E IEEE Electron D Devices Society S Newsletterthe needs and interests of bipolar and BiCMOS engineers. The conference covers the design, performance, fabrication, testing and application

EEDDSS

Contributions WelcomeReaders are encouraged to submit news items con-cerning the Society and its members. Please sendyour ideas/articles directly to either the Editor-in-Chief or appropriate Editor. All contact informationis listed on the back cover page. Whenever possi-ble, e-mail is the preferred form of submission.

Newsletter Deadlines

Issue Due DateJanuary October 1stApril January 1stJuly April 1stOctober July 1st

July 2000Vol. 7, No. 3 ISSN:1074 1879

Editor-in-Chief: Krishna Shenai

®

2000 Bipolar/BiCMOS Circuits andTechnology Meeting (BCTM)

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at the address given on the back cover page.

(continued on page 3)

The 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) willbe held in Minneapolis, Minnesota from September 24 to September 26,2000. BCTM provides a forum for the technical communication focused onthe needs and interests of bipolar and BiCMOS engineers. The conferencecovers the design, performance, fabrication, testing and application of bipo-lar, BiCMOS and BiFET integrated circuits. This year’s conference includes ashort course, an evening panel session, several invited papers, a vendor exhi-bition, and a best student paper award.

The conference starts off with a Short Course on Sunday, September 24th.The course is divided into three sessions, each two hours in length. The firstsession will address the design, modeling and fabrication of on-chipRF/microwave passives. The second session will discuss the optimization anddesign of advanced epitaxial SiGe HBT structures. The final session will focuson the reliability and failure mechanisms in technologies intended for high fre-quency RF and high speed digital applications. These sessions are taught bypracticing experts working at the leading edge of their field.

On Monday morning, the 2000 BCTM keynote speech will be given byProfessor M. Rodwell from UC Santa Barbara. Dr. Rodwell will discuss presentefforts in building high speed HBTs and design issues which become criticalas clock rates progress to 100 GHz. There will be a panel session on Mondayevening titled “Role of Foundry for RF ICs: Will the IC design companies of the

Table of ContentsUpcoming Technical Meetings ......................1

• 2000 BCTM • 2000 PVSC

• 2000 SISPAD • 2000 Cornell Conf.

Message From the Editor-in-Chief...................2

Society News .............................................7• Message from the President• Announcement of Newly Elected

AdCom Members• Millennium Medals Awarded to EDS Members• Information on New Videos Offered by EDS• EDS Chapter Subsidies for 2001• EDS Administrative Committee Election Process• Call for Nominations - EDS AdCom• EDS Home Page Gets a Makeover• Announcement & Call for Nominations for the

Chapter of the Year Award• In Memory of Dr. Prahalad K. Vasudev

Regional & Chapter News ..........................12EDS Meetings Calendar .............................18

IEEE ElectronDevices Society

Newsletter

Minneapolis Convention Center

IEEE Electron Devices Society Newsletter ❍ July 2000

22

Electron Devices Society

I am writing this message after a lapse of almost a year. It issometimes astonishing to see how quickly the year has gone by. Asprofessionals, all of us are very busy in our work. I am hoping thatthis issue comes to you at a very prosperous time in your career.

I would like to take this opportunity to thank a number of our out-going Regional Editors for outstanding service to the Newsletterand the Electron Devices community. They are: Hiroshi Iwai (Region10), Terry H. Oxley (Region 8), S. C. Sun (Region 10), Paul K. L.Yu (Region 6), and Mark H. Weichold (Regions 3, 5 & 9). Theiroutstanding voluntary contributions for many years are exemplaryto the rest of us. Replacing them on the Newsletter Editorial Staffare: Hisayo Momose (Region 10), Gady Golan (Region 8), TahuiWang (Region 10), Stephen Parke (Region 6), and Chuck Yarling(Regions 3 & 5 ), respectively. In addition, on popular demandfrom the Latin American membership of the society, we have decid-ed to appoint an additional editor for Region 9 - Latin America.This necessity was created because of a large membership as wellas the growing importance of the electron devices field in thisregion. I am pleased to note that Prof. Adelmo Ortiz-Conde hasenthusiastically accepted this new position.

Once again, I thank all outgoing editors for their dedicated ser-vice to the Newsletter and welcome the new editors and wishthem all success. Please contact your respective Regional Editordirectly with news items.

Gady GolanDr. Gady Golan is a senior lecturer with tenurein the Department of Electrical and ElectronicsEngineering at the Technological AcademicInstitute - Holon and at The Open University ofIsrael. He also directs the Microelectronics andThin Films Laboratory at the Holon Institute.Since 1997 he established three start-up com-panies: PTC heating elements, SiC heating ele-ments, Electro-luminescent readout for smart-

cards applications. Dr. Golan has authored over 25 refereed articles and over 75

abstracts for conferences, as well as written two books: Semicon-ductors (1996) and Semiconductor Devices and Microelectronics(2000). Dr. Golan holds 5 patents on PTC heating elements. Hiscurrent research is on neutron irradiated silicon diodes. He is aSenior Member of the IEEE and a Distinguished Lecturer of EDS.

Message From the Editor


PresidentCary Y. YangSanta Clara UniversityTel: +1 408 554 6814E-Mail: [email protected]

Vice PresidentSteven J. HilleniusLucent Technologies, Inc.Tel: +1 908 582 6539E-Mail: [email protected]

TreasurerApril S. BrownGeorgia Institute of TechnologyTel: +1 404 385 0974E-Mail: [email protected]

SecretaryJohn K. LowellPDF Solutions, Inc.Tel: +1 972 889 3085E-Mail: [email protected]

Sr. Past PresidentLouis C. ParrilloMotorola, Inc.Tel: +1 512 895 2002E-Mail: [email protected]

Jr. Past PresidentBruce F. GriffingGE Corp. Research & DevelopmentTel: +1 518 387 6207E-Mail: [email protected]

EDS Executive DirectorWilliam F. Van Der VortIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 3926Fax: +1 732 235 1626E-Mail: [email protected]

Awards ChairW. Dexter Johnston, Jr.Lucent Technologies, Inc.Tel: +1 908 582 7247E-Mail: [email protected]

Educational Activities ChairIlesanmi AdesidaUniversity of IllinoisTel: +1 217 244 6379E-Mail: i. [email protected]

Meetings ChairJames T. ClemensAthena ConsultingTel: Not AvailableE-Mail: [email protected]

Membership ChairJames B. KuoNational Taiwan UniversityTel: +886 2 2363 5251E-Mail: [email protected]

Publications ChairSteven J. HilleniusLucent Technologies, Inc.Tel: +1 908 582 6539E-Mail: [email protected]

Regions/Chapters ChairHiroshi IwaiTokyo Institute of TechnologyTel: 81 45 924 5471E-Mail: [email protected]

IEEE Newsletter CoordinatorRobin EdwardsIEEE Operations Center445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331Tel: +1 732 562 3945Fax: +1 732 981 1855E-Mail: [email protected]

IEEE Electron Devices Society Newsletter is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc.Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society feefor each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changesto IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.Copyright © 2000 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for directcommercial advantage, and the title of the publication and its date appear on each photocopy.

EDS ADCOM ELECTED MEMBERS-AT-LARGE

Term Expires:

2000 2001 *2002

I. Adesida (1) A. S. Brown (2) C. L. Claeys (1)H. S. Bennett (2) T. P. Chow (2)) J. A. Dayton, Jr. (1)H. Iwai (2) K. F. Galloway(1) M. Fukuma (1)A. A. Santos (1) S. J. Hillenius (1) K. M. Lau (1)S. C. Sun (1) C. Jagadish (1) K. Lee (1)K. Tada (2) M. A. Shibib (2) M. L. Ostling (1)P. K. L. Yu (1) R. Singh (1) D. L. Pulfrey (1)

K. Shenai (2)

Number in parenthesis represents term.* Members elected 12/99

Krishna Shenai

Gady Golan

July 2000 ❍ IEEE Electron Devices Society Newsletter

3

Upcoming Technical Meetings

future have no wafer fabs?” Severalexhibits by design, test/measurement, andCAD/modeling vendors will also be ondisplay at the conference.

The conference technical sessions offerexceptional technical papers that providethe latest and most significant develop-ments in Bipolar/BiCMOS integrated cir-cuits. Presentations are given in thefollowing areas: Analog/Digital CircuitDesign, Radio Frequency Circuit Design,Device Physics, Modeling and Simulation,Process Technology, and Power Devices.The technical sessions are highlighted byinvited and tutorial papers by leadingexperts from industry and academia.

The Analog/Digital Design Ses-sion covers: Analog ICs; Digital ICs; MixedAnalog/Digital ICs; Novel Design Conceptsand Methods; DACs and ADCs; Amplifiers;Integrated Filters; Communications ICs; Sen-sors; Gate Arrays; Cell Libraries; AnalogMaster Chips; Analog ICs describing novelsubsystems within a VLSI Chip; and Packag-ing of High-Performance ICs.

The Radio Frequency Design Ses-sion will contain papers on: Low-NoiseAmplifiers; Automatic Gain Control; Low-Phase Noise VCOs; Active Mixers; ActiveGyrators; Noise Suppression Techniques; Fre-quency Synthesizers; Radio Subsystems;Packaging of RF Components; and Designingwith Passive Components at RF Frequencies.

The Device Physics Session coversthe following areas: New Device Physics

Phenomena in Si, SiGe, and III-V Devices;Profile Design Issues and Scaling Limits;Hot Electron Effects and Reliability Physics;Non-Equilibrium Transport and High FieldPhenomena; Low-Frequency Noise; andNovel Measurements Techniques.

The Modeling and SimulationsSession covers: Improved BJT and HBTModels; Behavioral Modeling Techniques;Parameter Extraction Methodologies andTest Structures; RF and Thermal SimulationTechniques; Modeling of Passive Compo-nents, Interconnect and Packages; Statisti-cal Modeling; and Device, Process andCircuit Simulation.

The Process Technology Sessioncovers: Advances in Processes and DeviceStructures Demonstrating Capabilities ofHigh-Speed, Low-Power, Low-Noise, High-Current, High-Voltage, etc.; BiCMOSProcesses; Advanced Process Techniques;Si, I I I -V and SiGe HeterojunctionBipolar/BiCMOS Devices; and Fabricationof High-Performance Passive Components.

The Power Devices Session focuseson Discrete and Integrated Bipolar/BiC-MOS Power Devices and High-Voltage ICs.Areas included are: Automotive Electronics;Disc Drives; Display Drives; Power Sup-plies; Electric Utility; Medical Electronics;Motor Controls; Regulators; Amplifiers;Converters; Aerospace Electronic Applica-tions; BiCMOS Circuits for Controlling Pow-er Devices; CAD and Modeling of PowerDevices; and Packaging of Power Devices.

The Bipolar/BiCMOS Circuits and Tech-nology Meeting is held at the Marriott City

Center Hotel in downtown Minneapolis. TheMarriott offers the finest hotel accommoda-tions in the Twin Cities area. Explore theultramodern City Center shopping complexadjoining the hotel. Stroll by skywalk to anarray of boutiques, cinemas, nightspots,and the tree-lined sidewalks of the famousNicollet Mall. Minneapolis features world-famous cultural attractions such as theGuthrie Theater, Minneapolis OrchestraHall, historic Orpheum and State Theaters.In nearby Bloomington is the largest fullyenclosed retail and family entertainmentcomplex in the United States - The Mall ofAmerica. Here you can shop at over 400stores, ride a roller coaster, shoot a round ofminiature golf, or dine in sunlight or candle-light. There are two wonderful zoos andmany other tourist sites in the Twin Cities.

BCTM is sponsored by the IEEE ElectronDevices Society, in cooperation with theIEEE Solid-State Circuits Society and theIEEE Twin Cities Section. The 2000 Confer-ence Chair is Joachim Burghartz, DIMES,Delft University of Technology, The Nether-lands. The Technical Program Chair is Ken-neth O, University of Florida, Gainesville,FL. Interested parties can contact the BCTMconference manager: Janice Jopke, CCSAssociates, 6611 Countryside Drive, EdenPrairie, MN 55346; TEL: (952) 934-5082;FAX: (952) 934-6741; E-MAIL:[email protected].

Tom SkaarLucent Technologies

Bloomington, MN

BCTM (continued from page 1)

2000 IEEE Photovoltaic SpecialistsConference (PVSC)

It is my great pleasure to invite you tothe 28th Photovoltaic Specialists Confer-ence which is sponsored by the IEEE Elec-tron Devices Society. This event will takeplace from September 15 to 22, 2000, atthe Egan Convention Center and the HiltonHotel in Anchorage, Alaska. Anchorage iseasily accessible from anywhere in theworld and it combines the best of outdooradventure and modern amenities. DenaliNational Park with Mount McKinley,Portage Glacier, and Alaska Native Her-itage Center all await you in Alaska.

This conference is the premier interna-tional meeting in our field and is designedto showcase cutting edge research andaccomplishments, review the current statusand future plans, and enrich the education-al experience in photovoltaics. The heart ofthe conference is the prestigious technicalprogram scheduled from Tuesday throughFriday. About 400 papers, including oralsand posters, will be presented at this con-ference. To maintain an appropriate bal-



4

ance, the technical papers will cover bothfundamental and applied research on thescience and technology of photovoltaicmaterials, devices and systems. Thesepapers will be listed in the preliminary pro-gram available in late June. Each presenterwill submit a paper describing the results indetail. These papers will be available in aproceedings mailed to each attendee short-ly after the conference. In addition, anarchival CD-ROM set containing all thepapers from previous Photovoltaic Special-ists Conferences will be given to all theattendees at the conference.

The conference has a strong auxiliaryprogram with activities and presentationsdesigned to increase the awareness of PV.This program focuses on teaching theimportance and potential of PV, primarilyto non-specialists. It highlights applicationssuch as integration of PV into building andincludes a workshop on “PV in Alaska”.Most of the auxiliary program activities willtake place on Sunday and Monday.

On Monday, new PV specialists enteringthe field, as well as seasoned professionals,will benefit from multiple tutorial sessions.Four different tutorials will be offered onhighly relevant and diverse topics to enrichthe educational experience in PV andbroaden the perspective of PV specialists.

Sunday through Thursday a number ofcompanies currently active in PV will exhib-it their products and services in ballroomsconveniently located within the Egan Cen-ter. The industrial exhibit offers a uniqueopportunity to learn about the latest devel-opments and market trends in PV. Be sureto stop by and visit with companies ofinterest to you and attend the receptions inthe exhibit area on Monday, Tuesday andWednesday evenings.

The organizing committee hasarranged with the Holland America CruiseLines to include a pre-conference cruise toAlaska. The cruise will leave Vancouver,British Columbia on September 10, 2000.Cruise the Inside Passage and arrive inSeward, Alaska with transfer to Anchor-age in time for the conference on Septem-

ber 17, 2000. In addition, a number ofoptional tours and a companions programhave been arranged for the attendees. Allof the details for the cruise and tours areavailable on our web page at http://ieeepvsc.nrel.gov. Please review this infor-mation and sign-up early before all thespots are taken. Another highlight of theconference will be a train trip along Turna-gain Arm where you will have the opportu-nity to see Alaskan wildlife andspectacular scenery. Dinner will be servedalong the way.

The 28th IEEE PVSC is the first major PVConference to be held in America in thenew millennium. I am confident that thisimportant event, combined with the breath-taking surroundings of Anchorage, willprovide a major stimulus to the scientificand business sectors of PV. Don’t miss thisopportunity to share information with yourcolleagues and establish new and fruitfulcontacts.

Ajeet RohatgiGeorgia Institute of Technology

Atlanta, GA

The 2000 International Conference onSimulation of Semiconductor Processes andDevices (SISPAD 2000) will be held onSeptember 6-8, 2000 at the Sheraton Seat-tle Hotel and Towers in Seattle, Washing-ton. The conference will be preceded by aone-day workshop entitled “Challenges inAdvanced Electronic Device Simulation —A Workshop and Forum for Discussion”, tobe organized by Stanford University.

SISPAD provides an opportunity for thepresentation and discussion of recent

advances in modeling and simu-lation of semiconductor devices,processes and equipment forboth increased physical under-standing and for applications toboth design and manufacturing.The program consists of 20-minute oral presentations, withample time for questions andanswers. In addition, a postersession is planned, which pro-vides a less formal venue andallows more in-depth interactionwith the authors. Paper topicsmay include:

• Device simulation, includingmodels of VLSI device scaling limits,quantum effects, and novel devices

• Process simulation, including both con-tinuum and atomistic approaches

• Equipment, topography and lithogra-phy simulation

• Interconnect modeling and algorithms• Numerical methods and algorithms,

including gridding and parallel com-puting

• Simulations of novel devices such asmicrosensors, microactuators, optoelec-

tronics devices, lasers and flat paneldisplays

• Technology CAD (TCAD) applications– Integration of process, device, and

circuit simulations– The determination of model parame-

ters and material properties– User interfaces and visualization– Benchmarking, calibration and verifi-

cation of simulatorsThe SISPAD 2000 program will feature

an expanded selection of invited speakers.The list of invited speakers includes:

T. Hiramoto (University of Tokyo)K. Jones (University of Florida)M. Lundstrom (Purdue University)C. McAndrew (Motorola)M. Miura-Mattausch (Hiroshima

University)J. Phillips (Cadence)T. de La Rubia (Lawrence Livermore

National Laboratory)N. Strecker (Integrated Systems

Engineering)The SISPAD conference is a truly interna-

tional conference. The conference siterotates between North America, Europeand Asia. The 1998 and 1999 SISPAD

2000 International Conference on Simulation of SemiconductorProcesses and Devices (SISPAD)

PVSC (continued from page 3)

Blake Island, Seattle


5

conferences were held in Leuven, Belgiumand Kyoto, Japan, respectively. Submis-sions include a broad cross-section of indus-try, university and government sponsoredwork. By attending, you will have theopportunity to interact with the worldwideleaders in TCAD research and develop-ment. The conference organizers strive tomaintain an intimate conference (typicalattendance is 150-200 people) with plentyof opportunities for ‘’hallway’’ discussions.

The SISPAD social venue will include aconference dinner at the Tillicum VillageRestaurant and Northwest Coast Indian Cul-tural Center on Blake Island State Park.Conference attendees and their guests willboard a chartered boat for a narrated har-bor tour of Elliott Bay, where you mightspot porpoises, sea lions, orca, or othermarine life that inhabit Puget Sound. Dinnerwill feature traditionally prepared baked

salmon, followed by a Northwest Coastnative dance program.

Seattle is located in the beautiful north-west coast of the USA. Famous sites includethe Space Needle, Pike Place Market, theshoreline/ferries and, of course, the ubiqui-tous coffee culture. Cultural attractionsinclude several orchestras, the PacificNorthwest Ballet and the Seattle Opera.Outdoor enthusiasts will enjoy a wide vari-ety of activities. National parks and monu-ments within Washington state includeMount Rainier National Park, North Cas-cades National Park, Olympic NationalPark - Hoh/Quinault Rain Forests andMount St. Helens National Volcanic Monu-ment. The rugged Pacific coast has manyattractions, including the San Juan Islands,and Long Beach Peninsula: “the World’sLongest Beach”. Additional information canbe obtained from the Washington State

Tourist Web site: http://www.tourism.wa.gov.

For general information, please viewour website at http://www-tcad.stanford.edu/sispad/index.html. For informationabout the one day workshop, please viewthe web page http://www-tcad.stanford.edu/tcad/CADES_workshop.html. If yourequire additional information on the con-ference or the one-day workshop, pleasecontact the SISPAD 2000 ConferenceManager, Ms. Fely Barrera, CISX 332,Stanford University, Stanford, CA, 94305-4075 USA; TEL: +1 650 723 1349; FAX: +1 650 725 7731; E-MAIL: [email protected].

John FaricelliCompaq Computer Corporation

Shrewsbury, MA

The biennial IEEE Cornell UniversityConference on High Performance Deviceswill be held August 7-9, 2000 in Ithaca,New York. The conference will continueits tradition of highlighting a variety ofimportant developments in semiconductordevices, processing techniques and high-

speed applications. The venue for theconference is Cornell University campus;the culturally and historically rich IvyLeague School located in Ithaca. Ithaca islocated in the Finger Lakes region of cen-tral New York, an area known for its nat-ural beauty, combination of urban andrural areas, and cultural and recreationalopportunities. The entire area is easilyaccessible by air or bus, and is a drive ofa half-day or less from most major citiesin the Northeast.

The following four topical areas com-prise the scope of the Conference andpapers:

• Microwave and millimeter wavedevices and circuits

• Optoelectronic devices and circuits • Speculative materials, devices and cir-

cuits concepts • Micro-electrical-mechanical system

(MEMS)

Topics of interest within these areasinclude but are not restricted to:

• Novel materials technologies anddevices

• Wide bandgap materials and devices • High speed and microwave optoelec-

tronics • Light sources and detectors • Si-based heterostructures

• Terahertz sources and detectors • High speed measurement techniques • Sb-based devices • High power and high speed packag-

ing • Microwave MEMS technology • Optical MEMS • Speculative concepts • Heterogeneous integration • Microwave and millimeter wave tran-

sistors and integrated circuits • Nanometer fabrication and self-assem-

bly techniques

The seventeenth IEEE Cornell Confer-ence has preserved its main focus inmicrowave and high-speed devices with alarge contribution from academic organi-zations. This year the emphasis will be onwide band gap materials and devices.

The IEEE Electron Devices Society (EDS)is the sponsor of the conference, and theMicrowave Theory and Techniques Society(MTTS) is providing technical co-sponsor-ship. For additional conference programand registration information, please viewthe conference web site at: http://www.iiiv.cornell.edu/cc00/.

Leda LunardiAT&T Labs

Red Bank, NJ

2000 IEEE Cornell University Conference onHigh Performance Devices

Cornell University

On 5 December 1999, the EDSAdCom held its annual election of officersand members-at-large. The following arethe results of the election and brief biogra-phies of the individuals elected.

I. OFFICERSThe following individuals were elected asofficers for a one-year term beginning1/1/2000:

CARY Y. YANG (Presi-dent) received the B.S.,M.S. and Ph.D. degreesin electrical engineeringfrom the University ofPennsylvania in 1970,1971, and 1975, respec-tively. After working in

various research positions at M.I.T., Stan-ford, and NASA on electronic properties ofsurfaces and interfaces, he founded Sur-face Analytic Research, Inc. and directedsponsored research in surface science. In1983 he joined Santa Clara University,where he founded the Microelectronics Lab-oratory and initiated research programs onsilicon device reliability and silicon-basedheterostructures. He is currently Professor ofElectrical Engineering and Director of theMicroelectronics Laboratory at Santa Clara.

Dr. Yang has been a consultant to manyindustry and government laboratories, anda visiting professor at the University ofTsukuba, the National University of Singa-pore, and the University of California,Berkeley. He is a Fellow of IEEE, and amember of the Materials Research Society.

He served as the Regions/Chapters Chairand Vice President of the IEEE ElectronDevices Society. He has been serving as aneditor of the IEEE Transactions on ElectronDevices, and has authored or co-authoredover 100 journal and conference publica-tions. He is also a co-editor of four confer-ence proceedings on silicon carbide andrelated materials, and a co-author of abook on hot-carrier effects in MOS devices.

STEVEN J. HILLENIUS(Vice President) is thehead of the ULSI Technol-ogy Research departmentat Lucent Technologies,Bell laboratories. Hereceived the Ph.D.degree from the Universi-


6

Society News

Message from the President

It is indeed my distinct privilege to serveas the president of the Electron DevicesSociety for the year 2000. As your firstpresident for the new millennium, I inviteall of you to join me in the celebration ofthe many exemplary accomplishments ofmy predecessors and EDS colleagues. I amtaking this opportunity to highlight a few ofthese accomplishments in the past decade.

Under the leadership of Al MacRae(EDS President 1986-87), Craig Casey(EDS President 1988-89), and Lew Terman(EDS President 1990-91), our ExecutiveOffice was conceived and established atthe IEEE Operations Center in Piscataway,New Jersey, with the appointment of BillVan Der Vort as the Executive Director inAugust, 1990. This office has since grownto six full-time and two part-time staff mem-bers. The globalization efforts pioneered

by Lew and Mike Adler (EDS President1992-93), and championed by them andothers, have resulted not only in growth inmembership (12,977 as of 12/31/99)and chapters (100 as of 12/31/99), butmost significantly, in increased representa-tion from all Regions in EDS activities. Andfor the very first time, our AdCom meetingwas held outside the U.S. in June 1999, inconjunction with the VLSI Symposia held inKyoto, Japan.

The careful planning and successfulexecution for transporting all editorialoperations of Electron Device Letters andTransactions on Electron Devices to ourExecutive Office constitute one of the mostimportant initiatives undertaken in recentyears. The leadership of Steve Hillenius asPublications Chair and the journals’ Edi-tors-in-Chiefs, together with the diligent sup-port of Bill and his staff, have turned thischallenge into an operational reality.

This very Newsletter was created asone of the new initiatives of Dexter John-ston (EDS President 1994-95), with theappointment of Krishna Shenai as the firstEditor-in-Chief. Dexter also presided overthe planning and production of the firstEDS Membership Directory, the EDSHome Page and the annual EDS CDROM Package, as well as championed

our Society’s participation in IEEE’s On-Line Periodicals Program.

The popular Meeting Organizers Work-shop was the brainchild of Bruce Griffing(EDS President 1998-99), and its formathas been emulated by several IEEE Soci-eties. Our technical committees wererestructured under the leadership of Lou Par-rillo (EDS President 1996-97) and throughthe tireless efforts of the Executive Office.Annual or biennial Chapters Meetings foreach Region were started by Mike, myself,Paul Yu, and Hiroshi Iwai, again with theimpeccable support of our staff.

I feel most fortunate to have the oppor-tunity to shepherd the ongoing activitiesinitiated by my predecessors. In my nextreport, I will describe the progress of newinitiatives taken this year in the areas ofmembership, education, publications, andchapters. Meanwhile, I encourage all ofyou as EDS members to continue to takeadvantage of what the Society offers andto participate in its activities. And onbehalf of all AdCom members and ourstaff, I encourage you to let us know fromtime to time how we can better serve ourSociety and its members.

Cary Y. YangSanta Clara University

Santa Clara, CA

Cary Y. Yang

Announcement of Newly Elected AdCom Members

Cary Y. Yang Steven J. Hillenius


7

ty of Virginia in 1978, in physics. He wasan Assistant Professor of physics at the Uni-versity of Virginia from 1978 to 1981where his research involved low tempera-ture solid state physics. Since 1981 he hasworked at Bell Laboratories. His contribu-tions have been in the area of silicon tech-nology device research. He holds 10patents in this field and has over 60 pub-lished articles and chapters. He is a Fellowof the IEEE. He has been the PublicationsChair of the EDS since 1991 and is anelected member of the EDS AdCom.

APRIL S. BROWN(Treasurer) was born inHillsborough, North Car-olina in 1960. Shereceived her B.S.E.E.from North CarolinaState University in 1981and her M.S. and Ph.D.in E.E. from Cornell Uni-

versity in 1984 and 1985, respectively.She has worked for HRL Laboratories inMalibu, CA as a Senior Scientist and hasheld positions at the Army Research Officeand the University of Michigan. In 1994,she joined the Georgia Institute of Technol-ogy. She is now Associate Dean of theCollege of Engineering and Professor inthe School of Electrical and ComputerEngineering. Her area of research is com-pound semiconductor materials anddevices. She is a Fellow of the IEEE and anEditor for the Transactions on ElectronDevices.

JOHN K. LOWELL(Secretary) received thePh.D. degree in AppliedPhysics from the Universi-ty of London. He hasheld technical and man-agerial assignments forUnited Technologies,Northern Telecom,

Mostek, Texas Instruments, British Tele-com/Dupont, AMD, Applied Materials,Oracle and most recently PDF Solutions.He has also been Professor at Texas TechUniversity and in the University of Texassystem, and held Consulting Professorshipsat other universities in addition to being aVisiting Scholar at the NSF Center for theSynthesis, Growth and Characterization ofElectronic Materials at the University ofTexas at Austin. Dr. Lowell is a SeniorMember of the IEEE, a Distinguished Lectur-er of the EDS and has held AdCom-levelpositions previously within the LEO andCAS societies. For fifteen years, he was

also the Associate Editor-in-Chief of theIEEE Division I Circuits & Devices Maga-zine, and was its Guest Editor twice.

II.ADCOM MEMBERS-AT-LARGEA total of eight persons were elected tothree-year terms (2000-2002) as members-at-large of the EDS AdCom. One of theeight persons was re-elected for a secondterm, while the other seven individualswere first-time electees. The backgroundsof the electees span a wide range of pro-fessional and technical interests.

A. SECOND TERM ELECTEE:KRISHNA SHENAI is aprofessor in the Depart-ment of Electrical Engi-neering and ComputerScience at the Universityof Illinois at Chicago(UIC), as well as directsthe Power ElectronicsResearch Laboratory and

MicroSystems Research Center. He recentlyestablished an industry-sponsored PowerElectronics Reliability Research Consortiumat UIC which is dedicated to developingand advancing robust power convertertechnologies. Dr. Shenai has authored over250 refereed articles in IEEE journals andconferences, written a book on VLSI Metal-lization, contributed to eight book chaptersand holds 10 patents. His current researchis on silicon and SiC power electronics andwireless technologies. He is a Senior Mem-ber of IEEE, Founding Editor-in-Chief of IEEEEDS Newsletter, Editor of IEEE Transactionson Electron Devices and a DistinguishedLecturer of EDS.

B. FIRST-TIME ELECTEES: COR L. CLAEYS wasborn in 1951 in An-twerp, Belgium. He re-ceived the Electrical -Mechanical Engineeringdegree and the Ph.D.degree in Applied Sci-ence from theKatholieke Universiteit

Leuven (KU Leuven), Belgium, in 1974and 1979, respectively. From 1974through 1984 he was respect ivelyresearch assistant then staff member ofthe ESAT Laboratory of the KU Leuven. In1984, he joined IMEC as Head of Sili-con Processing, responsible for processdevelopment and applications in chargecoupled devices, silicon sensors, CMOS,non volatile memories, SOI-CMOS andBiCMOS. Since 1990, he is Head of the

research group on Radiation Effects,Cryogenic Electronics and Noise Studies.He is also responsible for TechnologyBusiness Development. Furthermore,since 1990, he has been a Professor atthe KU Leuven. His main interests are insilicon processing, device physics, lowtemperature electronics, radiat ionphysics, submicron silicon technologiesand defect engineering. In these fields heis author or co-author of more than 400publications in scientific and technicaljournals, five book chapters and over350 presentations at international confer-ences. He has been actively involved inthe organization of international confer-ences and symposia. He is a SeniorMember of IEEE, a member of the Elec-trochemical Society and a member of theMaterial Research Society. In 1999, hewas elected as Academician and Profes-sor of the International Information Acad-emy. He is a reviewer for a variety ofscientific journals, member of the Editori-al Advisory Board of “Diffusion andDefect Data”, Trans Tech PublicationsLtd, Associate Editor of the Journal of Sol-id State Devices and Circuits, SociedadeBrasileiro de Microeletrìnica, and alsoAssociate Editor of Journal Electrochemi-cal Society. He was the founder and iscurrently the chair of the IEEE ED BeneluxChapter. He is also ED Chapter coordi-nator for Region 8 and Chair of the IEEEBenelux Section.

JAMES A. DAYTON,JR., (M’60-SM’83-F’99)BSEE, Illinois Institute ofTechnology; MSEE U. ofIowa; Ph.D. EE, U. of Illi-nois. NASA Lewis Re-search Center in Cleve-land, OH, 1967-1998:researcher and supervi-sor primarily in the area

of efficiency enhancement of travelingwave tubes with particular emphasis oncomputer modeling. Hughes ElectronDynamics in Torrance, CA, 1998-present:Director of Advanced Development andTechnology, development of travelingwave tubes and amplifiers. Editor for Vac-uum Devices for the IEEE Transactions onElectron Devices from 1994 to 1999.Chair, EDS Technical Committee on Vacu-um Devices, 1997-present. GeneralChair, International Vacuum ElectronicsConference, Monterey, CA, May 2000.EDS Distinguished Lecturer.

April S. Brown

Krishna Shenai

James A.Dayton, Jr.

John K. Lowell

Cor L. Claeys


As part of its celebration of the Third Mil-lennium, the IEEE has awarded 3,000 IEEEMillennium Medals and certificates to indi-viduals who have been selected by IEEEsocieties, regions, sections and majorboards for outstanding contributions in theirrespective areas of activity. The number of

awards allotted to each entity was based onsize, allowing each society, region, sectionand major board to award a proportionatenumber. Not since the 1984 IEEE Centenni-al Medal has the IEEE given an Institute-wide award to honor such a select andspecial group of members. Now the IEEE

will mark the end of one millennium and thebeginning of another with such an award.

World-renowned sculptor, GladysGunzer, created the medals. Her workincludes the 1984 IEEE CentennialMedal and the 1980 Winter OlympicsMedallions. The design will include aworld map symbol izing the globalnature of the IEEE and the words “InCelebration of the Third Millennium”.

MASAO FUKUMAreceived the B.E., M.E.and Ph.D. degrees inInstrumentation Engineer-ing from Keio University,Yokohama, Japan in1972, 1974 and 1986,respectively. In 1974, hejoined NEC Central Res.

Labs., where he worked on scaled downMOSFETs, TCAD and CMOS logic LSIs.Since 1999, he has been General Manag-er of Silicon Systems Res. Labs., NECCorp., which is responsible for researchand development on advanced siliconVLSIs including architecture, design,devices and processes. Dr. Fukuma hasfilled various professional committee postssuch as the Chairman of VLSI TechnologySymposium and the Editor of IEEE Transac-tions on Electron Devices.

KEI MAY LAU receivedthe B.S. and M.S. degreesin physics from the Universi-ty of Minnesota, Min-neapolis, in 1976 and1977 respectively, and thePh.D. degree in ElectricalEngineering from Rice Uni-versity, Houston, Texas, in

1981. From 1980 to 1982, she was a SeniorEngineer at M/A-COM Gallium ArsenideProducts, Inc. In the Fall of 1982, she joinedthe Electrical and Computer EngineeringDepartment at the University of Massachu-setts/Amherst, where she is now a Professor.She initiated OMCVD, compound semicon-ductor materials and devices programs atUMass. Her research group has performedstudies on strained heterostructures, high-fre-quency and photonic devices. Professor Lauspent her first sabbatical leave in 1989 at theMIT Lincoln Laboratory. She developedacoustic sensors at the DuPont CentralResearch Laboratory during her second sab-batical leave (‘95-’96). She was a visiting pro-

fessor at the Hong Kong University of Scienceand Technology for the fall of 1998.

Dr. Lau is a recipient of the NSF FacultyAwards for Women (FAW) Scientists andEngineers. She serves on the IEEE EDSAdCom, Electronic Materials Committee ofthe TMS Society of AIME, and is an editorof the IEEE Transactions on Electron Devices.

KWYRO LEE receivedthe B.S. Degree in Elec-tronics Engineering fromSeoul National Universityin 1976 and the M.S. andPh.D. degrees from theUniversity of Minnesota,Minneapolis in 1979 and1983, respectively. After

graduation, he worked as an EngineeringGeneral Manager in GoldStar Semiconduc-tor Inc. Korea, from 1983 to 1986. In1987, he joined the Department of Electri-cal Engineering, KAIST, where he is now aProfessor. He has been working as theDirector of MICROS (Micro Information andCommunication Remote-object Oriented Sys-tems) Research Center since 1997. Hisresearch interests are focused on RF andbaseband device and circuit technologiesfor mobile multimedia. He is a Senior Mem-ber of IEEE and a Life Member of IEEK.

MIKAEL L. OSTLINGreceived the MSc degreein engineering physics in1980 and the doctor oftechnology degree inelectronics in 1983, bothfrom Uppsala University.In 1984, Ostling joinedthe faculty at the school of

Electrical Engineering, Royal Inst of Tech-nology (KTH), Stockholm, where he holdsa position as professor and head of thedevice technology laboratory. Ostling isthe director of the graduate student pro-gram in electronics at KTH since 1995.During 1993/94 he was a senior Ful-bright visiting Scholar at the center for inte-grated systems (CIS), Stanford University,

USA and in 1997 he spent 3 month as avisiting professor at the University of Flori-da, Gainesville, USA. His field of researchis process and device technology for sili-con and silicon carbide/wide bandgapmaterials in high frequency and high pow-er applications. His research comprisesmore than 180 scientific papers, 3 bookchapters and several invited talks. Heserves regularly on several internationalconference committees, e.g. IEEE BCTMand ESSDERC. IEEE duties include beingChapter Chair for the ED Sweden Chapterand EDS Newsletter editor. Ostling is alsoa member of AVS, MRS and ECS.

DAVID L. PULFREYreceived the B.Sc. andPh.D. degrees in electricalengineering from the Uni-versity of Manchester,England in 1965 and1968, respectively. Since1968 he has been on thefaculty in the Electrical

Engineering Department at the University ofBritish Columbia, Vancouver, B.C., Cana-da; he was the inaugural winner of UBC’sTeaching Prize for Engineering in 1990.

He is the author of “Photovoltaic PowerGeneration” (Van Nostrand Reinhold,1979), and, with G. Tarr, “Introduction toMicroelectronic Devices” (Prentice-Hall,1989). His research area is semiconductordevice modeling, presently with emphasison compact models for high-performanceHBTs. He has published over 100 paperson the topics of: electrical breakdown inthin dielectrics; the preparation and prop-erties of plasma-anodized thin oxide films;the analysis and fabrication of Si MIS tun-nel junction structures, GaAs-based HBTs,quantum-well lasers and GaN-based HBTsand photodetectors.

He was elected Fellow IEEE in 2000 forcontributions to the modeling of heterojunc-tion bipolar semiconductor devices.

Bruce F. GriffingGE Corporation

Schenectady, NY


8

AdCom Members(continued from page 9)

Masao Fukuma

Kwyro Lee

David L. Pulfrey

Mikael L. Ostling

Kei May Lau

Millennium Medals Awarded to EDS Members


9

Each award is customized with therecipient’s name.

The Electron Devices Society was allot-ted 45 medals to be awarded to its mem-bers for outstanding contributions to thesociety and to the field of electron devices.The following EDS members were namedwinners of the Third Millennium Medal.

Willis A. AdcockRobert AdlerShojiro AsaiFrank S. BarnesDennis D. BussH. Craig CaseyM. George CrafordFrederick H. Dill Jr.Lester F. EastmanRudolf S. EngelbrechtClifford E. FayGeorge FoytJames F. Gibbons

Eugene I. GordonRobert N. HallJames S. HarrisCyril HilsumDavid A. HodgesNick Holonyak Jr.James A. HutchbyAleksandar B. JaksicRenuka P. JindalLucian A. KasprzakG. Ross KilgoreStephen KnightMatt KuhnToivo M. LiimatainenAlan L. McWhorterJames L. MerzRichard S. MullerHarvey C. NathansonWilliam J. PietenpolJames D. PlummerRobert H. RedikerHerbert J. Reich

Ian Munro RossJoseph E. RoweJohn S. SabyJohn B. SingletonEarl L. SteeleJ. Earl Thomas, Jr.Clare G. ThorntonRichard B.TrueGlen WadeJerry M. Woodall

The medals and certificates will be pre-sented to the awardees at a special EDSLuncheon on Sunday, 10 December at theSan Francisco Hilton and Towers Hotel,San Francisco, CA USA in conjunctionwith the EDS AdCom meeting and theInternational Electron Devices Meeting(IEDM). For a complete listing of the Millen-nium Medal recipients, please visit the IEEEAwards Activities web page at http://www.ieee.org/about/awards.

EDS has joined forces with the ReliabilitySociety and IEEE Educational Activities insponsoring two new video tutorials. Thesenew tutorials are now available through IEEECustomer Service. Contact Customer Serviceby TEL: +1 880 678 IEEE (outside the USAand Canada, +1 732 981 0060); E-MAIL:[email protected], or via the web athttp://www.ieee.org/ieeestore.

MEMS Performance & ReliabilityPresented by Paul McWhorter, Samuel L.Miller, and William M. Miller; SandiaNational Laboratories; technically editedby Tim Rost, Texas Instruments

This video tutorial focuses on silicon micro-electromechanical systems (MEMS) perfor-mance and reliability. This video covers howto make valid performance and reliabilitymeasurements and their relationship to somespecific design issues, addressing design,performance and reliability of MEMS togeth-er. It provides a brief overview of silicon-based technologies for those unfamiliar withthe field. Both silicon actuators and sensorsare addressed. Three professionals, alongwith a panel of experts, cover developmentsin this growing field. In the panel discussion,MEMS experts discuss the history and futureof the challenges and opportunities in theMEMS area from industry, university andgovernment perspectives. This set alsoincludes a CD-ROM that contains four relat-ed IEEE conference proceeding excerpts,bibliography, and web links to related sites.

3 Hrs. / 3 VHS TapesIEEE Member Price:$650.00 USList Price: $775.00 USNTSC Order No. HV7051-QVEPAL Order No. HV7052-QVE

Oxide Wearout, Breakdown &ReliabilityPresented by David J. Dumin, ClemsonUniversity; technically edited by Tim Rost,Texas Instruments

In this video tutorial, David J. Dumin dis-cusses how concepts involved in oxidewearout, breakdown and reliability haveevolved over the past 35 years. He carefullyand concisely organized this informativevideo since most engineers don’t have suffi-cient time to peruse the literature and devel-op an understanding of how much goodwork has been done by others in this area.Where possible the simplest physical, math-

ematical, and engineering models are usedto describe the processes taking place dur-ing the wearout/breakdown process. Thereis an emphasis on the early models, whichstill seem to be valid, and on the physicalprocesses taking place inside the oxides asthe oxides wearout and fail. This presenta-tion includes extensive references to the liter-ature with an emphasis on attempting tofind the unifying physical and engineeringprinciples that bind these different workstogether. This extensive bibliography pointsthe viewer toward details that amplify themain points covered in the video. An exami-nation for CEU credits is included in the set.

4.5 Hrs. / 3 VHS TapesIEEE Member Price:$650.00 USList Price: $775.00 USNTSC Order No. HV7053-QVEPAL Order No. HV7054-QVE

Ilesanmi AdesidaUniversity of Illinois

Urbana, IL

Information on New Videos Offered by EDS

EDS Chapter Subsidies For 2001Requests for subsidies from EDS chapters are due on 1 August 2000. Last year, the EDSAdCom awarded funding to 54 chapters, with most amounts primarily ranging fromUS$250 to US$1,000. In April, Chapter Chairs were sent an e-mail notifying them of thecurrent funding cycle. A list of guidelines was included with each e-mail. In general, activitieswhich are considered fundable include, but are not limited to, membership promotion travelallowances for invited speakers to chapter events, and support for student activities at localinstitutions. Subsidy requests should be sent via e-mail, fax or mail to the EDS Administrator,Amanda L. Papasso. Her contact information is the same as W.F. Van Der Vort’s, includedon page 2. Final decisions concerning subsidies will be made by the EDS Regions/ChaptersCommittee in early October. Subsidy checks will be issued by early December.


10

The Members-at-Large (MAL) of the EDSAdCom are elected for staggered three-year terms, with a maximum of two consec-utive terms. The 1993 Constitution andByLaw changes mandated increasing thenumber of elected MALs from 18 to 22,and required that there be at least twomembers from both IEEE Region 8 (Europe,Mid. East & Africa) and Region 10 (Asia &Pacific). It also required that there be atleast 1.5 candidates for each opening.From 1997 to 1999, seven, seven andeight positions were filled, respectively. In2000, seven positions will be filled.

The election procedure begins withthe announcement and Call For Nomina-tions in this Newsletter and IEEE ElectronDevice Letters. The slate of nominees isdeveloped by the EDS NominationsCommittee and includes the non-Commit-tee and self-nominations received. Nomi-nees are asked to submit a two-pagebiographical resume in a standard for-mat. Nominations are closed around theend of October, and the biographicalresumes are distributed to the ‘full’ votingmembers of AdCom prior to the AdCommeeting. Nominees are urged to attend

the December AdCom meeting, and theelection is held after the conclusion of themeeting.

A continuing flow of new AdCommembers who are interested in workingfor the improvement of the Society and itsrelated technical areas is key to the con-tinued development of EDS and the fieldof electron devices. Those interested inthe field, the Society, and its operationsare encouraged to attend AdCom meet-ings, become involved in Society activi-ties, and to consider running for electionto AdCom.

EDS Administrative Committee Election Process

Call For Nominations - EDS AdComThe Electron Devices Society invites thesubmission of nominations for election toits Administrative Committee (AdCom).Presently, the AdCom meets twice per yearand is composed of 22 members. Sevenmembers will be elected this year for aterm of three years, and a maximum oftwo consecutive terms is allowed. In 2000,the election will be held after the AdCommeeting on Sunday, December 10th.Electees begin their term in office on Janu-ary 1, 2001.

Nominees are being sought to fill theslate of candidates. Nominees may be self-nominated, or may be nominated by anoth-er person; in the latter case, the nomineemust have been contacted and haveagreed to serve if elected. Any member ofEDS in good standing is eligible to be nom-inated. As another condition for nominationand election, a nominee must be willing toattend the two annual AdCom meetings.

Please send your nominee’s name,address, and supporting information to the

EDS Executive Director, W.F. Van Der Vort(see page 2 for contact information) in timeto be received by the deadline of October20, 2000. It is very desirable that submis-sions include a biographical summary in astandard two-page format. The EDS Execu-tive Office can provide you with an exam-ple of the format. If you have any questionsregarding the nomination requirements orprocess, feel free to contact the Nomina-tions and Elections Chair, Bruce F. Griffing(see page 2 for contact information).

EDS Home Page Gets a Makeover

In September 1999, the EDS Websitewent public with its “new look”. Therevamped website was designed to makemore EDS information easily accessible toits world-wide membership. Modeled afterthe IEEE Home Page, the site now utilizesIEEE web templates and graphics and fol-lows the IEEE Web Publishing Guide. Thenew format also significantly eased thesearch for specific topics.

From the EDS Home Page, http://www.ieee.org/eds/, the EDS member canread the latest society news and find linksto more specific information about the soci-ety, its Adcom and the various standingand technical committees. It also providesimportant links to IEEE services frequentlyutilized by the EDS constituency.

For example, with one click of yourmouse on the links on the left-hand column,you can have before you everything youwanted to know about chapters, but didn’tknow where to look.

The EDS Home Page was originally cre-ated and maintained at Northeastern Uni-versity by Lisa McIlrath. In June 1998, thesite location and responsibility shifted tothe EDS Executive Office in New Jersey,where Carrie Lin assumed the role of web-master under Lisa’s guidance. This allowed

us to take advantage of the IEEE Web Sup-port Services, which runs a weekly siteanalysis on HTML syntax errors, brokenURLs, broken pages, missing titles, missingattributes, large files and image files. Car-rie Lin of the EDS Executive Office coordi-nated our revamped site’s design, pageset-ups and links with the EDS staff andIEEE Information Technology.

Arlene Santos succeeded Lisa as newEDS Website Coordinator in January,2000.

We value your feedback and sug-gestions. Please e-mail Arlene Santos([email protected]) or Carrie Lin ([email protected]).

Arlene A. SantosNational Semiconductor Corp.

Ellicott City, MD

Arlene A. Santos


11

Announcement & Call for Nominations for theChapter of the Year Award

The Chapter of the Year Award is given each year based on the quantity and quality of the activities and programs implemented bythe chapters during the prior July 1st - June 30th period. Nominations for the award can only be made by either EDS AdCom votingmembers or self nomination by Chapter Chairs.

The winning chapter will receive a certificate and check for $1,000.00 to be presented at the International Electron Devices Meet-ing (IEDM).

The schedule for the award process is as follows:

Action DateCall for Nominations E-mailed to EDS Voting Members and Chapter Chairs 6/1/00Deadline for Nominations 9/15/00Regions/Chapters Committee Selects Winner Mid-OctoberAward given to Chapter Representative (at IEDM) First week of December

In Memory of Dr. Prahalad K. VasudevRecently, EDS lost a valuable and well-

respected member with the untimely pass-ing of Dr. Prahalad K. Vasudev. “PK”, ashe was known to most of us, was a plea-sure to know and work with. I personallyhad the opportunity to work with himwhen he managed the high-energyimplant and SOI advanced technologyprojects at SEMATECH in Austin, TX, andwhere he became widely known withinthe industrial and academic semiconduc-tor research community. I later had theopportunity to serve with him on the 1996IEDM Device Interconnect Committee. Hebecame a prominent figure in the Austinsemiconductor community where his influ-ence was felt by many students and engi-neers outside the SEMATECH realm, andwhere he later became an active partici-pant in the ED Central Texas Chapter.PK’s principal device contributions were inthe areas of SOI/SOS , phase shift mask-ing, and more recently, Cu interconnects.He was involved in the management ofseveral key SEMATECH projects and, for

some time, led the Advanced TechnologyDivision. However, his enthusiasm andendless stream of interesting and innova-tive ideas indicated a knowledge thatwent well beyond these areas. For thosewho knew him well, it was an honor andprivilege to know and work with him. Asresearcher, EDS member and friend, hewill be sorely missed by his many col-leagues and by the industry. A brief biog-raphy of Dr. Vasudev follows.

Prahalad K. Vasudev, was born inJamshedpur, India, on April 2, 1950. Hereceived his undergraduate degree inapplied physics from the IIT-Kharagpur,India, in 1970 and masters and doctor-ate degrees in computer science andelectrical engineering from Stanford in1978. He worked for the past 25 yearsin the semiconductor industry in suchpositions as: Director of Mixed SignalDesign at National Instruments, Directorof Engineering and Chief Architect forDigital/Analog ASICs, at SEMATECH -Senior Fellow and Chief Technologist of

Advanced Technologies, at HughesResearch Laboratories - Program Manag-er and Senior Scientist at the High SpeedMicroelectronics Department HewlettPackard Laboratories. Prior to his death,he had joined LSI Logic as Director ofMixed Signal Design. Dr. Vasudev was arecipient of the following honors andawards: George Abraham OutstandingPaper Award at the 1996 GovernmentMicroelectronics and Systems Conference,Appointed SEMATECH Senior Fellow(1994), Fellow (1990) Fellow of the NewYork Academy of Sciences (1995),Appointed Co-Chair of the Device Intercon-nect Committee of IEDM (1996), BestPaper Award at The IEEE VLSI TechnologySymposium (1988), Appointed Senior Sci-entist at Hughes Research Laboratories(1986), and Appointed IBM Fellow atStanford University (1974).

John K. LowellPDF Solutions, Inc.

Richardson, TX

Hisayo MomoseMs. Hisayo S. Momosehas been engaged in thedevelopment of memory,logic and analog devicesand in the research ofsmall geometry CMOSand BiCMOS devices inToshiba Corporation,Japan. Her major contribu-tions were analysis of the

hot-carrier reliability of CMOS and BiCMOSdevices, many works of nitrided oxide gateCMOS and realization of 1.5 nm direct-tunnel-ing gate oxide CMOS. She is now working onthe research and development of CMOS ana-log devices for mobile telecommunication.

She has authored or co-authored morethan 80 papers in technical journals and con-ferences. She has served as a technical pro-gram committee member for IRPS(‘92-’94),IEDM(‘97, ‘98) and ECS (ElectrochemicalSociety) Symposium(‘99). She is a member ofthe IEEE, the Electrochemical Society and theJapan Society of Applied Physics.

Stephen ParkeDr. Stephen A. Parkereceived the B.S. andM.S. degrees in electri-cal engineering fromPurdue University in1982 and 1984,respectively. In 1983,he was with the IBMT.J. Watson Research

Center, Yorktown, NY. In 1984, hejoined IBM Microelectronics in Burling-

Editors Message(continued from page 2)

Hisayo SasakiMomose

Stephen Parke


USA, Canada & LatinAmerica (Regions 1-6,7&9)International Caracas Conferenceon Devices, Circuits, and Systems(ICCDCS 2000)by Prof. F. G. Sanchez

On Friday, March 17th, members of theICCDCS Steering Committee had a work-ing meeting in Cancun with both ISTEC(Ibero-American Science and TechnologyEducational Consortium) and Motorola’sSPS representatives, where both expressedtheir willingness to support, not only ICCD-CS 2002, but also the proposed IEEERegion 9 EDS/CAS Meeting or Workshop,which is to be held on odd years alternat-ing with ICCDCS (2001, 2003, etc), andwhose exact nature still remains to be pre-cisely established. Until now, it has beendecided that it will be trilingual (Spanish,English and Portuguese) and have a strongemphasis on workshops, tutorial coursesand thematic invited talks. It will be directedspecifcally, but not limited, to participantsfrom LA and the Caribbean. As instructorsand lecturers we intend to get world-classprofessionals from our supporting industries(such as Motorola and others) and fromIEEE’s roster of Distinguished Lectures. Wehave also decided that there will be a par-ticular focus at each one of these events soas to address relevant technical issues ofcurrent interest in the region.

ISTEC already offered to help in procur-ing funds (from OAS, UNESCO, IDB, etc)to provide financial support to LA and theCaribbean participants who wish to attendto receive specialized training at the work-shops and tutorial courses. We also willrequest support from the EDS and CASEducation Committees, as well as from theRegion 9 governing body.

SBMicro2000 - InternationalConference on Microelectronics andPackagingby Nelson Braga

The XV SBMicro - International Confer-ence on Microelectronics and Packagingwill be held at the Hotel Tropical in Man-aus, the capital city of the Amazon State,Brazil, in the heart of the Rain Forest, Sep-tember 18 - 23. This conference offers aunique blend of microelectronics and pack-

aging and serves as a forum to gather sci-entists working on topics related to systemsfabrication and integration. The multi-disci-plinary nature of SBMicro conferences isintended to emphasize the interactionsamong processing and packaging tech-nologies, devices, CAD and circuit design,through a variety of formats, such as oralpresentations, poster sessions, exhibits,panel discussions and tutorial sessions.Since 1986, this conference has beensponsored by the Brazilian MicroelectronicsSociety (SBMICRO), and co-sponsored bythe International Microelectronics and Pack-aging (IMAPS) Society. In the same weekand venue, the International Conference onIntegrated Systems and Circuits - SBC-CI2000 will be held. The deadline forpaper submissions is 04/28/2000. Pleasecontact Nelson Braga for more information.TEL: (+5511) 818-5257; FAX: (+5511)818-5585; E-MAIL: [email protected],URL: http://www.lme.usp.br/~sbm2000/.

Mark Weichold, Editor

Europe, Middle East &Africa (Region 8)Report on the InternationalWorkshop on the Inelastic MeanFree Path of Electrons, IMFP 2000.Budapest, January 27-29, 2000by Gyorgy Gergely

The IMFP is a material parameter,defined by ASTM standards and appliedby surface, and interface analysis in tech-nology, research, development and failurehunting. It is used by AES (Auger spec-troscopy and microscopy) and XPS, widelyapplied in microelectronics, semiconductordevices, vacuum techniques etc. The IMFPdetermines the intensity and distribution ofthe analytical peaks, and the samplingdepth of analysis. The evaluation of experi-ments is based mainly on calculated IMFPdata. The National Institute of Standards &Technology (NIST, Gaithersburg, USA)elaborated databases on the IMFP and ofthe electron elastic scattering cross-sections.

The joint workshop was organized andheld in the Res. Inst. Technical Physics andMaterials Science, in the KFKI Campus ofthe Hungarian Academy of Sciences. It wasorganized together with the Roland EotvosPhysical Society and with the IEEE ED Hun-

gary Chapter. The workshop was spon-sored by the Hungarian Committee for Tech-nical Development (OMFB), Paks NuclearPower Plant Co. and by the IEEE ElectronDevices Society. Thirty participants from 11countries presented lectures, and softwaredemonstrations. It was a summit meeting ofprominent scientists in the field: C. J. Powell(NIST), A. Jablonski (Warsaw), S. Tougaard(Odense), K. Goto (Nagoya), C. M. Kwei(Hsinchu), Z. J. Ding (Hefei) et al. Invited lec-tures followed by discussions summarizedour present knowledge on the IMFP. Themain topics of the workshop were:

• Theoretical methods for calculating theIMFPs

• Experimental methods, mainly elasticpeak electron spectroscopy

• Interpretation of electron spectra byMonte Carlo and transport methods.

• Calculated and experimental IMFPdata. Reasonable agreement with theNIST data.

• Data interpretation and quantification,background subtraction

• Surface excitation in electron spec-troscopy

• Applications of the IMFP.Results archived by the EU COPERNI-

CUS ERBIC 15CT960800 Projects havebeen presented.

A booklet of extended abstracts wasforwarded to participants (Editor: G.Gergely and M. Menyhard, Res. InstTechn. Phys. Mat. Sci. Budapest, E-MAIL:[email protected]). It was proposed toorganize the 2nd workshop on the IMFP inPrague in 2001.

Mikael Ostling, Editor

ED/MTT Egypt Chapterby Ibrahim Salem

The MTT/EDS Egypt chapter, in cooper-ation with the National Radio Science Com-mittee, had organized its 17th NationalRadio Science Conference (NRSC) from 22to 24 February 2000 at Menufiya Faculty ofElectronic Engineering, Minufiya University.The conference included a special sessionfor Electronics and Photonics at which thefollowing papers were presented:

• Theory of nonlinear transport of hotcarriers across semiconductor junction

• A proposal graded band gap channelMOSFET

• Laser altimetry and its application ingeographic scanning


12

Regional and Chapter News


13

• Design of radiation hard CMOS APSimage sensors for space applications

• A new proposed method for the designof broadband microwave planardiode detectors

The 141 participants were from 15 uni-versities in Egypt, two participants fromUSA, two participants from Canada, onefrom France. The conference is technicallyco-sponsored by the IEEE-ED Society, andthe IEEE catalog number of the proceedingis 00EX396.

Gady Golan, Editor

ED University of Nis Student BranchChapterby Aleksandar Jaksic

Our ED Student Branch (SB) Chapterwas officially formed in March 1999 imme-diately before the tragic war events inYugoslavia. These events have somewhatdisturbed the initial plans for chapter activi-ties. We were even afraid that the chapterwould not survive the consequences of war,particularly the post-war economic crisis,and are now very happy to realize that wewere completely wrong. Due to the under-standing of the people from EDS and IEEERegion 8, and, of course, our own efforts,the chapter not only survived, but evenincreased its membership. As the result, inApril 2000 the expansion to include SSCSociety as a sponsor was approved. Wewould particularly like to mention the pre-cious help of the “older” YugoslaviaED/SSC Chapter in all our activities.

Activities of the SB chapter in the previ-ous period included a promotional cam-paign among students of our university,which involved lectures of higher gradeIEEE members on IEEE missions and bene-fits of IEEE membership to the students. Wehave had successful educational and tech-nical meetings with videotape projections.Videotapes were borrowed from the EDSLending Library and were of good quality.Several interesting social events were alsoorganized, such as parties and picnics,some in connection with the STAR programwe are coordinating. The SB chapter mem-bers had also helped in the organizationof a major event, the 2000 InternationalConference on Microelectronics (MIEL)conference (Nis, 14-17 May 2000).

We have ambitious plans for futureactivities, as follows. More meetings withvideotape projections will be held. We willtry to arrange a lecture of one of the EDSDistinguished Lecturers later this year. Weare also trying to implement a project toprovide our Student Branch, and SB Chap-ter with appropriate room, a computer with

access to IEEE electronic products (unfortu-nately, most chapter members still don’thave access to the Internet) and a smalllibrary subscribed to Student Branch Maga-zine Package containing 33 magazines.

For more information, please contactthe Chapter Chair, Aleksandar Jaksic([email protected]).

ED Novosibirsk State TechnicalUniversity Student Branch Chapterby Alexander Gridchin

As it was planned for the second partof the past year, some activities were orga-nized by students of our Student Branchand Student Branch chapters. English class-es were organized in October - November1999 and eight IEEE student membershave increased their language level. Dueto a close cooperation with IEEE Region 8Vice-Chair for Student Activities, Mrs.Gozde Bozdagi, we held an open presen-tation of our Student Branch to all studentsand interested supervisors of our Universityon 8 December 1999. The videotaperecord of the presentation (in Russian) wasmade and can be extended to all interest-ed Russian colleagues.

The 37th annual student conference“Days of Science 2000” was held atNovosibirsk State Technical University. Tenof our IEEE student members took part inthis conference. Within the program ofmembership promotion, the IEEE StudentBranch established two awards for the bestpaper. Vadim V. Nekrasov, one of our stu-dent members, was awarded free IEEEmembership for 2001.

In March 2000, two representatives ofour Student Branch took part in the RussianScientific-Practical Conference of Students,Young Specialists and Scientists “ModernTechnique and Technology” in the TomskPolytechnical University. Our counselor,Alexander V. Gridchin, made an invitedlecture on modern problems and prospec-tive of the IEEE for students in XXI century.This lecture will be published in the confer-ence proceedings.

Within our educational activities, in2000 we plan to invite several scientists togive lectures to our students. As of April2000, we’ve organized two such lectures.The first was devoted to the analysis andforecast of trends in modern micro andnanoelectronics and the second to thequantum Hall effect. Both lectures areavailable as videotapes (in Russian).

The 1st Siberian Russia Student Work-shop on Electron Devices and Materials(EDM’2000) will be held from 19-22 Sep-tember 2000 at Novosibirsk State Techni-

cal University. This Workshop will bedevoted to the 50th anniversary of our uni-versity. More information is available onthe web at http://www.ref.nstu.ru/edm orvia E-MAIL: [email protected].

The WWW Home Page of our StudentBranch is under preparation. Web sites ofED and SSC SB chapters will also beincluded into this page. We will continueefforts on promoting information about theIEEE and its societies and involving stu-dents and scholars in the scientific andeducational activity worldwide.

MTT/ED/AP/CPMT/SSC WestUkraine Chapterby Mykhailo Andriychuk

The main point of our chapter’s activitiesduring the past half-year period was theInternational Conference on Modern Prob-lems of Telecommunications, Computer Sci-ence and Engineers Training (TCSET’2000).It was held at Mountain Resort Slavsko, Lvivregion, Ukraine, February 14-19, 2000. Theconference was organized under the IEEEaegis by the State University “Lvivska Poly-technika”. Conference participants were rep-resenting five European countries (Moldova,Poland, Russia, Switzerland, and Ukraine).From 150 authors who submitted theirpapers to the Organizing Committee, morethan 90 scientists attended the conferenceand took part in eight oral sessions. Themajority of participants were from Ukrainianand Polish universities where investigationsin electronics and communications are car-ried out. The high scientific level of the con-ference was confirmed by high quality ofpresented reports. Presented reports dealwith modern problems of mathematical andcomputer simulation of electronic, electricalcircuits and devices, state-of-the-art informa-ton and communication technologies, meth-ods of signal and image processing, andaspects of biomedical engineering.

From October 1999 through April2000, seven meetings with scientific andtechnical subjects of interest to the chapter’smembers were held. In the area of the edu-cational programs the chapter’s membershad the opportunity to attend the followingcourses: “Chemical and Physical Bases ofMicro Technology” (Prof. Lubov I. Zakalyk,Lviv State University “Lvivska Politekhnika”);“Technology and Design of Micro Circuits.Connections and Interconnections in Inte-grated Circuits” (Prof. Lubov I. Zakalyk, LvivState University “Lvivska Politekhnika”);“Materials for Optoelectronics and Coher-ent Optics” (Dr. Dmytro I. Popovych, Institutefor Applied Problems of Mechanics andMathematics of NASU).

The chapter’s activities were alsofocused on membership development.Four new MTT and ED society memberswere recruited in 1999. These new mem-bers are supported from the chapter bud-get. Due to the efforts of chapter andfinancial support of the IEEE Solid StateCircuits Society, six new SSC societymembers joined our chapter. Two chap-ter members, Professor Nikolai N.Voi tovich and Prof. Zenoviy T.Nazarchuk, were nominated as SeniorMembers in 1999.

AP/ED/MTT/AES/LEO/GRS EastUkraine Chapterby Gennadiy Churyumov

During the past period, the activity ofour Joint Chapter was focused on twomain aspects: the cooperation in organi-zation of the international conferences,workshops and seminars and the effortsin increasing the membership andincluding the participation of studentsand post -graduate s tudents inEDS/MTTS activities.

The 3rd International Conference onAntenna Theory and Technics (ICATT’99)was organized by our joint chapter from8-12 September 1999 at SevastopolState Technical University. More than130 experts from 10 countries participat-ed. There were 15 invited and more than200 regular papers presented in 12 oralsections. All papers were published in theICATT’99 Proceedings in English.

The Chapter also participated in theorganizat ion of several successfu levents. The regular Seminars on Med-ical Electronics and Integral Equations inElectromagnetics have been held month-ly at the Kharkov State Technical Univer-sity of Radio Electronics. We are doingour best to include our students in theworldwide scientific and educationalprocess. For this purpose, one time persemester we hold a lecture for studentsof the Electronics Engineering Faculty ofKharkov State Technical University ofRadio Electronics. We will soon orga-nize language courses for our membersin order to improve their English.

For further information, please contactthe Chapter Chair: Prof. Yakov Shifrin,Kharkov State Technical University ofRadio Electronics, 14 Lenin Ave., Kharkov61166, Ukraine; TEL: 380 572 409430;FAX: 380 572 409113; E-MAIL:[email protected].

Ninoslav Stojadinovic, Editor

Asia & Pacific (Region 10)ED/LEO Australia Chapterby Dr. Chennupati Jagadish

The ED/LEO Australia Chapter is orga-nizing (jointly with Australian National Uni-versity) the 11th International Semi-conducting and Insulating Materials Confer-ence in Canberra during July 3-7, 2000.Further information about the conference isavailable on the web at: http://rsphysse.anu.edu.au/admin/simc2000/. Dr. AlfredIpri, IEEE Distinguished Lecturer visited thechapter in Canberra and gave a seminaron “Flat Panel Displays”.

The ED/LEO Australia Chapter is also atechnical co-sponsor of the 2000 Confer-ence on Optoelectronic and MicroelectronicMaterials and Devices (COMMAD2000),to be held in Melbourne during 6-8 Decem-ber 2000. Conference information can beobtained via the web at: http://www.latrobe.edu.au/www/commad2000/.

For further information about Chapteractivities, please contact Chapter Chair:Professor Chennupati Jagadish, AustralianNational University; TEL: 61-2-6249-0363;FAX: 61-2-6249-0511; E-MAIL:[email protected] or [email protected].

LEO/ED Victoria Chapterby Dalma Novak

The joint IEEE LEOS & EDS VictorianChapter had a very busy year in 1999with over eight activities organized. Thefirst activity for 2000 was an EDS Dis-tinguished Lecture given by Dr. AlfredIpri from the David Sarnoff ResearchCenter in Princeton, NJ USA, who dis-cussed the topic of Flat Panel Displays.The talk was presented on 27 April2000.

AP/ED Bombay Chapterby Prof. Juzer Vasi

The new AP/ED Bombay Chapter wasinaugurated on February 14, 2000 at awell-attended function held at the IndianInstitute of Technology (IIT), Bombay.

Present at the inaugural function wereEDS Distinguished Lecturer, ProfessorHiroshi Iwai of the Tokyo Institute of Tech-nology, and Dr. Renuka Jindal, Editor-in-Chief of the IEEE Transactions on ElectronDevices, who as the Chapter Partnerplayed a key role in the formation of theBombay Chapter.

The AP/ED Bombay Chapter was offi-c ial ly inaugurated by Prof. S.C.Sahasrabuddhe, Director, IIT Bombay,who welcomed the initiation of thisimportant activity in Bombay under theauspices of the IEEE. Dr. Jindal made apresentation of the EDS charter and therole of EDS chapters and benefits avail-able to them. Professor Iwai (in hiscapacity as the Chairman of the EDSRegions/Chapters Committee) discussedthe growth and activities of EDS chaptersworldwide. Also speaking on the occa-sion were Mr. R. Muralidharan, Chair-man of the IEEE Bombay Section, andProfessor Girish Kumar, who highlightedsome aspects of APS.

Prof. Iwai delivered his DistinguishedLecture on “Sub-100 nm MOSFET Tech-nologies”, which focused on current andfuture trends in CMOS as devices arescaled below 100 nm. This authoritativetalk was extremely well received by thelarge audience (numbering over 100)which consisted of EDS and APS members,other IEEE members from the Bombay Sec-tion, and faculty and students from IIT Bom-bay as well as several other colleges inand around Bombay.


14

Participants at the Inaugural Function of the IEEE AP/ED Bombay Chapter held at IIT Bombay. Prof. HiroshiIwai and Dr. Renuka Jindal can be seen standing in the center of the front row.]

During their visit to Bombay, ProfessorIwai and Dr. Jindal also discussed variousissues with EDS members during an hour-long meeting. This lively discussiontouched upon the role of EDS chapters, thebenefits available to EDS chapters, howthe EDS could be made more responsive tomembers and the future activities of theBombay Chapter. Dr. Renuka Jindal alsotook the opportunity of this meeting withthe EDS members to present some statisticson the IEEE Transactions on ElectronDevices. The audience (many of whomwere subscribers and/or contributors to theTransactions) offered several interestingcomments and suggestions.

The elected office-bearers of the newAP/ED Bombay Chapter are: Juzer Vasi,Chairman ([email protected]); Girish Kumar,Vice-Chairman ([email protected]);Arvind Shaligram, Vice-Chairman([email protected]. in); Ramgopal Rao, Secretary/Treasurer ([email protected]). For further informa-tion on the Bombay Chapter, pleasecontact Juzer Vasi, EE Department, IIT Bombay, Powai, Mumbai 400076, India; FAX +91-22-5783480; E-MAIL:[email protected].

ED/MTT India Chapterby Dr. K.S. Chari

The chapter had held several activitiesas summarized below:

At the invitation of the chapter, EDSRegions/Chapters Chair, Prof. Hiroshi Iwaiof the Tokyo Institute of Technology, deliv-ered a half day workshop entitled “Sub-100nm MOS Technologies” in the Ministry ofInformation Technology, Delhi on 16 Febru-ary. The talk was much appreciated by theattendees. About 50 participants from indus-try, academic and government R&D groupsattended the talk.

Prof. Iwai also visited Delhi UniversitySouth Campus on 17th February morning

and interacted with the faculty and stu-dents of the Electronics Science Deptart-ment Prof. Radhey Gupta, Ex-commember of the chapter, coordinated thevisit of Characterisation Labs in the Min-istry of Information Technology in theafternoon of 17th Feb. and met with stu-dents. The Chapter Chair hosted this visit.

A lecture entitled “Microwave and Mil-limeter Wave Planar Antennas” was deliv-ered by Dr A.R. Jha, Technical Director ofJha Technology Consulting Services (USA)on 10 March at the Indian Institute of Tech-nology Delhi. About 30 participantsattended the talk.

A two-day National Symposium (27-28March) on Advances in Microwaves andLight Waves was co-sponsored by thechapter at Delhi University. The event wasalso co-sponsored by the MicrowaveForum of Delhi University and IEEEAES/COM/LEO India Chapter. The sym-posium focused on development in OpticalFibre Technologies, Fibre Sensors andComponents, Microwave Materials/Com-ponents and Antennas, High PowerMicrowave Devices and Radar and Satel-lite Communication. About 150 partici-pants attended the symposium. Thesymposium was coordinated by ProfessorsEnakshi Sharma, Mridula Gupt, A. K. Ver-ma and Mukesh P. Singh.

EDS AdCom representatives Prof.Hiroshi Iwai (EDS Regions/ChaptersChair) and Dr. Renuka Jindal (ChapterPartner), visited the chapter on 16 Febru-ary. Both Prof. Hiroshi and Dr. Jindaladdressed members on EDS programsand activities and reviewed the on-goingefforts of the chapter. The Chapter Chairgave a brief talk on the many initiativesand efforts of the chapter. The interactionswith EDS AdCom representatives broughtout several useful suggestions that thechapter will be following-up to furtherstrengthen its activities.

The chapter executives met on 18 Feb-ruary and planned for activities during therest of the year. The financial support fromthe chapter to the upcoming events ofNASET 2000 at Kurukshetra University,STAR 2000 and Workshop in Microwaveand Photonics were decided.

ED Malaysia Chapterby Dr. Burhanuddin Yeop Majlis

ED Malaysia will organize the 2000IEEE International Conference on Semi-conductor Electronics (ICSE’2000) from13-15 November, 2000. The conferencewill be held in the Guoman Port DicksonResort, Negeri Sebilan, Malaysia. Thisconference is the fourth international con-ference organized by the ED MalaysiaChapter. The scope of the conferencecovers areas related to semiconductorphysics, devices, materials, process, mod-eling, microsensor and MEMS, MMIC,etc. The deadline for submission of a fullpaper is 15 August 2000.

For further information about chapteractivities, please contact Chapter Chair:Burhanuddin Yeop Majlis; TEL: 603-8295862; FAX: 603-8259080; E-MAIL:[email protected].

IEEE REL/CPMT/ED SingaporeChapterby YC Ng

The new committee for the REL/CPMT/ED Singapore Chapter for the year2000 was formed. Dr. SH Ong agreed torun for one more year as the Chapter Chair,and he is assisted by Dr. Radha as Vice-Chair. To prepare for the international con-ferences that the chapter used to organize,two sub-committees were formed. The Inter-national Symposium on Physical and FailureAnalysis of Integrated Circuits (IPFA) is head-ed by Dr. Pey Kin Leong; and the ElectronicPackaging Technology Conferences (EPTC)chaired by Dr. Lim Thiam Beng.

A four-part evening video course wasorganized by the chapter and EDS fromMarch 7 - 10. The title of the video courseis “Giga-Scale Video Course Program”and covered CMOS decide and processdesign to the challenges and manufactur-ing issues. Seventeen participants attendedthe video cum evening talks at NanyangTechnological University (NTU).

The second technical talk was held inthe Faculty Club, National University ofSingapore. Dr. Leo G. Henry of AntiguaElectronics, USA, presented a topic titled“Transmission Line Pulse ESD Testing ofICs”. There were 18 participants.

W. K. Choi, Editor


Meeting of Delhi based EDS members, etc. with visiting EDS AdCom members, Prof. Hiroshi Iwai and Dr.Renuka Jindal

15


16

New officers for the Japan (formerTokyo) Chapterby Hiroshi Iwai

The chair and secretary of the ED JapanChapter* (The name of ED Tokyo Chapterchanged to ED Japan Chapter according tothe change of former IEEE Tokyo Section toIEEE Japan Council) - Dr. Hisatsune Watan-abe (NEC), Chair, and Dr. Masao Fukuma(NEC), secretary — retired at the end oftheir 2 year term, and new officers wereelected on January 24th. They are Prof.Kazuo Tusbouchi (Tohoku Univ.) — Chair,Naoki Yokoyama (Fujitsu) — Vice-Chair —,Kazuya Masu (Tohoku Univ.) — Secretary,and Yuu Watanabe (Fujitsu) — Treasurer.We would like to thank Drs. Watanabe andFukuma for their great contribution to the EDTokyo Chapter and welcome the new offi-cers to the ED Japan Chapter.

Japan Chapter’s Annual BriefingSession for the 1999 IEDMby Kazuya Masu

On January 24th, an annual BriefingSession for the 1999 IEDM was held inTokyo, where five speakers were invited

to deliver summary talkson the highlights of the1999 IEDM. Topics cov-ered were IntegratedCircuit, CMOS Devices,CMOS Interconnects/Process, Modeling/Simulation, and Com-pound/Quantum De-vices. The number ofparticipants was about120, including non-EDS members. This is aunique opportunity formost Japanese engi-neers who do not havea chance to attend theIEDM held in the U.S.to obtain the latestinformation presented

at the largest meeting of the ElectronDevices Society. Many questions wereasked of the speakers and the meetingwas very successful.

ED Japan Chapter CommitteeMeetingby Kazuya Masu

On January 24th, after the IEDM Brief-ing Session, the committee meeting of theED Japan Chapter was held, and the activ-ity plan for 2000 was discussed. Formerand new officer members of the chapter,as well as Drs. S. Asai and H. Iwai attend-ed from the EDS Regions/Chapter Commit-tee. I t was concluded that moredistinguished lectures should be given forthe Japan Chapter in order to stimulatechapter activity, and that an officer mem-ber of the chapter will serve as the DL. Thechapter will make an effort to increase thenumber of student members and found achapter award for students. More concreteideas will be given by the chapter officersin the next issue of the newsletter.

Hiroshi Iwai, Editor

Announcement From New JapanChapter Chairby Kazuo Tsubouchi

New officers for 2000-2001 are KazuoTsubouchi (Chair), Naoki Yokoyama (Co-Chair), Kazuya Masu (Secretary) and YuuWatanabe (Treasurer). The committee meet-ing of the ED Japan Chapter was held on Jan-uary 24. Based on the discussion at themeeting, the Japan chapter will host the fol-lowing activities this year. The chapter willtechnically support domestic Workshopssponsored by the Institute of Electronics, Infor-mation and Communications Engineers(IEICE) in Japan. The workshops will be heldmonthly, and are organized by two technicalgroups of the IEICE, Silicon Devices andMaterials and Integrated Circuits and Devicesgroups. Furthermore, starting this year, thechapter will support the workshops organizedby Silicon Technology Division of Japan Soci-ety of Applied Physics. The Advanced Metal-lization Conference Asia/Japan session willalso be supported by the chapter. In theabove workshops and conference, more thanone hundred participants are expected toattend and exchange new ideas throughdeep discussions. In order to stimulate thechapter activity, at the above workshops,several distinguished lecturers’ presentationswill be planed. For increasing the number ofEDS members, the chapter found a chapteraward, “Young Researcher EncouragementAward”. Students and young researcherswho present attractive and novel workswill be awarded. To activate the DL pro-grams and award system, a DL nomina-tion committee and an Award committeehave been organized in the chapter.

As we have held every year so far, thechapter will plan to have an annual BriefingSession for the IEDM after the conference forgiving opportunity to most of Japaneseresearchers and engineers who do not havechance to attend the IEDM held in the US toobtain the latest information.

ED Korea Chapterby Se-Geun Park

Beginning January 2000, the ED KoreaChapter has a new chair and committee.

Sitting: From left to right S. Asai (Regions/Chapters Committee Member), K.Tsubouchi (New Chair), H. Watanabe (Former Chair) , H. Iwai(Regions/Chapters Committee Chair). Standing: From left to right Y.Watanabe (New Treasure), N. Yokoyama (New Secretary), M. Fukuma(Former Secretary), K. Masu (New Secretary).]

The Annual Briefing Session for the 1999 IEDM held on Jan. 24, 2000.

Kazuo Tsubouchi,ED Japan

Chapter Chair

Kazuya Masu,ED Japan

Chapter Secretary


17

They are Se-Geun Park (Chair, Inha Univer-sity, TEL: +82-32-860-7434; FAX: +82-32-875-5882; E-MAIL: [email protected]);Taeyoung Won (Secretary, Inha University,[email protected]); Sung W. Hwang (Pub-licity, Korea University, [email protected]); and Hyungsoon Shin(Treasurer, Ewha Woman’s University,[email protected]).

The chapter co-sponsored the 7th Kore-an Conference on Semiconductors at KoreaUniversity, Seoul, Korea during January 26- 28, 2000. This conference is the largestconference in semiconductor area inKorea, and has been organized jointly byKPS (Korean Physical Society), IEEK (Insti-tute of Electronics Engineers of Korea), KIEE(Korean Institute of Electrical Engineers),and MRSK (Materials Research Society ofKorea). At the opening ceremony, theChapter Chair presented the Best PosterPaper Award to Jong Wha Lee and KangJae Lee who were selected at the last year’sconference. The titles were “Atomic LayerDeposition of TiN Using TEMAT, NH3 andN2” and “Growth of AlGaN Thin Films byHorizontal MOCVD and Si Doping Char-acteristics”, respectively. This year, two out-standing posters were also nominated forthe ED Korea Chapter by the ProgramCommittee of the conference. One is pre-sented by K. H. Baek of Kookmin Universityand the other is by Suk-Hun Lee of Kyung-pook National University. They will bereviewed at the chapter meeting in April,and awarded at next year’s conference.

ED/SSC Seoul Chapterby Kwang S. Yoon

The first IEEE Asia Pacific Conference onASIC’99 (AP-ASIC’99) organized byED/SSC Seoul chapter was held at YonseiUniversity, Seoul, Korea, August 23-25,1999. The purpose of the conference wasto promote research and develop activities

in solid-state circuits withinIEEE Region 10 countries.AP-ASIC featured a half-daytutorial session, two keynotespeeches, two invitedpapers, and 102 paper pre-sentations (91 papers in 21regular sessions and 11papers in four special ses-sions). A total of 231 regis-trants from ten countries(Korea, Taiwan, UnitedStates, Japan, Australia, Sin-gapore, Canada, Portugal,Germany, and Macao) par-ticipated in AP-ASIC’99.Two keynote speakers in the

plenary session, Dr. Hyung-Kyu Lim (Sam-sung Electronics Co., Korea) and Dr. NickyLu(Etron Technology Inc., Taiwan) discussedsemiconductor memories in the year 2001and beyond, and trends of the IC industryin the 21st century, respectively. During AP-ASIC’99, the IEEE membership drive deskset up next to the on-site registration desk.The IEEE SSCS special membership promo-tion program that was offered enabledabout 30 students to join IEEE.

The ED/SSC Seoul Chapter is prepar-ing the second meeting, Asia-Pacific Con-ference on ASIC 2000 (AP-ASIC 2000) tobe held in Cheju island, Korea, August 28-30, 2000. The updated information on AP-ASIC 2000 is available at the website, http://www.ap-asic.org. Prof. Moon-Key Lee, Chairman of the ED/SSC SeoulChapter accepted the Chapter of Yearaward during IEDM’99, December 15,1999. The ED/SSC Seoul Chapter present-ed 1997 and 1998 IEDM videotape

courses to a totalof 160 attendeesat Inha Universi-ty, Inchon, Koreaduring December1999.

The 7th Kore-an Conferenceon Semiconduc-tors (KCS) washeld at KoreaUniversity, Seoul,Korea, January26-28, 2000.The 7th KCS sponsored by Korea Semicon-ductor Industry Association, SEMI Korea,ED Korea Chapter, and ED/SSC SeoulChapter included six invited papers, 217papers in 36 regular sessions, and 124papers in three poster sessions. The ple-nary session featured two talks, “Presentand Future of Memory Business”, present-ed by President Sang-Ho Park, Hyundai,“Electronics and Si Carbon Device” byProf. Mikael Ostling, Royal Institute ofTechnology at January 26. Prof. Ostling,as an ED Distinguished Lecturer andChapter Chair of the ED Sweden Chapter,presented a seminar to 35 attendees on“Polysilicon Emitter SiGe BJT Devices andTechnology for High Speed Circuit Appli-cation” at Yonsei University, Seoul Korea,January 28, 2000.

For further information, please contactthe Chapter Chair, Prof. Moon-Key Lee ([email protected]) or theChapter Secretary, Prof. Kwang S. Yoon ([email protected] ).

Hisayo Momose, Editor

(from left) Sung W. Hwang, Taeyoung Won , Se-Geun Park, andHyungsoon Shin.

EDS Distinguished Lecturerand ED Sweden ChapterChair, Prof. Mikael Ostling.

Attendees of AP-ASIC’99 with the organizing committee members.


18

EDS Meetings Calendar(As of 17 May 2000)

July 3 - 7, 2000, * IEEE SEMICONDUCTINGAND INSULATING MATERIALS CONFER-ENCE, Location: Australian National University,Canberra, Australia, Contact: ChennupatiJagadish, Tel: 61-2-6249-0363, Fax: 61-2-6249-0511, E-Mail: [email protected], Deadline: PastDue, www: http://rsphysse.anu.edu.au/admin/simc2000/

July 10 - 13, 2000, @ IEEE INTERNATIONALVACUUM ELECTRON SOURCES CONFER-ENCE, Location: Disney’s Coronado SpringsResort, Orlando, FL, Contact: Vita Feuerstein, Tel:(732) 562-6826, Fax: (732) 981-1203, E-Mail:[email protected], Deadline: Past Due, www:http://ctd.grc.nasa.gov/5620/IVESC_2000.html

July 11 - 13, 2000, T INTERNATIONALMICROPROCESSES & NANOTECHNOLOGYCONFERENCE, Location: University of Tokyo,Tokyo, Japan, Contact: Hiroaki Masuko, Tel: 81-3-5814-5800, Fax: 81-3-5814-5823, E-Mail: [email protected], Deadline: Past Due, www:http://www.nano.ee.es.osaka-u.ac.jp/mnc/

July 14 - 15, 2000, T IEEE INTERNATIONALWORKSHOP ON INTEGRATED POWERPACKAGING, Location: Westin Hotel, Waltham,MA, Contact: Bob Alongi, Tel: (607) 729-9949,Fax: (607) 729-7129, E-Mail: [email protected],Deadline: Past Due, www: Not Available

July 24 - 28, 2000, T INTERSOCIETY ENERGYCONVERSION ENGINEERING CONFERENCE,Location: The Riviera, Las Vegas, NV, Contact:Jean Riley, Tel: (703) 264-7553, Fax: (703) 264-7551, E-Mail: [email protected], Deadline: Past Due,www: http://www.aiaa.org

July 25 - 27, 2000 T INTERNATIONAL SYM-POSIUM ON LOW POWER ELECTRONICS &DESIGN, Location: Hotel Excelsior Palace, Rapal-lo/Portofino Coast, Italy, Contact: David Blaauw,Tel: (512) 794-4356, Fax: (512) 794-4793, E-Mail: [email protected], Deadline:Past Due, www: http://eda.polito.it/ispled-00

August 7 - 9, 2000 * IEEE CORNELL UNIVERSI-TY CONFERENCE ON HIGH PERFORMANCEDEVICES, Location: Cornell University, Ithaca, NY,Contact: Leda Lunardi, Tel: (732) 345-3218, Fax:

(732) 345-3040, E-Mail: [email protected],Deadline: Past Due, www: http://www.iiiv.cor-nell.edu/ cc00/

August 20 - 23, 2000, ? TOPICAL WORKSHOPON HETEROSTRUCTURE MICRO-ELECTRON-ICS, Location: Kyoto Research Park, Kyoto, Japan, Contact: Takashi Mizutani, Tel: 81-52-789-5230, Fax: 81-52-789-5232, E-Mail: [email protected], Deadline: Past Due, www: http://www.nuee. nagoya-u.ac.jp/institute/TWHM00/

August 28 - 31, 2000, T INTERNATIONALCONFERENCE ON SOLID STATE DEVICESAND MATERIALS, Location: Sendai InternationalCenter, Sendai, Japan, Contact: Tomoyuki Shima-da, Tel: 81-3-5814-5800, Fax: 81-3-5814-5823,E-Mail: [email protected], Deadline: 7/7/00,www: http://ssdm.bcasj.or.jp/

September 6 - 8, 2000, * IEEE INTERNATIONALCONFERENCE ON SIMULATION OF SEMI-CONDUCTOR PROCESSES AND DEVICES,Location: Sheraton Hotel, Seattle, WA, Contact:Fely Barrera, Tel: (650) 723-1349, Fax: (650)725-7731, E-Mail: [email protected],Deadline: Past Due, www: http://www-tcad.stan-ford.edu/sispad2000.html

September 8, 2000, T HIGH FREQUENCYPOST GRADUATE STUDENT COLLOQUIUM,Location: University College Dublin, Dublin, Ireland,Contact: Thomas J. Brazil, Tel: 353-1-706-1929,Fax: 353-1-283-0921, E-Mail: [email protected],Deadline: Past Due, www: http://hertz.ucd.ie/hfpg2000/main.html

September 10 - 15, 2000 T INTERNATIONALCONFERENCE ON MOLECULAR BEAM EPI-TAXY, Location: Beijing International Hotel, Bei-jing, China, Contact: MBE-XI Secretariat, Tel:86-10-68597750, Fax: 86-10-68597748, E-Mail:[email protected], Deadline: Past Due, www: NotAvailable

September 11 - 13, 2000, T EUROPEAN SOLIDSTATE DEVICE RESEARCH CONFERENCE,Location: University College, Cork, Ireland,Contact: Conference Secretary, Tel: 353-21-904398, Fax: 353-21-270271, E-Mail: ess-

[email protected], Deadline: Past Due, www:http://www.essderc.org

September 11 - 15, 2000, T INTERNATIONALCRIMEAN CONFERENCE ON MICROWAVE& TELECOMMUNICATION TECHNOLOGY,Location: Center of Business & Culture, Sevastopol,Crimea, Ukraine, Contact: Pavel V. Artukhoy, Tel:38-0692-555768, Fax: Not Available, E-Mail:[email protected], Deadline: Past Due, www:http://ieee.orbita.ru/aps/crim00e.htm

September 12 - 14, 2000, * IEEE/SEMIADVANCED SEMICONDUCTOR MANUFAC-TURING CONFERENCE AND WORKSHOP,Location: Fairmont Copely Plaza, Boston, MA, Con-tact: Margaret Kindling, Tel: (202) 289-0440, Fax:(202) 289-0441, E-Mail: [email protected],Deadline: Past Due, www: http://www.semi.org

September 12 - 14, 2000, T EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, Loca-tion: University College of Cork, Cork, Ireland,Contact: Herbert Grunbacher, Tel: 43-4242-2004-123, Fax: 43-4242-2004-179, E-Mail: [email protected],Deadline: Past Due, www: http://www.essderc.org/

September 12 - 15, 2000 T INTERNATIONALCONFERENCE ON MATHEMATICAL METHODSIN ELECTROMAGNETIC THEORY, Location:Kharkov State University, Kharkov, Ukraine, Contact:MMET’2000, Tel: 380-572-448595, Fax: 380-572-441105, E-Mail: [email protected], Dead-line: Past Due, www: Not Available

September 14 - 16, 2000 T INTERNATIONALCONFERENCE ON MICROWAVE AND MIL-LIMETER WAVE TECHNOLOGY, Location: Bei-jing International Convention Center, Beijing, China,Contact: Fang Min, Tel: 86-10-68283463, Fax: 86-10-68283458, E-Mail: [email protected], Dead-line: Past Due, www: http://www.cie-china.org/icmmt2000.htm

September 17 - 20, 2000, # IEEE INTERNATION-AL CONFERENCE ON COMPUTER DESIGN:VLSI IN COMPUTERS AND PROCESSORS,Location: Austin Marriott at the Capital, Austin, TX,Contact: Mary Kate Rada, Tel: (202) 371-1013, Fax:(202) 728-0884, E-Mail: m.k.rada@ computer.org,Deadline: Not Available, www: Not Available

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ‘Sponsorship/Co-Sponsorship’ and ‘Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

The complete Calendar can be found at our web site: http://www.ieee.org/organizations/society/eds/. Please visit!


September 17 - 22, 2000, * IEEE PHOTOVOLTA-IC SPECIALISTS CONFERENCE, Location: Anchor-age Hilton and William A. Egan Civic & ConventionCenter, Anchorage, AK, Contact: Americo F.Forestieri, Tel: (440) 234-1574, Fax: (440) 234-1574, E-Mail: [email protected], Dead-line: Past Due, www: http://ieeepvsc.nrel.gov

September 17 - 22, 2000 T INTERNATIONALCONFERENCE ON ION IMPLANTATIONTECHNOLOGY, Location: Alpbach ConferenceCenter, Tyrol, Austria, Contact: IIT 2000, Tel: 49-9131-761-100, Fax: 49-9131-761-102, E-Mail:[email protected], Deadline: Past Due, www:http://www.mfa.kfki.hu/IIT2000

September 18 - 20, 2000, # INTERNATIONALSYMPOSIUM ON ULTRA CLEAN PROCESS-ING OF SILICON SURFACES, Location: Ther-mae Palace Hotel, Oostende, Belgium, Contact:Marc Heyns, Tel: 32 16 29 00 10, Fax: 32 16 2905 10, E-Mail: [email protected], Deadline: PastDue, www: http://www.imec.be/ucpss/ucpss.html

September 19 - 22, 2000, T SIBERIAN RUSSIASTUDENT WORKSHOP ON ELECTRONDEVICES AND MATERIALS, Location: Novosi-birsk State Technical University, Novosibirsk, Rus-sia, Contact: Alexander V. Gridchin, Tel:7-383-246-0877, Fax: 7-383-246-0209, E-Mail:[email protected], Deadline: Past Due, www:http://www.ref.nstu.ru/edm

September 20 - 22, 2000, T INTERNATIONALCONFERENCE “ACTUAL PROBLEMS OFELECTRON DEVICE ENGINEERING”, Location:Saratov, Russia, Contact: A.A. Zakharov, Tel: 7-8452-257744, Fax: 7-8452-507563, E-Mail:[email protected], Deadline: Not Available,www: http://sstu.runnet.ru/apede2000.html

September 20 - 22, 2000, T INTERNATIONALCONFERENCE ON ADVANCED THERMALPROCESSING OF SEMICONDUCTORS, Loca-tion: Hilton Gaithersburg, Gaithersburg, MD, Con-tact: RTP Conference Secretariat, Tel: (719)579-8050, Fax: (719) 579-8082, E-Mail: [email protected], Deadline: Past Due, www: http://www.rtp-conference.org

September 24 - 26, 2000, * IEEE BIPOLAR/BIC-MOS CIRCUITS AND TECHNOLOGY MEET-ING, Location: Minneapolis Marriott City CenterHotel, Minneapolis, MN, Contact: Janice V. Jopke,Tel: (612) 934-5082, Fax: (612) 934-6741, E-Mail: [email protected], Deadline: Past Due, www:http://ectm.et.tudelft.nl/www/ BCTM/

September 25 - 28, 2000, T IEEE INTERNA-TIONAL DISPLAY RESEARCH CONFERENCE,Location: Breakers Hotel, Palm Beach, FL, Contact:Ralph Nadell, Tel: (212) 460-8090 ext. 203, Fax:(212) 460-8090, E-Mail: rnadell@ newyork.pal-isades.org, Deadline: Past Due, www:http://www.sid.org

September 26 - 28, 2000, T ELECTRICAL OVER-STRESS/ELECTROSTATIC DISCHARGE SYMPO-SIUM, Location: Disneyland Hotel, Anaheim, CA,Contact: ESD Association, Tel: (315) 339-6937, Fax:(315) 339-6793, E-Mail: [email protected], Dead-line: Past Due, www: http://www.eosesd.org

September 26 - 29, 2000 T INTERNATIONALCONFERENCE ON ACTUAL PROBLEMS OFELECTRONIC INSTRUMENT ENGINEERING,Location: Novosibirsk State Technical University,Novosibirsk, Russia, Contact: L.I. Lisitsyna, Tel: 7(383-2) 46-06-19, Fax: 7 (383-2) 46-50-61, E-Mail: [email protected], Deadline: Past Due,www: Not Available

September 27 - 29, 2000, T INTERNATIONALCONFERENCE & WORKSHOP ON ELECTRO-MAGNETICS OF COMPLEX MEDIA - BIAN-ISOTROPICS, Location: Congress Center, InstitutoSuperior Tecnico, Lisbon, Portugal, Contact: AfonsoM. Barbosa, Tel: 351-1-8418482, Fax: 351-1-8417284, E-Mail: [email protected], Dead-line: Past Due, www: http://www.lx.it.pt/bian2000

September 27 - 29, 2000, @ INTERNATIONALSYMPOSIUM ON SEMICONDUCTOR MAN-UFACTURING, Location: Hotel East 21st Tokyo,Tokyo, Japan, Contact: Sumitomo Hirota, Tel: 81-3-3815-8775, Fax: 81-3-3815-8529, E-Mail: [email protected], Deadline: Past Due, www: http://www.issm.com

19

ton, VT where he worked in advancedDRAM process/device design, specializ-ing in device & interconnect modeling,DRAM array noise and sense amplifica-tion, and DRAM data retention for IBM’s4Mb, 16Mb and 64Mb DRAM designs.In 1989, he was awarded an IBM Fel-lowship, and joined the Berkeley DeviceResearch group at the University of Cali-fornia. He designed, fabricated andstudied the behavior of deep-sub-micronMOSFET and lateral bipolar transistorson thin-film SOI. He was also a co-inven-tor of the Dynamic Threshold MOSFET(DTMOS) for sub-volt, low-power CMOSapplications. In 1993, he received thePh.D. degree from UC Berkeley andjoined the IBM Semiconductor R&D Cen-ter in Fishkill, NY where he worked inthe 0.25um, 256Mb DRAM process

development alliance between IBM,Toshiba, and Siemens. In August 1996,he joined the Electrical Engineering fac-ulty of Boise State University to lead thedevelopment of a new Microelectronicsprogram. In 1998, he became the firstdirector of the new Idaho Microfabrica-tion Laboratory at Boise State. He alsolead the implementation of Semiconduc-tor Device Modeling & Characterizationlaboratories at Boise State, includingmicrowave wafer level test capability.In 1998, Dr. Parke helped found theIEEE ED Boise chapter. Dr. Parke’s pre-sent research interests include RF model-ing of bulk and SOI deep-sub-micronMOSFETS for low-power, wireless appli-cations, and novel 3-D silicon logic gate& memory cell structures. Dr. Parkeholds four patents and has authored orco-authored over 25 research papers.He is a Senior Member of IEEE, and amember of Tau Beta Pi and Eta KappaNu honorary societies.

Charles YarlingCharles B. Yarling is aconsultant and publish-er of Ion Beam Press,which publishes bookson ion implantation insemiconductor integrat-ed circuit wafer faboperat ions. He hasworked in several

wafer fabs and for a number of ionimplanter and rapid thermal process(RTP) equipment suppliers. Mr. Yarlingreceived his BSEE and Mathematicsdegrees from the University of Texas atAustin and has authored or co-authoredover 70 technical papers and six bookson ion implantation, process control, andrapid thermal processing. Mr. Yarling isa member of the American Vacuum Soci-ety (AVS) and IEEE.

Krishna ShenaiUniversity of Illinois at Chicago

Chicago, IL

Editors Message(continued from page 11)

Charles Yarling

EEDDSSEDITOR-IN-CHIEF

Krishna Shenai EECS Department (M/C 154), 1135 SEO The Univ. of Illinois at Chicago Tel: +1 312 996 2633851 South Morgan Street Fax: +1 312 996 0763Chicago, IL 60607-7053 E-Mail: [email protected]

REGIONS 1-6, 7 & 9Eastern and Northeastern USA(Regions 1 & 2)M. Ayman ShibibLucent Technologies Inc.Bell Laboratories2525 N. 12th StreetP.O. Box 13396Reading, PA 19612Tel: +1 610 939-6576Fax: +1 610 939-6795E-Mail: [email protected]

Southeastern and SouthwesternUSA (Regions 3 & 5)Charles B. Yarling201 W. Stassney, #506Austin, TX 78745-3144Tel: +1 512 306 1493Fax: +1 512 306 0384E-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarApdo. 89000Caracas 1080-AVenezuelaTel: +011 582 906 4010Fax: +011 582 906 4025E-Mail: [email protected]

Central USA & Canada (Regions 4 & 7)Arokia NathanDALSA/NSERC Industrial Research ChairElectrical & Computer EngineeringUniversity of WaterlooWaterloo, Ontario N2L 3GICanadaTel: +1 519 888 4803Fax: +1 519 746 6321E-Mail: [email protected]

Western USA (Region 6)Paul K.L. YuUniv. of California at San DiegoDept. of Elec. and Computer Engrg.Eng. Bldg. Unit 1, Room 3604La Jolla, CA 92093-0407Tel: +1 619 534-6180Fax: +1 619 534-0556E-Mail: [email protected]

REGION 8Eastern Europe & The Former Soviet UnionNinoslav D. StojadinovicFaculty of Electronic EngineeringUniversity of NisBeogradska 14, 18000 NisYugoslaviaTel: +011 381 18 49155/46499Fax: +011 381 18 46 180E-Mail: [email protected]

Scandinavia & Central EuropeMikael L. OstlingDepartment of Electronics, FTEP.O. Box Electrum 229Royal Institute of TechnologyS-164 40 KistaSwedenTel: +011 46 8 752 1402Fax: +011 46 8 752 7850E-Mail: [email protected]

UK, Middle East & AfricaGady GolanCenter for Technical Education and The Open UniversityPO Box 39328Tel Aviv 61392, IsraelTel: +011 972 3 646 0329Fax: +011 972 3 646 5465E-Mail: [email protected]

Western EuropeChristian ZardiniLaboratoire IXLUniversite Bordeaux I351 Cours de la Liberation33405 TalenceFranceTel: +011 33 5 56 84 65 46Fax: +011 33 5 56 37 15 45E-Mail: [email protected]

REGION 10Australia, New Zealand & South AsiaWee Kiong Choi Dept. of Electrical EngineeringNational University of Singapore10 Kent Ridge CrescentSingapore 119260Tel: +011 65 874 6473Fax: +011 65 779 1103E-Mail: [email protected]

Northeast AsiaMs. Hisayo Sasaki MomoseMicroelectronics Engineering LaboratoryToshiba Corporation8, Shin-Sugita-cho, Isogo-kuYokohama, 235-8522 JapanTel: +011 81 45 770 3628Fax: +011 81 45 770 3575E-Mail: [email protected]

East AsiaThaui WangNational Chiao-Tung UniversityInstitute of Electronics1001 TA Hsueh Rd.Hsin-Chu 30049 TaiwanTel: not availableFax: +011 866 3 5724361E-Mail: [email protected]

NEWSLETTER EDITORIAL STAFF

EDITORS

Documents

E IEEE Electron D Devices Society S Newsletterthe needs and interests of bipolar and BiCMOS engineers. The conference covers the design, performance, fabrication, testing and application