Upload
others
View
2
Download
0
Embed Size (px)
Citation preview
1
EEDF Formation in Plasmas(ISPC-18, IUPAC Summer School, Aug. 23, 2007)
Kenichi NanbuProfessor Emeritus, Tohoku University, JAPAN
2
Outline1. Introduction
Definition of EEDFTwo-temperature Maxwellian
2. EEDF from PIC/MC3. EEDF of RF Ar Plasmas
Effect of pressureEffect of frequencyEffect of secondary electron emission coefficientEffect of position
4. EEDF of RF CF4 PlasmasEffect of pressureEffect of frequencyEffect of secondary electron emission coefficient
Acknowledgements
3
1. Introduction
Homo sapiens-peaceBalance of male and femaleStop killing people by peace keeping
Plasma-sheathBalance of positive and negative species (bulk)Stop killing electrons by sheath formation (sheath)
4
Plasma consists of bulk(neutral) plus sheath(positive)
In DC, bulk has a potential hill with a flat top.Electrons cannot go down the hill.Discharge is self-sustained.
Definition of EEDFN : electrons in volume element dV
: number of electrons inεεϕ dN )( ),( εεε d+1)(
0=∫
∞εεϕ d
⎟⎟⎠
⎞⎜⎜⎝
⎛−=
e2/3
eM exp
)(2)(
kTkTεε
πεϕ
Te: electron temperature
(equilibrium)
5
e
const.)(lnkTε
εεϕ
−= (equilibrium)
Measure EEDF(lhs) → obtain TeElectron density : ne = N /dVDo not confuse !
)eVm( / )(:EEPF
)eV( / )( :EEDF3/2-3-
e
-3/2
εεϕ
εεϕ
nVelocity space and VDF
vv dNf )( : number of electrons in at
zyx dvdvdvd =vvd v
1)( =∫∞
∞−vv df
6
Mean velocity (drift velocity)vvvv df∫
∞
∞−= )(
Electron temperature:Te
vvvv dfmkT ∫∞
∞−−= )()(
21
23 2
e
22 )(21)(
21 vvv mdfvm −= ∫
∞
∞−
( )22e )(
3v−= v
kmT
⎟⎟⎠
⎞⎜⎜⎝
⎛−⎟
⎠⎞
⎜⎝⎛=
kTvv
kTmv
2exp
24)(
22
2/3
ππχ
Often, is negligible, but never so for ionDistribution of speed or
2)(vv v
)()(,21 2 εϕχε →= vmv
(equil.)
7
Why is EEDF important?Various reactions occur in processing plasma.Rate constant kr is obtained from EEDF.
e- + Ar → e- + Ar+ + e-
EEDF governs rate constant.
εεϕεσεε
dm
k )()(2iziz
th∫∞
= (ionization)
8
-20
-15
-10
-5
0
5
0 10 20 30 40 50
Energy (eV)
ln{E
EDF
[eV
^(-3
/2)]}
Raw DataT1 = 1.840 eVT2 = 0.8929 eV
If equilibrium is assumed, the rate obtained is far from true.Example : Ar, rf plasma, f =13.56MHz, p = 200mTorr, γ=0.1
9
EEDF is two-temperature Maxwellian.
T1=1.840eV, T2=0.8929eV, εc=13.0eV
⎩⎨⎧
>≤
=c2M2
c1M1
for),(for),(
)(εεεϕεεεϕ
εϕ
TcTc
10
Since εiz=15.76eV > εc , EEDF for ε> εc governs the rate kiz. Coefficients c1, c2
c1 = 0.999094c2 = 607.048
c2M21M1
2M210 M1
at ),(),(
1),(),(c
c
εεεϕεϕ
εεϕεεϕε
ε
==
=+ ∫∫∞
TcTc
dTcdTc
xxxdtttx
erfc4
)exp(21)exp( 222 π
+−=−∫∞
{rate const. for equil. T1}
{rate const. for two-temp}= 26.0
11
2. EEDF from PIC/MC
EnergyVelocity v is governed by the Boltzmann equation.Velocity distribution function f (v, x, t ) of electrons
Number of electrons in dv×dx is nf (v, x, t ) dvdxB eq shows :
E-field, B-field, elastic coll., and inelastic coll. govern EEDFPIC/MC : solution method of B equation
Ref : K. Nanbu, IEEE Trans, Plasma Science, Vol.28(2000)971-990.PIC/MC code:(株)計算力学研究センター(www.rccm.co.jp)
inelel
)()(
)()()()(
⎟⎠⎞
⎜⎝⎛
∂∂
+⎟⎠⎞
⎜⎝⎛
∂∂
=
∂∂
⋅×++∂∂
⋅+∂∂
tnf
tnf
nfmqnfnf
t
vBvE
xv
221 mv=ε
12
Main ideaGrades of N(=1000) students{x1, x2, ・・・ , xN}
idea of distribution, e.g.
exact expression
Relation between fD and fEHigh fD → {x1, x2, ・・・} is denseLow fD → {x1, x2,・・・} is sparse
deviation standard:mean:
)Maxwellian(21exp
21)(
2
D
σ
σπσ
x
xxxf⎥⎥⎦
⎤
⎢⎢⎣
⎡⎟⎠⎞
⎜⎝⎛ −
−=
∫ ∫
∑∞
∞−
∞
∞−
=
==
−=
1)()(
)(1)(
ED
1E
dxxfdxxf
xxN
xfN
iiδ
13
f (v, x, t ) of B eq is like fDfE for B eq is expressed as
n
We can derive the laws governing the set {xi(t ), vi(t ): i=1,2,・・・} from B eq.
The laws determine{xi(t +Δt ), vi(t +Δt )}
using a given {xi(t ), vi(t )}The law is partly deterministic, partly stochastic.Let us consider electrons in E-field.Collision probability of electron in (t ,t +Δt ) is
Ng:gas number density, v : speed at t:energy at t, :total collision cross section
∑=
−−=N
iii tttf
1
33E ))(())((),,( xxvvxv δδ
)/2( mε=ε Tσ
tvNP Δ= )(Tgc εσ
14
In case of Pc=1/6, play dice.In case of no collision, xi(t +Δt ) and vi(t +Δt ) are
determined by solving the equation of motion
The equation is coupled with the field equation
through
where nj is a functional of sets {xi}jIf a collision occurs, we determine
(1) type of collision(elastic, exciting, ionizing)(2) post-collision velocity
These are the theoretical basis of PIC/MC.
),( tqdt
dm ii xEv=
0ερ
=⋅∇ E
species):( jnqj
jj ∑=ρ
15
3. EEDF of RF Ar Plasmas
General structure of Ar rf dischargeelectrode spacing = 25.4mm (fixed)p =25mTorrf =13.56MHzγ=0.1Vrf =200V
φ(z,t), Ez(z,t) ,ρ(z,t), ・・・
16
-3.0E+02
-2.0E+02
-1.0E+02
0.0E+00
1.0E+02
2.0E+02
3.0E+02
0 5 10 15 20 25
z (mm)
Pote
ntia
l (V
)
Time-ave.0π/2π3π/2
-5.0E-05
0.0E+00
5.0E-05
1.0E-04
1.5E-04
2.0E-04
0 5 10 15 20 25
z (mm)
Cha
rge
Den
sity
(C/m
3
0π/2π3π/2
-6.0E+04
-3.0E+04
0.0E+00
3.0E+04
6.0E+04
0 5 10 15 20 25
z (mm)
Ez (V
/m)
0π/2π3π/2
-1.0E+06
-5.0E+05
0.0E+00
5.0E+05
1.0E+06
0 5 10 15 20 25
z (mm)
Abs
orbe
d Po
wer
(W/m
3)
0π/2π3π/2
17
0.0E+00
2.0E+15
4.0E+15
6.0E+15
8.0E+15
1.0E+16
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
Time-ave.0π/2π3π/2
0.0E+00
2.0E+15
4.0E+15
6.0E+15
8.0E+15
1.0E+16
0 5 10 15 20 25
z (mm)
Ion
Den
sity
(1/m
3)
Time-ave.0π/2π3π/2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25
z (mm)
Tim
e-av
erag
ed V
alue
s (eV
Te
2〈ε_e〉/3
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0 5 10 15 20 25
z (mm)
Tim
e-av
erag
ed V
alue
s (eV
Ti
2〈ε_i〉/3
18
0.0E+00
1.0E+20
2.0E+20
3.0E+20
4.0E+20
5.0E+20
6.0E+20
0 5 10 15 20 25
z (mm)
Rea
ctio
n R
ate
(1/m
3/s)
IonizationExcitationCharge Exchange
-20
-15
-10
-5
0
5
0 10 20 30 40 50
Energy (eV)
ln{E
EDF
[eV
^(-3
/2)]}
Raw DataT1 = 0.5375 eVT2 = 2.708 eV
0.00
0.01
0.02
0.03
0 20 40 60 80 100 120
Energy (eV)
IED
F (1
/eV
)
19
Mechanism of electron heatingDrift velocity of electron at sheath edgeApplied voltage Sheath thickness Expanding sheath accelerates electrons.
tV ωϕϕ == ,sinrf
)sin1(max21 ϕδ −≅
)( 23
21 ππϕ ~=
20
Ar, 13.56 MHz, 25 mTorr, γi=0
0.0E+00
2.0E+15
4.0E+15
6.0E 15
0 5 10 15
z (mm)
Elec
tron
Den
sity
(1/m
Time-ave.0π/2π3π/2
← Sampling position of EEDF and drift velocity Wz
Forward
Backward
21
Ar, 13.56 MHz, 25 mTorr, γi=0
-6.0E+04
-3.0E+04
0.0E+00
0 5 10
z (mm
Ez (V
/m)
0π/2π3π/2
Forward
Backward
Sampling position of EEDF and drift velocity Wz
22
Ar, 13.56 MHz, 25 mTorr, γi=0
0.0E+00
1.0E+05
2.0E+05
3.0E+05
0.00 0.25 0.50 0.75 1.00
Normalized Phase t/T
|Wz|
(m/s)
ForwardBackward
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0 10 20 30 40
Energy (eV)
EED
F [e
V^(
-3/2
)]
ForwardBackward
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0 10 20 30 40
Energy (eV)
EED
F [e
V^(
-3/2
)]
ForwardBackward
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0 10 20 30 40
Energy (eV)
EED
F [e
V^(
-3/2
)]
ForwardBackward
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0 10 20 30 40
Energy (eV)EE
DF
[eV
^(-3
/2)]
ForwardBackward
π/2 π 3π/2
23
Effect of pressureAr, p =25, 50, 100, 150, 200mTorrf =13.56MHzVrf =200Vγ=0.1z =L/2 (L=25.4mm) for EEDF
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 50 100 150 200 250
Pressure (mTorr)
T1, T
2 (e
V)
T1T2
24
Consider two-temperature modelT1=low energy temperatureT2=high energy temperatureAs p→large, T1→large and T2→small
T1 governs overall temperature TeAs p→large, Te→large
0
1
2
3
4
0 5 10 15 20 25
z (mm)
Elec
tron
Tem
pera
ture
(eV
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
25
Two regions for R1: R2:As p→large, →smallHence, ionization frequency per electron → small
But, as p→large, e--Ar collision frequency → largeOverall effect is:
As p increases, ne→inc →dec →inc →inc
εεϕεφ )()( =)eV76.15(0 th =<< εε
εε <th)( 2Rφ
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
26
Effect on IEDF at electrode
0.00
0.02
0.04
0.06
0.08
0.10
0 20 40 60 80 100 120
Energy (eV)
IED
F (1
/eV
)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
27
Effect of frequencyAr, f=13.56, 20, 40, 60MHzp =25mTorrVrf =200Vγ= 0.1z =L/2 (L=25.4mm) for EEDF
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
13.56 MHz20 MHz40 MHz60 MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 10 20 30 40 50 60 70
Frequency (MHz)
T1, T
2 (e
V)
T1T2
28
As f→large, T1→large and T2→smallT1 governs overall temperature TeAs f→large, Te→large
0
1
2
3
4
0 5 10 15 20 25
z (mm)
Elec
tron
Tem
pera
ture
(eV
13.56 MHz20 MHz40 MHz60 MHz
29
Two energy regionsR1: R2:As f→large, →largeHence, ionization rate → large
)eV76.15(0 th =<< εεεε <th
)( 2Rφ
30
Overall effectAs f →large, ne→large
0.0E+00
2.0E+16
4.0E+16
6.0E+16
8.0E+16
1.0E+17
1.2E+17
1.4E+17
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3 13.56 MHz20 MHz40 MHz60 MHz
31
Effect of γ, secondary electron emission coefficientAr, γ=0, 0.1p =25mTorrVrf =200Vz =L/2 (L=25.4mm)EEDF has a high energy tail of secondary electrons.Hence, ionization rate increases.Therefore, ne increases.
1.0E-11
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 50 100 150 200 250
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
0.0E+00
2.0E+19
4.0E+19
6.0E+19
8.0E+19
1.0E+20
1.2E+20
1.4E+20
0 5 10 15 20 25
z (mm)
Ioni
zatio
n R
ate
(1/m
3/s
γi = 0γi = 0.1
32
Effect of position z on EEDFγ=0z = 5.8mm (sheath edge) z =L/2 (center of bulk)Sheath oscillation gives energy to electrons.
1.0E-10
1.0E-08
1.0E-06
1.0E-04
1.0E-02
1.0E+00
1.0E+02
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
BulkSheath
33
Ar, 13.56 MHz, 25 mTorr, γi=0
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0 5 10 15 20 25 30
Energy (eV)
EED
F [e
V^(
-3/2
)]
0π/2π3π/2
π/2 → π では,高エネルギー
領域側の電子数増加が顕著
π → 3π/2 では2 < ε < 25 eV 電子数増加顕著ε < 2 eV 電子数減少顕著
加熱された!
34
Ar, 13.56 MHz, 25 mTorr, γi=0
0.0E+00
2.0E+15
4.0E+15
6.0E+15
0 5 10 15
z (mm)
Elec
tron
Den
sity
(
0π/2π3π/2
π/2 → π において加熱される電子.
電界も強いので高エネルギーを有する.
π → 3π/2 において加熱される低エネルギー(<2eV)電子.電界が弱いので,加熱は比較的小さい.
35
Ar, 13.56 MHz, 25 mTorr, γi=0
-6.0E+04
-3.0E+04
0.0E+00
0 5 10
z (mm)
Ez (V
/m)
0π/2π3π/2
π/2の位相でシース中に侵入した電子が,今度はπ/2 → π でバルク側に,高電界で加速される
ために,高エネルギーを有する.
0 → πの位相では電界が無く,バルクと同等であるために2eV以下の低エネルギー電子が多い.π → 3π/2 では加熱されるが,電界が弱いので,
加熱は比較的小さい.
36
4. EEDF of RF CF4 plasmas
CF4 is used in plasma etchingSpecies in CF4 plasma
e-, F-, CF3-, F+, C+, CF+, CF2
+, CF3+
Electron-CF4 collision cross section (by H. Ito)
10-2 10-1 100 101 102 103
Electron Energy (eV)
10-3
10-2
10-1
100
101
102
Cros
s-Se
ctio
n (1
0-16 c
m2 )
Qm
Qv4
Qv3
Qv2×3
Qdn
Qi(CF3+)
Qi(CF2+)
Q i(CF+)
Qi(C+)
Qi(F+)
Qa(F-)
Qa(CF3- )
37
Structure of rf CF4 plasmap(CF4) =25mTorrf =13.56MHzVrf =200Vγ=0.1z =L/2 (L=25.4mm) for EEDFSheath is thick.
-6.0E+04
-3.0E+04
0.0E+00
3.0E+04
6.0E+04
0 5 10 15 20 25
z (mm)
Ez (V
/m)
0π/2π3π/2
-6.0E+04
-3.0E+04
0.0E+00
3.0E+04
6.0E+04
0 5 10 15 20 25
z (mm)
Ez (V
/m)
0π/2π3π/2
Ar CF4
38
Electron density is strongly time-modulated.Order of densities
CF3+ > F- > CF3
- > e- > CF2+
0.0E+00
1.0E+14
2.0E+14
3.0E+14
4.0E+14
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
0π/2π3π/2
0.0E+00
1.0E+15
2.0E+15
3.0E+15
4.0E+15
5.0E+15
0 5 10 15 20 25
z (mm)D
ensit
y (1
/m3)
CF3+CF2+CF+C+F+F-CF3-Electron
39
EEDF has a long high-energy tail
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0 5 10 15 20 25
z (mm)
Tem
pera
ture
(eV
)
CF3+ CF2+ CF+C+ F+ F-CF3- Electron
-20
-15
-10
-5
0
0 10 20 30 40 50
Energy (eV)ln
{EED
F [e
V^(
-3/2
)]}
Raw DataT1 =0.9236 eVT2 = 4.543 eV
40
Effect of pressurep =25, 50, 100, 150, 200mTorrf =13.56MHzVrf =200Vγ=0.1z =L/2 (L=25.4mm) for EEDF
As p increases, plasma changes:electronegative→electropositive →electronegativeTe (bulk): decrease→stationary→increasesheath→thinner
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
0 50 100 150 200 250
Pressure (mTorr)
Den
sity
(1/m
3)
0.0
1.0
2.0
3.0
4.0
Elec
tron
Tem
pera
ture
(eV
ElectronPositive IonNegative IonTe
-4.0E+04
-2.0E+04
0.0E+00
2.0E+04
4.0E+04
0 5 10 15 20 25
z (mm)
Ez (V
/m)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
ωt = 0
41
As p increases,electron density: increase→decreaseelectron temperature(sheath):opposite to bulk
0.0E+00
2.0E+15
4.0E+15
6.0E+15
8.0E+15
1.0E+16
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0
5
10
15
20
0 5 10 15 20 25
z (mm)El
ectro
n Te
mpe
ratu
re (e
V
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
42
density(CF3+ , F- , CF3
- )→increase
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
3.0E+16
0 5 10 15 20 25
z (mm)
CF3
+ D
ensit
y (1
/m3)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
3.0E+16
0 5 10 15 20 25
z (mm)
F- D
ensit
y (1
/m3)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0.0E+00
5.0E+15
1.0E+16
1.5E+16
2.0E+16
2.5E+16
3.0E+16
0 5 10 15 20 25
z (mm)
CF3
- Den
sity
(1/m
3)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
43
temperature(CF3+)→increases near the electrode(E-field)
temperature(F- , CF3- )→decrease in the sheath(collisional loss)
0
2
4
6
8
10
0 5 10 15 20 25
z (mm)
CF3
+ Te
mpe
ratu
re (e
V) 25 mTorr
50 mTorr100 mTorr150 mTorr200 mTorr
0
2
4
6
8
0 5 10 15 20 25
z (mm)
F- T
empe
ratu
re (e
V)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0
2
4
6
8
0 5 10 15 20 25
z (mm)
CF3
- Tem
pera
ture
(eV
)
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
44
As p increases,two-temperature: T1→sudden increase at 150mTorr
(transition to electronegative)T2→small change, compared with T1
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40
Energy (eV)
EED
F [e
V^(
-3/2
)]
25 mTorr50 mTorr100 mTorr150 mTorr200 mTorr
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 50 100 150 200 250
Pressure (mTorr)
T1, T
2 (e
V)
T1T2
45
-6.0E+04
-3.0E+04
0.0E+00
3.0E+04
6.0E+04
0 5 10 15 20 25
z (mm)
Ez (V
/m)
13.56 MHz20 MHz40 MHz60 MHz
Effect of frequencyf =13.56, 20, 40, 60MHzp =25mTorrVrf =200Vγ=0.1z =L/2 (L=25.4mm) for EEDF
As f increases, plasma changes:sheath→thinner
ωt = 0
46
As f increases, electronegative → electropositive plasmaOnly at 13.56MHz, plasma is electronegative!
1.0E+14
1.0E+15
1.0E+16
1.0E+17
0 10 20 30 40 50 60 70
Frequency (MHz)
Den
sity
(1/m
3)
0.0
1.0
2.0
3.0
4.0
Elec
tron
Tem
pera
ture
(eV
ElectronPositive IonNegative IonTe
47
electronegative→electropositive at f=20MHz
0.0E+00
2.0E+16
4.0E+16
6.0E+16
8.0E+16
0 5 10 15 20 25
z (mm)D
ensit
y (1
/m3)
CF3+ CF2+ CF+C+ F+ F-CF3- Electron
0.0E+00
1.0E+15
2.0E+15
3.0E+15
4.0E+15
5.0E+15
0 5 10 15 20 25
z (mm)
Den
sity
(1/m
3)
CF3+CF2+CF+C+F+F-CF3-Electron
13.56 MHz 60 MHz
48
As f increases,electron and positive ion increase,negative ion density slightly changes in bulk.
0.0E+00
2.0E+16
4.0E+16
6.0E+16
8.0E+16
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
313.56 MHz (×10)20 MHz40 MHz60 MHz
0.0E+00
2.0E+16
4.0E+16
6.0E+16
8.0E+16
0 5 10 15 20 25
z (mm)
Posit
ive
Ion
Den
sity
(1/m
3
13.56 MHz20 MHz40 MHz60 MHz
0.0E+00
1.0E+15
2.0E+15
3.0E+15
4.0E+15
5.0E+15
6.0E+15
0 5 10 15 20 25
z (mm)
Neg
ativ
e Io
n D
ensit
y (1
/m3
13.56 MHz20 MHz40 MHz60 MHz
49
As f increases,T1 suddenly decreases, and hence so does Te.Change of T2 is small.
0
1
2
3
4
5
0 5 10 15 20 25
z (mm)
Elec
tron
Tem
pera
ture
(eV
13.56 MHz20 MHz40 MHz60 MHz
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
13.56 MHz20 MHz40 MHz60 MHz
0.0
1.0
2.0
3.0
4.0
5.0
0 10 20 30 40 50 60 70
Frequency (MHz)
T1, T
2 (e
V)
T1T2
50
As f increases,time modulation of ne→small
0.0E+00
1.0E+14
2.0E+14
3.0E+14
4.0E+14
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
0π/2π3π/2
13.56 MHz 60 MHz
0.0E+00
2.0E+16
4.0E+16
6.0E+16
8.0E+16
0 5 10 15 20 25
z (mm)El
ectro
n D
ensit
y (1
/m3
0π/2π3π/2
51
Comparison with ArOverall Te → decrease one order (CF4)cf. → increase by 2.6 times (Ar)
0.0
1.0
2.0
3.0
4.0
0 5 10 15 20 25
z (mm)
Tim
e-av
erag
ed V
alue
s (eV
Te
2〈ε_e〉/3
0.0
1.0
2.0
3.0
4.0
0 5 10 15 20 25
z (mm)
Tim
e-av
erag
ed V
alue
s (eV
Te
2〈ε_e〉/3
13.56 MHz 60 MHz
52
Effect of γ, secondary electron emission coefficientCF4γ=0, 0.1p(CF4) =25mTorrVrf =200Vz =L/2 (L=25.4mm)
EEDF has a high energy tail of secondary electrons.Hence, ionization rate increases,Therefore, ne increases.
0.0E+00
5.0E+13
1.0E+14
1.5E+14
2.0E+14
2.5E+14
3.0E+14
0 5 10 15 20 25
z (mm)
Elec
tron
Den
sity
(1/m
3
γi = 0γi = 0.1
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 50 100 150 200 250
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
53
As γ increases,electrons contributing to electron attachment (5-9 eV) decrease, and hence negative ion decreases, so does positive ion.
0.0E+00
1.0E+15
2.0E+15
3.0E+15
4.0E+15
5.0E+15
6.0E+15
0 5 10 15 20 25
z (mm)
Posit
ive
Ion
Den
sity
(1/m
3 γi = 0γi = 0.1
0.0E+00
1.0E+15
2.0E+15
3.0E+15
4.0E+15
5.0E+15
6.0E+15
0 5 10 15 20 25
z (mm)
Neg
ativ
e Io
n D
ensit
y (1
/m3 γi = 0
γi = 0.1
1.0E-08
1.0E-06
1.0E-04
1.0E-02
1.0E+00
0 10 20 30 40 50 60
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
54
For larger γ,T1 becomes smaller, and hence so does Te.
1.0E-08
1.0E-06
1.0E-04
1.0E-02
1.0E+00
0 10 20 30 40 50 60
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
0.0
1.0
2.0
3.0
4.0
5.0
0.0 0.1
γi
T1, T
2 (e
V)
T1T2
0
1
2
3
4
5
0 5 10 15 20 25
z (mm)
Elec
tron
Tem
pera
ture
(eV
γi = 0γi = 0.1
55
Effect of γ on EEDF is larger for electronegative plasma.Flux of emitted electrons are nearly the same for electropositive and electronegative plasmas.However, the flux has a stronger effect on EEDF in electronegative plasma because its electron density is much smaller than that ofelectropositive plasma.
Ar CF4
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
1.0E-09
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0 10 20 30 40 50 60
Energy (eV)
EED
F [e
V^(
-3/2
)]
γi = 0γi = 0.1
56
Acknowledgements
The speaker wishes to express his sincere thanks to
Dr. Kazuki Denpoh, Tokyo Electron AT Ltd.
for presenting the simulation data used in this lecture.Also the speaker expresses thanks to
Mr. Toshihiko Iwao, Graduate school, Tohoku Univ., Japan
for helping him with the preparation of this lecture.