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Devin K. Brown, Georgia Tech
1
Anti-Charging Methods
• when electron beam lithography must be performed on insulating substrates (e.g. Quartz, SiC, soda lime, etc.) negative charge buildup can occur on the substrate surface causing beam deflection, and thus pattern distortion
ma-N 2403
glass substrate
electron beam
electron beam
negative charge accumulation
Initial Condition Future Condition
repulsive electric potential lines
Devin K. Brown, Georgia Tech
2
Au on top of resist
• Au can be coated on top of resist to dissipate charge– typically 100A is sufficient
• Au must be deposited with Filament Evaporation– Electron beam evaporation will expose resist
• Au must be stripped with Potassium Iodine prior to resist development– has worked well with ZEP520A on glass– has not worked well with ma-N 2403 on glass (see next slide)
Au
ma-N 2403
glass substrate
front side Au
e-beam exposure
Devin K. Brown, Georgia Tech
3
Au incompatible with ma-N 2403
• Au on top of ma-N 2403 on glass substrates has not worked well
Devin K. Brown, Georgia Tech
4
Ti/Au/Ti
ma-N 2403
glass substrate
Ti/Au/Ti under resist layer
e-beam exposure
Ti/Au/Ti under resist layer• Ti/Au/Ti can be coated underneath resist to dissipate charge
– typically 20/30/20A is sufficient• can use Electron beam evaporation since deposition occurs prior to resist
coating• Ti/Au/Ti must remain after resist development, may not be compatible with
process• Ti can help with resist adhesion issues to quartz
Devin K. Brown, Georgia Tech
5
• ESpacer is spin coatable, no evaporation required• ESpacer is water soluble
– compatible with ma-N 2403
• Ebeam exposure must occur shortly after ESpacer application
ESpacer
ma-N 2403
glass substrate
front side ESpacer
e-beam exposure
ESpacer
Devin K. Brown, Georgia Tech
6
GOOD(no charging)
BAD (severe charging)
Ti/Au/Ti under resist
BAD(moderate charging)
no anti-charging layerESpacer > 24 hours
Charging causes pattern distortion
ESpacer < 1 hourfront side Au
Devin K. Brown, Georgia Tech
7
GOOD(no charging)
BAD(severe charging)
Ti/Au/Ti under resist
BAD(moderate charging)
no anti-charging layerESpacer > 24 hours
500umfield
boundary
fieldstitcherror
alsopattern
distortion
Charging causes pattern distortion & field stitch error
ESpacer < 1 hourfront side Au