Develop (K0.5Na0.5)NbO3 Lead-Free Ferroelectric Thin Films by the RF Sputtering Technique

Hsiu-Hsien Su

CONTENTSIntroduction

Experimental procedures

Results and discussion

Conclusion1

INTRODUCTION

Target by the solid-state method.

By the use RF magnetron sputtering.

Thin films are deposited on the ITO substrates.

2

EXPERIMENTAL PROCEDURES

3

K2O3, Na2CO3, Nb2O5K2O3, Na2CO3, Nb2O5

Mixing and Ball Mill (12h)Mixing and Ball Mill (12h)

Dried, ground, and calcined (865 /24h)℃Dried, ground, and calcined (865 /24h)℃

Sintering (1140 /3h) in the air℃Sintering (1140 /3h) in the air℃

(K0.5Na0.5)NbO3 Target(K0.5Na0.5)NbO3 Target

EXPERIMENTAL PROCEDURES

4

Sputtering (K0.5Na0.5)NbO3 on the ITO Substrate Sputtering (K0.5Na0.5)NbO3 on the ITO Substrate

XRD/FE-SEM/AFMXRD/FE-SEM/AFM

Al ElectrodeAl Electrode

MeasuredMeasured

Measured system

5

RESULTS AND DISCUSSION

6

No annealing 400 C annealing

500 C annealing 600 C annealing 7

SEM

No annealing

400 C annealing

500 C annealing

600 C annealing

AFM microstructure8

Roughness: 14.11 nm Roughness: 4.01 nm

Roughness: 3.627 nm Roughness: 7.762 nm

Applied voltage (V)

0 5 10 15 20

Lea

kag

e cu

rren

t d

ensi

ty (

A/c

m2 )

10-13

10-12

10-11

10-10

10-9

10-8

10-7

10-6

10-5

10-4

As-deposited400oC500oC600oC

Leakage current density9

CONCLUSIONThe main effect of the annealing temperature is

grain growth

Higher annealing temperature will cause to

Abnormal grain growth

Pores increasing

Leakage current increasing10

CONCLUSION 400 °C annealing reveals

1. The best roughness

2. The best grain growth

3. The best leakage current density

11

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