DSA: HOW FAR HAVE WE COME AND HOW MUCH FURTHER IS LEFT … · • Brewer Science and Arkema France Corp. formed a partnership in October 2015 to accelerate the introduction of DSA

Critical Materials Council Conference, Dallas TX12 May 2017 | © 2017 Brewer Science, Inc. 1© 2017 Brewer Science, Inc.

DSA: HOW FAR HAVE WE COME AND HOW MUCH FURTHER IS LEFT TO GO?Darron Jurajda, Brewer Science, Inc.

Critical Materials Council Conference, Dallas TX

12 May 2017

Critical Materials Council Conference, Dallas TX12 May 2017 | © 2017 Brewer Science, Inc. 2

• Background of DSA at Brewer Science• DSA Lithography• Historical Perspective• Hype Cycle• Process Family Tree• Challenges• Progress• Material Control• What’s Next for DSA?• Conclusion

O U T L IN E


• DSA lithography research at Brewer Science began in 2010 as an extension of our lithography material knowledge

• Brewer Science and Arkema France Corp. formed a partnership in October 2015 to accelerate the introduction of DSA material technology for next-generation lithography applications

• In February 2016, Brewer Science and Arkema demonstrated pilot-scale production of DSA materials to support industry process development efforts

• In 2017, Brewer Science and Arkema will expand their partnership with development of high-chi DSA materials and commercialization of PS-b-PMMA DSA materials

DSA AT B R EWER S CI EN CE


DSA lithography is a paradigm shift:• DSA is a complimentary lithography

technique and will exist along with EUV and iArF.

• The pattern is in the material. The composition defines the pattern, the molecular weight defines the pitch.

• The benefits are cost reduction and increased throughput for sub-20-nm feature sizes.

• The pattern orientation is driven by the interface properties.

D S A L I T H O G R A P H Y: P I TC H I N A B OT T L E

A balanced surface energy allows the pattern to orient vertically.


D S A L I T H O G R A P H Y: A “ S I M P L E ” P R O C E S S

Edwards, Stokovich, Markus Müller, Solak, de Pablo, Nealey, J. Polym. Sci B 43, 3444 (2005)

10000 MCS

PS-rich regions (red)

PS-PMMA interface (green)

Ordering kinetics: SCMF simulations

DSA lithography requires:

1. Controlling the surface energy (affine vs neutral zones)

2. Bringing energy to the BCP blends to get to the equilibrium state.


T EC H N O LO G Y A D O P T I O N T I M E L I N E – D S A V S . E U V

*Kinoshita, H. et al “Study on X-ray Reduction Projection Lithography”, 28p-ZF-15, Extended Abstracts (The 47th Autumn Meeting, 1986) ; The Japan Society of Applied Physics** Kim, S. O. et al. “Epitaxial self-assembly of block copolymers on lithographically defined nanopatterned substrates”, Nature 424, 411–414 (2003)

1985-89 1995-99 2005-09 2015-19

1990-94 2000-04 2010-14

First EUV Demonstration*

DSA added to ITRS

EUV added to NTRS First DSA litho demonstration**


Expe

ctat

ions

Innovation Trigger

Peak of Inflated Expectations

Trough of Disillusionment

Slope of Enlightenment

Plateau of Productivity

Where does DSA fit on the hype cycle?

“We tend to overestimate the effect of a technology in the short run, and underestimate the effect in the long run.” - Amara’s Law

GART N ER HY P E CYCL E


0

50

100

150

20019

9319

9419

9519

9619

9719

9819

9920

0020

0120

0220

0320

0420

0520

0620

0720

0820

0920

1020

1120

1220

1320

1420

1520

1620

17

Num

ber o

f SPI

E Pa

pers

EUV Papers DSA Papers

S P I E PAP ER CO U N T HY P E CU RV E

iArF added to ITRS

F2 dropped from ITRS

We are past “Peak of Inflated Expectations”Now the real work begins


DSA

Grapho-EpitaxyContact Hole Shrink

Pitch Multiplication – L/S or CH

Chemo-Epitaxy

Contact Hole Multiplication

Contact Hole Repair

IBM Process – Polymer Brush Guiding

High-χcylinders

CHiPs flow for CH – xPMMA Guiding

Merck SMARTTM Flow

LiNe Flow for L/S – XPS Guiding

EIDEC COOL Flow

Tone-Inverted Grapho-Epitaxy Res. enhancement (TIGeR).

Trench-Assisted Chemoepitaxy= TRAC flow

Chemoepitaxy Etch Trim using a self-Aligned Hard mask (CHEETAH)

Leti Planarization Approach

D S A FA M I LY T R E E


2 0 1 6 D S A SY M P O S I U M S U RV E Y

0 5 10 15

Other

Other metrology

High Chi Material…

DSA integration

DSA material quality…

Defectivity

IDM & Suppliers

Both contact shrink/repair and line/space patterning are considered the first implementation opportunities for DSA.Defectivity is the number one concern (defectivity bar + 3D metrology), followed by pattern fidelity (inspection) and material quality control.

(90 answers from IDM, Suppliers, Academics involved in DSA)


W H AT C H A L L E N G E S R E M A I N ?• As for any patterning solutions, CDU, LWR, LER, placement error,

and defectivity are the key metrics.• Specifications vary depending on the applications. Resolution

Defectivity

Throughput

PatternplacementLWR

Inspection

MaskInfrastructure

DSAEUV

Source: 2015 ITRS

Application Metrics Target (N7)

Contacts CD 20 nm

CDU


• Even if EUV is implemented at N7, it will run into cost issues at N5 due to multi-patterning• DSA can bring a reduction in wafer costs from multi-patterning

Huynh-Bao, et. al., SPIE 2016

Pitch EUV-all EUV-less

Nanowire 18 nm eSADP + eLE Cut iSAQP + iLE2 Cut

Gate 32 nm eSADP + eLE Cut iSAQP + iLEX Cut

M0A 32 nm eLE2 iLE4

M0G 32 nm eLE iLE2

V0 40 c2c, 32-24 nm eLE2 2xiSAQP + iLE3 Cut

M1-H/Mint 24 nm eSADP + eLE2 Cut iSAQP + iLE4 Cut


M2-V 32 nm eSADP + eLE Cut iSAQP + iLE4 Cut


M3-H 24 nm eSADP + eLE Cut iSAQP + iLE4 Cut

W H AT C H A L L E N G E S R E M A I N ?Patterning Options for N5


Min DSA Line/Space CD reported at SPIE Min DSA Contact Hole CD reported at SPIE

DSA R ES O LU T ION P RO GR ES S

• Lithography dimensions are approaching the region where DSA will be useful• Contact hole is the likely insertion point• Industry continues to make steady progress in line/space CD

MPU Metal ½ Pitch MPU CH ½ Pitch


L/S LER reported at SPIE Contact hole CDU reported at SPIE

DSA L ER / LWR AN D CD U N I FO RM ITY P RO GR ES S

• Line-space patterning is not quite there yet, but contact hole is reaching CDU levels needed for production

• High-chi DSA platforms will improve this metric


• Goal is 0.01 cm-2

• Serious defectivity work has only been performed for the last 5 years

• Process monitoring data first reported starting in 2012

Percent of SPIE DSA papers that contain defectivity studies

D S A D E F EC T I V E Y P R O G R E S S


Defectivity Industry Milestones• 2008 – 0.01% or 106 cm-2

• 2012 – >10,000 cm-2

• 2013 – Process monitor data first reported, 979 cm-2

• 2014 – ~200 cm-2 (LiNe flow), 270 cm-2 (LETI contacts)

• 2015 – 24 cm-2 (LiNe flow golden performance)• 2016 – ~0 cm-2 (LETI, hole open yield, 0.01 mm2

inspection area)• Two more orders of magnitude needed to hit

industry target of 0.01 defects cm-20.01

0.11

10100

100010000

1000001000000

Defe

ct D

ensit

y co

unts

(cm

-2)

Best Reported Defect Density

D S A D E F EC T I V I T Y P R O G R E S S

Tada, et. al., Macromolecules, 41, 9267-9276, (2008) Benchera, et. al, SPIE 2012Caoa, et. al, SPIE 2013

Gronheid, et. al, SPIE 2014Argoud , et. al, SPIE 2014Pathangi, , et. al, SPIE 2015


D S A I N S P EC T I O N P R O G R E S S

Key challenges• CD-SEM remains the inspection method

of choice, but suffers from slow throughput, poor resolution with polymers, and lack of 3D information

• Improve resolution of inspection tools for polymer systems

• Define 3D inspection methodology (key for integration, need to allow rework)

TEL SPIE 2016

Courtesy of CEA-Leti


DSA I N S P EC TI ON P RO GR ES S

The azimuthal asymmetry in the DUVSE measured spectra can be used to rapidly assess DSA quality across the wafer, without

requiring a device model

Metrology for rapid characterization of DSA film quality prior to any polymer etch is possible, but further work is required. Other techniques will be used such as CDSEM+SE, GISAX within

Hybrid Technology Concept (see ITRS 2015)

C. Sarma et al. SPIE 2014

Hybrid Technology Concept applied to DSA monitoring

ITRS 2015

Scatterometry 3D inspection


A.Gharbi et al. Proc of SPIE 2014, 9049-58

Sokudo DUOIn-track automated processHardmask guiding patterns

Cdguiding [30:70 nm], 5 nm stepUsing DSA planarization

MaterialsPS-b-PMMA

L0 = 35 nm, cylindricalDifferent template affinities

MetrologyStatistical measurements

On 300-mm wafers70 chips/wafer

Monitoring CDU, PE, HOY


L ET I 3 0 0 -m m DSA P I LOT L I N E: F RO M L AB TO FAB


DSA PAT T ERN P L ACEM EN T AN D HO L E O P EN Y I EL D

• Leti Planarization Approach• Products

– Neutral layer: NL6 – Block copolymers: C35 PoR

PS

PMMA

Guiding pattern(193i litho)

Guiding pattern(SOC/Si-HM etching)

Surface preparation

Litho

Etch-back & PMMA removalBCP overfill

Self-assembly annealing

Gharbi , et. al., SPIE 2016

Mean CD (nm) 17.6

CDU-3σ (nm) 2.8

PE-3σ (nm) 1.4

HOY (%) 100

Top-down SEMimage

X-section SEMimage



DSA PAT T ERN P L ACEM EN T AN D HO L E O P EN Y I EL D

Consistent placement error (PE) and hole open yield (HOY) week to week

Source: LETI



L0~25 nm L0~43 nm

• BCP blends improve organization kinetics and reduce defect level• BCP blends allow for faster fine tuning of process development and even custom BCP periods

using the same polymer batches for consistency• L0 control is less than 1 nm with blending

Courtesy of Arkema

D E F EC T I M P R OV E M E N T S : B C P B L E N D I N G

Quality and flexibility improvements with BCP blends


Polymer monitoring

Fingerprint monitoring:

Monitored parameters:• PS molecular weight by size exclusion

chromatography (SEC)• PS-b-PMMA composition by 1H nuclear

magnetic resonance (NMR)• PS-b-PMMA dispersity by SEC• HomoPS weight. % by liquid adsorption

chromatography (LAC)• Metal contamination by ICP-/mass

spectrometry

Monitored parameters:• Film thickness by ellipsometry• CD and CDU by CDSEM + image treatment• Defectivity (grain boundary, end lines,

connections) by CDSEM + image treatment

CDSEM pictures and software coutesy of LETI

PS Polymer

PMMA Polymer

Mix/Reaction

HomopolymerTreatment

Solvents

Metal Decon

Final Formulation

Mw PSComposition% homopolymer % hPS Dispersity Metals

DSA M AT ER I AL CO N T RO L


DSA M AT ER I AL CO N T RO L

High reproducibility of BREWER SCIENCE/ARKEMA DSA material across multiple batches over 100 weeks from CEA-leti pilot line

3σ


D S A M AT E R I A L C O N T R O L

• Semicontinuous process allows production of batches of polymers of various size• (>>100 kg polymer >>5000 L of BCP coating material)

Due to the stability of the polymers, it is possible to build and store large batches for use with an entire node

MMA Living PS

Micro Mixer Reactor

DSA Polymer

100 kg of polymer could supply one layer at 150K wspm for 4 years

Courtesy of Arkema

C1C2


D S A M AT E R I A L C O N T R O L

•Packaging, shipping and handling control• Bottle requirements are the same as resist or underlayer:

Aicello®, glass, or NOWPak® bottles• DSA materials rely on physical properties and not a chemical

change to work, therefore shipping conditions are similar to stable resists, BARCs, or underlayers.

• Example shipping temperature range: 5 to 30°C. During transportation, the following excursions may be tolerated: -20 to 5°C (10 days), 30 to 40°C (10 days)

• Temperature recorder (preferable an electronic data logger) are recommended

Existing resist packaging and shipping controls can be used for DSA materials

https://www.google.com/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&ved=0ahUKEwjj3-6nxeDTAhVolVQKHUqmD4UQjRwIBw&url=http://www.cleancontainers.com/cbbottles.htm&psig=AFQjCNEIenJROc3PuLvZdoy-5Ar6wFGtxg&ust=1494341301907359


High-χ Materials• The Floury χ parameter is a measure of the polymer blocks’ tendency to separate into

two phases • First generation “low-χ” PS-b-PMMA BCPs are limited to features sizes L0>22 nm• “High-χ” block copolymers (e.g. PS-b-PDMS, PS-b-PHOST, PS-b-P2VP, etc.) show

promise in improved feature resolution (less than 15 nm), LER/LWR, and defectivity

W H AT I S N E X T F O R D S A?

PS-b-PMMA PS-b-PDMS PS-b-P2VP


• The latest developments in high-χ BCPs are modified PS-b-PMMA platforms that improve the L0 to < 15 nm while retaining the ease of processing of first-generation materials (no top coat, no solvent anneal).

• These materials show benefit of smaller resolution or improved kinetics at larger features sizes.

W H AT I S N E X T F O R D S A? H I G H -Χ M AT E R I A L S

Disorder–No Image

200 nm

High-χLow-χ

L 0 =

12

nmL 0

= 2

8 nm

Improved long range ordering

200 nm

200 nm


• DSA has moved beyond the initial excitement of a new discovery

• First-generation materials have reached a maturity level compatible with the first application (Contact- DRAM)

• Defectivity and inspection are still the main challenges, but the industry is making steady progress each year

• High-χ materials development is accelerating and can meet resolution requirements down to N5 and N3

• DSA is on track to be adopted in manufacturing within two years

CO N CLU S I ONS

Acknowledgements:

Darron JurajdaDouglas GuerreroKui XuBrewer Science

Ian CayrefourcqChristophe NavarroXavier ChevalierArkema

Raluca Tironcea-leti

DSA: How far have we come and how much further is left to go?OutlineDSA at Brewer ScienceDSA Lithography: Pitch in a BottleDSA Lithography: A “Simple” processTechnology Adoption Timeline – DSA vs. EUVGartner Hype CycleSPIE Paper Count Hype CurveDSA Family Tree2016 DSA symposium surveyWhat Challenges Remain?What Challenges Remain?DSA Resolution Progress�DSA LER/LWR and CD Uniformity Progress�DSA Defectivey Progress�DSA Defectivity ProgressDSA Inspection ProgressDSA Inspection ProgressLeti 300-mm DSA Pilot Line: from LAB to FABDSA Pattern Placement and Hole Open YieldDSA Pattern Placement and Hole Open YieldDefect Improvements: BCP BlendingDSA Material ControlDSA Material ControlDSA Material ControlDSA Material ControlWhat is next for DSA?What is next for DSA? High-χ MaterialsConclusions

Documents

DSA: HOW FAR HAVE WE COME AND HOW MUCH FURTHER IS LEFT … · • Brewer Science and Arkema France Corp. formed a partnership in October 2015 to accelerate the introduction of DSA