ELCT609 Assignment - 1...Microsoft Word - ELCT609 Assignment - 1 Author eman.azab Created Date 4/19/2020 3:01:14 PM

German University in Cairo

Faculty of Information Engineering &

Technology

Department of Electronics Engineering

Dr. Eman Azab

Prepared by: M.Sc. Eng. Beshoy Sabry

Assignment ( 2 )

Grade:

P1: Out of 10 marks

P2: Out of 10 marks

P3: Out of 10 marks

P4: Out of 10 marks

P5: Out of 10 marks

P6: Out of 10 marks

P7: Out of 10 marks

Total: Out of 70 marks

Course ELCT609 – Electronic Circuits for Mechatronics

FULL

Name

First Name Middle Name Last Name

ID —

Tutorial No. T#

Kindly, be informed that assignments that are not delivered in this form (COVER & BODY CREDENTIALS/SHADED PARTS FILLED &

ALL PAGES STAMPED) shall not be accepted; (Such are the rules for your sake & your instructors’.)

German University in Cairo — IET — Department of Electronics Engineering

ELCT609 - Electronic Circuits for Mechatronics - Tutorial Number: T___ - ID:_____—____________

Problem (1):

Consider the common source amplifier shown in Fig.1. Determine the small signal

voltage gain, input resistance and the output resistance Assuming that the transistor has

VT = 1.5 V, K=0.25 mA/V2, VA = 1 / λ = 50V and assuming the coupling capacitors to

be sufficiently large so as can be neglected.

Kindly, be informed that assignments that are not delivered in this form (COVER & BODY CREDENTIALS/SHADED PARTS

FILLED & ALL PAGES STAMPED) shall not be accepted; (Such are the rules for your sake & your instructors’.)

PAGE: #



Problem (2):

In the circuit of Fig.2, Let VCC = (last digit in your ID) V, VS = (First Digit in your ID)

V, RC = (second digit in your ID) kΩ and RS = (Third Digit in your ID) kΩ. The transistor

is characterized by β = 50 and VCE,Sat =0.2 .

Find the value of RB that just results in saturation ( at the edge between active and sat )

if:

(a) The capacitor is present

(b) The capacitor is replaced with a short circuit. Note: if any of the digits described above is Zero, use the digit ‘2’ instead!



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Problem (3):

Design the circuit in Fig.3 to obtain a current of (first two digits in your ID) μA. Find the

value required for R and find the DC voltage VD. Let the NMOS transistor have VT

=0.6V, μn Cox = 200μA/V2, L = 0.8 μm and W = 4 μm.



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Problem (4):

Consider the circuit of Fig.4 which is designed in Problem 3 (to which you should refer

before solving this problem). Let the voltage VD be applied to the gate of another

transistor M2 as shown in Fig.4. Assume that M2 is identical to M1. Find the drain

current and mode of operation of M2.



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Problem (5):

For the shown BJT amplifier,

i) Derive expressions for low frequency poles and Zeroes, then determine fL.

ii) Derive expressions for high frequency poles and determine fH.

iii) Set the value of fL (to be the first two digits in your ID) Hz and Set the value of

fH (to be the last two digits in your ID) kHz, by designing the amplifiers

resistors (Check DC operating point while designing the amplifier)



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Figure 1: Common Base Amplifier



Problem (6):

In Fig. 6 shown, a manufacturing error reduces Rs to zero. Let VDD = 12V, RG1 = 5.6MΩ,

and RG2 = 2.2MΩ. What is the value of VG created? If K is allowed to vary from 220 to

380 μA/V2 and Vt to vary from 1.3 to 2.4 V, what are the extreme values of ID that may

result? What value of Rs should have been used to limit the maximum value of ID to

0.15mA?



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Figure 6: MOSFET Circuit



Problem (7):

For the shown BJT amplifier, derive an expression for the mid-band voltage gain

Vout/Vs, input resistance Rin, and output resistance Rout assuming that C1 = C2 = ∞

and neglecting the Early Effect.



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Figure 7: BJT Amplifier Circuit



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ELCT609 Assignment - 1...Microsoft Word - ELCT609 Assignment - 1 Author eman.azab Created Date 4/19/2020 3:01:14 PM