Design of 5V@4A Adaptor with INN2125K (InnoSwitch-CE) · PDF fileAmbient Temprature T AMB ... Measurment Point Input:90Vac Load:4.0A Input:264Vac Load:4.0A ... 4 Winding (Transformer)

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Design of 5V@4A Adaptor with

INN2125K (InnoSwitch-CE)

RL – PI China Office

6 Nov, 2015 (Rev-1)


• Integrated-Secondary Side Regulation for Fast DLR;

• Complete System and Output Protections (SCP, OPP, OCP, OVP, OTP);

• Build in Secondary Sync-Rectification; Efficiency Ratings exceeded DoE &

CoC_v5.0;

• Exceptional CV/CC accuracy independent of transformer design or external

components tolerances.

Design Features :


1. Power Supply Specification

Description Symbol Min Typ Max Units Comment/Conditions

Voltage VIN

90 265 VAC 2 Wire no P.E.

Frequency fLINE

47 50/60 63 Hz

No-load Input Power PIN

30 mW Input 230 VAC

Output Voltage VOUT

4.75 5.0 5.25 V Measured at the End of cable

Output Current IOUT

4 A

Output Ripple Voltage VRIPPLE 100 mVP-P Measured at the End of cable, 20 MHz Bandw idth

Total Output Power

Continuous Output Power POUT 20 W

Peak Output Power POUT_PK W

Conducted EMI Margin 6 dB CISPR22B/EN55022 class B

Average Efficiency η 83.1 % measure at PCB end

Ambient Temprature TAMB

0 40 Free convection, sea level

Surge Test kV Differential Mode:2ΩΩ

ESD(Air Discharge) kV On each output terminals; +/-Ω

Safety

OUTPUT

INPUT

Designed to meet IEC950,

UL1950 Class II


2. Schematic

EC3

10uF400 V

L2

300uH

R5

300K

5V Output

Ilimit = 950mA

CY1 470pF

R9

47R

C160.1uF

EC4

10uF400 V

R347R

C7 2.2nFUSB1

2

4

1

3

C3

10uF

C8

2.2uF

C17

1000uF

6.3V

D3 SS1060FL

D4

RS

1M

L

R447R

C8

1000uF

6.3V

T1RM8

D2M7

S

D

BP

FW

D

SR

/P

BP

S

VO

GN

D

FB

ISU1

INN2125

R11

91KR7 10R

C61nF1KV

-+

BD1

ABS210

Q1 AO4260R10 30K

F1

T2L

/25

0V

N

LF3

25uH

L

EC1

10uF

400 V

t

RT15D-7

EC2

10uF400 V R2

22R

R16.8K D1

12V

R1713mR

R1913mR

USB2

2

4

1

3


3. BOM

I tem Qty C/C Reference Des cription

1 1 BD1 ABS210, 2A 1000V Rectifier, ABS

2 1 C16 100nF,16V, Cera mic, X7R, 0805

3 1 C3 10uF,25V, 1206

4 1 C6 1nF,250V,Cera mic,X7R,0805

5 1 CY1 Y-Ca p,Y1,470pF

6 1 D2 S1ML,Recti fier,1A, 1000V, SOD-123

7 1 D4 RS1DL,Fa st Recovery,0.8A, 200V, SOD-123

8 4 EC1,EC2,EC3,EC4 10uF,400 V, Electrolyti c, (8X12)

9 1 F1 2A 250V,Time-la g Fus e

10 1 L1 25uH,Common choke, 0.2mm, 9T, T6*3*2 Core

11 1 LF3 300uH,Axia l , I-Core, 6 x 10

12 1 PCB FR-4

13 1 R1 6.8K,5%,Thick Fi lm,0603

14 1 R2 51R,5%,Thick Fi lm, 1206

15 2 R3,R4 300K,5%,Thick Fi lm, 1206

16 1 R5 22R,5%,Thick Fi lm,0603

17 1 RT1 NTC,5D-7

18 1 T1 RM8,6+6Pin

19 1U1

SC2125K, eSOP-R16B (or K-package), I-Limi t =

950mA, 100kHz

20 1 ZD1 12V, 5%, Zenner, SOD-80

23

Primary Side Components

Item Qty C/C ReferenceDes cription

1 2 EC8, EC171000uF,6.3V, Sol id Ca p, (8X11.5)

2 1 C8 2.2uF,16V, Cera mic, X5R, 0805

3 1 C7 2.2nF,100V, Cera mic, X7R, 0805

4 1 R11 91K,1%,Thi ck Fi lm,0603

5 1 R10 30K,1%,Thi ck Fi lm,0603

6 1 R9 47R,5%,Thick Fi lm,0603

7 1 R7 10R,5%,Thick Fi lm,0805

8 2 R17,R19 13mR,1%,metal s tri p type,0805

9 1 D3 SS1060FL,60V,1A,Schottky,SOD-123

10 1 Q1 AO4260, Mos fet, 60V,18A,6.3mR, SO-8

12

Secondary Side Components


4. Demo Board

SC2125K (U1)

AO4260(SR FET, Q1)

(Component height on the PCB surface is 18mm)


5. Transformer DesignSCHEMATIC

MATERIALS:

1. Core : RM8 (TDK PC95 or equivalent, Ae = 64mm2)

2. Bobbin : RM8 (6+6pin).

3. Magnet Wires (Primary) : Type 2-UEW

4. Magnet Wire (Secondary) : Triple Insulated Wires

ELECTRICAL SPECIFICATIONS:

1. Primary Inductance (Lp) = 690uH ± 7% @ 10KHz

2. Primary Leakage Inductance < 20uH

3. Electrical Strength = 3KV, 50/60Hz,1Min

FINISHED :

1. Varnish the assembly completely

Wire started in clockwise direction from pin-2 and ended at pin-11 when

looking from the bottom side of the bobbin in a “Clockwise” Direction.

Triple Insulated Wire （Clockwise)0.55 mmx3__3T – Secondary

2UEW 0.4 mmx1__19.5T – Primary (Clockwise)2(S)

A(S)

TOP

2T Tape

2T Tape

BOTTOM

5(S) 2UEW 0.25 mmx5__6T – Bias (Clockwise)

4(F)

7(F)1T Tape

2UEW 0.4 mmx1__18.5T – Primary (Clockwise)

B(F)

7(S)

1(F)2T Tape

X(S) 2UEW 0.25 mmx6__4T – Shield (Clockwise)

1T Tape1(F)

Secondary

3T

B

A

Primary

38T

5Bias

6T

Shield

4T

4

1

x

2

1

719.5T

18.5T

Note: Core is connected to PIN-1

2 1

45

11


6a. Regulation, Ripple, EfficiencyNote: Output voltage is measured between Output E-Cap (+) and INNO’s (Is) – To eliminate voltage drop induced by USB connector.

VIN PIN VOUT IOUT VRIPPLE POUT η Average DOE

(VAC) (W) on PCB(V) (mA) (mVP-P) (W) (%) η(%) η (%)

0.007 5.01 0 15

23.470 5.18 4000 30 20.72 88.28

17.480 5.15 3000 66 15.44 88.34

11.530 5.11 2000 82 10.21 88.55

5.708 5.06 1000 80 5.06 88.65

0.007 5.01 0 20

23.330 5.18 4000 32 20.72 88.81

17.350 5.15 3000 62 15.45 89.05

11.440 5.11 2000 66 10.21 89.28

5.670 5.06 1000 74 5.06 89.24

0.011 5.01 0 18 0 0

23.440 5.20 4000 30 20.78 88.67

17.400 5.15 3000 64 15.45 88.79

11.470 5.11 2000 72 10.22 89.10

5.685 5.06 1000 72 5.06 89.01

0.013 5.01 0 20 0 0

23.530 5.20 4000 36 20.78 88.33

17.490 5.15 3000 66 15.45 88.34

11.530 5.11 2000 74 10.22 88.64

5.710 5.07 1000 60 5.07 88.70

264

90

230

115

83.08

88.45

88.89

89.10

88.50


6.b Regulation, Ripple, EfficiencyNote: Output voltage is measured on USB ends (Connect both USBs in parallel).

VIN PIN VOUT IOUT VRIPPLE POUT η Average DOE

(VAC) (W) on PCB(V) (mA) (mVP-P) (W) (%) η(%) η (%)

0.007 5.01 0 15

23.500 5.11 4000 30 20.44 86.98

17.460 5.10 3000 66 15.29 87.54

11.520 5.07 2000 82 10.14 88.02

5.695 5.05 1000 80 5.05 88.60

0.007 5.01 0 20

23.330 5.12 4000 32 20.48 87.78

17.350 5.10 3000 62 15.30 88.18

11.450 5.07 2000 66 10.14 88.56

5.666 5.05 1000 74 5.05 89.08

0.011 5.01 0 18 0 0

23.440 5.13 4000 30 20.52 87.54

17.400 5.10 3000 64 15.30 87.93

11.480 5.08 2000 72 10.16 88.50

5.690 5.05 1000 72 5.05 88.73

0.013 5.01 0 20 0 0

23.530 5.13 4000 36 20.53 87.24

17.470 5.10 3000 66 15.30 87.58

11.530 5.08 2000 74 10.16 88.08

5.720 5.05 1000 60 5.05 88.29

83.08

87.79

88.18

88.40

87.80264

90

230

115


7. Dynamic Load Response (measured on PCB end)

CH1: Output Voltage, 1V/Div,

CH4: Output Current, 2A/Div

Test Conditions:

1. AC input = 90VAC

2. Load range: 0A-4.0A-0A

3. Frequency: 100Hz(5ms/5ms)

4. Slew rate: 0.5A/uS

CH1: Output Voltage, 1V/Div,

CH4: Output Current, 2A/Div

Test Conditions:

1. AC input = 264VAC

2. Load range: 0A-4.0A-0A

3. Frequency: 100Hz(5ms/5ms)

4. Slew rate: 0.5A/uS

0A

4.0A

0A

4.0A

5.09V

4.87V

5.38V

4.87V

5.38V


8. Maximum Drain Voltage

Test Conditions During Start-up, Full Load.

VIN=264VAC, Iout=4A

Measured Results

Vdrain_max = 517V

% Derating = 517V/650V =79.5% (< 90%)


Test Conditions :

1. During Start-up, VIN=264VAC, Iout=4A.

a) SR-FET (Q1) = AO4260@18A/60V;

b) Parallel Diode (D3) : SS1060 @1A/60V

Measured Results:

VPIV_max = 50.2V

% Derating = 51.7V/60V = 86.17% (< 90%)

9. Output Rectifier Maximum Inverse Voltage


10. Conducted Emission – PK and AV (Output Float, Resistive load)

PK

AV

PK

AV

PK

AV

PK

AV

115Vac input

Live

230Vac input

Live

115Vac input

Neutral

230Vac input

Neutral


11a. Radiated Emission

110V AC input


11b. Radiated Emission

230V AC input


12. Temperature Rise Test

Measurment Point Input:90Vac Load:4.0A Input:264Vac Load:4.0A

Components Temperature() Temperature()

1 T-Ambient 40.0 40.0

2 U1(INN2125K) 85.5 84.9

3 Core (Transformer) 82.0 84.5

4 Winding (Transformer) 82.0 84.2

5 Q1, SR-MOSFET (AO4260) 87.7 89.8

6 C17, Solid-Ecap 1000uF 6.3V 82.5 84.0

7 EC4,primary Bulk Cap 83.9 80.7

8 Case, close to U1 72.5 72.6

Testing Conditions and Setup :

a) Perform under a controlled temperature chamber;

b) PCB is being mounted inside an enclosure and attach with a copper heat spreader

c) Thermal coupler (type-K) are attached to respective measuring points;

d) Temperature is recorded after 1 hours from initial turn on.

A Heat-Spreader is used to spread heats out from the enclosure.

The heat conductor (Al or Cu) should cover the InnoSwitch and SR-FET.

Plastic Enclosure


13. Heat-Spreader Assembly and Process

Silicon Glues(Min. 5 c.c. is to be applied in these area)

Heat-Spreader

(Materials : 0.3mm Copper Foil)

PCB Completed Final

Testing

Apply Silicon Glues

at INNO and SR-FET

Apply Heat-Spreader

on designated PCB

location

Hand Solder Ground

Terminal (If present)

Insert Heat-Spreader

Assembly into

Housing

33 mm

40 mm

33 mm

40 mm

28 mm

35 mm

3.5 mm (x2)

13 mm (x2)

Insulation Sheet

(Materials : Mylar, 0.43mm UL®)

Location of Insulation

Sheet

Silicon Glues(Min. 15 c.c. is to be applied in these area)


14. ESD Test

Contact Discharge Air Discharge

Level Test Voltage (KV) Level Test Voltage (KV)

1 2 (Pass) 1 2 (Pass)

2 4 (Pass) 2 6 (Pass)

3 6 (Pass) 3 8 (Pass)

4 8 (Pass) 4 15 (Pass)

- 18 (Pass)


15. Product Feature INNO-CP & other Components

(Q1, SR-FET)


16. Product Feature – Silicon Glue (Adhesive for Heat-Sinking)


17. Document Change History

Revision History

Date Author Revision Description & changes Reviewed

9-Nov-2015 RL Rev-1 First Released EH QUEK


China Sales Contacts & Important NoteCHINA (Shanghai)Room 2410 ,Charity Plaza, No.88, North CaoXi Road Shanghai, PRC 200030TEL: +86-21-6354 6323FAX: +86-21-6354 [email protected]

中国上海中国上海中国上海中国上海上海市漕溪北路88号圣爱广场2410室邮编: 200030电话:+86-21-6354 6323传真:+86-21-6354 [email protected]

CHINA (Shenzhen)

17/F, Hivac Building, No2, Keji Nan 8th Road,Nanshan District, ShenZhen, China.Zip Code: 518057TEL:+86-755-8672-8689 FAX:[email protected]

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CHINA (PI Guangzhou Lab)Room 311,3nd floor, No.9, Jianggong Road, Tianhe Software Park, Zhongshan thoroughfard,Tianhe District, Guangzhou, PRC 510660TEL:+86 20-8566-4509 FAX:+86 [email protected]

中国深圳中国深圳中国深圳中国深圳-广州实验室广州实验室广州实验室广州实验室广州市天河区中山大道天河软件园建工路9号3楼311室邮编:510660电话:+86-20-8566-4509 传真 +86 [email protected]

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中国深圳中国深圳中国深圳中国深圳-成都实验室成都实验室成都实验室成都实验室四川省成都市白丝街2号缤纷假日国际公寓1426号邮编:610016电话:+86-28-8676-3012传真:[email protected]

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time to improve reliability or manufacturability.

Power Integrations does not assume any liability arising from the use of any

device or circuit described herein.

POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY

DISCLAIMS ALL WARRANTIES INCLUDING,

WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY,

FITNESS FOR A PARTICULAR

PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.

PATENT INFORMATION

The products and applications illustrated herein (including transformer

construction and circuits’ external to the products) may be covered by one or

more U.S. and foreign patents, or potentially by pending U.S. and foreign patent

applications assigned to Power Integrations. A complete list of Power

Integrations’ patents may be found at www.powerint.com.

Power Integrations grants its customers a license under certain patent rights as

set forth at http://www.powerint.com/ip.htm

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Documents

Design of 5V@4A Adaptor with INN2125K (InnoSwitch-CE) · PDF fileAmbient Temprature T AMB ... Measurment Point Input:90Vac Load:4.0A Input:264Vac Load:4.0A ... 4 Winding (Transformer)