EETimes July-August 2012

7/29/2019 EETimes July-August 2012

1/56

July/August 2012

Special ocus:Medical Electronics

Special ocus:Programmable Logic

europeanusiness press www.electronics-eetimes.com

Defning the building blocks

o tomorrows photonics

FREESHIPPING

ON ORDERSOVER 65!

DIGIKEY.COM/EUROPE


2/56


3/56

Designing a MEMS driver ASIC for a novel

contact lens sensor

Medical applications often

have particular needs for ultra-low power consumption, high

integration, small size and

novel powering techniques.

Choosing the right EMS partner

for medical applications

Q&A with Kontron: The trends in the medical

embedded market

- PROGRAMMABLE LOGIC

Developing a 200Gbit/s line

card with 22nm FPGAs

Two key developments are

shaking up the FPGA world:

the advent of 22nm program-

mable devices and the avail-

ability of devices strongly targeted towards specific

markets through the use of hardened IP.

Expanding system control with PLDs and low

overhead serial buses

OpenCL emerges for FPGA high level design

In the debate about high-level design, a new stan-

dard is emergingfor FPGA designers

to use alongside

VHDL, Verilog and

System C to bridge

the gap.

ReadeR offeR

This month, Elliptec is offering

EETimes Europes readers the

chance to win an advanced

evaluation kit worth 999 Euros

for its high precision rotatory

and linear positioning devices.

distRibution coRneR

WHite PaPeRs

A leading reference resource for electronics engineers,

EE Times Europes White Paper library includes over

600 white papers, application notes, technical articles,

books and case studies, all downloadable free of charge

oPinion

Uncommon Market: Four reasons why its game

over for foreign chip firms in China

Last Word: New EU Data Directive will drive turning

point for security

neWs & tecHnoLoGY

Nanosys teams with 3M film

to yield less-costly LCDs

Cubic silicon carbide could

be twice as good as silicon

for solar cells

A peek at innovation from Minalogic

Displayport and HDMI in battle

for mobile link dominance

On the photonics roadmap: chip-to-chip and

intra-chip interconnects

The CEA-LETI annual

review that took place

late June was an oppor-

tunity to catch up with

the state-of-the-art in

photonics.

In the crystal ball: fast networks for smart

manufacturing lines

desiGn & PRoducts

SPECIAL FOCUS:

- POWER SUPPLIES

No magnetics required - charge pumps

can handle the Volts!

Comparing uninterruptible power supply topologies

- MEDICAL ELECTRONICS

Wafer-scale CMOS X-ray

imaging for medical applications

There is an increasing inter-

est in the use of solid-state

based X-ray medical imaging

and detection systems in the

replacement of conventional

diagnostic imaging techniques.

One of these technologies is wafer-scale CMOS-

sensor based imaging.

Ultra-low power radio drives continuous medical

monitoring with low-cost batteries

CONTENTS July/auguST 2012

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4/564 Electronic Engineering Times Europe July/August 2012 www.electronics-eetimes.com

UNCOMMON MARKET

Four reasons why its game over

or oreign chip frms in ChinaBy Jk Yh

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Chip makers must survive on lower gross

margins to compete in China


5/56www.electronics-eetimes.com Electronic Engineering Times Europe July/August 2012 5

MATERIAL SCIENCES

Nanosys teams with 3M flm

to yield less-costly LCDsBy Nicolas Mokho

Nanosys and the Optical Systems Division of 3M are collabo-

rating to commercialize Nanosys Quantum Dot Enhancement

Film color LCD technology, which could result

in delivering OLED performance to LCDs, at

a fraction of the cost and with better energy

eciency. 3M and Nanosys will work together

to commercialize Nanosys QDEF technology,

a drop-in lm that LCD manufacturers can

integrate with existing production processes. It

utilizes the light emitting properties of quantum

dots to create a backlight for LCDs.

Combining the world class-technology and materials exper-

tise of Nanosys with the engineering, design and supply chain

capabilities of 3M will unlock a powerful new color viewing

experience for consumers, said Jim Bauman, Vice President

of the Optical Systems Division at 3M, here at the Society for

Information Display venue. Current LCDs are limited to display-

ing 35 percent or less of the visible color spectrum.

We are working together to improve an area of display per-

formance that has been largely neglected for the last decade,

said Jason Hartlove, President and CEO of Nanosys. Working

together with 3M and utilizing their outstand-

ing design and supply chain capabilities will

allow our QDEF technology to be widely

deployed across all product segments and

will ensure availability to all customers.

A quantum dot emits light at a very

precise wavelength. The ability to control

the spectral output of a quantum dot allows

QDEF to create an ideal white backlight

specically designed for LCDs. Trillions of these quantum dots

are packaged into a thin lm that ts inside an LCD backlight

unit. QDEF replaces a similar lm already found inside LCD

backlights, which means that adding QDEF to manufactur-

ing processes requires no new equipment or process changes

for the LCD manufacturer. The Society of Information Display

awarded Nanosys with the 2012 Display Industry Awards Gold

Display Component of the Year for its QDEF.

Cubic silicon carbide could be twiceas good as silicon or solar cellsBy Julien Happich

According to Swedish researchers at the Linkping

University, cubic silicon carbide may be capable of collecting

more than twice the solar energy than silicon based solar cells.

The cubic silicon carbide is considered a perfect material for

impurity (intermediate bandgap) solar cell. For

boron doped cubic SiC, the dopant band of B in

the bandgap of 3CSiC leads to an ecient use

of sun light so that an eciency up to 4860%

could be achieved depending on theoretical

models. But so far, cubic silicon carbide has

shown to be the black sheep of the silicon

carbide family, explains Mikael Syvjrvi, associ-

ate professor at the Linkping University. While

hexagonal silicon carbide types have been com-

mercialized for many years, cubic silicon carbide

has faced too many challenges, such as being

metastable, meaning that it does not really want

to form. One has to decrease the growth temperature to make

it form, but at the same time the growth rate is decreased. The

common approach is to use silicon as substrate, but the latticeand thermal mismatch causes defects and stress.

The Swedish researchers have applied a bulk growth ap-

proach like used in production of hexagonal silicon carbide.

According to Syvjrvi, the trick is to lower the growth tem-

perature while adjusting other parameters to maintain a high

growth rate, at 1mm/hour. The group applies hexagonal silicon

carbide as substrate, and the material is transformed to the

cubic structure during initial stage of growth. The advantage of

using hexagonal substrate is the perfect matching. Structural

measurements have showed a similar quality

like in hexagonal commercial material. The key

parameter in showing o the quality is the carrier

lifetime. Previously this had a lifetime of about

0.1 s, while the new record value is 8.2s in as

grown material, an increase of almost two orders

of magnitude. In comparison, this is even slightly

better than that in hexagonal silicon carbide.

Todays silicon solar cells have an eciency

of 20%. In order to increase the eciency of so-

lar cells, multi-junction (thin lm) solar cells with

dierent bandgaps is one of the most promising

approaches. The best eciency of such solar

cells demonstrated on the research scale is 43.5%. However,

the challenges in fabrication of multi-junction solar cells lie in

the growth of multistacked material and balance of junctioncurrents. Cubic silicon carbide in a single material which is

doped during growth, having a high growth rate such as 1 mm/

hour, could pave the way for more ecient solar cell concepts.

These results on the growth of cubic silicon carbide were pub-

lished in the Applied Physics Letter of June 18.

Cubic silicon carbide grown on

hexagonal silicon carbide.



NEWS & TECHNOLOGY INNOVATION CLUSTER

A peek at innovation from Minalogic

By Jul HppchCreated in 2005 o bcom globl comp-

v clus h Gobl go (Fc),

Mlogc - www.mlogc.og - ghs ov

200 members all beneting from the clusters

collaborative projects in the eld of micro-

technology and embedded software. EETimes

Europe was invited to take a peek at some of the

clusters recent projects, mature enough to nd

commcl pplcos.

Among several demos set up for the day,

CyXplus was exhibiting its breakthrough X-ray

tomography solution, developed as part of

Minalogics Delpix project. CyXplus was spun o

the Cybernetix Group in 2009 and as its technical

director Olivier Franois explained us, it is only

through the combination of faster X-ray sensors,

custom data transfer protocols and improved

mg cosuco lgohms h h com-

pany was able to deliver production-line capable

3d-mgg.

The company uses new software and a special

data transfer protocol to yield a synchronized,

l-m 3d mg cosuco s h X-y

scans are being acquired, eectively transferring

data directly for volume reconstruction, cross-

section by cross-section with no data storagedelays. With this approach, CyXplus claims a 20x

speed improvement over previous generation 3D

X-ray scanners. This means that a production

part that would take several minutes to inspect

can now be fully reconstructed and analysed

in only a few seconds. In the past, because it was taking too

long to reconstruct the object in 3D, manufacturers would only

use X-ray tomography to characterize and validate a production

process, based on one successful part. Now, each part on the

production line can be scanned and fully inspected internally,

with automated quality inspection and defect detection com-

mented Franois. This also means that a complete 3D digital

proof of every produced part can be kept for future reference. In

case of insurance claims, a manufacturer could prove that a part

was shipped defect-free he added. The 3D image resolution is in

h 0.1mm g.

Delivering a spectrum analysis with a resolution of

10pm over a wide portion of the visible and NIR range,

from 630 to 1100nm, Resolution Spectra Systems

claims that its SWIFTS (Stationary Wave Integrated

Fourier Transform Spectrometer) is 100 times more

powerful than existing mini-spectrometers and 2,000

times smaller than high-end spectrometers or mono-

chromators oering a similar level of performance.

Combining integrated optics, nanotechnology, micro-

electronics and embedded software, the new instru-

ment is described by Etienne Le Coarer, technicaldirector of the Institute of Planetology and Astro-

physics of Grenoble (IPAG), as an ultra-compact

static Fourier Transform Spectrometer (FTS) that can

operate over a wide wavelength range. The SWIFTS

is capable of measuring wideband spectra or multi-

l soucs, mul-l bsopo, o

can be used in laser spectroscopy with

one or more laser sources for materi-

als analysis. In his research, Le Coarer

presented several papers on the use of

gold nanowires to probe a Lippmann

interferogram within a waveguide, ef-

fectively relying on near-eld detection to

sample the evanescent standing wave in

the waveguide. The researcher was able

to demonstrate that small gold wires

deposited along the waveguide surface

can both scatter the light and sample the

interferogram, allowing its detection by a

simple CCD sensor. In 2007, the proof of

concept was obtained with a waveguide

about 0.5mm long. In further research

not made public, the aim was to replace

the gold nanowires with specially

designed detectors set every quarter of

the standing wavelength to enlarge the

spectral bandwidth of the fully inte-

grated spectrometer. Resolution Spectra

Systems now has two products on oer

(shown in gure 2), the linear Zoom

Spectra and the rectangular shaped Ma-trix Zoom. The Zoom Spectra uses the

same demonstrated FTS principle but on

a 30mm-long waveguide, whereas the

rectangular shaped Matrix Zoom com-

bines 256 Zoom Spectra waveguides

cleverly arranged side by side to augment the spectrometers

overall spectral bandwidth. Such micro-spectrometers could nd

use in space-borne spectrometry, chemical sensors and parallel

spectral imaging to name a few applications.

Intriguing transparent sapphire wafers were on display at the

Arnano booth. Directly inspired by the microform process, each

200mm wafer can store up to 10,000 pages of A4 documents,

micro-etched from a layer of titanium nitride (TiN) cast between

two atomically sealed plates of synthetic sapphire. So why would

you convert your digital data into analogue frames physically

etched onto an optical substrate? For durability and reliability,

Fig. 1: CyXplus offers production-

line capable 3D X-ray tomographyfor production part inspection and

numerical archiving.

Fig. 2: A SWIFT unit, the 30mm-long Zoom

Spectra waveguide and the rectangular

shaped Matrix Zoom spectrometer from

Resolution Spectra Systems.

Fig. 3: Under the project Nanoform, Arnano high density analog storage

consists of 200mm atomically sealed glass or sapphire wafers enclosing

micro-etched data. The Nanoviewer optical scanner eases data retrieval in a

numerical format.


7/56

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NEWS & TECHNOLOGY

Displayport and HDMI in battle

for mobile link dominanceBy Rick Merritt

A NEW BATTLE has broken out over how to bring high denition

video to mobile devices. The Video Electronics Standards Asso-

ciation (VESA) formally announced Mobility DisplayPort (MyDP)

today, a new competitor for Silicon Images MHL high-denition

video interconnect. Analogix has discrete chips for the spec,

STMicroelectronics is said to be planning them and vendors of

mobile applications processors are expected to integrate the

technology in future SoCs. MyDP is based on DisplayPort 1.2,

a 5.4 Gbit/s max link now used in a wide range of products to

support up to 1920x1080-progressive resolution video at 60 Hz

with 24 bit color. It also supports the 1.1a version at 2.7 Gbits/s

that delivers 720p video.

The link supports power so phones can charge while sending

video. It uses the existing micro USB connectors on handsets.Analogix has developed a discrete bridge chip supporting

MyDP and linking to HDMI interfaces in existing mobile apps

processors. It delivers 1080p video while consuming less than

300 milliwatts for both the transmitter and bridge and adds less

than two dollars to the bill of materials, said Andre Bouwer, vice

president of marketing at Analogix.

Bouwer expects MyDP will nd its way into handsets, TVs,

notebooks and - using a Mbit/s sideband channel - links to

keyboards and mice as handsets become used as mobile PC

replacements in the next several years. It also supports audio

and stereo 3-D for 1080p at 30 Hz per eye as well as adapters

to connect to existing DVI and VGA interfaces.

VESA created an online video demonstrating MyDP at the

Consumer Electronics Show. The new link arrives at a time

when Silicon Image claims its MHL, a mobile variant of HDMI,

is already enabled in 50 million devices including handsets from

more than a dozen vendors including HTC, LG and Samsung

and TVs from LG, Samsung, Sharp and Toshiba. The MHL

group which includes chip makers such as Mediatek, Mstar,Texas Instruments and Qualcomm expects more than 100 mil-

lion MHL-enabled devices will ship this year.

In May, Silicon Image announced MHL 2.0 supporting full

1080p video at 60Hz at as little as 30mWatts. The new link also

supports power and micro USB connectors.

answers Anarnos Director Alain Rey,

explaining that very important documents

like nuclear site information or strategic

defence archives, but also civil or land

registers for administrations, cannotsafely be left to the evasive and unreliable

realm of digital storage. Ever since we

have entered the digital age, digital le

formats keep evolving rapidly and current

digital storage solutions still require their

content to be regularly refreshed, either

transferred to a new support or converted

into new formats so they can still be read

by current PCs. All this implies recurring

costs just to keep that data accessible

and readable.

Reys argument is that no current

digital data storage solution is guaranteed beyond 5 to 10 years,

and important territorial or administrative documents that need

to be stored reliably and accessed by several generations of

administrators should not be put at risk of loss by lack of funds or

by data format obsolescence. Currently, it costs administrations

between 10 and 50 Euro cents per page to store documents on

microforms estimates Rey. These documents must be stored

at controlled humidity and temperature levels to ensure century-

long data conservation. Yet, that type of archiving is not immune

to re incidents, ooding, excessive light or even pests. If you

look at the total cost of ownership, our solution costs from 35

cents to 1 euros per archived page, but then, there are no recur-

ring costs explains Rey. Once archived, you dont need to wor-

ry about your documents accessibility or preservation. Impos-

sible to counterfeit, scratch-resistant and maintenance-free, thepremium sapphire solution can withstand up to 1200C and will

last several millennia. Reading can be done with any magnifying

opcl ools, o usg h novw,

optical scanner that eases data retrieval

in a numerical format.

The NOMAD (Navigation on Mobile

Objects and 3D Access) project, leadmainly by the Myriad Group on ST-Eric-

ssons hardware together with Moveas

MEMS sensor fusion algorithm solu-

tions, is about enabling richer and more

intuitive user interfaces for mobile users

to navigate content in 3D. The four-year

collaborative R&D project yielded new

hum-mch co chqus

for future smartphones or tablets,

adapted to more complex usages and

sophisticated applications. The deliver-

ables include an Interaction software

toolbox that allows the creation of innovative user interfaces with

integrated 2D and 3D graphics rendering. It is not just buttons,

but even dynamic text and contextual menus can be rendered

in 3D, oering a richer interface than the traditional window,

icon, menu and pointing-device interfaces. A motion software

toolbox was developed to uses motion sensors (accelerometers,

magnetometers, gyroscopes) for implementing new in-air cur-

sor control and gesture-based media content navigation. This

was complemented by a new hardware and software platform

(Linux & Android) and the Snowball development kit (jointly

launched by Calao Systems and ST-Ericsson) accompanied by

h igloo op- souc wb commuy - www.gloocommuy.

org. The Myriad Group developed demonstration systems for

using smartphones and tablets as home remote controls, and for

the 3D visualization of Twitter message streams. CEA-Leti andMovea established a joint lab where they continue to co-develop

low-cost, energy ecient motion-sensor applications.

Fig. 4: Myriad enables service providers to offer

an immersive, customizable and contextualized

user experience with 3D dynamic updates from

social-networks or news streams.


9/56

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NEWS & TECHNOLOGY CEA-LETI ANNUAL REVIEW

On the photonics roadmap: chip-to-chip

and intra-chip interconnectsBy J Hpph

tHe cea-leti annual review h ook p J s

oppoy o h p h h s-of-h- mosys-

ms d moos. amog h my s g

p, my b s h ho foo ssso o

photonics would ll-up my curiosity on the topic.

The dierent presenters all acknowledged that copper alone

would not suce to match the speed and data density required

by f gos of osm ds, h d sms

xpd h tFlOPS g (1000 Gg Fog Op-

os p Sod). th g s h h f of hgh-

bandwidth chip interconnection lays in photonics, at dierent

ompo s.

D. H. Yok fom Shko e idss dsosd

op oo poym gd gd o h

PcB yo of m-hp mods. H h pkg od

so s h op y, h gd mos g h

sg fom mod vcSels (-y sf-mg

lasers) or transmitting it to photodiode arrays see gure 1. The

ompy sd sm mod o 10Gbps h

sg dgdo h gd, sd Yok. a -

mod s so sd o 10Gbps/h. Shko e

idss hs so pooypd 10m2 d op

m-hp mod bg s op hs h hgd y bd o h PcB boh d d

ps o bypss h ds mog pos. ths

m s y podo hs h ompy o-

s fomo bo h x go of pkgs d s

k h op oo dsy pys.

Kos ceO & Psd, J-os Mg, psd

gh dso mpxg (wDM) ppoh o op

os. ady ogzd pod of so opo-

o gd s, h ompy s shppg b

op os (vOas) d wDMs sppog 100Gb/s (4

ghs x25Gb/s). Kos hoogy pfom sppos

ip-chip bonding of lasers for transceivers and its WDM solu-

os sb, mg hy od h 40 ghs

x25Gb/s to enable data transfers of 1 Terabit on a single ber,

bosd Mg. ry, h ompy hs dmosd

wDM msg oy 16x11.5mm, h gd

Gmm-bsd dos oy 3mm d dy opd

o h so gds hogh pd so. i hs so

dopd G phoodods d mo-s modos o

b mbddd o h so ds h h mpxs d

gds hd. Fo hp o hp op os,

Mg poposd sg soo, y ops

that could be used in 3D module architectures see gure 2.

th y ops oss of pd mod sfom,

gg, d hd gds h md by mo

ops.

Dr. Bert-Jan Orein, manager of photonics at IBMsZh rsh lb s so popo of so phoos

fo op os ompg ppos. aodg

to Orein, we must move the optical link deeper inside the pro-

ssg h o s h ommo bddh

s of ompg sysms, fom -k, o bkp, o

cards and ultimately into chips see gure 3. Currently, optical

oos mosy sd h bods dg. Mog h

optical signal chain deeper means additional assembly eortsare required by the many optical components (transceivers) and

hgh-pso ssmby sps h h by d os

sss h go h hm. H, phoos hps od omb

the modulators, drivers, detectors, ampliers, WDM lters and

cMOS os o o d. thogh, h hp- ssmby

Fig. 1: A package acting as the optical layer, with integrated

mirrors receiving or transmitting the signal from mounted

VCSELs and photodiode arrays.

Fig. 2: Interlayer couplers consisting of a tapered modetransformer, a grating, and etched waveguides each

terminated by mirror couplers.

Fig. 3: Moving the optical link deeper inside the processing chain.

Fig. 4: Integrated electrical and optical interconnects on the

chip carrier and the board.


11/56

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NEWS & TECHNOLOGY

of so phoos ds s o y b d odys phoo-

s soos d o b pkgd o s hosg fo

ssmby o bods.

O iBMs odmp s h ssmby of so phoos

hps o h posso pkg, dy x o h possohp. ths ppoh od pod mh hgh bddh

dsy h smpfyg h ssmby poss. th soo o

o h op sgs od b o bd h hp-

fos (cMOS og d S phoos) h gd

d op os (boh o h hp d

the board as shown in gure 4). This integration would allow

o-sp mg of d op oos. ths

so ms h d bod- gds ms b

mbddd o h sbss o dsb h op sgs.

th FP7 poj FireFlY sd h d of s y gos

o h do, ookg 3D o-sd ms d

components for the ecient guiding of light. IBM has already

dmosd -hgh dsy (62.5mm h ph) -

gds o op of PcBs d op opgs b poy-

m gds d so phoos hogh h s of 45

mos d o oss (0.4dB) ss h good ssmby

os (20mm gm fo 1dB ddo oss d

100mm s-o-s ds o fo 1dB ddo oss).

Further in the future, Orein would like to see a photonics layer

sg o op of skd mmoy d og ds, g s

o-hp op ok pb of og os os

but also able to route the data trac.

i hs pso o 3D go d so phoos,

hd of dsg pogms d sh do cea-l D.

ahmd Jy mphszd h h 3D os

increase bandwidth in a single chip, o-chip I/Os will soon be

h bok, g fo hp-o-hp b so o-hp (sobod) S-phoos o h s. ths od o h d

sfs h 1tFlOP/s g pb po s.

Data transfer density and energy eciency in Watts consumed

p GFlOPs ms b sd by s fo of 50 f

o h h obj of 1tFlOP/w by 2016, sd J-

y. whs os h i/O dsy m,

silicon photonics could still be ecient for distances less than

f ms s ommoy fod o Socs, xpd h

sh. ths od b hd hogh h s of g

dob-sdd phoos poss pb of og

mp ds. Sh poss od b dopd dp-

dy (s fo mmos d possos) d shod b d

by ic dsg o mms oss d po osmpo s

gure 5.

Maurizio Zuada, the spokesperson for STMicroelectronics

sh o h op, dsbd S phoos s fdm-

hoogy o h ompys poss odmp. i f,

pshp h lx, St hs dy sd dopm

of its rst generation of photonics devices on 300mm Si wafers.

The rst results are expected for mid-Q4 of 2012 with full

characterization before the end of the year. Zuada also hinted

hybd soo h phoos d kg h i/Os o og

hogh opp ps f opo- sg oso

see gure 6. The rst generation devices will target 25Gbps/link

h bddhs o 100Gbps o hps sm h 160mm3.

Hd of h cMOS Phoos lb cea-l, Sy

Mzo dsssd h d fo go of boh pss d op fos, dg gh msso sh s s

sos d e/O o O/e oso hogh modos d

phoodos. ths s omfod by h og fom

h leti so pfom, J-M Fd ho d h

os bdg boks of h od b omoos phoo-

s s fd d hzd h b. to so h hpo ss, Fd poposd d f go

hby phoos iP f od b bodd o -

o SOi f, mg g h sh 3D op g-

tion would not depend on the specic node used to produce

the electronic wafer see gure 7.

Fig. 5: Large double-sided photonics interposers capable of

interconnecting multiple dies.

Fig. 6: A photonics die linking to logic through copper pillars

after opto-electrical signal conversion.

Fig. 7: In direct wafer bonding, InP dies are bonded on a

CMOS wafer before substrate removal.

CEA-LETI ANNUAL REVIEW


13/56

SPOTLIGHT

Its the never-ending dilemma:trying tokeep your equipment costs as low as possible in

the short term, knowing that your next generation

o designs will probably require aster and more-

advanced test and measurement capabilities.

Deciding how much to buy andwhen to upgrade

Oscilloscopes, or instance, present a airly linear

tradeo between price and bandwidth, a key

perormance specifcation. More bandwidth is great

to have, but budget pressures oten limit you to

buying only as much as you need or your immediate

projects.

In addition to the price/perormance question, its

vital to have a clear understanding o how much

bandwidth your currentand utureapplications

really require.

As an example, lets say your last embedded designused DDR1 memory (which clocks data into and out

o memory on both the rising and alling edges o the

clock signal) with data transer rates in 200 Mbps

range. I you used a scope with 500 MHz bandwidth

to capture and veriy critical timing parameters, this

instrument probably oered sufcient measurement

accuracy.

However, your next design will be based on higher

speed DDR2 technology. Will that 500 MHz band-

width still do the job?

The eye diagram, which provides a composite pictureo signal quality by overlaying high and low bits to

determine when data is valid, is a common measure-

ment perormed on read and write data signals o

DDR memory.

Figure 1shows an example o an eye-diagram

measurement using a 500 MHz scope on a

data signal representative o DDR2-667 memory.

While the clocking rate o DDR2-667 memory is

667 MHz, both the clock signal and the maximum

toggle rate o the data signal are only 333 MHz.

One might assume, then, that a 500 MHz scope

would provide sufcient bandwidth to capture andmeasure these signals.

But as you can see in Figure 1, a 500 MHz scope

essentially turns your digital bit stream into what

appears to be an overlay o sinusoids, obscuring vital

signal details. Clearly, a bandwidth o only 500 MHz

cant capture and measure these signals accurately.

Figure 2, made on the same signal with a 1 GHz

scope, gives a much more realistic representation o

the bit stream, thereby accelerating your search or

the insights you need.

Moving up without starting over

The Agilent InfniiVision 3000 X-Series oscilloscopes

are built on the premise that you need to man-

age your budgets careully today and anticipate

perormance requirements on uture projects, too.

The newest 1 GHz model starts at the lowest price in

the industry. And i you plan to buy or already own a

lower bandwidth 3000 X-Series scope, your invest-

ment is protectedthey are all ully upgradable to

the new 1 GHz level. Buy as much perormance asyou need or todays designs, then easily upgrade to

meet tomorrows requirements.

To learn more about how to identiy the necessary

bandwidth or your specifc measurement

applications, visit

www.agilent.com/fnd/evaluatingbandwidth

and download Evaluating Oscilloscope

Bandwidths for your Application.

Can You Meet Todays

Budget Requirements

While Anticipating Tomorrows

Bandwidth Requirements?

Figure 1

A 500 MHz scope proves inadequate or

this DDR2-667 signal; the eye diagram

presents what appears to be an overlay

o sinusoids but should really be a digital

bit stream.

Figure 2

Heres that same DDR2-667 signal

measured with a 1 GHz scope; the eye

diagram now clearly displays the overlaid

digital bit stream.

InfniiVision 3000 X-Series

oscilloscopes

New! 100 MHz to 1 GHz bandwidth, up to4 Mpts memory, DSO and MSO models

8.5-inch WVGA display is 50% largerand 3x the resolution o competitive scopes

Hardware-based measurement applications including serial decode

Up to 1,000,000 waveorm updates/second with MegaZoom technology

Fully upgradablebandwidth, MSO, memory up to 4 Mpts, measurementapplications, WaveGen built-in 20 MHz unction and arbitrary waveormgenerator, and integrated digital voltmeter

Get a quick quote today at

www.agilent.com/find/quick-quote



NEWS & TECHNOLOGY IEEE TECHNOLOGY TIME MACHINE

In the crystal ball: fast networks for smart

manufacturing linesBy Chsph Haschd

From ColleCtive intelligenCe sa pw ad f

cyb physca syss fuu b wk chs,

h ieee tchy t mach cfc whch k

pac d f may Dsd spad acss a wd a f

pcs. th ps f hs aua cfc h fuu f

chy was pd a s f h chs byd

2020. Hw h pss, scss ad s, p-

fd k dp h cysa ba bu sad a

h ws h ay a fuu.

In his plenary presentation, Inneon CEO Peter Bauer high-

lighted the role of the semiconductors for energy eciency in

a. thuh ay a w pc, Bau dw a s-

ing timeline until 2020 and beyond for eciency gains in energy

generation and distribution as well as in specic automotive

appca ss. Sc 1973, h wds cc y

csup has ha pd ad h dad s cu-

s a cas spd. Aas hs backud, y

eciency indeed seems an urgent topic for industrial as well as

f pa csus.

th hhs y sas pa s h, ap-

pacs ccs, syss, ad sda HvAC

syss, Bau xpad. isy, hs appca

ss h dp f h cc syss qudto drive eciency higher quickly remunerates as the devel-

p s chap ha h y sas b achd.

Progress in power electronics will accompany the development

as a ab f hh pw dsy ad w sss. th

pw dsy f dcs such as s pw ds w

cu cas u 2020 abu 120 kW/c2, Bau

pdcd. Wh days wd-badap scducs such

as SiC are perceived as innovations which drive the eciency

f, f sac, sa s a f 98%, fuu y

unknown semiconductor technologies could drive the eciency

99 pc ad byd. i wd pw a, h

pw p a cud s 10mW f days

6mW, accpad by uch hh aby ad sc f.

i au ccs, scducs ab h ds

f w safy asssa syss such as ada-basd cus

c. Wh Sg w cu pa as h scduc-

chy f chc, w fucs such as cc

ba f ad a f aa fucay w ab

sa d asssa syss wh fucay, Bau

pdcd. Sa psas ad dscusss addssd h

fuu f aufacu. i hs cx, cyb physca syss

s cuy h ubquus buzzwd. Cyb physca syss

(CPS) are huge, complex agglomerations of networked, intelli-

s such as sa cs day cd facs.

ths sa s cud ak pduc ss

aady chaaczd by a hh d f aua such as

h scduc dusy.Dirk Wristers, Vice President Technology R&D for chipmaker

gbafuds aady ppaad hs s f a lhs-u

operation, a fab where the lights can be switched o since no

hua bs a wk h pduc ay. Bsds

the extremely high degree of automation associated to CPS,

Wss skchd h fuu f h scduc dusy wh

a-fabs, cak u ha a wafs p ya -

450 wafs, f cus.

th u ha kps sa cs ad sa facs h

s cucas - wss, s cass. ghad F-

ws, pfss a h Dsd tchca usy ad sa

pu, hd a sups psa, pac Saash

Alamouti from Vodafone R&D. Fettweis did not only link CPS

ad x-a b cucas chy, h

as pdd a ps h chy ha cud ab hs

xy a cuca sch. F hs pspc,

x-a b wk ds f lte huhhs chy s s fa f b ady aaab acss eu-

p bu wha h cas 5g wks. F appcas such

as dusa cs w d udp days h cy f

1 scd, h sad. Up w, a wss wks a

dsd f cuca appcas. th fas wks f

h fuu w b dsd f c appcas sad.

For trac control, cars equipped with these networks could

be guided through intersections without trac light - the real-

daa xcha bw a h ad uss w ab

the vehicles to steer through the densest trac without hu-

a ac. ths w d away wh wa f f h

d h, Fws sad. th g5 wk w as byd

days ca--fasucu cuca appachs, basd

a aa f h kw WF chy. ths chy

has b dsd wa cas f accds f bad ad cd-

s ahad, Fws xpad. F appcas such as

sc c, h acy s uch sw.

th sa hds u f dusa aua. g5 wks

cud f h ss k f a aua appach cu-

y dpd dubbd idusy 4.0 f h hh d f

machine autonomy and exibility intended. This approach pro-

vides for materials and semi-nished products communicating

with tool machines and autonomously nding their way through

h pduc . ths pcss qus ay daa xcha

processes - an ideal application eld for Fettweis real-time

wks.

of cus h a chas. o s h badwdh -qud: Fws sad ha huh h s us hs

cuca schs w y xcha ay sh daa

packs, h badwdh qus w cas by a fac

f 100 1000. ipssb? A h f physcs, h s

shw spp sh, Fws sad.

From left to right: William Tonti, IEEE Future Directions Committee;

Roberto Boisson de Marca, Future Directions Committee Chair,

Maurizio Dcina, General Chair of the IEEE TTM 2012, and Prof.Gerhard Fettweis, Program Chair of TTM 2012.


15/56

FREQUENCY COUNTERSFUNCTION/ARBITRARY

WAVEFORM GENERATORS

INTM E A s U R E M E N T

Function/arbitrary waveform generators can produce a variety of

pulse-width modulation (PWM) signals to emulate analog control signals.

Two options are varying the duty cycle of a square wave and creating

an arbitrary waveform. However, the most versatile solution is to use

a function generator with built-in PWM capabilities, such as the

Agilent 33200 or 33500 Series, which gives you quick access to

all PWM parameters.

To learn more, visit

agilent.com/find/33521A

Download a free copy of

10 Hints for Getting More

from Your Function Generator

DATA ACQUISITION/SWITCH UNITSGPIB CONNECTIVITY

34972A offers LAN built-in web interface foreasy control and interface

3 slot mainframe, built-in signal conditioning

for 11 types of input signals

Free BenchLink Data Logger software easessetup and documentation, 34830A BenchLinkData Logger Pro software also available

GPIB and RS-232 connectivity (34970A), USBand LAN (LXI-C) connectivity (34972A)

34970A/72Adata acquisitionswitch unit,

6 digit

Modular exibility and universal channels for awide range of measurements with no externalsignal conditioning

Function/arbitrarywaveformgenerators

Highest signal delity and true point-to-point arbs let you model real-world signalsmore accurately than ever

Sine waves, square, ramp, triangle, noise,pulse generation with variable edge,DC waveforms, AM, FM, and more

Linear and logarithmic sweeps and burstoperation modes

Model

Description

Connectivity

33521A 1-Channel function/arbitrary waveform generator33522A 2-Channel function/arbitrary waveform generator

16 bits, 250 MSa/s, 1 M points, with 30 MHzpulse, and less than 40 ps jitter

UsB, AN (XI-C),optional gIB

33210A10 MHz

14-bits, 50 MSa/s, 8 K points,(with Option 002), with 5 MHz edge pulse

UsB, gIB, andAN (XI-C)

33220A20 MHz

14-bits, 50 MSa/s, 64 K pointswith 5 MHz pulse

UsB, gIB, andAN (XI-C)

33250A80 MHz

12-bits, 200 MSa/s, 64 K pointswith 50 MHz pulse

GPIB, RS-232

33502A Isolated amplier, dual channel, 50 Vpp UsB, AN (XI-C)33503A BenchLink Waveform Builder Pro software

Validate your most challenging designs with realisticand robust test signals: true point-by-point arbs,variable BW noise and PRBS

Up to 20 ps single-shot time intervalmeasurements

Histograms, trending, data logging, and built-inmath and statistics functions give greater

insights into system behavior Frequency, frequency ratio, time interval,

rise/fall time, phase, and much more

Continuous, gap-free measurements, withtime stamps on signal edges (53230A only);pulse/burst microwave measurements(53230A only)

Optional 6 GHz or 15 GHz RF Channel

USB, GPIB and LAN (LXI-C) connectivity

RF and universalfrequencycounters

Achieve deep insights quickly with histograms,trend charts and statistics

Easily control instruments and exchange datawith maximum throughput

Built-in buffering for speeds up to 900 KB/s

IEEE-488 interface connects up to14 instruments

High-speed USB 2.0 with fast, easy, plug-and-play connection and auto conguration

GPIB transfer rate of up to 1.15 MB/s

Direct PC (USB) to GPIB instrumentconnection

82350B PCIhigh-performanceGPIB interface

82357B USB/GPIBinterface



DESIGN & PRODUCTS POwER SUPPlIES

No magnetics required -

charge pumps can handle the Volts!By Stv Knot

A chArge pump, o switd

aaito volta onvt,

ss aaitos as ny sto-

a lnts to nat an

ott volta. Fo xal,

on basi a iit,

t dobl, dobls t

input voltage, using a single y-

in aaito and fo intnal

swits divn fo a two-

phase clock. In the rst phase

of t lok, a ai of swits

charges the ying capacitor to

t int volta (VIN). In t sond as of t lok, a tid

swit onnts t nativ tinal of t aaito to VIN

f-

ftivly natin 2*VIN

at t ositiv tinal of t aai-

tor. The fourth switch connects the positive terminal of the ying

aaito to t ott aaito. und no load onditions,

a will tansf to t ott aaito on a yl ntil

t ott as to 2*VIN

ts doblin t int volta.

Wn an ott load is snt, t ott aaito o-

vides the load current during the rst phase, while the ying

aaito ovids t load nt and as t ottaaito din t sond as. Fo a tansf to o-

, t ott will lat at a volta slitly low tan 2*VIN

.

T ain and disain of t ott aaito in t two

ass of t lok nats an ott il tat is a fntion

of t ott aaito val, t lok fqny and ott

load nt.

All ot a iit ilntations follow fo

tis basi s by addin/anin swits and aaitos

as wll as t nb of ass of t lok. ca s

an dobl voltas, til voltas, alv voltas, invt

voltas, fationally ltily o sal voltas s as x3/2,

x4/3, x2/3, tta, and nat abitay voltas, dndin

on the controller and circuit topology. The eciency of charge

s an b qit ood wn na ti idal a atio.

In t dobl xal abov, t int sly will b qal to

two tis t ott load nt s tat int ow qals

output power in the ideal case. In reality the eciency will be

slitly low tan idal d to qisnt oatin nt and

other losses. In reality, the eciency will be slightly lower than

idal d to oatin nt and ot losss. T vsatility

of a s nabls ti sa in a wid vaity of a-

liations and akt snts.

Charge pumps ll a niche in the performance spectrum

between LDOs and switching regulators and oer a nice

alternative to designs tat may be indutor-averse. compared

to LDOs, arge pumps require an additional apaitor (a

y cap) to operate but do not require inductors, which aregenerally sligtly more ostly, ave iger output noise levels

and usually ave lower output urrent apability. however,

they have many benets over LDOs such as higher eciency,

good termal management due to switing ariteture and

have more exibility to step a voltage up as well as down, or

generate negative voltages. Wen ompared to onventional

switing regulators, a arge pumps output urrent apability

and eciency are lower. However, they are simpler to design

and do not require an indutor. Furtermore, advanements

in proess tenology ave enabled an expansion of arge

pump input voltage range ompared to previous generations.Table 1 provides a omparison of key performane parameters

between topologies.

Design & application challenges for chargepumpsT a sval indstial nvionnts tat av sinl-nd-

d, i volta ow slis adily availabl. howv,

ts slis a not sitabl fo divin o as and ot

iits tat qi biola ow slis s as ow-

in dal-ail, low nois i volta o as, qiin 15V

ails fo a sinl +24V sly. O as divn los to ti

nativ ail av vy oo distotion. Tfo, it is dsiabl

to av a nativ ail tat is low tan t lowst sinal lvl

in od to ovid t lowst distotion at t o a ott.

T it ty of a ay svi tis nd and lo-

ally nat an invtin ow sly to div t ails of t

o a o ot nois snsitiv iity sin low nois ost

latos.

many odn oniation dvis s snsitiv rF

ivs, bt t obination of nois natos (swit-

in ow slis) and nois-snsitiv iity an at

t otntial fo intfn. T taditional soltion as bn

to k nois natin iits away fo nois snsitiv

iity. howv, in odn andld odts, vytin is

so titly akad tat tis is no lon ossibl. Sildin is

not atial fo bot ost and siz asons. Taditional swit-

in ow slis onntat nois ny into naow-bandaonis. Yt, if on of ts aonis ans to oinid

wit a snsitiv fqny (a ivs intdiat fqny

o IF assband, fo instan), intfn is l ikly to slt.

Charge pumps oer suciently low noise thresholds and can ll

tis void.

Stv Knot is Snio podt maktin enin in t pow

podts go at Lina Tnoloy cooation -

www.lina.o

Table 1: LDOs vs. charge pumps vs. switching regulator performance


17/56

OSCILLOSCOPES HANDHELD OSCILLOSCOPESMODULAR INSTRUMENTS



5.7-inch VGA TFT LCD display with indoor,outdoor, and night-vision viewing modes

3-in-1 instrument: scope, DMM,and data logger

Two independent, isolated channels(100 MHz - U1610A or 200 MHz - U1620A)

Up to 2 GSa/s sample rate and up to 2 Mptsdeep memory to zoom in on critical details

Benchtop-like dual window zoom for moredetailed waveform ananlysis

U1600 SeriesHandheld Scopes

Maximum versatility to troubleshoot todayschallenges and anticipate tomorrows needs

USB modularinstruments

Mix and match the USB modular instruments,DAQ modules or switching I/O units to meet

your measurement needs Instrument and DAQ modules can be used

standalone or integrated together in theUSB modular chassis

Hi-speed USB 2.0 interfaces for easy setup,plug-and-play, and hot swappable connectivity

U2781A USB modular product chassis canhost up to six modules and synchronizemultiple instruments

Bundled Agilent Measurement Managerlets you congure and control a system withno programming

USB modular instrumentsU2701A/02A 100/200 MHz oscilloscope

U2722A/23A 3-channel source measure unit

U2741A 5 digit digital multimeter (DMM)

U2751A 4x8 switch matrix

U2761A 20 MHz function generator

U2781A Modular chassis

USB modular data acquisition

U2300A Series USB modular multi-functionDAQ devices

U2500A Series USB modular simultaneous-

sampling multi-function DAQ devicesU2100A Series USB digital I/O devices

U2600A Series USB modular isolateddigital I/O devices

U2121A-based RF switch driver

U2802A 31-channel thermocoupleinput module

Anticipate every new challenge withrecongurable portable test systems

NEW

InfniiVision2000 X-Seriesoscilloscopes

8.5-inch WVGA display offers 2x theviewing area and 5x the resolution ofcompetitive scopes

70 to 200 MHz bandwidth, 100 kpts

memory, DSO and MSO models Up to 50,000 waveform updates/second

Fully upgradablebandwidth, MSO,measurement applications, WaveGenbuilt-in 20 MHz function generator, andintegrated digital voltmeter

InfniiVision3000 X-Seriesoscilloscopes

InfniiVision7000B Seriesoscilloscopes

12.1-inch displaynearly 40%larger than competitive scopes

100 MHz to 1 GHz bandwidth, 8 Mptsmemory, DSO and MSO models

Hardware-based measurementapplications including serial decode

Up to 100,000 waveform updates/second

Upgradable MSO and measurementapplications

Breakthrough scope technology lets you see more,do more and get more for your money

NEW

1. Order N2741A for DSO701xB, N2735A

for DSO703xB, N2736A for DSO705xB,

and N2737A for DSO710xB.

2. Available on 4 channel DSO modelsand 4+16 channel MSO models only.

3. Available on MSO models only.

Now

available

to1GHz

bandwidth

Description 2000 X-Series 3000 X-Series 7000B Series

Mask/waveform limit testing DsX2MAsK DsX3MAsK N5455A

Segmented memory DsX2sgM DsX3sgM N5454A

WaveGen function generator DsX2WAVEgEN

WaveGen arb/function generator DsX3WAVEgEN

Integrated 3-digit voltmeter DsXDVM DsXDVM

Education training kit DsXEDK DsXEDK

DSO to MSO upgrade kit DsX2Ms DsX3Ms see note1

I2C/SPI trigger and decode DsX3EMBD N5423A2

RS232/UART trigger and decode DsX3CMp N5457A2

CAN/LIN trigger and decode DsX3AUT N5424A2

I2S trigger and decode DsX3AUDI N5468A2

Mil Std 1553 trigger and decode N5469A2

1553/429 trigger and decode DsX3AER

FlexRay trigger and decode DsX3FlEX N5432C2

Advanced Math DsX3ADVMATh

HDTV video analysis DsX3VID

Power measurement and analysis DsX3pWR U1881A

Xilinx FPGA dynamic probe N5406A3

Altera FPGA dynamic probe N5434A3

EW

see

PROMOpage2

see

PROMOpage2




Any soltion to satisfy t a Ic dsin on-

straints outlined above would combine an ecient high voltagea wit latd otts and low ott nois.

A new and simple solutionLina Tnoloy as dvlod sil, yt soistiatd,

i volta invtin onoliti a Ics fo ts

aliations. T LTc3260 and LTc3261 a vsatil a

s. T LTc3261 is a i volta invtin a

tat an dliv to 100A of ott nt. Was t

LTc3260 inlds an invtin a ls bot ositiv

and nativ LDO latos tat an so to 50A ott

nt a wit low doot volta oation. T nativ

LDO ost lato is owd fo t invtin a

ott. T ositiv and nativ LDO ott voltas an b

adjstd down to 1.2V and -1.2V, stivly, sin xtnal

sisto divids. Bot dvis oat ov a wid 4.5V to 32V

input voltage range. See gures 1 and 2 for details.

T intnal a of bot t LTc3260 and LTc3261

fntions in it low qisnt nt Bst mod oation

or low noise constant frequency mode at up to 88% eciency.

In Bst mod oation, t a ott lats to

0.94 VIN

. Also, in Bst mod oation, t LTc3261 daws

only 60A of quiescent current, while the LTC3260 draws only

100A wit bot LDOs nabld. constant fqny oa-

tion oers low input and output ripple; in this mode the charge

ods an ott qal to VIN

and operates at a xed

500khz o to a oad val btwn 50khz to 500khz,

sin an xtnal sisto. Ot Ic fats inld low x-tnal ats ont wit ai aaito stability, soft-stat

circuitry to prevent excessive current ow during startup, plus

sot iit and tal ottion. T LTc3260 and LTc3261

a wll-sitd fo a vaity of aliations s as low nois

biola/invtin slis fo a i volta int, indstial/

instntation low nois bias natos, otabl dial

qint and atootiv infotainnt systs.

The LTC3260 is available in a low-prole (0.75mm) 3x4mm

14-lad DFN aka and a 16-lad mSOp aka, bot wit

a baksid tal ad. T LTc3261 is availabl in a 12-ladmSOp aka wit baksid tal ad. Oatin jntion

tat fo it dvi is -40c to +125c.

Low output rippleT LTc3260s dsin inntly ovids low nois fo-

an. T dvis i oatin fqny lads to a low

ott il. T LTc3260 LDOs ft jt tis il as

sown in Fi 3 to dliv vy low nois otts


19/56

POWER SUPPLIES

Output noise as low as 1 mVp-p/0.2 mVrms

Tight 0.01% load and line regulation

Fast load transient response time (




Comparing uninterruptible

power supply topologiesBy Mke Ems

Today, uninTErrupTiBlE powEr s (upS) sstems e

tc eme t st t cetes, cmmcts

hbs the cts sg sestve iCT eqmet. These

stts cts vbt s s ctc t the -

es svv, s ce, tete e s becmes

bsess-ctc eqemet. ue these ccmstces, e

upSs e estb the mst chce. The eve

cesse, ce e e cts tsfe t bt-

te tht e tet f the ms fs. Heve thee

e st m cts th ess ctc eqemets; these

can benet from the lower costs of an o line UPS solution.

This article therefore compares on line and o line UPS topolo-

ges, tgethe th th vt e tectve tg. as

rising energy costs sustain the demand for better energy e-

cec, ths tce s eves Ec me upS et ts

ctbt t mve puE. acts tht se upSs v

get sze s e s te. Sm esk t stmett

evces m fm tbe t th cct f t 250

VA, whereas a large data centre serving a signicant enterprise

c c f mte ts eveg t 5 MVa me.

On line UPS topology and advantages

iesectve f the sze tg, upSs ee bt-te, mes f chgg t meth f cvetg ts dC tt t aC f the ctc g ms fe. a

e upS efms these fcts th sees f e bcks

between the mains supply and the critical load - see gure 1. The

rst of these is a rectier/charger which oat charges the battery

he the ms s eset. it s ses stbe dC vtge

t the sec bck - vete hch fees the ctc .

During a mains failure the oating battery seamlessly takes over

the tsk f sg dC t the vete, t hch t s emet

cecte. Theefe, the evet ems t vsbe t the ct-

c ess the btte becmes schge. Ths semess

e ctt s ke ttct f ctc cts tht

m t be cbe f g t stchg e.

athe mj vtge ses fm the e upSs

conversion topology. The input rectier removes all the incom-

g ms skes, tsets se b cvetg t t dC.

The vete the fees the th ce e aC vefm

which is tightly regulated by the UPS. The rectier also provides

e fct cect, hch eces hgh feqec hmcs

the cet fm the ms. The e upS cts s

true power rewall, protecting sensitive instrumentation and ICT

eqmet fm ms-be bems he mvg the

esete t the ms.

Of line topologyBy contrast an o line UPS, during normal operation, feeds raw

mns to the crtc od throgh byss ne nd sttc swtch

- see gure 2. The load is therefore exposed to poor voltageregton nd ossby nose nd trnsents from the mns. if

the mns trnsgresses reset mts, the sttc swtch trnsfers

the od to the upSs nverter nd bttery chngeover brek

that can last from 2ms to 10ms. Many operators of data centres

and other sensitive equipment consider o line UPS systems

Mke Ems s Technc Ses Mnger for unnterrtbe power

Ses lmted - www.sower.co.k he cn be reched t

[email protected]

Fig. 2: Off line UPS topology.

Fig. 1: On line UPS operation.


21/56

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Convenient combination DMMand power supply

DMM: 120,000 counts resolution

with DC voltage accuracy 0.025% Power supply: Dual range 30 V / 1 A or

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U1177A details pg 8

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to be nstbe for ther ctons becse of these ower

qty nd chngeover brek fctors.

Another disadvantage of a basic o line system is that, unlike

n on ne desgn, t cnnot comenste for mns sy vot-

ge mt trnsgressons. insted t mst resond mmedtey by

swtchng between byss nd the nverter for every trnsgres-

son event. Ths cn hen freqenty f the mns sy s

nstbe or the crtc od hs tght votge toernce. artfrom sbjectng the od to freqent sy nterrtons, the

battery may have its life reduced or be insuciently charged as

rest. However ctons whch cn toerte these dsd-

vantages enjoy two key cost benets from using o line topol-

ogy. Firstly, an o line UPS reduces capital costs compared with

n on ne eqvent throgh sng ower-rted comonents

and dispensing with a power rectier. Secondly, running costs

re ower becse the chrger nd nverter, wth ther nevtbe

ineciencies, are not on line during normal operation.

Line-interactive topology choicesSome UPS manufacturers also oer line-interactive UPS systems.

These use o line topology, but address the voltage transgres-

sion problems of o line systems mentioned earlier. They do so by

vg vtge egt the ms e hch ses

the load during normal operation see gure 3. This voltage

egt, b ecg the mbe f t f mt vtge evets

echg the , es the feqec f ms btte ts-

fes. at fm sbjectg the t fee e tets,

this design oers slightly better running cost eciency and less

battery wear than o line systems.

Line-interactive systems are usually implemented with buck/

boost transformers or ferro-resonant transformers. Buck/boost

tsfmes mt the vtge ve t vtge

range of +20% to -30%, however their switching involves tap

chges hch mse ste vtge chges the . le

tectve memetts bse fe-est tsfm-ers can typically supply a load voltage within 3% of nominal over

s ge f +20% t -40%. The s ve e

ctg tect fm stbces sch s eectc

e se. Heve, the ke vtge s tht the ste egh

eectc eeg t st mst pC s he the upS vete

switches on, eectively creating an on line UPS solution.

wth ts sg eeg ces, esse t mve eeg

eciency and data centre PUE has renewed interest in eco mode

et f e upSs. Ths me s ses t te

ms ect t the ctc g m et t svethe eeg tht these be st thgh the upSs ef-

ciencies. However, in exchange for this energy gain of perhaps

3%, the critical load is being exposed to mains disturbances and

transfer events, as with an o line UPS. Some users will accept

this trade-o, especially as they can choose to operate the UPS

e the th Ec me g es f cese tt

g stbces.

The bigger pictureove, ets essbe f t cetes the ctc

sestve s efe the cesse, bek e tht

e upSs c ve. Heve t mke the mst f

the tg ts tet f tect, the upSs sh be

ste s t f e scheme tht ctes f evet-

ties. For example, suppose the UPS rectier and bypass line are

fed from a common power source, which at some time suers a

power failure period exceeding the autonomy of the UPS battery.

The upS hs fthe ts, s e t the ctc s

st. i sme cts ths m be ccetbe, becse the

upS btte tm ves egh tme f the ctc

t be sht sstemtc sfe. i thes, ths t

be egh; ss f sevce s ccetbe.

One solution is to use a conguration known as a split bypass

system, in which the bypass line and UPS rectier are connected

to dierent mains supplies. This means that if the UPSs supply

fails and its battery becomes exhausted, the UPS can switch to

the st-heth bss e t eve cte thgh -tecte - e t the .

athe e se st s t cect stb gee-

t s tetve fee t the upS. if the upS etects ms

fe hch s me th tset bem, t c se

stt- sg t the geet. Ths c the t see

stbse th the upS btte tm, s the ejs

cte ce e tht tet.

as e s tectg the fm e s bems, the

upS mst s mge bems cse b the tsef. The

upSs esse t ve m be t tsfe t t bss

bt f the bss s s t vbe, ths sm eve

the f e. a bette tetve c be t the upS

t s the ve f set e; egh f tmtc

scect b tect fse cct beke. dg ths

e, the upS tsef c be tecte b beg ete

cet-mte, ece vtge me, hch s efebe t

tt ss f e.

i smm e c s tht f ctc cts thse -

vvg sestve eqmet, e upS tg s the e

st, e t ts eve f cte e semess

transfer to battery. For less critical applications, o line topology

m be stbe, s ttctve e t ts ece ct

operating costs. Line interactive systems oer an improvement on

o line topology, with better power conditioning and regulation,

ece btte e. Fe-est tsfme e tec-

tive solutions also oer seamless load transfer. Pressure to reduce

puE hs cese teest Ec me et, bt ths shesmost of the characteristics and disadvantages of o line topology.

The best ssbe e qt vbt ests cme fm

e upS sstems esge t ve e tect

stteg.

Fig. 3: Line interactive UPS with buck/boost transformer.


23/56

The U1600 series handheld scopes get even moreversatile, and the 3000 X-Series gets a bandwidthboost to 1 GHz. See page 5.

Adding Bluetooth wireless connectivity

to handheld digital multimeters can improve

productivity and safety in numerous ways.

You can now:

Viewmeasurementsmadebyuptothree

DMMs simultaneously

Workfromupto10metersawayfromhazardousor inaccessible measurement sites,

Monitorandlogdatausingyoursmartphone

or tablet

SharedataviaemailorSMS.

To enable these wireless capabilities, simply attach the

Agilent U1177A Infrared (IR)-to-Bluetooth adapter to the IR

port of any Agilent handheld DMM and install the free Agilent

Mobile Meter and Mobile ogger apps for Android devices.

To learn more, visit:

See page 7

www.agilent.com/find/hhgowireless-bluetooth

NEW

Bluetooth and the Bluetooth logos are trade-

marks owned by Bluetooth I, Inc., U..A.

and licensed to Agilent Technologies, Inc.

Technical data and pricing subject to changewithout notice.

Data Source:

Agilent Technologies customer database

ublished in pain, June 1, 2012 Agilent Technologies, Inc. 2012

5991-0059EEE

www.agilent.com/fnd/advantagepack

Agilent Advantageervice ack*

Add a premium warranty

to your instrument orderand receive the most com-prehensive coverage in theindustry. Easy to buy, easyto register, the Advantageack provides no worrycoverage for you and yourbusiness.

eace of mind and abso-lute condence in your testmeasurements.

* Advantage Pack is available in the United States,

Canada and the 27 member states of the European Union.

NEW

Current country type approval allows the U1177A to be shipped only to the following

countries: Australia, Brazil, Canada, China, Colombia, El Salvador, European Union,

Guatemala, Hong Kong, Iceland, India, Israel, Japan, Korea, Liechtenstein, Malaysia, Mexico,New Zealand, Norway, Panama, Singapore, Switzerland, Taiwan, Thailand, United States.




Rugged AC/DC poer unit targets raiay

appications ith 400w outputAbsopulse Electronics has introduced the POL 400R Series railway

quality, ac/dc switch mode power supplies. The units meet rele-vant sections of EN50155 for electronic equipment used on railway

rolling stock. The devices also comply

with EN50121-3-2 and EN55022 Class

B conducted and radiated EMI and

applicable EN61000 standards. The 400

W power supplies operate from input

sources of 115 Vac (97132 Vac range)

or 230 Vac (195-264 V) and deliver

outputs of 12 Vdc, 24 Vdc, 36 Vdc, 48

Vdc or 110 Vdc. Eciency is between 80 and 90%, depending on

the input/output conguration required. The POL 400R Series has

comprehensive protection features including 3000Vdc input/out-

put isolation, overload protection and current limiting. An optional

output redundancy diode allows for parallel connection to achieve

higher output power or N+1 redundancy. Other options include

an output fail alarm and an LED adapter can be installed on the

terminal block to indicate an output ON condition. The POL 400R

units are conduction cooled and operate in a -40 to +70C cold

plate temperature range for full specication. Housed in rugged,

compact 131x66x232mm enclosures, the power supplies are fully

encapsulated in a thermally conductive MIL-grade silicon rubber

compound, which protects against high levels of shock and vibra-

tion (EN61373/IEC61373), moisture, dust and other contaminants.

ABSOPULSE Electronics

www.absopulse.com

300-w 3U CompactPCI poer suppies target

ruggedised industria and marine appicationsGresham Power Electronics has launched ruggedised versions

of the companys 300 W, 3U cPCI power supply. Available in 24

VDC, 48 VDC and universal AC input versions the ruggedised

power supply range has a conformal coat-ing for extreme industrial, MIL/COTS and

marine applications. Fully compliant to the

PICMG 2.11 Power Interface Specication

the AC 3U 300R provides 300W maximum

power in standard 3U x 8HP shelf space

with interconnection via a Positronic 47

pin connector. The new cPCI power sup-

plies are hot-swap and parallel redundant enabled. Extra-high

power density allows up to 40 A to be drawn from the +3.3 VDC

output and 30A from the +5 VDC output at 55C. The two main

outputs feature remote sense and OR-ing diodes allowing single

wire current sharing for increasing output power or n+1 redun-

dant operation. The power supply has control signals for over-

temperature, over voltage and over current protection as well

as power-good and inhibit for systems integration. Input good,

power fail and over temperature front panel LED indicators are

also tted. The new Gresham ruggedised CompactPCI power

supplies are industry standard size, 3U x 8HP, and have the

customary +5 VDC, +3.3 VDC and 12 VDC outputs. The AC

input model has a universal input from 90264 VAC and active

power factor correction. Very high eciency and power den-

sity are achieved by employing independent parallel converter

topology and state of the art synchronous rectication, low

prole magnetics and a high degree of surface mount assembly.

Gresham Power oer a very wide range of 24 VDC, 48 VDC and

AC input cPCI products including the market leading CPCI-

AC-6U-650 6U 650 W output model. The DC input versions ofcPCI power supplies are suitable for vehicle and ground station

installations while the AC models meet conventional rack based

requirements.

Gresham Power Electronics

www.greshampower.com

Open rame 40w, AC/DC poer suppies

on a 102x51mm PCBAvailable now from MicroPower Direct, the MPO-40S series

is a family of high performance 40W open frame AC/DC pow-er supplies fabricated on a compact 102x51mm PC board.

They oer the small size, robust

performance and economy required

by a wide variety of OEM applica-

tions. Eight standard models operate

from a universal input of 90 to 264

VAC, providing tightly regulated

single outputs of 3.3, 5, 9, 12, 13.8,

15, 24, or 48 VDC. Standard features

include ltering to EN55022 Class B,

compliance to EN 61000-4, and tight line/load regulation. All

models are protected for over load, and short circuit faults.

The MTBF of the MPO-40S (per MIL HDBK 217F) is greater

than 400 khours. All models are approved to EN 60950. Each

model is rated for operation over the wide operating tem-

perature range of -10C to +70C (ambient).

MicroPower Direct

www.micropowerdirect.com

3U orm-actor PSU deivers 400w o poer

confgurabe to fve DC outputsPulse Electronics 3U form-factor PSU for VPX applications

is now available with optimized Positronic P47 connections

and can be congured to deliver more than 400 W of power

plus provide an additional high

power 28 V protected output.

Pulse Electronics 3U form-factor

power supply unit (PSU) is now

available with optimised Posi-

tronic P47 connections allowing

delivery of more than 400 W of

power. The PSU, which is intended for military and aero-

space VPX-based applications, comprises a number of Pulse

Electronics high-reliability, planar technology power mod-

ules and can be congured to have up to ve DC outputs.

For example, one conguration might be: +12 V, -12 V, +5 V,

+3.3 V and an auxiliary +3.3 V; all referenced to a common

0 V. Of these output voltages, +12 V tends to be the one of

which the highest power and current are now demanded,

rather than the historic high current outputs for either the

5 V or 3V3, in light of the trend to down-regulate closer to

processors. Through the use of optimised P47 connections,

and feeding out on up to four pins rather than the single pin,

some 25 A (i.e. 300 W) of peak power can be provided on the

+12 V output. The use of P47 connections also means thePSU can be congured to provide a 28 V protected output

(rated up to 320 W).

Pulse Electronics

www.pulse-electronics.co.uk


25/56www.electronics-eetimes.com Electronic Engineering Times Europe July/August 2012 25

Sma ootprint poer suppies

are extended to 3-kVUltraVolts has increased the voltage levels of its V Series and

M Series of microsize, micropower products by up to 100%.V Series and M Series modules are now oered at 0 to 2kV,

0 to 2.5 kV, and 0 to 3 kV with 5, 12, and 24 V inputs. These

new extended voltages also come with an Enhanced Interface

(EI) Option, which adds a current monitor and enable pins. V

Series and M Series modules oer programmable regulated

output, high accuracy, and low ripple (0.01% peak to peak). The

volume for the V Series is just 13.8cm3, and the volume for the

M Series is 20.9cm3. The V Series and M Series are optimal for

handheld devices and lightweight systems. Typical applications

include avalanche

photo diodes (APD),photomultiplier tubes

(PMT), X-ray imag-

ing sensors, Pockels

cell, q-switches, and

micro-channel plates.

UltraVolt

www.ultravolt.com

www.cu .com power

Ac-Dc Power SuppliesOpen Frame l Chassis Mount l External

10W~400W

1W~2400W

0.25W~600W

Dc-Dc ConvertersBoard Mount l Chassis Mount

Digital Power ModulesIntermediate Bus l Point of Load

With a continuous focus on effi ciency,density, and system optimization,

we keep our customers on the leading-edge of the power curve.

point of loadto thefrom the wall

Efficient

SOLUTIONS

POWER

TM

150 and 200 watt IP67-

rated lED poer suppiesExcelsys Technologies LDB 150

LED and LDB 200 power supplies

provide 150 watts and 200 Watts of

constant current/constant voltagepower respectively in an IP67

rated, low prole, aluminium case.

Measuring only 198x63x35mm with

the UL8750 and CE markings, the

LDB150 and LDB 200 series each

feature two models oering 24V or

48V nominal output voltages. The

units oer constant voltage operation

up to their full load capability and

then constant current operation

down to 50% of their nominal output

voltage. An extended universal

AC input range of 90-305VAC with

active power factor correctionwith high eciency operation up

to 92.5% make these units ideal

for green lighting applications.

Additional features include -30

to +70C operating temperature,

built-in over-current protection,

over-voltage protection, over

temperature protection and short-

circuit protection high line and load

regulation, an MTBF of 1,000,000

hours per Telecordia SR-33 and

both models are backed by a 5 year

warranty. Custom output voltageand output current set-points are

available for OEM applications.

Excelsys Technologies

www.excelsys.com


26/56

ACCRETECH (Europe) GmbH acp-IT (advanced clean production InformationTechnology) AG Advanced Vacuum Europe AB AES motomation GmbH AG

Semiconductor Service Altatech Semiconductor Amcoss GmbH Applied

Materials Arias GmbH Asahi Diamond Industrial Co. ATM Vision AG / ATM

Group ATT Systems GmbH ATV Technologie GmbH Swagelok Berliner Glas

KGaA Herbert Kubatz GmbH Bosch RexRoth AG Brooks Automation camLine

Datensysteme GmbH Camstar Systems Centrotherm Thermal Solutions

GmbH cleanpart Dresden GmbH COLANDIS GmbH Compugraphics

Jena GmbH Comvat AG CWE Economic Development Corporation City of

Chemnitz Dainippon Screen (Deutschland) GmbH Dalau DAS Environmental

Expert GmbH DELTA DISCO HI-TEC EUROPE GmbH DMS (Dynamic

Micro Systems) GmbH Draeger Safety AG DTU Danchip Ebara Precision

Machinery Europe GmbH ePAK International Equip-Test GmbH ERS Electronic

GmbH ESL Elektronik GmbH E-Tech Solution Euris GmbH EV Group Europe

& Asia/Pacific GmbH Evatec AG Faeth GmbH Feinmetall GmbH Ferrotec

GmbH Fraunhofer ENAS- Institute for Electronic Nano Systems Fraunhofer

IZFP Dresden FUJIFILM Electronic Materials (Europe) N.V. GCE GmbH Gold

Tech Industries Hager+Elsaesser GmbH HAP GmbH Dresden Heateflex

Corporation HORIBA Europe GmbH H-Square Corporation HTT, High Tech

Trade GmbH INFICON GmbH Infineon Technologies Dresden GmbH Innolas

Semiconductor GmbH Isel Germany AG John P. Kummer GmbH JSR

Micro NV KITZ SCT Corp. KoCoS Automation GmbH Kurt J. LeskerCompany Leica Microsystems Semiconductor GmbH Levitronix GmbH Leybold

Optics GmbH Logitech M+W Group Maicom-Quarz GmbH MCRT Micro

CleanRoom Technology GmbH Micro Resist Technology GmbH MicroChem

Corp. MicroChemicals GmbH Microcontrol Electronic SRL Moog Industrial

Group MueTec GmbH MULTI-LAB Quartz TEC Neaspec GmbH OC

Oerlikon Balzers Oxford Instruments Plasma Technology Pall GmbH Peter

Wolters GmbH Photon Control Photronics MZD GmbH Physik Instrumente

(PI) GmbH POSAS GmbH PVA TePla AG PVA TePla Analytical Systems

GmbH QuantumClean Quarld - Quartz World Ramgraber Semiconductor

Equipment GmbH Roth & Rau - Ortner GmbH SAMCO Saxony Schenker

AG NMI SEMI Europe Grenoble Office Semilab Semiconductor PhysicsLaboratory Co. SemiQuarz GmbH SEMPA Systems GmbH SENTECH

Instruments GmbH Servometer Precision Manufacturing Group Siconnex

customized solutions GmbH Silicon Saxony e.V. Solar Semi Engineering solar-

semi GmbH Solid State Equipment SPEA GmbH SPS-Europe B.V. SPTS

Technologies Surplusglobal SYNOVA SA. Systema GmbH Technic

France TELTEC Tempress Systems, B.V. Thales Communications and

Security VAT Deutschland GmbH Vistec Electron Beam GmbH VON ARDENNE

Anlagentechnik GmbH Watlow GmbH Yole Developpement znt Zentren fuer

Neue Technologien GmbH

SEMICON Europa is the place to stechnologies, and people driving

nanoelectronics design and manu

MEMS

3D IC Technology

Advanced Packaging and Test

Solid State Lighting / LED

Semiconductor Manufacturing Fab Automation / Enhancement

Lithography / EUV

450mm

Secondary Equipment

Plastic, Organic and Large Area Electr

Research (Science Park)

For more information please co

SEMI Europe T

Helmholtzstrasse 2-9 s

10587 Berlin, Germany w

Exhibitors(Extract, Status June 2012)

www.plastic-electronics.org

The Powe

Event Sponsors:Co-located with:


27/56EUR

he leading companies,future of micro- and

uring.

s

ct:

49 30 3030 8077 0

[email protected]

semiconeuropa.org

of [Europe]

911 October

Messe Dresden, Germany

The Power of [Europe]

350+ Exhibiting Companies

41 Programs and Events

www.semiconeuropa.org

INFORMATION

Plan your trip now and register online!

www.plastic-electronics.org

Co-located with:

EUV

LED/SSL

450mm

More than Moore

3D IC

MEMS

Fab Automation

Equipment


28/56

Exhibition TechARENA 1 TechARENA 2 ConferenRegister now online! Free Participation - Hall 1 Free Participation - Hall 2 MEMS, Test, Pac

Monday

8 October

InternationalMEM

Industry Forum

New Dynamics in t

Industry

Tuesday

9 OctoberExhibition

10:00 17:00

Show Floor Highlights:

- Science Park

- Secondary Equipment and

Services Pavilion

- MEMS, Test and Packaging

Pavilion

- PE2012 Exhibition

New Materials Session Packaging Session

Exhibitor Presentations

PE 2012


InternationalMEM

Industry Forum

New Dynamics in t

Industry

MEMS


Advanced Process Control

(APC) and Manuacturing

Secondary Equipment

and Technology Session

Advanced Packagin

Manuacturing Con

Packaging Solution

New Technologies

Wednesday

10 OctoberExhibition

10:00 17:00


- Science Park


Services Pavilion


Pavilion

- PE2012 Exhibition

Test


Market Briefng

Workshop on Equipment

Assessment & Equipment

Perormance Improvements

Advanced Packagin

Manuacturing Con

Packaging Solution

New Technologies

Metrology, Process Control,

Automation and Sotware

14th European Manu

Test Conerence (E

Overcoming New Te

Challenges throug

Cooperation and In

Thursday

11 OctoberExhibition

10:00 16:00


- Science Park


Services Pavilion


Pavilion

- PE2012 Exhibition

3D IC Session Lithography Session 14th European Manu

Test Conerence (E

Overcoming New Te

Challenges throug

Cooperation and In

LED / SSL Session

Programs and Events: 8-11 October 2012

Exhibits: 9-11 October 2012

Messe Dresden, Germany

Event Schedule

Event Sponso

www.s

emico

neuropa.o

rg


29/56

s Exec. Programs Standards

CEI-Eur

ope

Courses

inA

dvanced

Technology

CoursesorganizedbyCEIwww.c

ei.se

|w

ww.s

emiconeuropa.o

rg/courses

g Semiconductors Business & Marketwww.plastic-electronics.org

Free Participation

PV Equipment Interace

PV Waer Traceability

PV Automation

MS

16th Fab Managers Forum

Networking Evening

MS

16th Fab Managers Forum

Conference

Press Conerence Plastic Electronics Conerence

Plenary Session

PV Ribbon

PV Silicon Materials

e

he

6th Executive Summit and

Reception

SAXONY! - Get Together

Plastic Electronics Conerence

Parallel Sessions

- OLEDs for Displays and Lighting

- Flexible and Organic PV

- Integrated Smart Systems

Photovoltaic Materials

Equipment Automation

e

he

SPECTARIS-Forum

Semiconductor Production

Technology

(organized by SPECTRARIS)

Third European Cluster

Documents

EETimes July-August 2012