DynamiqueMoléculaireet Gravure/Erosion Par Plasmaplasmasfroids.cnrs.fr/IMG/pdf/Atelier_MD_2015_Despiau... · 2016. 9. 29. · 1 DynamiqueMoléculaireet Gravure/Erosion Par Plasma

1

Dynamique Moléculaire et Gravure/Erosion

Par Plasma

E. Despiau-Pujo

Laboratoire des Technologies de la Microélectronique (LTM)

CNRS/UJF-Grenoble 1/CEA

Grenoble, France

Atelier RPF MD/Plasmas Froids - Orléans, France -28-30/10/2015

2

Plasma etching basics

2

RIE =

ion bombardment +

chemical attack by reactive radicals

+ [formation of passivation

layers]

Plasma 1-100 mTorr e-

gaine

Cl

Cl

Cl

Cl

3x10-1 m

Cl2

Cl

Si

SiClxClx+

3x10-7 m

pompage+

+

+

+

+

90 nm

3 μm

+ surface recombination/chimisorption/physisorption/diffusion, électrons & photons…

synergistic processes difficult to identify and control :

• parameter space (chemical composition, Ei, Γi, Γn…) to explore is huge

• experimental analysis of PS interactions in situ & in real time is very difficult

Atomistic Modeling/Simulation

E. Despiau-Pujo - Atelier RPF MD/Plasmas Froids - Orléans - 28-30/10/2015

La DM comme support au développement de procédés

3

Plasma

Γ, Eion, αi, αn, j …

Paramètres :

Surface

eSiClx, eamorphe, EY …

Caractérisations :

Diagnostics plasma

Diagnostics de surface

Recette

Wb, Ws, P, f, DC …

Conditions opératoires :

Simulations MD

modélisations à l’échelle atomique des interactions plasma/surface …

… doivent être validées par les expériences !


DM : Modélisation des interactions plasma/surface

4

Modélisation du substrat

• taille : Lx=Ly~2-8nm, Lz~2-10nm

• 1000-4000 atomes

• conditions périodiques latérales (surface semi-infinie)

• couches statiques au fond (ancrage de la cellule), haut de la cellule libre (dépôt/gravure)

2 couches atomiquesstatiques au fond

conditions libres dansla direction

+z

Si(001)

ions :Cl+, Cl2

+, Ar+

5eV-300eV

neutres :

Cl, Cl2

300K

• impacts aléatoires/alternatifs :

• dose : [1015-1016] ions.cm-2 � ~1-10s de plasma

Modélisation du bombardement plasma

� neutres : thermiques (300K), isotropes, chimiquement réactifs

� ions : énergétiques (5-300eV), incidence normale ! traités comme des neutres rapides ! (cf. neutralisation Auger)


DM : Interactions ion/surface

5

��

Zi > Rcutoff

θ

substrat

��

! ions traités comme neutres rapides !

(cf. neutralisation avant impact par processus de

type Auger ou transfert de charge résonant)

� ions : énergétiques (5-300eV) / incidence (quasi) normale

� Trajectoire (cascade collisionelle) suivie pendant quelques ps, i.e. le temps nécessairepour que l’énergie incidente soit totalement dissipée dans le solide


DM : Interactions ion/surface (bombardement continu)

6

ion impact at normal incidence

Collision cascade : motion of allatoms followed during 1-2 ps

Control of cell temperature :Cool back to 300 K

Search for weakly bound species and calculation of desorption probabilities

Statistics collected : etch products, atomic densities, etc.


DM : Interactions neutres/surface

7

Zi > Rcutoff

substrat

� neutres : thermiques (300K) / isotropes / chimiquement réactifs

� Trajectoire suivie jusqu’à ce que la physique de l’interaction soit

capturée (réflexion, formation d'une liaison chimique avec lasurface, formation et désorption d'un produit volatile, etc.)

Ex: formation d’un produit de

gravure volatile en chimie Si-F

SiF3 + F → SiF4 ↑


DM et interaction PS : Echelles de temps et de longueur

5

� Pas de temps : dt = 0,5-1fs capture de la vibration thermique

� Flux d’ions:

dans un plasma réel, pour S ~ 1500 Å2, Γi = 1mA/cm2 ⇒ 1 ion/millisecondecascade collisionelle ~ 1-2 ps ⇒ accessible en DM

� Flux de neutres :

dans un plasma réel, Γn = 1000Γi ⇒ 1 neutre/microseconderéaction de surface (création de liaison, réflexion…) ~ 50-100 fs ⇒ accessible en DM

! phénomènes se produisant sur des temps longs (diffusion surfacique, relaxation, etc.) ignorés… !


DM et GIR : Objectifs d’une étude DM

Corrélation paramètres plasma � modification du matériau

Paramètres plasma

• énergie ionique Eion

• composition des ions

• composition des neutres

• rapport flux de neutres sur flux d’ions Γ=Γn/Γi

αn ��

�� + ��

αi ��

�� + ��

eSiClxeamorphe

EY

Modification du matériau


10

DM et comparaisons expérimentales

Plasma diagnostics

• RFEA probe: ion energy (Eion)• ion flux probe (Γi)• Mass spectrometer: radical fluxes (Γn)

Applied MaterialsDPS AdvantEdge™

Surface characterization

• XPS résolu en angle (eSiClx)• Ellipsomètre(EY)• MEB/STEM (eSiClx, EY)

Clean room CEA/Leti Minatec


Exemples d’application de simulations

DM pour la Gravure Ionique Réactive (GIR)

Exemples 1

Comparaisons DM/Expérience

E1) Gravure du silicium en plasma fluorocarboné

11

Evolution of fluorosilyl layer (dark horizontal

lines show XPS measurements)

[Humbird, PhD thesis, Berkeley, 2004]


E1) Gravure du silicium en plasma fluorocarboné

12[Humbird, PhD thesis, Berkeley, 2004]

Simulations DMExperimental data


E2) Si02 etching by CFx beam

13[Hamaguchi et al, 2006]

Experimental dataDM

EXP


E3) Interactions of Ions and Radicals with Organic Masking Materials

14

0

1

2

3

4

5

6

0 2E+16 4E+16 6E+16

Fluence (ions/cm2)

EY

(e

qu

iv C

pe

r A

r+)

QCM_500eV_Expt (scaled to 100 eV)*

MD_100eV_5_run_avg

• Organic masking materials: Initial rapid etch � Drastic drop at higher fluence seen experimentally (Ar+ bombardment of PS )

[Vegh, PhD thesis, Berkeley, 2007]


E3) Interactions of Ions and Radicals with Organic Masking Materials

15

Dehydrogenation and heavy crosslinking occur as a result of bombardment, greatly reducing the etch yield (Ar+ bombardment of PS )

Virgin Surface

H:C = 1

C EY ~ 5

~6.5x1016 cm-2 100 eV Ar+

H:C in top 1/3 of cell ~ 0.15

C EY ~ 0.03

~3700 Ar+ impacts

[Vegh, PhD thesis, Berkeley, 2007]


Exemple 2

Aide au développement de procédés

Transistor architectures : Challenges for plasma etching

FDSOI

Box

Si-bulk

7nm

2nm

oxydeSi channel

� conventional 2D bulk transistors cannot be implemented down to sub-20nm node (cf. leakage current, gate polarisation)

⇒ new transistor architectures: multiple-gate (FinFET) or fully depleted SOI (FDSOI)

FinFET

Source

Drain Vertical

walls Grille

oxyde

Si channel

Box

TiN

Poly-Si

SiO2

mask

S D

G

Si

Box

Si channel7nm

oxydes 2nm

Damage-free etching with

unprecedented selectivity and

nanometric precision required

16


17

Limitations of continous-wave inductive plasmas (ICP)

Plasma

1-100 mTorr

+

e-

sheath

Cl

3x10-1 m

Cl2

Cl

Si

SiClxClx+

3x10-7 m

pump+

Cl

Cl

Cl+ ++

Cl

+ +

Cl

…

+Cl

Reactive Ion Etching

=chemical attack by

reactive radicals [300-500K] +

energetic/directional ion bombardment [5-200eV]

(+ photons, electrons…)

Limitations of CW-ICP :

� Eion >15-20eV : plasma-induced damage (PID) ~2-3nm� high fragmentation rate : high etch rate/less control 2-3nm

How to reduce plasma-induced damage ?

Which plasma technology to etch with a nanometric precision ?

Brichon, Despiau-Pujo, Joubert, JVST A 32, 021301 (2014)


18

Ion Energy : A key parameter

2 4 6 8 100

5

10

15

20

25

MD simulation exp Layadi et al. exp LTM

SiC

l x mix

ed la

yer

thic

knes

s (A

)

Ion Energy (eV1/2)

5eV10eV

25eV50eV

100eV

Cl/Cl+ - Γn/Γi = 100

25eV 100eV50eV

depth (nm)

012345

10eV

fluence Cl+ = 3.5x1015 ions/cm2

2 4 6 8 10 120.0

0.5

1.0

1.5

2.0

2.5

3.0

Etc

h Y

ield

(S

i/ion

)

Ion Energy (eV1/2)

MD simulation exp Vitale et al. exp Chang et al. exp LTM

5eV10eV

25eV

50eV

100eV

• Eion ⇒ eSiClx et EY• Eion = key parameterto etch ultrathin Si layers• To maintain eSiClx ≤ 1nm ⇒ Eion ≤ 15eV⇒ interest in low-Te and pulsed plasmas

Brichon, Despiau-Pujo, Mourey, Joubert, J. Appl. Phys. 118, 053303 (2015)


19

Influence of neutral-to-ion flux ratio

Cl/Cl+ - Γn/Γi = 0-1000

0 200 400 600 800 10000

10

20

30

40

5eV 10eV 25eV 50eV 100eV

Neutral-to-ion flux ratio

SiC

l x mix

ed la

yer

thic

knes

s (A

)

depth (nm)

0

1

2

3

4

ions only Γn/Γi = 100

0.00 0.02 0.04 0.06

40

30

20

10

0

-10

Si

density (Å-3)

depth (Å)

Cl

Γ = 100 0.00 0.02 0.04 0.06

40

30

20

10

0

-10

SiCl

density (Å-3)

depth (Å)

Γ = 1000

0 200 400 600 800 10000

1

2

3

4

5

5eV

10eV

25eV

50eV

100eV

Neutral-to-ion flux ratio

Etc

h Y

ield

(S

i/ion

)

Chang et al, JVSTA 16, 217 (1998)• Γ ⇒ eSiClx but EY• Γ = 2d key parameterto control the precision of the etch• Even in CW mode (Eion ≥ 15eV), eSiClx ≤ 1nm if high Γ (≥ 1000)



20

Influence of neutral dissociation rate

0 2 4 6 8 100

5

10

15

20

25

30

35

Ion Energy (eV1/2)

SiC

l x mix

ed la

yer

thic

knes

s (A

)

[Cl-Cl2]/Cl+

Cl/Cl+

Cl2/Cl+

5eV10eV

25eV

50eV

100eV

Clx/Cl+ - Γn/Γi = 100 Cl/Cl+ Cl2/Cl+

2 4 6 8 100.0

0.5

1.0

1.5

2.0

2.5

Ion Energy (eV1/2)E

tch

Yie

ld (

Si/i

on)

[Cl-Cl2]/Cl+

Cl/Cl+

Cl2/Cl+

5eV10eV

25eV

50eV

100eV

• Real plasma always- at least - a bit dissociated⇒ changing the neutral dissociation rate, while maintaining Γ constant, should not influence strongly surface modification.

0

20

40

60

80

100

(a)

Etc

hing

by-

prod

ucts

(%

)

SixCl

y unsat

SixCl

y sat

SiCl4

SiCl2

SiCl Si


0

20

40

60

80

100

Etc

hing

by-

prod

ucts

(%

)


(b)

Cl/Cl+

Cl2/Cl+



21

Influence of ion composition

2 4 6 8 100

10

20

30

40

e S

iClx (

Å)

Eion

(eV1/2)

5eV10eV

25eV

50eV

100eV

Cl2+

Cl+

2 4 6 8 100

1

2

100eV50eV

25eV10eV

5eV

EY

(S

i/ion

)

Eion

(eV1/2)

Cl+

Cl2+

Γ = 0 � only ions Γ = 0 � only ions

2 4 6 8 100

10

20

30

40

e SiC

lx (

Å)

Eion

(eV1/2)

5eV10eV

25eV50eV

100eV

Cl/Cl 2+

Cl/Cl +

Cl/[Cl +-Cl2+]

2 4 6 8 100

1

2

Cl/[Cl +-Cl2+]

EY

(S

i/ion

)

Eion(eV1/2)

5eV10eV

25eV

50eV

100eV

Cl/Cl2+

Cl/Cl +

Γ = 100 Γ = 100

2 Cl+ @XeV� 1 Cl2+ @2XeV

• In presence of Cl radicals, the ion composition does not influence strongly surface modification or etching.


Exemple 4

Aide au développement de procédés

Etude/Compréhension d’un mécanisme

Hydrogen plasma processing of graphene

26

… but relies our capability to grow and integrate it into sophisticated devices

high-speed transistors

Hydrogen storage

bio-chemical sensors

transparent electrodes, flexible touch-screens

� 1-atom-thick planar sheet of sp2-bonded carbon atoms packed in a honeycomb lattice

� 2D structure + outstanding physico-chemical properties

Promising candidate for many novel applications…

22E. Despiau-Pujo - Atelier RPF MD/Plasmas Froids - Orléans - 28-30/10/2015

multilayer graphene

23

Graphene-based nanoelectronics: Technological challenges

� Patterning Graphene Nanoribbons (bandgap)

� Cleaning graphene from polymeric residues

� Atomic Layer Etching (ALE) of multilayer Graphene

Plasma etching(litho transfer)

20 nm 5 nm

Plasma (lateral) etching ?

Etching PMMA residues ?


0.1 1 10 1000.0

0.2

0.4

0.6

0.8

1.0

penetrationreflection

absorption

rea

ctio

n ra

te

Incident H energy (eV)

0K 300K 600K

Statistical runs

Tcell : 0-300-600 K / Ei : [0.1-200] eV

Each {Ei, Ti} : 200 impacts / normal incidence / random loc / refreshed cell

H interaction with basal plane: Influence of EH and TSURF

H+

H+H+

H+H+

Despiau-Pujo, Davydova, Cunge, Graves, J. Appl. Phys. 113, 114302 (2013) 24E. Despiau-Pujo - Atelier RPF MD/Plasmas Froids - Orléans - 28-30/10/2015

0.1 1 10 1000.0

0.2

0.4

0.6

0.8

1.0

penetrationreflection

absorption

rea

ctio

n ra

te

Incident H energy (eV)

0K 300K 600K

H+

H+H+

H+H+

Statistical runs

Tcell : 0-300-600 K / Ei : [0.1-200] eV

Each {Ei, Ti} : 200 impacts / normal incidence / random loc / refreshed cell

H interaction with basal plane: Influence of EH and TSURF

Ei < 0.3 eV = Downstream Plasmas

Basal plane protected

GNR lateral etching by thermal radicals ?

Ei [0.3 ; 15]eV= ICP (pulsed) plasma

Hydrogenation of basal plane: graphene cleaning ?

Ei > 15 eV = CW ICP plasma

H+ penetration through layers: MLG Atomic Layer Etching ? H2 storage ?


GNR Lateral Etching

Plasma etching(litho transfer)

20 nm 5 nm

Plasma (lateral) etching ?

Goal: Opening a bandgap bypatterning GNRs with sub-5 nm

width and well controlled edges


GNR Lateral Etching: Experimental Results

Yang et al, Adv. Mater. 22 (2010)

Xie et al, J. Am. Chem. Soc. 132 (2010)

GNR trimming can be achieved in downstream/remote H2 plasmas

� Etching propagates along ZZ-free edges with ER max at 450°C

� No Lateral Edge Roughness (LER) generation during lateral etching

⇒ Mechanism ?


Cumulative H radicals bombardment of ZZ-GNR at 800K

Z

YX

H impactsMD simulation ⇒ downstream H2 plasma conditions

• GNR area ~ 780Å2 / 340 C atoms

• PBC along Ox (semi-infinite ribbon) / 2 fixed atoms

• Graphene surface temperature: Tsurf = 800 K ~ 450°C

• H isotropic bombardment at EH = Tsurf / random loc


27

Cumulative H radicals bombardment of ZZ-GNR at 800K

Z

YX

H impactsMD simulation ⇒ downstream H2 plasma conditions

• GNR area ~ 780Å2 / 340 C atoms

• PBC along Ox (semi-infinite ribbon) / 2 fixed atoms

• Graphene surface temperature: Tsurf = 800 K ~ 450°C

• H isotropic bombardment at EH = Tsurf / random loc

Fix

ed

ato

ms

initial GNR cell after 1x1018 H/cm2

Y

X

⇒ What is the etching mechanism ?

⇒ What about the etching by-products ?


GNR Lateral Etching Mechanism:

Davydova, Despiau-Pujo, Cunge, Graves, J. Phys. D 48, 195202 (2015) 28

0.0 2.0x1017 4.0x1017 6.0x1017 8.0x10170.0

0.5

1.0

1.5

2.0 edge basal

Fluence (atom/cm2)

0.0

0.2

0.4

0.6

0.8

1.0

H u

pta

ke (

#H

/#C

)

Ca

rbo

n E

tchi

ng

Ra

tio

800K


0.0 2.0x1017 4.0x1017 6.0x1017 8.0x10170.0

0.5

1.0

1.5

2.0 edge basal

Fluence (atom/cm2)

0.0

0.2

0.4

0.6

0.8

1.0

H u

pta

ke (

#H

/#C

)

Ca

rbo

n E

tchi

ng

Ra

tio

800K

GNR Lateral Etching Mechanism: Phase #1

Phase #1: Free Edge hydrogenation

H adsorption barrierless on free edges

⇒ CH2 formation by increasing H dose

⇒ Energy barriers reduced for Hadsorption on basal plane


Davydova, Despiau-Pujo, Cunge, Graves, J. Phys. D 48, 195202 (2015)

0.0 2.0x1017 4.0x1017 6.0x1017 8.0x10170.0

0.5

1.0

1.5

2.0 edge basal

Fluence (atom/cm2)

0.0

0.2

0.4

0.6

0.8

1.0

H u

pta

ke (

#H

/#C

)

Ca

rbo

n E

tchi

ng

Ra

tio

800K



Phase #2: Unzipping of edge-C atoms

Inner-C atoms hydrogenation

⇒ sp2-sp3 rehybridization

⇒ mechanical stress

⇒ unzipping events (C-C bond breaking)

⇒ suspended linear C chains



0.0 2.0x1017 4.0x1017 6.0x1017 8.0x10170.0

0.5

1.0

1.5

2.0 edge basal

Fluence (atom/cm2)

0.0

0.2

0.4

0.6

0.8

1.0

H u

pta

ke (

#H

/#C

)

Ca

rbo

n E

tchi

ng

Ra

tio

800K



Phase #2: Unzipping of edge-C atoms

Local E deposition, H adsorption, CH2 formation

⇒ rupture of suspended C chains

⇒ series/cascade of « sputtering » events

⇒ propagation along ZZ-edge without LER

28

Phase #3: C atoms sputtering



GNR Lateral Etching Mechanism: By-products

after 1x1018 H/cm2

� Etching by-products = C atoms and C2 molecules

� Contrary to expectations, no formation of

volatile CxHy etch products

⇒ root cause explaining why the ribbon edges

can be sharp-cut (without LER generation)



30

GNR Lateral Etching Mechanism

MD: H continuous

exposure of GNR at 800K

Atomic-resolution observation of GNR

under HRTEM at 80kVChuvilin et al, New J. Phys 11 (2009)


Exemple 5

Etude de la faisabilité d’un concept

31

Towards nanometric precision etching of ultrathin Si layers

� At steady state

one needs to have Eion ≤ 15eV or Γ ≥ 1000

• Low-Te plasmas

• Pulsed plasmas (operating at low DC)

< 1 nm

To maintain eSiClx ≤ 1nm :

� Control the dynamics of the SiClx reactive layer formation ?

MD to verify the feasibility of the concept

Brichon, Despiau-Pujo, Joubert, JVST A 32, 021301 (2014)



32

Pulsed injection of reactive gases: Concept

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

5

10

15

20

0 80 160 240 320 400 480 560

100eV

50eV25eV

10eV

Temps de plasma (ms)

e SiC

lx (

Å)

Fluence Cl+ (1015 ions/cm2)

5eV

Step 1 : stop the growth of the SiClx layer at its early stage (1nm)

1nm

Step 2 : remove the 1nm-thick SiClx layer with Ar + ions

1nm

Ar plasma

?

• Step 1 : Formation time of the SiClx layer ? Plasma parameters ?• Step 2 : SiClx layer removal efficiency ? Selectivity SiClx/Si blanket ?


Injection of Ar gas

t1 ~ 100 ms

t2 ~ 10 sInjection of reactive gas

33

Gas-pulsing: Technological/Hardware solutions

++

+e-

Cl2Ar

Time

Mix

ed la

yer t

hick

ness

1 nm

0 nm

Step 1 Step 1Step 2 Step 2

Ultrafast gas injection (t ~ 100 ms) compatible ?

Hardware development by equipment suppliers


34

Step 1: Timescale to build a 1nm-thick SiClx reactive layer

To obtain timescales compatible with hardware gas injectors (t ≥ 100ms) :1. Eion ≤ 25eV2. high Γ (≥1000)3. low ion flux j (≤0.5mA/cm2)

depth (nm)

0

1

2

3

4

5

67

~1nm

Flux ratio Γ = Γn/Γi Ion composition αi Neutral composition αn

25 50 75 1000

100

200

300

Γ=500

Γ=1000

Γ=100

Tem

ps p

our

obte

nir

1nm

(m

s)

Energie ionique (eV)0 25 50 75 100

Energie ionique (eV)

Cl/Cl2+

Cl/Cl +

0 25 50 75 100

Cl/Cl +

Cl2/Cl+


j = 1mA/cm2 j = 1mA/cm2 j = 1mA/cm2

0 25 50 75 100


Cl/Cl2+

Cl/Cl +

0 25 50 75 100

Cl/Cl +

Cl2/Cl+

Energie ionique (eV)25 50 75 100

0

100

200

300

Γ=500

Γ=1000

Γ=100

Tem

ps p

our

obte

nir

1nm

(m

s)


j = 0.5mA/cm2 j = 0.5mA/cm2

j = 0.5mA/cm2

Tim

e (m

s)

[Brichon, PhD thesis, LTM 2014]

22

E3) Step 2: SiClx layer removal in Ar plasma

0 250 500 750 1000 12500

20

40

60

80

1000 20 40 60 80 100

100eV

50eV

Temps de plasma (s)

Ato

mes

Cl r

esta

nts

(%)

Fluence Ar+ (1015 ions/cm2)

10eV

25eV

200eV

Ar@25eV Ar@100eV Ar@200eVAr@50eV

depth (nm)

0

1

2

3

4

5

67

Ar@10eV

Eion excluded :• 10eV (time for SiClx removal too long)• 100eV, 200eV (Si etching/amorphisation too high)

Fair compromise : 50eV… but eamorph ~ 2nm ⇒ reproductibility of cycle ?

fluence Ar+ = 0 ions/cm2fluence Ar+ = 34.1015 ions/cm2fluence Ar+ = 69.1015 ions/cm2fluence Ar+ = 104.1015 ions/cm2fluence Ar+ = 138.1015 ions/cm2

Cl r

emai

ning

(%)

Plasma time (s)

36

Reproductibility of cycle (step1/step2)

Step 2Step 1

Cycle I

?

depth (nm)

0

1

2

3

4

5

67

0

1

2

3

4

5

67

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

5

10

15

0 160 320 480 640 800 960 1120

Temps de plasma (ms)e S

iClx (

Å)

Fluence Cl+ (1015 ions/cm2)

Cycle I

Cycle II

Cl/Cl+ @25eV -Γn/ Γi =100

Step 1

Step 1

Cycle II

Plasma time (ms)

cycle is reproductible

Step 2

0 200 400 600 8000

20

40

60

80

1000 16 32 48 64

Temps de plasma (s)

Ato

mes

Cl r

esta

nts

(%)

Fluence Ar+ (1015 ions/cm2)

Cycle I

Cycle II

Step 2

Ar + @50eV

Cl r

emai

ning

(%)

Plasma time (s)

0

1

2

3

4

5

67

37

Conclusion

� Méthodes/techniques de simulation DM des interactions plasma/surface

� neutres : thermiques (300K), isotropes, chimiquement réactifs

� ions : énergétiques (5-300eV), incidence normale, traités comme des neutres rapides

� Hypothèses/approximation relativement aux échelles de temps/longueur considérées

� Exemples d’application des simulations DM à la gravure ionique réactive (GIR)

� Comparaison résultats numériques / données expérimentales (diagnostics plasma + surfaces)

� DM pour la compréhension de mécanismes de gravure à l’échelle atomique

� DM comme support/aide au développement de procédés

� DM comme outil d’étude de la faisabilité d’un concept technologique


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DynamiqueMoléculaireet Gravure/Erosion Par Plasmaplasmasfroids.cnrs.fr/IMG/pdf/Atelier_MD_2015_Despiau... · 2016. 9. 29. · 1 DynamiqueMoléculaireet Gravure/Erosion Par Plasma