DEVELOPMENT STATUS OF GANIL ION SOURCE: GISELE

CERN, 20th February 2013

Jose Luis Henareshenares@ganil.fr

1st Topical Workshop on Laser Based Particle Sources

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

INDEX

♦ SPIRAL2 FACILITY

♦ RILIS AT SPIRAL2

♦ TEST BENCH SOURCE FOR SPIRAL2: GISELE GISELE LASER SETUP

LISBET TEST ION SOURCE

♦ DEVELOPMENTS LOW WORK FUNCTION MATERIALS

TIME PROFILE MEASUREMENTS

IONIZATION SCHEMES

♦ SUMMARY & OUTLOOK

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

SPIRAL2 FACILITY

Phase 1

LINAC: 33MeV p 40 MeV d 14.5 A MeV HI

Phase 2

RIB Production CaveUp to 1014 fiss./sec.

CIME cyclotron RIB at 1-20

AMeV (up to 9 AMeV for FF)

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

ISOL: Isotope Separation On Line

RIBs: Short T1/2, Rare, All but Pure Fast, Efficient, Universal & Selective!

Production

238UC2H

Q/A

Separation

kV

Ionization

X+

ExperimentCharge BreedingX+ Xn+

Post acceleration

SPIRAL2 FACILITY

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

SPIRAL2 FACILITY

FEBIAD ECR

A = 78

AtExcitedstates

Ionization Potential

E1Ener

gy

0 eV E0

Ion +

E2

EIP

♦ Surface Ion Source

♦ Plasma Ion Source

♦ Resonant Ionization Laser Ion Source (RILIS)♦ Resonant Ionization Laser Ion Source (RILIS)

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

HOT CAVITY SOURCE

CHARACTERISTICS:

~ 0.1%

100%

surf

RILIS AT SPIRAL2

Ion source ExtractorTarget

60 kV

Towards mass separator

+ ion ~10%, up to 40%+ Ionization process is chemically selective- Contamination by surface ions

Typical residence time: 10µsLaser system frequency: 10kHzDoppler broadening @ 2500K: ~5 GHz

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL 7

RILIS AT SPIRAL2

ECR

RILIS: 60% of the Letters of Intent for SPIRAL2 Phase 21er requested beams: Sn, Zn, Ga, Y, In

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

SCHEME:

TEST BENCH SOURCE: GISELE

Mass spectrometer

Window

nx 3

nx 2

Pump laserNd:YAG

75 W, 10 kHz

-

Ti:Sa 3

Ti:Sa 2

Ti:Sa 1

Ion Source

kV

Laser system

Extractionelectrode

Oven

SampleTube

Dipole

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

TEST BENCH SOURCE: GISELE

Laser setup

Laser beam transport, Separator & Ion Source

Dipole

Ion Source

Zn+

Ion Beam

Ti:Sa Lasers

Pump Laser

SHG/THG/FHG

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

GISELE LASER SETUP

3 TUNABLE TI:SA CAVITIES680 < < 1000nmMax power ~ 5W (40ns, 10kHz)Spectral bandwidth ~ 6 GHzTRIUMF Collaboration (Vancouver, Canada)

2 FREQ. CONVERSION CAVITIESSHG: 350 < < 470nm (~1W)THG/FHG: 210 < < 330nm (~200mW)Mainz University Collaboration (Germany)

LASER PUMPNd:YAG 532nm120ns, 5-20kHz, 75W @ 10kHzPhotonics Industry

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

GISELE LASER SETUP

Zn+ Beam & Ga Beam

10000 cm-1

30000 cm-1

50000 cm-1

70000 cm-1

90000 cm-1

Zn

?

3d104s2 1S

3d104s4p 1P°

213nmOn going:New ionization scheme for ZnTest of 2 & 3 step Sn scheme

June 2012

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

ON LINE RILIS AT SPIRAL2

Production module

UCx Tarjet

Extration electrode

Laser beams

Ionization tube

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

LISBET: Laser Ion Source Body using Efficient Techniques

LASER ION SOURCE TEST FOR SPIRAL2

Reservoir

Ionization tube

Transfertube

Zn & Sn ionization efficiencyElbow shape source

New ceramic ionization tubeElectric field to reduce “impurities”

Extraction electrodeShielding

+

+- -

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

LOW WORK FUNCTION STUDY

REDUCTION OF CONTAMINANTS

Low work function materials Reduce surface ionization of isobars & molecular sidebands

POSSIBLITIES:♦ Metallic ♦ Carbides♦ Borides♦ Impregnations

New low work function materials: CarbidesZrC, TaC, HfC, TiC (Tm ~3500ºC)

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

TIME PROFILE MEASUREMENTS

MEASUREMENT SETUP

Liu, Nuclear Instruments and Methods in Physics Research B 269 (2011) 2771–2780

TNT2 Card

Lettry, Review of Scientific Instruments. Vol 69, Number 2. February 1998.

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

♦ New SPIRAL2 have been presented.

♦ Test bench source is in development: GISELE & LISBET.

♦ Low work function materials will be studied.

♦ Time domain profile of the beam will be measured.

♦ New ionization schemes will be developed.

SUMMARY & OUTLOOK

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

Thank you!

CERN, 20th February 2013. Development Status of Resonant Ion Source at GANIL

SPIRAL2 FACILITY (GANIL)

SPIRAL2 Phase 2Fission products

SHE In-flight S3

In-flight S3

SPIRAL1 New RIB !

ISOL & in-flight RIB from transfer and deep inelastic Reactions

N=Z: SPIRAL2S3 & Phase 2

2012: > 3500 over 8000 nuclei have been observed