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Effects of interfacial bonding in the Si-carbon nanotube nanocomposite:A molecular dynamics approach
Byung-Hyun Kim,1,2,a) Kwang-Ryeol Lee,1 Yong-Chae Chung,2 and June Gunn Lee1
1Center for Computational Science, Korea Institute of Science and Technology, Seoul 136-791,South Korea2Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea
(Received 8 May 2012; accepted 20 July 2012; published online 30 August 2012)
We investigated the effects of interfacial bonding on the mechanical properties in the Si-carbon
nanotube (CNT) nanocomposite by a molecular dynamics approach. To describe the system
appropriately, we used a hybrid potential that includes Tersoff, AIREBO (adaptive intermolecular
reactive empirical bond order), and Lennard–Jones potentials. With increasing bonding strength at
the interface of Si matrix and CNT, toughness as well as Young’s modulus and maximum strength
increased steadily. CNT pull-out and load transfer on the strong CNT were identified as the main
mechanisms for the enhanced properties. At optimum bonding, crack tip was deflected around
CNT and the fracture proceeded in plastic mode through Si matrix owing to the strong
reinforcement of CNT, and resulted in a further enhancement of toughness. At maximum bonding,
however, only load transfer is operative and the fracture returned to brittle mode. We concluded
that a strong interface as long as the CNT maintains its structural integrity is desirable to realize the
optimum result. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748133]
I. INTRODUCTION
Carbon nanotube (CNT) due to its exceptional magnetic,
electrical, and mechanical properties is a promising candi-
date for various technical applications ranging from nanoe-
lectronic devices to nanocomposites.1,2 The extremely high
specific strength coming from the intrinsic strength of the
carbon–carbon sp2 bond makes the CNT especially suitable
for high-performance nanocomposites and it is expected that
this mechanical application of CNT could create the biggest
large-scale application for the material. However, it is known
that there are two key issues for improving the mechanical
properties of CNT-reinforced nanocomposites. The interfa-
cial bonding between CNTs and a matrix is crucial as well as
the uniform dispersion of CNTs.3–5 Not like normal fiber-
reinforced nanocomposites, it is very difficult to study CNT-
reinforced nanocomposites experimentally as clearly indi-
cated by rather scattered data reported by various studies.6–9
Difficulties in uniform mixing and in forming of proper
interfacial bonding between matrix and CNT are considered
as the main causes for the inconsistency. A molecular dy-
namics approach, however, can provide an alternative to the
problem and can generate fundamental information such as
stress-strain behavior which is vital to tailor the nanocompo-
sites for a specific use.
Computationally, a rich data base is already available
for various mechanical properties of CNT10–12 and Si.13–15
Computational studies of brittle matrix such as Si reinforced
with CNT, however, is not available in terms of its mechani-
cal properties, such as Young’s modulus, fracture strength,
and toughness. This study is undertaken to evaluate the gen-
eral fracture behavior of nanocomposites using a model of
Si-CNT system. Our result shows that toughness, Young’s
modulus, and maximum strength increased with increasing
bonding strength at the interface of Si matrix and CNT
mainly due to the effective load transfer from the matrix to
CNT. It is expected that the interpretation from this result
could extend to other brittle matrix-CNT systems.
II. COMPUTATIONAL METHODS
We used a simulation model (total 17 081 atoms) shown
in Fig. 1 that consists of Si matrix (54.31� 54.31� 108.62
A3 with 15 961 atoms) reinforced with a single-wall CNT
(dia.; 13.751 A, length; 68.589 A with 28 hexagons of 1120
atoms, armchair type with chirality of (10, 10)). Here, Si was
chosen as a typical brittle matrix. To implement different
interactions and loading conditions, the Si matrix was di-
vided into 5 regions as (a) fixed bottom region, (b) extending
top region, (c) and (d) crack-initiating regions, and (e) main
matrix region. Periodic boundary conditions are applied in
both y- and z-directions that correspond to a plane strain con-
dition. A crack was initiated by preventing interactions
between Si atoms in regions (c) and (d).
We carried out all runs by using the large-scale atomic
molecular massively parallel simulator (LAMMPS) devel-
oped by Sandia National Laboratories16 and calculated
interatomic forces with the use of a hybrid potential that
includes Erhart/Albe-Tersoff potential17 for Si-Si in the Si
matrix, AIREBO (adaptive intermolecular reactive empirical
bond order) Brenner/Stuart potential18 for C-C in the CNT,
and Lennard–Jones (LJ) 6–12 potential19 for Si-C. A time-
step of 1 fs was used in all runs.
The initial equilibrium was established by relaxing the
system for 10 000 steps with the use of Berendsen thermostat
to allow small changes in the velocities of the atoms such
that temperature of the system fluctuates close to 300 K. The
a)Author to whom correspondence should be addressed. Electronic mail:
[email protected]. Tel.: þ82-2-958-5498. Fax: þ82-2-958-5509.
0021-8979/2012/112(4)/044312/4/$30.00 VC 2012 American Institute of Physics112, 044312-1
JOURNAL OF APPLIED PHYSICS 112, 044312 (2012)
computational experiments to model tensile loading of the
Si-CNT system were implemented by keeping one end fixed,
while slowly displacing the other end (0.25 A/ps) in the
z-direction as shown in Fig. 1. This corresponds to the uniax-
ial strain rate used in this simulation, 2� 109/s, which is sev-
eral orders of magnitude higher than in real experimental
conditions due to the fundamental limitation on the time
scale of MD simulations. However, we confirmed that the
strain rate was satisfied to represent the quasi-static loading,
i.e., the total energy difference in a time step is less than
10�5%. The displacement was so controlled that a gradient
toward zero is accomplished throughout the main matrix
((e) in Fig. 1) to the fixed end.
III. RESULTS AND DISCUSSION
Figure 2 summarizes the calculation results of the pres-
ent work: Young’s modulus, maximum strength, and tough-
ness of the Si-CNT nanocomposites with various bonding
strengths between Si and CNT compared with those of pure
Si. It was observed that the calculated mechanical properties,
such as Young’s modulus, maximum strength, and tough-
ness, increased with increasing bonding strength at the inter-
face of Si matrix and CNT.
In all the simulation results throughout this study,
Erhart/Albe-Tersoff potential applied to all Si regions ((a) to
(e) in Fig. 1), while AIREBO potential to the CNT. The me-
chanical properties of pure Si were obtained by performing
the uniaxial tensile test. The calculated Young’s modulus,
maximum strength, and toughness were 100.2, 12.3, and
1.08 GPa, respectively, which are comparable with the ex-
perimental results. The measured Young’s modulus along
the h100i direction by Sato et al. is 120–140 GPa.20 Petersen
reported that the maximum strength of single crystal silicon
FIG. 1. Simulation model that consists
of Si matrix reinforced with a single-
wall CNT.
FIG. 2. Young’s modulus, maximum strength, and toughness of the Si-CNT
nanocomposites with various bonding strengths at the interface between Si
and CNT compared with those of pure Si.
FIG. 3. Snapshots for (a) 10.5%, (b) 21%, and (c) 31.5% strain with maxi-
mum bonding, i.e., Erhart/Albe-Tersoff potential for Si-C bonds.
044312-2 Kim et al. J. Appl. Phys. 112, 044312 (2012)
was 6.9 GPa.21 A fully bonded case as shown in Fig. 3 was
first simulated by allowing a full interaction between Si
atoms and CNT at the interface described by Erhart/Albe-
Tersoff potential for Si–C bonds. Note that considerable
defects formed on CNT after the relaxation due to strong
interfacial interaction although the general feature of CNT
structure was maintained. Here, crack propagated in brittle
mode through both Si and CNT and the fracture of CNT took
place at the strain range of 13% to 18%. The calculated
Young’s modulus and maximum strength were 478.9 and
53 GPa, respectively, which are close to those for single
crystalline SiC.21 The average distance of Si–C bonding at
the interface was 1.98 A roughly which corresponds to that
of the crystalline SiC.
Cases for various interfacial bonds were empirically and
conveniently described by LJ potential by varying epsilon
value, which is the energy at the equilibrium state, at a fixed
sigma value, the zero-crossing distance, of 1.2 A in order to
investigate the effect of interfacial bonding on the mechanical
properties of the Si-CNT nanocomposites as shown in Figs. 4
and 5. We assumed that the higher epsilon value indicates the
more improved interfacial bonding between the surface of
CNT and Si matrix. Here, CNTs were found to be well pre-
served structural integrity and the hexagonal lattice remained
intact up to strains at the macroscopic failure although radial
breathing and tangential stretching are evident.
In the weakest bonding case (epsilon¼ 0.01 eV), CNT
did not contribute to improving the mechanical properties of
Si-CNT nanocomposite but acted as a void resulting in pure
Si fracture in brittle mode. With increasing bonding strength
(epsilon¼ 0.10 to 0.50), significant amounts of load transfer
across the Si-CNT interface and CNT pullout (note the steps
on the stress–strain curves in Fig. 6) were activated. Espe-
cially at the optimum interfacial bonding as shown in Fig. 5,
crack tip was deflected around CNT and the fracture pro-
ceeded in plastic mode through Si matrix. This is attributed to
the strong load-bearing by CNT allowing only energetically
FIG. 4. Snapshots for (a) 10.5%, (b) 21%, and (c) 31.5% strain with
epsilon¼ 0.01 eV.
FIG. 5. Snapshots for (a) 10.5%, (b) 21%, (c) 31.5%, (d) 42% strain with
epsilon¼ 0.5 eV.
FIG. 6. Stress–strain curves of the Si-CNT nanocomposites with various
interfacial bonding strengths.
044312-3 Kim et al. J. Appl. Phys. 112, 044312 (2012)
less intensive slips along (111) plane in the Si matrix, and
resulted in a further enhancement of toughness as shown as
stress extensions after peak stresses in Fig. 6.
The resulting stress–strain curves of the Si-CNT sys-
tems with various interfacial bonding strengths are shown
in Fig. 6 with the curve from the pure silicon case for
comparison. Note that, with increasing bonding strength at
the interface of Si matrix and CNT, toughness as well as
Young’s modulus and maximum strength increased stead-
ily. Figure 7 shows the load transfer efficiency that indi-
cates the external stress transferred to the embedded CNT
from the matrix by calculating the stress level of CNTs af-
ter 0.05 strain. For the weakest bonding case, the stress of
CNT was obtained as 0.15 GPa, which means that there is
no significant effect of load transfer from the matrix to
CNT resulting in a brittle fracture. However, the stress of
CNT significantly increased with increasing the interfacial
bonding strength between CNT and the matrix. Therefore,
CNT pull-out and load transfer on the strong CNT were
identified as the main mechanism for the improved proper-
ties. Note that the calculated failure stresses and maximum
strains are comparable with the values obtained from
experimental works of CNTs; failure stresses between 13
and 52 GPa and maximum strains between 10% and
13%.22
It is clear that good interfacial bonding as long as the
CNT maintains its structural integrity is required to achieve
a maximum enhancement for the mechanical properties of
Si or other brittle matrix-CNT nanocomposites. This also
implies that there is a wide range of improvement needed in
processing considering the less satisfactory enhancement of
mechanical properties in experimental works, for example,
as reported by Gao et al. for systems of ceramics and
CNT.23
IV. CONCLUSIONS
A molecular dynamics approach with a hybrid potential
properly described the effects of interfacial bonding in the Si-
CNT nanocomposites. We observed that the mechanical prop-
erties such as Young’s modulus, maximum strength, and
toughness increased steadily with increasing bonding strength
at the interface of Si matrix and CNT. It is worth noting that
CNT pull-out and load transfer on the strong CNT were iden-
tified as the main mechanism for the improved mechanical
properties. At maximum bonding, however, only load transfer
is operative and the fracture returned to brittle mode. At opti-
mum bonding, crack tip was deflected around CNT and the
fracture proceeded in plastic mode through Si matrix due to
the strong support by CNT, and resulted in a further enhance-
ment of toughness. We suggest that a strong interface as long
as the CNT maintains its structural integrity is desirable to re-
alize the optimum result.
ACKNOWLEDGMENTS
The present research was financially supported by the
Converging Research Center Program through the Ministry
of Education, Science and Technology (2011K000624).
1R. H. Baughman, A. A. Zakhidov, and W. A. Heer, Science 297, 787 (2002).2P. M. Ajayan and J. M. Tour, Nature 447, 1066 (2007).3K. T. Kim, S. I. Cha, T. Gemming, J. Eckert, and S. H. Hong, Small 4(11),
1936 (2008).4S. I. Cha, K. T. Kim, S. N. Arshad, C. B. Mo, and S. H. Hong, Adv. Mater.
17, 1377 (2005).5H. Kwon, M. Estili, E. Takagi, T. Miyazaki, and A. Kawasaki, Carbon 47,
570 (2009).6D. Jiang, K. Thomson, J. D. Kuntz, J. W. Ager, and A. K. Mukherjee, Scr.
Mater. 56, 959 (2007).7K. E. Thomson, D. Jiang, R. O. Ritchie, and A. K. Mukherjee, Appl. Phys.
A 89, 651 (2007).8N. P. Padture and W. A. Curtin, Scr. Mater. 58, 989 (2008).9D. Jiang and A. K. Mukherjee, Scr. Mater. 58, 991 (2008).
10K. Talukdar and A. K. Mitra, “Molecular dynamics simulation study on
the mechanical properties and fracture behavior of single-wall carbon
nanotubes,” in Carbon Nanotubes—Synthesis, Characterization, Applica-tions, edited by S. Yellampalli (Intech, 2011), Chap. 15.
11Z. Yao, C.-C. Zhu, M. Cheng, and J. Liu, Comput. Mater. Sci. 22, 180
(2001).12K. M. Liew, X. Q. He, and C. H. Wong, Acta Mater. 52, 2521 (2004).13J. Tersoff, Phys. Rev. B 38, 9902 (1988).14C. Z. Wang, C. T. Chan, and K. M. Ho, Phys. Rev. B 39, 8586 (1989).15M. Timonova and B. J. Thijsse, Modell. Simul. Mater. Sci. Eng. 19,
015003 (2011).16S. Plimpton, J. Comput. Phys. 117, 1 (1995).17P. Erhart and K. Albe, Phys. Rev. B 71, 035211 (2005).18S. J. Stuart, A. B. Tutein, and J. A. Harrison, J. Chem. Phys. 112, 6472 (2000).19J. E. Jones, Proc. R. Soc. London, Ser. A 106, 463 (1924).20K. Sato, T. Yoshioka, T. Ando, M. Shikida, and T. Kawabata, Sens. Actua-
tors, A 70, 148 (1998).21K. E. Petersen, Proc. IEEE. 70, 420 (1982).22M.-F. Yu, B. S. Files, S. Arepalli, and R. S. Rouoff, Phys. Rev. Lett. 84,
5552 (2000).23L. Gao, L. Jiang, and J. Sun, J. Electroceram. 17, 51 (2006).
FIG. 7. Calculated stress levels of CNT which is indicative of the external
stresses transferred to the embedded CNT for the Si-CNT nanocomposites
after 0.05 strain.
044312-4 Kim et al. J. Appl. Phys. 112, 044312 (2012)