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Device characterization anD moDeling
• UTMOSTIIIsupportsthecharacterizationandmodelextractionforMOS,BJT,Diode,JFET,GaAs,SOIandTFTdevices
• UTMOSTIIIprovidesthewidestselectionofmeasurementequipmentfromavarietyofvendors
• Fullyinteractive,semi-automatedorbatch-modeoperationissupported
• Real-timemodeltuningusingtherubberbandfeature
• IntegratedwithSilvacoTCADSoftwareandSPAYNstatisticsprogramforsmoothdevelopmentofpre-siliconmodels
• SupportsallleadingSPICEsimulators
• Silvaco’sstrongencryptionisavailabletoprotectvaluablecustomerandthirdpartyintellectualproperty
UTMOST III generates accurate, high quality SPICE models for analog, mixed-signal and RF applications. UTMOST III is in use worldwide by leading IDMs, foundries and fabless companies to perform data acquisition, device characterization, model parameter extraction and model verification.
• Flexiblemeasurementandanalysisenvironmentfordevicecharacterizationandmodel generation
• Supportswidestselectionofinstrumentdrivers,proberdrivers,devicemodels,operating platforms, and commercial circuit simulators
• Splitsdevicecharacterizationand/ormodelingproblemsintoseparatemeasurement and analysis tasks
• Storesmeasuredresultsinmeasurementlogfilesforfutureanalysis(search,averaging) so that valuable probe time is minimized
• Commondatasetscanbeusedtoextractmorethanonemodeltype
• Supportssingletestorstep-and-repeatoperation
• Extractsparametersbyusingcomprehensivelibraryofbuilt-inextractionalgorithms, flexible user-defined local optimization strategies, more interactive global optimization procedures, or a combination of all three
• Storesextractedparametersinmultipleformats,includingSPICElibraryformatsthatcan be read back into UTMOST III as an initial estimate during future model extractions
TestandAnalysisEnvironment
UTMOST III addresses the practical needs of device characterization and modeling engineers with a flexible, productive workflow
UTMOST III acquires measured or TCAD simulated data, extracts parameters, and delivers accurate, high quality SPICE models.
• DrivesmostcommonlyusedDCanalyzers,ACanalyzers,capacitancemeters,switching matrix controllers, pulse generators, and oscilloscopes
• Controlsmostcommercialautomaticandsemi-automaticprobers
• Drivesmanytemperatureovensandhotchucks
• Fullyinteractive,semi-automatic,orbatch-modeoperation
• Step-and-repeatoperation,includingwafercassettecontrol
• ComprehensiveselectionofDC,AC,transient,andcapacitancetestroutinesforMOSFET, BJT, Diode, JFET, GaAs, SOI, TFT, and HBT modules
• Performsallrequiredmeasurementsonpackageddevicesoronwafer
• InterfacestoprocessanddevicesimulatorsandtotheSPAYNStatisticalParameter Analysis tool
• Supportsthewidestvarietyofmodelsandcircuitsimulators
DataAcquisition
UTMOST III provides intuitive and comprehensive menus to select and drive all of the required instruments for device data acquisition.
UTMOSTIIIsupportsthewidestselectionofinstruments
DCAnalyzers B1500AHP4141 HP4142 HP4145 HP4155/56 Keithley236 Keithley 237 Keithley 238 Keithley 4200 Keithley S450 Tektronics370/370ATektronics371/371A
ACAnalyzersHP3577 HP8505 HP8510A,B,C HP8720A,B,C,D,EHP8722D HP8751 HP8753A,B,C,D,E HP8754 Wiltron360
ProbersAlessi 4500Alessi 5500Cascade Summit Electroglas 1034Electroglas 2001ElectronKarlSuss(PE100/PA200II) RK680 RK681RK 1032TKS 3000 TKS 4000 TKS 5000 TKS6000Tokyo Wentworth MP-1100
ScannersB2200/B2201HP3488 HP3495 HP3852AHP4084 HP4085 HP4086 Keithley 705 Keithley706 Keithley 707 Keithley 7002 RACAL 1251
CapacitanceMetersB1500A-B1520AHP4262HP4271HP4284HP4285HP4192HP4194 HP4274 HP4275,HP4276,HP4277HP4279 HP4280HP4294AE4980A Keithley 590 Keithley 595
• IncludescomprehensivesetofDCextractionroutinesforprocess-monitoranddevice model parameters
• Flexiblelocaloptimizationproceduresforanysupportedmodelassubstituteorsupplement to built-in routines
• Supportsbipolarroutinestoextractresistances,breakdown,saturation,leakage, forward and reverse gain, early voltage, knee current, bipolar junction capacitance, and basic Gummel-Poon parameters from DC measured characteristics
• ProvidesACextractionroutinesforcutofffrequency,forwardandreversetransittime, base resistance, and excess phase parameters
• ExtractsDCMOSFETparametersincludinglengthreduction,widthreduction,threshold voltage, low-field mobility, body effect, velocity saturation, resistance, breakdown, and subthreshold slope parameters
• Supportstheextractionofoverlapandjunctioncapacitanceparameters
ParameterExtraction
UTMOST III extracts MOSFET parameters, including BSIM4.
• SOImodulepermitscharacterizationofalltransistorproperties,including4/5terminals device, bipolar parasitic effects, and Body or BackGate currents
• Measureds-parameterscanbeconvertedtoh,z,andy-parameters
• Supportsstandard,calibrationandtwostepde-embeddingproceduresforcorrectmeasurement of s-parameters
• IncludesspecialextractionalgorithmsfortheextractionofBSIM1,BSIM2,BSIM3,BSIM4, MOS9 and MOS11 parameters, for single or multiple geometries
• Universalmulti-target/multi-geometrymeasurementroutineforSOIandMOStechnology
• GatecurrentmeasurementandparameterextractionroutineforBSIM4,MOS11
AdvancedParameterExtraction
UTMOST III extractsparametersforBipolar(above),Diode,JFET, GaAs, SOI, TFT, HBT, and passive devices for RF.
• Offersflexiblelocaloptimizationfacilityandglobalparameteroptimizationboundary boxes
• Optimizemultipledevicegeometriessimultaneously(upto36devices)andmixdevice currents and conductances as optimization targets
• Rubberbandinteractiveparameterextractionenablesmodelingengineerstoobserve the effects of parameter variations on device characteristics
• Supportssingleormulti-geometryoptimizationwithgraphicalupdatingofsimulated characteristics
• Supportsmulti-stepoptimizationallinreal-time
• Supportsgraphicalparametersensitivityandquality-of-fitinformation
ParameterOptimization
UTMOST III supports Levenberg-Marquadt andDownhill Simplex optimization methods.
OptimizedMOSmodel(left),Rubberbanduserinterface(middle),andOptimalBipolarmodelresults(right).
• Supportswidestselectionofcommerciallyavailabledevicemodels
• GeneratesmodelsforSmartSpice,HSPICE,SpectreandELDO
• Offersfastbuilt-inSPICEsimulationlibrary(ModelLibstaticallylinked:cannotbenefitfromflexibility as UTMOST IV)
• ExternalSPICEmodeallowsyoutoconnecttoanySPICEsimulator
• Supportstheconversionofmodelparametersetsfromonemodeltoanother
• Macromodelingandparameterextractionisavailablefordeviceswhichcannotbeadequately modeled by any existing device models
• User-definedmodelslinkeddynamically
• SupportforSmartSpiceinterpretermodels
• FastsimulationusingModelLibModelandFastinternalsolver
ModelGeneration
BSIM4 Multigeometry extraction.
FTvsIC for Bipolar RF device.
s-parameterfor RF
Bipolar device.
MacroModeling capability.
Berkeley Level 1 Berkeley Level 2 Berkeley Level 3 BSIM1 BSIM2 BSIM3 BSIM4 BSIMMGBSIM5PSP Level 1000
Bipolarmodels
Gummel-Poon Quasi RC IGBT QBBJT MEXTRAM HBT HICUM MEXTRAM504 User modelsMextram 503VBIC95Philips Modella
TFTmodels
Amorphous TFT Polysilicon TFT RPI a-Si RPI p-SiUser models
SOI modelHoneywell FLORIDA FD FLORIDANFD BSIM3SOI FD BSIM3SOI DD BSIM3SOI PD STAG SOI CEA/LETI User models
MESFET model JFET Statz Curtice 1 Curtice 2 User modelsTriQuintTriQuint 3Parker-Skellen
SupportedSPICEModels
Philips Level 9 EKV LDMOS Level 20 Philips Level 11 User modelsHV MOS Level 88 HiSIMPhilips 30Philips 31
MOSFETmodels
• Operatesinmanual,semi-automatic,automatic,andbatchmodeoperation
• IncludestechnologymodulesforMOS,Bipolar,Diode,JFET,GaAs,SOI,TFT,andHBT
• AutomaticallyconvertsTCADdevicecharacteristicsfromTCADprocessanddevice simulations
• PerformsdetailedparameterextractionsonTCADdatainbatchmodetodevelopnominal and worst-case models for a process under development
• StoresmodelparametersanddevicecharacteristicsinSPAYNformatforstatisticalparametric analysis and worst-case model definitions
UTMOSTIIIOperation
Batch-mode operation. Mobility histogram.
Scatter plot of drain length.Statistical slew of MOS.
• LeaderinsupplyingaccurateSPICEmodelsfromwafersorpackagedparts
• Aggressiveinprovidingcosteffectivemodelswithrapidturnaround
• ModelextractionprovidedforMOS,Bipolar,Diode,JFET,GaAs,SOI,TFT,HBT
• ExtractionofDC,AC(s-parameters),capacitance,temperature,noise,SPICEparameters
• Temperaturerangefrom-55degreesCto+150degreesC
• AllcommerciallyavailableSPICEmodelssupported
• ModelvalidationinaccordancewithGlobalSemiconductorAlliance(GSA),Compact Modeling Council, and IEEE test procedure #P1485 recommendations
• Worst-caseandcornermodelgeneration
SpiceModelingServices
UtmoSt iii
SPice model parameters
UtmoSt iii inputs/outputs
SPice SimulatorSmartSpice, hSPice, Spectre, elDo, PSPice
tcaD simulated data
measurement equipment interface
Plots and data simulated vsmeasured data
measured data(Dc, caP, rF, etc.)
SPaYn
heaDqUarterS
4701 Patrick henry Drive, Bldg. 2
Santa clara, ca 95054 USa
Phone: 408-654-4309
Fax: 408-496-6080
JaPan [email protected]
eUroPe [email protected]
Korea [email protected]
taiwan [email protected]
SingaPore [email protected]
caliFornia [email protected]
408-567-1000
maSSachUSettS [email protected]
978-323-7901
texaS [email protected]
512-418-2929
arizona [email protected]
480-947-2900
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