NONVOLATILE ELECTRONICS, INC.

MagIC

Magnetic And Silicon Materials

On One Integrated Circuit

NONVOLATILE ELECTRONICS, INC.

• NVE Leads GMR Technology/Applications– 11 years Experience (Since Founding in 1989)– Over $30M Development

• Competitive Government Contracts - $20M• Commercial Customers - $4.6M• Private Investment - $4.5M

– 32 Patents Issued, Pending, Or Licensed • World’s First GMR Products (1995)• World’s First GMR MagICTM Product (1997)• ISO 9001 qualified

NVE is The World Leader In MagICTM

NONVOLATILE ELECTRONICS, INC.

• Sensors - NVE Established Products– 20,000 units per month (1999)– Wheel Speed and Position (Platform qualified for ABS)– Electric Current

• Isolators - NVE New Products– Communications– Industrial Controls

• Nonvolatile Memory - NVE Next Generation− Data Security without Power– Magnetoresistive Random Access Memory (MRAM)

NONVOLATILE ELECTRONICS, INC.

Isolator: Design to Test

Silicon Circuit Design

GMR, Metalisation, etc Wafer Probe

Die Packaging

0.5um CMOS

Final Test

NVE TSMC

NVE (USTC) NVE

NVECEI

NONVOLATILE ELECTRONICS, INC.

R

~8x10-9m

GMRMetallic Thin Films:

Magnetic / Non-Magnetic

NONVOLATILE ELECTRONICS, INC.

IL710HIGH SPEED DIGITAL ISOLATOR

TRUTH TABLE

OEVIN VO

LHLH

LLHH

LHZZ

1

H2

3

4 5

6

7

8VDD1 VDD2

VI

VO

GND1 GND2

NC

VOE

IsolationBarrier

NONVOLATILE ELECTRONICS, INC.

Spin Valve Resistors

Field Producing Coil

IinMagnetic Field - H

( H α Iin )

Isolation Dielectric

Memory Mode Digital Spin Valve Isolator Structure

Memory Mode Digital Spin Valve Isolator Schematic

Spin Valve Resistor Bridge

I in

Field Producing Coil

Galvanic Isolation by Thick Film Dielectric

Signal Transmitted by Magnetic Field

H Vspin - valve

Vcc

NONVOLATILE ELECTRONICS, INC.

Isolated Output VoltageVin

Input Voltage Signal

Schematic of Memory Mode Spin Valve Digital Signal Isolator

TimeMag Field - H ( α Iin)

Vspin valve (α Rout)

Spin Valve Response

IinOutput Amp Circuit

Coil Current Signal

V to I Driver Circuit

Vout

TimeTime

Coil Generates Magnetic Field

Remnant Hi-State

RemnantLo-State

Magnetoresistance Response of Actual Patterned Spin Valve Isolator Structure

-150

-100

-50

0

50

100

-60 -40 -20 0 20 40 60

Coil Input Current (mA) - Proportional to Magnetic Field H

Brid

ge O

ffset

Vol

tage

- m

V

forward tracereverse trace

GMR Isolator Transfer Function

NONVOLATILE ELECTRONICS, INC.

Die to Die Wirebonds

Die 1 - Driver Circuit

Die 2 - Isolator Structure and Integrated Amplifier

SOIC Package

NONVOLATILE ELECTRONICS, INC.

Magnetic Isolator - Schematic

NONVOLATILE ELECTRONICS, INC.

Die Photograph4-channel IsolatorSize: 1.1mm x 1.9mm

NONVOLATILE ELECTRONICS, INC.

Propagation Delay

Reference

IL710

HCPL-0720

Reference

IL710

HCPL-0720

NONVOLATILE ELECTRONICS, INC.

Positive Edge Skew

2 x HCPL-0720 2 x IL710

NONVOLATILE ELECTRONICS, INC.

Negative Edge Skew

2 x HCPL-0720 2 x IL710

NONVOLATILE ELECTRONICS, INC.

No More Speed Problems

• 4 x Speed • 2 x Transient Immunity

• 1/4 Prop Delay • 1/5 Skew• 1/4 PWD

NONVOLATILE ELECTRONICS, INC.

RS-485

75ALS176

• 16 Pin SOP Wide Body Package• Proprietary Bi-directional GMR Isolator ASIC • TI 75ALS176 RS-485 Transceiver

ProprietaryBi-directional GMR

Isolator ASICsTI RS-485 Driver

Widebody SOP 16 Split Lead-

frame

GMR Isolated RS 485 Module

NONVOLATILE ELECTRONICS, INC.

1

H2

3

4 5

6

7

8VDD1 VDD2

VI

VO

GND1 GND2

NC

VOE

IsolationBarrier

IL711

GA

LVA

NIC

ISO

LATI

ON

1IN

2IN

1OUT

2OUT

IL712

GA

LVA

NIC

ISO

LATI

ON

2IN

1IN 1OUT

2OUT

RTSAS

GA

LVA

NIC

ISO

LATI

ON

TxD

RxDA

B

RTS DE

D

R

Y

Z

RE

GA

LVA

NIC

ISO

LATI

ON

RTS

TxD

RxD

RTSAS

A

B

DE

D

R

IL485

IL422

First New Products

IL710

REN

1IN

2IN

1OUT

2OUT

3IN

4IN

3OUT

4OUT

IL715

1IN

2IN

1OUT

2OUT

4IN

3IN

4OUT

3OUT

IL716

4IN

3IN 3OUT

4OUT

1IN

2IN

1OUT

2OUT

IL717

NONVOLATILE ELECTRONICS, INC.

External Magnetic Field Sensitivity

8.0*2 RI sinαH

π ≈ (Where I is amps, R is cm & H is Gauss)

Current = 500A

H field (r=2cm) ~ 50 Gauss

• Tolerant to 50 Gauss normal to plane of device• Design improvements have increased it to ~ 100 Gauss• Field produced by current is not be a problem• Equation is as follow:

• Current Draw (amps) Safe Separation Distance500 2.0 cm.10 0.4 mm

Hmax = 50Gauss

Hmax = 50 Gausssin α

α