DynaPhoPy: A code for extracting phonon quasiparticles from moleculardynamics simulations

Abel Carrerasa,∗, Atsushi Togob, Isao Tanakaa,b

aDepartment of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, JapanbCenter for Elements Strategy Initiative for Structural Materials(ESISM), Kyoto University, Kyoto 606-8501, Japan

Abstract

We have developed a computational code, DynaPhoPy, that allow us to extract the microscopic anharmonic phononproperties from molecular dynamics (MD) simulations using the normal-mode-decomposition technique as presentedby Sun et al. [T. Sun, D. Zhang, R. Wentzcovitch, 2014]. Using this code we calculated the quasiparticle phononfrequencies and linewidths of crystalline silicon at different temperatures using both of first-principles and the Tersoff

empirical potential approaches. In this work we show the dependence of these properties on the temperature usingboth approaches and compare them with reported experimental data obtained by Raman spectroscopy [M. Balkanski,R. Wallis, E. Haro, 1983 and R. Tsu, J. G. Hernandez, 1982].

Keywords: Anharmonicity, phonon, linewidth, frequency shift, molecular dynamics

PROGRAM SUMMARYManuscript Title: DynaPhoPy: A code for extracting phononquasiparticles from molecular dynamics simulationsAuthors: Abel Carreras, Atsushi Togo and Isao TanakaProgram Title: DynaPhoPyJournal Reference:Catalogue identifier:Licensing provisions: MIT LicenseProgramming language: Python and CComputer: PC and cluster computersOperating system: UNIX/OSXRAM: Depends strongly on number of input data (several Gb)Number of processors used: 1-16Supplementary material:Keywords: anharmonicity, phonon, linewidth, frequency shift,molecular dynamicsClassification: 7.8 Structure and Lattice DynamicsExternal routines/libraries: phonopy, numpy, matplotlib,scipy and h5py python modules. Optional: FFTW and CudaSubprograms used:Catalogue identifier of previous version:*Journal reference of previous version:*Does the new version supersede the previous version?:*Nature of problem:Increasing temperature, a crystal potential starts to deviatefrom the harmonic regime and anharmonicity is getting tobe evident[1]. To treat anharmonicity, perturbation approach

∗Corresponding author.E-mail address: abelcarreras83@gmail.com

often describes successfully phenomena such as phononlifetime and lattice thermal conductivity. However it failswhen the system contains large atomic displacements.Solution method:Extracting the phonon quasiparticles from molecular dynam-ics (MD) simulations using the normal-mode-decompositiontechnique.Reasons for the new version:*

Summary of revisions:*

Restrictions:Quantum effects of lattice dynamics are not considered.Unusual features:

Additional comments:

Running time:It is highly dependent on the type of calculation requested.It depends mainly on the number of atoms in the primitivecell, the number of time steps of the MD simulation and themethod employed to calculate the power spectra. Currentlytwo methods are implemented in DyaPhoPy: The Fouriertransform and the maximum entropy methods. The Fouriertransform method scales to O [N2] and the maximum entropymethod scales to O [N × M] where N is the number of timesteps and M is the number of coefficients.

Preprint submitted to Computer Physics Communications August 14, 2017

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1. Introduction

Lattice dynamics calculations are a powerful toolto characterize the collective motion of atoms incrystalline materials. These calculations allow usto describe the thermodynamic behavior of crys-tals. For nearly harmonic crystals the harmonicapproximation[2] is commonly used. Under this ap-proximation the temperature dependence of phonon fre-quencies is not described. To study this dependence it isnecessary to consider the anharmonicity of crystals.

When we expand the crystal potential into serieswith respect to the phonon coordinates, the weak anhar-monicity is expected to be well described with lower or-der phonon-phonon interactions. These interactions in-duce phonon frequency shift and lifetime, which may berepresented by the phonon quasiparticle picture. Thesephonon quasiparticles are observable experimentally,e.g, by Raman spectroscopy and neutron scattering.

In this work, we use molecular dynamics (MD) sim-ulations to analyze the crystal anharmonicity as a func-tion of temperature. In this analysis, the power spec-trum of the mass-weighted velocity obtained from MDis fitted to model-spectral-function shapes to calculateboth quasiparticle phonon frequencies and linewidths.For this purpose we developed a computational code inwhich the normal-mode-decomposition technique[3] asreported by Sun et al.[4] is implemented. This tech-nique allow us to extract the phonon quasiparticles fromMD trajectories by projecting the atomic velocities ontothe phonon eigenvectors.

We applied our code to silicon to obtain the quasi-particle phonon frequencies and linewidths at differenttemperatures. To run the MD simulations, we employedfirst-principles and the Tersoff empirical potential[5] ap-proaches. The first-principles calculations give us accu-rate energy landscapes, though they are computationallyexpensive. On the other hand, the use of empirical po-tentials allow us to run the MD simulations with longersimulation times and larger supercell sizes than usingfirst-principles calculations, which is of major impor-tance to densely sample the reciprocal space. As a re-sult of our calculations, we found that the experimentalphonon frequency shifts are well reproduced using bothfirst-principles and the Tersoff empirical potential ap-proaches for silicon. However, in the phonon linewidthcalculations we observe a disagreement between bothapproaches. We shortly discuss these results by compar-ing them with the experiments by Raman spectroscopyavailable in literatures[6, 7].

2. Anharmonic model

In a perfect crystal, the atomic position r jl can bewritten as

r jl(t) = r0jl + u jl(t), (1)

where r0jl is the equilibrium position, and u jl is the

atomic displacement from r0jl at the lattice point l and

atomic index j of each lattice point. Within the har-monic approximation the atomic displacement is de-scribed as a superposition of phonon normal modes:

u jl(t) =1√Nm j

∑qs

e j(q, s) eiq·r0jl uqs(t), (2)

where N is the number of lattice points, m j is the atomicmass, e is the phonon eigenvector, q and s are the wavevector and branch, respectively, and uqs(t) is the dis-placement in the phonon coordinate. These phononmodes are obtained as the solution of the eigenvalueproblem of the dynamical matrix

D(q) e(q, s) = ω2qs e(q, s), (3)

where ωqs is the phonon frequency and D(q) is the dy-namical matrix, whose elements are defined as

Dαβ( j j′,q) =1

(m jm j′ )1/2

∑l′

Φαβ

(j j′

0l′

)eiq(r0

j′ l′−r0j0),

(4)where α and β are the indices of the Cartesian coordi-nates. Φ is the harmonic force constants matrix whoseelements are given by

Φαβ

(j j′

ll′

)=

∂2W∂u jlα∂u j′l′β

. (5)

where W is the crystal potential energy.To include the anharmoncity we use the phonon

quasiparticle model[8]. In this model, the atomic ve-locity v jl(t) is defined to be similar to Eq. (2) as

v jl(t) =1√Nm j

∑qs

e j(q, s) eiq·r jl vqs(t), (6)

where vqs(t) is the velocity of the phonon quasiparti-cle. We consider that the phonon quasiparticle is a goodmodel if the power spectrum of vqs(t), i.e., the Fouriertransform of the autocorrelation function of vqs(t), hasa well defined spectral shape. This power spectrum isthe central information that we want to compute and itis given as

Gqs(ω) = 2∫ ∞

−∞

⟨v∗qs (0) vqs (τ)

⟩eiωτdτ, (7)

2

where Gqs(ω) is the one-sided power spectrum and〈v∗qs (0) vqs (τ)〉 is the autocorrelation function of vqs(t)defined as

〈v∗qs (0) vqs (τ)〉 = limt′→∞

1t′

∫ t′

0vqs(t + τ) v∗qs(t)dt. (8)

3. Methodology

We use the normal-mode-decomposition technique toobtain vqs(t) from MD simulations. In this technique,the atomic velocities are projected onto a wave vector qas

vqj (t) =

√m j

N

∑l

e−iq·r0jl v jl(t), (9)

Then, vqj (t) are projected onto a phonon eigenvector

e(q, s) by

vqs(t) =∑

j

vqj (t) · e

∗j(q, s). (10)

Finally, the power spectrum of vqs(t) is calculated us-ing Eq. (7). Sun and Allen showed the approximateexpression of this power spectrum to have a Lorentzianfunction shape[9]. This is expected to work well whenthe phonon frequency shift and linewidth are both small.Based on this approximation, we employ a Lorentzianfunction form to fit Gqs(ω):

Gqs(ω) ≈〈|vqs(t)|2〉

12γqsπ

(1 +

(ω−ωqs

12 γqs

)2) . (11)

From this fitting the quasiparticle phonon frequencyωqs is determined as the peak position and the phononlinewidth γqs as the full width at half maximum(FWHM).

The wave-vector-projected power spectrum Gq(ω)and full power spectrum G(ω) are written as

Gq(ω) = 2∑

jα

∫ ∞

−∞

⟨vq∗

jα (0) vqjα (τ)

⟩eiωτdτ (12)

and

G(ω) = 2∑jlα

∫ ∞

−∞

⟨v∗jlα (0) v jlα (τ)

⟩eiωτdτ, (13)

respectively. Since the phonon eigenvectors e(q, s) areorthonormal, Eqs. (7), (9) and (13) satisfy the followingrelation:

G(ω) =∑

qGq(ω) =

∑qs

Gqs(ω). (14)

This relation allow us to define the total power of G(ω)as∫ ∞

0G(ω)dω =

∑qs

∫ ∞

0Gqs(ω)dω =

∑qs

〈|vqs(0)|2〉,

(15)where

〈|vqs(0)|2〉 = limt′→∞

1t′

∫ t′

0vqs(t)v∗qs(t)dt. (16)

This shows that the total power of G(ω) is related withthe kinetic energy as∫ ∞

0G(ω)dω = 2〈K〉, (17)

since∑qs

〈|vqs(0)|2〉 =∑

jl

m j〈|v jl(0)|2〉 = 2〈K〉, (18)

where v jl(t) is the atomic velocity and 〈K〉 is the aver-age vibrational kinetic energy of the system that we areinterested in. At the classical limit,

〈K〉 =32

NnakBT (19)

where na is the number of atoms per lattice point and kB

the Boltzmann constant.Within the harmonic approximation, the phonon den-

sity of states (DOS) is related to the Fourier transform ofthe velocity autocorrelation function within a constantfactor[1, 10]. We employ this relation in the phononquasiparticles model along with the result in Eq. (14) todefine the quasiparticle DOS g(ω) as

g(ω) =1

3NnakBTG(ω). (20)

4. Software overview

DynaPhoPy is mainly written in Python and its per-formance bottle-neck is treated by C. The purposeof this software is to extract quasiparticle phononfrequencies and linewidths from MD trajectories us-ing the normal-mode-decomposition technique[3]. Atthe present time DynaPhoPy prepares interfaces toVASP[11, 12] and LAMMPS[13] MD trajectories andrelies on Phonopy[14] to calculate the phonon eigenvec-tors. To do this calculation it requires the information

3

about the crystal structure and the forces on the atoms.To calculate the quasiparticle phonon frequencies andlinewidths, first, the mass-weighted velocity is projectedonto a wave vector q to obtain vq(t) (Eq. (9)). Next, Dy-naPhoPy interfaces with Phonopy to obtain the phononeigenvector at the wave vector q and the band index s,and vq(t) is projected onto this phonon eigenvector toobtain vqs(t) (Eq. (10)). Finally, the power spectrum ofvqs(t) is calculated (Eq. (7)) and fitted to the Lorentzianfunction (Eq. (11)). To increase the numerical accuracyof the power spectrum DynaPhoPy averages the powerspectra at symmetrically equivalent wave vectors.

In addition, DynaPhoPy uses the quasiparticlephonon frequencies ωqs calculated at commensurate q-points corresponding to the chosen supercell size to in-terpolate ωqs at incommensurate q-points. To performthis we define a crudely renormalized force constantsmatrix Φ whose elements are

Φαβ

j j′

0l′

=

√m jm j′

N

∑q

Dαβ( j j′,q) e−iq(r0jl−r0

j0),

(21)with

Dαβ( j j′,q) =∑

s

ω2qse jα(q, s)e∗j′β(q, s). (22)

The renormalized force constants are useful to computethe thermodynamic properties including the anharmoniccorrection[15]. In this work we do not use them sincewe want to focus on the analysis of the frequency shiftsand linewidths, which is presented in the following sec-tions.

5. Computational details

Crystalline silicon is a widely studied material, com-posed by a single element and packed in a cubic struc-ture at ambient condition. Due to the high importance ofits properties and applications there is a large amount ofinformation available in literatures, both theoretical andexperimental. This makes silicon a suitable candidatefor benchmarking our code.

In this work we present the quasiparticle phononfrequencies and linewidths of silicon as a function oftemperature. For this purpose we used MD simu-lations computed using two different approaches, i.e,first-principles and the Tersoff empirical potential, forwhich VASP[11, 12] and LAMMPS[13] codes wereemployed, respectively. In Tables 1 and 2 we summa-rize the major parameters used to perform these calcu-lations.

Table 1Structural and computational parameters used in the first-principlesMD simulations of silicon with VASP code.

Parameters

Lattice parameter 5.45 Å

k-point sampling Monkhorst-Pack[16]2x2x2

Methodology Density functionaltheory and GGA(PBESol[17])

Thermostat Nose-Hoover[18]

Cutoff energy 300 eV

Number of atoms 64

Number of time steps 500000

Relaxation time steps 20000

Time step length 2.0 fs

First-principles calculations were used as referenceswith respect to calculations by the Tersoff empirical po-tential, since we expect them to have the higher level ofprediction. MD simulations using the empirical poten-tial are computationally less demanding, therefore weuse them to analyze the dependency of the MD supercellsize on the quasiparticle phonon properties. Phonopycode was used to obtain the phonon eigenvectors. Har-monic force constants were calculated by the finite dis-placement method using the 2x2x2 supercell of the con-ventional unit cell. We also employed Phonopy-qha tocalculate the thermal expansion contribution to the fre-quency shift based on the quasi-harmonic approxima-tion (QHA).

To calculate the power spectra we used two differentmethods: the Fourier transform (FT) method (AppendixA) and the maximum entropy (ME) method (AppendixC). According to our tests, the power spectra obtainedusing the ME method gives a smoother profile, how-ever its calculation requires a larger number of MD timesteps than that of the FT method. In small supercellswe observed that the frequency shifts and linewidths ob-tained from Gqs(ω) calculated using the MEM methodare slightly overestimated with respect to those calcu-lated using the FT method. In contrast, for the cal-culation of the total power of G(ω) we obtain similarresults using both methods. In this study we used theME method to calculate the full power spectrum G(ω)

4

Table 2Structural and computational parameters employed in the MDsimulations of silicon using the Tersoff empirical potential withLAMMPS code.

Parameters

Lattice parameter 5.45 Å

Empirical potential Tersoff[5]

Thermostat Nose-Hoover[18]

Number of atoms 64 and 512

Number of time steps 1000000

Relaxation time steps 500000

Time step length 1.0 fs

and the FT method to calculate the frequency shift andlinewidth from Gqs(t).

6. Results and discussion

Fig. 1 shows the phonon band structures and DOSobtained using harmonic lattice dynamics calculations,where no temperature effect is considered. We use themas simple reference points of the band structure shapesto discuss the following results.

In Sec. 6.1 we show the power spectra G(ω), Gq(ω)and Gqs(ω) obtained from the MD simulations. FromG(ω) we check the convergence of the MD simulationsby calculating its total power, which is related to the av-erage kinetic energy (Eq. (17)), and comparing it withthe classical limit. In Gq(ω) we observe the differentpeaks that correspond to quasiparticle phonon modeswith wave vector q. We assign these peaks in Gq(ω)to phonon modes at commensurate q-points in Fig. 1.Analyzing the power spectra Gqs(ω) we observe that thequasiparticle phonon modes are well separated using thephonon eigenvectors basis.

In Sec. 6.2 we show the frequency shifts obtainedfrom MD simulations as a function of temperature. Weinclude the contribution of the thermal expansion to thefrequency shift employing the QHA. Then, we comparethe results obtained using first-principles and the Tersoff

empirical potential approaches with the Raman experi-ments, and finally we analyze the effect of the supercellsize on the computed results.

In Sec. 6.3 we show the phonon linewidths ob-tained from MD simulations using the two different ap-proaches and analyze their dependence on the supercellsize.

(a)

43210

DOS

18

16

14

12

10

8

6

4

2

0

Freq

uenc

y [T

Hz]

Γ X Γ LWave vector

[ε,0,ε] [ε,ε,2ε] [ε,ε,ε]

TO

LO

LA

TA

LTO

LOATO

TA

(b)

43210

DOS

18

16

14

12

10

8

6

4

2

0

Freq

uenc

y [T

Hz]

Γ X Γ LWave vector

[ε,0,ε] [ε,ε,2ε] [ε,ε,ε]

LOA

TO

TA

TO

LO

LA

TA

LTO

Fig. 1. Harmonic phonon band structure (left) and DOS (right) ofsilicon calculated using (a) first-principles and (b) the Tersoff

empirical potential approaches. The labels transversal (T ),longitudinal (L), acoustic (A) and optical (O) indicate the phononbranches. Phonon DOS is normalized to the number of phononmodes in the primitive cell.

6.1. Power spectra

The full power spectra G(ω) at different temperaturescalculated using first-principles and the Tersoff empir-ical potential approaches are shown in Fig. 2. Thesepower spectra correspond to the superposition of thepeaks of quasiparticle phonon modes at commensurateq-points (Eq. (14)) of the supercell of 64 atoms. Thearea underneath correspond to the total vibrational ki-netic energy while the position of each peak indicatesthe frequency of a phonon quasiparticle. However, inthis power spectrum the peaks are highly overlappedand the individual analysis of each phonon quasiparti-cle cannot be performed. As the temperature increasesthe peaks become wider and their position is displacedto lower frequencies. This behavior is due to the an-harmonicity. The number of peaks is small since thenumber of phonon modes represented in each MD sim-ulation box is proportional to the number of atoms in thesupercell. Therefore, by our choices of supercell sizes,the shapes of G(ω) largely differ from the DOS shown

5

in Fig. 1. The differences observed between the re-sults obtained using first-principles and the Tersoff em-pirical potential are relatively small but they are morenoticeable in G(ω) than in the phonon band structure.This happens because G(ω) only includes informationof phonon at commensurate q-points while the phononband structure and DOS shown in Fig. 1 include phononinterpolated at non-commensurate q-points.

(a)

7

6

5

4

3

2

1

0

G(ω

) [e

V ps

]

20151050Frequency [THz]

400 K 600 K 800 K 1000 K 1200 K 1400 K

(b)

7

6

5

4

3

2

1

0

G(ω

) [e

V ps

]

20151050Frequency [THz]

400 K 600 K 800 K 1000 K 1200 K 1400 K

Fig. 2. Full power spectra G(ω) of silicon obtained from MDsimulations calculated using (a) first-principles and (b) the Tersoff

empirical potential approaches. The power spectra were calculatedusing the ME method. The supercell of 64 atoms was used.

In Fig. 3 we compare the average kinetic energies perphonon mode obtained from G(ω) as

12Nl

∫ ∞

0G(ω)dω (23)

with the classical limit, where Nl is the number of de-grees of freedom of the system. In LAMMPS calcula-tions we employed Nl = 3na while in VASP we used

Nl = 3na − 3 due to the different treatments of rigidtranslation in these codes. In contrast to LAMMPS,VASP adds three additional restrictions to the system bykeeping the center of mass constant to avoid the latticedrift during the MD simulation. The results obtainedfor the average kinetic energy show an excellent agree-ment with the classical limit at all temperatures in bothVASP and LAMMPS calculations. This indicates thatthe full power spectrum is well reproduced using theME method.

7x10-2

6

5

4

3

2

1

0

Kine

tic e

nerg

y [e

V]

1400120010008006004002000Temperature [K]

Classical limit (1/2 kBT) MD - First-principles MD - Empirical potential

Fig. 3. Kinetic energies per phonon mode of silicon obtained fromMD simulations as a function of temperature compared with theclassical limit ( 1

2 kBT ). MD simulations were run by usingfirst-principles (red crosses) and the Tersoff empirical potential(green circles) approaches with the supercell of 64 atoms. The MEmethod was employed to calculate the full power spectra G(ω)kinetic energies. The blue line depicts the classical limit.

In Fig. 4 we show the wave-vector-projected powerspectra Gq(ω) of silicon at Γ, X, and L points obtainedfrom the first-principles MD simulations at 800 K usingthe FT method. In these power spectra we can easilydistinguish the peaks corresponding to each individualquasiparticle phonon mode. From the position of eachpeak we extract its phonon frequency. We use this in-formation to assign each peak to a branch of the phononband structure shown in Fig 1.

At Γ point (solid blue curve) we observe only onepeak that corresponds to the LTO branch. The acousticmode at Γ point should not be observed as shown in Fig.4. This acoustic phonon mode at Γ point correspondsto lattice translations which are restricted in VASP MDsimulations. At X (dashed red curve) and L (dottedgreen curve) points we observe three and four peaksrespectively. This agrees with the number of phononbranches obtained in the phonon band structure in Fig.1.

Fig. 5 shows the power spectra Gq(ω) and Gqs(ω) at

6

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

G q(ω

) [e

V ps

]

20151050Frequency [THz]

TATA

LOA

TO

LALO

TO

LTO

Γ X L

Fig. 4. Wave-vector-projected power spectra Gq(ω) at Γ (blue), X(red) and L (green) points. The power spectra are calculated fromfirst-principles MD simulations at 800 K using the FT method. Thelabels transversal (T ), longitudinal (L), acoustic (A) and optical (O)indicate the corresponding phonon branches.

Γ, X and L points calculated using first-principles andthe Tersoff empirical potential. We observe similar re-sults in both approaches. In both cases the projection onthe distinguishable phonon modes show a single peakwith a Lorenzian function shape (Eq. (11)). We ob-serve that each Gqs(ω) matches with one of the peaks inthe corresponding Gq(ω). This shows that the phononmode decomposition of the MD trajectories has beenperformed successfully.

6.2. Frequency shiftsHere frequency shift refers to the change of the

phonon frequency with respect to temperature. At con-stant pressure condition, the frequency shift is com-posed of two main contributions: the intrinsic latticeanharmonicity ∆ωA

qs and the crystal thermal expansion∆ωE

qs. We approximate the total frequency shift ∆ωqs as

∆ωqs ≈ ∆ωAqs + ∆ωE

qs, (24)

where ∆ωAqs and ∆ωE

qs are computed separately. ∆ωAqs

is calculated from MD simulations at constant volumeconditions and it is measured with respect to the cor-responding harmonic frequency obtained by the latticedynamics calculation. ∆ωE

qs is calculated based on QHAby the following equation:

∆ωEqs(T ) = ωqs[V(T )] − ωqs(V0), (25)

where V(T ) is the equilibrium cell volume at the giventemperature T and zero pressure, which is obtained bythe QHA calculation using phonopy-qha, and V0 the ref-erence cell volume at 0 K and zero pressure.

In Fig. 6 we show ∆ωAqs at Γ, X and L points as a func-

tion of temperature obtained using first-principles andthe Tersoff empirical potential. We observe a qualita-tive agreement between both approaches. The tendencyof ∆ωA

qs with the temperature is similar and the ordersof the different branches mostly agree. At these threewave vectors, the frequency shifts show a linear ten-dency with negative slope. This is an expected behaviorof the frequency shift when the anharmonicity is weak,i.e., ∆ωqs � ωqs. However we observe an unexpectedcurvature of the frequency shift tendency of some opti-cal modes at high temperatures in the results obtainedusing the Tersoff empirical potential. This behavior isnot observed in the first-principles calculations.

In Fig. 7 we show ∆ωEqs obtained using first-

principles and the Tersoff empirical potential. In gen-eral, we also observe a good qualitative agreement be-tween both approaches. It has to be noted, however, thatthe results obtained using the Tersoff empirical potentialshow systematically lower ∆ωE

qs than those obtained byfirst-principles . This is specially noticeable in the LTObranch at Γ point and the TA branches at X and L points.

In Fig. 8 we show the computed results obtained forthe total frequency shift ∆ωqs compared with experi-mental results obtained by Raman spectroscopy. Theexperimental frequency shift is measured with respectto the corresponding estimated harmonic frequency at 0K as described by Cardona and Ruf[19]. Adding thethermal expansion contribution to the frequency shiftcalculated using the Tersoff empirical potential affectsmostly to the acoustic modes. This cancels the curva-ture observed at high temperatures resulting in a morelinear tendency with the temperature. The results ob-tained from the MD simulations show in general a goodagreement with the experimental data. We obtain an ex-cellent agreement at Γ point using both first-principlesand the Tersoff empirical potential approaches and wefind very similar tendencies with the temperature at Xand L points.

To analyze the supercell size effect on the frequencyshifts we calculated the frequency shifts from MD sim-ulations using the Tersoff empirical potential and thesupercell of 512 atoms. In Fig. 9 we compare the re-sults obtained using the supercells of 64 and 512 atoms.As can be observed, the differences between them arenot significant. Therefore we consider that the supercellsize effect on the frequency shifts is small and the 64atoms supercell is sufficient to describe the frequencyshift of silicon. This is attributed to short interactionrange among atoms in silicon.

7

6.3. Phonon linewidths

Using MD simulations we computed the phononlinewidths measuring the FWHM of the peak obtainedfrom each Gqs(ω) fitted to the Lorentzian function ofEq. (11). The calculated phonon linewidths are shownin Fig. 10. In this figure we compare the results ob-tained using first-principles with the ones obtained us-ing the Tersoff empirical potential. We also include theexperimental results obtained by Raman spectroscopy atΓ point. As can be seen in Fig. 10 the linewidths calcu-lated using both approaches agree with the experimen-tal result at Γ point. However we observe a discrepancybetween the results calculated using first-principles andthe Tersoff empirical potential approaches at X andL points. The linewidths obtained for the TO andLA branches using first-principles show much largerlinewidths at high temperatures than the ones calculatedusing the Tersoff empirical potential. Unfortunately, wewere not able to find experimental results for those wavevectors in literatures.

To analyze the effect of the supercell size on thelinewidth we employed the Tersoff empirical potentialto compute MD simulations using the supercell of 512atoms. In Fig. 11 we compare the phonon linewidthsobtained using the supercells of 64 and 512 atoms.In this figure we observe a weak dependence of thelinewith with the supercell size. Despite small differ-ences observed between the two supercell sizes, weconsider that they occur because the width measuredfrom the fitted power spectrum is very sensitive to smallchanges in its spectral shape. Therefore, we do not ex-pect large differences in the linewidth using larger su-percells and we think that the supercell of 64 atoms issufficient to analyze the linewidths of silicon with ouracceptable accuracy.

7. Conclusions

We have implemented the phonon-mode-decomposition technique following the schemeproposed by Sun et. al[4]. This methodology providesa systematic procedure to calculate the microscopicphonon properties including anharmonicity to arbitraryorder from MD simulations.

To test our implementation we computed the fre-quency shifts and linewidths of crystalline silicon at Γ,X and L points using first-principles and the Tersoff em-pirical potential approaches. Using first-principles weobtained a good agreement of the frequency shift andlinewidth with the experiments of Raman spectroscopy.

In spite of the limitations of empirical potentials, the fre-quency shifts calculated using the Tersoff empirical po-tential showed a good agreement with the experimentsand the first-principles calculations. However, the re-sults obtained for the linewidths showed some discrep-ancies with respect to the first-principles calculations atthe X and L points.

This study was also a good test of the treatment ofanharmonicity on the Tersoff empirical potential. Webelieve that this methodology and our software are use-ful not only to study anharmonic materials but also todevelop and clarify new empirical potentials that con-siders the anharmonicity.

At the present time, first-principles MD simulationsare still computationally expensive. However, due tothe increase in power of computers, we expect that thesecalculations will be easily accessible in the near future.

8. Acknowledgments

This study was supported by a Grant-in-Aid for Sci-entific Research on Innovative Areas “Nano Informat-ics” (Grant No. 25106005) from the Japan Society forthe Promotion of Science (JSPS). We also would like toexpress our appreciation to Terumasa Tadano for fruitfuldiscussions.

9. References

References

[1] M. T. Dove, Introduction to lattice dynamics, Vol. 4, Cambridgeuniversity press, 1993.

[2] D. C. Wallace, Thermodynamics of crystals, Courier Corpora-tion, 1998.

[3] A. McGaughey, Predicting phonon properties from equilib-rium Molecular Dynamics simulations, Annu. Rev. Heat Transf.(2013) 49–87.

[4] T. Sun, D. Zhang, R. Wentzcovitch, Dynamic stabilization of cu-bic CaSiO3 perovskite at high temperatures and pressures fromab initio molecular dynamics, Phys. Rev. B Condens. MatterMater. Phys. 89 (2014) 094109/1–094109/9.

[5] J. Tersoff, Empirical interatomic potential for silicon with im-proved elastic properties, Phys. Rev. B 38 (14) (1988) 9902.

[6] M. Balkanski, R. Wallis, E. Haro, Anharmonic effects in lightscattering due to optical phonons in silicon, Phys. Rev. B 28 (4)(1983) 1928–1934.

[7] R. Tsu, J. G. Hernandez, Temperature dependence of silicon ra-man lines, Appl. Phys. Lett. 41 (11) (1982) 1016–1018.

[8] D. B. Zhang, T. Sun, R. M. Wentzcovitch, Phonon quasiparti-cles and anharmonic free energy in complex systems, Phys. Rev.Lett. 112 (5) (2014) 1–5.

[9] T. Sun, X. Shen, P. B. Allen, Phonon quasiparticles and anhar-monic perturbation theory tested by molecular dynamics on amodel system, Phys. Rev. B - Condens. Matter Mater. Phys.82 (22) (2010) 1–10.

8

[10] C. Lee, D. Vanderbilt, K. Laasonen, R. Car, M. Parrinello, Abinitio studies on the structural and dynamical properties of ice,Phys. Rev. B 47 (9) (1993) 4863–4872.

[11] G. Kresse, J. Furthmuller, Efficient iterative schemes for ab ini-tio total-energy calculations using a plane-wave basis set, Phys.Rev. B 54 (1996) 11169–11186.

[12] G. Kresse, D. Joubert, From ultrasoft pseudopotentials to theprojector augmented-wave method, Phys. Rev. B 59 (1999)1758–1775.

[13] S. Plimpton, Fast parallel algorithms for short-range MolecularDynamics, J. Comput. Phys. 117 (1) (1995) 1–19.

[14] A. Togo, F. Oba, I. Tanaka, First-principles calculations of theferroelastic transition between rutile-type and CaCl2-type SiO2at high pressures, Phys. rev. B 78 (2008) 134106.

[15] P. B. Allen, Anharmonic phonon quasiparticle theory of zero-point and thermal shifts in insulators: Heat capacity, bulk mod-ulus, and thermal expansion, Phys. Rev. B - Condens. MatterMater. Phys. 92 (6) (2015) 1–11.

[16] H. J. Monkhorst, J. D. Pack, Special points for brillouin-zoneintegrations, Phys. Rev. B 13 (1976) 5188–5192.

[17] J. P. Perdew, A. Ruzsinszky, G. I. Csonka, O. A. Vydrov, G. E.Scuseria, L. A. Constantin, X. Zhou, K. Burke, Restoring thedensity-gradient expansion for exchange in solids and surfaces,Phys. Rev. Lett. 100 (2008) 136406.

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[19] M. Cardona, T. Ruf, Phonon self-energies in semiconductors:Anharmonic and isotopic contributions, Solid State Commun.117 (3) (2001) 201–212.

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9

(a) First-principles

Γ point (800 K)

G qs(ω)

20151050Frequency [THz]

Γ1

Γ2

(b) Empirical potential

Γ point (800 K)

G qs(ω)

20151050Frequency [THz]

Γ1

Γ2

X point (800 K)

G qs(ω)

20151050Frequency [THz]

X1

X2

X3

X point (800 K)

G qs(ω)

20151050Frequency [THz]

X1

X2

X3

L point (800 K)

G qs(ω)

20151050Frequency [THz]

L1

L2

L3

L4

L point (800 K)

G qs(ω)

20151050Frequency [THz]

L1

L2

L3

L4

Fig. 5. Wave-vector-projected power spectra Gq(ω) (grey curve) and phonon-mode-projected power spectra Gqs(ω) (black curve) of silicon at Γ,X and L. These power spectra have been calculated using the FT method from MD simulations at 800 K computed employing (a) first-principlesand (b) the Tersoff empirical potential approaches. Phonon modes are numbered from the lowest to highest phonon frequency.

10

(a) First-principles

Γ Point

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

TA LA LO TO

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K}

TA LOA TO

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

LTO

X Point

L Point

(b) Empirical potential

Γ Point

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

TA LA LO TO

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K}

TA LOA TO

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

LTO

X Point

L Point

Fig. 6. Intrinsic lattice anharmonicity contribution to the frequencyshift of silicon as a function of temperature. These results have beencalculated using (a) first-principles and (b) the Tersoff empiricalpotential approaches. The FT method was used to calculate thefrequency shifts depicted as open circles. Dashed lines are guides tothe eye.

(a) First-principles

-0.6

-0.4

-0.2

0.0

0.2

Δωqs

[TH

z]E

140012001000800600400Temperature [K}

TA LA LO TO

-0.6

-0.4

-0.2

0.0

0.2

Δωqs

[TH

z]E

140012001000800600400Temperature [K}

TA LOA TO

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

Δωqs

[TH

z]E

140012001000800600400Temperature [K}

LTO

Γ Point

X Point

L Point

(b) Empirical potential

-0.6

-0.4

-0.2

0.0

0.2

Δωqs

[TH

z]E

140012001000800600400Temperature [K}

TA LOA TO

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

Δωqs

[TH

z]E

140012001000800600400Temperature [K]

LTO

-0.6

-0.4

-0.2

0.0

0.2

Δωqs

[TH

z]E

140012001000800600400Temperature [K]

TA LA LO TO

X Point

L Point

Γ Point

Fig. 7. Thermal expansion contribution to the frequency shifts ofsilicon calculated using (a) first-principles and (b) the Tersoff

empirical potential approaches. MD simulations were computedusing the supercell of 64 atoms. Open circles depict the calculations.Dashed lines are guides to the eye.

11

(a) First-principles

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

TA LA LO TO Experimental TA Experimental TO

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K}

TA LOA TO Experimental TA Experimental TO

-1.8

-1.2

-0.6

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

(b) Empirical potential

X Point

L Point

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

TA LA LO TO Experimental TA Experimental TO

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K}

TA LOA TO Experimental TA Experimental TO

-1.8

-1.2

-0.6

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

Fig. 8. (a) Total phonon frequency shifts including both of theintrinsic lattice anharmonicity and thermal expansion contributionsof silicon obtained using (a) first-principles and (b) the Tersoff

empirical potential approaches. MD simulations were computedusing the supercell of 64 atoms. Open circles depict the calculationsand solid dots are the Raman experimental data from Ref. [6] and (Γpoint) and Ref. [7] (X and L points). Dashed lines are guides to theeye.

(a) 64 atoms

X Point

L Point

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

TA LA LO TO Experimental TA Experimental TO

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K}

TA LOA TO Experimental TA Experimental TO

-1.8

-1.2

-0.6

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

(b) 512 atoms

X Point

L Point

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

TA LA LO TO Experimental TA Experimental TO

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]140012001000800600400

Temperature [K}

TA LOA TO Experimental TA Experimental TO

-1.8

-1.2

-0.6

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

Fig. 9. (a) Total phonon frequency shifts of silicon obtained from theMD simulations using the Tersoff empirical potential and thesupercell of (a) 64 atoms and (b) 512 atoms. Open circles depict thecalculations and solid dots are the Raman experimental data fromRef. [6] and (Γ point) and Ref. [7] (X and L points). Dashed lines areguides to the eye.

12

(a) First-principles

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LA LO TO

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LOA TO

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

(b) Empirical potential

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LA LO TO

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LOA TO

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

Fig. 10. Linewidths of silicon as a function of temperature obtainedfrom MD simulations using (a) first-principles and (b) the Tersoff

empirical potential approaches. MD simulations were computedusing the supercell of 64 atoms and the FT method was employed tocalculate the power spectra. Open circles depict the calculations andsolid dots are the Raman experimental data obtained from Ref. [6] (Γpoint) and Ref. [7] (X and L points). Dashed lines are guides to theeye.

(a) 64 atoms

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LA LO TO

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LOA TO

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

(b) 512 atoms

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LA LO TO

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LOA TO

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

Fig. 11. Phonon linewidths of silicon as a function of temperature.Linewidths have been obtained from MD simulations computed withthe Tersoff empirical potential using the supercell of (a) 64 atoms and(b) 512 atoms. Open circles depict the calculations and solid dots arethe Raman experimental data obtained from Ref. [6] (Γ point) andRef. [7] (X and L points). Dashed lines are guides to the eye

13

Appendix A. The discrete Fourier transform

In the MD calculations the velocity is obtained at aconstant time interval ∆. We use the discrete Fouriertransform (FT) to compute the power spectrum from thediscretized data. The discrete FT is defined for a finitenumber of samples hn as

H j ≡

Ns−1∑n=0

hneiωn/Ns , (A.1)

where Ns is the number of samples. In this definition,the inverse discrete Fourier transform that recovers hn

from H j is

hn =1

2πNs

Ns−1∑j=0

H je−iωn/Ns . (A.2)

The Fourier transform H(ω j) is estimated from the dis-crete FT as

H(ω j) =

∫ ∞

−∞

h(t)eiω jtdt ≈Ns−1∑n=0

hneiω jtn∆ = ∆H j, (A.3)

wheretn ≡ n∆. (A.4)

H(ω j) is obtained at discrete frequencies ω j given by

ω j =2π jNs∆

, j = −Ns

2, ...,

Ns

2. (A.5)

The extreme values of j in Eq. (A.5) correspond to thelower and upper limits at which the discrete FT is de-fined. The corresponding frequency at these limits isknown as the Nyquist frequency ωN that is

ωN =π

∆. (A.6)

The power spectrum computed from the discrete FT isobtained at the same resolution and defined within thesame frequency range than the discrete FT. Therefore,the resolution at which the power spectrum is obtainedis given by eq. (A.5) and corresponds to

ωR =2π

Ns∆. (A.7)

In contrast to ωN, ωR depends on the number of samplesNs. At constant ∆, increasing Ns improves the resolutionof H(ω j).

To make the best use of the MD data, we carefullychose the value of ωN and ωR to obtain power spec-tra defined within the frequency range that we are inter-ested in, and with enough resolution to resolve the peaks

that correspond to the quasiparticle phonon modes. Inthis study we set ωR to 0.05 THz, which is smaller thanthe width of the peaks that we want to measure and ωNis determined by the time step used to compute the MDsimulations. According to Eq. (A.7), the number ofsamples N′s needed to calculate the power spectrum withthis resolution is

N′s =2π

0.05∆. (A.8)

Because the number of time steps calculated from MDsimulations is larger than N′s , we divide the full trajec-tory in small segments of length N′s . Then we calcu-late the power spectrum of each segment and averagethem to obtain the final power spectrum. By this pro-cedure we improve the precision of the measurement ofthe power spectrum from the MD data.

We use the fast Fourier transform (FFT) algorithm tocalculate the discrete FT. This algorithm allow us to re-duce the computation time significantly compared withthe direct method shown in Eq. (7). There exists severalimplementations of this algorithm. In DynaPhoPy weuse numpy[20] and FFTW[21] implementations.

Appendix B. The maximum entropy method

An alternative approach to estimate the power spec-trum is the maximum entropy (ME) method[22]. Thismethod allow us to obtain a smoother power spectrumestimation with lower computational cost than using thediscrete FT. However, according to our tests, it requiresa larger number of samples than the discrete FT to ob-tain a good estimation. In this section we summarize thealgorithm employed in our code.

In the ME method we assume that the atoms trajec-tory follows an autoregressive model. Using this model,the power spectrum is calculated as

P(ω) =〈x2〉∆∣∣∣∣∣∣1 − m∑

j=1a jeiω∆ j

∣∣∣∣∣∣2, (B.1)

where {a j} form a set of m coefficients that defines themodel, 〈x2〉 is the mean square discrepancy betweenthe model and the data and ∆ is the sampling interval.The number of coefficients is an input parameter in thismethod and it has to be carefully chosen. These coef-ficients are calculated from a linear prediction that is amathematical operation where the subsequent values hn

are predicted by a linear function of the previous onesusing a set of coefficients a j. The linear predictor is de-fined as

14

hn =

k∑j=1

a jhn− j + fk,n, (B.2)

where fk,n is the discrepancy between the original dataand the prediction. This is called the forward linear pre-diction. This operation can also be done in the oppositedirection, predicting the former values as a function ofthe following ones obtaining the backward prediction:

hn−k =

k∑j=1

c jhn− j+1 + bk,n, (B.3)

where bk,n is the discrepancy in the backward linear pre-diction and c j are the backward prediction coefficients.These coefficients are related to a j by

c j = ak− j+1. (B.4)

The aim of the ME method is to obtain the best setof coefficients that minimizes the total discrepancy. Toarchive this we used the Burg’s method[22], where thesum of the forwards and backward discrepancy is mini-mized using the Levinson-Durbin algorithm[23]. In thisalgorithm the coefficients a j are determined through arecursive procedure in which the coefficients are relatedeach other by parameters µk that are optimized at eachiteration. The parameters µk are known as reflection co-efficients and are obtained by

µk =2bT

k fk

fTk fk + bT

k bk. (B.5)

fk and bk are known as the discrepancy vectors and aredefined as

fk =

fk,2

fk,3

fk,4...

fk,N

bk =

bk,1

bk,2

bk,3

...

bk,N−1

, (B.6)

wheref0,n = b0,n = hn. (B.7)

The Burg’s method algorithm proceeds as follows:

1. Initializationa0 ← 2bT

0 f0/(fT0 f0 + bT

0 b0)k ← 1

2. Calculation of the reflection coefficient

µk ← 2bTk fk/(fT

k fk + bTk bk)

3. Update of coefficients a j

a j+1 ← 0for j← 0, k − 1 do

a j ← a j + µkak−1− j

4. Increment of kif k ≤ m then

k ← k + 1Back to step 2

5. Finish

As can be observed, at each iteration k a new set of co-efficients a j is calculated until k = m is reached. Finally,the mean square discrepancy is calculated from the re-flection coefficients µk as

〈x2〉 =1N s

Ns−1∑n=0

h2n −

m∑k=1

µk. (B.8)

Appendix C. Supercell size effect on first-principlesMD calculations

We have also analyzed the effect of the supercellsize on the quasiparticle phonon properties using first-principles calculations by calculating MD simulationsusing the supercell of 512 atoms. Unfortunately due tothe high computational demand of these calculations weare not able to show results obtained with the same pre-cision as the ones presented in the main text. For thisreason, especially in the case of the linewidths, these re-sults should be taken with caution and be used as qual-itative references. In Fig. C.12 we show the frequencyshifts and linewidths of Si calculated from MD usingthe supercell of 512 atoms. The power spectrum wascalculated using the FT method employing 30000 timesteps. In this figure we observe similar results for thefrequency shifts than the ones obtained using the 64atoms supercell. Consequently, the total shifts com-puted including the thermal expansion contribution arealso in agreement with the experiments as can be ob-served in Fig. C.12c. This allow us to conclude that,as observed in the analysis shown in Sec. 6.2 using theTersoff empirical potential, the supercell of 64 atoms issufficient to compute the frequency shifts of Si.

For linewidths, however, we observe that in the resultat Γ point obtained using the supercell of 512 atoms, al-though shows the same tendency with the temperature,is slightly overestimated with respect to the experiment.At the other analyzed high symmetry points, X and L,we observe also small differences with respect to thecalculations using the supercell of 64 atoms but with

15

(a) Frequency shift

Γ Point

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

TA LA LO TO

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K}

TA LOA TO

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]A

140012001000800600400Temperature [K]

LTO

X Point

L Point

(b) Total shift

X Point

L Point

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K]

TA LA LO TO Experimental TA Experimental TO

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

Δωqs

[TH

z]

140012001000800600400Temperature [K}

TA LOA TO Experimental TA Experimental TO

-1.8

-1.2

-0.6

0.0

Δωqs

[TH

z]140012001000800600400

Temperature [K]

LTO Experimental

Γ Point

(c) Linewidth

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LA LO TO

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

TA LOA TO

1.0

0.8

0.6

0.4

0.2

0.0

Line

wid

th [

THz]

140012001000800600400Temperature [K]

LTO Experimental

Γ Point

X Point

L Point

Fig. C.12. Intrinsic lattice anharmonicity contribution to the frequency shifts (a), total frequency shifts (b) and linewidths (c) of silicon at Γ, X andL points obtained from MD simulations computed using first-principles approach and the supercell of 512 atoms. The FT method was used toextract the quasiparticle phonon properties. Dashed lines are guides to the eye.

similar tendencies with the temperature. It is interestingto notice, however, that the linewidths obtained usingthe supercell of 512 atoms show a more linear tendencywith the temperature than the ones obtained using thesupercell of 64 atoms. This behavior is in agreementwith the general linear tendency that linewidths usuallypresent with the temperature in experiments. This sug-gest that the curvature that the phonon linewidths showin Fig. 10, especially at high temperatures, may be aneffect of to the limited supercell size. This effect canalso be observed in the linewidth at Γ point obtained us-ing the Tersoff empirical potential approach shown inFig. 11.

16