Designing a Three Phase Inverter for a Permanent Magnet

Helsinki Metropolia University of Applied Sciences

Bachelor of Science

Electronics

Thesis

June 19, 2013

Lars Dautermann

Designing a Three Phase Inverter for aPermanent Magnet Synchronous Motor

Abstract

Author Lars DautermannTitle Designing a Three Phase Inverter

for a Permanent Magnet Synchronous Motor

Number of Pages 51 pages + 7 appendicesDate June 19, 2013

Degree Bachelor of Science

Degree Programme European Electrical Engineering

Specialisation option Power electronics

Instructor Arja Ristola, Technology Manager

The motivation for this thesis is to provide a three phase inverter for an electric carin the Formula Student. Designing a inverter is a challenge that requires combinedknowledge in microcontroller programming, pcb layout, electric analysis and theprincipals of how to control a motor.The theory of electrical motors and especially permanent magnet synchronousmotors is shortly introduced. The physical and electrical characteristics werestudied to understand how the motor can be controlled with a three phase inverter.The schematics, the design of drivers and safety features for the switching elementsin the inverter are shown.The software to control the inverter and to communicate with other devices in a carto obtain the information about the desired torque and power is explained.A model of a space vector control in Matlab is simulated.The advantages and disadvantages of different control methods like direct torquecontrol and field oriented control are discussed.

During the study of the thesis two inverter designs were designed. A low voltage, lowpower version to study the concept and a high voltage, high power version for thepractical usage in the car. Due to the limitation of time only the low voltage inverteris built and demonstrated.

Keywords inverter, permanent magnet synchronous motor, mosfet, igbt

Contents

Nomenclature 1

1 Introduction 31.1 Formula Student . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.2 Metropolia Motorsport . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Car System Overview 4

3 Theory 53.1 History of Synchronous Motors . . . . . . . . . . . . . . . . . . . . 53.2 Permanent Magnet Motor . . . . . . . . . . . . . . . . . . . . . . . 6

3.2.1 Physical Types of Permant Magnet Motors . . . . . . . . . . 73.2.2 Parameters of PMSM . . . . . . . . . . . . . . . . . . . . . 103.2.3 Dynamic Model of IPMSM - Flux Linkage . . . . . . . . . . 113.2.4 Dynamic Model of IPMSM - Stationary and Synchronous

Frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123.2.5 Torque Control . . . . . . . . . . . . . . . . . . . . . . . . . 14

3.3 Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153.3.1 Square Wave Conversion . . . . . . . . . . . . . . . . . . . 153.3.2 Modified Sine Wave Conversion . . . . . . . . . . . . . . . 163.3.3 Pure Sine Wave Conversion . . . . . . . . . . . . . . . . . . 173.3.4 Space Vector PWM . . . . . . . . . . . . . . . . . . . . . . 18

3.4 Control loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203.4.1 Direct Torque Control . . . . . . . . . . . . . . . . . . . . . 203.4.2 Field Orientated Control . . . . . . . . . . . . . . . . . . . . 203.4.3 Clark-Park Transformation . . . . . . . . . . . . . . . . . . . 23

3.5 Switching Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 243.5.1 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243.5.2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

4 Matlab Simulation 27

5 Schematic 285.1 Power Supply Module . . . . . . . . . . . . . . . . . . . . . . . . . 285.2 Microcontroller Modules . . . . . . . . . . . . . . . . . . . . . . . . 295.3 Optocoupler Module . . . . . . . . . . . . . . . . . . . . . . . . . . 305.4 CAN Bus Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . 305.5 Inverter Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315.6 Resolver to Digital Converter Module . . . . . . . . . . . . . . . . . 31

6 Inverter Parts 336.1 Switching Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

6.1.1 MOSFET Driver . . . . . . . . . . . . . . . . . . . . . . . . 346.1.1.1 Bootstrap Driver Calculation . . . . . . . . . . . . 34

6.1.2 IGBT Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . 366.2 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

6.2.1 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . 38

6.2.2 RCD Snubber . . . . . . . . . . . . . . . . . . . . . . . . . . 396.3 Microcontroller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 406.4 Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

6.4.1 Temperature Sensors . . . . . . . . . . . . . . . . . . . . . 406.4.2 Current Sensors . . . . . . . . . . . . . . . . . . . . . . . . 406.4.3 Voltage Sensor . . . . . . . . . . . . . . . . . . . . . . . . . 41

7 Measurements 427.1 Voltage Divider Resistance . . . . . . . . . . . . . . . . . . . . . . 427.2 Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

8 Program 46

9 Summary and Conclusion 47

List of Figures 48

List of Tables 50

Bibliography 51

A Matlab Code 52A.1 Matlab code for square wave generation . . . . . . . . . . . . . . . 52A.2 Matlab code for modified sine wave generation . . . . . . . . . . . 53A.3 Matlab code for pure sine wave generation . . . . . . . . . . . . . 54A.4 Matlab code for space vector PWM . . . . . . . . . . . . . . . . . . 56

1

Nomenclature

λa Flux linkage phase a

λb Flux linkage phase b

λc Flux linkage phase c

λsd, λα Flux linkage in stationary d-axis

λsq, λβ Flux linkage in stationary q-axis

µ0 Permeability of the vacuum

ωr, ωe = P2ωr Rotor speed

ψm Magnetic flux of the permanent magnets

θr, θ = θe = P2θr Rotor flux angle

ea Back EMF phase a

eb Back EMF phase b

ec Back EMF phase c

ia Stationary current phase a

ib Stationary current phase b

ic Stationary current phase c

ied, id D-axis synchronous current

isd, iα D-axis stationary current

ieq, iq Q-axis synchronous current

isq, iβ Q-axis stationary current

kphase Back EMF constant

Ld D-axis synchronous inductance

Lq Q-axis synchronous inductance

Lδ Reluctance inductance component

Labcs Inductance corresponding to the uniform air gap

Lrlc Reluctance matrix

m Space vector sector number

N Number of turns of the d-axis winding

Pe Electric power

2

Te Torque

Ts Switching period

ved, vd D-axis synchronous voltage

vsd, vα D-axis stationary voltage

veq , vq Q-axis synchronous voltage

vsq , vβ Q-axis stationary voltage

Vdc Battery voltage

BLDC Brushless direct current motor

CAN Controller area network

CEMF Counter electromotive eorce

f Frequency

FOC Field oriented control

I2C Inter-integrated circuit

MOSFET Metal oxide semiconductor field effect transistor

P Number of motor poles

PM Permanent magnet

PMSM Permanent magnet synchronous motor

PWM Pulse width modulation

SPI Serial peripheral interface

SVPWM Space vector pulse width modulation

3

1 Introduction

The motivation for this thesis was to provide a three phase inverter for an electriccar in the Formula Student. The Formula Student is an engineering competitionwhere students design and build a car under the rules of the Formula Student.Points can be scored in different engineering and business events throughoutthe competition. Writing this thesis and creating a three phase inverter helps tounderstand the electric car in more detail and gain points in the design event. Aself built and self designed inverter in the car can be better tailored for the desiredpurposes and also helps to assess electromagnetic interference problems betterthat might occur in the car’s communication network.This study is carried out for the Metropolia Motorsport team.

1.1 Formula Student

Figure 1: Formula Student logos

The Formula Student is an engineering com-petition that took place the first time in the USAin 1981. The American competition is the For-mula SAE (Society of Automotive Engineers ).In 2013 there are 11 official competitions inter-nationally: three in the USA, one in Australia,one Brazil, one in Italy, one in the United King-dom, one in Germany, one in Austria, one in Hungary and one in Japan.[6, p. 6][2] The Formula Student in these countries use the same basic set of rules forits competitions which are slightly changed depending on the event. Teams arecreated by students to represent their universities. To the right the logo of theoverall formula student and the logo of the German competition can be seen.

1.2 Metropolia Motorsport

Figure 2: Metropolia Motorsportlogo

The Metropolia Motosport team was formerlyknown as Helsinki Polytechnic Formula Engi-neering Team, which was founded in 2000.The first competition participation was in 2002in Birmingham UK with the car HPF002. In2008 the team changed its name to Metropo-lia Motorsport due to the name change of theuniversity to Helsinki Metropolia University of Applied Sciences. Since then theteam has constructed a car each year and participated in several competitions.

4

In 2013 the team constructed its first fully electric car. In cooperation with ABBthey built their own permanent magnet synchronous motor, which is controlled bya inverter from ABB.[1]In figure 2 the logo of the Metropolia Motorsport team can be seen.

2 Car System Overview

Inverter 1

Inverter 2

Motor 1

Motor 2D

C B

ank

Das

hb

oar

dD

rive

r In

form

atio

n

Ped

als

Torq

ue

Co

ntr

ol

Inp

ut

Controller

Drive Train

Figure 3: System Overview

In figure 3 the top view of the electric car can be seen. The drive train is lo-cated in the rear of the car behind the driver’s seat. At the front of the car thepedals for acceleration and braking can be found.The car has a lot of electrical devices and sensors on board. To control all thosedevices a central control unit is used which runs a self developed software. Thiscontroller is also called main control unit (MCU). The separate electrical systemsin the car communicate by using a CAN bus. The CAN bus was specifically cre-ated to guarantee stable communication in automotive environments. It uses adifferential signal. This helps to prevent coupling of electromagnetic interferences.

For the driver to be able to control the car, the input devices have to be trans-formed into electrical signals. The two front pedals positions are sensed using ahigh precision linear resistor. The steering wheel has an encoder implementedwhich reveals the momentary angle. These signals are evaluated by the main

5

controller. According to the software the acceleration and steering angle infor-mation is calculated into torque and speed demands for the rear wheels. Via theCAN bus this information is send to the inverters in the drive train. The invertersuse the received information to each separately control one motor.Before the car can be set into ready to drive mode a series of safety procedureshave to be executed by the driver.All systems are constantly monitored for failures by software implemented rou-tines as well as hardware implemented safety features.

3 Theory

3.1 History of Synchronous Motors

Synchronous machines were first development during the middle of the 19th cen-tury as single phase generators to supply lighting systems. In the early develop-ment the salient pole rotor motor and the turbo generator formed as the typicaldesign type. Being closely connected with the development of power plants theusage and size of synchronous motors grew with the size of the power plants. Inan industrial manufacturing environment the synchronous motor was used wherea constant speed or usage as a phase shifter was needed.

With the development of frequency inverters the synchronous motor can nowbe used as a speed controlled motor and only recently found its way to new ap-plications ranging from smallest sizes, like watches, phonographs and precisionmechanics up to the biggest sizes and powers used in cement mills, conveyorsand steel mills. [3, p. 289]

The trend is to use high efficiency motors like Permanent Magnet SynchronousMotors (PMSM) in home applications such as refrigerators, air conditioners andwashing machines.A nice side effect is that the efficiency of permanent electric motors can playan important role to reduce greenhouse gases and help reduce the air pollutioncaused by exhausts. The requirement of a clean environment and the reductionof a petroleum dependency has lead to a a paradigm shift. Slowly gasoline en-gines are replaced or at least assisted by electrical machines. In vehicle powertrains more and more vehicles are using hybrid or fully electrical systems. Ongo-ing progress in CPU and power semi conductor performance has made it possibleto easily implement complicated control techniques and algorithms using cost ef-fective components. [4, p. xi]

6

3.2 Permanent Magnet Motor

As seen in Figure 4 AC motors can be divided into asynchronous and synchronousmotors. Like any AC motor asynchronous motors work on the principle of creat-ing a rotating field. [3, p. 170]. Technically asynchronous motors resemble trans-formers. The stator being the primary and the rotor being the secondary side.Asynchronous motors are called asynchronous because the speed of the rotor isless than the speed of the rotating field. This behaviour is called slip.

Synchronous motors use the stator’s and rotor’s magnetic field to lock witheach other in respect to their position leading to a synchronous rotation of therotor with the stator’s magnetic field. The speed of a synchronous motor is n =120∗fP

. If a motor had 4 poles and was supplied with a 50Hz frequency the speedwould be 1500rpm.

Reluctance motors use the effect of attraction experienced when holding amagnet to a magnetisable material like an iron nail. The rotor consisting of amagnetisable material is attracted to the magnetic field created by the stator’scoils.

Permanent magnet motors use the effect of repulsion of equally magnetic po-larized fields experienced when bringing two magnets together with the samepole. The rotor’s magnets are being pushed away by the magnetic field createdin the stator coils.

AC-Motors

Asynchronous Synchronous

Permanent Magnet Motor

BLDC Motor

Surface PM

Motor

Switched Reluctance

Synchronous Reluctance

Reluctance Motor

PMSM

Interior PM

Motor

Squirrel CageInduction Motor

Doubly FedInduction Motor

Figure 4: Taxonomy of AC motors

Permanent magnet motors are classified into two categories based on theshape of their counter clectromotive force (CEMF). According to Faraday’s lawΦB =

∫∫∑

(t)

B(r, t)dA, CEMF is created when a coil rotates in a magnetic field or the

7

other way round a static coil experiences a rotating magnetic field. The changein magnetic flux then induces a voltage according to eb = Kbωr, where Kb is theback EMF constant, and ωr is the rotor angular speed. [4, p. 2]

ea

ea

eb

eb

ec

ec

Time [s]

Vol

tage

[V]

Counter EMF PMSM

(a)

Time [s]

Vol

tage

[V]

Counter EMF BLDC

(b)

Figure 5: (a) Continuous Counter EMF of a PMSM, (b) Trapezoidal Counter EMFof a BLDC

Because the thesis concentrates on a inverter used for a PMSM this type ofpermanent magnet motor will be focused on.

3.2.1 Physical Types of Permant Magnet Motors

In Figure 6 typical PMSM structures are shown. Motors where the PMs are at-tached to the surface of the rotor are called surface PMSM (SPMSM). Motorswhere the PMs are inserted into the rotor are called interior PMSM (IPMSM). Thedifferent arrangement of the permanent magnets leads to different reluctancesand inductances. Because modern PMs have a permeability close to 1 they canbe treated like air regarding the magnetic reluctance. PMs embedded in the rotoralmost always lead to the q-axis synchronous inductance being larger than thed-axis synchronous inductance,

Lq > Ld,

withLd =

µ0N2A

2(g + hm)

andLq =

µ0N2A

2g.

8

Figure 6: Typical PMSM structures: (a) surface magnet, (b) inset magnet, (c) poleshoe rotor, (d) tangentially embedded magnets, (e) radially embedded magnets(flux-concentration), (f) two magnets per pole in the V position, (g) a synchronousreluctance motor equipped with permanent magnets.[8, p. 397]

while PMs on the rotor surface lead to the q-axis synchronous inductancebeing equal to the d-axis synchronous inductance.

Lq = Ld,

withLd = Lq =

µ0N2A

2(g + hm).

With the arrangement in Figure 6(e) a flux concentration can be achieved, forexample an effective flux density of 0,8T using magnets with 0,4T flux density.Though the use of PM mounted on the surface makes better use of the PMs flux,because the magnets in SPMSMs are mounted on the surface the speed rangeand power density is smaller compared to IPMSMs due to the centrifugal forcethat acts upon them and magnet flux leakage, which can even lead to demag-natisation of surface mounted PMs due to the heat created by the losses. [4, p.140],[8]

Figure 7 shows the physical structure of the stator and rotor of the motor fromthe Metropolia Motorsport team. It has 24 slots in the stator and 4 magnetic poleson the rotor. The magnets are tangentially embedded. This design was chosento allow speed up to 6000 rpm and and efficient use of power of 8kW-22kW.

9

Stator

North

North

South South

Rotor

Rotor

Slot

Slot

Slot

Slot

Figure 7: Structure of the Metropolia Motorsport’s motor: interior magnet

10

3.2.2 Parameters of PMSM

Given the physical description of a PMSM the most important parameters to de-scribe the motor mathematically are shown in table 1.

Physical representa-tion

Parameter representa-tion

Dimension

Resistance of the mo-tor’s stator winding

RS Ω

D-axis inductance of onemotor phase. This isa transformed value de-rived by the Park trans-formation.

Ld H

Q-axis inductance ofone motor phase. Thisis a transformed valuederived by the Parktransformation.

Lq H

Back EMF constant. KpV srad

Rotor Pole Pair. P 1

Table 1: PMSM parameter overview

11

3.2.3 Dynamic Model of IPMSM - Flux Linkage

A simplified equivalent circuit of any AC machine can be seen in Figure 8.The inductance can be divided into stator and rotor inductance. The induc-

tance can be described as [4, p. 149]

Labcs = Labcs − Lrlc(θ),

where

Lrlc(θ) = Lδ

cos 2θ cos(2θ − 2π/3) cos(2θ + 2π/3)

cos(2θ − 2π/3) cos(2θ + 2π/3) cos 2θ

cos(2θ + 2π/3) cos 2θ cos(2θ − 2π/3)

,with

Lδ ≡ µ0N2A

2γ2.

Lδ describes the reluctance component.θ is the rotor angle.µ0 is the permeability of the vacuum.A is the air gap area through which the flux crosses.N is the number of turns of the d-axis winding.γ2 is a positive constant describing the air gap.Lrlc is called reluctance matrix and varies along with the rotor angle.

va

L

ia

ea

ebLib

ec

Libvb

vc

Figure 8: Simplified equivalent circuit of a 3 Phase AC motor.

12

Labcs is the inductance corresponding to the uniform air gap described as

Labcs =

Lms + Lls −1/2Lms −1/2Lms

−1/2Lms Lms + Lls −1/2Lms

−1/2Lms −1/2Lms Lms + Lls

,with

Lms ≡ µ0N2A

2γ0.

γ0 and γ2 are positive constants.The total flux linkage isλaλb

λc

= [Labcs − Lrlc(θ)]

iaibic

+ ψm

cos θ

cos(θ − 2π/3

cos(θ + 2π/3

.

Figure 9: Stationary equivalent circuit of a PMSM (one phase)

3.2.4 Dynamic Model of IPMSM - Stationary and Synchronous Frame

The flux linkage in (3.2.3) is transformed into the stationary d,q frame as[λsdλsq

]=

[Ls − 3/2Lδ cos 2θ −3/2Lδ sin 2θ

−3/2Lδ sin 2θ Ls + 3/2Lδ cos 2θ

][isdisq

]+ ψm

[cos θ

sin θ

].

From this the stationary IPMSM dynamic model is obtained through

vsdq = rsisdq +

d

dtλsdq

An overview of the dynamic models of SPMSM and IPMSM can be seen inTable 2.

13

SPMSM in the stationary frame

ddt

[isdisq

]= rs

Ls

[isdisq

]− ψmωe

Ls

[− sin θecos θe

]+ 1

Ls

[vsdvsq

]IPMSM in the stationary frame[

vsdvsq

]= rs

[isdisq

]+

[Ls − 3

2Lδ cos 2θe −3

2Lδ sin 2θe

−32Lδ sin 2θe Ls + 3

2Lδ cos 2θe

]ddt

[isdisq

]−3ωeLδ

[− sin 2θe cos 2θecos 2θe sin 2θe

] [isdisq

]+ ωeψm

[− sin θecos θe

]SPMSM in the synchronous frame

ddt

[iedieq

]=

[ −rsLs

ωe−ωe − rs

Ls

] [iedieq

]− ψωe

Ls

[01

]+ 1

Ls

[vedveq

]IPMSM in the synchronous frame

ddt

[iedieq

]=

[−rsLd

ωeLq

Ld

−ωe Ld

Lq− rsLs

] [iedieq

]− ψωe

Lq

[01

]+

[1Ldved

1Lqveq

]

Table 2: PMSM dynamic equations[4, p. 154]

Ld = Ls −3

2Lδ

Lq = Ls +3

2Lδ

Ls =3

2Lms + Lls

14

3.2.5 Torque Control

Torque in the rotating frame (synchronous) is calculated as:

Te =3P

4

[ψmi

eq − (Lq − Ld)iedieq

].

ψmieq is the electro-magnetic torque based on the Lorentz force, which is build

by the quadrature current.−(Lq − Ld)iedieq is the reluctance torque caused by the Ld − Lq asymmetry.

Using a lossless model where ved = −ωeLqieq and veq = ωeLdied + ωeψm the total

electric power is

Pe =3P

4ωr(ψmi

eq + (Ld − Lq)iedieq

).

From this the torque equation in the stationary frame can be derived as

Te =3P

4(λsdsi

sq − λsqsisd).

where

λsd = Lsisd −

3

2Lδ(−isd cos 2θe + isq sin 2θe) + ψm cos θe,

λsq = Lsisq −

3

2Lδ(i

sd sin 2θe − isq cos 2θe) + ψm sin θe.

15

3.3 Inverter

There are several methods to convert DC to AC. They differ mainly in their approx-imation to a perfect sinusoidal signal. As one would expect the best approximationyields the best transfer of power to a device that expects a sinusoidal signal. Abetter approximation comes with more complexity and cost. A compromise be-tween functionality, cost and complexity has to be made.In this part the advantages and disadvantages of different conversion methodswill be discussed and evaluated.

3.3.1 Square Wave Conversion

The simplest form of DC to AC conversion is a square wave. As shown in figure 10it uses the full DC voltage and switches between this maximum level at 50% dutycycle. This hard switching could be used for a BLDC as this type of motor expectsa DC signal. For a PMSM it is not desirable because it expects a sinusoidalsignal. The advantages of square wave conversion are its simplicity and low costof components. The disadvantages are high amplitude harmonics (Figure 11)and unsmooth behaviour of devices that expect a sinusoidal signal, which leadsto physical stress.

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

−1

−0.5

0

0.5

1

1.5

Time [s]

Vol

tage

[V]

SquareWave

Figure 10: Square wave conversion

The Matlab code to create figure 10 and 11 can be seen in appendix A.1.

16

0 1 2 3 4 5 6 7 8 9 100

0.2

0.4

0.6

0.8

1

Amplitude Spectrum of SquareWave

Frequency [Hz]

|Vol

tage

[V]|

Figure 11: Square wave amplitude spectrum

3.3.2 Modified Sine Wave Conversion

In figure 12 a modified sine wave conversion can be seen. It is an improvementin comparison to the square wave conversion. Instead of just two levels and a 50% duty cycle it uses three levels. The

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

−1

−0.5

0

0.5

1

Time [s]

Vol

tage

[V]

Modified Sinus Wave

Figure 12: Modified sine wave conversion


17

0 1 2 3 4 5 6 7 8 9 100

0.2

0.4

0.6

0.8

1Amplitude Spectrum of Modified Sine Wave

Frequency [Hz]

|Vol

tage

[V]|

Figure 13: Modified sine wave amplitude spectrum

3.3.3 Pure Sine Wave Conversion

In a pure sine wave conversion, the desired sinusoidal signal is compared againsta sawtooth wave. Whenever the desired sinusoidal signal and the desired valueintersects with the sawtooth sampling frequency a new pulse is started until thesawtooth signal reaches the maximum amplitude. A Matlab generated examplecan be seen in figure 14.

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

−1

−0.5

0

0.5

1

Pure Sine Wave PWM switching

Time [s]

|Vol

tage

[V]|

Vdc

Vdc/2

Figure 14: Simulated PWM signal for a pure sine wave

In figure 15 the amplitude spectrum of the pure sine wave PWM signal can beseen. It has components spread across a wide range of frequencies because ofthe changing duty cycles during the modulation.


18

0 10 20 30 40 50 60 70 80 90 1000

0.2

0.4

0.6

0.8

1Amplitude Spectrum of sine wave

Frequency [Hz]

|Vol

tage

[V]|

Figure 15: Simulated PWM signal for a pure sine wave amplitude spectrum

3.3.4 Space Vector PWM

In space vector PWM the different switching states of the inverter are mapped intoa hexagon. The state vectors are placed analog to the abc frame. By doing so thesynchronous voltage vectors can be obtained by their amplitude and angle. Whenthey fall into the designated sector a sequence of vector states is run to synthesizethe desired output voltage. To reduce the computing that has to be done thevalues from the stationary abc frame are transformed into the dq synchronousframe. The voltages ved and veq are calculated in the rotating frame as:

ved = (PI)(ie∗d − ied)− ωLqieq, (3.1)

veq = (PI)(ie∗q − ieq)− ωLdied + ωψm. (3.2)

These values are then transformed back into the stationary α,β frame as seenin figure 16. The maximum rms voltages in space vector PWM that can beachieved are higher than with sinusoidal PWM. This is because of the utilisa-tion of the 3rd harmonic.The maximum rms voltage for sinusoidal PWM is

√3

2·√2· Vdc ≈ 0.612 · Vdc.

The maximum rms voltage for space vector PWM is 1√2· Vdc ≈ 0.707 · Vdc

Because space vector PWM utilizes a higher voltage, more or equal power canbe transferred using less current.

In figure 17 it can be seen how the voltage vector is synthesized. The desiredvoltage vector is Va. The vector V1 and V2 represent the configuration of the upperswitches of the inverter. To create vector Va the switch configuration V1 is switchedon for a proportional time T1 of Va1. Then V2 is switched on for a proportional timeT2 of Va2. The duration of each switch position is calculated from vα and vβ as: [4,p. 278]

19

a

b

c

α

β

(a)

V0(0, 0, 0)

V7(1, 1, 1)

V1(1, 0, 0)

V2(1, 1, 0)V3(0, 1, 0)

V4(0, 1, 1)

V5(0, 0, 1) V6(1, 0, 1)

Sector 1

Sector 2

Sector 3

Sector 4

Sector 5

Sector 6α

β

(b)

Figure 16: Stationary frame of the three phases abc with overlayed stationary α,βframe (a), Space dector diagram (b)

T1 =

√3 · TsVdc

·[sin(

πm

3· vα − cos(

πm

3· vβ]

T2 =

√3 · TsVdc

·[− sin(

π(m− 1)

3· vα − cos(

π(m− 1)

3· vβ].

T0 = Ts − (T1 + T2);

Ts is the the switching period.T0 is the zero vector switching time.m is the number of the sector.Vdc is the battery voltage.

V1(1, 0, 0)

V2(1, 1, 0)

Va

Va1

Va2

Sector 1α

β

Figure 17: Space vector synthesizing

20

3.4 Control loop

To control the speed and torque of a PMSM the frequency and voltage have tobe controlled. Thus the devices to control such a motor are called variable fre-quency drive (VFD). Mainly two different control types are distinguished: scalarcontrol and vector control. Scalar control uses the effect of changing the operat-ing parameters such as voltage and frequency to drive the motor at different setsof characteristic curve families. It is called scalar control because it scales theoperating parameters. [9, p. 671]Vector control dynamically controls the motor’s torque directly by observing themotor’s current and keeping the magnitude of the instantaneous magnetizing cur-rent space vector constant so that the rotor flux linkage remains constant.[9, p.645] It is called vector control because it analysis voltage, current and magneticflux based on their vector representation. Two types of vector control, directtorque control (DTC) and field oriented control (FOC), are discussed in moredetail in the following section.

3.4.1 Direct Torque Control

Direct torque control uses the measurement of voltage and current to calculateand estimate the magnetic flux and torque. It can be divided into direct self-control(DSC) and space vector modulation (SVM).

3.4.2 Field Orientated Control

The overall control loop looks similar to figure 18. The torque is controlled by thequadrature current (iq) of the rotor. The current component id does not need tobe controlled. id is normally used to create the flux of the excitation circuit. In aPMSM this flux is constantly present because of the magnets. id can be used toinduce field weakening.As seen in figure 18 the three phase current are measured with an ADC (analogto digital inverter) of a microcontroller. This information is then transformed fromthe stationary three phase stator frame into the rotating rotor frame. Further thisinformation is subtracted from the desired current. A PI controller regulates howmuch the current has to be increased or decreased. This is then calculated intothe corresponding voltage values. After an inverse park transformation from therotating dq frame into the stationary αβ frame the appropriate switching sequenceis executed.

21

Figure 18: Control loop overview

In a more compact way it can be said that field oriented control is the tech-nique used to achieve the decoupled control of torque and flux by transformingthe stator current quantities (phase currents) from the stationary reference frameto torque and flux producing currents components in the rotating (synchronous)reference frame(Figure 19).[7]

A comparison overview between DTC and FOC can be seen in table 3 [10].

22

Comparison property DTC FOC

Dynamic response totorque

Very fast Fast

Coordinates referenceframe

alpha, beta (stator) d, q (rotor)

Low speed (¡ 5% ofnominal) behavior

Requires speed sensorfor continuous braking

Good with position orspeed sensor

Controlled variables torque & stator flux rotor flux, torque currentiq & rotor flux current idvector components

Steady-state torque/cur-rent/flux ripple & distor-tion

Low (requires high qual-ity current sensors)

Low

Parameter sensitivity,sensorless

Stator resistance d, q inductances, rotorresistance

Parameter sensitivity,closed-loop

d, q inductances, flux(near zero speed only)

d, q inductances, rotorresistance

Rotor position measure-ment

Not required Required (either sensoror estimation)

Current control Not required Required

PWM modulator Not required Required

Coordinate transforma-tions

Not required Required

Switching frequency Varies widely around av-erage frequency

Constant

Switching losses Lower (requires highquality current sensors)

Low

Audible noise spread spectrum siz-zling noise

constant frequencywhistling noise

Control tuning loops speed (PID control) speed (PID control), ro-tor flux control (PI), idand iq current controls(PI)

Complexity/processingrequirements

Lower Higher

Typical control cycletime

10-30 microseconds 100-500 microseconds

Table 3: Comparison between DTC and FOC

23

3.4.3 Clark-Park Transformation

The Clark-Park transformation combines two steps. The Clark transformation andthe Park transformation. With the Clark transformation the stationary 3 phasecurrents ia, ib and ic are transformed into the stationary components iα and iβ. Infigure 19 this first step is visualized.

Permanent Magnet Synchronous Motor

10 Revis ion 0

TransformationsIn FOC, the components Iq and Id are referenced to the rotating reference frame. Hence the measured stator currents have to be transformed from the three phase time variant stator reference frame to the two axis rotating dq rotor reference frame. This can be done in two steps as shown in Figure 1-5.

The transformation from the 3-phase 120 degree reference frame to two axis orthogonal reference frame is known as Clarke transform. Similarly the transformation from two axis orthogonal reference frame to the two axis rotating reference frame is known as Park transform.

Clarke TransformationThe measured motor currents are first translated from the 3-phase reference frame to the two axis orthogonal reference frame. The transform is expressed by the following equations.

Iα = Ia

Iβ = (Ia + 2Ib)/√3

Where Ia+Ib+Ic = 0

Park TransformationThe two axis orthogonal stationary reference frame quantities are then transformed to rotating reference frame quantities. The transform is expressed by the following equations:

Id = Iα cosθ + Iβ sinθ

Iq = Iβ cosθ – Iα sinθ

Inverse Park TransformationNow the outputs of the PI controllers provide the voltage components in the rotating reference frame. Thus an inverse of the previous process has to be applied to get the reference voltage waveforms in stationary reference frame. At first, the quantities in rotating reference frame are transformed to two axis orthogonal stationary reference frame using Inverse Park transformation. The Inverse Park transformation is expressed by the following equations:

Vα = Vd cosθ - Vq sinθ

Vβ = Vq cosθ + Vd sinθ

Figure 1-5 • Forward Transformations

ia

ibic

F

Clarke Transformation Park Transformation

i

i

F id iq

q-a

xis

d-axis

F

Figure 19: Clarke and Park transformation [7, p. 9]

The Clark transformation is mathematically described as:

[iα

iβ

]=

2

3

[1 −1

2−1

2

0√32−√32

]iaibic

In the next step the park transformation is applied. Here the stationary com-

ponents iα and iβ are transformed into the rotating (synchronous) components idand id. In figure 19 this second step is visualized.The Park transformation is mathematically described as:[

id

iq

]=

√2

3

[cos θ sin θ

− sin θ cos θ

][iα

iβ

]

These two steps can be formed into one step known as dq0 transformation:

[id

iq

]=

√2

3

[cos θ cos

(θ − 2π

3

)sin(θ + 2π

3

)− sin θ − sin

(θ − 2π

3

)− sin

(θ + 2π

3

)]iaibic

To regain the stationary three phase components reverse transformations canbe applied. In FOC it is necessary to inverse transform the stationary voltagecomponents vd and vq into the stationary components vα and vβ.[

vα

vβ

]=

[cos θ − sin θ

sinθ cosθ

][vd

vq

]

24

3.5 Switching Devices

3.5.1 MOSFET

Mosfet stands for metal-oxide-semiconductor field-effect transistor. The mosfetnowadays has replaced the bipolar transistor in low power switching applicationsalmost completely. Being a voltage controlled device it is more efficient and faster.

of device structure, geometry, and bias voltages. During turn-

on, capacitors Cgd and Cgs must be charged through the gate,

hence, the design of the gate control circuit must take into

consideration the variation in these capacitances. The largest

variation occurs in the gate-to-drain capacitance as the drain-

to-gate voltage varies. The MOSFET parasitic capacitance is

given in terms of the device data sheet parameters Ciss, Coss,

and Crss as follows:

Cgd ¼ Crss

Cgs ¼ Ciss ÿ Crss

Cds ¼ Coss ÿ Crss

where Crss is the small-signal reverse transfer capacitance; Ciss

is the small-signal input capacitance with the drain and source

terminals shorted; and Coss is the small-signal output capaci-

tance with the gate and source terminals shorted.

The MOSFET capacitances Cgs, Cgd and Cds are nonlinear

and a function of the dc bias voltage. The variations in Coss

and Ciss are significant as the drain-to-source voltage and the

gate-to-source voltage each cross zero. The objective of the

drive circuit is to charge and discharge the gate-to-source and

gate-to-drain parasitic capacitances to turn on and off the

device, respectively.

In power electronics, the aim is to use power-switching

devices that operate at higher and higher frequencies. Hence,

the size and weight of output transformers, inductors, and

filter capacitors will decrease. As a result, MOSFETs are now

used extensively in power supply design that requires high

switching frequencies, including switching and resonant mode

power supplies and brushless dc motor drives. Because of its

large conduction losses, its power rating is limited to a few

kilowatts. Because of its many advantages over BJT devices,

modern MOSFET devices have received high market accep-

tance.

6.6 MOSFET Regions of Operation

Most MOSFET devices used in power electronics applications

are of the n-channel, enhancement type, like that shown in

Fig. 6.6a. For the MOSFET to carry drain current, a channel

between the drain and the source must be created. This occurs

when the gate-to-source voltage exceeds the device threshold

voltage VTh. For vGS > VTh, the device can be either in the

triode region, which is also called ‘‘constant resistance’’ region,

or in the saturation region, depending on the value of vDS. For

given vGS, with small vDS (vDS < vGS ÿ VTh), the device oper-

ates in the triode region (saturation region in the BJT), and for

larger vDS ðvDS > vGS ÿ VTh), the device enters the saturation

region (active region in the BJT). For vGS < VTh, the device

turns off, with drain current almost equal to zero. Under both

regions of operation, the gate current is almost zero. This is

why the MOSFET is known as a voltage-driven device and,

therefore, requires simple gate control circuit.

The characteristic curves in Fig. 6.6b show that there are

three distinct regions of operation labeled as triode region,

saturation region, and cut-off region. When used as a switch-

ing device, only triode and cut-off regions are used, whereas,

when it is used as an amplifier, the MOSFET must operate in

the saturation region, which corresponds to the active region

in the BJT.

The device operates in the cut-off region (off-state) when

vGS < vTh, resulting in no induced channel. In order to operate

the MOSFET in either the triode or saturation region, a

channel must first be induced. This can be accomplished by

applying gate-to-source voltage that exceeds vTh, that is,

vGS > VTh

Once the channel is induced, the MOSFET can operate in

either the triode region (when the channel is continuous with

no pinch-off, resulting in drain current proportional to the

channel resistance) or the saturation region (the channel

pinches off, resulting in constant ID). The gate-to-drain bias

voltage (vGD) determines whether the induced channel enters

pinch-off or not. This is subject to the following restriction.

Cds

Cgd

Cgs

(a)

FIGURE 6.9 (a) Equivalent MOSFET representation including junc-

tion capacitances; and (b) representation of this physical location.

n+

n-

n+

n+

p

G

D

S

SiO2

S

Cg

d

Cds

Cgs

(b)

6 The Power MOSFET 83

Figure 20: (a) Equivalent MOSFET representation including junction capaci-tances; and (b) representation of this physical location.[9, p. 83]

In figure 20 you can see the physical structure of a mosfet with the location ofthe capacitances (b) and an equivalent representation (a). The behaviour of thecapacitance charging and discharging is almost exactly the same as with an igbt.In the following section this is explained in more detail. To understand the similarbehaviour in can be assumed that the drain of a mosfet is the collector of an igbtand the source of a mosfet is the emitter of an igbt.

3.5.2 IGBT

Igbt stands for insulated-gate bipolar transistor. The igbt combines the advan-tages of a mosfet and a bipolar transistor. The gate of an igbt, like a mosfet, isvoltage driven and needs little to ideally zero gate current. Like a bipolar transistorit is capable of conducting high currents. In figure 21 the physical structure, theequivalent circuit and the capacitance model are shown.

25

characteristics, good switching speed and excellent safe oper-

ating area. Compared to power MOSFETs the absence of the

integral body diode can be considered as an advantage or

disadvantage depending on the switching speed and current

requirements. An external fast-recovery diode or a diode in the

same package can be used for specific applications. The IGBTs

are replacing MOSFETs in high-voltage applications with

lower conduction losses. They have on-state voltage and

current density comparable to a power BJT with higher

switching frequency. Although they exhibit fast turn-on,

their turn-off is slower than a MOSFET because of current

fall time. Also, IGBTs have considerably less silicon area than

similar rated power MOSFETs. Therefore, by replacing power

MOSFETs with IGBTs, the efficiency is improved and cost is

reduced. Additionally, IGBT is known as a conductivity-

modulated FET (COMFET), insulated gate transistor (IGT),

and bipolar-mode MOSFET.

As soft-switching topologies offer numerous advantages

over the hard-switching topologies, their use is increasing in

the industry. By use of soft-switching techniques IGBTs can

operate at frequencies up to hundreds of kilohertz. However,

IGBTs behave differently under soft-switching condition

compared to their behavior under hard-switching conditions.

Therefore, the device trade-offs involved in soft-switching

circuits are different than those in the hard-switching case.

Application of IGBTs in high-power converters subjects them

to high-transient electrical stress such as short-circuit and

turn-off under clamped inductive load, and therefore robust-

ness of IGBTs under stress conditions is an important require-

ment. Traditionally, there has been limited interaction between

device manufacturers and power electronic circuit designers.

Therefore, the shortcomings of device reliability are observed

only after the devices are used in actual circuits. This signifi-

cantly slows down the process of power electronic system

optimization. However, the development time can be signifi-

cantly reduced if all issues of device performance and relia-

bility are taken into consideration at the design stage. As high

stress conditions are quite frequent in circuit applications, it is

extremely cost efficient and pertinent to model the IGBT

performance under these conditions. However, development

of the model can follow only after the physics of device

operation under stress conditions imposed by the circuit is

properly understood. Physically based process and device

simulations are a quick and cheap way of optimizing the

IGBT. The emergence of mixed-mode circuit simulators in

which semiconductor carrier dynamics is optimized within the

constraints of circuit level switching is a key design tool for

this task.

7.2 Basic Structure and Operation

The vertical cross section of a half cell of one of the parallel

cells of an n-channel IGBT shown in Fig. 7.2 is similar to that

of a double-diffused power MOSFET (DMOS) except for a

pþ-layer at the bottom. This layer forms the IGBT collector

and a pn-junction with nÿ-drift region, where conductivity

modulation occurs by injecting minority carriers into the

drain drift region of the vertical MOSFET. Therefore, the

current density is much greater than a power MOSFET and

the forward voltage drop is reduced. The pþ-substrate, nÿ-

drift layer and pþ-emitter constitute a BJT with a wide base

region and hence small current gain. The device operation can

be explained by a BJT with its base current controlled by the

voltage applied to the MOS gate. For simplicity, it is assumed

that the emitter terminal is connected to the ground potential.

By applying a negative voltage to the collector, the pn-junction

between the pþ-substrate and the nÿ-drift region is reverse-

biased, which prevents any current flow and the device is in its

reverse blocking state. If the gate terminal is kept at ground

potential but a positive potential is applied to the collector, the

pn-junction between the p-base and nÿ-drift region is reverse-

biased. This prevents any current flow and the device is in its

FIGURE 7.1 Hybrid Darlington configuration of MOSFET and BJT.

(a) (b)

FIGURE 7.2 The IGBT (a) half-cell vertical cross section and (b)

equivalent circuit model.

102 S. Abedinpour and K. Shenai

(a)

Application Note

Revision:

Issue Date:

Prepared by:

00

2007-10-31

Markus Hermwille

Key Words: IGBT driver, calculation, gate charge, power, gate current

IGBT Driver Calculation

AN-7004

1 / 8 2007-10-31 – Rev00 © by SEMIKRON

Introduction.............................................................................................................................................................................1 Gate Charge Curve ................................................................................................................................................................1 Measuring the Gate Charge ...................................................................................................................................................3 Determining the Gate Charge.................................................................................................................................................3 Driver Output Power...............................................................................................................................................................5 Gate Current...........................................................................................................................................................................5 Peak Gate Current..................................................................................................................................................................6 Selection Suitable IGBT Driver...............................................................................................................................................6 DriverSel – The Easy IGBT Driver Calculation Method ..........................................................................................................6 Symbols and Terms used.......................................................................................................................................................7 References .............................................................................................................................................................................8 This application note provides information on the determination of driver output performance for switching IGBTs. The information given in this application note contains tips only and does not constitute complete design rules; the information is not exhaustive. The responsibility for proper design remains with the user. Introduction One key component of every power electronic system is – besides the power modules themselves – the IGBT driver, which forms the vital interface between the power transistor and the controller. For this reason, the choice of driver and thus the calculation of the right driver output power are closely linked with the degree of reliability of a converter solution. Insufficient driver power or the wrong choice of driver may result in module and driver malfunction. Gate Charge Curve The switching behaviour (turn-on and turn-off) of an IGBT module is determined by its structural, internal capacitances (charges) and the internal and outer

resistances. When calculating the output power requirements for an IGBT driver circuit, the key parameter is the gate charge. This gate charge is characterised by the equivalent input capacitances CGC and CGE.

IGBT Capacitances

The following table explains the designation of the capacitances. In IGBT data sheets these capacitances are specified as voltage-dependent low-signal capacitances of IGBTs in the “off” state. The capacitances are independent of temperature, but dependent on the collector-emitter voltage, as shown in the following curve. This dependency is substantially higher at a very low collector-emitter voltage.

www.Semikron.com/Application/DriverCalculation

(b)

Figure 21: The IGBT (a) half-cell vertical cross section and equivalent circuitmodel[9, p. 102], (b) IGBT capacitances

Take a look at the igbt equivalent circuit in figure 21 (a). The igbt works as ifa bipolar npn transistor’s gate was driven by a mosfet’s gate. This npn transistorbecomes conductive and drives the gate of the high power pnp transistor.To switch an igbt efficiently the gate mosfet needs to be driven into saturationas quickly as possible. Therefore the capacitances seen in figure 21 (b) haveto be charged. In figure 22 (a) the sequence of charging the capacitances isshown. At first the gate-emitter capacitor is charged. When the gate-emittervoltage VGE(th) is reached, the igbt begins to conduct. When VGE(pl) is reached thegate-collector capacitance is charged in parallel. After crossing the Miller plateauthe gate-emitter capacitance becomes fully charged an VGE(on) is reached. Thegate charge of an igbt plays an important role in selecting and calculating a driver.The information about the gate charge can be found in the datasheet of the igbtmanufacturer. In 22 (b) an example gate charge curve can be seen. Dependingon the voltage applied to the collector and emitter and the ambient temperature,the capacitance varies.

26

Application Note AN-7004

2 / 8 2007-10-31 – Rev00 © by SEMIKRON

Parasitic and Low-Signal Capacitances Cies, Coes, Cres = f(VCE)

Capacitances Designation

CGE Gate-emitter capacitance

CCE Collector-emitter capacitance

CGC Gate-collector capacitance (Miller capacitance)

Low-Signal Capacitances Designation

Cies = CGE + CGC Input capacitance

Cres = CGC Reverse transfer capacitance

Coes = CGC + CCE Output capacitance

VGE = 0V f = 1MHz

The following table shows simplified the gate charge waveforms VGE= f(t), IG=f(t), VCE=f(t), and IC=f(t) during turn-on of the IGBT. The turn-on process can be divided into three stages. These are charging of the gate-emitter capacitance, charging of the gate-collector capacitance and charging of the gate-emitter capacitance until full IGBT saturation. To calculate the switching behaviour and the driver, the input capacitances may only be applied to a certain

extent. A more practical way of determining the driver output power is to use the gate charge characteristic given in the IGBT data sheets. This characteristic shows the gate-emitter voltage VGE over the gate charge QG. The gate charge increases in line with the current rating of IGBT modules. The gate charge is also dependent on the DC-Link voltage, albeit to a lesser extent. At higher operation voltages the gate charge increases due to the larger influence of the Miller capacitance. In most applications this effect is negligible.

Simplified Gate Charge Waveforms Gate Charge Characteristic

QGE QGC QGE

VGE(on)

VGE(off)

t0 switching interval: The gate current IG charges the input capacitance CGE and the gate-emitter voltage VGE rises to

VGE(th). Depending on the gate resistor, several amperes may be running in this state. As VGE is still below VGE(th), no collector current flows during this period and VCE is maintained at VCC level.

(a)

Application Note AN-7004

2 / 8 2007-10-31 – Rev00 © by SEMIKRON

Parasitic and Low-Signal Capacitances Cies, Coes, Cres = f(VCE)

Capacitances Designation

CGE Gate-emitter capacitance

CCE Collector-emitter capacitance

CGC Gate-collector capacitance (Miller capacitance)

Low-Signal Capacitances Designation

Cies = CGE + CGC Input capacitance

Cres = CGC Reverse transfer capacitance

Coes = CGC + CCE Output capacitance

VGE = 0V f = 1MHz

The following table shows simplified the gate charge waveforms VGE= f(t), IG=f(t), VCE=f(t), and IC=f(t) during turn-on of the IGBT. The turn-on process can be divided into three stages. These are charging of the gate-emitter capacitance, charging of the gate-collector capacitance and charging of the gate-emitter capacitance until full IGBT saturation. To calculate the switching behaviour and the driver, the input capacitances may only be applied to a certain

extent. A more practical way of determining the driver output power is to use the gate charge characteristic given in the IGBT data sheets. This characteristic shows the gate-emitter voltage VGE over the gate charge QG. The gate charge increases in line with the current rating of IGBT modules. The gate charge is also dependent on the DC-Link voltage, albeit to a lesser extent. At higher operation voltages the gate charge increases due to the larger influence of the Miller capacitance. In most applications this effect is negligible.

Simplified Gate Charge Waveforms Gate Charge Characteristic

QGE QGC QGE

VGE(on)

VGE(off)

t0 switching interval: The gate current IG charges the input capacitance CGE and the gate-emitter voltage VGE rises to

VGE(th). Depending on the gate resistor, several amperes may be running in this state. As VGE is still below VGE(th), no collector current flows during this period and VCE is maintained at VCC level.

(b)

Figure 22: (a) Simplified gate charge waveforms, (b) Gate charge characteristic[5, p. 2]

27

4 Matlab Simulation

powergui

ContinuousIdeal Switch

abc to dq transformation

iaibic

theta_e

id

iq fcn

Voltage Measurement2

v+-

Voltage Measurement1

v+-

Voltage Measurement

v+-

Vdc

Space Vector Generator and Gate Drive

vd_e

vq_e

ramptime

theta_e

Ts

Vdc

S1S2S3S4S5S6

sectort1

fcn

Scope5

Scope4

Scope3

Scope2

Scope1

Scope

RepeatingSequence

Product1

Product

Permanent MagnetSynchronous Machine

m

A

B

C

? ? ?

IGBT/S6/Sb'

g CE

IGBT/S5/Sc

g CE

IGBT/S4/Sa'

g CE

IGBT/S3/Sb

g CE

IGBT/S2/Sc'

g CE

IGBT/S1/Sa

g CE

Gain9

P/2

Gain3

60/(2*pi)

Gain2

psim

Gain1

P/2

DiscretePI Controller1

PI

DiscretePI Controller

PI

Current Measurement1

i+-

Current Measurement

i+-

Constant6

Ts

Constant5

Vdc

Constant4

0

Constant3

Ld

Constant2

Lq

Constant1

i_Sqref

Constant

i_Sdref

desired id_e

desired iq_e

S6S6S5

S5

S4S4

S3S3

S2S2

S1

S1

current ia

current ib

current ib

id_e_synchronousiq_e_synchronous

current ic

vd_e_synchronous

vq_e_synchronous

ramptime

ramptime

ramptime

<Rotor angle thetam (rad)>

<Rotor angle thetam (rad)>

<Rotor speed wm (rad/s)>

Rotor speed (rpm)

Figure 23: Matlab simulation of space vector pwm

As seen in figure 23 a Matlab simulation has been created to simulate thedynamic behaviour of a PMSM. Until now the results from the situation are notas expected. The simulation needs to be studied in more detail to see where theproblem is. The code for the space vector PWM and Clark-Park transformationcan be found in appendix A.4.

28

5 Schematic

5.1 Power Supply Module

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

B

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

APPROVED:

ECO NO:

A

B

D

DATE:

1

2

3

4

5

6

D

C

A

B

C

LTR

Voltage Supplies

D-SUB Connector Power

1

IN

2

GND

3

OUT

U1

LM7805

C1

330nF

C2

100nF

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

+

C34

100µF

+

C35

10µF

1

IN

2

GND

3

OUT

U6

LM7805

C13

330nF

C14

100nF

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

J3-1

J3-2

J3-3

J3-4

J3-5

J3-6

J3-7

J3-8

J3-9

J3-10

J2-11

J2-12

J2-13

J2-14

J2-15

J2-16

J2-17

J2-18

J2-19

J2-20

J3-11

J3-12

J3-13

J3-14

J3-15

J3-16

J3-17

J3-18

J3-19

J3-20

D17

F1

1

2

HEAT1

HEATSINK

1

-IN

2

+IN

4

-OUT

3

+OUT

DCDC1

AEE03A18-L

+12V

+12V

+12V

+12V

+12V

+5V

+12V_ISOLATED

GND_ISOLATED

+12V_ISOLATED

+5V_ISOLATED

+5V_ISOLATED

+5V

Figure 24: Power supply schematic

In figure 24 the schematic of the power supply can be seen. The 12V powerfrom the car’s system is converted to 5V by a linear voltage regulator to supplythe low voltage parts. To supply the galvanically isolated parts on the high voltageside a DC to DC inverter is used. Because some parts on the high voltage siderequire 5V as well another linear voltage regulator is used to supply 5V.

29

5.2 Microcontroller Modules

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A1

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

Teensy2++

C2000 Launchpad

CAN Connector

JTAG Connector

1

GND

2

PB7/PCINT7/OC.0A/OC.1C

3

PD0/OC0B/SCL/INT0

4

PD1/OC2B/SDA/INT1

5

PD2/RXD1/INT2

6

PD3/TXD1/INT3

7

PD4/ICP1

8

PD5/XCK1

9

PD6/T1

10

PD7/T0

11

PE0/WR

12

PE1/RD

13

PC0/A8

14

PC1/A9

15

PC2/A10

16

PC3/A11/T.3

17

PC4/A12/OC.3C

18

PC5/A13/OC.3B

19

PC6/A14/OC.3A

20

PC7/A15/IC.3/CLKO

21

VCC

22

PB6/PCINT6/OC.1B

23

PB5/PCINT5/OC.1A

24

PB4/PCINT4/OC.2A

25

PB3/PDO/PCINT3/MISO

26

PB2/PDI/PCINT2/MOSI

27

PB1/PCINT1/SCLK

28

PB0/SS/PCINT0

29

PE7/INT.7/AIN.1/UVCON

30

PE6/INT.6/AIN.0

31

GND

32

AREF

33

PF0/ADC0

34

PF1/ADC1

35

PF2/ADC2

36

PF3/ADC3

37

PF4/ADC4/TCK

38

PF5/ADC5/TMS

39

PF6/ADC6/TDO

40

PF7/ADC7/TDI

41

+5V

42

GN

D

43

RST

B18

TEENSY++2.0

J1-1

+3.3V

J1-2

ADCINA6

J1-3

GPIO28/SCIRXDA/SDAA/TZ2

J1-4

GPIO29/SCITXDA/SCLA/TZ3

J1-5

GPIO34/COMP2OUT/RSVD/RSVD

J1-6

ADCINA4

J1-7

GPIO18/SPICLK/SCITXDA

J1-8

ADCINA2

J1-9

ADCINB2

J1-10

ADCINB4

J2-1

GND

J2-2

GPIO19/SPISTEA/SCIRXDA/ECAP1

J2-3

GPIO12/TZ1/SCITXDA/RSVD

J2-4

NC

J2-5

RESET

J2-6

GPIO16^32/SPISIMOA^SDAA/RSVDÊPWMSYNCI

J2-7

GPIO17^33/SPISOMIA^SCLA/RSVDÊPWMSYNCO

J2-8

GPIO6/EPWM4A/EPWMSYNCI/EPWMSYNCO

J2-9

GPIO7/EPWM4B/SCIRXDA/RSVD

J2-10

ADCINB6

J6-1

0

NC

J6-9

NC

J6-8

GPIO

17^

33/S

PIS

OM

IA^

SCLA/R

SVD

ÊPW

MSYN

CO

J6-7

GPIO

16^

32/S

PIS

IMO

A^

SD

AA/R

SVD

ÊPW

MSYN

CI

J6-6

GPIO

5/E

PW

M3B/R

SVD

/ECAP1

J6-5

GPIO

4/E

PW

M3A/R

SVD

/RSVD

J6-4

GPIO

3/E

PW

M2B/R

SVD

/CO

MP2O

UT

J6-3

GPIO

2/E

PW

M2A/R

SVD

/RSVD

J6-2

GPIO

1/E

PW

M1B/R

SVD

/CO

MP1O

UT

J6-1

GPIO

0/E

PW

M1A/R

SVD

/RSVD

J5-1

0

NC

J5-9

AD

CIN

B7

J5-8

AD

CIN

B3

J5-7

AD

CIN

B1

J5-6

AD

CIN

A0

J5-5

AD

CIN

A1

J5-4

AD

CIN

A3

J5-3

AD

CIN

A7

J5-2

GN

D

J5-1

+5V

J3-1

GND

J3-2

GND

J3-3

+3.3V

B1

C2000LAUNCHPAD

1

GND

2

CANL

3

GND

4

NC

5

NC

6

NC

7

CANH

8

NC

9

NC

10

GND

20

VCC

19

SPI_CS_TEENSY

18

SPI_MISO_TEENSY

17

SPI_MOSI_TEENSY

16

SPI_CLK_TEENSY

15

SPI_INT_TEENSY

14

NC

13

GND

12

GND

11

GND

CANMODULE1

CANMODULE

1

VSS

2

VDD

3

V0

4

RS

5

R/W

6

EN

7

DB0

8

DB1

9

DB2

10

DB3

11

DB4

12

DB5

13

DB6

14

DB7

LCD

1

GTC-1

6026

1

+5V

2

NC

3

NC

4

TEMP_OS

5

SCL

6

SDA

7

NC

8

GND

9

GND

10

GND

20

+5V2

19

GND2

18

NC

17

SDA2

16

SCL2

15

TEMP_OS2

14

NC

13

GND2

12

GND2

11

GND2

OPTO1

OPTOCOUPLERMODULE

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

1

+12V

2

NC

9

NC

10

GND

11

NC

17

SPI_MISO_C2000

18

SPI_MOSI_C2000

19

SPI_CLK_C2000

20

GND

40

+12V

39

GND

34

R2D_A0

33

R2D_A1

32

R2D_LOT

31

R2D_RESET

30

R2D_WR/FSYNC

29

R2D_SAMPLE

22

NC

21

NC

R2D1

RESOLVER2DIGITALMODULE

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

1

+12V

2

+12V

3

+12V

4

NC

5

NC

6

NC

7

NC

8

NC

9

GND

10

GND

11

GND

12

NC

13

NC

14

NC

15

NC

16

NC

17

NC

18

+5V

19

+5V

20

+5V

40

+12V

39

+12V

38

+12V

37

NC

36

NC

31

+12V_ISOLATED

30

+12V_ISOLATED

29

+12V_ISOLATED

28

NC

27

GND_ISOLATED

26

GND_ISOLATED

25

GND_ISOLATED

24

NC

23

+5V_ISOLATED

22

+5V_ISOLATED

21

+5V_ISOLATED

POWER1

POWERSUPPLYMODULE

1

GND

2

NC

3

NC

4

NC

5

EPWM3A

6

+5V

7

EPWM2B

8

EPWM2A

9

EPWM1B

10

EPWM1A

11

EPWM3B

12

CURRENT_SENS1_OUT

13

CURRENT_SENS2_OUT

14

OVERCURRENT1_FAULT

15

OVERCURRENT2_FAULT

16

OVERCURRENT3_FAULT

17

+5V

18

NC

19

NC

20

GND

21

NC

22

PC7_TEENSY

23

PC6_TEENSY

24

PC5_TEENSY

25

PC4_TEENSY

26

PC3_TEENSY

27

PC2_TEENSY

28

PC1_TEENSY

29

PC0_TEENSY

30

PE0_TEENSY

31

PE1_TEENSY

32

OVER_CURRENT_FAULT_RESET

33

NC

34

NC

35

SDA_ISOLATED

36

SCL_ISOLATED

37

TEMP_OS_ISOLATED

38

NC

39

NC

40

NC

51

NC

52

NC

53

EPWM2A

54

EPWM1A

55

+5V

56

NC

57

NC

58

GND

59

CURRENT_SENS1_OUT

60

+5V

119

GND_ISOLATED

118

NC

117

NC

116

NC

115

NC

114

NC

113

NC

112

NC

111

NC

110

+5V_ISOLATED

109

NC

108

+12V_ISOLATED

107

NC

106

NC

105

NC

104

NC

103

NC

102

NC

101

NC

100

NC

99

NC

98

NC

97

NC

96

NC

95

NC

94

NC

93

NC

92

NC

91

NC

90

NC

120

NC

89

NC

88

NC

87

NC

86

NC

85

NC

84

NC

83

NC

82

NC

81

NC

80

NC

79

NC

78

NC

77

NC

76

NC

75

NC

74

NC

73

NC

72

SDA_ISOLATED

71

SCL_ISOLATED

70

TEMP_OS_ISOLATED

69

NC

68

EPWM3A

67

NC

66

CURRENT_SENS3_OUT

65

NC

64

NC

63

NC

62

NC

61

NC

INV1

INVERTERMODULEMOSFET

1

2

R1

120R

1

2

R2

1k2R

D1

C1

10nF

1

2

R3

120R

1

2

R4

1k2R

D2

C2

10nF

1

2

R5

120R

1

2

R6

1k2R

D3

C3

10nF

1

2

R7

120R

1

2

R8

1k2R

D4

C4

10nF

1

2

R9

120R

1

2

R10

1k2R

D5

C5

10nF

1

2

R11

120R

1

2

R12

1k2R

D6

C6

10nF

1

2

R13

120R

1

2

R14

1k2R

D7

C7

10nF

1

2

R15

120R

1

2

R16

1k2R

D8

C8

10nF

1

2

R17

120R

1

2

R18

1k2R

D9

C9

10nF

1

2

R19

120R

1

2

R20

1k2R

D10

C10

10nF

1

2

R21

120R

1

2

R22

1k2R

D11

C11

10nF

1

2

R23

120R

1

2

R24

1k2R

D12

C12

10nF

1

2

R25

120R

1

2

R26

1k2R

D13

C13

10nF

1

2

R27

120R

1

2

R28

1k2R

D14

C14

10nF

1

2

R29

120R

1

2

R30

1k2R

D15

C15

10nF

1

2

R31

120R

1

2

R32

1k2R

D16

C16

10nF

1

2

R33

120R

1

2

R34

1k2R

D17

C17

10nF

1

2

R35

120R

1

2

R36

1k2R

D18

C18

10nF

1

2

R37

120R

1

2

R38

1k2R

D19

C19

10nF

1

2

R39

120R

1

2

R40

1k2R

D20

C20

10nF

1

2

R43

120R

1

2

R44

1k2R

D22

C22

10nF

1

2

R45

120R

1

2

R46

1k2R

D23

C23

10nF

1

2

R41

120R

1

2

R42

1k2R

D21

C21

10nF

1

2

R47

120R

1

2

R48

1k2R

D24

C24

10nF

1

2

R49

120R

1

2

R50

1k2R

D25

C25

10nF

1

2

R51

120R

1

2

R52

1k2R

D26

C26

10nF

1

2

R54

1k2R

1

2

R69

120R

1

2

R71

120R

1

2

R73

120R

1

2

R75

120R

1

2

R77

120R

1

2

R79

120R

FET1

FET2

1

2

R55

120R

1

2

R56

1k2R

D28

1

2

R57

120R

1

2

R59

120R

1

2

R60

1k2R

D30

C29

10nF

C30

10nF

1

2

R61

120R

1

2

R62

1k2R

D32

C31

10nF

1

2

R63

120R

1

2

R64

1k2R

D33

C32

10nF

1

2

R65

120R

1

2

R66

1k2R

D31

C33

10nF

1

2

R67

120R

D40

C40

10nF

1

2

R81

120R

D41

C41

10nF

1

2

R83

1k2R

1

2

R84

1k2R

1

2

R85

47k

1

2

R86

47k

1

2

R87

120R

D42

1

2

R89

120R

1

2

R91

120R

1

2

R93

120R

1

2

R95

120R

1

2

R97

120R

1

2

R99

120R

1

2

R100

1k2R

D48

C48

10nF

1

2

R101

120R

1

2

R102

1k2R

D49

C49

10nF

1

2

R103

120R

1

2

R104

1k2R

D50

C50

10nF

1

2

R105

120R

1

2

R106

1k2R

D51

C51

10nF

1

2

R107

120R

1

2

R108

1k2R

D52

C52

10nF

1

2

R109

120R

1

2

R110

1k2R

D53

C53

10nF

1

2

R111

120R

1

2

R112

1k2R

D54

C54

10nF

1

2

R113

120R

1

2

R114

1k2R

D55

C55

10nF

1

2

R115

120R

1

2

R117

120R

1

2

R130

120R

1

2

R131

1k2R

D69

C58

10nF

D43

D44

D45

D46

D34

D35

D36

D37

D38

D39

D47

D56

D29

1

2

R58

120R

D57

1

2

R70

1k2R

1

2

R72

1k2R

C34

10nF

C35

10nF

C36

10nF

C37

10nF

C38

10nF

C39

10nF

C42

10nF

C43

10nF

1

2

R92

1k2R

1

2

R94

1k2R

1

2

R96

1k2R

1

2

R98

1k2R

1

2

R116

1k2R

1

2

R118

1k2R

D58

C44

10nF

C45

10nF

C46

10nF

C47

10nF

C56

10nF

C57

10nF

1

2

R119

1k2R

1

2

R120

1k2R

C59

10nF

C60

10nF

1

2

R53

1k2R

1

2

R121

1k2R

1

2

R122

1k2R

1

2

R123

120R

1

2

R124

120R

1

2

R125

120R

C27

10nF

C28

10nF

C61

10nF

D27

D59

D60

+12V

+12V

+12V

+12V

+5V

EPWM3A

EPWM2B

EPWM2A

EPWM1B

EPWM1A

EPWM3B

CURRENT_SENS1_OUT

PC7_TEENSY

PC6_TEENSY

PC5_TEENSY

PC4_TEENSY

PC3_TEENSY

PC2_TEENSY

PC1_TEENSY

PC0_TEENSY

PE0_TEENSY

PE1_TEENSY


SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

EPWM2A

EPWM1A

CURRENT_SENS1_OUT

EPWM3A

TEMP_OS_ISOLATED

SCL_ISOLATED

SDA_ISOLATED

CANL

CANH

TEMP_OS_ISOLATED

SCL_ISOLATED

SDA_ISOLATED

SDA

SCL

TEMP_OS

CANL

CANH

PF4/TCK_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

JTAG_NSRST

PF7/TDI_TEENSY

+5V

PD6_LCD_RW


PD5_LCD_EN

PD7_LCD_RS

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PE1_TEENSY

PE0_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

PF4/TCK_TEENSY

PF7/TDI_TEENSY

PF3_TEENSY

PF2_TEENSY

PF1_TEENSY

PF0_TEENSY

SPI_CLK_TEENSY

SPI_MOSI_TEENSY

SPI_MISO_TEENSY

INT.7_TEENSY

JTAG_NSRST

EPW

M1A

EPW

M1B

EPW

M2A

EPW

M2B

EPW

M3A

EPW

M3B

TEMP_OS

OVERCURRENT1_FAULT

OVERCURRENT2_FAULT

OVERCURRENT3_FAULT

OVERCURRENT3_FAULT

OVERCURRENT2_FAULT

OVERCURRENT1_FAULT

SDA

SCL

SPI_MISO_C2000

SDA

SCL

+3.3V

SPI_MOSI_C2000

SPI_MISO_C2000

R2D_LOT

R2D_RESET

R2D_A0

R2D_A1

R2D_A0

R2D_A1

R2D_LOT

R2D_RESET

R2D_WR/FSYNC

R2D_SAMPLE

SPI_

MO

SI_

C2000

SPI_

CLK_C2000

R2D

_SAM

PLE

R2D

_W

R/F

SYN

C

PD5_LCD_EN

PD6_LCD_RW

PD7_LCD_RS

PF7/TDI_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

PF4/TCK_TEENSY

PF3_TEENSY

PF2_TEENSY

PF1_TEENSY

PF0_TEENSY

SPI_SS_TEENSY

INT.7_TEENSY

SPI_CLK_TEENSY

SPI_MOSI_TEENSY

SPI_MISO_TEENSY

SPI_SS_TEENSY

SPI_CLK_C2000

+3.3V

CURRENT_SENS3_OUT

CURRENT_SENS2_OUT

CURRENT_SENS1_OUT

CURRENT_SENS2_OUT

CURRENT_SENS3_OUT

Figure 25: Teensy2++ schematic

In figure 25 and 26 the schematic of the Teensy2++ and the C2000 launchpadcan be seen. The I/Os of the microcontrollers are protected by a zener diodeagainst voltage transients. Also a resistor directly at the input protects the interiordiodes of the microcontroller against too high currents.

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A1

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

Teensy2++

C2000 Launchpad

CAN Connector

JTAG Connector

1

GND

2

PB7/PCINT7/OC.0A/OC.1C

3

PD0/OC0B/SCL/INT0

4

PD1/OC2B/SDA/INT1

5

PD2/RXD1/INT2

6

PD3/TXD1/INT3

7

PD4/ICP1

8

PD5/XCK1

9

PD6/T1

10

PD7/T0

11

PE0/WR

12

PE1/RD

13

PC0/A8

14

PC1/A9

15

PC2/A10

16

PC3/A11/T.3

17

PC4/A12/OC.3C

18

PC5/A13/OC.3B

19

PC6/A14/OC.3A

20

PC7/A15/IC.3/CLKO

21

VCC

22

PB6/PCINT6/OC.1B

23

PB5/PCINT5/OC.1A

24

PB4/PCINT4/OC.2A

25

PB3/PDO/PCINT3/MISO

26

PB2/PDI/PCINT2/MOSI

27

PB1/PCINT1/SCLK

28

PB0/SS/PCINT0

29

PE7/INT.7/AIN.1/UVCON

30

PE6/INT.6/AIN.0

31

GND

32

AREF

33

PF0/ADC0

34

PF1/ADC1

35

PF2/ADC2

36

PF3/ADC3

37

PF4/ADC4/TCK

38

PF5/ADC5/TMS

39

PF6/ADC6/TDO

40

PF7/ADC7/TDI

41

+5V

42

GND

43

RST

B18

TEENSY++2.0

J1-1

+3.3V

J1-2

ADCINA6

J1-3

GPIO28/SCIRXDA/SDAA/TZ2

J1-4

GPIO29/SCITXDA/SCLA/TZ3

J1-5

GPIO34/COMP2OUT/RSVD/RSVD

J1-6

ADCINA4

J1-7

GPIO18/SPICLK/SCITXDA

J1-8

ADCINA2

J1-9

ADCINB2

J1-10

ADCINB4

J2-1

GND

J2-2

GPIO19/SPISTEA/SCIRXDA/ECAP1

J2-3

GPIO12/TZ1/SCITXDA/RSVD

J2-4

NC

J2-5

RESET

J2-6

GPIO16^32/SPISIMOA^SDAA/RSVDÊPWMSYNCI

J2-7

GPIO17^33/SPISOMIA^SCLA/RSVDÊPWMSYNCO

J2-8

GPIO6/EPWM4A/EPWMSYNCI/EPWMSYNCO

J2-9

GPIO7/EPWM4B/SCIRXDA/RSVD

J2-10

ADCINB6

J6-1

0

NC

J6-9

NC

J6-8

GPIO

17^

33/S

PIS

OM

IA^

SCLA/R

SVD^

EPW

MSYNCO

J6-7

GPIO

16^

32/S

PIS

IMO

A^

SDAA/R

SVD^

EPW

MSYNCI

J6-6

GPIO

5/E

PW

M3B/R

SVD/E

CAP1

J6-5

GPIO

4/E

PW

M3A/R

SVD/R

SVD

J6-4

GPIO

3/E

PW

M2B/R

SVD/C

OM

P2O

UT

J6-3

GPIO

2/E

PW

M2A/R

SVD/R

SVD

J6-2

GPIO

1/E

PW

M1B/R

SVD/C

OM

P1O

UT

J6-1

GPIO

0/E

PW

M1A/R

SVD/R

SVD

J5-1

0

NC

J5-9

ADCIN

B7

J5-8

ADCIN

B3

J5-7

ADCIN

B1

J5-6

ADCIN

A0

J5-5

ADCIN

A1

J5-4

ADCIN

A3

J5-3

ADCIN

A7

J5-2

GND

J5-1

+5V

J3-1

GND

J3-2

GND

J3-3

+3.3V

B1

C2000LAUNCHPAD

1

GND

2

CANL

3

GND

4

NC

5

NC

6

NC

7

CANH

8

NC

9

NC

10

GND

20

VCC

19

SPI_CS_TEENSY

18

SPI_MISO_TEENSY

17

SPI_MOSI_TEENSY

16

SPI_CLK_TEENSY

15

SPI_INT_TEENSY

14

NC

13

GND

12

GND

11

GND

CANMODULE1

CANMODULE

1

VSS

2

VDD

3

V0

4

RS

5

R/W

6

EN

7

DB0

8

DB1

9

DB2

10

DB3

11

DB4

12

DB5

13

DB6

14

DB7

LCD1

GTC-1

6026

1

+5V

2

NC

3

NC

4

TEMP_OS

5

SCL

6

SDA

7

NC

8

GND

9

GND

10

GND

20

+5V2

19

GND2

18

NC

17

SDA2

16

SCL2

15

TEMP_OS2

14

NC

13

GND2

12

GND2

11

GND2

OPTO1

OPTOCOUPLERMODULE

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

1

+12V

2

NC

9

NC

10

GND

11

NC

17

SPI_MISO_C2000

18

SPI_MOSI_C2000

19

SPI_CLK_C2000

20

GND

40

+12V

39

GND

34

R2D_A0

33

R2D_A1

32

R2D_LOT

31

R2D_RESET

30

R2D_WR/FSYNC

29

R2D_SAMPLE

22

NC

21

NC

R2D1

RESOLVER2DIGITALMODULE

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

1

+12V

2

+12V

3

+12V

4

NC

5

NC

6

NC

7

NC

8

NC

9

GND

10

GND

11

GND

12

NC

13

NC

14

NC

15

NC

16

NC

17

NC

18

+5V

19

+5V

20

+5V

40

+12V

39

+12V

38

+12V

37

NC

36

NC

31

+12V_ISOLATED

30

+12V_ISOLATED

29

+12V_ISOLATED

28

NC

27

GND_ISOLATED

26

GND_ISOLATED

25

GND_ISOLATED

24

NC

23

+5V_ISOLATED

22

+5V_ISOLATED

21

+5V_ISOLATED

POWER1

POWERSUPPLYMODULE

1

GND

2

NC

3

NC

4

NC

5

EPWM3A

6

+5V

7

EPWM2B

8

EPWM2A

9

EPWM1B

10

EPWM1A

11

EPWM3B

12

CURRENT_SENS1_OUT

13

CURRENT_SENS2_OUT

14

OVERCURRENT1_FAULT

15

OVERCURRENT2_FAULT

16

OVERCURRENT3_FAULT

17

+5V

18

NC

19

NC

20

GND

21

NC

22

PC7_TEENSY

23

PC6_TEENSY

24

PC5_TEENSY

25

PC4_TEENSY

26

PC3_TEENSY

27

PC2_TEENSY

28

PC1_TEENSY

29

PC0_TEENSY

30

PE0_TEENSY

31

PE1_TEENSY

32


33

NC

34

NC

35

SDA_ISOLATED

36

SCL_ISOLATED

37

TEMP_OS_ISOLATED

38

NC

39

NC

40

NC

51

NC

52

NC

53

EPWM2A

54

EPWM1A

55

+5V

56

NC

57

NC

58

GND

59

CURRENT_SENS1_OUT

60

+5V

119

GND_ISOLATED

118

NC

117

NC

116

NC

115

NC

114

NC

113

NC

112

NC

111

NC

110

+5V_ISOLATED

109

NC

108

+12V_ISOLATED

107

NC

106

NC

105

NC

104

NC

103

NC

102

NC

101

NC

100

NC

99

NC

98

NC

97

NC

96

NC

95

NC

94

NC

93

NC

92

NC

91

NC

90

NC

120

NC

89

NC

88

NC

87

NC

86

NC

85

NC

84

NC

83

NC

82

NC

81

NC

80

NC

79

NC

78

NC

77

NC

76

NC

75

NC

74

NC

73

NC

72

SDA_ISOLATED

71

SCL_ISOLATED

70

TEMP_OS_ISOLATED

69

NC

68

EPWM3A

67

NC

66

CURRENT_SENS3_OUT

65

NC

64

NC

63

NC

62

NC

61

NC

INV1

INVERTERMODULEMOSFET

1

2

R1

120R

1

2

R2

1k2R

D1

C1

10nF

1

2

R3

120R

1

2

R4

1k2R

D2

C2

10nF

1

2

R5

120R

1

2

R6

1k2R

D3

C3

10nF

1

2

R7

120R

1

2

R8

1k2R

D4

C4

10nF

1

2

R9

120R

1

2

R10

1k2R

D5

C5

10nF

1

2

R11

120R

1

2

R12

1k2R

D6

C6

10nF

1

2

R13

120R

1

2

R14

1k2R

D7

C7

10nF

1

2

R15

120R

1

2

R16

1k2R

D8

C8

10nF

1

2

R17

120R

1

2

R18

1k2R

D9

C9

10nF

1

2

R19

120R

1

2

R20

1k2R

D10

C10

10nF

1

2

R21

120R

1

2

R22

1k2R

D11

C11

10nF

1

2

R23

120R

1

2

R24

1k2R

D12

C12

10nF

1

2

R25

120R

1

2

R26

1k2R

D13

C13

10nF

1

2

R27

120R

1

2

R28

1k2R

D14

C14

10nF

1

2

R29

120R

1

2

R30

1k2R

D15

C15

10nF

1

2

R31

120R

1

2

R32

1k2R

D16

C16

10nF

1

2

R33

120R

1

2

R34

1k2R

D17

C17

10nF

1

2

R35

120R

1

2

R36

1k2R

D18

C18

10nF

1

2

R37

120R

1

2

R38

1k2R

D19

C19

10nF

1

2

R39

120R

1

2

R40

1k2R

D20

C20

10nF

1

2

R43

120R

1

2

R44

1k2R

D22

C22

10nF

1

2

R45

120R

1

2

R46

1k2R

D23

C23

10nF

1

2

R41

120R

1

2

R42

1k2R

D21

C21

10nF

1

2

R47

120R

1

2

R48

1k2R

D24

C24

10nF

1

2

R49

120R

1

2

R50

1k2R

D25

C25

10nF

1

2

R51

120R

1

2

R52

1k2R

D26

C26

10nF

1

2

R54

1k2R

1

2

R69

120R

1

2

R71

120R

1

2

R73

120R

1

2

R75

120R

1

2

R77

120R

1

2

R79

120R

FET1

FET2

1

2

R55

120R

1

2

R56

1k2R

D28

1

2

R57

120R

1

2

R59

120R

1

2

R60

1k2R

D30

C29

10nF

C30

10nF

1

2

R61

120R

1

2

R62

1k2R

D32

C31

10nF

1

2

R63

120R

1

2

R64

1k2R

D33

C32

10nF

1

2

R65

120R

1

2

R66

1k2R

D31

C33

10nF

1

2

R67

120R

D40

C40

10nF

1

2

R81

120R

D41

C41

10nF

1

2

R83

1k2R

1

2

R84

1k2R

1

2

R85

47k

1

2

R86

47k

1

2

R87

120R

D42

1

2

R89

120R

1

2

R91

120R

1

2

R93

120R

1

2

R95

120R

1

2

R97

120R

1

2

R99

120R

1

2

R100

1k2R

D48

C48

10nF

1

2

R101

120R

1

2

R102

1k2R

D49

C49

10nF

1

2

R103

120R

1

2

R104

1k2R

D50

C50

10nF

1

2

R105

120R

1

2

R106

1k2R

D51

C51

10nF

1

2

R107

120R

1

2

R108

1k2R

D52

C52

10nF

1

2

R109

120R

1

2

R110

1k2R

D53

C53

10nF

1

2

R111

120R

1

2

R112

1k2R

D54

C54

10nF

1

2

R113

120R

1

2

R114

1k2R

D55

C55

10nF

1

2

R115

120R

1

2

R117

120R

1

2

R130

120R

1

2

R131

1k2R

D69

C58

10nF

D43

D44

D45

D46

D34

D35

D36

D37

D38

D39

D47

D56

D29

1

2

R58

120R

D57

1

2

R70

1k2R

1

2

R72

1k2R

C34

10nF

C35

10nF

C36

10nF

C37

10nF

C38

10nF

C39

10nF

C42

10nF

C43

10nF

1

2

R92

1k2R

1

2

R94

1k2R

1

2

R96

1k2R

1

2

R98

1k2R

1

2

R116

1k2R

1

2

R118

1k2R

D58

C44

10nF

C45

10nF

C46

10nF

C47

10nF

C56

10nF

C57

10nF

1

2

R119

1k2R

1

2

R120

1k2R

C59

10nF

C60

10nF

1

2

R53

1k2R

1

2

R121

1k2R

1

2

R122

1k2R

1

2

R123

120R

1

2

R124

120R

1

2

R125

120R

C27

10nF

C28

10nF

C61

10nF

D27

D59

D60

+12V

+12V

+12V

+12V

+5V

EPWM3A

EPWM2B

EPWM2A

EPWM1B

EPWM1A

EPWM3B

CURRENT_SENS1_OUT

PC7_TEENSY

PC6_TEENSY

PC5_TEENSY

PC4_TEENSY

PC3_TEENSY

PC2_TEENSY

PC1_TEENSY

PC0_TEENSY

PE0_TEENSY

PE1_TEENSY


SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

EPWM2A

EPWM1A

CURRENT_SENS1_OUT

EPWM3A

TEMP_OS_ISOLATED

SCL_ISOLATED

SDA_ISOLATED

CANL

CANH

TEMP_OS_ISOLATED

SCL_ISOLATED

SDA_ISOLATED

SDA

SCL

TEMP_OS

CANL

CANH

PF4/TCK_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

JTAG_NSRST

PF7/TDI_TEENSY

+5V

PD6_LCD_RW


PD5_LCD_EN

PD7_LCD_RS

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PE1_TEENSY

PE0_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

PF4/TCK_TEENSY

PF7/TDI_TEENSY

PF3_TEENSY

PF2_TEENSY

PF1_TEENSY

PF0_TEENSY

SPI_CLK_TEENSY

SPI_MOSI_TEENSY

SPI_MISO_TEENSY

INT.7_TEENSY

JTAG_NSRST

EPW

M1A

EPW

M1B

EPW

M2A

EPW

M2B

EPW

M3A

EPW

M3B

TEMP_OS

OVERCURRENT1_FAULT

OVERCURRENT2_FAULT

OVERCURRENT3_FAULT

OVERCURRENT3_FAULT

OVERCURRENT2_FAULT

OVERCURRENT1_FAULT

SDA

SCL

SPI_MISO_C2000

SDA

SCL

+3.3V

SPI_MOSI_C2000

SPI_MISO_C2000

R2D_LOT

R2D_RESET

R2D_A0

R2D_A1

R2D_A0

R2D_A1

R2D_LOT

R2D_RESET

R2D_WR/FSYNC

R2D_SAMPLE

SPI_

MO

SI_

C2000

SPI_

CLK_C2000

R2D_SAM

PLE

R2D_W

R/F

SYNC

PD5_LCD_EN

PD6_LCD_RW

PD7_LCD_RS

PF7/TDI_TEENSY

PF6/TDO_TEENSY

PF5/TMS_TEENSY

PF4/TCK_TEENSY

PF3_TEENSY

PF2_TEENSY

PF1_TEENSY

PF0_TEENSY

SPI_SS_TEENSY

INT.7_TEENSY

SPI_CLK_TEENSY

SPI_MOSI_TEENSY

SPI_MISO_TEENSY

SPI_SS_TEENSY

SPI_CLK_C2000

+3.3V

CURRENT_SENS3_OUT

CURRENT_SENS2_OUT

CURRENT_SENS1_OUT

CURRENT_SENS2_OUT

CURRENT_SENS3_OUT

Figure 26: C2000 launchpad schematic

30

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

B

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

APPROVED:

ECO NO:

A

B

D

DATE:

1

2

3

4

5

6

D

C

A

B

C

LTR

Optocoupler Isolation

1

SDA

7

SCL

3

TXD,SDA

2

RXD,SDA

5

TXD,SCL

6

RXD,SCL

8

VCC

4

GND

B11

P82B96

1

2

R22

¨1k5

1

2

R23

1k5

VF2

VF1

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B15

HCPL2630

1

2

R24

390

1

2

R25

390R

1

2

R26

390R

VF2

VF1

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B16

HCPL2630

1

2

R27

390

1

2

OC

U4-A

7417

1

2

R28

1k

3

4

OC

U4-B

7417

1

2

R34

390

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

J1-10

1

2

R1

1k

SDA

SCL

SCL

SDA_ISOLATED

SCL_ISOLATED

+5V_ISOLATED

TEMP_OS_ISOLATED

TEMP_OS

+5V

SCL

+5V

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

TEMP_OS

SDA

Figure 27: Optocoupler module schematic

5.3 Optocoupler Module

In figure 27 the optocoupler module can be seen. It uses the P82B96 IC (inte-grated circuit) and two fast optocouplers to galvanically isolate the high voltageside from the low voltage side of the I2C bus. This is to protect the low voltageside from a failure on the high voltage side and to prevent high voltage transientscoupled into the bus lines.

5.4 CAN Bus Module

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

B

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

APPROVED:

ECO NO:

A

B

D

DATE:

1

2

3

4

5

6

D

C

A

B

C

LTR

CAN Bus

1

TXCAN

2

RXCAN

3

CLKOUT/SOF

4

TX0RTS

5

TX1RTS

6

TX2RTS

7

OSC2

8

OSC1

9

VSS

18

VDD

17

RESET

16

CS

15

SO

14

SI

13

SCK

12

INT

11

RX0BF

10

RX1BF

B30

MCP2515

T1

10nH

C15

330nF

C16

330nF

C17

330nF

C18

330nF

D10

1

2

R41

60R

1

2

B31

1

TXD

2

VSS

3

VDD

4

RXD

8

RS

7

CANH

6

CANL

5

VREF

B34

MCP2551

C31

100nF

1

2

Y2

20MHz

C32

22pF

C33

22pF

1

2

R62

10k

K

A

D15

LED

K

A

D16

LED

1

2

R65

560R

1

2

R66

560R

J1-1

J1-2

J1-3

J1-4

J1-5

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

1

2

R1

60R

1

2

B1

C1

330nF

J1-6

J1-7

J1-8

J1-9

J1-10

CANL

CANH

SPI_MISO_TEENSY

SPI_MOSI_TEENSY

SPI_CLK_TEENSY

SPI_CS_TEENSY

SPI_INT_TEENSY

+5V

GND

CANL

CANH

SPI_INT_TEENSY

SPI_CS_TEENSY

SPI_MISO_TEENSY

SPI_MOSI_TEENSY

SPI_CLK_TEENSY

Figure 28: CAN bus module schematic

In figure 28 the CAN bus module can be seen. It uses the MCP2515 as the SPICan interface and the MCP2551 bus driver. A common mode choke is consideredin case of interference that leads to a bad bus. The choke is not placed on the

31

board yet. If the CAN bus works without the choke it is better to avoid using itbecause it creates high voltage transients at the driver’s bus input.

5.5 Inverter Module

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A1

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

Temperature Sensor

HV Measuring

Bootstrap Driver

Current Measurement

Isolation

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B8

SI8503-C-IS

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U2

FAN7382

B2

B3

1

2

R7

4R7

1

2

R8

4R7

C3

150nF

1

2

R9

5R

+

C4

+

C9

+

C10

+

C11

+

C12

J2-1

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B10

HCPL2630

1

2

R1

1k

1

2

R2

1k

1

2

R3

390R

1

2

R4

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U3

FAN7382

B4

B5

1

2

R5

4R7

1

2

R6

4R7

C5

150nF

1

2

R10

5R

+

C6

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B6

HCPL2630

1

2

R11

1k

1

2

R12

1k

1

2

R13

390R

1

2

R14

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U7

FAN7382

B7

B13

1

2

R15

4R7

1

2

R16

4R7

C7

150nF

1

2

R17

5R

+

C8

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B14

HCPL2630

1

2

R18

1k

1

2

R19

1k

1

2

R20

390R

1

2

R21

390R

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B12

SE95

1

2

R29

996k5

1

2

R30

46k9

1

2

R33

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B21

SE95

1

2

R36

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B25

SE95

1

2

R39

10k

1

2

R40

10k

1

VDD

2

VSS

3

AIN

5

SCL

4

SDA

ADC1

MCP3021A5T

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

J1-10

J1-11

J1-12

J1-13

J1-14

J1-15

J1-16

J1-17

J1-18

J1-19

J1-20

J3-1

J3-2

J3-3

J3-4

J3-5

J3-6

J3-7

J3-8

J3-9

J3-10

J3-11

J3-12

J3-13

J3-14

J3-15

J3-16

J3-17

J3-18

J3-19

J3-20

C1

100nF

+

C2

1

2

R22

4M7

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B1

SI8503-C-IS

C13

100nF

1

2

R23

4M7

D1

D2

D4

D5

D7

D8

1

2

R24

10k

1

2

R25

47k

J6-1

J6-2

J6-3

J6-4

J6-5

J6-6

J6-7

J6-8

J6-9

J6-10

J6-11

J6-12

J6-13

J6-14

J6-15

J6-16

J6-17

J6-18

J6-19

J6-20

3

4

OC

U1-B

7417

5

6

OC

U1-C

7417

9

8

OC

U1-D

7417

11

10

OC

U1-E

7417

13

12

OC

U1-F

7417

1

2

OC

U1-A

7417

-

+

2

3

1

U6-A

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B9

HCPL2630

1

2

R26

390R

1

2

R27

1k

1

1R

2

1S1

3

1S2

4

1Q

5

2R

6

2S

7

2Q

8

GND

16

VCC

15

4S

14

4R

13

4Q

12

3S1

11

3S2

10

3R

9

3Q

LATCH1

SN54LS279AN

1

2

R28

1k

1

2

OC

U5-A

74ALS05A

1

2

3

U9-A

74LS08

4

5

6

U9-B

74LS08

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B11

SI8503-C-IS

C16

100nF

1

2

R34

4M7

1

2

R41

47k

11

B0

10

B1

9

B2

8

B3

7

B4

6

B5

5

B6

4

B7

12

CS

13

WR

3

GND

14

VDD

16

RFB

1

I_OUT1

2

I_OUT2

15

VREF

U8

AD7524N

C15

100µF

-

+

6

5

7

U6-B

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B15

HCPL2630

1

2

R42

390R

1

2

R43

1k

1

2

R44

1k

3

4

OC

U5-B

74ALS05A

-

+

2

3

1

U14-A

LM393

1

2

R45

390R

5

6

OC

U5-C

74ALS05A

9

10

8

U10-C

74LS08

12

13

11

U10-D

74LS08

J2-2

F1

1

2

3

U10-A

74LS08

4

5

6

U10-B

74LS08

C18

15nF

1

2

R46

50R

J4-1

J4-2

J4-3

1

2

R47

10k

1

2

R48

10k

1

2

R49

10k

1

2

R50

10k

1

2

R51

10k

1

2

R52

10k

D3

D6

D9

D10

J7-1

J7-2

J7-3

J7-4

J7-5

J7-6

J7-7

J7-8

J7-9

J7-10

J8-1

J8-2

J8-3

J8-4

J8-5

J8-6

J8-7

J8-8

J8-9

J8-10

C19

15nF

J8-11

J8-12

J8-13

J8-14

J8-15

J8-16

J8-17

J8-18

J8-19

J8-20

J7-11

J7-12

J7-13

J7-14

J7-15

J7-16

J7-17

J7-18

J7-19

J7-20

J5-1

J5-2

J5-3

J5-4

J5-5

J5-6

J5-7

J5-8

J5-9

J5-10

J5-11

J5-12

J5-13

J5-14

J5-15

J5-16

J5-17

J5-18

J5-19

J5-20

1

2

OC

U4-A

7417

1

2

R31

390R

1

2

JUMPER1

2P-5.08

+

C14

+

C17

4.7µF

1

2

JUM

PER2

2P-2

.54

1

2

JUM

PER3

2P-2

.54

1

2

JUM

PER4

2P-2

.54

CURRENT_SENS1

+12V_ISOLATED

+5V_ISOLATED

CURRENT_SENS2

+12V_ISOLATED

+5V_ISOLATED

+12V_ISOLATED

+5V_ISOLATED

SDA_IS

OLATED

SCL_IS

OLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

CURRENT_SENS1_OUT

EPWM1A

EPWM1B

EPWM2A

EPWM2B

CURRENT_SENS2_OUT

EPWM1A

EPWM2A

+5V

EPWM1B

EPWM1A

EPW

M2B

EPW

M2A

EPWM3A

EPWM3B

CURRENT_SENS1_OUT

OVERCURRENT1_FAULT

OVERCURRENT1_FAULT

OVERCURRENT1_FAULT

CURRENT_SENS3

CURRENT_SENS3_OUT

EPWM3A

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PE0_TEENSY

PE1_TEENSY

OVERCURRENT_VOLTAGE_REF


CURRENT_SENS2_OUT

OVERCURRENT3_FAULT


CURRENT_SENS3_OUT


OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT3_FAULT

OVERCURRENT3_FAULT

CURRENT_SENS1

CURRENT_SENS2

CURRENT_SENS3

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PE0_TEENSY

PE1_TEENSY

SCL_ISOLATED

SDA_ISOLATED

EPWM3A

EPWM1A

EPWM2A

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

EPWM3B

CURRENT_SENS2_OUT

EPWM3A

SCL_ISOLATED

SDA_ISOLATED

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

CURRENT_SENS3_OUT

Figure 29: Mosfet inverter module schematic

In figure 29 the schematic of the inverter module can be seen. It includes theADC for measuring the battery’s voltage, the isolated bootstrap driver circuit, thetemperature sensor for the pair of mosfets, the current measurement and the twomosfet switches.

5.6 Resolver to Digital Converter Module

In figure 30 the schematic for the resolver to digital converter module can beseen. The motor’s resolver is connected at the terminals S1-S4 and R1-R2. R1and R2 supply the excitation voltage. S1-S4 receive the angle information of the

32

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A2

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

D-S

UB C

onnect

or Enco

der

1

RES1

2

CS

3

RD

4

WR/FSYNC

5

DGND

6

DVDD

7

CLKIN

8

XTALOUT

9

SOE

10

SAMPLE

11

DB15/SDO

12

DB14/SDI

36

A1

35

DOS

34

LOT

33

RESET

32

DIR

31

NM

30

B

29

A

28

DB0

27

DB1

26

DB2

25

DB3

37

A0

38

EXC

39

EXC

40

AGND

41

SIN

42

SIN

LO

43

AVDD

44

CO

SLO

45

CO

S

46

REFBYP

47

REFO

UT

48

RES0

24

DB4

23

DB5

22

DB6

21

DB7

20

DB8

19

DGND

18

VDRIV

E

17

DB9

16

DB10

15

DB11

14

DB12

13

DB13/S

CLK

B32

AD2S1210

C19

10µF

C20

10nF

C21

10nF

+

C22

4.7µF

C24

10nF

1

2

Y1

8.192MHz

C25

22pF

C26

22pF

C27

10nF

1

2

R42

15.4k

C29

120pF

1

2

R43

22k

1

2

R44

10k

1

2

R45

10k

D11

D12

1

2

R46

3R3

1

2

R47

2.2k

1

2

R48

3R3

1

2

R49

2.2k

E

B

C

Q1

E

B

C

Q2

1

2

R50

4R7

1

2

R51

4R7

1

2

R52

15.4k

C30

120pF

1

2

R53

22k

1

2

R54

10k

1

2

R55

10k

D13

D14

1

2

R56

3R3

1

2

R57

2.2k

1

2

R58

3R3

1

2

R59

2.2k

E

B

C

Q3

E

B

C

Q4

1

2

R60

4R7

1

2

R61

4R7

1

OUT1

2

-IN1

3

+IN1

B33-A

TS992

7

OUT2

6

-IN2

5

+IN2

B33-B

TS992

1

2

R63

10k

1

2

B36

1

2

R64

10k

1

2

B37

J3-1

J3-2

J3-3

J3-4

J3-5

J3-6

J3-7

J3-8

J3-9

J2-1

J2-2

J2-3

J2-4

J2-5

J2-6

J2-7

J2-8

J2-9

J2-10

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

J1-10

+

C1

4.7µF

+

C2

4.7µF

C3

680nF

J1-11

J1-12

J1-13

J1-14

J1-15

J1-16

J1-17

J1-18

J1-19

J1-20

J2-11

J2-12

J2-13

J2-14

J2-15

J2-16

J2-17

J2-18

J2-19

J2-20

+12V

+12V

+12V

+12V

S2

S4

S3

S1

+5V

+5V

R1

+5V

R2

SPI_

MIS

O_C2000

SPI_

MO

SI_

C2000

R2D_A0

R2D_A1

R2D_WR/FSYNC

R2D_SAMPLE

R2D_RESET

R2D_LO

T

SPI_CLK_C2000

+5V

+5V

S2

S4

S3

S1

R1

R2

SPI_MOSI_C2000

SPI_CLK_C2000

SPI_MISO_C2000

R2D_A0

R2D_A1

R2D_RESET

R2D_SAMPLE

R2D_WR/FSYNC

R2D_LOT

Figure 30: Resolver to digital converter module schematic

rotor. The output voltages of the resolver that are interpreted by the converter areexpressed as sine and cosine functions of the rotor angle θr:

Vd = V0 sin θr sinωrst

Vq = V0 cos θr sinωrst

33

6 Inverter Parts

In figure 31 the assembled mosfet inverter can be seen. It is separated into8 modules with the purpose to make failure search easier. Being a prototype ifsomething goes bad only the damaged module has to be replaced or redesigned.

Power Supply Module

C2000 Launchpad

Optocoupler Module Inverter Module Mosfet

CAN Bus Module

LCD

Teen

sy2

++

Resolver to Digital Converter

Module

Figure 31: Modules of the mosfet inverter

6.1 Switching Devices

The choice of the right switch depends on the voltage of the intermediate cir-cuit, the maximum current, the switching frequency and the ambient temperature.Lower switching frequencies are generally better because the on an off-state islonger compared to the switching time in which Rdson creates heat. What switch-ing frequencies are permissible for the switches and what frequencies are suitablefor the motor to be controlled has to be tested. For now a maximum switching fre-quency of 4kHz is assumed.

34

6.1.1 MOSFET Driver

In order to design a good driver we have to look at some requirements:To achieve a good efficiency with the inverter it is important to keep the switchinglosses as small as possible. Most of the losses are created during the on andoff switching of the device. During the transition of these two states the switchprovides a greater resistance and more power is turned into heat. This is dueto the fact that during a transition the mosfet is not ideally driven in saturation.The n-doped layer is not fully enhanced. A quick transition means less losses.This quick transition can be achieved by reducing the time it takes to charge anddischarge the gate capacitances of the switch. The charging and discharging timecan be reduced by providing a high enough current.The mosfets are switching a high voltage power source. The hard switching leadsto electromagnetic interference that can be coupled back into the system andeffect the electronics. Thus it is necessary to galvanically isolate the switchesfrom the low voltage electronics.Because each mosfet pair is connected in series a driver has to be implementedwhich can drive each mosfet separately without the risk of accidentally switchingon the upper switch. This could be caused by the flyback voltage generated bythe connected motor’s inductance. The flyback voltage can create a negativepotential which can lead the mosfet to switch on again.A bootstrap driver was chosen because of its simplicity and small cost. It has thedisadvantage that the on-time duty cycle is limited by the requirement to refreshthe charge in the bootstrap capacitor.

6.1.1.1 Bootstrap Driver Calculation

In figure 32 you can see the schematic of the driver circuit. The driver ic usedis FAN7382. The choice for this driver is based on recommendations accordingto the application note AN-6076 from Fairchild Semiconductor. The mosfet to bedriven is IXFH-FK170N10P.

35

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A1

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

Temperature Sensor

HV Measuring

Bootstrap Driver

Current Measurement

Isolation

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B8

SI8503-C-IS

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U2

FAN7382

B2

B3

1

2

R7

4R7

1

2

R8

4R7

C3

150nF

1

2

R9

5R

+

C4

+

C9

+

C10

+

C11

+

C12

J2-1

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B10

HCPL2630

1

2

R1

1k

1

2

R2

1k

1

2

R3

390R

1

2

R4

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U3

FAN7382

B4

B5

1

2

R5

4R7

1

2

R6

4R7

C5

150nF

1

2

R10

5R

+

C6

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B6

HCPL2630

1

2

R11

1k

1

2

R12

1k

1

2

R13

390R

1

2

R14

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U7

FAN7382

B7

B13

1

2

R15

4R7

1

2

R16

4R7

C7

150nF

1

2

R17

5R

+

C8

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B14

HCPL2630

1

2

R18

1k

1

2

R19

1k

1

2

R20

390R

1

2

R21

390R

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B12

SE95

1

2

R29

996k5

1

2

R30

46k9

1

2

R33

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B21

SE95

1

2

R36

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B25

SE95

1

2

R39

10k

1

2

R40

10k

1

VD

D

2

VSS

3

AIN

5

SCL

4

SD

A

AD

C1

MCP3021A5T

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

J1-10

J1-11

J1-12

J1-13

J1-14

J1-15

J1-16

J1-17

J1-18

J1-19

J1-20

J3-1

J3-2

J3-3

J3-4

J3-5

J3-6

J3-7

J3-8

J3-9

J3-10

J3-11

J3-12

J3-13

J3-14

J3-15

J3-16

J3-17

J3-18

J3-19

J3-20

C1

100nF

+

C2

1

2

R22

4M7

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B1

SI8503-C-IS

C13

100nF

1

2

R23

4M7

D1

D2

D4

D5

D7

D8

1

2

R24

10k

1

2

R25

47k

J6-1

J6-2

J6-3

J6-4

J6-5

J6-6

J6-7

J6-8

J6-9

J6-10

J6-11

J6-12

J6-13

J6-14

J6-15

J6-16

J6-17

J6-18

J6-19

J6-20

3

4

OC

U1-B

7417

5

6

OC

U1-C

7417

9

8

OC

U1-D

7417

11

10

OC

U1-E

7417

13

12

OC

U1-F

7417

1

2

OC

U1-A

7417

-

+

2

3

1

U6-A

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B9

HCPL2630

1

2

R26

390R

1

2

R27

1k

1

1R

2

1S1

3

1S2

4

1Q

5

2R

6

2S

7

2Q

8

GND

16

VCC

15

4S

14

4R

13

4Q

12

3S1

11

3S2

10

3R

9

3Q

LATCH1

SN54LS279AN

1

2

R28

1k

1

2

OC

U5-A

74ALS05A

1

2

3

U9-A

74LS08

4

5

6

U9-B

74LS08

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B11

SI8503-C-IS

C16

100nF

1

2

R34

4M7

1

2

R41

47k

11

B0

10

B1

9

B2

8

B3

7

B4

6

B5

5

B6

4

B7

12

CS

13

WR

3

GND

14

VDD

16

RFB

1

I_OUT1

2

I_OUT2

15

VREF

U8

AD7524N

C15

100µF

-

+

6

5

7

U6-B

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B15

HCPL2630

1

2

R42

390R

1

2

R43

1k

1

2

R44

1k

3

4

OC

U5-B

74ALS05A

-

+

2

3

1

U14-A

LM393

1

2

R45

390R

5

6

OC

U5-C

74ALS05A

9

10

8

U10-C

74LS08

12

13

11

U10-D

74LS08

J2-2

F1

1

2

3

U10-A

74LS08

4

5

6

U10-B

74LS08

C18

15nF

1

2

R46

50R

J4-1

J4-2

J4-3

1

2

R47

10k

1

2

R48

10k

1

2

R49

10k

1

2

R50

10k

1

2

R51

10k

1

2

R52

10k

D3

D6

D9

D10

J7-1

J7-2

J7-3

J7-4

J7-5

J7-6

J7-7

J7-8

J7-9

J7-10

J8-1

J8-2

J8-3

J8-4

J8-5

J8-6

J8-7

J8-8

J8-9

J8-10

C19

15nF

J8-11

J8-12

J8-13

J8-14

J8-15

J8-16

J8-17

J8-18

J8-19

J8-20

J7-11

J7-12

J7-13

J7-14

J7-15

J7-16

J7-17

J7-18

J7-19

J7-20

J5-1

J5-2

J5-3

J5-4

J5-5

J5-6

J5-7

J5-8

J5-9

J5-10

J5-11

J5-12

J5-13

J5-14

J5-15

J5-16

J5-17

J5-18

J5-19

J5-20

1

2

OC

U4-A

7417

1

2

R31

390R

1

2

JUMPER1

2P-5.08

+

C14

+

C17

4.7µF

1

2

JUM

PER2

2P-2

.54

1

2

JUM

PER3

2P-2

.54

1

2

JUM

PER4

2P-2

.54

CURRENT_SENS1

+12V_ISOLATED

+5V_ISOLATED

CURRENT_SENS2

+12V_ISOLATED

+5V_ISOLATED

+12V_ISOLATED

+5V_ISOLATED

SD

A_IS

OLATED

SCL_IS

OLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

CURRENT_SENS1_OUT

EPWM1A

EPWM1B

EPWM2A

EPWM2B

CURRENT_SENS2_OUT

EPWM1A

EPWM2A

+5V

EPWM1B

EPWM1A

EPW

M2B

EPW

M2A

EPWM3A

EPWM3B

CURRENT_SENS1_OUT

OVERCURRENT1_FAULT

OVERCURREN

T1_FAU

LT

OVERCU

RREN

T1_FAU

LT

CURRENT_SENS3

CURRENT_SENS3_OUT

EPWM3A

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PE0_TEENSY

PE1_TEENSY



CURRENT_SENS2_OUT

OVERCURRENT3_FAULT


CURRENT_SENS3_OUT


OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT3_FAULT

OVERCURRENT3_FAULT

CURRENT_SENS1

CURRENT_SENS2

CURRENT_SENS3

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PE0_TEENSY

PE1_TEENSY

SCL_ISOLATED

SDA_ISOLATED

EPWM3A

EPWM1A

EPWM2A

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

EPWM3B

CURRENT_SENS2_OUT

EPWM3A

SCL_ISOLATED

SDA_ISOLATED

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

CURRENT_SENS3_OUT

Figure 32: Mosfet driver schematic

The parameters involved in the calculations are:

Parameter name Value DescriptionVdd 12V Supply voltage of gate driverVf 0.7V Bootstrap diode forward voltage drop

Vgsmin 10V minimum gate-source saturation voltageQg 198nC Total gate chargeQls 3nC Charge required by the internal level shifter, which

is set to 3 nC for all HV gate driversIlkgs 100nA Switch gate-source leakage currentIlkcap 0nA Bootstrap capacitor leakage currentIqbs 120µA Bootstrap circuit quiescent current

Ilkdiode 10nA Bootstrap diode leakage currentIlk 50µA Bootstrap circuit leakage currentton 25µs High-side switch on time

Table 4: Bootstrap driver parameters

The total charge that needs to be supplied by the bootstrap capacitor is calcu-lated by the following equation.

Qtotal = Qg + (Ilkcap + Ilkgs + Iqbs + Ilk + Ilkdiode) · ton +Qls = 205.3nC

The voltage over the capacitor is determined by the supplied driver voltage,the voltage drop over the diode and the minimum voltage to drive the switch into

36

saturation. The voltage drop over the resistor is not relevant because it only limitsthe time in which the capacitor can be charged.

∆Vboot = Vdd − Vf − Vgsmin = 1.3V

The value of the bootstrap capacitor then is:

Cboot =Qtotal

∆Vboot= 157.9nF.

As the bootstrap resistor value 8Ω is chosen. The resistor limits the chargingcurrent of the capacitor to protect it. The RC constant for charging the capacitoris:

τ = 8Ω · 157.9nF = 1.26µs

This is the minimal time that has to be ensured to exist between the PWMpulses to allow the capacitor to charge up. With a maximum frequency of 4000Hz

even with a duty cycle of 99% there would be enough time to charge the capacitor.

1

f· (1−D) =

1

4kHz· (1− 0.99) = 2.5µs

6.1.2 IGBT Driver

The igbt module to be driven is 6MBI 100S-120. It combines a full 3 phase bridgein one package. The igbt gate charges are nearly equal to that of the mosfetdriver. Here another approach is taken from the application note AN-7004.The following parameters are considered:

• Qg = 600nC - The dynamic gate charge of the igbt.• Vgon = 12V - The gate voltage to drive the igbt in saturation.• Vgoff = 0V - The minimum voltage at which the igbt is shut off.• Rg = 12Ω - The gate resistance.• fs = 4kHz - The switching frequency.• VCE = 400V - The collector-emitter voltage.• Pdriver - Gate driver output power.• Igpeak - Gate driver peak current.The dynamic gate charge can be read from the igbt datasheet seen in figure

33 (a). At VCE = 400V we can read around 200nC. To be on the safe side we cango a bit higher on the curve. 600nC is chosen. In figure 33 (b) at Vgon = 12V wecan see that the igbt is in saturation.

37

6MBI 100S-1206-Pack IGBT

1200V6x100A

(a)

6MBI 100S-1206-Pack IGBT

1200V6x100A

(b)

Figure 33: (a)Igbt dynamic gate charge, (b VGE vs. current)

The energy needed to be transferred to the gate is:

E = Qg · (Vgon − Vgoff ) = 2nWh.

The driver output power needs to be:

Pdriver = E · fs = 0.029W.

The average gate current is:

Ig = Qg · fs = 2.4mA.

The peak gate current is:

Igpeak =Vgon − Vgoff

Rg

As an integrated solution the driver module SKYPER 32 R from Semikroncould be used to drive a pair of igbts.

38

6.2 Protection

The inverter has to be protected to ensure the safety of the people working with itand to protect the device and the motor attached to it. In any case, situations forwhich the inverter and the motor are not designed have to be avoided.Variables that need to be monitored are:

• DC battery voltage. If the DC voltage is to high it can cause the isolation ofthe switching devices to break down and destroy them.

• Switch and motor temperature. If the switches experience high tempera-tures due to inappropriate switching or too high ambient temperature theycould get damaged.

• Current. A short circuit can cause the temperature in the switches and themotor to rise rapidly, to fast for the temperature control to respond.

• Motor speed. High motor speed above the maximum rating or for longer pe-riods can heat the motor and can also present a mechanical risk to people.

The battery voltage is measured with a 10 bit ADC (Analogue to digital in-verter). The ADC is connected to the isolated I2C bus (Inter-integrated circuit).Overvoltage protection exists in the form of a RDC snubber (directional snubber)The temperature of the switches is measured by placing the heatsink of a pair ofmosfets on a SOIC (small-outline integrated circuit) 13 bit temperature sensor.The motor temperature is measured with 3 analogue sensors which are mea-sured by the C2000 launchpad’s ADCs.A fuse is placed at the positive battery terminal.

6.2.1 Short Circuit Protection

The current is measured with 3 AC sensors with an analog 5V output.Short circuit protection is implemented with logic gates. In the case of a short cir-cuit the logic will latch and will not return into operational mode without a manualfailure reset. The logic circuit is shown in figure 34. The comparator to the leftswitches it output to a logic one if the current voltage signals rises higher thanthe reference voltage at the negative input. This sets the latch (flip-flop) to a logicone. The signal is then inverted and fed to an AND gate. Thus blocking any inputfrom the PWM input to the AND gate and preventing the mosfet to be switched.

Figure 34: Short circuit protection logic circuit

39

6.2.2 RCD Snubber

<Drawn By>

<Checked By>

<QC By>

<Released By>

<Drawn Date>

<Checked Date>

<QC Date>

<Release Date>

<Company Name>

<Title>

<Code>

A1

<Drawing Number>

<Revision>

<Scale>

1

1

REV:

SIZE:

CODE:

DRAWN:

DATED:

DATED:

CHECKED:

QUALITY CONTROL:

DATED:

DATED:

RELEASED:

COMPANY:

TITLE:

DRAWING NO:

SHEET: OF

SCALE:

REVISION RECORD

A

B

C

D

DATE:

1

2

3

4

5

6

D

C

B

A

LTR

ECO NO:

APPROVED:

Temperature Sensor

HV Measuring

Bootstrap Driver

Current Measurement

Isolation

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B8

SI8503-C-IS

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U2

FAN7382

B2

B3

1

2

R7

4R7

1

2

R8

4R7

C3

150nF

1

2

R9

5R

+

C4

+

C9

+

C10

+

C11

+

C12

J2-1

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B10

HCPL2630

1

2

R1

1k

1

2

R2

1k

1

2

R3

390R

1

2

R4

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U3

FAN7382

B4

B5

1

2

R5

4R7

1

2

R6

4R7

C5

150nF

1

2

R10

5R

+

C6

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B6

HCPL2630

1

2

R11

1k

1

2

R12

1k

1

2

R13

390R

1

2

R14

390R

1

VCC

2

HIN

3

LIN

4

COM

8

VB

7

HO

6

VS

5

LO

U7

FAN7382

B7

B13

1

2

R15

4R7

1

2

R16

4R7

C7

150nF

1

2

R17

5R

+

C8

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B14

HCPL2630

1

2

R18

1k

1

2

R19

1k

1

2

R20

390R

1

2

R21

390R

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B12

SE95

1

2

R29

996k5

1

2

R30

46k9

1

2

R33

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B21

SE95

1

2

R36

10k

1

SDA

2

SCL

3

OS

4

GND

8

VCC

7

A0

6

A1

5

A2

B25

SE95

1

2

R39

10k

1

2

R40

10k

1

VD

D

2

VSS

3

AIN

5

SCL

4

SD

A

AD

C1

MCP3021A5T

J1-1

J1-2

J1-3

J1-4

J1-5

J1-6

J1-7

J1-8

J1-9

J1-10

J1-11

J1-12

J1-13

J1-14

J1-15

J1-16

J1-17

J1-18

J1-19

J1-20

J3-1

J3-2

J3-3

J3-4

J3-5

J3-6

J3-7

J3-8

J3-9

J3-10

J3-11

J3-12

J3-13

J3-14

J3-15

J3-16

J3-17

J3-18

J3-19

J3-20

C1

100nF

+

C2

1

2

R22

4M7

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B1

SI8503-C-IS

C13

100nF

1

2

R23

4M7

D1

D2

D4

D5

D7

D8

1

2

R24

10k

1

2

R25

47k

J6-1

J6-2

J6-3

J6-4

J6-5

J6-6

J6-7

J6-8

J6-9

J6-10

J6-11

J6-12

J6-13

J6-14

J6-15

J6-16

J6-17

J6-18

J6-19

J6-20

3

4

OC

U1-B

7417

5

6

OC

U1-C

7417

9

8

OC

U1-D

7417

11

10

OC

U1-E

7417

13

12

OC

U1-F

7417

1

2

OC

U1-A

7417

-

+

2

3

1

U6-A

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B9

HCPL2630

1

2

R26

390R

1

2

R27

1k

1

1R

2

1S1

3

1S2

4

1Q

5

2R

6

2S

7

2Q

8

GND

16

VCC

15

4S

14

4R

13

4Q

12

3S1

11

3S2

10

3R

9

3Q

LATCH1

SN54LS279AN

1

2

R28

1k

1

2

OC

U5-A

74ALS05A

1

2

3

U9-A

74LS08

4

5

6

U9-B

74LS08

1

VDD1

2

VDD2

3

R1

4

R2

5

GND2

6

GND3

7

OUT

8

NC

9

TRST

10

GND1

20

IIN

19

IIN

18

IIN

17

IIN

16

IIN

15

IOUT

14

IOUT

13

IOUT

12

IOUT

11

IOUT

B11

SI8503-C-IS

C16

100nF

1

2

R34

4M7

1

2

R41

47k

11

B0

10

B1

9

B2

8

B3

7

B4

6

B5

5

B6

4

B7

12

CS

13

WR

3

GND

14

VDD

16

RFB

1

I_OUT1

2

I_OUT2

15

VREF

U8

AD7524N

C15

100µF

-

+

6

5

7

U6-B

LM393

VF1

VF2

1

+

2

-

3

-

4

+

8

VCC

7

VO1

6

VO2

5

GND

B15

HCPL2630

1

2

R42

390R

1

2

R43

1k

1

2

R44

1k

3

4

OC

U5-B

74ALS05A

-

+

2

3

1

U14-A

LM393

1

2

R45

390R

5

6

OC

U5-C

74ALS05A

9

10

8

U10-C

74LS08

12

13

11

U10-D

74LS08

J2-2

F1

1

2

3

U10-A

74LS08

4

5

6

U10-B

74LS08

C18

15nF

1

2

R46

50R

J4-1

J4-2

J4-3

1

2

R47

10k

1

2

R48

10k

1

2

R49

10k

1

2

R50

10k

1

2

R51

10k

1

2

R52

10k

D3

D6

D9

D10

J7-1

J7-2

J7-3

J7-4

J7-5

J7-6

J7-7

J7-8

J7-9

J7-10

J8-1

J8-2

J8-3

J8-4

J8-5

J8-6

J8-7

J8-8

J8-9

J8-10

C19

15nF

J8-11

J8-12

J8-13

J8-14

J8-15

J8-16

J8-17

J8-18

J8-19

J8-20

J7-11

J7-12

J7-13

J7-14

J7-15

J7-16

J7-17

J7-18

J7-19

J7-20

J5-1

J5-2

J5-3

J5-4

J5-5

J5-6

J5-7

J5-8

J5-9

J5-10

J5-11

J5-12

J5-13

J5-14

J5-15

J5-16

J5-17

J5-18

J5-19

J5-20

1

2

OC

U4-A

7417

1

2

R31

390R

1

2

JUMPER1

2P-5.08

+

C14

+

C17

4.7µF

1

2

JUM

PER2

2P-2

.54

1

2

JUM

PER3

2P-2

.54

1

2

JUM

PER4

2P-2

.54

CURRENT_SENS1

+12V_ISOLATED

+5V_ISOLATED

CURRENT_SENS2

+12V_ISOLATED

+5V_ISOLATED

+12V_ISOLATED

+5V_ISOLATED

SD

A_IS

OLATED

SCL_IS

OLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

SDA_ISOLATED

SCL_ISOLATED

TEMP_OS_ISOLATED

CURRENT_SENS1_OUT

EPWM1A

EPWM1B

EPWM2A

EPWM2B

CURRENT_SENS2_OUT

EPWM1A

EPWM2A

+5V

EPWM1B

EPWM1A

EPW

M2B

EPW

M2A

EPWM3A

EPWM3B

CURRENT_SENS1_OUT

OVERCURRENT1_FAULT

OVERCU

RREN

T1_FAU

LT

OVERCU

RREN

T1_FAU

LT

CURRENT_SENS3

CURRENT_SENS3_OUT

EPWM3A

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PE0_TEENSY

PE1_TEENSY



CURRENT_SENS2_OUT

OVERCURRENT3_FAULT


CURRENT_SENS3_OUT


OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT2_FAULT

OVERCURRENT3_FAULT

OVERCURRENT3_FAULT

CURRENT_SENS1

CURRENT_SENS2

CURRENT_SENS3

PC3_TEENSY

PC4_TEENSY

PC5_TEENSY

PC6_TEENSY

PC7_TEENSY

PC0_TEENSY

PC1_TEENSY

PC2_TEENSY

PE0_TEENSY

PE1_TEENSY

SCL_ISOLATED

SDA_ISOLATED

EPWM3A

EPWM1A

EPWM2A

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

EPWM3B

CURRENT_SENS2_OUT

EPWM3A

SCL_ISOLATED

SDA_ISOLATED

TEMP_OS_ISOLATED


CURRENT_SENS1_OUT

CURRENT_SENS3_OUT

Figure 35: RCD snub-ber circuit

In figure 35 the RCD snubber circuit can be seen.To design it the following parameters are consid-ered:

• Vpeak = 100V - The estimated flyback voltage isaround 2 times the battery’s voltage.

• Ipeak = 20A - maximum estimated bleeding resis-tor current

• Coss = 2340pF - IXFH-FK170N10P• Cmount = 500pF - IXFH-FK170N10P• fs = 4kHz - maximum switching frequencyA safe value for the snubber capacitance is 2 times

the total gate capacitance. Because there are 2 activeswitching paths at all times this value can be doubled.

Cs = 2 · 2 · (Coss + Cmount) = 11.36nF

A standard value for Cs of 15nF is used.Energy to be dissipated in the capacitor is:

ERs =Cs · V 2

peak

2= 15.78nWh.

The average power dissipation in Rso at given frequency is:

PRs = Cs · V 2peak · fs = 0.454W.

The value for Rs is:

Rs =VpeakIpeak

= 5Ω.

40

6.3 Microcontroller

Figure 36: C2000 Launchpad

As the motorcontroller the C2000Launchpad from Texas Instruments isused. The microcontroller itself on theboard is Piccolo TMS320F28027. Itwas chosen because of its capabil-ity to run complex control algorithmslike field oriented control at a low cost.The board costs around 14 e(May2013). Ready made libraries are avail-able that provide basic tools for mo-tor control. This makes the softwaredevelopment comparatively easy andsaves time.

6.4 Sensors

6.4.1 Temperature Sensors

Figure 37: TemperatureSensor SE95DP fromNXP

As a temperature sensor SE95DP from NXP is used.It communicates via I2C and has a temperature accu-racy of ±1°C at 13-bit resolution. 6 of these sensorsare placed beneath the IGBT module. 3 of these sen-sors are used to sense the temperature of the mosfetmodules, one sensor for each pair.

6.4.2 Current Sensors

Figure 38: CurrentSensor HAIS-50-Pand HAIS-100-P fromLEM used for currentmeasurement.

For the low power version, which uses MOSFETswitches, a shunt resistor will be used to measure thecurrent to keep the price low. For the high power ver-sion, which uses IGBT switches, closed loop Hall effectsensor will be used to measure the current with a goodlinearity over a wide range. One sensor measures theDC input current from the battery. Two other sensorsmeasure the AC phase currents ia and ib. ic can be cal-culated from those two phase currents. To avoid longmeasuring wires the sensors are placed directly at the housing, where the wire

41

is being fed through the cable gland. There the measurement contacts are con-nected closely to the measuring microcontroller. The DC leading cable comingfrom the battery pack has a wire size of 16mm2 and a diameter of 10.2mm. Thewire size has to be considered to fit through the sensing hole. A too tight fit mightdamage the sensor.

6.4.3 Voltage Sensor

The DC battery voltage is measured using a 10 bit ADC inverter which is con-nected to the I2C bus. A voltage divider is used to reduce the measured voltageto 5V maximum.

42

7 Measurements

7.1 Voltage Divider Resistance

Figure 39: Measurement setup

In figure 39 the measurement setup for measuring the true resistor valuesfor the voltage divider can be seen. This voltage divider is used to measure theDC voltage of the battery. When the dc voltage is applied current will heat up theresistors and change their value. To get good measurements the voltage drop andcurrent are separately measured over a range of voltages. A couple of minuteswere waited to allow to values to settle. In figure 40 and table 5 the results canbe seen. A linear regression gives the values for the resistors.

43

Figure 40: Linear regression of resistance value

V [V ] V 1[V ](calc.) V 2[V ] I[µA]

97.60 93.23 4.37 103.50

89.80 85.78 4.02 95.25

80.00 76.42 3.58 84.90

70.00 66.87 3.13 74.20

59.90 57.21 2.688 63.60

50.00 47.76 2.241 53.00

40.00 38.21 1.793 42.40

30.10 28.75 1.350 31.90

19.98 19.08 0.895 21.10

10.00 9.55 0.448 10.60

5.00 4.78 0.224 5.30

R1 lin.reg.[kΩ] R2 lin.reg.[kΩ]900.500 4.22

Table 5: Resistance measurement results

44

7.2 Inverter

The generated PWM is filtered using a RC low pass filter with R = 50kΩ andC = 8nF .

Figure 41: PWM at 4000 Hz

In figure 41 the generated sinusoidal PWM by the microcontroller can be seen.A lookup table with 12 lookup points is used resulting in the waveform in figure42.

Figure 42: Sine wave 166 Hz with 12 lookup points

45

Figure 43: PWM at 25000 Hz

In figure 43 the generated sinusoidal PWM by the microcontroller can be seen.A lookup table with 42 lookup points is used resulting in the waveform in figure44.

Figure 44: Sine wave 285 Hz with 42 lookup points

46

8 Program

Teensy(I2C Master)

TI C2000Launchpad

Can Bus Controller

Temperature Sensor x3

I2C Communication BusGalvanic isolation

DC Voltage Sensor x1

Mosfet Switches

SPI B

us

Resolver Signal

SPI Bus

Battery

AC Motor

AC Current Sensor x3

ADC Input

GalvanicIsolation

Mosfet Driver with Overcurrent Protection

Figure 45: System communication overview

In figure 45 you can see a system overview of the inverter. The systems inblue are the parts that need to be programmed. Until now the CAN bus com-munication using SPI has been programmed. The I2C communication with thetemperature sensors has been programmed but not successfully tested. Usingthe C2000 launchpad the sinusoidal PWM has been programmed to work in astationary state.The control loop has still to be implemented. The resolver information via SPIhas to be programmed. The I2C routine to read the DC voltage has to be pro-grammed.

47

9 Summary and Conclusion

In this thesis the theory of controlling a permanent magnet synchronous motorshas been introduced. The control loop of the inverter was shown and direct torquecontrol and field oriented control were discussed. A low voltage mosfet inverterwas built. The sinusoidal pulse width modulation was programmed and tested.Most of the parts of a inverter were discussed. Ways to design and calculate adriver for a mosfet or igbt were shown. The components used in the project weremostly taken from the inventory of the university’s laboratory. Thus the cost waskept lower than 150 e.

As an outline into the future of this project the following points are considered.The control equations to design a PI controller have to be discussed.The low voltage mosfet inverter has to be further tested and programmed.A field oriented control can then be implemented and tested on a low voltage in-verter.The low voltage mosfet inverter was mostly built with through hole components.To keep parasitic capacitances and inductances as low as possible the final in-verter should be designed using small outline components.

48

List of Figures

1 Formula Student logos . . . . . . . . . . . . . . . . . . . . . . . . . 32 Metropolia Motorsport logo . . . . . . . . . . . . . . . . . . . . . . 33 System Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Taxonomy of AC motors . . . . . . . . . . . . . . . . . . . . . . . . 65 (a) Continuous Counter EMF of a PMSM, (b) Trapezoidal Counter

EMF of a BLDC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Typical PMSM structures: (a) surface magnet, (b) inset magnet,

(c) pole shoe rotor, (d) tangentially embedded magnets, (e) radiallyembedded magnets (flux-concentration), (f) two magnets per polein the V position, (g) a synchronous reluctance motor equippedwith permanent magnets.[8, p. 397] . . . . . . . . . . . . . . . . . 8

7 Structure of the Metropolia Motorsport’s motor: interior magnet . . 98 Simplified equivalent circuit of a 3 Phase AC motor. . . . . . . . . . 119 Stationary equivalent circuit of a PMSM (one phase) . . . . . . . . 1210 Square wave conversion . . . . . . . . . . . . . . . . . . . . . . . . 1511 Square wave amplitude spectrum . . . . . . . . . . . . . . . . . . . 1612 Modified sine wave conversion . . . . . . . . . . . . . . . . . . . . 1613 Modified sine wave amplitude spectrum . . . . . . . . . . . . . . . 1714 Simulated PWM signal for a pure sine wave . . . . . . . . . . . . . 1715 Simulated PWM signal for a pure sine wave amplitude spectrum . 1816 Stationary frame of the three phases abc with overlayed stationary

α,β frame (a), Space dector diagram (b) . . . . . . . . . . . . . . . 1917 Space vector synthesizing . . . . . . . . . . . . . . . . . . . . . . . 1918 Control loop overview . . . . . . . . . . . . . . . . . . . . . . . . . 2119 Clarke and Park transformation [7, p. 9] . . . . . . . . . . . . . . . 2320 (a) Equivalent MOSFET representation including junction capaci-

tances; and (b) representation of this physical location.[9, p. 83] . . 2421 The IGBT (a) half-cell vertical cross section and equivalent circuit

model[9, p. 102], (b) IGBT capacitances . . . . . . . . . . . . . . . 2522 (a) Simplified gate charge waveforms, (b) Gate charge character-

istic [5, p. 2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2623 Matlab simulation of space vector pwm . . . . . . . . . . . . . . . . 2724 Power supply schematic . . . . . . . . . . . . . . . . . . . . . . . . 2825 Teensy2++ schematic . . . . . . . . . . . . . . . . . . . . . . . . . 2926 C2000 launchpad schematic . . . . . . . . . . . . . . . . . . . . . 2927 Optocoupler module schematic . . . . . . . . . . . . . . . . . . . . 3028 CAN bus module schematic . . . . . . . . . . . . . . . . . . . . . . 30

49

29 Mosfet inverter module schematic . . . . . . . . . . . . . . . . . . 3130 Resolver to digital converter module schematic . . . . . . . . . . . 3231 Modules of the mosfet inverter . . . . . . . . . . . . . . . . . . . . 3332 Mosfet driver schematic . . . . . . . . . . . . . . . . . . . . . . . . 3533 (a)Igbt dynamic gate charge, (b VGE vs. current) . . . . . . . . . . 3734 Short circuit protection logic circuit . . . . . . . . . . . . . . . . . . 3835 RCD snubber circuit . . . . . . . . . . . . . . . . . . . . . . . . . . 3936 C2000 Launchpad . . . . . . . . . . . . . . . . . . . . . . . . . . . 4037 Temperature Sensor SE95DP from NXP . . . . . . . . . . . . . . . 4038 Current Sensor HAIS-50-P and HAIS-100-P from LEM used for

current measurement. . . . . . . . . . . . . . . . . . . . . . . . . . 4039 Measurement setup . . . . . . . . . . . . . . . . . . . . . . . . . . 4240 Linear regression of resistance value . . . . . . . . . . . . . . . . . 4341 PWM at 4000 Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4442 Sine wave 166 Hz with 12 lookup points . . . . . . . . . . . . . . . 4443 PWM at 25000 Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . 4544 Sine wave 285 Hz with 42 lookup points . . . . . . . . . . . . . . . 4545 System communication overview . . . . . . . . . . . . . . . . . . . 46

50

List of Tables

1 PMSM parameter overview . . . . . . . . . . . . . . . . . . . . . . 102 PMSM dynamic equations[4, p. 154] . . . . . . . . . . . . . . . . . 133 Comparison between DTC and FOC . . . . . . . . . . . . . . . . . 224 Bootstrap driver parameters . . . . . . . . . . . . . . . . . . . . . . 355 Resistance measurement results . . . . . . . . . . . . . . . . . . . 43

51

References

[1] Metropolia Motorsport Team History, 2013. http://

metropolia-motorsport.fi/team/team-history/; accessed 20.05.2013.

[2] Zsolt Borkai. About FSHungary, 2012. http://fshungary.hu/

about-fshungary; accessed 20.05.2013.

[3] Rolf Fischer. Elektrische Maschinen 15. edition. HANSER, Munchen, 2011.

[4] Kwang Hee Nam. AC Motor Control and Electric Vehivle Applications. CRCPress, New York, 2010.

[5] Markus Hermwille. Igbt driver calculation. Technical report, Semicron,2007. http://www.semikron.com/skcompub/en/AN-7004_IGBT_Driver_

Calculation_rev00.pdf.

[6] SAE International. 2013 Formula SAE Rules, 2012. http://students.sae.org/competitions/formulaseries/rules/2013fsaerules.pdf.

[7] Microsemi. Field oriented control of permanent magnet synchronous motors.Technical report, Microsemi Cooperation, 2012. http://www.actel.com/

documents/SF_FOC_PMSM_HALL_UG.pdf.

[8] J. Pyrhonen, T. Jokinen, and V. Hrabovcova. Design of Rotating ElectricalMaschines. Wiley, Chichester, UK, 2008.

[9] Muhammad H. Rashid. Power Electronics Handbook. Academic Press,2001.

[10] Wikipedia. Direct torque control, June 2013. http://en.wikipedia.org/

wiki/Direct_torque_control.

http://metropolia-motorsport.fi/team/team-history/

http://metropolia-motorsport.fi/team/team-history/

http://fshungary.hu/about-fshungary

http://fshungary.hu/about-fshungary

http://www.semikron.com/skcompub/en/AN-7004_IGBT_Driver_Calculation_rev00.pdf

http://www.semikron.com/skcompub/en/AN-7004_IGBT_Driver_Calculation_rev00.pdf

http://students.sae.org/competitions/formulaseries/rules/2013fsaerules.pdf

http://students.sae.org/competitions/formulaseries/rules/2013fsaerules.pdf

http://www.actel.com/documents/SF_FOC_PMSM_HALL_UG.pdf

http://www.actel.com/documents/SF_FOC_PMSM_HALL_UG.pdf

http://en.wikipedia.org/wiki/Direct_torque_control

http://en.wikipedia.org/wiki/Direct_torque_control

52

A Matlab Code

A.1 Matlab code for square wave generation

freq = 1; % Base Frequency

fs=freq*1000; % Sampling frequency

A = 1; % Amplitude

t = 0:1/fs:32/freq;

y = A* square(2*pi*freq*t);

figure(1);

clf(1,'reset');

plot(t,y);

axis([0 2/freq −1.2*A 1.5*A]);

xlabel('Time [s]');

ylabel('Voltage[V]');

title('SquareWave');

set(gcf,'color','w'); %set background to white

%set(gca,'XTick',0:pi/4:2*pi)

%set(gca,'XTickLabel','0','pi/4','pi/2','3/4pi','pi','5/4pi','6/4pi...','7/4pi','2pi')

% Fast Fourier Transform of Square Wave

L = length(y); %Length of Signal

NFFT = 2ˆnextpow2(L); % Next power of 2 from length of signal => FFT...

length

FFT = fft(y,NFFT)/L;

%FFT is symmetric => through away second half

FFT=FFT(1:NFFT/2+1); %+1 ?

%Take the magnitude of FFT

mFFT=2*abs(FFT);

%create frequence vector

f = fs/2*linspace(0,1,NFFT/2+1);%(0:NFFT/2−1)*fs/NFFT;

% Plot single−sided amplitude spectrum.

figure(2);

clf(2,'reset');

plot(f,mFFT);

title('Amplitude Spectrum of SquareWave');

xlabel('Frequency [Hz]');

ylabel(' |Voltage[V] |');set(gcf,'color','w');%set background to white

axis([0 10*freq 0 1.2*A]);

53

A.2 Matlab code for modified sine wave generation

clf(1,'reset');

clf(2,'reset');

freq = 1; % Base Frequency

fs=freq*10000; % Sampling frequency

A = 1; % Amplitude

n= 20; %n Periods

%D = [2.5 10 17.5 20]' * 1/freq; % pulse delay times

D= 0.25*1/freq:1/freq:n/freq;

D2=0.75*1/freq:1/freq:n/freq;

t = 0 : 1/fs : n/freq; % signal evaluation time

w = 0.25*1/freq; % width of each pulse

y = A*(pulstran(t,D,'rectpuls',w)−pulstran(t,D2,'rectpuls',w));

figure(1);

plot(t,y);

axis([0 2/freq −1.2*A 1.2*A]);

xlabel('Time [s]');

ylabel('Voltage[V]');

title('Modified Sinus Wave');


% Fast Fourier Transform of Square Wave



length



FFT=FFT(1:NFFT/2+1); %+1 ?


mFFT=2*abs(FFT);




figure(2);

plot(f,mFFT);

title('Amplitude Spectrum of Modified Sine Wave');



axis([0 10*freq 0 A]);

54

A.3 Matlab code for pure sine wave generation

sinfreq = 1;% Base Frequency

fs = sinfreq*10000; %sampling frequency

fc = 20; %carrying frequency

A=1; %Amplitude

t = 0:1/fs:32/sinfreq;

desired pos signal = A*sin(2*pi*sinfreq*t);

carrying signal = A*sawtooth(2*pi*fc*t,0.5);

desired vel signal = zeros(size(desired pos signal));

desired vel signal = sign(diff(desired pos signal));

PWM = zeros(size(desired pos signal)); %fill PWM with zeros

figure(1)

clf(1,'reset');

plot(t,carrying signal,'g');

hold on

for k= 1:length(desired pos signal)

if carrying signal(k) > desired pos signal(k)

PWM(k)=−1;elseif carrying signal(k) < desired pos signal(k)

PWM(k)=1;

end

end

plot(t,desired pos signal)

hold on

plot(t,PWM,'r')

title('Pure Sine Wave PWM switching');

xlabel('Time [s]');

ylabel(' |Voltage[V] |');axis([0 1 −1.2 1.2]);


annotation('textbox',...

[0.001 0.817 0.095 0.072],...

'String','Vdc',...'LineStyle','none');

annotation('textbox',...

[0.001 0.49 0.095 0.072],...

'String','Vdc/2',...'LineStyle','none');

y = PWM;

% Fast Fourier Transform

55



length



FFT=FFT(1:NFFT/2+1); %+1 ?


mFFT=2*abs(FFT);




figure(2);

clf(2,'reset');

plot(f,mFFT);

title('Amplitude Spectrum of sine wave');



axis([0 100*sinfreq 0 A]);

56

A.4 Matlab code for space vector PWM

function [S1,S2,S3,S4,S5,S6,sector,t1]=fcn(vd e,vq e,ramptime,...

theta e,Ts,Vdc)

S1=3;S2=3;S3=3;S4=3;S5=3;S6=3; %switching fault state values

%transform from synchronous into stationary frame

vd s=cos(theta e)*vd e−sin(theta e)*vd e;

vq s=sin(theta e)*vq e+cos(theta e)*vq e;

%find sector number in hexagon

if(vq s > 0)

if(abs(vq s) > (sqrt(3)*abs(vd s)) )

sector=2;

elseif(vd s > 0)

sector=1;

else

sector=3;

end;

elseif(abs(vq s) > (sqrt(3)*abs(vd s)))

sector=5;

elseif(vd s > 0)

sector=6;

else

sector=4;

end;

%calculate T1,T2 duties for each sector to generate relation between...

d,q

T1=sqrt(3)*Ts/(Vdc)*(sin(pi/3*sector)*vd s−cos(pi/3*sector)*vq s);

T2=sqrt(3)*Ts/(Vdc)*(−sin(pi/3*(sector−1))*vd s+cos(pi/3*(sector−1)...)*vq s);

T0 =Ts−(T1+T2);t1=[T0/4 T1 T2 T0/4 T0/4 T2 T1 T0/4];t1=cumsum(t1);

%sector I

if(sector==1)

pwmS1=[0 1 1 1 1 1 1 0];pwmS3=[0 0 1 1 1 1 0 0];pwmS5=[0 0 0 1 1...

0 0 0];

pwmS4=[1 0 0 0 0 0 0 1];pwmS6=[1 1 0 0 0 0 1 1];pwmS2=[1 1 1 0 0...

1 1 1];

for j=1:8

if(ramptime<t1(j))

57

break;

end;

end;

S1=pwmS1(j);S3=pwmS3(j);S5=pwmS5(j);


end;

% sector II

if(sector==2)

pwmS1=[0 0 1 1 1 1 0 0];pwmS3=[0 1 1 1 1 1 1 0];pwmS5=[0 0 0 1 1...

0 0 0];

pwmS4=[1 1 0 0 0 0 1 1];pwmS6=[1 0 0 0 0 0 0 1];pwmS2=[1 1 1 0 0...

1 1 1];

for j=1:8

if(ramptime<t1(j))

break;

end;

end;



end;

%sector III

if(sector==3)

pwmS1=[0 0 0 1 1 0 0 0];pwmS3=[0 1 1 1 1 1 1 0];pwmS5=[0 0 1 1 1...

1 0 0];

pwmS4=[1 1 1 0 0 1 1 1];pwmS6=[1 0 0 0 0 0 0 1];pwmS2=[1 1 0 0 0...

0 1 1];

for j=1:8

if(ramptime<t1(j))

break;

end;

end;



end;

%sector IV

if(sector==4)

pwmS1=[0 0 0 1 1 0 0 0];pwmS3=[0 0 1 1 1 1 0 0];pwmS5=[0 1 1 1 1...

1 1 0];

pwmS4=[1 1 1 0 0 1 1 1];pwmS6=[1 1 0 0 0 0 1 1];pwmS2=[1 0 0 0 0...

0 0 1];

58

for j=1:8

if(ramptime<t1(j))

break;

end;

end;



end;

% sector V

if(sector==5)

pwmS1=[0 0 1 1 1 1 0 0];pwmS3=[0 0 0 1 1 0 0 0];pwmS5=[0 1 1 1 1...

1 1 0];

pwmS4=[1 1 0 0 0 0 1 1];pwmS6=[1 1 1 0 0 1 1 1];pwmS2=[1 0 0 0 0...

0 0 1];

for j=1:8

if(ramptime<t1(j))

break;

end;

end;



end;

%Sector VI

if(sector==6)

pwmS1=[0 1 1 1 1 1 1 0];pwmS3=[0 0 0 1 1 0 0 0];pwmS5=[0 0 1 1 1...

1 0 0];

pwmS4=[1 0 0 0 0 0 0 1];pwmS6=[1 1 1 0 0 1 1 1];pwmS2=[1 1 0 0 0...

0 1 1];

for j=1:8

if(ramptime<t1(j))

break;

end;

end;



end;

Documents

Designing a Three Phase Inverter for a Permanent Magnet