Notification about the transfer of the semiconductor business

The semiconductor business of Panasonic Corporation was transferred on September 1, 2020 to Nuvoton Technology Corporation (hereinafter referred to as "Nuvoton"). Accordingly, Panasonic Semiconductor Solutions Co., Ltd. became under the umbrella of the Nuvoton Group, with the new name of Nuvoton Technology Corporation Japan (hereinafter referred to as "NTCJ").

In accordance with this transfer, semiconductor products will be handled as NTCJ-made products after September 1, 2020. However, such products will be continuously sold through Panasonic Corporation.

Publisher of this Document is NTCJ.If you would find description “Panasonic” or “Panasonic semiconductor solutions”, please replace it with NTCJ.

※ Except below description page “Request for your special attention and precautions in using the technical information and semiconductors described in this book”

Nuvoton Technology Corporation Japan

Product Standards

MOS FET

FC8V36060L

Absolute Maximum Ratings Ta = 25 C

Drain-Source Voltage

Gate-source Voltage

Drain Current (DC) *1

Drain Current (Pulsed) *1,*2

Total Power Dissipation *1 (Steady State)

Channel Temperature

Storage Temperature Range

Note *1 Device mounted on a glass-epoxy board coated Copper ( see Fig . 1 )

*2 Ensure that the channel temperature does not exceed 150℃

Page

Equivalent circuit, Pin name

Code ―

4. Gate 8. Drain

1. Source 5. Drain

3. Source 7. Drain

6. Drain

Unit: mm

VDS 60

9

A

A

V

PD 1.3 W

C

VGS 20 V

ID 3

Tch C

IDp

-55

Unit

Embossed type (Thermo-compression sealing) : 3

JEITAParameter

000 pcs / reel (standard)

Panasonic

Symbol Rating

Packaging

Marking Symbol: M2

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

FC8V36060LDual N-channel MOS FET

For lithium-ion secondary battery protection circuits

For load switching

Features

Low drain-source ON resistance:RDS(on) typ. = 70 mW（VGS = 4.5 V)

Halogen-free / RoHS compliant

of 6

WMini8-F1

SC-115

1

2. Gate

150

Tstg to +150

(Fig .1) Glass-Epoxy Board coated Copper FR-4 25.4×25.4×0.8 （ Unit ； mm ）

2.8

2.9

(0.81)

2.4

0.3 0.16

0.65

1 2 3 4

5678

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Product Standards

MOS FET

FC8V36060L

Electrical Characteristics Ta = 25 C 3 C

Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring

methods for transistors.

*1 Assured by design

*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

Page

ns ID = 3.0 A

1.2

6 ID = 3.0 A

1.4

V

VDD = 30 V, VGS = 10 to 0 Vns

VDD = 30 V

VGS = 0 to 10 V,

ID = 3.0 A

nC

1.2

0.8

V

mW

ID = 480 mA, VDS = 10 V 1.0

ID = 1.5 A, VGS = 4.5 V - 70

pF

mA

50

60 85RDS(on)1 ID = 1.5 A, VGS = 10 VDrain-source On-state Resistance

38

Crss

Coss VDS = 10 V, VGS = 0 V, f = 1 MHz

7

td(off)

Gate-source Charge *1 Qgs

Total Gate Charge *1 Qg

Gate-source Threshold Voltage Vth

Body Diode Forward Voltage VSD

Gate-drain Charge *1 Qgd

3.0

10

IF = 1.5 A, VGS = 0 V

7.0

Turn-on delay Time *1,*2 td(on) 9 VDD = 30 V, VGS = 0 to 10 V

Output Capacitance *1

Reverse Transfer Capacitance *1 20

Fall Time *1,*2 tf

Rise Time *1,*2 tr

Turn-off delay Time *1,*2

2 of

V

mA

6

100

Drain-source Breakdown Voltage VDSS

360

-

RDS(on)2

Input Capacitance *1 Ciss

VGS = 16 V, VDS = 0 VIGSSGate-source Leakage Current

Zero Gate Voltage Source Current IDSS VDS = 60 V, VGS = 0 V

Parameter Symbol Conditions Min Typ Max

10

Unit ID = 1 mA, VGS = 0 V 60

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Product Standards

MOS FET

FC8V36060L

*2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time

Page 3 of 6

10 %

90 %

90 %

10 %

90 %

10 %

Vin

Vout

td(on) tr td(off) tf

VDD = 30 V

Vout

Vin

ID = 3.0 A Vin

0 V

10 V PW = 10 μs

D.C. ≦ 1 % D

S

G

50 Ω

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Product Standards

MOS FET

FC8V36060L

Technical Data ( reference )

Page

ID - VDS RDS(on) - ID

4 of 6

ID - VGS RDS(on) - VGS

IF - VF Capacitance - VDS

0

5

10

0.0 0.5 1.0

VGS = 10 V

4.5 V

3.5 V

3.0 V Dra

in C

urr

en

t ID

(A

)

Drain-source Voltage VDS (V)

Dra

in-s

ou

rce

ON

-sta

te R

esis

tan

ce

R

DS

(on

) (m

Ω)

Drain Current ID (A)

0

50

100

150

200

0 5 10

10 V

VGS = 4.5 V

Dra

in C

urr

en

t ID

(A

)

Gate-source Voltage VGS (V)

1.E-06

1.E-04

1.E-02

1.E+00

0 1 2 3 4 5

Ta = 125 ºC

85 ºC

25 ºC

-30 ºC

Dra

in-s

ou

rce

ON

-sta

te R

esis

tan

ce

R

DS

(on

) (m

Ω)

Gate-source Voltage VGS (V)

0

40

80

120

160

200

0 5 10 15

Ta = 125 ºC

85 ºC

25 ºC

-30 ºC

ID = 1.5 A

Dio

de F

orw

ard

Curr

ent

IF (

A)

Diode Forward Voltage VF (V)

1.E-07

1.E-05

1.E-03

1.E-01

1.E+01

0.0 0.5 1.0 1.5

Ta = 125 ºC

85 ºC

25 ºC

-30 ºC

Drain-source voltage VDS (V)

Capacitance

C (

pF

)

10

100

1000

0 5 10 15 20

Ciss

Coss

Crss

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Product Standards

MOS FET

FC8V36060L

Technical Data ( reference )

Page

Rth - tsw Safe Operating Area

5 of 6

Vth - Ta RDS(on) - Ta

Dynamic Input/Output Characteristics

Temperature Ta (ºC)

Ga

te-s

ou

rce

Th

resh

old

Vo

lta

ge

V

th (

V)

Gate Charge Qg (nC)

Ga

te-S

ou

rce

Vo

lta

ge

V

GS

(V

)

Pulse Width (s)

Th

erm

al R

esis

tan

ce

Rth

(ºC

/W)

Drain-source Voltage VDS (V)

Dra

in C

urr

en

t ID

(A

) D

rain

-so

urc

e O

N-s

tate

Resis

tan

ce

R

DS

(on

) (m

Ω)

Temperature Ta (ºC)

0.1

1

10

100

1000

0.001 0.01 0.1 1 10 100 1000

0.001

0.01

0.1

1

10

100

0.1 1 10 100

IDP = 9 A

Operation in this area is limited by RDS(on) (4.5 V)

Ta = 25 ºC,

Mounted on FR4 board (25.4×25.4×t0.8

mm) coated with copper foil,

DC

100 ms

10 ms

1 ms

1 s

40

90

140

-50 0 50 100 150

VGS = 4.5 V

10 V

ID = 1.5 A

1

2

3

-50 0 50 100 150

ID = 480 mA

0

4

8

12

0 2 4 6 8

ID = 3.0 A VDS = 30 V

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Product Standards

MOS FET

FC8V36060L

Unit: mm

Page

WMini8-F1

6

6 of

Land Pattern (Reference) (Unit: mm)

0.16+0.10-0.05

2.9±0.1

0.65

2.8±

0.1

0 to 0.02

(0.2)

0.80

±0.05

0.30+0.10-0.05

2.4±

0.1

(0.15)

1 2 3 4

5678

(5°)

(5°)

0.65 0.65 0.65

0.4

0.65

2.4

Doc No. TT4-EA-14952 Revision. 3

Established : 2014-03-12 Revised : 2016-09-02

Request for your special attention and precautionsin using the technical information and semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, thelaws and regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuitexamples of the products. No license is granted in and to any intellectual property right or other right owned byPanasonic Corporation, Nuvoton Technology Corporation Japan or any other company. Therefore, no responsibility isassumed by our company as to the infringement upon any such right owned by any other company which may arise as aresult of the use of technical information de-scribed in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment,communications equipment, measuring instruments and household appliances), or for specific applications as expresslystated in this book.Please consult with our sales staff in advance for information on the following applications, moreover please exchangedocuments separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) inwhich exceptional quality and reliability are required, or if the failure or malfunction of the products may directlyjeopardize life or harm the human body.Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be heldresponsible for any damage incurred as a result of or in connection with your using the products described in this bookfor any special application.

(4) The products and product specifications described in this book are subject to change without notice for modificationand/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operatingconditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceedthe range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break downand failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We donot guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsedtime since first opening the packages.

(7) When reselling products described in this book to other companies without our permission and receiving any claim ofrequest from the resale destination, please understand that customers will bear the burden.

(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of ourcompany.

No.070920