61
ELEC-E3550 Integrated RF circuits Spring 2017 Spring 2017 Department of Micro and Nanosciences Stadius, Ul Haq Integrated RF circuits Spring 2017

ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

  • Upload
    others

  • View
    0

  • Download
    0

Embed Size (px)

Citation preview

Page 1: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

ELEC-E3550Integrated RF circuits

Spring 2017Spring 2017

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 2: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Topics of the previous lecture

Concepts related to mixers”mixing” = multiplication in time-domain = frequency shift in frequency domainConversion gain, SSB / DSB NF, IIP2 / IIP3, ICP, isolation

Active mixersCascode amplifier

Active mixer Active mixer Single-balanced mixer

Double-balanced mixerGilbert cell mixer

Passive mixersVoltage-mode passive mixer

Current-mode passive mixer

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 3: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Frequency Synthesizers (SX)Channel

• System level & concepts• SX principles

0

A D

Pre-select

Channel select

I

• Phase-locked loop• ”theory” / CP-PLL / ADPLL

0 90

A D

LO

Q Break

• Oscillators• Ring & LC

• Frequency dividersD

AI

Break

• Frequency dividers• Quadrature generation

90o

DAQ Break

Exercises & HomeworkD Break

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 4: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

SX Requirements

LO phase noise

spurious tones

fLO

harmonics

fLO

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 5: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

SX Requirements

LO phase noise

spurious tones

fLO

harmonics

• Frequency span --- cover the required bandwidth + margin for PVT

fLO

• Channel spacing & settling time• Phase noise • IQ-generation --- Amplitude and phase imbalance (IRR)• IQ-generation --- Amplitude and phase imbalance (IRR)

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 6: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Impact of Phase Noise

Phase noise impacts

LOInterferer Down-

ConversionQ

Phase noise impactsIQ-constellation Reciprocal mixing

signal

Conversion

I

In TX, phase noise causes out-of-band spurious emission. In TX, phase noise causes out-of-band spurious emission.

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 7: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Impact of Phase Noise

Phase noise impacts

LOInterferer Down-

ConversionQ

Phase noise impactsIQ-constellation Reciprocal mixing

signal

Conversion

I

In TX, phase noise causes out-of-band spurious emission.

Phase noise requirement depends on:• Channel spacing• Modulation method (eg. compare QAM-16 vs. QAM-256)

In TX, phase noise causes out-of-band spurious emission.

• Modulation method (eg. compare QAM-16 vs. QAM-256)• Required sensitivity and selectivity• Specified environment (”hostile” / ”friendly”)• TX: emission mask

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 8: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Phase Noise SpecificationsPhase noise specification for SX given either by Phase noise specification for SX given either by • N/C at certain offset, e.g N/C@1 MHz < -120 dBc/Hz• Integrated N/C profile can be then converted to jitter spec

System Band [MHz]

Ch. spacing [kHz]

N/C [dBc/Hz]@kHz

norm-N/C* [dBc/Hz]

IS54 824-849 30 -115@60 -132

GSM 880-915 200 -141@3000 -125GSM 880-915 200 -141@3000 -125

DECT 1880-1900 1728 -97@1800 -91

WCDMA 1920-1980 5000 -129@8000 -111

WLAN (b) 2400-2483.5 22000 -103@1000 -105WLAN (b) 2400-2483.5 22000 -103@1000 -105

BlueTooth 2400-2483.5 1000 -109@1000 -111

GPS 1575.42 - -95@1000 -93

DOCSIS** 47-862 6000 -82@10 -100DOCSIS** 47-862 6000 -82@10 -100

DVB-S 10700-12750 fixed LO1 -95@100 -131

* Normalized to 2GHz and 1MHz, N/C~(fo/fm)2 **data over cable-TV

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 9: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

IQ ImbalanceHartley Receiver DCR

LNA

LO_I

LNA

LO_I

A D

Hartley Receiver DCR

LNA

LO_Q

LNA

LO_Q

A D

• LO signals (I) and (Q): equal amplitude (A) and 90-degree phase shift ( )• LO signals (I) and (Q): equal amplitude (A) and 90-degree phase shift ( )• A and results in imperfect image rejection or reduced SNR for DRC• Every signal path element contribute to IRR, but usually LO imperfections dominate• Image-Reject Ratio (IRR) is a measure of LO signal imbalance • Image-Reject Ratio (IRR) is a measure of LO signal imbalance

2

21 2 cos1 2 cos

bal bal

bal bal

A AIRR

A A1 2 cosbal balA A

• Typically DCRs need IRR > 30 dB Abal < 0.5 dB and < 4°• LO chain often includes limiting amplifiers phase error remains a challenge

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 10: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Frequency Synthesis Methods

1. Direct analog synthesis

2. Direct digital synthesis ”DDS”

”DAS”

2. Direct digital synthesis

3. Indirect digital synthesis

”DDS”

3. Indirect digital synthesis

4. Indirect analog synthesis”PLL”

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 11: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Direct Analog Synthesis (DAS)

……sw

sw

sw

f1

witch

witch

witch

f2f3f4

h h h

• Filters are filter banks and/or tunable filters• Amplifiers not drawn

Main problem for RF IC implementation: good filters can not be integrated.

• Amplifiers not drawn• Chain may include dividers as well

Main problem for RF IC implementation: good filters can not be integrated.

DAS is in use e.g. in measurement instruments – High perf, high price

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 12: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Direct Analog SynthesisAt RF IC context we may use simplified versions of DAS.At RF IC context we may use simplified versions of DAS.

”Manipulate a frequency tone with basic mathematical operators” - addition mixer- substraction mixer- substraction mixer- division frequency divider- multiplication frequency doubler / tripler

Band 1Band 1

Band 2

Band 3

/ N1

/ N VCOFractional-N

PLL

Band 3

Band 4

/ N2

Band 5 / N3 N4

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 13: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Direct Digital Synthesis (DDS)

Phase Accumulatordata ROM D/A

time-sampledphase

time-sampledamplitude

analogsignal

Accumulator

clock

data ROM D/A

Problems: Problems: needs a high-speed D/Aneeds fclock > 3* fout

DDS is used in base stations and LF radios (e.g. military)DDS is used in base stations and LF radios (e.g. military)Enables very complex modulations (military)

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 14: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Indirect FS -- Phase-Locked Loop

VCO PDfRef fout

Basic idea is to lock the oscillator into the incoming signal using a feedback loop.Compare to: feedback amplifier analysis in electronics

feedback systems in control theory and automationfeedback systems in control theory and automation

VCO PDfRef fout

1/N1/N

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 15: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Some Books on PLL’s

• Many basic text books on RF/analog IC electronics include a chapter on PLLs– Razavi: RF Microelectronics, – Lee: The Design of CMOS RF IC, – Lee: The Design of CMOS RF IC, – Grebene: Bipolar and MOS Analog IC Desing, etc.

• U. Rohde: many books on PLL’s, not RF IC oriented• F. Gardner: Phaselock Techniques • F. Gardner: Phaselock Techniques • R. Best: Phase-Locked Loops: design, simulation and applications • J. Crawford: Frequency Synthesizer Design Handbook• D. Wolaver: Phase-Locked Loop Circuit Design• D. Wolaver: Phase-Locked Loop Circuit Design• C. Vaucher: Architectures for RF Frequency Synthesizers • D. Banerjee: PLL Performance, Simulation and Design (wireless.national.com) • ... and many more• ... and many more

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 16: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Typical Results of Linear Analysis

VCOspur

C/Nphase noise

PLL

spur

log

PLL performs a high-pass filtering for the phase-error flat in-band noise

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 17: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Integer-N PLL:Fractional-N Concept

• reference frequency = channel spacing• if N is very large

• stability requires loop-BW < fref/10 loop-BW small long settling time & poor phase noise reduction at high offsetlong settling time & poor phase noise reduction at high offset

• ref. source & PD noise is multiplied by N • Recall: GSM1800 ch. spacing=200 kHz, N~10000

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 18: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Integer-N PLL:Fractional-N Concept

• reference frequency = channel spacing• if N is very large

• stability requires loop-BW < fref/10 loop-BW small long settling time & poor phase noise reduction at high offsetlong settling time & poor phase noise reduction at high offset

• ref. source & PD noise is multiplied by N • Recall: GSM1800 ch. spacing=200 kHz, N~10000

Basic integer-N PLL is not good for small channel-spaced systemsBasic integer-N PLL is not good for small channel-spaced systemsImprovments on PLL architecture (mixers in loop, dual-loop, frac-N PLL)

Dual-modulus divider fTfTDual-modulus divider

111

1

f

fN

fTT

TNf

TTT

outin

BA

Bin

BA

A

fin fout

)1(

111

NT

TTNT

TTNff

B

BA

A

BAeffin

out

TA TB

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 19: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Fractional-N Concept

• With the aid of dual-modulus divider division ratio can be set to N...N+1Example: TA/(TA+TB)=90%, TB/(TA+TB)=10% and N=100 => Neff 100.1

Frac-N PLL provides small channel step and still large loop-BW.Frac-N PLL provides small channel step and still large loop-BW.

• Main problem : ”fractional spurs” Can be partly compensated by randomizing the timingCan be partly compensated by randomizing the timingand using noise shaping.

(for details, Razavi presents an easy-to-read presentation in RF Microelectronics)

• Frac-N PLL requires more hardware and suffers from high spurios content• Frac-N PLL requires more hardware and suffers from high spurios contentand increased noise level compared to int-N PLL.

use only when integer-N is not feasible.

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 20: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Charge-Pump PLL

VCOLoop FilterPhase-Frequency

Detector

Charge Pump

UP

PFD fOUT

Loop FilterDetector

fREF

UP

DW

1/N11/N2 1/N11/N2

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 21: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

)cos()()sin()( tVtvandtVtv

Phase Detector

1) Analog multiplier (mixer)

K depends on input signal level, not good !

)2sin()sin(

)cos()()sin()(

2121

2121

2211

tVVVVKVtVtvandtVtv

mD

KD depends on input signal level, not good !

If mixer inputs are overdriven, outputs saturates into ”0” or ”1”This is equivalent to drive a XOR gate with squarewaves.This is equivalent to drive a XOR gate with squarewaves.

2) Digital comparator (XOR gate)- performs essentially the same function as analog multiplier

These circuits do not provide frequency information: PD can not distiguish whether in> out or in< out : this is called ”self acquisition”A small DC component in the error signal guides the loop.Therefore, it takes a relatively long time for the loop to settle.Therefore, it takes a relatively long time for the loop to settle.

we need a phase-frequency detector

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 22: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Phase - Frequency Detector

• also called ”tri-state phase detector”• also called ”tri-state phase detector”• two D-flipflops and AND-gate• Delay element is used to avoid ”dead-zone” problem.

+ edge-trigged circuit duty-cycles of the inputs 50% OK

+ Frequency steering

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 23: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Charge Pump

Up/Dn control pulses from PFD are driving a buffer stage.• Three basic configurations• Key challenges:

• Linear response ( time – charge )

UP

DN • Linear response ( time – charge )• Matching of IUP / IDW

DN

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 24: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

CP creates an additional pole into transfer function loop becomes potentially unstable

Loop Filter

loop becomes potentially unstableR has to be added for stability, and another C for attenuating ripple.

Active filter+ Can provide DC gain: additional design freedom+ (partial) remedy for charge leakage+ Not resiprocical suppress VCO feedthrough+ Not resiprocical suppress VCO feedthrough- Higher noise, higher component count & power

Oscillator and divider will be discussed in detail later.

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 25: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Impact of Technology EvolutionRecall our earlier paradigm changes, e.g.• GaAs MESFET Si Bipolar CMOS• Superheterodyne receiver DCR• Monolithic capacitors: vertical field lateral field• Gilbert cell mixer current-mode passive mixer

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 26: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Impact of Technology EvolutionRecall our earlier paradigm changes, e.g.• GaAs MESFET Si Bipolar CMOS• Superheterodyne receiver DCR• Monolithic capacitors: vertical field lateral field

“Simple PD” (mixer)PLL

• Gilbert cell mixer current-mode passive mixer

PLL

Charge-pumpPLL

All-digitalPLL

1990 2000 20101990 2000 2010

“In a highly-scaled CMOS technology, time-domain resolution of a digital signal edge transition is superior to voltage resolution of analog signals”

R. Bogdan StaszewskiManager of

TI’s DRP group

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 27: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

All-Digital PLL

DCO

TDCfOUT

DCOLoop Filter Dither

fREF

FCW Tune

1/N

• Frequency control word (FCW) defines the target frequency• Time-to-Digital converter (TDC) describes the output frequency with a digital word• Error signal (digital) is filtered in the digital loop filter • Error signal (digital) is filtered in the digital loop filter • Digital-controlled oscillator (DCO) is tuned accordingly• Dithering (compare to frac-N principle) is used to achieve fine frequency step• Prescaler used to lower fout (only if needed!) (65-nm CMOS: TDC fmax~1.7 GHz)

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 28: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

10 minutes break 10 minutes break

OscillatorsOscillatorsDividersIQ generation

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 29: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillators

Oscillator is an autonomous device which generates a waveformOscillator is an autonomous device which generates a waveformIt converts power from DC to ”AC”

Variable frequency oscillator converts a control signal into frequencyVariable frequency oscillator converts a control signal into frequencyinformation is converted from one mode to another

• VCO – voltage-controlled oscillator• ICO – current-controlled oscillator• ICO – current-controlled oscillator• DCO – digitally controlled oscillator

Oscillator waveform can beOscillator waveform can be• Sinusoidal : low level of higher harmonics• Square : high level of higher harmonics, ”clock signal”

• ramp or triangular is used at LF control circuits

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 30: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillator Classification

oscillation mode oscillator structure

• Stable (no oscillation)• Harmonic (sinusoidal)

• Phase shift (RC)• Gm-C

• Harmonic (sinusoidal)• Relaxation• Chaotic

• Gm-C• Crystal• MultivibratorNo correlation !!

• Ring • LC

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 31: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillator Terms and Figures of Merit • Tuning Range : ratio of maximum and minimum oscillation frequency• Tuning Range : ratio of maximum and minimum oscillation frequency• VCO gain (KVCO) and its deviation (linearity)• Output power (preferably constant)• supply voltage / current consumption / power efficiency• supply voltage / current consumption / power efficiency• Distortion in ”sinusoidal” oscillators• Temperature stability ( freq/ T)• Pushing (PSRR) ( freq/ supply)• Pushing (PSRR) ( freq/ supply)• Pulling (load) : Frequency shift caused by load impedace variation• Pulling (injection) : Frequency shift caused by external disturbance• Phase Noise / Jitter• Phase Noise / Jitter• Die Area (IC implementation) / Component count (discreate circuits)

RangeTuningnconsumptioPowerNoisePhase

RangeTuningFOM

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 32: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Ring Oscillator

0 1 0 11 0 1 00 1 0 10 1 0 1

Nfosc 2

1

NCIf

IC

loadosc

load

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 33: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Ring Oscillator

0 1 0 11 0 1 00 1 0 1 Real implementation is differential and

simple cross-coupling creates proper fb.0 1 0 1 simple cross-coupling creates proper fb.

+ can be transistor-only circuit small areaN

fosc 21

small area+ Easy to tune, large tuning range

power cons. is relative to freq.(although follows technology-nodes)

NCIf

IC

loadosc

load

(although follows technology-nodes)moderate (poor) phase noise

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 34: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

LC Oscillator

Gloss Gneg0

1osc

GGLC

Is negative resistor a plausible device at all?

0negloss GG

Is negative resistor a plausible device at all?

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 35: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

LC Oscillator

Gloss Gneg0

1osc

GGLC

Is negative resistor a plausible device at all?

0negloss GG

Is negative resistor a plausible device at all?

Transconductor in unity feedback Gunn diode

voutI

)( outm

outin vg

vR

i=gm vinvin

-vout

V

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 36: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Negative Conductance : Unity Feedback (most of modern RFIC VCOs use these)

• Cross-coupled pair (CCP) : NMOS / PMOS / CMOS• Biasing : top / bottom / none• Biasing : top / bottom / none• Advanced techniques like noise filtering

Really many different topologies exist

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 37: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

NMOS CCP Biasing

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 38: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

CMOS Cross-Coupled Pair

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 39: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Negative conductance : reactive feedbackZinZin

Vbias

C

1mgZ

nmos = gm and Vbias–node is signal ground

Vbias

C

222

1C

min jC

gZVbias

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 40: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Negative conductance : reactive feedbackZinZin

Vbias

C

1mgZ

nmos = gm and Vbias–node is signal ground

Vbias LjRC

222

1C

min jC

gZVbias LjRcoil

Add a coil oscillator

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 41: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Negative conductance : reactive feedbackZinZin

Vbias

C

1mgZ

nmos = gm and Vbias–node is signal ground

Vbias LjRC

222

1C

min jC

gZVbias LjRcoil

Add a coil oscillator

Some Classical Oscillators

bias bias

MEISSNER ARMSTRONG HARTLEY COLPITTS

CLAPP MILLER

bias bias

bias

bias

bias

bias

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 42: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Linear Analysis Methods

B(s)

A(s)1) Loop-Gain

180)()(1)()(

oscosc

oscosc

jBjAjBjA

B(s)

0)()( 00 LG RRR

2) Negative-Resistance

oscosc

ZG ZL0)()(

0)()(

00

00

LG

LG

XXXRRR

3) Nodal EquationSee details:L. Larson : RF and microwave circuitdesign for wireless communications

0

000

YIM

YREYVY

design for wireless communications

in each case you get two equationsone for fosc and second for -gm

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 43: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Example: Common-Drain Colpitts

RC1

C2L

Yin

g (V -V )Yo

V2V1

GL

C1

2L gm(V1-V2)YoGL

1

Vb C2

01)(

1

211

11

moinmin

inLin

gYR

YCCjgCjY

CjYGCjYLj

moL

CCC

ggR

G

CCC

)1(1 inLo

inm CC

CC

CCGgRC

CCg 211 2)1(in

in

in CCCCCC

CCCL 12

21

12 inLom CCC

GgRC

g122

2)(

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 44: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillator Simulations1) Small-signal analysis : loop-gain or neg-res method (AC or S-par analysis)1) Small-signal analysis : loop-gain or neg-res method (AC or S-par analysis)

rough estimation for fosc and adequate gain- NOT ACCURATE due to various large-signal phenomena

2) Time-domain analysis (TRAN) Oscillation frequency and amplitude2) Time-domain analysis (TRAN) Oscillation frequency and amplitude• You need a time-varying element for oscillation build-up

(eg. exp. incr. supply, init current in coil)• Use constant time-step• Use high precision settings

.option HMIN=2p HMAX=2p eps=0.1u reltol=1u

Vprobe drain1 drain2 probe• Use high precision settings

- Sweeps toilsome in some simulators- No noise analysis / analysis really heavy

3) Harmonic Balance (SST, ”steady-state” sim.)

Vprobe drain1 drain2 probe

.sst oscil nharm=10 fund_osc=3G

.extract fsst label=taajuus fund_osc

.extract fsst label=Voscpp yval(vm(drain1), fund_osc)

.sstnoise v(drain1) harm (1) dec 10 1k 10e63) Harmonic Balance (SST, ”steady-state” sim.)gives oscillation frequency and amplitudePhase noise analysis

+ Results readily in frequency domain+ Easy to sweep parameters and analyze results

.sstnoise v(drain1) harm (1) dec 10 1k 10e6*.plot sstnoise db(phnoise).extract sstnoise label=N/C@10k yval(db(phnoise), 1e4).extract sstnoise label=N/C@1M yval(db(phnoise), 1e6)

+ Easy to sweep parameters and analyze results- Not available in all softwares, may include flaws- Not a general simulation, you can not simulate everything with SST

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 45: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Remainder: Monolithic CoilsVery important for RF ICs Self-learning assignment

H

Very important for RF ICs Self-learning assignment

i i

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 46: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Remainder: VaractorsInversion-mode PMOS Inversion-mode NMOS

N-well

G

Inversion-mode NMOS

G

N-wellP-type substrate

G

N-type accumulation-MOS

P-type substrate

G

P-type accumulation-MOS

N-wellP-type substrate

G

N-isoP-type substrate

G

P-well

P-type substrate P-type substrate

• Four types are available, inversion-mode are “ordinary” MOSFETs• Quality factor and tuning range (Cmax/Cmin) are competing properties • Quality factor and tuning range (Cmax/Cmin) are competing properties • Typ. Q~50 at 2 GHz and TR~3• Process variation tracks to MOSFET variation

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 47: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Coarse tuning with SC-network• Large VCO tuning range ( high Kvco) is needed to compensate PVT variations.• Large VCO tuning range ( high Kvco) is needed to compensate PVT variations.• High Kvco means that oscillator is noisy, and it also causes problems in PLL design.• How to implement large tuning range with small Kvco ?

switched-capacitor network for coarse tuningswitched-capacitor network for coarse tuning

10

8.5

9

9.5

Freq

tune

7

7.5

8

Freq [GHz]

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 16

6.5

Tuning voltage [V]

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 48: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillator Phase NoiseIntuitive approach : ”noise mixing”Intuitive approach : ”noise mixing”• Oscillator is a nonlinear circuit• oscillation swing is ”internal LO”• noise (int. & ext.) is mixed into carrier

noisen

• noise (int. & ext.) is mixed into carrier• fb-loop performs filtering

Intuitive approach II : ”Frequency modulation”

"LO"

Intuitive approach II : ”Frequency modulation”• Oscillator is a VCO & ICO• noise is modulating the oscillator frequency

VCO ICO

n- n

ttKVAtAtv mmm

VCOmosc )cos()cos(

2cos)( 000

Narrowband FMapproximation

Low phase noiseMinimize nonlinearityMinimize KVCO and other sensitivities

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 49: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Oscillator Phase Noise Consider ideal parallel LCR-type oscillator with noiseless Gneg.neg

There are losses in the resonator and corresponding noise source is

Impedance of the LC-tank

kTGf

in 42

00 )( LjZImpedance of the LC-tank

Tank quality factor

We have

0

02

)( jZ

QGL

LGQ

00

11

1We have

Noise voltage is

0

00

00 2

1

2)(

QGQGZ

20222

214Q

kTRZf

if

v nnNoise voltage is

This is both amplitude and phase noise. Oscillator performs amplitude clipping no amplitude noise. Thus, divide above by two. Also recall

2Qff

RPv sigsig2

Noise-to-carrier ratio is

20

212/QP

kTCNsig

Low phase noiseMaximize Psig and Q

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 50: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Leeson’s Phase Noise Model

-80

-70

-110

-100

-90

-80

C/N[dBc/Hz]

-30 dB/dec

-20 dB/dec

-140

-130

-120

-110 -20 dB/dec

noise floor

cfQP

FkT 1)21(12log10 20L

10 100 1000 10000-140

Frequency [kHz]

sig QP1)

2(1log10L

Heurestical model (based on experiments) • fc is 1/f-noise corner close-in noise f is not the same as device’s 1/f-corner• fc is 1/f-noise corner close-in noise • constant term ”1” is included to describe the noise floor

• F is for additional noise due to –gm

fc is not the same as device’s 1/f-cornerF is difficult to estimate a prioriBased on linear time-invariant model

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 51: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Frequency DividersFrom RF designer’s point of view there are two types of logic: dynamic & static

Static logic (SCL = source-coupled logic) • devices have constant bias (no saturation)

Dynamic logic: • transistors operate as switches

From RF designer’s point of view there are two types of logic: dynamic & static

2

• devices have constant bias (no saturation)• no speed limitation (as with dyn. logic)• power – frequency dependency weaker• differential signals (dyn. logic single-ended)

Better immunity to noise, glitches etc.

• transistors operate as switches• many logic families • on/off switching limited speed • power consumption is related to speed :

CVfP ddDC2 Better immunity to noise, glitches etc.

• speed scales with the technology.• power consumption scales with the technology

There is a frequency limit, set by the limited speed of dynamic logic or increased power consumption, where static logic becomes superior.With 65-nm CMOS this limit is in range of 2-3 GHz, in 28-nm at 5-7 GHz.

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 52: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

SCL D-flipflop divider

• D-flipflop in unity feedback is a divide-by-two circuit • D-flipflop in unity feedback is a divide-by-two circuit • D-flipflop consists of two D-latches

• resistor

Q

• resistor• PMOS• inductor

D-latchD Q

DX QX CLK

D-latchD Q

DX QX CLK

foutD

CLK CLK

DFFfin

CLK

TRACK HOLD

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 53: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Divider ChainsAsynchronous chain • Power consumptionAsynchronous chainDivide by 2N D Q

DFF

QX D Q

DFF

QX D Q

DFF

QX

• Power consumptionlower after each division

• Higher noise (jitter)

Johnson counterDivide by 2N

D Q

DFF

QX D Q

DFF

QX D Q

DFF

QX D Q

DFF

QX • Each DFF runs at fin

higher power cons.• smaller noise (jitter)

modulusDiv-2/3 Div-3/4

Dual-modulusDFF DFF

in

out

DFF DFF

modulus ctrl

Dual-modulusdividers

modulus ctrl

in

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 54: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

IQ Generation

APre-

Channel select

I Four LO signals needed:

0 90

A D

A

Pre-select

LO

I Four LO signals needed:0° / 90° / 180° / 270°

IQ amplitude and phase balance (IRR) very important.A

D Q balance (IRR) very important.

1. RC phase shifters polyphase RC filter2. Divide-by-two circuit3. Quadrature oscillators3. Quadrature oscillators

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 55: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

RC Phase Shiftersvin Ip ( 0 deg) RC-CR networkvin

vinI QQp ( 90 deg)

Im ( 180 deg)

Qm ( 270 deg)

Ip ( 0 deg)

• Narrow bandwidth• Sensitive to process spread• Post-tuning possible• Clipping amplifier helps

RC-CR network

Im ( 180 deg)

constant IQ phase balance constant IQ amplitude balance

• Clipping amplifier helps

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 56: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

RC Phase Shiftersvin Ip ( 0 deg) RC-CR networkvin

vinI QQp ( 90 deg)

Im ( 180 deg)

Qm ( 270 deg)

Ip ( 0 deg)

• Narrow bandwidth• Sensitive to process spread• Post-tuning possible• Clipping amplifier helps

RC-CR network

Im ( 180 deg)

constant IQ phase balance constant IQ amplitude balance

• Clipping amplifier helps

vin Qp

Ip

70

80

90

100

110

Polyphase RC filter

vin Qp

Im

30

40

50

60

70

3-stage

IRR

[dB

]

Qm

0

10

20

30

2-stage

Frequency

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 57: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Divide-by-two IQ Generation• Wide bandwidth

D-latchD Q

DX QX

D-latchD Q

DX QX

• Wide bandwidth• Compact size, easy to design well• IRR limited by latch matching• Requires double-freq signal• Non-perfect input signal:DX QX

CLKDX QX CLK

DFFIN

I Q

• Non-perfect input signal:• Amplitude error => phase error• Phase error attenuates a bit

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 58: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Divide-by-two IQ Generation• Wide bandwidth

D-latchD Q

DX QX

D-latchD Q

DX QX

• Wide bandwidth• Compact size, easy to design well• IRR limited by latch matching• Requires double-freq signal• Non-perfect input signal:DX QX

CLKDX QX CLK

DFFIN

I Q

• Non-perfect input signal:• Amplitude error => phase error• Phase error attenuates a bit

BIAS &POWER CTRL

Q

IX

QX

INI

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 59: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Quadrature Oscillators

Oscillator 2Oscillator 1 0 90 180

270 0 180

0° 90° 180° 270° 0°

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 60: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Quadrature Oscillators

Oscillator 2Oscillator 1 0 90 180

270 0 180

0° 90° 180° 270° 0°

• Quadrature coupling results• Quadrature coupling resultsin increased phase noise

• Large die area

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017

Page 61: ELEC-E3550 Integrated RF circuits Spring 2017 · • Filters are filter banks and/or tunable filters • Amplifiers not drawn Main problem for RF IC implementation: good filters can

Summary

• SX requirements, impact of phase noise, IQ imbalance (IRR)• DAS / DDS / PLL • DAS / DDS / PLL • CP-PLL • ADPLL

• Oscillators: Ring & LC• LC-oscillators: unity feedback / reactive feedback• Phase noise

• Frequency Dividers: dynamic ”CMOS” / static ”SCL”• IQ signal generation: RC polyphase / Div-2 / quadrature osc.

Department of Micro and NanosciencesStadius, Ul Haq

Integrated RF circuitsSpring 2017