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E*:c Low P
Note : -
nmE
1)
2)3)
D)Evaluate [* e-ztsin3t dt.. , .,,,.
t;Q.2) A) Prove that/_r(r) : "l: cosx (6)
, \.nx
B) Find an analytic function f(z) whose imagjnary part is e-n(ystryy l xcosy) (6)
C) Obtain Fourier series for f(x) : t +2a -r 4x < 0fi
:
,fr-:-.12 111
Hence deduce that i : i * #A *. , .. (g)
Q.3) A) Show that p = (Zxyzz)i + (xz22 * zcosyz)j * (2x2yz * ycosyz)k ,is a
conservative field. Find its scalar potential E such that F : Yrpand hence, find the
work done by F in displacing a particle from A(0,0,l) toB(l,n/4,2)
along straight line AB (6)
B) Show that the set of functions:fi(x) = 1,fz(x) = x are orthogonal over
(-1, 1). Determine the constants a and b such that the function fr(x) = -L * ax * bxz
is orthogonal to both fl and f2onthat interval (6)
TURN OVER
1
A67 7 OF 26CF 24E87 7 F,689 58C4E I 3AB4DA
( 3 Hours)
Question number 1 is compulsory.Attempt any three questions from theFigures to the right indicate full
B) Find half range Fourier sine series for
C)IfF = xyez'i* xyzcoszj *
c)Find OLa{tosH-"J}
1iil L{(e-t cost.H(t * n)}
' ',.', .t
"',,,..
. : i' , t -'' :..
-.: .:, 1 , -.';-' ::
Q.5) A) Using Gauss Divergence,theopem, prove that lJ. (|, .rr'i| i?xd.j'.+|z?irl(). Fds: *,., , -,,. _ ,
--t - ;. :i:,;.:, ',r;:,,,, -';:' ' 72
where S is the par.f of the'sph* ,, 1 y-r" i.ai.i l.na rU;"1,e;i bl"r.. (6)
B)Provethat/3(x) +3Jo@) + 4J'd'@) = 0 l,' i,, '
C) Solve (D3-2D2+5D)y : 0, with y(0):0, y'(0)=0 and y"(0): l,
Q.6) A) Evaluate by Green's theorem to, I11] dx *)Oq>where C is the
the boundary of the region define by x = l,xi 4, y: I and y: ,l-x
B) Find the bilinear transformation which maps the points z: l, i, -lonto points w: i, 0 -i
C) Find Fourier cosine integral representation for (*) : C-o* , x > 0
Hence, showthat If #a, =!e-*,x) 0
(6)
(8)
(6)
(6)
(8)
---x---x---x---
2
4:67 7 OF 26CF 24887 7 r,6895 8C4E I 3 AB4DA
T1523 I T1494
N.B: 1. Question no.1 is compulsory.2. From Q2 to Q6 solve any three.
Ql. Attempt any four.a. Draw Maxwell Bridge and list applications.b. List different thermocouples and their typical range.c. Short note on Q meter.d. Define transfer. List different types of transducers. _-,
e. Draw a neat and labeled diagram for LVDT. , ) .
Q2. a. Explain FET electronic voltmeter with neat diagr,am.
[Time:3 Hours]
Please check whether you have got the right question paper.
.+','i'
20b. Explain single channel and multichannel data acquisition system with neat labeled separate block diagrams.
Q3, a. Explain following approaches of temperature measurements: RTD, Thermisters, and Thermocouples.b. Draw block diagram of CRO. Also draw block diagram of DSO; No explanation needed. List applications of DSO.
Q4. a. Explain in detail Dead Weight Testing with neat labeled diagram.b. Draw and explain Schering bridge.
Q5. a. Explain frequency and phase measurement with oscilloscope.b, Explain in detail types of errors in measurement system.
20
20
20
20Q6 Short note on
a. Strain Gauges
b. Electromagnetic flow meterc. Rota meterd. Lissajous Figures
.i
F97BF8CF49 4 AE2EISF 297 DC3 42266A38
:
.l
ED
sFm Ir {Ba-s EA RX flAAY L?LT-
Q.P. Code :10591
[Time:3 Hours]
Please check whether you have got the right question paper"
1. Question -1 is comPulsorY,
2. Solve any THREE from remaining questions.
3. Assume suitable if it is required.
u.{ sl r+
I Marks:80]
N.B:
a) How Zener diode is different than normal diode?
b) Explain nonlinear effects in MOSFET?
c) Draw and explain Ebers. moll model of BJT
d) Compare BIT and IGBT
a) Draw the graph of built is potential Vbi for a symmetrical si diode (Na = Nd) at T = 300'k. over the range
1014 < Na ( 101e cm-3.
b) Explain working of BJT considering all possible modes of operation.
a) Derive the equation of threshold Voltage V Th of n channel Enhancement MOSFET
b) Neatly sketch all FET characteristics. Explain how var"ious paran'leters can be determined from the
characteristics. State drain current equation of FET.
a) Sketch and explain Tunneldiode characteristics. Explain applications of this diode
b) Explain construction, working and characteristics of D - MOSFET
a) Expiain [row optical device are classified? Explain any one photodetector in detail"
b) Draw and explain construction and characteristics o{ UJT. State its applieations.
Write notes on any TWO of the follo'"ving.
a) HBT
b) Solar Cell.
c) SCR
d) Diac and Triac
(s)
(s)(s)IC\
(10)
(10)
( 10)( 10)
( 10)( i0)
(i0)( 10)
{)o\
tr i AC8 83926 I EA (lfi F C l-s I I F 7Ir l)5 5 9 8 E 1 e
<f sE-M -lltT1523 tT1492
ETRX CBC
DIGITAL CIRC]UITS AND DtrSIGN
J ,vrA\ zatlz+[oslzat*
I Marks:80]
Q.P. Code :104O2
[Time: 3 Hours]
Please check whether you have got the right question paper.N.B: 1. Qucstion No.1 is Compulsorl,
2. Solvc any three from the ren'raining five questions.3. Drarv neat logic diagram and assume suitable data lvherever nccessary.
Q.l a. Two inputs TTL NAND gateb. Explain ring counterc' Drarv truth table and logic diagram of Fuli Subtraotor using half Subtractors and gatesd. Explain the characteristics parameters of logic families
Q.2 a. Analyzethe clockcd synchronous machine given below. Write excitation equations,excitation/transition table and state/ output table (Use state names A-D for Q1-Q-2:00-l l)
10
05050505
101010
W
Q.3
Q.1 a. Implement follorving function using 4:l MUX and NAND gatesP(A,B,C,D):}n( 1,2,6,7,8, I 0, 1 3, 1 4)b. Explain IC 74194 working in derail u,ith appiications
Q.5 a. Usc K-urap to reduce fbllowing firnction and then implement it by NOR gates.F :rN,t(0, 1,1,J,8,11, 1 2, l4)+d(2,5,6)
10
10
10
10b. Eiimrnate redundant states and drarv the reduced statc cli
Next Statc OutputYX:O X:1
A .:B C iB D C 0C F E 0D E B IE B C iF' C E 0G F (; 0
i32 I 695U20842U 1 55F0538 i 1 8-5FI r)I 33
Presentstate
T1523 1T1492 DIGITAL CIRCUITS AND DESIGN e)
20Q.6 Write short notes on any three1. N4aster slave JK Flip Flop2. Write a VHDL code for full addcr3. Stuck at '0' and '1' faults4. CPLD and IjPGA architecturc block diagram
332 1 695820842B l 55ts053U 1 I 85Ir I Dl 33
,/ t ,"7 fix Qol slta
N.B.:
T1523 tTt493
I s*
REVISED COURSE(03 Hours)
l) Question number one is compulsory.2) Attempt any three questions out of remaining five questio4t',-.3) Figures to the right indicate full marks.4) Assume suitable data if reqr.rired.5) Use Smith chart for transmission line problem
L a) Find poies and zeros of the impedance of tlie follorving netrvork"
t"- -- r*'-,L.l ri!rr".,;;-t."./ l.
5)
9_
5)
5)
5)
10)
.-
:3O. 5)
s)
;:{.:i} **
092 irljt Ir L/ 7 D1)9(r EllE2 79('.Irl)r1L'503IIR D6
TURI{ OVER
,.l*)
.. . ':
])
(u
Compute the Y paramcters.
r -r" i
i: f.iii !
].^li ir,- {i'' \.,1-,j:
1
!
1
2. a) For the netu'ork shou'n determine the current i (t) when the switch s is closed at F0 u,ithzero initial conditions using Laplace lransform.
if'"il*itr*
7
3. a) Design a short circuit shunt stub match for 21150 -200j (f)) for a iine of Zo:100 O and
Frequency at f : 20 MHz using Smith chart.
b) Find the current I, using superposition theorem.
,{ --tr-ll
c) Determine s)v1
I1
a' +-I
,{\
I
{,
I
-.1.r
l0)
5)
5)
r- f*$r\r\r-I '- 6*'r-I
Lnv =-
urrd Lll
z (r)
U92 L,F E Ir I 7 1 DD9 6EBE279C F D3C 50.] BBD6
TURN OVER
T1523 1T1493 S.E.(ELECTRONICS ENGGXSEM IID(CBSGS)CIRCUIT THEORY
Q.,P.,Code: 13675
10)
...5),
4. a) Test u,hether follou'ing functions arc a positive real function .
10.r4+12s'+2
2s3 + 2s
r?1
b) Use continued fraction expansion method to check whether the given polyromiais is
Hurwilz or not.p(s) : s7+2s6+2s5+s1+4s3+8s2+8s +4
c) Realize Caur first form of the follorving L C impedance function.
(
t
T152-1 / T1493 S.E.(ELECTRONICS ENGGXSEM IID(CBSGS)CIRCUIT THEORY
Q. P. Code :
aJ
5. a) In the netu,ork shor,r,n, the switch is changed from position I to position 2 at t=0.
di d'iSteady state condition having reached before sri'itching. Find the value of i, - and -;dt tlt-
al t=0 -
$" r:\r
b) Determine ir parameters of the netu'ork given.
' .i--l '"t .. \. .) :'' . 'L'
'\1, "{;l!'..*>
1367s
10)
i
\, .t-
s)
s)
es)
s)
5)
5)
09IEIrSE I IIDl)e(rFrllI:279L irDi( 50IllBD6
1J,{ {:lr'.