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 VISHAY BY228/13 / BY228/15

Document Number 86004

Rev. 1.6, 11-Aug-04

Vishay Semiconductors

www.vishay.com

1

949588

Standard Avalanche Sinterglass Diode

Features  Glass passivated junction

 • Hermetically sealed package

Applications

High voltage rectification

Efficiency diode in horizontal deflection circuits

Mechanical Data

Case: SOD-64 Sintered glass case

Terminals: Plated axial leads, solderable perMIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: approx. 858 mg

Parts Table

Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified

Maximum Thermal ResistanceTamb = 25 °C, unless otherwise specified

Part Type differentiation Package

BY228-13 VR = 1000 V; IFAV = 3 A SOD-64

BY228-15 VR = 1200 V; IFAV = 3 A SOD-64

Parameter Test condition Part Symbol Value Unit

Peak reverse voltage, non

repetitive

IR = 100 µA BY228/13 VRSM 1300 V

BY228/15 VRSM 1500 V

Reverse voltage see electrical characteristics BY228/13 VR 1000 V

BY228/15 VR 1200 V

Peak forward surge current tp = 10 ms, half sinewave IFSM 50 A

Average forward current IFAV 3 A

Junction temperature T j 140 °C

Storage temperature range Tstg - 55 to + 175 °C

Non repetitive reverse

avalanche energy

I(BR)R = 0.4 A ER 10 mJ

Parameter Test condition Symbol Value Unit

Junction ambient on PC board with spacing

25 mm

RthJA 70 K/W

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Document Number 86004

Rev. 1.6, 11-Aug-04

 VISHAY BY228/13 / BY228/15Vishay Semiconductors

Electrical CharacteristicsTamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition Part Symbol Min Typ. Max Unit

Forward voltage IF = 5 A VF 1.5 V

Reverse current VR = 1000 V BY228-13 IR 2 5   µAVR = 1200 V BY228-15 IR 2 5   µA

VR = 1000 V, T j = 140 °C BY228-13 IR 140   µA

VR = 1200 V, T j = 140 °C BY228/15 IR 140   µA

Total reverse recovery time IF = 1 A, - diF /dt = 0.05 A/ µs trr 20   µs

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0,25 A trr 2   µs

Figure 1. Typ. Thermal Resistance vs. Lead Length

Figure 2. Forward Current vs. Forward Voltage

94 9081

l l

TL0

10

20

30

40

    R

  -    T    h   e   r   m .

    R   e   s    i   s    t .    J   u   n   c    t    i   o   n    /    A   m

    b    i   e   n    t    (    K    /    W    )

0 5

l - Lead Length ( mm )

15 3020    t    h    J    A

10 25

      I

   -      F    o    r    w    a    r      d      C    u    r    r    e    n     t      (      A      )

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VF - Forward Voltage ( V )16402

      F

T j  = 25°C

T j   =150 °C

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Figure 4. Reverse Current vs. Junction Temperature

16403

RthJA = 25 K/Wl = 10 mm

RthJA = 70 K/W

PCB: d = 25 mm

VR  = VRRMhalf sinewave

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 755025 125100 150

Tamb- Ambient Temperature ( °C )

      I

   -      A    v    e    r    a    g    e      F    o    r    w    a    r      d      C    u    r    r    e    n     t

      (      A

      )

      F      A

1

10

100

1000

25 50 75 100 125 150

T j  - Junction T emperature (°C )16404

VR = VRRM

      I

   -      R     e    v     e     r     s     e      C    u     r     r     e     n      t      (     µ      A

      )

      R

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 VISHAY BY228/13 / BY228/15

Document Number 86004

Rev. 1.6, 11-Aug-04

Vishay Semiconductors

www.vishay.com

3

Package Dimensions in mm (Inches)

Figure 5. Max. Reverse Power Dissipation vs. Junction

Temperature

16405

0

50

100

150

200

250

300

350

25 50 75 100 125 150

T j  - Junction Temperature ( °C )

VR RM= V

    P

  -    R   e   v   e   r   s   e    P   o   w   e   r    D    i   s   s    i   p   a    t

    i   o   n    (   m    W

    )

    R

PR-Limit@100 % V

PR -Limit@80 % V

R

R

Figure 6. Diode Capacitance vs. Reverse Voltage

0

10

20

30

40

50

60

70

0.1 1 10 100

VR – Reverse Voltage ( V )16406

      C

   –      D      i    o      d    e      C    a    p    a    c      i     t    a    n

    c    e      (    p      F

      )

      D

f =1 MHz

Cathode Identification   4.3 (0.168) max.

1.35 (0.053) max.

4.0 (0.156) max.

Sintered Glass CaseSOD-64

94 958726(1.014) min. 26 (1.014) min.

ISO Method E

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Document Number 86004

Rev. 1.6, 11-Aug-04

 VISHAY BY228/13 / BY228/15Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, aswell as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate theuse of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for eachcustomer application by the customer. Should the buyer use Vishay Semiconductors products for anyunintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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