting signalchains, with ADC and DAC, high-sensitivityreceiver, and high-linearity transmitter featuringintelligent gain control. 5V and 1.8V linearregulators for the AFE and digital core supplyare also integrated. The on-chip Power-Linedriver also features an embedded temperaturesensor, current-control circuitry and configurableactive-filtering topology, and can drive a 14Vppsingle-ended output at up to 1A with ultra-lowdistortion.

The ST7580 PLC IC perfectly fits automationand control wired applications where costeffectiveness, compact design, flexibility androbust communication are needed.

System-on-chip integration saves component count and boostsreliability

STMICROELECTRONICS

APPLICATIONS• Smart-building controllers• Command and control of networked

sensors and actuators • Automation, pumps, small robots• Street-lighting control• Management of distributed energy sources

FEATURES• Fully integrated narrow-band Power-Line

networking system-on-chip• High-performing PHY processor • nPSK modulation up to 28.8kbit/s• Dual-channel operation mode• Host-controller UART interface up to

57.6kbit/s• AES-128 based authentication and

confidentiality services



Power-Line CommunicationsDemonstration kit embedding all functions required forturnkey PLC network based on STMicroelectronicsST7580 PLC system-on-chip Orderable Part Number: EVALKITST7580-1

FREEBOARDS


Currently two modules are available.The VS-ETF075Y60U is a 600Vmulti-level inverter stage in a single

package, and combines Vishay’s Trench IGBTtechnology and FRED Pt® clamping diodes tohandle voltages up to 600V and forwardcurrent up to 75A. The VS-ETL015Y120H is anintegrated solution for a double interleavedboost converter combining Trench IGBTs andHEXFRED® clamping diodes. The rectifier

bypass diode can withstandreverse-bias voltage of up to

1200V, and forward currentup to 62A.

The modulesfeature an optimum

internal layout tominimise internalinductances forbetter EMIperformance.

Multi-level solar inverters are easier tobuild and deliver better performancewith Vishay’s EMIPAK-2B powermodules. The modules are complete,easy-to-use power-conversion blocks ina package featuring solderless PressFit pins that simplify assembly and an exposed substrate that enhances thermal performance.



Plug-and-play DC-DC module takes therisk out of power-converter design

Intersil's modules streamline power-systems design

The Intersil ISL8216M 80V, 4A DC-DCplug-and-play power module requiresonly input and output capacitors, plusone resistor to set the output voltage, tobuild a complete high-voltage powerdesign.

By permitting a simplified, unassisted design, theISL8216M eliminates design and manufacturingrisks while dramatically improving time tomarket. Internally optimised loop compensationhelps to maximise flexibility when selecting theoutput capacitor. Any type of ceramic capacitor,or a low-ESR tantalum, polymer or aluminiumelectrolytic capacitor may be used. The minimalrequirement for external components not onlysimplifies circuit design but also reduces thePCB design to just a component layer and asimple ground layer.

In addition to allowing a highly simplifiedapproach to design where needed, the ISL8216Malso gives designers many options to programmeand customise settings. Over-currentprotection is built-in, and the current limit canbe adjusted by placing a resistor between the

Turnkey RF transceiver on a chipsimplifies low-power wireless integration

The STMicroelectronics SPIRIT1 ultralow-power RF transceiver allows easydesign-in to small devices such asAutomatic Meter Reading (AMR)applications, building-automationequipment and wireless sensor-networknodes.

SPIRIT1 is designed for applications in license-free Industrial, Scientific and Medical (ISM) andShort-Range Device (SRD) frequency bandsbelow 1GHz. It can also be programmed tooperate at additional frequencies in the300MHz to 348MHz, 387MHz to 470MHz,and 779MHz to 956MHz bands.

The air data rate is programmable from 1kbit/sto 500kbit/s, RF output power programmableup to +16dBm. SPIRIT1 can be used insystems with channel spacing of 12.5kHz or25kHz in compliance with the ETSI EN 300220-1 v 2.3.1 EMC and radio spectrumstandard. SPIRIT1 is also compliant withWireless M-Bus and other standards such asthe US FCC CFR47 15 on unlicensed

transmissions, and Japanese ARIB STD-T67, -T93, and -T108 telemetry and controlstandards.

SPIRIT1 integrates functions such as aconfigurable baseband modem supportingdata management, modulation, anddemodulation, thereby requiring only a verysmall number of discrete external components.Built-in functions include cyclic redundancychecking on data and Forward ErrorCorrection (FEC) on packets, and there is alsoan optional automatic-acknowledgement,retransmission, and timeout protocol engine.This reduces overall system costs by handlingall the high-speed link layer operations.

In addition, designers can take advantage ofan integrated Carrier-Sense Multiple-Access/Collision Avoidance (CSMA/CA) engine,an AES 128-bit encryption co-processor forsecure data transfer, and full support forantenna diversity with an integrated antenna-switching control algorithm.

ST's SPIRIT radio family offers many options to simplify systemdesign

INTERSIL

STMICROELECTRONICS

APPLICATIONS• Server power supplies• 48V telecom and datacom applications• 12V and 42V automotive and industrial

equipment• Distributed power converters and Point-

Of-Load (POL) regulation• General-purpose step-down DC-DC

converters

FEATURES• Input-voltage range: 10V to 80V• Output-voltage range: 2.5V to 30V• ±1.5% set-point accuracy• Suitable for automated assembly by

standard surface-mount equipment


APPLICATIONS• Automated Meter Reading (AMR)• Building automation• Wireless-Sensor Network (WSN)

applications• Industrial monitoring and control• Wireless alarm systems• Point-to-point wireless link

FEATURES• 2-FSK, GFSK, OOK, ASK, MSK

modulation• 9mA receive current, 21mA transmit

current at +11dBm• Programmable receiver digital filter from

1kHz to 800kHz• 96-byte receive and transmit buffers

accessible via SPI• Digital RSSI output• Link-Quality Indication (LQI)




Plug-and-play power moduleEvaluation board demonstrating the features of IntersilISL8216M 80V, 4A DC-DC power module. Orderable Part Number: ISL8216MEVAL1Z

FREEBOARDS


module’s Current-limit sensing pin and thePower-input pin. An Enable/Soft-start pin is alsoprovided, which allows the designer to optimisethe soft-start timing. Whilst an internal resistorand capacitor set the switching frequency to300kHz by default, a Frequency-setting pin isprovided which allows the designer toreprogramme the frequency to a value between200kHz and 600kHz. In addition, a Signal-synchronisation pin allows the switchingfrequency to be synchronised to an externalclock.

The ISL8216M is packaged in a thermallyenhanced, 15mm x 15mm x 3.6mm over-moulded High-Density Array (HDA) package,which permits full-load operation without heat-sink or fans.



High-quality battery range boosts lifetime andsafety of devices for smart buildings

With a metallic-lithium anode and a cathodecontaining thionyl chloride (SOCl2), Li-SOCI2cells have a nominal voltage of 3.6V and areavailable in case styles from 1/2AA to Dspanning the capacity range from 230mAh to19000mAh. The Li-MnO2 batteries provide avoltage of 3.0V and are available in standardsizes from CR-1216 with 27mAh capacity toAA with 2000mAh.

Offering high energy density and a low self-discharge rate of less than 1% per year at

room temperature, VARTAbatteries in industry-standardform factors deliver superiorshelf-life and extendedoperational lifetimes of up to 15years.

All cells are UL recognised,which provides a high assuranceof safety throughout the life ofthe application. In addition,advanced glass-ceramic laser-sealing technology ensuresoutstanding durability and safety.The batteries are highly resistantto corrosive environments, andcan withstand temperaturesfrom -55°C to 85°C.

VARTA MICROBATTERY

1200V silicon-carbide MOSFET boosts power-converter efficiency and reliability

As a 1200V Silicon-Carbide (SiC)MOSFET, the STMicroelectronicsSCT30N120 is a high-efficiency replacement forIGBTs in applications suchas solar inverters andserver power supplies toensure the maximumpossible energy efficiency.

ST’s advanced SiC technology,as featured in the SCT30N120,delivers a combination ofexcellent on-resistance per unitarea and very good switchingperformance almostindependent of temperature.This minimises both conductionand switching losses, and alsoresults in small die size allowinghigh power-handling capabilityand breakdown voltage withincompact package dimensions.

The SiC technology also displays minimalvariation of on-resistance with temperature, fromdevice to device. No special gate-drivingcircuitry is required, which enables easy IGBTreplacement.

Housed in ST’s proprietary HIP247™ package,which ensures enhanced thermal performancewithin the industry-standard TO-247 footprint,the SCT30N120 enables designers to achievehigh system power density with high reliabilityand high energy efficiency. The maximumoperating junction temperature of 200°C helpsto simplify cooling challenges.

SiC MOSFETs are an important new addition to the tools available for energy-conscious designers

STMICROELECTRONICS

APPLICATIONS• Solar inverters• Inverters for electric vehicles• Data-centre power supplies

FEATURES• Very fast and robust intrinsic body diode• Low capacitance• Easy to drive



APPLICATIONS• Gas meters• Water meters• Heat meters• Heat-cost allocators • Integrators• Communication modules

FEATURES• Low self-discharge• Superior shelf-life• Broad product range• Standard form factors• High quality and safety



High-quality batteries from VARTAMicrobattery GmbH, including Lithium-manganese dioxide (Li-MnO2) andLithium-thionyl chloride (Li-SOCI2)batteries, are ideal for smart-buildingapplications such as meters, sensorsand actuators.

Better quality batteries last for longer in maintenance-free devices

SAMPLESAVAILABLE

To apply for these free boards go to: www.my-boardclub.com/ftmTerms and conditions apply. Visit www.my-boardclub.com/about_us for details


25

Microcontroller kit assists custom design,supports plug-in extension boardsThe Atmel SAM D21 Xplained Pro evaluation kit is ideal for evaluating andprototyping the Atmel SAM D21 ARM® Cortex®-M0+ based microcontrollers.Supported by the Atmel Studio integrated development platform, the kit provideseasy access to the features of the Atmel SAMD21 series and explains how tointegrate the device in a custom design.

APPLICATIONS• Domestic metering panels• Lighting controls• Industrial automation• Domestic appliances• Automotive security or audio systems

FEATURES• One mechanical reset button• One mechanical user pushbutton (wake-

up, bootloader-entry or general-purpose)• One yellow user LED• 32.768kHz crystal• USB interface, device and reduced host

mode• 8Mbit serial Flash• Three Xplained Pro extension headers• Embedded debugger• USB powered• Supported with application examples in

Atmel Software Framework


High-stability X1 and X2 capacitors ensurequiet life for utility meters

Vishay's F339X1 480V AC Class X1, andF1772 X2 Class X2 interference-suppression film capacitors have internal series connection, are designedfor across-the-line applications and offera very long lifetime with highly stablecapacitance.

These capacitors are also useful for dutiessuch as series impedance or voltage dividing,which require very good capacitance stability inapplications which include metering and powersupplies. The 480V AC-rated F339X1polypropylene-film capacitors are offered in E12capacitance values from 0.001µF to 1.0µF.The F339X1 series is realised in small radialpackages with lead pitch from 7.5mm to 27.5mmand can replace the older MKP338-1 series.

The F1772 series are Class X2 polyester filmcapacitors with AC-voltage rating of 310V .These components can handle high relative

VISHAY APPLICATIONS• Smart meters• Standard electricity-metering systems • 3-phase and continuous across-the-line

X1 applications (F339X1 480V AC)• 3-phase power supply (F339X1 480V AC)• Continuous across-the-line X2

applications (F1772 X2)• Automotive electronic-control units

(F1772 up to 470nF)

FEATURES• 110°C maximum application temperature• Safe end-of-life behaviour• Pass climatic testing according to

IEC 60068-1• Internal series construction • IEC/ENEC/UL 60384-14, CSA E384-14

UL-class 94 V-0 plastic case


The USB-powered board is easy to use andincludes the SAMD21J18A microcontroller withsystem essentials such as an 8Mbit serial Flashand 32.768kHz crystal on board.

The SAM D21 Xplained Pro evaluation kitincludes an on-board embedded debugger,and no external tools are required toprogramme or debug the SAM D21device.



Orderable Part Number: ATSAMD21-XPRO

FREEBOARDS


Expansion boards are available separately, and connect easily to thebaseboard

F339X1 capacitors are available in 330V AC and 480V AC ratings

Future Electronics’ Board Club: supporting innovative electronics designEurope’s electronics industry thrives on the application of innovation and creativity, and an essential innovator’stool in design projects is the development board. The Board Club website is a Future Electronics resource forusers of development boards. Here, and only here, Board Club members can gain access to exclusive freedevelopment boards and development board offers.If you would like to register for membership, please visit: www.my-boardclub.com/register.php

humidity of 85% and 85°C for 1000 hours at240V AC. These high-stability devices areavailable in E12 capacitance values from0.01µF to 2.2µF, in radial packages with leadpitch from 15mm to 37.5mm. Capacitors up to470nF are also AEC-Q200 qualified.

The standard tolerances for all devices are±20% and ±10%. Tolerance of ±5% is availableon request. Both series meet IEC/ENEC/UL60384-14 and CSA E384-14 referencestandards. The F339X1 series also meets theChina Quality Certification (CQC) standards.

The Xplained Pro extension kits, includingAtmel I/O1 Xplained Pro, OLED1 Xplained Pro,QT1 Xplained Pro and PROTO1 Xplained Pro,offer additional peripherals to extend features ofthe board and ease the development of end-product designs.

T E C H N I C A L V I E W

Recent reductions in the grid Feed-in Tariff (FiT) offered toowners of renewable-energy generators such as domesticphotovoltaic systems are expected to increase demand forefficient and cost-effective energy storage. This article byPaul Donaldson, EMEA Sales Director, Future EnergySolutions (a division of Future Electronics) examines theeconomics of the changes to FiT, and the battery technologiesmost likely to meet end-users’ storage requirements.

Governments in Europe have significantly reduced Feed in Tariff (FiT)incentives, which previously subsidised owners of residential solar powergeneration to supply power back to the grid. Owners must now decidewhether it is more beneficial to sell power to the grid, or to use thepower themselves to reduce the net amount they draw from the grid.

For a residential installation in the UK, the current FiT for each 1kWhgenerated is around 15p (€0.17). The average cost per kWh of energyused in the home is also typically around 15p. The utility company willpay the Photovoltaic (PV) panel owner around 5p for each 1kWh fedback to the grid. This means the difference of 10p is equal to the profitthe utility company makes. In other words, the PV panel owner gains10p per kWh from storing and using their own solar energy instead offeeding it back to the grid.

A typical 4kWp (16 panels) system in the UK would generate up to4,000kWh annually. Let us assume 50% of this is sold back to the grid,with the rest used directly at home. This 2,000kWh of exported energyrepresents £200 of annual return foregone. The return on storedelectricity is likely to be even larger in the sunnier southern parts ofEurope, as illustrated in Figure 1.

Ideally, for the panels’ owner in the UK, the utility company would paythe equivalent of what it charges them (15p) for the energy exported tothe grid. This so called ‘net metering’ is currently available in, forexample, the Netherlands, where it covers the home’s total electricityusage up to a maximum of 5,000kWh.

In the absence of net metering, the PV panel owner can avoid feedingin to the grid by installing a battery to store electricity generated duringthe day for use at night. Figures 2 and 3 compare energy generation andconsumption patterns for systems with and without storage.

Fig. 2: PV installation with no storage facility exports electricity generated at peak daytime hours to the grid.Power is drawn from the grid at night

Fig. 3: The output from panels can charge a battery system during peak generation hours, to supplyevening and night-time domestic demand

Fig. 1: Solar generators with storage capability deliver better returns in sunnier climates, where the cost perWatt is lower than grid electricity

Storage – the next

EMAIL [email protected] FOR SAMPLES AND DATASHEETS26

The typical lifetime of a battery array is around 10 years. With a £200annual return to be made by avoiding feeding in power to the grid, thebattery system must cost less than £2,000 (£200 x 10) to be aworthwhile investment. Unfortunately, large-scale battery prices are stillhigher than this today. But this could change in the coming three years.

READ THIS ARTICLE TO FIND OUT ABOUT• Changes in government incentives for owners of domestic

photovoltaic systems• The shift from grid feed-in to local use demanding better-performing

energy storage• The leading battery technologies providing efficient, cost-effective

storage

T E C H N I C A L V I E W

Changing incentivesIncentives are one means to boost the uptake of solar storage. On 1 May2013 Germany introduced low-interest loans to help fund the installationof batteries for PV systems, plus an allowance from the Ministry ofEnvironment to cover 30% of the battery system's cost. This incentive isavailable for new residential systems and solar plants of up to 30kWcapacity.

Other governments might take a similar approach, since adoption ofresidential energy storage can help to enhance grid stability andreliability: the thousands of small-scale residential battery systems canhelp utilities to balance and manage electricity supply and demand moreeffectively. Incentive schemes such as Germany’s should now encourageinvestment in the development of advanced storage systems and gridservices, as shown in Figure 4.

Fig. 4: Rapid growth in revenues from solar energy storage is forecast


big thing for solar?


Advanced battery technologiesConsiderable technological innovation is certainly expected in energystorage, yet remarkably the lead-acid battery is today the lowest-costtechnology, and is expected to be the most widely used battery in PVsystems for much of this decade.

There is, however, growing interest in the use of lithium batteries in thesolar sector. Sales of lithium solar-energy storage systems are expectedto reach $235m worldwide by 2018. Chinese firms in particular seemlikely to drive this market forward, since China’s strength in consumerelectronics makes it the world’s most important source of lithium cells.

There must also be a question of whether performance andenvironmental concerns over the use of Valve-Regulated Lead-Acid(VRLA) batteries will encourage quicker adoption of lithium types. In theVRLA (also known as Sealed Lead-Acid or SLA) battery’s favour is itsproven characteristics and low maintenance requirement because, unlikeother lead-acid types, the user does not need to periodically add water.It can be mounted on its side and will not leak when properly used. Oflow energy density, it is large and heavy, although for residentialapplications this is seldom an important drawback.

The main limitation of a VRLA battery is that it can only be used to50% depth of discharge. If it is discharged beyond this, its lifetime isdramatically reduced, typically to less than a year. This will tend to meanthat the user will over-specify their system’s capacity to try to ensure thatdaily usage requirements can be met by no more than 50% of nominalcapacity. This tends to dilute the main advantage of VRLA technology:the battery’s low purchase cost.

Lithium-ion battery types are in the region of two to four times moreexpensive to buy than the lead-acid equivalent today, as shown in Table 1.

This is partly due to the need for sophisticated electronic systems thatprovide temperature, over-voltage and over-current protection and thatmanage the charging and discharging processes. The growingpopularity of large lithium-ion batteries should yield economies of scale,making them more financially viable in the longer term.

Perhaps the most promising of the lithium battery types is lithium ironphosphate (LiFePO4 or LFP). Today it is very expensive, as there are fewsuppliers and the manufactured volumes are small. Among severaladvantages over other technologies, it is inherently safer than traditionalcobalt-based lithium-ion, as it cannot release exploding gases, and it isapproximately five times lighter than an equivalent lead-acid battery.

These batteries can be cycled (fully charged and discharged) 2,000times, and can operate down to a very low Depth of Discharge (DoD).For instance, when repeatedly discharged to 80% DoD, the batteriescan maintain an average lifetime of 6,000 cycles, offering a typical 3.5 to4.5 years’ usage in residential PV systems, taking into account the usualenvironmental considerations such as the operating temperature of thebattery.

By contrast, an SLA battery discharged to 70% DoD has a cycle lifeof 1,200, whereas after a complete discharge the SLA battery’s lifetimeis shortened to no more than 300 cycles.

ConclusionIn the short term, lead-acid batteries are rightly forecast to be thedominant type in use in solar storage applications. For environmentalreasons, however, and because of short cycle life, low energy densityand excessive weight, lead-acid seems sure to be phased out in thenext few years.

The economic case for small PV installations to use energy storage toenable self-consumption, rather than feeding electricity in to the grid,becomes stronger every year as both FiTs and the cost of batteries fall.In the medium term, Future Energy Solutions’ prediction is that theLiFePO4 battery type will replace lead-acid as the preferred technologybecause of its superior performance and safety.

Future Energy Solutions provides battery solutions from UPG andNorthStar, PV modules from EMMVEE and charge controllers fromMorningstar. The local field technical marketing teams of Future EnergySolutions can provide help on the implementation of on- or off-grid solarapplications.

Lead Acid NiCd NiMH Li-ion LFP

Battery/Pack SpecificEnergy Wh/kg 30-50 45-80 60-120 120-200 110-190

Cycles 250-1000 1500 300-500 500-700 300-4000

Charge Time (Hrs) 2-5 1 2-3 1-3 0.5-2

Self-discharge/Mo % 5 20 30 5 1-2

Average OperatingVoltage per Cell 2 1.2 1.2 3.6 3.2

Relative Battery/PackCost 1x 2x 2-3x 3-4x 2-4x

Relative Safety 2 1 1 4 1.5

Relative Environmental 3 4 2 2 1

Table 1: Lithium-iron-phosphate (LFP) holds the most promise for reliable large-scale energy storage forPV systems


Documents

Energy, Inverters and Metering · communication and control peripherals NXP Semiconductors has introduced a new Wafer-Level Chip-Scale Package (WLCSP) for its LPC1768 MCUs. Measuring