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Low-noise NIR InGaAs avalanche photodiode
keff ≈ 0.20, resulting in low excess noise
950–1700 nm response
Low dark current, low excess noise combine for superior sensitivity not achieved with contemporary APDs
Custom APDs available on request
Free-space optical communications
Laser range finding
Optical t ime domain reflectometry
Optical coherence tomogra-phy
Fluorescence measurements, spectroscopy, chromatogra-phy and electrophoresis
Telecommunications
LADAR/LIDAR
Applications
Features
DESCHUTES BSI™ APD Photoreceivers
MHz-Class Receivers with High-Responsivity,Back-Side-Illuminated NIR InGaAs/InAlAs APDs
Model RDC1-NJAF: 200µm APD, 300MHz
Model RDC1-JJAF: 75µm APD, 580MHz
Model RYC1-NJAF: 200µm APD, 200MHz
Model RVC1-NJAF: 200µm APD, 120MHz
Voxtel’s RxC-1000 Series high-sensitivity photoreceivers integrate our
Deschutes BSI™ backside-illuminated avalanche photodiodes (APDs) with
low-noise, high-bandwidth transimpedance amplif iers (TIAs). The back-
side-illuminated configuration of the Deschutes BSI™ detectors provides
both higher responsivity and lower capacitance than competing frontside-
illuminated APDs. The R-APD is custom-engineered for reduced excess
noise, which allows this photoreceiver to achieve higher sensitivity, bet-
ter signal-to-noise performance, and lower bit error rate (BER) than
conventional telecom APDs. A single-stage thermoelectric cooler (TEC)
is included to stabilize temperature. The RxC-1000 Series of photoreceivers comes standard with a large-
area and low-noise 200μm APD, but are also available with a smaller
75µm APD, which provides increased bandwidth and sensitivity. Contact
Voxtel for more information on this and other options.
Standard fiber pigtail options for the 75µm receivers include 62.5/125
(0.37NA) graded-index and 105/125 (0.37NA) step-index multi-mode fi-
bers; other fiber options can be custom ordered. Optionally available
with the photoreceivers are Support Electronics Modules, which provide
power conditioning and TEC control.
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 ©Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesDeschutes BSI™ APD Photoreceivers
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
D e s c h u t e s B S I ™ S e r i e s N e a r - I n f r a r e d A P D s
Spectral responsivity and quantum ef-ficiency of 200µm APD at 298K.
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesAPD Photoreceivers Deschutes BSI™
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
2
Standard receiver configurations with typi-cal NEP valves and bandwidths
SIDE VIEWwith cap
BOTTOM VIEW
2.39 ±0.15mm
6.65 ±0.14mm
0.38 ±0.03mm
6.35 mm
Ø 15.25 mm
10.16 mm
Ø 0.45 mm
Ø 1.50 mm
1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+
7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C
0.80 mm
5.08
mm
2.54
mm
0.80 mm
1 2 312
1 2 3
12
10.16 mm
Ø 15.25 mm
Ø 0.45 mm
Ø 1.50 mm
0.80 mm
5.08
mm
2.54
mm
0.80 mm
Ø 16.50 mm
Ø 8.00 mm
12.83 mm 3.61 mm 1000 mm
0.70 mm
6.35 mm
Ø 3.81 mm
Ø 16.50 mm
BOTTOM VIEW TOP VIEWSIDE VIEW
17.14 mm
Bandwidth [Hz]
Noi
se E
quiv
alen
t Po
wer
[nW
]
1.00E+08 1.00E+09 1.00E+10
18
16
14
12
10
6
4
0
2
8
RVC1-NJAFRYC1-NJAFRDC1-NJAFRDP1-NJAFRIP1-NJAFRIP1-JJAF (75µm)
TSense+ (B/C)
TSense– (E)
VCC
TEC–
TEC++APD
Gnd
Gnd
N/C
Out+
Out–
N/C
TSense
0.0
0.2
0.4
0.6
0.8
1
900 1100 1300 1500 1700
Wavelength [nm]
Deschutes BSI Responsivity
Deschutes BSI QE
3
RxC-1000 SeriesAPD Photoreceivers Deschutes BSI™
Linearity of Response: RDC1-JJAC 580-MHz
Linearity of response in the Deschutes BSI™ photoreceiver, model RDC1-
JJAF. 20-MHz modulated signal.
D e s c h u t e s B S I ™ S e r i e s N I R P h o t o r e c e i v e r5 8 0 M H z w i t h 75 µ m B a c k s i d e -I l l u m i n a t e d A P D
M O D E L R D C 1-J J A F
Parameter Min Typical Max Units
Spectral Range, λ 950 1064–1600 1750 nm
Active Diameter 75 μm
Bandwidth 200 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 100/140 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 3.1/2.4 nW at 1064/1550 nm
Low Frequency Cutoff 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 20 mA @ 3.3 V
Output Impedanceiii 75 90 Ω
Overload/Saturation Poweriv 100 µW
Maximum Instantaneous
Input Powerv1 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
i 1 0 M H z , - 4 0 d B m s i g n a li i S o u r c i n g 1 0 µ A , T= 2 9 8 Ki i i S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a li v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v A P D m u l t i p l i c a t i o n g a i n o f M= 1 0 w i t h a 1 0 n s 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F
250
200
150
100
50
0
0.1 0.30.2 0.5 13 2
Signal Power [µW]
Resp
onsi
vity
[kV/
W] Avg.
95%90%
Avg.95%90%M=10
M=20
Specifications
4
Linearity of Response: RDC1-NJAC 300-MHz
Linearity of response in the Deschutes BSI™ photoreceiver, model RDC1-
NJAF. 20-MHz modulated signal.
D e s c h u t e s B S I ™ S e r i e s N I R P h o t o r e c e i v e r3 0 0 M H z w i t h 2 0 0 µ m B a c k s i d e -I l l u m i n a t e d A P D
M O D E L R D C 1- N J A F
Parameter Min Typical Max Units
Spectral Range, λ 950 1064–1600 1750 nm
Active Diameter 200 μm
Bandwidth 300 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 100/140 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 4.1/3.2 nW at 1064/1550 nm
Low Frequency Cutoff 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 20 mA @ 3.3 V
Output Impedanceiii 75 90 Ω
Overload/Saturation Poweriv 100 µW
Maximum Instantaneous
Input Powerv5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesDeschutes BSI™ APD Photoreceivers
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
i 1 0 M H z , - 4 0 d B m s i g n a li i S o u r c i n g 1 0 µ A , T= 2 9 8 Ki i i S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a li v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v A P D m u l t i p l i c a t i o n g a i n o f M= 1 0 w i t h a 1 0 n s 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F
250
200
150
100
50
0
0.1 0.30.2 0.5 13 2
Signal Power [µW]
Resp
onsi
vity
[kV/
W] Avg.
95%90%
Avg.95%90%M=10
M=20
Specifications
5
D e s c h u t e s B S I ™ S e r i e s N I R P h o t o r e c e i v e r2 0 0 M H z w i t h 2 0 0 µ m B S I A P D
M O D E L RYC 1- N J A F
Specifications
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesAPD Photoreceivers Deschutes BSI™
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 200 MHz
APD Operating Gain, M 1 10-15 20
Receiver Responsivity at M=10i 80/100 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 4.0/3.1 nW at 1064/1550 nm
Low Frequency Cutoffii 30 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ T = 295 K
TEC ∆T 40 K @ T = 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode,
Voltage and ∆V/Kiii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 25 mA @ 5V
Output Impedenceiv 40 50 60 Ω
Overload/Saturation Powerv 20 35 μW
Max Instantaneous Input Powervi 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 1 0 M H z , - 4 0 d B m s i g n a li i - 3 d B , 1 µ A i n p u t i i i S o u r c i n g 1 0 µ A , T= 2 9 8 Ki v S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a lv 1 5 5 0 n m s i g n a l w i t h A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v i A P D m u l t i p l i c a t i o n g a i n o f M= 1 0 w i t h a 1 0 n s 1 0 6 4 n m s i g n a l a t 2 0 H z P R F
10
100
1,000
Frequency [Hz]
Rece
iver
Res
pons
ivit
y@
1550
nm
[kV
/W]
M=10
M=20
1.E+05 1.E+06 1.E+07 1.E+08 1.E+09
6
RVC1-NJAA Bandwidth
1.E+05 1.E+06 1.E+07 1.E+08 1.E+09Frequency [Hz]
Rece
iver
Res
pons
ivit
y [k
V/W
] M=10
M=20
10
100
1000
Specifications
D e s c h u t e s B S I ™ S e r i e s N I R P h o t o r e c e i v e r12 0 M H z w i t h 2 0 0 µ m B a c k s i d e I l l u m i n a t e d A P D
M O D E L R VC 1- N J A F
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesDeschutes BSI™ APD Photoreceivers
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Active Diameter 200 μm
Bandwidth 120 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M=10i 272/340 kV/W at 1064/1550 nm
Noise Equivalent Power at M=20 3.1/2.4 nW at 1064/1550 nm
Low Frequency Cutoff 7 25 kHz
APD Breakdown Voltage, VBR 45 50 55 V @ 295 K
TEC ∆T 40 K @ 295 K
TEC Supply 1.8/1.9 A/V
Temp Sensing Diode
Voltage and ∆V/Kii0.48
0.50
-2.18 mV/K0.51 V
TIA Power 22 28 36 mA @ 3.3 V
Output Impedenceiii 50 67 80 Ω
Overload/Saturation Poweriv 100 300 μW
Max Instantaneous Input Powerv 5 mW
Window Thickness 0.76 0.94 1.12 mm
Window Transparency 95/98% 1064/1550 nm
i 1 0 M H z , - 4 0 d B m s i g n a li i S o u r c i n g 1 0 μA, T=298Ki i i S i n g l e - e n d e d ; 1 0 0 Ω d i f f e r e n t i a li v 1 5 5 0 n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M= 1 0v A P D m u l t i p l i c a t i o n g a i n o f M= 1 0 w i t h a 1 0 n s 1 0 6 4 n m s i g n a l a t a 2 0 H z P R F
Not all combinations of product features are available. Please contact
Voxtel for specific ordering information and parts availability.
*Receiver bandwidth depends on APD diameter and capacitance.
O r d e r i n g I n f o r m a t i o n F o r R x C -10 0 0 S e r i e s A P D P r o d u c t s
C a u t i o n D u r i n g A P D O p e r a t i o n
If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to permanently damage the device. To guard against this, the user can add either a pro-tective resistor to the bias circuit or a current-limit-ing circuit in the supporting electronics.
The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage de-creases when the APD is cooled. Consequently, a re-verse bias operating point that is safe at room tem-perature may put the APD into breakdown at low temperature. The approximate temperature depen-dence of the breakdown voltage is published in the spec sheet for the part, but caution should be exer-cised when an APD is cooled.
Low-noise readout circuits usually have high im-pedance, and an unusually strong current pulse from the APD could generate a momentary excessive volt-
age that is higher than the readout’s supply voltage, possibly damaging the input to the amplifier. To pre-vent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line.
As noted in the specification, another consider-ation is that the APD gain changes depending on temperature. When an APD is used over a wide tem-perature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both.
Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system.
Voxtel Literature No. RxC1-xJAF, Version date: 06/2012 © Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.
RxC-1000 SeriesAPD Photoreceivers Deschutes BSI™
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006, www.voxtel- inc.com, T 971.223.5646, F 503.296.2862
R - C1 - J - F
Device Type Amplifier Detector Diameter Package Option Lens Option Revision
R=PhotoreceiverD=580MHz TIA
C=BSI Deschutes APD
J=75μmJ=TO-8 with 1-Stage TEC
A=Flat WindowF=40ºC ∆T
1-Stage TEC
Y=250MHz TIA N=200μmL=Single-mode
(SM) 7μm
V=160MHz TIAP=Multi-mode
(MM) 50/125μm
Q=MM 62.5/125μm
R=MM 105/125μm
7