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EDITORIAL The Conference on Ion implantation Technology held in Kyoto International Conference Hall, Japan between June 7 and 10, 1988 was the seventh in a series of conferences begun in Salford (1977) and continued in Trento (1978) Kingston (1980), Berchtesgaden (1982) Burlington (1984), and Berkeley (1986). The scope of the Kyoto conference was especially broad, including a wide coverage of ion beam technologies from ion beam deposition in the low energy range (ev) to very high energy implantation (MeV). Also included were the traditional conference topics of process requirements and the design and performance of ion implantation equipment. Over 450 participants from 22 countries attended. A total of 253 oral and poster papers were presented during seven technical sessions and a plenary session. Five plenary overviews and 52 invited talks, including several keynote papers at each technical session, covered the conference’s topical themes. Several other activities accompanied the conference’s technical sessions. As a section of IIT’88, the Workshop on Characterization of Implantation in Silicon was held June 2-3, 1988 in Shanghai, China. Selected papers presented in this workshop are also included in the Proceedings. They are indicated by a footnote on the papers. A two-day technical school on Ion Implantation Science and Technology was held before the conference (June 5-6), and an equipment exhibition was held during the conference. The equipment exhibition gave participants practical information on equipment and special apparatus for various kinds of ion beam processes and related technologies in addition to business information. The success of this conference can be attributed to the cooperation of the participants and the members of Conference Committees, generous donations from over a dozen allied companies in ion impl~tation technology, and grants from the Comm~orative Association for the Japan World Exposi- tion, the Foundation for the Promotion of Ion Engineering, Japan and the Nipon Itagarasu Zairyokogaku Jyoseikai. The success of this conference is also due to the excellent cooperation of the authors, the members of Conference Committees, and the staff of the Conference secretariate. I gratefully acknowledge the above mentioned persons for their help in making the conference successful and also the support for publication of the proceedings by North-Holland Physics Publishing. The next conference in this series will be held at the University of Surrey, Guildford, UK from Sunday 29th to Thursday 2nd August 1990 inclusive. T. TAKAGI Guest Editor

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EDITORIAL

The Conference on Ion implantation Technology held in Kyoto International Conference Hall, Japan between June 7 and 10, 1988 was the seventh in a series of conferences begun in Salford (1977) and continued in Trento (1978) Kingston (1980), Berchtesgaden (1982) Burlington (1984), and Berkeley (1986).

The scope of the Kyoto conference was especially broad, including a wide coverage of ion beam technologies from ion beam deposition in the low energy range (ev) to very high energy implantation (MeV). Also included were the traditional conference topics of process requirements and the design and performance of ion implantation equipment.

Over 450 participants from 22 countries attended. A total of 253 oral and poster papers were presented during seven technical sessions and a plenary session. Five plenary overviews and 52 invited talks, including several keynote papers at each technical session, covered the conference’s topical themes.

Several other activities accompanied the conference’s technical sessions. As a section of IIT’88, the Workshop on Characterization of Implantation in Silicon was held June 2-3, 1988 in Shanghai, China. Selected papers presented in this workshop are also included in the Proceedings. They are indicated by a footnote on the papers. A two-day technical school on Ion Implantation Science and Technology was held before the conference (June 5-6), and an equipment exhibition was held during the conference. The equipment exhibition gave participants practical information on equipment and special apparatus for various kinds of ion beam processes and related technologies in addition to business information.

The success of this conference can be attributed to the cooperation of the participants and the members of Conference Committees, generous donations from over a dozen allied companies in ion impl~tation technology, and grants from the Comm~orative Association for the Japan World Exposi- tion, the Foundation for the Promotion of Ion Engineering, Japan and the Nipon Itagarasu Zairyokogaku Jyoseikai.

The success of this conference is also due to the excellent cooperation of the authors, the members of Conference Committees, and the staff of the Conference secretariate. I gratefully acknowledge the above mentioned persons for their help in making the conference successful and also the support for publication of the proceedings by North-Holland Physics Publishing.

The next conference in this series will be held at the University of Surrey, Guildford, UK from Sunday 29th to Thursday 2nd August 1990 inclusive.

T. TAKAGI Guest Editor