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EE 587 SoC Design & Test Partha Pande School of EECS Washington State University [email protected]

EE 587 SoC Design & Test Partha Pande School of EECS Washington State University [email protected]

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Page 1: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

EE 587SoC Design & Test

Partha PandeSchool of EECSWashington State [email protected]

Page 2: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

SoC Physical Design Issues

Wire Inductance

Page 3: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Wire Inductance

Wide wires in clock distribution & upper level metal layers These wires have low resistance Exhibit significant inductive effects New materials with low-resistance interconnect

Page 4: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductance

Complete interconnect model should include inductance

With increasing frequency and a decrease in resistance due to wide wires and the use of copper, inductance will begin to influence clocks/busses:

Z = R + jL

Inductance, by definition, is for a loop not a wire

inductance of a wire in an IC requires knowledge of return path(s)

inductance extraction for a whole chip is virtually impossible...

R L C

V=Ldidt

V+ -i

Page 5: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Evolution of Interconnect Model

Page 6: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Transmission Line Model

Follow Board Notes

Page 7: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductance Effects

Lumped RLC line

R L C

Treat RC problem as a resistive divider:

VO = Zo Vin

Zt

Zo

Zt

=

1 sC

1sC + (R + sL)

=1

s2LC + sRC + 1

VOVin

Poles are P1,2 =nsqrt(

=n

2

s2 + s2n + n2

n = 1/sqrt(LC)

=RC/2sqrt(LC) = damping factor

> 1 we have two real poles (RC effects) < 1 we have two complex poles (RLC effects)

+-

Page 8: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductance Effects

Follow board notes

Page 9: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Other Inductance Effects

For most gates Ron is in the order of K so typically R >> jL

response is dominant by RC delay for most signals Only the large drivers have a small enough Ron to allow the

inductance to control the dynamic response

clocks busses

For clocks, self-inductance term can dominate the response (especially if shielding is used)

For busses, mutual inductance term dominates and creates noise events that could cause malfunction

For power supplies, inductance can also be a problem due to the Ldi/dt drop (in addition to the IR drop) as supplies scale down

Page 10: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Capacitive and Inductive Noise

R L C

R L C

R L C

For most wires, jL < (Rwire+Rdrive) for the frequency and R of interest. So, for delay, L is not a big issue currently.

But L can be 20 - 30% of R so noise may be seen on adjacent line (mutual coupling)

Return path current

+ -

- +

Dangerous scenario is a combinationof localized capacitive coupling noise and long range mutual inductive coupling noise

Double noise events

R L C

R L C

R L C

Page 11: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Gate Driving an RLC Transmission Line

Page 12: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Propagation Delay

lineion transmisslossless a of impedence sticCharacterit

tol C

LZ

resistance wireand gate he through tecapacitanc load thechargingfor constant time

)( trtLC RRCL

lineion transmiss theacross gpropagatin signals theofflight of Time

ttf CL

Rt=Rl, Lt=Ll, Ct=Cl, CT=CL/Ct

Page 13: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Propagation Delay (Cont’d)

50% propagation delay

npd w

et

)48.1(35.19.2

• where ζ and wn are the damping factor and natural frequency of the circuit

•Function of both the interconnect and gate impedance

)(

1

Ltt

nCCL

w

f

C

ol

tr

ol

t

T

L

Z

R

Z

R

C

212

1

Page 14: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Propagation Delay (Cont’d)

If the ratio of the total resistance of the line to the lossless characteristic impedance increases, inductive effects can be neglected

If the ratio of the driver resistance to the lossless characteristic impedance increases, inductive effects can be neglected

If the ratio between the time required to charge the load capacitance through the gate and wire resistance to the time of fight increase then inductive effects can be neglected

Page 15: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Effect of inductance on Signal Delay

Page 16: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Dependence of Delay on Interconnection Length

If the gate parasitic impedances (CL and Rtr ) are neglected then the propagation delay can be expressed as

237.0 RCl

•For the limiting case where L →0, the above equation reduces to

•For the limiting case R ->0, the delay is given by LCl

237.0 RCl

Page 17: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Repeater Insertion revisited

•Lower repeater size and less number of repeaters

•The amount of inductance effects present in an RLC line depends on the ratio between the RC and the LC time constants of the line

•As Inductance effect increases the LC time constant dominates the RC time constant and the delay of the line changes from a quadratic to a linear dependence on the line length.

•Optimum number of repeaters for the minimum propagation delay decreases

Page 18: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductance & Power Dissipation

The dynamic power is given as

Increasing inductance effects results in fewer number of repeaters as well as smaller repeater size

Significantly reduces total capacitance

Faster rise time results in lower short-circuit power

fCVP DDdyn2

Page 19: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductance Extraction

Inductance can only be defined for a closed current loop The inductance of the loop is proportional to the area of the loop At low frequency resistive impedance dominates Current uses as many returns as possible to have parallel resistances Situation is different at higher frequencies

Page 20: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Mutual Inductance

Causes extra noise and delay effects

dt

diL

dt

diMv

dt

diM

dt

diLv

22

12

2111

Page 21: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Inductive Noise in a bus

Physically, a wide bus with all the lines switching in the same direction behaves as one wide line

Hence, the effective inductance of a line that is part of a bus is far larger than the self-inductance of that line

LC time constant of the line becomes much larger

Page 22: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

L di/dt effects on the Power Supply

Page 23: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Antenna Effects

As each metal layer is placed on the chip during fabrication, charge builds up on the metal layers due to CMP1, etc.

If too much charge accumulates on gate of MOS transistor, it could damage the oxide and short the gate to the bulk terminal

Higher levels of metal accumulate more charge so they are more troublesome (i.e., metal 5 is worse than metal 1)

Need to discharge metal lines during processing sequence to avoid transistor damage (becomes a design/layout issue)

+ + + + + + + + + + + + + + + + + + + + + + + + + + +

+ + + + + + + + + + +

This transistor could be damaged

Metal 1

Poly

Metal 2

AntennaRatio =

Areawire

Areagate

1. CMP is chemical mechanical polishing which is used to planarize each layer before the next layer is placed on the wafer.

Page 24: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Preventing Antenna Effects

A number of different approaches for antenna repairs: Diode Insertion - Make sure all metal lines are connected to

diffusion somewhere to discharge the metal lines during fabrication

n+

+ + + + + + + + + + + + + + + + + + + + + + + + + + +

Antenna diode

p

-diodes costs area- need to optimize number and location- causes problems for design verification tool

Page 25: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Preventing Antenna Effects

Note that there are always diodes connecting to source/drain regions of all transistors and charge on each layer is drained before next layer is added…so why are we worried?

Gate input of next device may not be connected to a diode until it’s too late…charge accumulation on metal exceeds threshold

Should put antennadiode here.

Keep area of upper layer metalssmall near next transistor

Page 26: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Preventing Antenna Effects

Second approach is to add buffers to interconnect to break up long wire routes and provide more gate area for antenna ratio

Third approach is to use metal jumpers to from one layer of metal to another

Metal 1/polish

vias (charge removed)

Metal2/polish

+ + + + + + + + + + + + + + + + + + + + + + + + + + + + ++++++++ + + + + + + + +

+ + + +

Page 27: EE 587 SoC Design & Test Partha Pande School of EECS Washington State University pande@eecs.wsu.edu

Class Presentation

The first class presentation assignment will be posted soon. One of you has to present the basic concepts discussed in the

paper to the class Presentation time ~20 minutes After the presentation everybody has to participate in the

discussion