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WPR3 ICC-06 NEWCOM workshop - June 11th, 2006 Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems Presented by: Abdullah Atalar

Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

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Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems. Presented by: Abdullah Atalar. OUTLINE. Three areas of Interest Power amplifier nonlinearity and its effects on system performance - PowerPoint PPT Presentation

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Page 1: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Design, Modeling and ExperimentalCharacterisation of RF and Microwave Devices andSubsystems

Presented by: Abdullah Atalar

Page 2: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

OUTLINE

Three areas of Interest Power amplifier nonlinearity and its effects on

system performance Using Real Frequency Technique for

wideband matching of RF components Integration of RF IC Front-ends

Page 3: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power amplifier Nonlinearity and its effects on system performance

Chalmers University: Ali Behrevan, Thomas Eriksson

Bilkent University: Mustafa Durukal, Hakan Arslan, Gul Safak, Abdulllah Atalar, Tarik Reyhan

Polytechnik Torino: Daniel Bustos, Simona Donati, Marco Pirola, Giovanni Ghione

Page 4: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

A typical wireless transmitter

Page 5: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Digital baseband predistortion

Page 6: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

it++ simulation diagram

Page 7: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Nonlinearity model

AM/AM and AM/PM models Soft Limiter, RAPP, Saleh, Ghorbani, Rapp

and Arctan models Arctan model:

)(2211 )))(arctan())(arctan(()( txjetxtxty

x(t) complex envelope of input, y(t) complex envelope of output.

Page 8: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power Amplifier TypesSOFT LIMITER

Page 9: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power Amplifier TypesRAPP

Page 10: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power Amplifier Types3rd Order Polynomial

Page 11: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power Amplifier TypesSALEH (AM/AM)

Page 12: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Power Amplifier TypesSALEH (AM/PM)

Page 13: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

New amplifier class in it++

Implements nonlinearity models

Needs four parameters to represent nonlinearity: Two complex, two real.

Parameters are found by curve fitting to measured characteristics.

Page 14: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Page 15: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Page 16: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

A new predistorter class in it++

Page 17: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Update algorithm

During the training sequence for every input symbol, the coefficients of the polynomial predistorter are updated according to LMS algorithm using amplitude and phase errors.

Page 18: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Simulation #1: No Band Pass Filter

Output of raised cosine filter After power amplifierAfter predistorter

Page 19: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Simulation #2: With Band Pass Filter

Output of raised cosine filter After power amplifierAfter predistorter +BPF

Page 20: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Baseband Model of a Communication System that uses OFDM

Page 21: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Two Sources of Distortion In The Received Signal

Additive noise channel between the transmitter and receiver sides

Nonlinearity of the power amplifier at the end of the transmitter side

Page 22: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Effect of Noise on the System Performance

Page 23: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Effect of Noise on the System Performance

Figure of merit: Bit Error Rate (BER)

Error rate in a 16-QAM OFDM system with no amplification

SNR (signal to noise ratio) limits the BER of the system

To reduce the effect –>use Convolutional Encoder

Page 24: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Effect of Nonlinear Power Amplifier on the Transmitted Signal

In-

bandOuter-

bandOuter-band

Page 25: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Base-band Model of a Three Transmitter – Receiver System

Page 26: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Distortions Introduced by the Nonlinear Power Amplifier

In a single transmitter – receiver system In-band distortion

In a multiple transmitter – receiver system In-band distortion Outer-band distortion

Page 27: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Distortions Introduced by the Nonlinear Power Amplifier

Page 28: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Outer-band distortions overlap with and are added to the in-band distortions

Results in degradation in the BER performance

The amount of degradation depends on Degree of the nonlinearitySpacing between adjacent channels (Δf)

Distortions Introduced by the Nonlinear Power Amplifier

Page 29: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Degree of Nonlinearity (in simulations) identified by the amplifier parameter IBO (input

backoff)

How far the input is from the saturation region

IBO

Page 30: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Inputs of the Program

Number of transmitted bitsEncoder typeBase-band modulatorNumber of carriers in OFDMOversampling factorPower amplifier type IBO (input back-off)SNR (signal to noise ratio)Channel spacing

Page 31: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Graphical Interface for Link Simulator

Page 32: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

In All Simulations

Total number of bits = 106

No coding 16 – QAM OFDM Number of carriers = 1024 Oversampling factor = 16

Page 33: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Other Inputs For each amplifier type simulations are done

for the following parameters:

IBO (in dB): integer from 0 to 6SNR (in dB): integer from 0 to 20Channel spacing ÷ 2W = 1 : 0.2 : 3

W is the channel bandwidth of the transmitted signal

Page 34: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Simulation Results

Page 35: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Simulation Results

Page 36: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Simulation Results

Page 37: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Using Real Frequency Technique for wideband matching of RF components

Istanbul University: M. Sengul, S. Yarman

Techical University of Ilmenau: J. Trabert, Kurt Blau, Matthias Hein, C. Hartmann, J. Weber

Uppsala University: Peter Lindberg, Eric Ojefors, Anders Rydberg

Page 38: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Real Frequency Technique

An analytical method of matching network design

Applicable to components with measured data

Page 39: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Final front-end matching network (top) and back-end matching network (bottom).

17GHz-23 GHz RF SWITCH

Page 40: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

(IEEE ISCAS 2006, Kos, Greece, May 21-24, 2006)Transducer power gain of the matched switch

Page 41: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Matching Network Design for a Dual Band PIFA Antenna

Layout of antenna

Page 42: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

The main challenge in terminal antenna design for cellular applications is, due to the limited available volume, obtaining sufficient bandwidth, at multiple frequency bands, without loss of radiation efficiency.

Matching Network Design for a Dual Band PIFA Antenna

Page 43: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

A complex matching network synthesized using the simplified real frequency technique, to study the real achievable bandwidth of a dual band PIFA antenna.

Matching Network Design for a Dual Band PIFA Antenna

Page 44: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Double Band PIFA Antenna Matching Network

CAP

C=ID=

1.162 pFC1

CAP

C=ID=

1.075 pFC2

CAP

C=ID=

1.237 pFC3

IND

L=ID=

7.925 nHL1

IND

L=ID=

19.57 nHL2

IND

L=ID=

21.06 nHL3

IND

L=ID=

8.027 nHL4

1

SUBCKT

NET=ID=

"DB_PIFA900_1800" S1 PORT

Z=P=

50 Ohm1

Final matching network

Page 45: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Double Band Antenna824-960 and 1710-1990 MHz

Page 46: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Measured Results

Page 47: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Joint article submitted to EuCAP 2006.

Simulated and measured results indicatethe possibility of extending the useableoperating frequency band of a GSM900/1800antenna to quad band coverage, i.e.GSM850/900/1800/1900.

Matching Network Design for a Dual Band PIFA Antenna

Page 48: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

ApproachApproach IInvestigate port-isolations and their impedancesnvestigate port-isolations and their impedances Optimize radiating elements and port parametersOptimize radiating elements and port parameters Optimize beam forming and bandwidthOptimize beam forming and bandwidth

(superdirective feed)(superdirective feed) Final design of antenna array andFinal design of antenna array and

decoupling networkdecoupling network

(e.g. hybrid-integrated module)(e.g. hybrid-integrated module) Decoupling, matching and beam forming network

port 1 port 2 port n

Other possible applications for Real Other possible applications for Real Frequency TechniqueFrequency Technique

Page 49: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Integration of RF IC Front-ends

University of Pisa: D. Zito, B. Zeri, L. Fanucci

Technical University of Ilmenau: Kurt Blau, Matthias Hein

Uppsala University: Peter Lindberg, Eric Ojefors, Anders Rydberg

Page 50: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

TX/RX Antenna Switch

Image Reject Filter

LNA

De

mo

dula

to

r

PA

f0

Mo

du

lat

or

Single Silicon Die

RX

TX

Typical RF Front-end

Page 51: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Dem

odulato

r

PA

Modulato

r

Single Silicon Die

RX

TX

f0

LNA

Ant

enna

Sw

it ch

Desired RF Front-end

Page 52: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

RX

TX

Off-chip

Limited ZOFF /ZON

(Q-factor integrated inductors)

Insertion Loss ≈1-2 dB

TX/RX Antenna Switch State-of-Art

Page 53: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

fehje

eqL

bI

bV

,b bI V ,fe b bh I V

The BSI circuit can be exploited to implement high quality factor LC active filters

f0

1,

20 b b

eq

f I VL C

, 0 eqb b

eq

LQ I V

R

35< Q <120 in the range of 5.15< f0< 5.835

The Boot-Strapped Inductor (BSI)

Page 54: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Switching Mode (ON/OFF) Biasing (IB1, VB2)

Low/High Impedance (ZIN) High state if CA is ON Low state if CA is OFF

If inserted between antenna, receiver and transmitter, the BSI can be exploited to isolate T/R channels

Boot-Strapped Inductor (BSI): “Switching mode”

Page 55: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Patented

Time Division Duplexing

Different linearity constrains (R/T)

Receive Time Interval (RX)

CA OFF in Receiver

CA ON in Transmitter

Transmit Time Interval (TX)

CA ON in Receiver

CA OFF in Transmitter

Not de-embedded from LNA/PA

TX/RX Antenna Switch based on BSI

Page 56: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

TX/RX Antenna Switch: Chip (1/2)

Page 57: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Microstrip Test Board

TX/RX Antenna Switch: Chip (1/2)

Page 58: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

Insertion Loss (IL) vs. Power available from the source in R and T mode

Performance

ILR < 0.236 dBILT < 1.1 dB

< 2 dB

Specifications (typical IL)

TX/RX Antenna Switch: Performance vs. Specifications

Page 59: Design, Modeling and Experimental Characterisation of RF and Microwave Devices and Subsystems

WPR3 ICC-06 NEWCOM workshop - June 11th, 2006

The feasibility of a Fully Integrated Antenna Switch on standard silicon technology has been demonstrated and Patented

The main performances are beyond within the requirements of several Wireless LAN standards (ILRmax = 0.235 dB, ILTmax = 1.1 dB, @ 5-6 GHz)

“Silver Leaf” at IEEE Conf. PRIME 2005 (EPFL, Lausanne)

“First Price” (10KEuro) at NEWCom Idea Competition “M.Boella” (I3P, Torino)

TX/RX Antenna Switch : Conclusions