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101 Innovation Drive San Jose, CA 95134 www.altera.com DDR and DDR2 SDRAM High-Performance Controller User Guide Software Version: 8.1 Document Date: November 2008

DDR & DDR2 SDRAM High-Performance Controller v8.1 User Guide › lehre › 2011... · The DDR and DDR2 SDRAM High-Performance Controller MegaCore functions are part of the MegaCore

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Page 1: DDR & DDR2 SDRAM High-Performance Controller v8.1 User Guide › lehre › 2011... · The DDR and DDR2 SDRAM High-Performance Controller MegaCore functions are part of the MegaCore

101 Innovation DriveSan Jose, CA 95134www.altera.com

DDR and DDR2 SDRAM High-PerformanceController User Guide

Software Version: 8.1Document Date: November 2008

Page 2: DDR & DDR2 SDRAM High-Performance Controller v8.1 User Guide › lehre › 2011... · The DDR and DDR2 SDRAM High-Performance Controller MegaCore functions are part of the MegaCore

Copyright © 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all otherwords and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and service marks of Altera Corporation in the U.S. and othercountries. All other product or service names are the property of their respective holders. Altera products are protected under numerous U.S. and foreign patents and pending ap-plications, maskwork rights, and copyrights. Altera warrants performance of its semiconductor products to current specifications in accordance with Altera's standard warranty,but reserves the right to make changes to any products and services at any time without notice. Altera assumes no responsibility or liability arising out of the application or use ofany information, product, or service described herein except as expressly agreed to in writing by Altera Corporation. Altera customers are advised to obtain the latest version ofdevice specifications before relying on any published information and before placing orders for products or services.

UG-01010-6.0

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© November 2008 Altera Corporation

Contents

Chapter 1. About These MegaCore FunctionsRelease Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–1Device Family Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–2General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–2MegaCore Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–3Performance and Resource Utilization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–3Installation and Licensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–5

OpenCore Plus Evaluation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–6OpenCore Plus Time-Out Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1–6

Chapter 2. Getting StartedDesign Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–1Select Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–2SOPC Builder Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–2

Specify Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–2Complete the SOPC Builder System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–3Simulate the System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–4

MegaWizard Plug-In Manager Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–4Specify Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–5Simulate the Example Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–7

Simulating Using NativeLink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–7IP Functional Simulations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–8

Compile the Example Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–11Program Device and Implement the Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2–12

Chapter 3. Functional DescriptionBlock Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–2

Command FIFO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Write Data FIFO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Write Data Tracking Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Main State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Bank Management Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Timer Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–3Initialization State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–4Address and Command Decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–4PHY Interface Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–4ODT Generation Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–4Low Power Mode Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–4

Control Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–5Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–5ECC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–7

Interrupts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–9Partial Writes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–9Partial Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–10ECC Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–10

Example Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–10Example Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–11

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iv

Interfaces and Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–13Interface Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–13

Full Rate Write, Avalon-MM Interface Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–14Full Rate Write, Native Interface Mode—Non-Consecutive Write . . . . . . . . . . . . . . . . . . . . . . . . 3–16Half Rate Write, Native Interface Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–19Full Rate Read, Avalon-MM Interface Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–22Half Rate Read, Native Interface Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–24Half Rate Read, Avalon-MM Interface Mode—Non-Consecutive Read . . . . . . . . . . . . . . . . . . . . 3–25Full Rate, Native Interface Mode—Alternate Read-Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–28User Refresh Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–31Self-Refresh and Power-Down Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–32Auto-Precharge Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–33DDR SDRAM Initialization Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–34DDR2 SDRAM Initialization Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–36

Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3–37

Chapter 4. Parameter SettingsMemory Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–1PHY Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–1Controller Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–1

Appendix A. ECC Register DescriptionECC Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–1Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–3

Appendix B. DDR and DDR2 SDRAM HP Controller Functional SimulationGetting Started . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–1DDR and DDR2 SDRAM High-Performance Controller Example Simulation . . . . . . . . . . . . . . . . . . . B–1

Creating A Simulation Testbench Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–2Creating the Example Project . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–2Configuring the DDR2 SDRAM High-Performance Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . B–2RTL Simulation Options in the DDR2 SDRAM High-Performance Controller . . . . . . . . . . . . . . B–3

Setting Up Quartus II NativeLink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–4Understanding the Example Design and Testbench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–5

Testbench Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–5Running the Example Testbench from Your Simulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–6Understanding the Testbench/ALTMEMPHY Stages of Operation . . . . . . . . . . . . . . . . . . . . . . . B–7Understanding the ModelSim Wave and Transcript Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–8

Modifying the Testbench for Additional Debug Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–21Additional Debug Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–21Adding Signals to the Example Testbench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–25

Simulation Flow For Other Simulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–25Additional Required Files and Compilation Order . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–25

Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B–26

Appendix C. LatencyLatency for High-Performance Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C–1

Additional InformationRevision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Info–1How to Contact Altera . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Info–1Typographic Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Info–2

DDR and DDR2 SDRAM High-Performance Controller User Guide © November 2008 Altera Corporation

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© November 2008 Altera Corporation

1. About These MegaCore Functions

Release InformationTable 1–1 provides information about this release of the DDR and DDR2 SDRAM High-Performance Controller MegaCore® functions.

Altera® verifies that the current version of the Quartus® II software compiles the previous version of each MegaCore function. The MegaCore IP Library Release Notes and Errata report any exceptions to this verification. Altera does not verify compilation with MegaCore function versions older than one release.

Device Family SupportMegaCore functions provide either full or preliminary support for target Altera device families, as described below:

■ Full support means the MegaCore function meets all functional and timing requirements for the device family and may be used in production designs

■ Preliminary support means the MegaCore function meets all functional requirements, but may still be undergoing timing analysis for the device family; it may be used in production designs with caution

Table 1–2 shows the level of support offered by the DDR and DDR2 SDRAM high-performance controller to each of the Altera device families.

Table 1–1. DDR and DDR2 SDRAM High-Performance Controller Release Information

Item Description

Version 8.1

Release Date November 2008

Ordering Codes IP-SDRAM/HPDDR (DDR SDRAM)

IP-SDRAM/HPDDR2 (DDR2 SDRAM)

Product IDs 00BE (DDR SDRAM)

00BF (DDR2 SDRAM)

00CO (ALTMEMPHY Megafunction)

Vendor ID 6AF7

Table 1–2. Device Family Support (Part 1 of 2)

Device Family Support

Arria® GX Full

Cyclone® III Full

HardCopy® II Full

Stratix® II Full

Stratix II GX Full

Stratix III Full

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1–2 Chapter 1: About These MegaCore FunctionsFeatures

Features■ Integrated error correction coding (ECC) function

■ Power-up calibrated on-chip termination (OCT) support for Cyclone III, Stratix III, and Stratix IV devices

■ Full-rate and half-rate support

■ SOPC Builder ready

■ Support for ALTMEMPHY megafunction

■ Support for industry-standard DDR and DDR2 SDRAM devices; and registered and unbuffered DIMMs

■ Optional support for self-refresh and power-down commands

■ Optional support for auto-precharge read and auto-precharge write commands

■ Optional user-controller refresh

■ Optional Avalon® Memory-Mapped (Avalon-MM) local interface

■ Easy-to-use MegaWizard® interface

■ Support for OpenCore Plus evaluation

■ Support for the Quartus II IP Advisor

■ IP functional simulation models for use in Altera-supported VHDL and Verilog HDL simulators

General DescriptionThe Altera DDR and DDR2 SDRAM High-Performance Controller MegaCore functions provide simplified interfaces to industry-standard DDR SDRAM and DDR2 SDRAM. The MegaCore functions work in conjunction with the Altera ALTMEMPHY megafunction.

f For more information on the ALTMEMPHY megafunction, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

Figure 1–1 on page 1–3 shows a system-level diagram including the example design that the DDR or DDR2 SDRAM High-Performance Controller MegaCore functions create for you.

Stratix IV Preliminary

Other device families No support

Table 1–2. Device Family Support (Part 2 of 2)

Device Family Support

DDR and DDR2 SDRAM High-Performance Controller User Guide © November 2008 Altera Corporation

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Chapter 1: About These MegaCore Functions 1–3MegaCore Verification

The MegaWizard Plug-In Manager generates an example design, consisting of an example driver, and your DDR or DDR2 SDRAM high-performance controller custom variation. The controller instantiates an instance of the ALTMEMPHY megafunction which in turn instantiates a PLL and DLL. You can optionally instantiate the DLL outside the ALTMEMPHY megafunction to share the DLL between multiple instances of the ALTMEMPHY megafunction.

The example design is a fully-functional design that you can simulate, synthesize, and use in hardware. The example driver is a self-test module that issues read and write commands to the controller and checks the read data to produce the pass/fail and test complete signals.

MegaCore VerificationMegaCore verification involves simulation testing. Altera has carried out extensive random, directed tests with functional test coverage using industry-standard Denali models to ensure the functionality of the DDR and DDR2 SDRAM high-performance controller. In addition, Altera performs a wide variety of gate-level tests of the DDR and DDR2 SDRAM high-performance controllers to verify the post-compilation functionality of the controllers.

Performance and Resource UtilizationTable 1–3 shows maximum performance results for the DDR and DDR2 SDRAM high-performance controllers using the Quartus II software, version 8.1 with Arria GX, Cyclone III, Stratix II, Stratix III, and Stratix IV devices.

Figure 1–1. System-Level Diagram

Note for Figure 1–1:

(1) When you choose Instantiate DLL Externally, DLL is instantiated outside the controller.

DDR/DDR2 SDRAM

Example Driver

DDR/DDR2 SDRAM Interface

Pass or Fail

Local Interface

Example Design

ControlLogic

(Encrypted)

DDR/DDR2 SDRAM High-Performance

Controller

ALTMEMPHYMegafunction

DLLPLL (1)

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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1–4 Chapter 1: About These MegaCore FunctionsPerformance and Resource Utilization

f For more information on device performance, see the relevant device handbook.

Table 1–4 shows typical sizes for the DDR or DDR2 SDRAM high-performance controller on Cyclone III devices.

Table 1–5 shows typical sizes for the DDR or DDR2 SDRAM high-performance controller on Stratix II, Stratix II GX, and Arria GX devices.

Table 1–6 shows typical sizes for the DDR or DDR2 SDRAM high-performance controller on Stratix III and Stratix IV devices.

Table 1–3. Maximum Performance for Half Rate and Full Rate Controllers

Device

System fMAX (MHz)

DDR SDRAM DDR2 SDRAM

Half Rate Full Rate Half Rate Full Rate

Cyclone III 167 (2) 167 (2) 200 (2) 200 (2)

Arria GX 200 200 233 167

Stratix II 200 200 333 267

Stratix III (1) 200 (2) 200 (2) 400 (2) 267(2)

Note to Table 1–3:

(1) The performance of the MegaCore function in Stratix IV devices is similar to the performance in Stratix III devices.(2) Pending device characterization.

Table 1–4. Resource Utilization in Cyclone III Devices

Local Data Width (Bits) Memory Width (Bits) LEs

Memory(M9K)

32 8 2,697 2

64 16 3,042 4

256 64 4,366 16

288 72 4,591 17

Table 1–5. Resource Utilization in Stratix II, Stratix II GX, and Arria GX Devices

Local Data Width (Bits)

Memory Width (Bits)

CombinationalALUTs

Logic Registers

Memory Blocks(M4K)

32 8 1,495 1,353 2

64 16 1,511 1,498 4

256 64 1,874 2,356 15

288 72 1,968 2,499 17

Table 1–6. Resource Utilization in Stratix III and Stratix IV Devices (Part 1 of 2)

Local Data Width (Bits)

Memory Width (Bits)

CombinationalALUTs

Logic Registers

Memory

M9K MLAB

32 8 1,746 1,375 1 0

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Chapter 1: About These MegaCore Functions 1–5Installation and Licensing

Installation and LicensingThe DDR and DDR2 SDRAM High-Performance Controller MegaCore functions are part of the MegaCore IP Library, which is distributed with the Quartus II software and downloadable from the Altera website, www.altera.com.

f For system requirements and installation instructions, refer to Quartus II Installation & Licensing for Windows or Quartus II Installation & Licensing for Linux Workstations.

Figure 1–2 shows the directory structure after you install the DDR and DDR2 SDRAM High-Performance Controller MegaCore functions, where <path> is the installation directory. The default installation directory on Windows is c:\altera\81; on Linux it is /opt/altera81.

You need a license for the MegaCore function only when you are completely satisfied with its functionality and performance, and want to take your design to production.

If you want to use the DDR or DDR2 SDRAM High-Performance Controller MegaCore function, you can request a license file from the Altera web site at www.altera.com/licensing and install it on your computer. When you request a license file, Altera emails you a license.dat file. If you do not have Internet access, contact your local Altera representative.

64 16 1,946 1,611 2 0

256 64 3,045 3,015 8 0

Table 1–6. Resource Utilization in Stratix III and Stratix IV Devices (Part 2 of 2)

Local Data Width (Bits)

Memory Width (Bits)

CombinationalALUTs

Logic Registers

Memory

M9K MLAB

Figure 1–2. Directory Structure

<path>

ddr_high_perfContains the DDR SDRAM High-Performance Controller MegaCore function files.

docContains all the documentation for the DDR SDRAM High-Performance Controller MegaCore function.

libContains encypted lower-level design files and other support files.

commonContains shared components.

Installation directory.

ipContains the Altera MegaCore IP Library and third-party IP cores.r

alteraContains the Altera MegaCore IP Library.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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1–6 Chapter 1: About These MegaCore FunctionsInstallation and Licensing

OpenCore Plus EvaluationWith Altera’s free OpenCore Plus evaluation feature, you can perform the following actions:

■ Simulate the behavior of a megafunction (Altera MegaCore function or AMPPSM megafunction) within your system

■ Verify the functionality of your design, as well as evaluate its size and speed quickly and easily

■ Generate time-limited device programming files for designs that include MegaCore functions

■ Program a device and verify your design in hardware

You need to purchase a license for the megafunction only when you are completely satisfied with its functionality and performance, and want to take your design to production.

f For more information on OpenCore Plus hardware evaluation using the DDR and DDR2 SDRAM high-performance controller, refer to AN320: OpenCore Plus Evaluation of Megafunctions.

OpenCore Plus Time-Out BehaviorOpenCore Plus hardware evaluation can support the following two modes of operation:

■ Untethered—the design runs for a limited time

■ Tethered—requires a connection between your board and the host computer. If tethered mode is supported by all megafunctions in a design, the device can operate for a longer time or indefinitely

All megafunctions in a device time out simultaneously when the most restrictive evaluation time is reached. If there is more than one megafunction in a design, a specific megafunction’s time-out behavior may be masked by the time-out behavior of the other megafunctions.

1 For MegaCore functions, the untethered time-out is 1 hour; the tethered time-out value is indefinite.

Your design stops working after the hardware evaluation time expires and the local_ready output goes low.

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© November 2008 Altera Corporation

2. Getting Started

Design FlowFigure 2–1 shows the stages for creating a system with the DDR and DDR2 SDRAM High-Performance Controller MegaCore function and the Quartus II software. The sections in this chapter describe each stage.

Figure 2–1. Design Flow

Specify Parameters

Select Design Flow

MegaWizard Plug-InManager Flow

SOPC BuilderFlow

Compile the Example Design

Program Device and Implement Design

Add Constraints

Simulate the Example Design

Specify Parameters

Simulate System

Complete SOPCBuilder System

Perform Post-CompilationTiming Analysis

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2–2 Chapter 2: Getting StartedSelect Flow

Select FlowYou can parameterize the DDR and DDR2 SDRAM High-Performance Controller MegaCore function using either one of the following flows:

■ SOPC Builder flow

■ MegaWizard Plug-in Manager flow

Table 2–1 summarizes the advantages offered by the different parameterization flows.

SOPC Builder FlowThe SOPC Builder flow allows you to add the DDR and DDR2 SDRAM High-Performance Controller MegaCore function directly to a new or existing SOPC Builder system. You can also easily add other available components to quickly create an SOPC Builder system with a DDR and DDR2 SDRAM High-Performance Controller, such as the Nios II processor, external memory controllers, and scatter/gather DMA controllers. SOPC Builder automatically creates the system interconnect logic and system simulation environment.

f For more information about SOPC Builder, refer to volume 4 of the Quartus II Handbook. For more information about how to use controllers with SOPC Builder, refer to AN 517: Using High-Performance DDR, DDR2, and DDR3 SDRAM With SOPC Builder. For more information on the Quartus II software, refer to the Quartus II Help.

Specify ParametersTo specify DDR and DDR2 SDRAM High-Performance Controller parameters using the SOPC Builder flow, follow these steps:

1. In the Quartus II software, create a new Quartus II project with the New Project Wizard.

2. On the Tools menu, click SOPC Builder.

3. For a new system, specify the system name and language.

4. Add DDR or DDR2 SDRAM High-Performance Controller to your system from the System Contents tab.

1 The DDR or DDR2 SDRAM High-Performance Controller is in the SDRAM folder under the Memories and Memory Controllers folder.

5. Specify the required parameters on all pages in the Parameter Settings tab.

Table 2–1. Advantages of the Parameterization Flows

SOPC Builder Flow MegaWizard Plug-in Manager Flow

■ Automatically-generated simulation environment

■ Create custom components and integrate them via the component wizard

■ All components are automatically interconnected with the Avalon-MM interface

■ Design directly from the DDR or DDR2 SDRAM interface to peripheral device(s)

■ Achieves higher-frequency operation

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Chapter 2: Getting Started 2–3SOPC Builder Flow

f For detailed explanation of the parameters, refer to the “Parameter Settings” on page 4–1.

6. Click Finish to complete the DDR and DDR2 SDRAM High-Performance Controller MegaCore function and add it to the system.

Complete the SOPC Builder SystemTo complete the SOPC Builder system, follow these steps:

1. In the System Contents tab, select Nios II Processor and click Add.

2. On the Nios II Processor page, in the Core Nios II tab, select altmemddr for Reset Vector and Exception Vector.

3. Change the Reset Vector Offset and the Exception Vector Offset to an Avalon address that is not written to by the ALTMEMPHY megafunction during its calibration process.

c The ALTMEMPHY megafunction performs memory interface calibration every time it is reset and in doing so writes to addresses 0x0 to 0x1f. If you want your memory contents to remain intact through a system reset, you should avoid using the memory addresses below 0x20. This step is not necessary, if you reload your SDRAM memory contents from flash every time you reset.

To calculate the Avalon-MM address equivalent of the memory address range 0x0 to 0x1f, multiply the memory address by the width of the memory interface data bus in bytes. For example, if your external memory data width is 8 bits, then the Reset Vector Offset should be 0x20 and the Exception Vector Offset should be 0x40. If your external memory data width is 16 bits, then the Reset Vector Offset should be 0x40 and the Exception Vector Offset, 0x60.

4. Click Finish.

5. On the System Contents tab, expand Interface Protocols and expand Serial.

6. Select JTAG UART and click Add.

7. Click Finish.

1 If there are warnings about overlapping addresses, on the System menu click Auto Assign Base Addresses.

If you enable ECC and there are warnings about overlapping IRQs, on the System menu click Auto Assign IRQs.

External Memory Interface Width Reset Vector Offset Exception Vector Offset

8 0x20 0x40

16 0x40 0x60

32 0x80 0xA0

64 0x100 0x120

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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2–4 Chapter 2: Getting StartedMegaWizard Plug-In Manager Flow

8. For this example system, ensure all the other modules are clocked on the altmemddr_sysclk, to avoid any unnecessary clock-domain crossing logic.

9. Click Generate.

1 Among the files generated by SOPC Builder is the Quartus II IP File (.qip). This file contains information about a generated IP core or system. In most cases, the .qip file contains all of the necessary assignments and information required to process the MegaCore function or system in the Quartus II compiler. Generally, a single .qip file is generated for each SOPC Builder system. However, some more complex SOPC Builder components generate a separate .qip file. In that case, the system .qip file references the component .qip file.

10. To ensure the automatically-generated constraints function correctly you must ensure the pin names and pin group assignments match, otherwise the design may not fit when you compile your design. To edit the pin names, edit the altmemddr_example_top.v file. Also, edit the altmemddr_example_top.v file to replace the example driver and the DDR or DDR2 SDRAM High-Performance controller, and instantiate your SOPC Builder-generated system.

Simulate the SystemDuring system generation, SOPC Builder optionally generates a simulation model and testbench for the entire system, which you can use to easily simulate your system in any of Altera's supported simulation tools. SOPC Builder also generates a set of ModelSim® Tcl scripts and macros that you can use to compile the testbench, IP functional simulation models, and plain-text RTL design files that describe your system in the ModelSim simulation software.

f For more information about simulating SOPC Builder systems, refer to volume 4 of the Quartus II Handbook and AN 351: Simulating Nios II Systems.

1 Before compiling your design, you must run the Tcl constraint script, <variation name>_pin_assignments.tcl.

MegaWizard Plug-In Manager FlowThe MegaWizard Plug-In Manager flow allows you to customize the DDR and DDR2 SDRAM High-Performance Controller MegaCore function, and manually integrate the function into your design.

1 You can alternatively use the IP Advisor to help you start your DDR and DDR2 SDRAM High-Performance Controller MegaCore design. On the Quartus II Tools menu, point to Advisors, and then click IP Advisor. The IP Advisor guides you through a series of recommendations for selecting, parameterizing, evaluating, and instantiating a DDR and DDR2 SDRAM High-Performance Controller MegaCore function into your design. It then guides you through a complete Quartus II compilation of your project.

f For more information about the MegaWizard Plug-In Manager and the IP Advisor, refer to the Quartus II Help.

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Chapter 2: Getting Started 2–5MegaWizard Plug-In Manager Flow

Specify ParametersTo specify DDR or DDR2 SDRAM High-Performance Controller parameters using the MegaWizard Plug-in Manager flow, follow these steps:

1. In the Quartus II software, create a new Quartus II project with the New Project Wizard.

2. On the Tools menu, click MegaWizard Plug-In Manager and follow the steps to start the MegaWizard Plug-In Manager.

1 The DDR or DDR2 SDRAM High-Performance Controller MegaCore function is in the Interfaces folder under the Memory Controllers folder.

3. Specify the parameters on all pages in the Parameter Settings tab.

f For detailed explanation of the parameters, refer to the “Parameter Settings” on page 4–1.

4. On the EDA tab, turn on Generate simulation model to generate an IP functional simulation model for the MegaCore function in the selected language.

An IP functional simulation model is a cycle-accurate VHDL or Verilog HDL model produced by the Quartus II software.

c Use the simulation models only for simulation and not for synthesis or any other purposes. Using these models for synthesis creates a nonfunctional design.

1 Some third-party synthesis tools can use a netlist that contains only the structure of the MegaCore function, but not detailed logic, to optimize performance of the design that contains the MegaCore function. If your synthesis tool supports this feature, turn on Generate netlist.

5. On the Summary tab, select the files you want to generate. A gray checkmark indicates a file that is automatically generated. All other files are optional.

f For more information about the files generated in your project directory, see Table 2–2.

6. Click Finish to generate the MegaCore function and supporting files.

7. If you generate the MegaCore function instance in a Quartus II project, you are prompted to add the .qip files to the current Quartus II project. When prompted to add the .qip files to your project, click Yes. The addition of the .qip files enables their visibility to Nativelink. Nativelink requires the .qip files to include libraries for simulation.

1 The .qip file is generated by the MegaWizard interface, and contains information about the generated IP core. In most cases, the .qip file contains all of the necessary assignments and information required to process the MegaCore function or system in the Quartus II compiler. The MegaWizard interface generates a single .qip file for each MegaCore function.

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2–6 Chapter 2: Getting StartedMegaWizard Plug-In Manager Flow

8. After you review the generation report, click Exit to close the MegaWizard Plug-In Manager.

Table 2–2 describes the generated files and other files that may be in your project directory. The names and types of files specified in the MegaWizard Plug-In Manager report vary based on whether you created your design with VHDL or Verilog HDL.

9. Set the <variation name>_example_top.v or .vhd file to be the project top-level design file.

a. On the File menu, click Open.

b. Browse to <variation name>_example_top and click Open.

c. On the Project menu, click Set as Top-Level Entity.

10. Simulate the example design (see “Simulate the Example Design” on page 2–7) and compile (see “Compile the Example Design” on page 2–11).

Table 2–2. Generated Files (Note 1)

Filename Description

<variation name>.bsf Quartus II symbol file for the MegaCore function variation. You can use this file in the Quartus II block diagram editor.

<variation name>.html MegaCore function report file.

<variation name>.vo or .vho VHDL or Verilog HDL gate-level simulation model.

<variation name>.v or .vhd A MegaCore function variation file, which defines a VHDL or Verilog HDL top-level description of the custom MegaCore function. Instantiate the entity defined by this file inside of your design. Include this file when compiling your design in the Quartus II software.

<variation name>_auk_ddr_hp_controller_wrapper.vo or .vho

VHDL or Verilog HDL IP functional simulation model.

<variation name>_phy_alt_mem_sequencer_wrapper.vo or .vho

VHDL or Verilog HDL IP functional simulation model.

<variation name>_phy.vho VHDL IP functional simulation model of the ALTMEMPHY megafunction. Required for VHDL simulation only.

<variation name>_bb.v Verilog HDL black-box file for the MegaCore function variation. Use this file when using a third-party EDA tool to synthesize your design.

<variation name>_example_driver.v or .vhd Example self-checking test generator that matches your variation.

<variation name>_example_top.v or .vhd Example top-level design file that you should set as your Quartus II project top level. Instantiates the example driver and the controller.

<variation name>.qip Contains Quartus II project information for your MegaCore function variations.

Note to Table 2–2:

(1) <variation name> is the name you give to the controller you create with the Megawizard.

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Chapter 2: Getting Started 2–7MegaWizard Plug-In Manager Flow

Simulate the Example DesignYou can simulate the example design with the MegaWizard Plug-In Manager-generated IP functional simulation models.

f For detailed information on how to simulate with the IP functional simulation models, refer to Appendix B, DDR and DDR2 SDRAM HP Controller Functional Simulation.

The MegaWizard Plug-In Manager generates a VHDL or Verilog HDL testbench for your example design, which is in the testbench directory in your project directory.

You can use the IP functional simulation model with any Altera-supported VHDL or Verilog HDL simulator.

You can perform a simulation in a third-party simulation tool from within the Quartus II software, using NativeLink.

f For more information on the testbench, see “Example Design” on page 3–10.

For more information on NativeLink, refer to the Simulating Altera IP in Third-Party Simulation Tools chapter in volume 3 of the Quartus II Handbook.

Simulating Using NativeLinkTo set up simulation in the Quartus II software using NativeLink, follow these steps:

1. Create a custom variation with an IP functional simulation model, refer to step 4 in the “Specify Parameters” section on page 2–5.

2. Set the top-level entity to the example project.

a. On the File menu, click Open.

b. Browse to <variation name>_example_top and click Open.

c. On the Project menu, click Set as Top-Level Entity.

3. Set up the Quartus II NativeLink.

a. On the Assignments menu, click Settings. In the Category list, expand EDA Tool Settings and click Simulation.

b. From the Tool name list, click on your preferred simulator.

1 Check that the absolute path to your third-party simulator executable is set. On the Tools menu, click Options and select EDA Tools Options.

c. In NativeLink settings, select Compile test bench and click Test Benches.

d. Click New at the Test Benches page to create a testbench.

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2–8 Chapter 2: Getting StartedMegaWizard Plug-In Manager Flow

4. On the New Test Bench Settings dialog box, do the following:

a. Enter a name for the Test bench name.

b. In Top level module in test bench, enter the name of the automatically generated testbench, <variation name>_example_top_tb.

c. In Design instance in test bench, enter the name of the top-level instance, dut.

d. Under Simulation period, set End simulation at to 500 µs.

e. Add the testbench files and automatically-generated memory model files. In the File name field, browse to the location of the memory model and the testbench, click Open and then click Add. The testbench is <variation name>_example_top_tb.v; memory model is <variation name>_mem_model.v.

f The auto generated generic SDRAM model may be used as a placeholder for a specific memory vendor supplied model. For information on how to replace the generic model with a vendor specific model, refer to “Perform RTL/Functional Simulation (Optional)” in AN 328: Interfacing DDR2 SDRAM with Stratix II, Stratix II GX, and Arria GX Devices.

f. Select the files and click OK.

5. On the Processing menu, point to Start and click Start Analysis & Elaboration to start analysis.

6. On the Tools menu, point to Run EDA Simulation Tool and click EDA RTL Simulation.

IP Functional SimulationsFor VHDL simulations with IP functional simulation models, perform the following steps:

1. Create a directory in the <project directory>\testbench directory.

2. Launch your simulation tool from this directory and create the following libraries:

■ altera_mf

■ lpm

■ sgate

■ <device name>

■ altera

■ ALTGXB

■ <device name>_hssi

■ auk_ddr_hp_user_lib

3. Compile the files into the appropriate library as shown in Table 2–3. The files are in VHDL93 format.

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Chapter 2: Getting Started 2–9MegaWizard Plug-In Manager Flow

4. Load the testbench in your simulator with the timestep set to picoseconds.

For Verilog HDL simulations with IP functional simulation models, follow these steps:

1. Create a directory in the <project directory>\testbench directory.

Table 2–3. Files to Compile—VHDL IP Functional Simulation Models

Library File Name

altera_mf <QUARTUS ROOTDIR>/eda/sim_lib/altera_mf_components.vhd

<QUARTUS ROOTDIR>/eda/sim_lib/altera_mf.vhd

lpm /eda/sim_lib/220pack.vhd

/eda/sim_lib/220model.vhd

sgate eda/sim_lib/sgate_pack.vhd

eda/sim_lib/sgate.vhd

<device name> eda/sim_lib/<device name>_atoms.vhd

eda/sim_lib/<device name>_ components.vhd

eda/sim_lib/<device name>_hssi_atoms.vhd (1)

altera eda/sim_lib/altera_primitives_components.vhd

eda/sim_lib/altera_primitives.vhd

ALTGXB (1) <device name>_mf.vhd

<device name>_mf_components.vhd

<device name>_hssi (1) <device name>_hssi_components.vhd

<device name>_hssi_atoms.vhd

auk_ddr_hp_user_lib <QUARTUS ROOTDIR>/

libraries/vhdl/altera/altera_europa_support_lib.vhd

<project directory>/<variation name>_phy_alt_mem_phy_sequencer_wrapper.vho

<project directory>/<variation name>_auk_ddr_hp_controller_wrapper.vho

<project directory>/<variation name>_phy.vho

<project directory>/<variation name>.vhd

<project directory>/<variation name>_example_top.vhd

<project directory>/<variation name>_controller_phy.vhd

<project directory>/<variation name>_phy_alt_mem_phy_reconfig.vhd (2)

<project directory>/<variation name>_phy_alt_mem_phy_pll.vhd

<project directory>/<variation name>_example_driver.vhd

<project directory>/<variation name>_ex_lfsr8.vhd

testbench/<variation name>_example_top_tb.vhd

testbench/<variation name>_mem_model.vhd

Note for Table 2–3:

(1) Applicable only for Arria GX, Stratix GX, Stratix II GX and Stratix IV devices.(2) Applicable only for Arria GX, Hardcopy II, Stratix II and Stratix II GX devices.

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2–10 Chapter 2: Getting StartedMegaWizard Plug-In Manager Flow

2. Launch your simulation tool from this directory and create the following libraries:

■ altera_mf_ver

■ lpm_ver

■ sgate_ver

■ <device name>_ver

■ altera_ver

■ ALTGXB_ver

■ <device name>_hssi_ver

■ auk_ddr_hp_user_lib

3. Compile the files into the appropriate library as shown in Table 2–4.

Table 2–4. Files to Compile—Verilog HDL IP Functional Simulation Models

Library File Name

altera_mf_ver <QUARTUS ROOTDIR>/eda/sim_lib/altera_mf.v

lpm_ver /eda/sim_lib/220model.v

sgate_ver eda/sim_lib/sgate.v

<device name>_ver eda/sim_lib/<device name>_atoms.v

eda/sim_lib/<device name>_hssi_atoms.v (1)

altera_ver eda/sim_lib/altera_primitives.v

ALTGXB_ver (1) <device name>_mf.v

<device name>_hssi_ver (1) <device name>_hssi_atoms.v

auk_ddr_hp_user_lib <QUARTUS ROOTDIR>/

libraries/vhdl/altera/altera_europa_support_lib.v

<project directory>/<variation name>_phy_alt_mem_phy_sequencer_wrapper.vo

<project directory>/<variation name>_auk_ddr_hp_controller_wrapper.vo

<project directory>/<variation name>.v

<project directory>/<variation name>_example_top.v

<project directory>/<variation name>_phy.v

<project directory>/<variation name>_controller_phy.v

<project directory>/<variation name>_alt_mem_phy_defines.v

<project directory>/<variation name>_phy_alt_mem_phy_reconfig.v (2)

<project directory>/<variation name>_phy_alt_mem_phy_pll.v

<project directory>/<variation name>_phy_alt_mem_phy.v

<project directory>/<variation name>_example_driver.v

<project directory>/<variation name>_ex_lfsr8.v

testbench/<variation name>_example_top_tb.v

testbench/<variation name>_mem_model.v

Notes for Table 2–4:

(1) Applicable only for Arria GX, Stratix GX, Stratix II GX and Stratix IV devices.(2) Applicable only for Arria GX, Hardcopy II, Stratix II and Stratix II GX devices.

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Chapter 2: Getting Started 2–11Compile the Example Design

4. Configure your simulator to use transport delays, a timestep of picoseconds, and to include all the libraries in Table 2–4.

Compile the Example DesignTo use the Quartus II software to compile the example design and perform post-compilation timing analysis, follow these steps:

1. Set up the TimeQuest® timing analyzer:

a. On the Assignments menu, click Timing Analysis Settings, select Use TimeQuest Timing Analyzer during compilation, and click OK.

b. Add the Synopsys design constraints file, <variation name>_phy_ddr_timing.sdc, to your project. On the Project menu, click Add/Remove Files in Project and browse to select the file.

c. Add the .sdc file for the example top-level design, <variation name>_example_top.sdc, to your project. This file is only required if you are using the example as the top level design.

2. Use one of the following procedures to specify I/O standard assignments for pins:

■ If you have a single DDR or DDR2 SDRAM interface, and your top-level pins have default naming shown in the example design, run <variation name>_pin_assignments.tcl.

■ If your design contains pin names that do not match the design example, follow these steps to add a prefix to your pin names:

a. On the Assignments menu, click Pin Planner.

b. On the Edit menu, click Create/Import Megafunction.

c. Select Import an existing custom megafunction and navigate to <variation name>.ppf.

d. Type the prefix you want to use in Instance name. For example, change mem_addr to core1_mem_addr.

c Make sure that the top-level pin names in your design match the pin names in the constraints added to your project. The memory controller functionality and timing is not guaranteed if the pin names and the constraints do not match.

3. Set the top-level entity to the example top-level design.

a. On the File menu, click Open.

b. Browse to <variation name>_example_top and click Open.

c. On the Project menu, click Set as Top-Level Entity.

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2–12 Chapter 2: Getting StartedProgram Device and Implement the Design

4. Assign the DQ and DQS pin locations.

a. You should assign pin locations to the pins in your design, so the Quartus II software fits your design correctly. The timing analysis is only accurate if you constrain all pins.

b. Use either the Pin Planner or Assignment Editor to assign the clock source pin manually. Also choose which DQS pin groups should be used by assigning each DQS pin to the required pin. The Quartus II Fitter then automatically places the respective DQ signals onto suitable DQ pins within each group.

1 When assigning pins in your design, ensure that you set an appropriate I/O standard for the non-memory interfaces, such as the clock source and the reset inputs. For example, for DDR SDRAM select 2.5 V and for DDR2 SDRAM select 1.8 V. Also select in which bank or side of the device you want the Quartus II software to place them.

5. For Stratix III and Stratix IV designs, if you are using advanced I/O timing, specify board trace models in the Device & Pin Options dialog box. If you are using any other device and not using advanced I/O timing, specify the output pin loading for all memory interface pins.

6. Select your required I/O driver strength (derived from your board simulation) to ensure that you correctly drive each signal or ODT setting and do not suffer from overshoot or undershoot.

7. To compile the design, on the Processing menu, click Start Compilation.

f To attach the SignalTap® II logic analyzer to your design, refer to AN 380: Test DDR or DDR2 SDRAM Interfaces on Hardware Using the Example Driver.

Program Device and Implement the DesignAfter you have compiled the example design, you can perform gate-level simulation (see “Simulate the Example Design” on page 2–7) or program your targeted Altera device to verify the example design in hardware.

To implement your design based on the example design, replace the example driver in the example design with your own logic.

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© November 2008 Altera Corporation

3. Functional Description

The DDR and DDR2 SDRAM high-performance controllers instantiate encrypted control logic and the ALTMEMPHY megafunction. The controller accepts read and write requests from the user on its local interface, using either the Avalon-MM interface protocol or the native interface protocol. It converts these requests into the necessary SDRAM commands, including any required bank management commands. Each read or write request on the Avalon-MM or native interface maps to one SDRAM read or write command. Since the controller uses a memory burst length of 4, read and write requests are always of length 1 on the local interface if the controller is in half-rate mode. In full-rate mode, the controller accepts requests of size 1 or 2 on the local interface. Requests of size 2 on the local interface produce better throughput as whole memory burst is used.

The bank management logic in the controller keeps a row open in every bank in the memory system. For example, a controller configured for a double-sided, 4-bank DDR or DDR2 SDRAM DIMM keeps an open row in each of the 8 banks. The controller allows you to request an auto-precharge read or auto-precharge write, allowing control over whether to keep that row open after the request. You can achieve maximum efficiency when you issue reads and writes to the same bank, with the last access to that bank being an auto-precharge read or write. The controller does not do any access reordering.

f For more information on the ALTMEMPHY megafunction, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

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3–2 Chapter 3: Functional DescriptionBlock Description

Block DescriptionFigure 3–1 shows a block diagram of the DDR or DDR2 SDRAM high-performance controller.

Figure 3–2 shows a block diagram of the DDR or DDR2 SDRAM high-performance controller architecture.

The blocks in Figure 3–2 are described in the following sections.

Figure 3–1. DDR and DDR2 SDRAM High-Performance Controller Block Diagram

Note to Figure 3–1:

(1) DDR2 SDRAM high-performance controller only.

local_addrlocal_be

local_burstbeginlocal_read_req

local_refresh_reqlocal_size

local_wdatalocal_write_req

local_powerdn_reqlocal_self_rfsh_req

mem_amem_bamem_cas_nmem_ckemem_cs_nmem_dqmem_dqsmem_dmmem_odt (1)mem_ras_nmem_we_n

local_init_donelocal_rdata

local_rdata_validlocal_ready

local_refresh_acklocal_wdata_req

local_powerdn_acklocal_self_rfsh_ack

Control Logic

(Encrypted)

DDR/DDR2 SDRAM High-Performance Controller

ALTMEMPHYMegafunction

Figure 3–2. DDR and DDR2 SDRAM High-Performance Controller Architecture Block Diagram

TimerLogic

InitializationState Machine

CommandFIFO

ALTMEMPHYInterface

Avalon-MM or NativeSlave Interface

Write DataFIFO

Bank Management

Logic

Write DataTracking Logic

Address andCommand

Decode

PHY InterfaceLogic

Main StateMachine

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Chapter 3: Functional Description 3–3Block Description

Command FIFOThis FIFO allows the controller to buffer up to four consecutive read or write commands. It is built from logic elements, and stores the address, read or write flag, and burst count information. If this FIFO fills up, the local_ready signal to the user is deasserted until the main state machine takes a command from the FIFO.

Write Data FIFOThe write data FIFO holds the write data from the user until the main state machine can send it to the ALTMEMPHY megafunction (which does not have a write data buffer). In Avalon-MM interface mode, the user logic presents a write request, address, burst count, and one or more beats of data at the same time. The write data beats are placed into the FIFO until they are needed. In native interface mode, the user logic presents a write request, address, and burst count. The controller then requests the correct number of write data beats from the user via the local_wdata_req signal, and the user logic must return the write data in the clock cycle after the write data request signal.

This FIFO is sized to be deeper than the command FIFO to prevent it from filling up and interrupting streaming writes.

Write Data Tracking LogicThis logic keeps track of how many beats of write data are in the FIFO. In native interface mode, this logic manages how much more data to request from the user logic and issues the local_wdata_req signal.

Main State MachineThis state machine decides what DDR commands to issue based on inputs from the command FIFO, the bank management logic, and the timer logic.

Bank Management LogicThe bank management logic keeps track the current state of each bank. It can keep a row open in every bank in your memory system. The state machine uses the information provided by this logic to decide whether it needs to issue bank management commands before it reads or writes to the bank. The controller always leaves the bank open unless the user requests an auto-precharge read or write. The periodic refresh process also causes all the banks to be closed.

Timer LogicThe timer logic tracks whether the required minimum number of clock cycles has passed since the last relevant command was issued. For example, the timer logic records how many cycles have elapsed since the last activate command so that the state machine knows it is safe to issue a read or write command (tRCD). The timer logic also counts the number of clock cycles since the last periodic refresh command and sends a high priority alert to the state machine if the number of clock cycles has expired.

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3–4 Chapter 3: Functional DescriptionBlock Description

Initialization State MachineThe initialization state machine issues the appropriate sequence of command to initialize the memory devices. It is specific to DDR and DDR2 as each memory type requires a different sequence of initialization commands.

If the ALTMEMPHY megafunction is in AFI mode, then the megafunction is responsible for initializing the memory. In this case, the controller does not have the initialization state machine.

Address and Command DecodeWhen the state machine wants to issue a command to the memory, it asserts a set of internal signals. The address and command decode logic turns these into the DDR-specific RAS/CAS/WE commands.

PHY Interface LogicWhen the main state machine issues a write command to the memory, the write data for that write burst has to be fetched from the write data FIFO. The relationship between write command and write data depends on the memory type, ALTMEMPHY megafunction interface type, CAS latency, and the full-rate or half-rate setting. The PHY interface logic adjusts the timing of the write data FIFO read request signal so that the data arrives on the external memory interface DQ pins at the correct time.

ODT Generation LogicThe ODT generation logic (not shown) calculates when and for how long to enable the ODT outputs. It also decides which ODT bit to enable, based on the number of chip selects in the system.

■ 1 DIMM (1 or 2 Chip Selects)

In the case of a single DIMM, the ODT signal is only asserted during writes. The ODT signal on the DIMM at mem_cs[0] is always used, even if the write command on the bus is to mem_cs[1]. In other words, mem_odt[0] is always asserted even if there are two ODT signals.

■ 2 or more DIMMs

In the multiple DIMM case, the appropriate ODT bit is asserted for both read and writes. The ODT signal on the adjacent DIMM is enabled as shown.

Low Power Mode LogicThe low power mode logic (not shown) monitors the local_powerdn_req and local_self_rfsh_req request signals. This logic also informs the user of the current low power state via the local_powerdn_ack and local_self_rfsh_ack acknowledge signals.

If a write/read is happening to: ODT enabled:

mem_cs[0]or cs[1] mem_odt[2]

mem_cs[2] or cs[3] mem_odt[0]

mem_cs[4] or cs[5] mem_odt[6]

mem_cs[6] or cs[7] mem_odt[4]

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Chapter 3: Functional Description 3–5Block Description

Control LogicBus commands control SDRAM devices using combinations of the mem_ras_n, mem_cas_n, and mem_we_n signals. For example, on a clock cycle where all three signals are high, the associated command is a no operation (NOP). A NOP command is also indicated when the chip select signal is not asserted. Table 3–1 shows the standard SDRAM bus commands.

The DDR and DDR2 SDRAM high-performance controllers must open SDRAM banks before they access addresses in that bank. The row and bank to be opened are registered at the same time as the active (ACT) command. The DDR and DDR2 SDRAM high-performance controllers close the bank and open it again if they need to access a different row. The precharge (PCH) command closes only a bank.

The primary commands used to access SDRAM are read (RD) and write (WR). When the WR command is issued, the initial column address and data word is registered. When a RD command is issued, the initial address is registered. The initial data appears on the data bus 2 to 3 clock cycles later (3 to 5 for DDR2 SDRAM). This delay is the column address strobe (CAS) latency and is due to the time required to read the internal DRAM core and register the data on the bus. The CAS latency depends on the speed of the SDRAM and the frequency of the memory clock. In general, the faster the clock, the more cycles of CAS latency are required. After the initial RD or WR command, sequential reads and writes continue until the burst length is reached or a burst terminate (BT) command is issued. DDR and DDR2 SDRAM devices support burst lengths of 2, 4, or 8 data cycles. The auto-refresh command (ARF) is issued periodically to ensure data retention. This function is performed by the DDR or DDR2 SDRAM high-performance controller.

The load mode register command (LMR) configures the SDRAM mode register. This register stores the CAS latency, burst length, and burst type.

f For more information, refer to the specification of the SDRAM that you are using.

LatencyThere are two types of latency that you must consider for memory controller designs—read and write latencies. We define the read and write latencies as follows.

■ Read latency is the time it takes for the read data to appear at the local interface after you assert the read request signal to the controller.

Table 3–1. Bus Commands

Command Acronym ras_n cas_n we_n

No operation NOP High High High

Active ACT Low High High

Read RD High Low High

Write WR High Low Low

Burst terminate BT High High Low

Precharge PCH Low High Low

Auto refresh ARF Low Low High

Load mode register LMR Low Low Low

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3–6 Chapter 3: Functional DescriptionBlock Description

■ Write latency is the time it takes for the write data to appear at the memory interface after you assert the write request signal to the controller.

Latency calculations are made with the following assumptions:

■ Reading and writing to the rows that are already open

■ The local_ready signal is asserted high (no wait states)

■ No refresh cycles occur before transaction

■ The latency is defined using the local side frequency and absolute time (ns)

1 For the half rate controller, the local side frequency is half the memory interface frequency; for the full rate controller, it is equal to the memory interface frequency.

Altera defines the read and write latencies in terms of the local interface clock frequency and by the absolute time for the memory controllers.

Table 3–2 shows read and write latency derived from the write and read latency definitions for half and full rate controllers and for Arria GX, Cyclone III, Stratix II, Stratix III, and Stratix IV devices.

Table 3–2. Typical Latency

DeviceController

RateFrequency

(MHz)Latency

TypeLatency (Cycles)

Latency (ns)

Arria GX Half 233 Read 17.5 150.22

Write 10.5 90.13

Full 233 Read 20 85.84

Write 10 42.92

Cyclone III Half 200 Read 17.5 175

Write 10.5 105

Full 167 Read 20 120

Write 10 60

Stratix II Half 333 Read 17.5 105

Write 10.5 63

Full 200 Read 20 100

Write 10 50

Stratix III Half 400 Read 22.125 110.63

Write 13 65

Full 267 Read 22.5 84.38

Write 11.5 43.13

Stratix IV Half 400 Read 23 115

Write 13 65

Full 267 Read 22.5 84.38

Write 11.5 43.13

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Chapter 3: Functional Description 3–7Block Description

1 The exact latency depends on your precise configuration. You should obtain precise latency from simulation, but this figure may vary in hardware because of the automatic calibration process.

f Refer to Appendix C, Latency for more detailed information.

ECCThe optional error correction coding (ECC) comprises an encoder and a decoder-corrector, which can detect and correct single-bit errors and detect double-bit errors. The ECC uses an 8-bit ECC for each 64-bit message. The ECC has the following features:

■ Hamming code ECC that encodes every 64-bits of data into 72-bits of codeword with 8-bits of Hamming code parity bits

■ Latency:

■ Maximum of 1 or 2 clock delay during writes

■ Minimum 1 or 3 clock delay during reads

■ Detects and corrects all single-bit errors. Also the ECC sends an interrupt when the user-defined threshold for a single-bit error is reached.

■ Detects all double-bit errors. Also, the ECC counts the number of double-bit errors and sends an interrupt when the user-define threshold for double-bit error is reached.

■ Accepts partial writes

■ Creates forced errors to check the functioning of the ECC

■ Powers up in a sensible state

Figure 3–3 shows the ECC block diagram.

The ECC comprises the following blocks:

■ The encoder—encodes the 64-bit message to a 72-bit codeword

■ The decoder-corrector—decodes and corrects the 72-bit codeword if possible

Figure 3–3. ECC Block Diagram

Decoder-Corrector

ECCController

Encoder

WriteMessage

N x 64 Bits

ECC

WriteCodewordN x 72 Bits

Read Message

N x 64 Bits

32 Bits

ReadCodewordN x 72 Bits

N x 72 Bits DDR or DDR2SDRAM

MemoryController

To Local Interface

From Local Interface

To and From Local Interface

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–8 Chapter 3: Functional DescriptionBlock Description

■ The ECC controller—controls multiple encoder and decoder-correctors, so that the ECC can handle different bus widths. Also, it controls the following functions of the encoder and decoder-corrector:

■ Interrupts:

■ Detected and corrected single-bit error

■ Detected double-bit error

■ Single-bit error counter threshold exceeded

■ Double-bit error counter threshold exceeded

■ Configuration registers:

■ Single-bit error detection counter threshold

■ Double-bit error detection counter threshold

■ Capture status for first encountered error or most recent error

■ Enable deliberate corruption of ECC for test purposes

■ Status registers:

■ Error address

■ Error type: single-bit error or double-bit error

■ Respective byte error ECC syndrome

■ Error signal—an error signal corresponding to the data word is provided with the data and goes high if a double-bit error that cannot be corrected occurs in the return data word.

■ Counters:

■ Detected and/or corrected single-bit errors

■ Detected double-bit errors

f For more information on the ECC registers, see Appendix A, ECC Register Description.

The ECC can instantiate multiple encoders, each running in parallel, to encode any width of data words assuming they are integer multiples of 64.

The ECC operates between the local (native or Avalon-MM interface) and the memory controller.

The ECC has an N × 64-bit (where N is an integer) wide interface, between the local interface and the ECC, for receiving and returning data from the local interface. This interface can be a native interface or an Avalon-MM slave interface, you select the type of interface in the MegaWizard interface.

The ECC has a second interface between the local interface and the ECC, which is a 32-bit wide Avalon-MM slave to control and report the status of the operation of the ECC controller.

The encoded data from the ECC is sent to the memory controller using a N × 72-bit wide Avalon-MM master interface, which is between the ECC and the memory controller.

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Chapter 3: Functional Description 3–9Block Description

When testing the DDR SDRAM high-performance controller, you can turn off the ECC.

InterruptsThe ECC issues an interrupt signal when one of the following scenarios occurs:

■ The single-bit error counter reaches the set maximum single-bit error threshold value.

■ The double-bit error counter reaches the set maximum double-bit error threshold value.

The error counters increment every time the respective event occurs for all N parts of the return data word. This incremented value is compared with the maximum threshold and an interrupt signal is sent when the value is equal to the maximum threshold. The ECC clears the interrupts when you write a 1 to the respective status register. You can mask the interrupts from either of the counters using the control word.

Partial WritesThe ECC supports partial writes. Along with the address, data, and burst signals, the Avalon-MM interface also supports a signal vector that is responsible for byte-enable. Every bit of this signal vector represents a byte on the data-bus. Thus, a 0 on any of these bits is a signal for the controller not to write to that particular location—a partial write. For partial writes, the ECC performs the following steps:

■ Stalls further read or write commands from the Avalon-MM interface when it receives a partial write condition.

■ Simultaneously sends a self-generated read command, for the partial write address, to the memory controller.

■ Upon receiving a return data from the memory controller for the particular address, the ECC decodes the data, checks for errors, and then sends it to the ECC controller.

■ The ECC controller merges the corrected or correct dataword with the incoming information.

■ Sends the updated dataword to the encoder for encoding and then sends to the memory controller with a write command.

■ Releases the stall of commands from the Avalon-MM interface, which allows it to receive new commands.

The following corner cases can occur:

■ A single-bit error during the read phase of the read-modify-write process. In this case, the single-bit error is corrected first, the single-bit error counter is incremented and then a partial write is performed to this corrected decoded data word.

■ A double-bit error during the read phase of the read-modify-write process. In this case, the double-bit error counter is incremented and an interrupt is sent through the Avalon-MM interface. The new write word is not written to its location. A separate field in the interrupt status register highlights this condition.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–10 Chapter 3: Functional DescriptionExample Design

Partial BurstsSome DIMMs do not have the DM pins and so do not support partial bursts. A minimum of four words must be written to the memory at the same time. In cases of partial burst write, the ECC offers a mechanism similar to the partial write.

In cases of partial bursts, the write data from the native interface is stored in a 64-bit wide FIFO buffer of maximum burst size depth, while in parallel a read command of the corresponding addresses is sent to the DIMM. Further commands from the native interface are stalled until the current burst is read, modified, and written back to the memory controller.

ECC LatencyUsing the ECC results in the following latency changes:

■ Burst Length 1

■ Burst Length 2

Burst Length 1

For a local burst length of 1, the write latency increases by one clock cycle; the read latency increases by one clock cycle (including checking and correction).

A partial write results in a read followed by write in the ECC controller, so latency depends on the time the controller takes to fetch the data from the particular address.

Table 3–3 shows the relationship between burst lengths and rate.

Burst Length 2

For a local burst length of 2, the write latency increases by two clock cycles; the read latency increases by one clock cycle (including checking and correction).

A partial write results in a read followed by write in the ECC controller, so latency depends on the time the controller takes to fetch the data from the particular address.

For a single-bit error, the automatic correction of memory takes place without stalling the read cycle (if enabled), which stalls further commands to the ECC controller, while the correction takes place.

Example DesignThe MegaWizard Plug-In Manager helps you create an example design that shows you how to instantiate and connect the DDR or DDR2 SDRAM high-performance controller. The example design consists of the DDR or DDR2 SDRAM high-performance controller, some driver logic to issue read and write requests to the controller, a PLL to create the necessary clocks, and a DLL (Stratix series only). The example design is a working system that you can compile and use for both static timing checks and board tests.

Table 3–3. Burst Lengths and Rates

Local Burst Length Rate Memory Burst Length

1 Half 4

2 Full 4

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Chapter 3: Functional Description 3–11Example Design

Figure 3–4 shows the testbench and the example design.

Table 3–4 describes the files that are associated with the example design and the testbench.

Example DriverThe example driver is a self-checking test pattern generator for the memory interface. It uses a state machine to write and read from the memory to verify that the interface is operating correctly.

Figure 3–4. Testbench and Example Design

Example Driver

clock_source

test_complete

pnf

Example Design

Testbench

DDR SDRAMDIMM Model

Bidrectional Board Delay Model

DLL

DDR SDRAM High-Performance

Controller

ALTMEMPHYMegafunction

PLL

Table 3–4. Example Design and Testbench Files

Filename Description

<variation name>_example_top_tb.v or .vhd Testbench for the example design.

<variation name>_example_top.v or .vhd Example design.

<variation name>_mem_model.v or .vhd Memory model.

<variation name>_example_driver.v or .vhd Example driver.

<variation name> .v or .vhd Top-level description of the custom MegaCore function.

<variation name>.qip Contains Quartus II project information for your MegaCore function variations.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–12 Chapter 3: Functional DescriptionExample Design

It performs the following tests and loops back the tests indefinitely:

■ Sequential addressing writes and reads

The state machine writes pseudo-random data generated by a linear feedback shift register (LFSR) to a set of incrementing row, bank, and column addresses. The state machine then resets the LFSR, reads back the same set of addresses, and compares the data it receives against the expected data. You can adjust the length and pattern of the bursts that are written by changing the MAX_ROW, MAX_BANK, and MAX_COL constants in the example driver source code, and the entire memory space can be tested by adjusting these values. You can skip this test by setting the test_seq_addr_on signal to logic zero.

■ Incomplete write operation

The state machine issues a series of write requests that are less than the maximum burst size supported by your controller variation. The addresses are then read back to ensure that the controller has issued the correct signals to the memory. This test is only applicable in full-rate mode, when the local burst size is two. You can skip this test by setting the test_incomplete_writes_on signal to logic zero.

■ Byte enable/data mask pin operation

The state machine issues two sets of write commands, the first of which clears a range of addresses. The second set of write commands has only one byte enable bit asserted. The state machine then issues a read request to the same addresses and the data is verified. This test checks if the data mask pins are operating correctly. You can skip this test by setting the test_dm_pin_on signal to logic zero.

■ Address pin operation

The example driver generates a series of write and read requests starting with an all-zeros pattern, a walking-one pattern, a walking-zero pattern, and ending with an all-zeros pattern. This test checks to make sure that all the individual address bits are operating correctly. You can skip this test by setting the test_addr_pin_on signal to logic zero.

■ Low-power mode operation

The example driver requests the controller to place the memory into power-down and self-refresh states, and hold it in those states for the amount of time specified by the COUNTER_VALUE signal. You can vary this value to adjust the duration the memory is kept in the low-power states. This test is only available if your controller variation enables the low-power mode option.

The example driver has four outputs that allow you to observe which tests are currently running and if the tests are passing. The pass not fail (pnf) signal goes low once one or more errors occur and remains low. The pass not fail per byte (pnf_per_byte) signal goes low when there is incorrect data in a byte but goes back high again once correct data is observed in the following byte. The test_status signal indicates the test that is currently running, allowing you to determine which test has failed. The test_complete signal goes high for a single clock cycle at the end of the set of tests.

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Chapter 3: Functional Description 3–13Interfaces and Signals

Table 3–5 shows the bit mapping for each test status.

Interfaces and Signals This section describes the following topics:

■ “Interface Description”

■ “Signals” on page 3–37

Interface DescriptionThis section describes the following local-side interface requests. You can use the half-rate and full-rate modes with both Avalon-MM and native interface modes.

■ “Full Rate Write, Avalon-MM Interface Mode” on page 3–14

■ “Full Rate Write, Native Interface Mode—Non-Consecutive Write” on page 3–16

■ “Half Rate Write, Native Interface Mode” on page 3–19

■ “Full Rate Read, Avalon-MM Interface Mode” on page 3–22

■ “Half Rate Read, Native Interface Mode” on page 3–24

■ “Half Rate Read, Avalon-MM Interface Mode—Non-Consecutive Read” on page 3–25

■ “Full Rate, Native Interface Mode—Alternate Read-Write” on page 3–28

■ “User Refresh Control” on page 3–31

■ “Self-Refresh and Power-Down Commands” on page 3–32

■ “Auto-Precharge Commands” on page 3–33

■ “DDR SDRAM Initialization Timing” on page 3–34

■ “DDR2 SDRAM Initialization Timing” on page 3–36

Table 3–5. Test Status[] Bit Mapping

Bit Test

0 Sequential address test

1 Incomplete write test

2 Data mask pin test

3 Address pin test

4 Power-down test

5 Self-refresh test

6 Auto precharge test

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3–14 Chapter 3: Functional DescriptionInterfaces and Signals

Full Rate Write, Avalon-MM Interface ModeFigure 3–5 on page 3–14 shows write accesses with a controller in full-rate mode and using the Local Interface Protocol option set to Avalon Memory-Mapped interface. The figure shows three back-to-back write requests, each of burst size 2 to sequential addresses. In full-rate mode, the controller allows you to use burst size 1 or 2. To achieve the highest throughput, you should use bursts of size 2, which correspond to a complete memory burst of 4. Bursts of size 1 on the local interface are only half as efficient because each request still corresponds to a memory burst of size 4 but only of half of the data is used.

Figure 3–5. Full Rate Write, Avalon-MM Interface

Note to Figure 3–5:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

phy_clk

Local Interface

local_address

local_size

local_ready

2

local_write_req

local_wdata

local_be

ddr_a

ddr_ba

control_wdata_valid

control_wdata

control_be

ddr_cs_n

DDR Command (1)

control_dqs_burst

mem_clk

mem_addr

mem_bamem_cs_n

Mem Command (1)

mem_dm

mem_dq

mem_dqs

PHY - Memory Interface

00 02 04

AA BB CC DD FFEE

FF

04 00 0800

NOP WR NOP WR WRNOP NOP

AA BB CC DD FFEE

04 00 08 0000

NOP WR NOP WR WRNOP NOP

0

A A B B C C DD E E F F

Controller - PHY Interface

FF

00

0

[1] [2] [3] [4] [5] [7][6]

local_read_req

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Chapter 3: Functional Description 3–15Interfaces and Signals

The following sequence corresponds with the numbered items in Figure 3–5 on page 3–14.

1. The user logic requests the first write, by asserting the local_write_req signal, and the size and address for this write. In this example, the request is a burst of length 2 (4 on the memory side) to chip select 1. The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle. If the local_ready signal was not asserted, the user logic must keep the write request, size, and address signals asserted until the local_ready signal is registered high.

f See Avalon Interface Specifications for more details.

1 local_be is active high while mem_dm is active low.

To map local_wdata and local_be to mem_dq and mem_dm, consider the following full rate example with 32-bit wide local_wdata and 16-bit wide mem_dq.

These values map to:

2. The user logic requests a second write to a sequential address of size 2 (4 on the memory side). The local_ready signal remains asserted, which indicates that the controller has accepted the request. The address increments by the local burst size.

3. The user logic requests a third write to a sequential address, again of size 2. The controller is able to buffer up to four requests so the local_ready signal stays high and the request is accepted.

4. The controller issues the necessary memory command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

5. The controller asserts the control_wdata_valid signal to indicate to the ALTMEMPHY megafunction that valid write data and write data masks are present on the inputs to the ALTMEMPHY megafunction.

6. The controller asserts the control_dqs_burst signals to control the timing of the DQS signal that the ALTMEMPHY megafunction issues to the memory.

f See the “Handshake Mechanism Between Write Commands and Write Data” section of the External DDR Memory PHY Interface Megafunction (ALTMEMPHY) User Guide for more details of this interface.

7. The ALTMEMPHY megafunction issues the write command and sends the write data and write DQS to the memory.

local_wdata = <22334455> <667788AA> <BBCCDDEE>

local_be = <1100> <0110> <1010>

mem_dq = <4455> <2233> <88AA> <6677> <DDEE> <BBCC>

mem_dm = <1 1> <0 0> <0 1> <1 0> <0 1> <0 1>

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3–16 Chapter 3: Functional DescriptionInterfaces and Signals

Full Rate Write, Native Interface Mode—Non-Consecutive WriteFigure 3–6 on page 3–17 shows write accesses with a controller in full-rate mode and using the Local Interface Protocol setting set to Native interface. The figure shows non-consecutive write-to-write requests, each of burst size 2 to sequential addresses.

In full-rate mode, the controller allows you to use burst size 1 or 2. To achieve the highest throughput, you should use bursts of size 2, which correspond to a complete memory burst of 4. Bursts of size 1 on the local interface are only half as efficient because each request still corresponds to a memory burst of size 4 but only half of the data is used.

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Chapter 3: Functional Description 3–17Interfaces and Signals

Figure 3–6. Full Rate Write, Native Interface Mode—Non-Consecutive Write

Note to Figure 3–6:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [13][12]

phy_clk

Controller-PHY Interface

PHY Memory Interface

mem_clk

Local Interface

local_address

local_size

local_ready

local_write_req

local_wdata_req

local_wdata

local_be

0 4 802 804 806 808 80A 000

2

AA BB CC DD EE FF GG HH II JJ KK LL

3

ddr_a

ddr_ba

ddr_cs_n[0]

DDR Command (1)

control_wdata_val[0]

control_dqs_burst[0]

control_wdata

control_be

08 00 04 00 04 00 08 00 0C 00 10 00 14

WR PCH ACT WR WR WR WR WR

1 AA BB CC DD

3

mem_addr

mem_ba

mem_cs_n

Mem Command (1)

mem_dm[0]

mem_dq

mem_dqs[0]

0 8 00 04 00 04 00 08 00 0C 00 10

WR PCH ACT WR WR WR WR

0 A A B B 0 C C D D

FF HHGGEE

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–18 Chapter 3: Functional DescriptionInterfaces and Signals

The following sequence corresponds with the numbered items Figure 3–6 on page 3–17.

1. The user logic initiates the first write by asserting local_write_req signal, and the size and address for this write. In this example, the request is a burst length of 2 to local address 0x000004. This local address is mapped to the following memory address in full-rate mode.

mem_row_address = 0x0000

mem_col_address = 0x0004<<1 = 0x0008

mem_bank_address = 0x00

The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle. If the local_ready signal is not asserted, the user logic must keep the write request, size, and address signals asserted until the local_ready signal is registered high.

2. The user logic initiates a second write to a different memory row within the same bank. The request for the second write is a burst length is 2 to local address 0x000004. In this example, the user logic continues to request subsequent writes to addresses 0x000804, 0x000806, 0x000808 and 0x00080A. The starting address, 0x000802 is mapped to the following memory address in full-rate mode.

mem_row_address = 0x0004

mem_col_address = 0x0002<<1 = 0x0004

mem_bank_address = 0x00

3. In native mode, the controller requests write data and byte enables by asserting local_wdata_req signal. The local_wdata and local_be signals must be asserted within one clock cycle after the local_wdata_req signal. In this example, the controller also continues to request write data for the subsequent writes. The user logic must be able to supply the write data for the entire burst when it requests a write.

First write local_wdata = <AA> <BB> to local_address = 0x000004

Second write local_wdata = <CC> <DD> to local_address = 0x000802

4. The controller continues to accept commands until the command queue is full. When the command queue is full, the controller deasserts the local_ready signal indicating that it has not accepted the command.

5. The controller issues the first write memory command and column address (0x0008) to the ALTMEMPHY megafunction for it to send to the memory device.

6. The controller asserts the control_wdata_valid signal to indicate to the ALTMEMPHY megafunction that valid write data and write data masks are present on the inputs to the ALTMEMPHY megafunction.

7. The controller asserts the control_dqs_burst signals to control the timing of the DQS signal that the ALTMEMPHY megafunction issues to the memory.

1 See the "Handshake Mechanism Between Write Commands and Write Data" section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for more details of this interface.

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Chapter 3: Functional Description 3–19Interfaces and Signals

8. The ALTMEMPHY megafunction issues the write command and sends the write data and write DQS to the memory.

9. The controller issues a PCH command to close current memory row (0x0000) and allow the second write to a different memory row (0x0004).

10. The controller, then issues an ACT command to open next memory row (0x0004).

11. The controller also issues the next write memory command and column address (0x0004) to the ALTMEMPHY megafunction for it to send to the memory device.

12. The ALTMEMPHY megafunction issues the PCH commands to the memory.

13. The ALTMEMPHY megafunction issues the ACT commands to the memory.

Half Rate Write, Native Interface ModeFigure 3–7 on page 3–20 shows write accesses with a controller in half-rate mode and using the Local Interface Protocol setting set to Native interface. The figure shows three back-to-back write requests, each of burst length 1 to sequential addresses. Each request on the native interface maps directly to a single write burst of the length of 4 on the memory side because the controller is in half-rate mode. In half-rate, the ratio between the width of the local interface write data bus and the memory data bus is 4:1.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–20 Chapter 3: Functional DescriptionInterfaces and Signals

Figure 3–7. Half Rate Write, Native Interface Mode

Note to Figure 3–7:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

phy_clk

Local Interface

local_address

local_size

local_ready

00 01 02

1

local_write_req

local_wdata_req

BBAA DDCC FFEElocal_wdata

FF FF FFlocal_be

ddr_a

ddr_ba

control_wdata_valid

BBAA DDCC FFEEcontrol_wdata

FF FF FFcontrol_be

00 04 08

ddr_cs_n

DDR Command (1) NOPWRNOP

control_dqs_burst

00 04 08

NOPWRNOP

00

mem_clkmem_addr

mem_ba

mem_cs_n

Mem Command (1)

mem_dm

mem_dqsmem_dq A A B B C C D D E E F F

PHY Memory Interface

Controller - PHY Interface

[1] [2] [3] [8][4] [5] [6] [7]

0

0

local_read_req

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Chapter 3: Functional Description 3–21Interfaces and Signals

The following sequence corresponds with the numbered items in Figure 3–7 on page 3–20.

1. The user logic requests the first write by asserting the local_write_req signal, and the size and address for this write. In this example, the request is a burst of length 1 (4 on the memory side) address 0. The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle. If the local_ready signal was not asserted, the user logic must keep the write request, size, and address signals asserted until the local_ready signal is registered high.

These values map to::

2. The user logic requests a second write to a sequential address of size 1 (4 on the memory side). The local_ready signal remains asserted, which indicates that the controller has accepted the request. The address increments by the local burst size.

3. The controller requests the write data and byte enables for the write from the user logic. The write data and byte enables must be presented in the clock cycle after the request. In this example, the controller also continues to request write data for the subsequent writes. The user logic must be able to supply the write data for the entire burst when it requests a write.

4. The user logic to a sequential address, again of size 1. The controller is able to buffer up to four requests so the local_ready signal stays high and the request is accepted.

5. The controller issues the necessary memory command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

6. The controller asserts the control_wdata_valid signal to indicate to the ALTMEMPHY megafunction that valid write data and write data masks are present on the inputs to the ALTMEMPHY megafunction.

7. The controller asserts the control_dqs_burst signals to control the timing of the DQS signal that the ALTMEMPHY megafunction issues to the memory.

f See the “Handshake Mechanism Between Write Commands and Write Data” section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for more details of this interface.

8. The ALTMEMPHY megafunction issues the write command and sends the write data and write DQS to the memory.

local_wdata = <22334455> <667788AA> <BBCCDDEE>

local_be = <1100> <0110> <1010>

mem_dq = <55> <44> <33> <22> <AA> <88> <77> <66> <EE> <DD> <CC> <BB>

mem_dm = <1> <1> <0> <0> <1> <0> <0> <1> <1> <0> <1> <1>

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–22 Chapter 3: Functional DescriptionInterfaces and Signals

Full Rate Read, Avalon-MM Interface ModeFigure 3–8 shows three consecutive read requests of the same burst size. In full-rate mode, the controller allows you to use burst size 1 or 2. To achieve the highest throughput, you bursts of 2, which correspond to a complete memory burst of 4. Bursts of size 1 on the local interface are only half as efficient because each request still corresponds to a memory burst of size 4 but only of half of the data is used.

The following sequence corresponds with the numbered items in Figure 3–8.

1. The user logic requests the first read by asserting the read request signal, the burst begin signal, the burst size and address for this read. In this example, the request is a burst of length 2 (4 on the memory side). The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle. If the local_ready signal was not asserted, the user logic must keep the read request, size, and address signals asserted. The burst begin signal does not need to be held asserted if the ready signal is not asserted.

f See Avalon Interface Specifications for more details.

Figure 3–8. Full Rate Read, Avalon-MM Interface Mode

Note to Figure 3–8:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

local_size

local_burstbegin

local_read_req

local_ready

local_rdata_valid

ddr_a

ddr_ba

control_doing_read

ddr_cs_n

DDR Command (1)

mem_clk

mem_addr

mem_ba

mem_cs_n

Mem Command (1)mem_dq

mem_dqs

PHY - Memory Interface

Local Interface

phy_clk

local_address

04 00 08

RDNOP NOP NOPRD NOP RD

E E FFDDCBA CBA

local_rdata

0

Controller - PHY Interface

2

00 02 04

AA BB FFCC DD EE

control_rdata_valid

control_rdata AA BB FFCC DD EE

0400 00 0800

0

RDNOP NOP NOPRD NOP RD

0000

[1] [2] [3] [8][4] [5] [6] [7]

local_write_req

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Chapter 3: Functional Description 3–23Interfaces and Signals

2. The user logic requests a second read to a different address, again of size 2 (4 on the memory side). The controller is able to buffer up to four requests so the local_ready signal stays high and the request is accepted.

3. The user logic requests a third read to a different address, of size 2 (4 on the memory side). The local_ready signal remains asserted, which indicates that the controller has accepted the request.

4. The controller issues the necessary memory command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

5. The controller asserts the control_doing_rd signal to indicate to the ALTMEMPHY megafunction how many clock cycles of read data it should expect. The ALTMEMPHY megafunction uses the control_doing_rd signal to enable its capture registers for the expected duration of the memory burst.

f See the “Handshake Mechanism Between Read Commands and Read Data” section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for more details of this interface.

6. The ALTMEMPHY megafunction issues the read commands to the memory and captures the read data from the memory.

7. The ALTMEMPHY megafunction returns data to the controller after resynchronizing it to the phy_clk domain by asserting the control_rdata_valid signal when there is valid read data on the control_rdata bus.

8. The controller returns the read data to the user by asserting the local_rdata_valid signal when there is valid read data on the local_rdata bus. If Enable error correction and detection logic is disabled, there is no delay between the control_rdata and the local_rdata buses. If there is ECC logic in the controller, there is one or three clock cycles of delay between the control_rdata and local_rdata buses.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–24 Chapter 3: Functional DescriptionInterfaces and Signals

Half Rate Read, Native Interface ModeFigure 3–9 on page 3–24 shows three consecutive read requests of the same burst size. In half-rate mode, the controller allows you to use burst size 1, which corresponds to a complete memory burst of 4.

The following sequence corresponds with the numbered items in Figure 3–9.

1. The user logic requests the first read by asserting the read request signal, the burst size and address for this read. In this example, the request is a burst of length 1 (4 on the memory side). The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle. If the local_ready signal was not asserted, the user logic must keep the read request, size, and address signals asserted.

2. The user logic requests a second read to a different address, again of size 1 (4 on the memory side). The controller is able to buffer up to four requests so the local_ready signal stays high and the request is accepted.

Figure 3–9. Half Rate Read, Native Interface Mode

Note to Figure 3–9:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

phy_clk

Local Interface

local_address

local_size 1

local_read_req

local_rdata

ddr_a

ddr_ba 0

control_doing_read

control_rdata

ddr_cs_n

DDR Command (1)

mem_clk

mem_addr

mem_ba

mem_cs_n

Mem Command (1)

mem_dq

mem_dqs

PHY Memory Interface

BBAA DDCC FFEE

00 0201

local_ready

local_rdata_valid

00 04 08

NOP RD NOP

BBAA DDCC FFEE

control_rdata_valid

00 04 08

0

NOP RD NOP

A A B B C C DD E E F F

Controller - PHY Interface

[1] [2] [3] [8][4] [5] [6] [7]

local_write_req

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Chapter 3: Functional Description 3–25Interfaces and Signals

3. The user logic requests a third read to a different address, of size 1 (4 on the memory side). The local_ready signal remains asserted, which indicates that the controller has accepted the request.

4. The controller issues the necessary memory command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

5. The controller asserts the control_doing_rd signal to indicate to the ALTMEMPHY megafunction how many clock cycles of read data it should expect. The ALTMEMPHY megafunction uses the control_doing_rd signal to enable its capture registers for the expected duration of the memory burst.

f See the “Handshake Mechanism Between Read Commands and Read Data” section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for more details of this interface.

6. The ALTMEMPHY megafunction issues the read commands to the memory and captures the read data from the memory.

7. The ALTMEMPHY megafunction returns data to the controller after resynchronizing it to the phy_clk domain by asserting the control_rdata_valid signal when there is valid read data on the control_rdata bus.

8. The controller returns the read data to the user by asserting the local_rdata_valid signal when there is valid read data on the local_rdata bus. If Enable error correction and detection logic is disabled, there is no delay between the control_rdata and the local_rdata buses. If there is ECC logic in the controller, there is one or three clock cycles of delay between the control_rdata and local_rdata buses.

Half Rate Read, Avalon-MM Interface Mode—Non-Consecutive ReadFigure 3–10 on page 3–26 shows three consecutive read requests of the same burst size. In half-rate mode, the controller allows you to use burst size 1, which corresponds to a complete memory burst of 4.

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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3–26 Chapter 3: Functional DescriptionInterfaces and Signals

Figure 3–10. Half Rate Read, Avalon-MM Interface Mode—Non-Consecutive Read

Note to Figure 3–10:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

phy_clk

Local Interface

Controller - PHY Interface

local_address

local_size

local_read_req

local_ready

local_rdata_valid

local_rdata

local_be

ddr_a

ddr_ba

ddr_cs_n

DDR Command (1)

control_doing_rd[0]

control_rdata

control_rdata_valid

control_be

PHY Memory Interface

mem_clk

mem_addr

mem_ba

mem_cs_n

Mem Command (1)

mem_dq

mem_dqs[0]

4 802 804 806 808 0

1

F BBAA EEDD GGFF IIHH

0 10 0 8 0 8 10 18 20 28 0

0 RD PCH ACT RD

FF

RD RD RD RD

BBAA

10 0 8 0 8 10 18 20 28 0

PCH ACT NOP

0 A A BB 0 D D E E F F G G H H I I J J K K LL 0

80A

RD RD RDRD

[2] [3] [4] [5] [9] [11] [13] [8] [16][1]

[6] [10] [12] [14] [7] [15]

RDRD

GGFF IIHHEEDD

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Chapter 3: Functional Description 3–27Interfaces and Signals

The following sequence corresponds with the numbered items in Figure 3–10.

1. The user logic requests the first read by asserting local_read_req signal, and the size and address for this read. In this example, the request is a burst length of 1 to local address 0x000004. This local address is mapped to the following memory address in half-rate mode:

mem_row_address = 0x0000

mem_col_address = 0x0004<<2 = 0x0010

mem_bank_address = 0x00

2. The user logic initiates a second read to a different memory row within the same bank. The request for the second write is a burst length of 1. In this example, the user logic continues to request subsequent reads to addresses 0x000804, 0x000806, 0x000808, and 0x00080A. The controller continues to accept commands until the command queue is full. When the command queue is full, the controller deasserts the local_ready signal. The starting address 0x000804 is mapped to the following memory address in half-rate mode:

mem_row_address = 0x0008

mem_col_address = 0x0002<<2 = 0x0008

mem_bank_address = 0x00

3. When the command queue is full, the controller deasserts the local_ready signal to indicate that the controller has not accepted the command. The user logic must keep the read request, size, and address signal until the local_ready signal is asserted again.

4. The controller issues the first read memory command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

5. The controller asserts the control_doing_rd signal to indicate to the ALTMEMPHY megafunction the number of clock cycles of read data it must expect for the first read. The ALTMEMPHY megafunction uses the control_doing_rd signal to enable its capture registers for the expected duration of memory burst.

1 See the "Handshake Mechanism Between Read Commands and Read Data" section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for more details of this interface.

6. The ALTMEMPHY megafunction issues the first read command to the memory and captures the read data from the memory.

7. The ALTMEMPHY megafunction returns the first data read to the controller after resynchronizing the data to the phy_clk domain, by asserting the control_rdata_valid signal when there is valid read data on the control_rdata bus.

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3–28 Chapter 3: Functional DescriptionInterfaces and Signals

8. The controller returns the first read data to the user by asserting the local_rdata_valid signal when there is valid read data on the local_rdata bus. If Enable error correction and detection logic is disabled, there is no delay between the control_rdata and the local_rdata buses. If there is ECC logic in the controller, there is one or three clock cycles of delay between the control_rdata and local_rdata buses.

9. The controller issues a PCH command to close current memory row (0x0000) and allow the second read to a different memory row (0x0008).

10. The ALTMEMPHY megafunction issues the PCH commands to the memory.

11. The controller issues an ACT command to open the next memory row (0x0008).

12. The ALTMEMPHY megafunction issues the ACT commands to the memory.

13.The controller issues the second read memory command and column address (0x0008) to the ALTMEMPHY megafunction for it to send to the memory device.

14.The ALTMEMPHY megafunction issues the read commands to the memory.

15.The controller returns the second read data to the user by asserting the local_rdata_valid signal when there is valid read data on the local_rdata bus.

Full Rate, Native Interface Mode—Alternate Read-WriteFigure 3–11 on page 3–29 shows read, write, read, write operation in full-rate mode and using the Local Interface Protocol setting set to Native interface.

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Chapter 3: Functional Description 3–29Interfaces and Signals

Figure 3–11. Full Rate, Read-Write (Size 1), Read-Write (Size 2) Native Interface Mode

Note to Figure 3–11:

(1) DDR Command and Mem Command show the command that the command signals are issuing.

phy_clk

Local Interface

local_address

local_size

local_ready

local_rdata_valid

local_read_req

local_rdata

local_write_req

local_wdata_req

local_wdata

0 2 4 000000

1 2 1

AABB CCDD EEFF

00FF FFFF

Controller-PHY Interface

ddr_a

ddr_ba

ddr_cs_n[0]

DDR Command (1)

control_doing_rd[0]

control_rdata

control_rdata_valid

control_be

0000 4

RD NOP WR NOP RD NOP WR NOP

0000 8 0000 000010

control_dqs_burst[0]

FFFF 0FF FFFF

3

PHY Memory Interface

mem_clk

mem_addr

mem_ba

cs_n[0]

Mem Command (1)

mem_dm[0]

mem_dq

mem_dqs[0]

0

0

8

0000 4 0000 8 0000 0000

0

10

RD NOP WR NOP RD NOP WR NOP

[18][24][17][16][5][4] [12]

control_wdata

control_wdata_valid

000 AABB CCDD

[19][23][6][22][15][7][14][11][10][2][21][9] [3][20][13][8][1]

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The following sequence corresponds with the numbered items in Figure 3–11 on page 3–29.

1. The user logic requests the first read by asserting the read request signal. In this example, the request is a burst length of 1. The local_ready signal is asserted, which indicates that the controller has accepted this request, and the user logic can request another read or write in the following clock cycle.

2. The controller issues the first memory read command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

3. The controller asserts the control_doing_rd signal to indicate to the ALTMEMPHY megafunction how many clock cycles of read data it should expect. The ALTMEMPHY megafunction uses the control_doing_rd signal to enable its capture registers for the expected duration of the memory burst.

f See the “Handshake Mechanism Between Read Command and Read Data” section of the External DDR Memory PHY Interface Megafunction (ALTMEMPHY) User Guide for more details of this interface.

4. The ALTMEMPHY megafunction issues the first read commands to the memory and captures the read data from the memory.

5. The memory returns the first read data to the ALTMEMPHY megafunction (0xFF00).

6. The ALTMEMPHY megafunction returns the data to the controller by asserting control_rdata_valid.

7. The controller returns the first read data to the user logic by asserting the local_rdata_valid signal when there is a valid read data on the local_rdata bus.

8. The user logic requests the first write by asserting the write request signal. In this example, the request is a burst length of 1.

9. In native interface mode, the controller requests write data and byte enables from the user logic by asserting local_wdata_req. The local_wdata (0xAABB) and local_be signals must be presented within 1 clock cycle after the local_wdata_req is asserted.

10. The controller issues the first memory write command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

11. The controller asserts the control_wdata_valid signal to indicate to the ALTMEMPHY megafunction that valid write data and write data masks are present on the inputs to the ALTMEMPHY megafunction.

12. The ALTMEMPHY megafunction issues the write command and sends the first write data and write DQS to the memory.

13. The user logic requests the second read by asserting the read request signal. In this example, the request is a burst length of 2.

14. The controller issues the second memory read command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

15. The controller asserts the control_doing_rd signal to indicate to the ALTMEMPHY megafunction how many clock cycles of read data it should expect.

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16. The ALTMEMPHY megafunction issues the second read command to the memory and captures the read data from the memory.

17. The memory returns the second read data to the ALTMEMPHY megafunction.

18. The ALTMEMPHY megafunction returns data to the controller by asserting the control_rdata_valid signal.

19. The controller returns the second read data to user by asserting the local_rdata_valid signal when there is a valid read data on the local_rdata bus.

20. The user logic requests the second write by asserting the write request signal. In this example, the request is a burst length of 2.

21. In native interface mode, the controller requests write data and byte enables from the user logic by asserting local_wdata_req. The local_wdata (0xCCDD) and local_be signals must be presented one clock cycle after local_wdata_req is asserted.

22. The controller issues the second memory write command and address signals to the ALTMEMPHY megafunction for it to send to the memory device.

23. The controller asserts the control_wdata_valid signal to indicate to the ALTMEMPHY megafunction that valid write data and write data masks are present on the inputs to the ALTMEMPHY megafunction.

24. The ALTMEMPHY megafunction issues the second write command and sends the second write data and write DQS to the memory.

User Refresh ControlFigure 3–12 shows the user refresh control interface. This feature allows you to control when the controller issues refreshes to the memory. This feature allows better control of worst case latency and allows refreshes to be issued in bursts to take advantage of idle periods.

Figure 3–12. User Refresh Control

Note to Figure 3–12:

(1) DDR Command shows the command that the command signals are issuing.

clk

reset_n

local_refresh_req

local_refresh_ack

ddr_cs_n

ddr_cke

ddr_a

ddr_ba

DDR Command (1)

ddr_ras_n

ddr_cas_n

ddr_we_n

FF 00 FF 00 FF 00 FF00

FF

0000 0400 00000400

0

NOP PCH NOP ARF NOP ARF NOPARF

Controller Interface

Local Interface

[1] [2] [4][3]

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The following sequence corresponds with the numbered items in Figure 3–12.

1. The user logic asserts the refresh request signal to indicate to the controller that it should perform a refresh. The state of the read and write requests signal does not matter as the controller gives priority to the refresh request (although it completes any currently active reads or writes).

2. The controller asserts the refresh acknowledge signal to indicate that it has sent a refresh command to the ALTMEMPHY megafunction. The exact time that the refresh command occurs on the memory interface depends on the ALTMEMPHY megafunction command output latency. This signal is still available even if the Enable user auto-refresh controls option is not turned on, allowing the user logic to track when the controller issues refreshes.

3. The user logic keeps the refresh request signal asserted to indicate that it wishes to perform another refresh request.

The controller again asserts the refresh acknowledge signal to indicate that it has issued a refresh. At this point the user logic deasserts the refresh request signal and the controller continues with the reads and writes in its buffers.

Self-Refresh and Power-Down CommandsThis feature allows you to direct the controller to put the external memory device into a low-power state. There are two possible low-power states: self-refresh and power down. The controller supports both and manages the necessary memory timings to ensure that the data in the memory is maintained at all times.

The local interface input pins (local_powerdn_req, and local_self_rfsh_req) allow you to direct the controller to place the memory device in power-down or self-refresh mode, respectively. The local interface output pins (local_powerdn_ack, and local_self_rfsh_ack) allow the controller to acknowledge the request and also indicate the current state of the memory.

If either local_powerdn_ack or local_self_rfsh_ack signal is asserted, the memory is in the relevant low-power mode. Both pairs of signals follows the same basic protocol as shown in Figure 3–13 and Figure 3–14 in page 3–33. The self-refresh pair of signals follows the same timing and behavior as the power-down pair. The only difference is that the local_refresh_ack signal is not asserted in self-refresh mode as the controller does not refresh the memory when the memory is in self-refresh mode.

You must not assert both request signals at the same time. Undefined behavior occurs if both local_powerdn_req and local_self_rfsh_req are asserted simultaneously.

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Auto-Precharge CommandsThe auto-precharge read and auto-precharge write commands allow you to indicate to the memory device that this read or write command is the last access to the currently open row. The memory device automatically closes (auto-precharges) the page it is currently accessing so that the next access to the same bank is quicker. This command is particularly useful for applications that require fast random accesses.

Request an auto-precharge by asserting the local_autopch input at the same time you assert the local_read_req or local_write_req signal. The timing and rules of the local_autopch input follow the basic Avalon-MM interface specifications (refer to Avalon Interface Specifications). You can assert it anytime, but once you have asserted it, the signal must stay asserted until the local_ready signal is high, which indicates that the current request has been accepted.

Figure 3–13. Power-Down Mode

Notes to Figure 3–13:

(1) The user synchronously asserts the request signal to indicate that the controller should put the memory into the power-down state as soon as possible.

(2) Once the controller is able to issue the correct commands to put the memory into the power-down state, it responds by asserting the acknowledge signal.

(3) If you direct the controller to hold the memory in power-down mode for longer than a refresh cycle, the controller wakes the memory briefly to issue a refresh command at the required time. The local_refresh_ack signal indicates that this has happened - it is asserted for one clock cycle at approximately the same time as the refresh command is issued. If Enable user auto-refresh controls is turned on, you must issue refresh requests via the local_refresh_req input at the appropriate time, even if you have also requested power-down mode.

(4) The controller holds the memory in power-down mode until you deassert the request signal.(5) The controller deasserts the acknowledge signal once it has released the memory from the power-down state and once the required timing

parameters are met.

Figure 3–14. Self-Refresh Mode

Notes to Figure 3–14:

(1) You synchronously assert the request signal to indicate that the controller should put the memory into the self-refresh state as soon as possible.(2) Once the controller is able to issue the correct commands to put the memory into the self-refresh state, it responds by asserting the acknowledge

signal.(3) The controller holds the memory in self-refresh mode until you deassert the request signal.(4) The controller deasserts the acknowledge signal once it has released the memory from the self-refresh state and once the required timing

parameters is met.

clk

local_powerdn_req

local_powerdn_ack

local_refresh_ack

(1)

(2)

(3)

(4)

(5)

clk

local_self_rfsh_req

local_self_rfsh_ack

(1)

(2)

(3)

(4)

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1 If your MegaCore variation is configured to support local burst sizes greater than one, note that local_autopch is ignored unless you request a complete burst. It is not possible to auto-precharge a partial burst to the memory.

DDR SDRAM Initialization Timing

f DDR SDRAM and DDR2 SDRAM initialization timing is different. For DDR2 SDRAM initialization timing, see “DDR2 SDRAM Initialization Timing” on page 3–36.

The DDR SDRAM high-performance controller initializes the SDRAM devices by issuing the following memory command sequence:

■ NOP (for 200 µs, programmable)

■ PCH

■ Extended LMR (ELMR)

■ LMR

■ NOP (for 200 clock cycles, fixed)

■ PCH

■ ARF

■ ARF

■ LMR

Figure 3–15 on page 3–35 shows a typical initialization timing sequence, which is described below. The length of time between the reset and the first PCH command should be 200 µs. The value that you specify for the Memory initialization time at power up (tINIt) setting in the MegaWizard interface is only used for hardware that you generate. The controller simulation model is created with a much shorter tINIT time to make simulation easier.

1 Do not set tINIT to zero.

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The following sequence corresponds with the numbered items in Figure 3–15.

1. A PCH command is sent to all banks by setting the precharge pin, the address bit a[10], or a[8] high.

2. An ELMR command is issued to enable the internal delay-locked loop (DLL) in the memory devices. An ELMR command is an LMR command with the bank address bits set to address the extended mode register.

3. An LMR command sets the operating parameters of the memory such as CAS latency and burst length. This LMR command also resets the internal memory device DLL. The DDR SDRAM high-performance controller allows 200 clock cycles to elapse after a DLL reset and before it issues the next command to the memory.

4. A further PCH command places all the banks in their idle state.

5. Two ARF commands must follow the PCH command.

6. The final LMR command programs the operating parameters without resetting the DLL.

After issuing the final LMR command, the memory controller hands over control of the memory to the ALTMEMPHY megafunction to allow it to carry out its calibration process.

f For more information, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

When the ALTMEMPHY megafunction has finished calibrating, the memory controller asserts the local_init_done signal, which shows that it has initialized the memory devices.

Figure 3–15. DDR SDRAM Device Initialization Timing

clk

ddr_cke

ddr_a

ddr_ba

ddr_cs_n

ddr_ras_n

ddr_cas_n

ddr_we_n

local_init_done

0 0

0 1 01

0 0 0 0 0 0 00

[1] [2] [3] [4] [6][5][5]

200 clock cycles

Key:P = PCHL = LMRA = ARF

DDR Command P L L P A A LL

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DDR2 SDRAM Initialization TimingThe DDR2 SDRAM high-performance controller initializes the memory devices by issuing the following command sequence:

■ NOP (for 200 µs, programmable)

■ PCH

■ ELMR, register 2

■ ELMR, register 3

■ ELMR, register 1

■ LMR

■ PCH

■ ARF

■ ARF

■ LMR

■ ELMR, register 1

■ ELMR, register 1

Figure 3–16 shows a typical DDR2 SDRAM initialization timing sequence, which is described below. The length of time between the reset and the clock enable signal going high should be 200 µs. The value that you choose for the Memory initialization time at power up (tINIt) setting in the MegaWizard interface is only used for hardware that you generate. The controller simulation model is created with a much shorter tINIT time to make simulation easier.

Figure 3–16. DDR2 SDRAM Device Initialization Timing

Note to Figure 3–16:

(1) local_init_done only goes high when calibration has completed.

Key:P = PCHL = LMRA = ARF

clk

ddr_cke

ddr_a

ddr_ba

ddr_cs_n

ddr_ras_n

ddr_cas_n

ddr_we_n

local_init_done

DDR Command

2 0 3 0 1 0 0 1 0 1 11

0 0 0 0 0 0 0

P L L L L P A A L N L LL

200 clock cycles

[1] [2] [3] [3] [4] [7][6][5] [7] [8] [9]

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The following sequence corresponds with the numbered items in Figure 3–16 on page 3–36.

1. The clock enable signal (CKE) is asserted 200 µs after coming out of reset.

2. The controller then waits 400 ns and then issues the first PCH command by setting the precharge pin, the address bit a[10] or a[8] high. The 400 ns is calculated by taking the number of clock cycles calculated by the wizard for the 200 µs delay and dividing this by 500. If a small initialization time is selected for simulation purposes, this delay is always at least 1 clock cycle.

3. Two ELMR commands are issued to load extend mode registers 2 and 3 with zeros.

4. An ELMR command is issued to extend mode register 1 to enable the internal DLL in the memory devices.

5. An LMR command is issued to set the operating parameters of the memory such as CAS latency and burst length. This LMR command is also used to reset the internal memory device DLL.

6. A further PCH command places all the banks in their idle state.

7. Two ARF commands must follow the PCH command.

8. A final LMR command is issued to program the operating parameters without resetting the DLL.

9. 200 clock cycles after step 5, two ELMR commands are issued to set the memory device off-chip driver (OCD) impedance to the default setting.

After issuing the final ELMR command, the memory controller hands over control of the memory to the ALTMEMPHY megafunction to allow it to carry out its calibration process.

f For more information, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

When ALTMEMPHY megafunction has finished calibrating, the memory controller asserts the local_init_done signal, which shows that it has initialized the memory devices.

SignalsTable 3–6 shows the clock and reset signals.

Table 3–6. Clock and Reset Signals (Part 1 of 2)

Name Direction Description

global_reset_n Input The asynchronous reset input to the controller. All other reset signals are derived from resynchronized versions of this signal. This signal holds the complete ALTMEMPHY megafunction, including the PLL, in reset while low.

pll_ref_clk Input The reference clock input to PLL.

phy_clk Output The system clock that the ALTMEMPHY megafunction provides to the user. All user inputs to and outputs from the DDR high-performance controller must be synchronous to this clock.

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reset_phy_clk_n Output The reset signal that the ALTMEMPHY megafunction provides to the user. It is asserted asynchronously and deasserted synchronously to phy_clk clock domain.

aux_full_rate_clk Output An alternative clock that the ALTMEMPHY megafunction provides to the user. This clock always runs at the same frequency as the external memory interface. In half-rate mode, this clock is twice the frequency of the phy_clk and can be used whenever a 2x clock is required. In full-rate mode, this clock is driven by the same PLL output as the phy_clk signal.

aux_half_rate_clk Output An alternative clock that the ALTMEMPHY megafunction provides to the user. This clock always runs at half the frequency as the external memory interface. In full-rate mode, this clock is half the frequency of the phy_clk and can be used, for example to clock the user side of a half-rate bridge. In half-rate mode, this clock is driven by the same PLL output as the phy_clk signal.

dll_reference_clk Output Reference clock to feed to an externally instantiated DLL.

reset_request_n Output Reset request output that indicates when the PLL outputs are not locked. Use this signal as a reset request input to any system-level reset controller you may have. This signal is always low while the PLL is locking, and so any reset logic using it is advised to detect a reset request on a falling edge rather than by level detection.

soft_reset_n Input Edge detect reset input intended for SOPC Builder use or to be controlled by other system reset logic. It is asserted to cause a complete reset to the PHY, but not to the PLL used in the PHY.

oct_ctl_rs_value Input ALTMEMPHY signal that specifies the serial termination value. Should be connected to the ALT_OCT megafunction output “Seriesterminationcontrol”.

oct_ctl_rt_value Input ALTMEMPHY signal that specifies the parallel termination value. Should be connected to the ALT_OCT megafunction output “Parallelterminationcontrol”.

dqs_delay_ctrl_import Input Allows the use of DLL in another ALTMEMPHY instance in this ALTMEMPHY instance. Connect the export port on the ALTMEMPHY instance with a DLL to the import port on the other ALTMEMPHY instance.

Table 3–6. Clock and Reset Signals (Part 2 of 2)

Name Direction Description

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Chapter 3: Functional Description 3–39Interfaces and Signals

Table 3–7 on page 3–40 shows the DDR and DDR2 SDRAM high-performance controller local interface signals.

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Table 3–7. Local Interface Signals (Part 1 of 4)

Signal Name Direction Description

local_address[] Input Memory address at which the burst should start.

■ Full rate controllers

The width of this bus is sized using the following equation:

For one chip select:

width = bank bits + row bits + column bits – 1

For multiple chip selects:

width = chip bits + bank bits + row bits + column bits – 1

If the bank address is 2 bits wide, row is 13 bits wide and column is 10 bits wide, then the local address is 24 bits wide. To map local_address to bank, row and column address:

local_address[23:22] = bank address [1:0]

local_address[21:9] = row address [13:0]

local_address [8:0] = col_address[9:1]

The least significant bit (LSB) of the column address (multiples of four) on the memory side is ignored, because the local data width is twice that of the memory data bus width.

■ Half rate controllers

The width of this bus is sized using the following equation:

For one chip select:

width = bank bits + row bits + column bits – 2

For multiple chip selects:

width = chip bits + bank bits + row bits + column bits – 2

If the bank address is 2 bits wide, row is 13 bits wide and column is 10 bits wide, then the local address is 23 bits wide. To map local_address to bank, row and column address:

local_address is 23 bits wide

local_address[22:21] = bank address

local_address[20:8] = row address [13:0]

local_address [7:0] = col_address[9:2]

Two LSBs of the column address on the memory side are ignored, because the local data width is four times that of the memory data bus width.

1 You can get the information on address mapping from the <variation_name>_example_top.v or vhd file.

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local_be[] Input Byte enable signal, which you use to mask off individual bytes during writes. local_be is active high; mem_dm is active low.

To map local_wdata and local_be to mem_dq and mem_dm, consider a full-rate design with 32-bit local_wdata and 16-bit mem_dq.

Local_wdata = < 22334455 >< 667788AA >< BBCCDDEE >

Local_be = < 1100 >< 0110 >< 1010 >

These values map to:

Mem_dq = <4455><2233><88AA><6677><DDEE><BBCC>

Mem_dm = <1 1 ><0 0 ><0 1 ><1 0 ><0 1 ><0 1 >

local_burstbegin Input Avalon burst begin strobe, which indicates the beginning of an Avalon burst. This signal is only available when the local interface is an Avalon-MM interface and the memory burst length is greater than 2. Unlike all other Avalon-MM signals, the burst begin signal does not stay asserted if local_ready is deasserted.

local_read_req Input Read request signal.

You cannot assert read request and write request signal at the same time.

local_refresh_req Input User controlled refresh request. If Enable user auto-refresh controls is turned on, local_refresh_req becomes available and you are responsible for issuing sufficient refresh requests to meet the memory requirements. This option allows complete control over when refreshes are issued to the memory including ganging together multiple refresh commands. Refresh requests take priority over read and write requests unless they are already being processed.

local_size[] Input Controls the number of beats in the requested read or write access to memory, encoded as a binary number. The range of values depend on the memory burst length and whether you select full or half rate in the wizard.

If you select a memory burst length 4 and half rate, the local burst length is 1 and so local_size should always be driven with 1.

If you select a memory burst length 4 and full rate, the local burst length is 2 and you should set the local_size to either 1 or 2 for each read or write request.

local_wdata[] Input Write data bus. The width of local_wdata is twice that of the memory data bus for a full rate controller; four times the memory data bus for a half rate controller.

local_write_req Input Write request signal.

You cannot assert read request and write request signal at the same time.

local_init_done Output When the memory initialization, training, and calibration are complete, the ALTMEMPHY sequencer asserts the ctrl_usr_mode_rdy signal to the memory controller, which then asserts this signal to indicate that the memory interface is ready to be used. Read and write requests are still accepted before local_init_done is asserted, however they are not issued to the memory until it is safe to do so.

Table 3–7. Local Interface Signals (Part 2 of 4)

Signal Name Direction Description

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local_rdata[] Output Read data bus. The width of local_rdata is twice that of the memory data bus for a full rate controller; four times the memory data bus for a half rate controller.

local_rdata_error Output Asserted if the current read data has an error. This signal is only available if the Enable error detection and correction logic is turned on.

local_rdata_valid Output Read data valid signal. The local_rdata_valid signal indicates that valid data is present on the read data bus.

local_ready Output The local_ready signal indicates that the DDR or DDR2 SDRAM high-performance controller is ready to accept request signals. If local_ready is asserted in the clock cycle that a read or write request is asserted, that request has been accepted. The local_ready signal is deasserted to indicate that the DDR or DDR2 SDRAM high-performance controller cannot accept any more requests. The controller is able to buffer four read or write requests.

local_refresh_ack Output Refresh request acknowledge, which is asserted for one clock cycle every time a refresh is issued. Even if the Enable user auto-refresh controls option is not selected, local_refresh_ack still indicates to the local interface that the controller has just issued a refresh command.

local_wdata_req Output Write data request signal, which indicates to the local interface that it should present valid write data on the next clock edge. This signal is only required when the controller is operating in Native interface mode.

local_autopch_req Input User control of precharge. If Enable auto precharge control is turned on, local_autopch_req becomes available and you can request the controller to issue an auto-precharge write or auto-precharge read command. These commands cause the memory to issue a precharge command to the current bank at the appropriate time without an explicit precharge command from the controller. This is particularly useful if you know the current read or write is the last one you intend to issue to the currently open row. The next time you need to use that bank, the access could be quicker as the controller does not need to precharge the bank before activating the row you wish to access.

local_powerdn_req Input User control of the power down feature. If Enable power down controls option is enabled, you can request that the controller place the memory devices into a power-down state as soon as it can without violating the relevant timing parameters and responds by asserting the local_powerdn_ack signal. You can hold the memory in the power-down state by keeping this signal asserted. The controller brings the memory out of the power-down state to issue periodic auto-refresh commands to the memory at the appropriate interval if you hold it in the power-down state. You can release the memory from the power-down state at any time by deasserting the local_powerdn_ack signal once it has successfully brought the memory out of the power-down state.

local_powerdn_ack Output Power-down request acknowledge signal. This signal is asserted and deasserted in response to the local_powerdn_req signal from the user.

Table 3–7. Local Interface Signals (Part 3 of 4)

Signal Name Direction Description

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Chapter 3: Functional Description 3–43Interfaces and Signals

Table 3–8 shows the DDR and DDR2 SDRAM interface signals.

Table 3–9 shows the ECC controller signals.

local_self_rfsh_req Input User control of the self-refresh feature. If Enable self-refresh controls option is enabled, you can request that the controller place the memory devices into a self-refresh state by asserting this signal. The controller places the memory in the self-refresh state as soon as it can without violating the relevant timing parameters and responds by asserting the local_self_rfsh_ack signal. You can hold the memory in the self-refresh state by keeping this signal asserted. You can release the memory from the self-refresh state at any time by deasserting the local_self_rfsh_req signal and the controller responds by deasserting the local__self_rfsh_ack signal once it has successfully brought the memory out of the self-refresh state.

local_self_rfsh_ack Output Self refresh request acknowledge signal. This signal is asserted and deasserted in response to the local_self_rfsh_req signal from the user.

Table 3–7. Local Interface Signals (Part 4 of 4)

Signal Name Direction Description

Table 3–8. DDR and DDR2 SDRAM Interface Signals

Signal Name Direction Description

mem_dq[] Bidirectional Memory data bus. This bus is half the width of the local read and write data busses.

mem_dqs[] Bidirectional Memory data strobe signal, which writes data into the DDR or DDR2 SDRAM and captures read data into the Altera device.

mem_clk (1) Bidirectional Clock for the memory device.

mem_clk_n (1) Bidirectional Inverted clock for the memory device.

mem_a[] Output Memory address bus.

mem_ba[] Output Memory bank address bus.

mem_cas_n Output Memory column address strobe signal.

mem_cke[] Output Memory clock enable signals.

mem_cs_n[] Output Memory chip select signals.

mem_dm[] Output Memory data mask signal, which masks individual bytes during writes.

mem_odt[] Output Memory on-die termination control signal (DDR2 SDRAM only).

mem_ras_n Output Memory row address strobe signal.

mem_we_n Output Memory write enable signal.

Note to Table 3–8:

(1) The mem_clk signals are output only signals from the FPGA. However, in the Quartus II software they must be defined as bidirectional (INOUT) I/Os to support the mimic path structure that the ALTMEMPHY megafunction uses.

Table 3–9. ECC Controller Signals (Part 1 of 2)

Signal Name Direction Description

ecc_addr[] Input Address for ECC controller.

ecc_be[] Input ECC controller byte enable.

ecc_interrupt Output Interrupt from ECC controller.

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3–44 Chapter 3: Functional DescriptionInterfaces and Signals

ecc_rdata[] Output Return data from ECC controller.

ecc_read_req Input Read request for ECC controller.

ecc_wdata[] Input ECC controller write data.

ecc_write_req Input Write request for ECC controller.

Table 3–9. ECC Controller Signals (Part 2 of 2)

Signal Name Direction Description

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4. Parameter Settings

Memory SettingsThe Memory Settings page provides the same options as the ALTMEMPHY megafunction Memory Settings page.

f For more information on the memory settings, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

PHY SettingsBoard skew is the skew across all the memory interface signals, which includes clock, address, command, data, mask, and strobe signals.

f For more information on the PHY settings, refer to the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

Controller SettingsTable 4–1 shows the options provided in the Controller Settings page.

Table 4–1. Controller Settings

Parameter Range Description

Enable error correction and detection logic

On or off Turn on to add the optional error correction coding (ECC) to the design, see “ECC” on page 3–7.

Enable user auto-refresh controls

On or off Turn on for user control of the refreshes, see “User Refresh Control” on page 3–31.

Enable auto-precharge control

On or off Turn on if you need fast random access, see “Auto-Precharge Commands” on page 3–33

Enable power down controls

On or off Turn on to enable the controller to allow you to place the external memory device in a power-down mode, see “Self-Refresh and Power-Down Commands” on page 3–32

Enable self-refresh controls On or off Turn on to enable the controller to allow you to place the external memory device in a self-refresh mode, see “Self-Refresh and Power-Down Commands” on page 3–32

Local Interface Protocol Native or Avalon Memory-Mapped

Specifies the local side interface between the user logic and the memory controller. The Avalon Memory-Mapped (MM) interface allows you to easily connect to other Avalon-MM peripherals.

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4–2 Chapter 4: Parameter SettingsController Settings

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A. ECC Register Description

This appendix describes the ECC registers and the register bits.

ECC RegistersTable A–1 shows the ECC registers.

Table A–1. ECC Registers (Part 1 of 2)

Name AddressSize (Bits) Attribute Default Description

Control word specifications 00 32 R/W 0000000F This register contains all commands for the ECC functioning.

Maximum single-bit error counter threshold

01 32 R/W 00000001 The single-bit error counter increments (when a single-bit error occurs) until the maximum threshold, as defined by this register. When this threshold is crossed, the ECC generates an interrupt.

Maximum double-bit error counter threshold

02 32 R/W 00000001 The double-bit error counter increments (when a double-bit error occurs) until the maximum threshold, as defined by this register. When this threshold is crossed, the ECC generates an interrupt.

Current single-bit error count

03 32 RO 00000000 The single-bit error counter increments (when a single-bit error occurs) until the maximum threshold. You can find the value of the count by reading this status register.

Current double-bit error count

04 32 RO 00000000 The double-bit error counter increments (when a double-bit error occurs) until the maximum threshold. You can find the value of the count by reading this status register.

Last or first single-bit error error address

05 32 RO 00000000 This status register stores the last single-bit error error address. It can be cleared using the control word clear. If bit 10 of the control word is set high, the first occurred address is stored.

Last or first double-bit error error address

06 32 RO 00000000 This status register stores the last double-bit error error address. It can be cleared using the control word clear. If bit 10 of the control word is set high, the first occurred address is stored.

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A–2ECC Registers

Last single-bit error error data

07 32 RO 00000000 This status register stores the last single-bit error error data word. As the data word is an Nth multiple of 64, the data word is stored in a 2N-deep, 32-bit wide FIFO buffer with the least significant 32-bit sub word stored first. It can be cleared individually by using the control word clear.

Last single-bit error syndrome

08 32 RO 00000000 This status register stores the last single-bit error syndrome, which specifies the location of the error bit on a 64-bit data word. As the data word is an Nth multiple of 64, the syndrome is stored in a N deep, 8-bit wide FIFO buffer where each syndrome represents errors in every 64-bit part of the data word. The register gets updated with the correct syndrome depending on which part of the data word is shown on the last single-bit error error data register. It can be cleared individually by using the control word clear.

Last double-bit error error data

09 32 RO 00000000 This status register stores the last double-bit error error data word. As the data word is an Nth multiple of 64, the data word is stored in a 2N deep, 32-bit wide FIFO buffer with the least significant 32-bit sub word stored first. It can be cleared individually by using the control word clear.

Interrupt status register 0A 5 RO 00000000 This status register stores the interrupt status in four fields (see Table A–3). These status bits can be cleared by writing a 1 in the respective locations.

Interrupt mask register 0B 5 WO 00000001 This register stores the interrupt mask in four fields (see Table A–4).

Single-bit error location status register

0C 32 R/W 00000000 This status register stores the occurrence of single-bit error for each 64-bit part of the data word in every bit (see Table A–5). These status bits can be cleared by writing a 1 in the respective locations.

Double-bit error location status register

0D 32 R/W 00000000 This status register stores the occurrence of double-bit error for each 64-bit part of the data word in every bit (see Table A–6). These status bits can be cleared by writing a 1 in the respective locations.

Table A–1. ECC Registers (Part 2 of 2)

Name AddressSize (Bits) Attribute Default Description

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A–3Register Bits

Register BitsTable A–2 shows the control word specification register.

Table A–3 shows the interrupt status register.

Table A–4 shows the interrupt mask register.

Table A–2. Control Word Specification Register

Bit Name Direction Description

0 Count single-bit error Decoder-corrector When 1, count single-bit errors.

1 Correct single-bit error Decoder-corrector When 1, correct single-bit errors.

2 Double-bit error enable Decoder-corrector When 1, detect all double-bit errors and increment double-bit error counter.

3 Reserved N/A Reserved for future use.

4 Clear all status registers Controller When 1, clear counters single-bit error and double-bit error status registers for first and last error address.

5 Reserved N/A Reserved for future use.

6 Reserved N/A Reserved for future use.

7 Counter clear on read Controller When 1, enables counters to clear on read feature.

8 Corrupt ECC enable Controller When 1, enables deliberate ECC corruption during encoding, to test the ECC.

9 ECC corruption type Controller When 0, creates single-bit errors in all ECC codewords; when 1, creates double-bit errors in all ECC codewords.

10 First or last error Controller When 1, stores the first error address rather than the last error address of single-bit error or double-bit error.

11 Clear interrupt Controller When 1, clears the interrupt.

Table A–3. Interrupt Status Register

Bit Name Description

0 Single-bit error When 1, single-bit error occurred.

1 Double-bit error When 1, double-bit error occurred.

2 Maximum single-bit error When 1, single-bit error maximum threshold exceeded.

3 Maximum double-bit error When 1, double-bit error maximum threshold exceeded.

4 Double-bit error during read-modify-write

When 1, double-bit error occurred during a read modify write condition. (partial write).

Others Reserved Reserved.

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A–4Register Bits

Table A–5 shows the single-bit error location status register.

Table A–6 shows the double-bit error location status register.

Table A–4. Interrupt Mask Register

Bit Name Description

0 Single-bit error When 1, masks single-bit error.

1 Double-bit error When 1, masks double-bit error.

2 Maximum single-bit error When 1, masks single-bit error maximum threshold exceeding condition.

3 Maximum double-bit error When 1, masks double-bit error maximum threshold exceeding condition.

4 Double-bit error during read-modify-write

When 1, masks interrupt when double-bit error occurs during a read-modify-write condition. (partial write).

Others Reserved Reserved.

Table A–5. Single-Bit Error Location Status Register

Bit Name Description

Bits N – 1 down to 0 Interrupt When 0, no single-bit error; when 1, single-bit error occurred in this 64-bit part.

Others Reserved Reserved.

Table A–6. Double-Bit Error Location Status Register

Bit Name Description

Bits N-1 down to 0 Cause of Interrupt When 0, no double-bit error; when 1, double-bit error occurred in this 64-bit part.

Others Reserved Reserved.

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B. DDR and DDR2 SDRAM HP ControllerFunctional Simulation

Verification methods are important when designing an external memory interface. The following options are available:

■ Board level verification: using IBIS/SI tools. (Refer AN 408: DDR2 Memory Interface Termination, Drive Strength and Loading Design Guidelines.)

■ Simplified example designs using SignalTap II logic analyzer. (Refer AN 380: Test DDR or DDR2 SDRAM Interfaces on Hardware - Using the Example Driver.)

■ Register transfer level (RTL) or functional simulation; RTL simulation is powerful for debugging the interaction and performance between DDR and DDR2 SDRAM high-performance controller and its associated memory devices. Board level debugging of signals within the system can be difficult. RTL simulation eases this problem, allowing you to functionally probe every register and signal within a design. You can use the ModelSim software to simulate the DDR and DDR2 SDRAM high-performance controller using automatically generated simulation environments created directly by the MegaCore function.

This appendix describes the RTL simulation environment using a Cyclone III DDR and DDR2 SDRAM high-performance controller example design. It also describes the process of running the simulation environment from within the ModelSim tool flow.

Getting StartedThis appendix assumes that you have prior experience with the Quartus II software and are familiar with ModelSim. In addition, the following software is required to complete the steps.

■ Quartus II software version 8.0 or later

■ ModelSim-AE 6.1g or later, or ModelSim PE, SE

■ DDR and DDR2 SDRAM High-Performance Controller MegaCore functions

f For more information about the DDR3 SDRAM high-performance controller, refer to the DDR3 SDRAM High-Performance Controller User Guide and for ALTMEMPHY megafunction, see the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

DDR and DDR2 SDRAM High-Performance Controller Example SimulationThis design example uses a DDR or DDR2 SDRAM high-performance controller, Cyclone III device, and half-rate implementation on a Windows-based system. The principles in this appendix are the same for any other mode of the Altera DDR and DDR2 SDRAM high-performance ALTMEMPHY-based memory controllers.

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B–2DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Creating A Simulation Testbench EnvironmentThe Megawizard Plug-In Manager automatically generates an example testbench. This flow is utilized as the simplest way to create a complete testbench, including an example driver, a memory controller, ALTMEMPHY megafunction, and a memory model.

1 The DDR and DDR2 SDRAM High-Performance Controller MegaCore functions include the ability to generate an example testbench, whereas the megafunctions such ALTMEMPHY as do not.

Creating the Example ProjectFollow the “MegaWizard Plug-In Manager Flow” on page 2–4 to create an example project targeting your chosen device family. This example uses the EP3C40F48C6 device. However, as the example only uses the Quartus II software to generate the MegaCore variation and launch ModelSim-AE, the specific device is not important.

The example project is created in Verilog HDL although you can substitute with VHDL. Most memory vendors provide their memory models in Verilog HDL. ModelSim-AE only simulates a single HDL language at a time. The Altera “generic” memory model is more memory efficient in Verilog HDL. The generic memory model in VHDL can cause “out of memory” errors for 32 bit or wider interfaces.

Configuring the DDR2 SDRAM High-Performance ControllerOnce you have created the example project, launch the Megawizard Plug-In Manager and follow these steps:

1. Expand the Memory Controllers folder under the Interfaces folder.

2. Click DDR2 SDRAM High-Performance Controller.

3. In the Memory Settings tab on the Parameter Settings page, under General Settings set the following values:

a. Set the Device family to Cyclone III. (This should already be default.)

b. Set the Speed grade to 6.

c. Select 100 MHz for PLL reference clock frequency.

d. Select 200 MHz for Memory clock frequency.

e. Select Half for Local interface clock frequency.

4. Under Show in ‘Memory Presets’ List, set the following values:

a. Select Micron for Memory Vendor.

b. Select Discrete Device for Memory format.

c. Set Maximum memory frequency to 333.333 MHz.

5. Under Memory Presets, select Micron MT47H64M8CB-3.

6. Click Modify parameters and in the Preset Editor page, select 1 pair for the Outlook clock pairs from FPGA.

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B–3DDR and DDR2 SDRAM High-Performance Controller Example Simulation

1 When specifying PLL reference clock frequency and Memory clock frequency, it is important to set values that result in small M and N values within the PLL. For example, setting 133.33 MHz, 266.66 MHz, 333.33 MHz, or 166.67 MHz may result in smaller M and N values compared to setting 133.0 MHz, 267.0 MHz, 333.0 MHz, or 167.0 MHz.

f Refer to the ALTPLL Megafunction User Guide for further information on PLL.

RTL Simulation Options in the DDR2 SDRAM High-Performance ControllerThe DDR2 SDRAM high-performance memory controller generates an example testbench (<variation name> example_top_tb.v/.vhd) and a generic SDRAM model (<variation name>_mem_model.v/.vhd).

The example testbench instantiates the example top level design, which includes the example driver generated by the MegaWizard interface that supports functional verification. This example testbench is also the ideal starting platform for if you want to create a more specific custom testbench for your designs.

To generate the MegaCore function, follow these steps.

1. Enable Generate simulation model on the EDA tab. This enables the generation of fast functional simulation models of the encrypted blocks within the controller and ALTMEMPHY megafunction (<variation name>_auk_ddr_hp_controller_wrapper.vo/vho and <variation name>_phy_alt_mem_phy_sequencer_wrapper.vo/vho).

2. Click Finish to generate the required IP configuration.

3. Review the required steps in the Generation Report, see Figure B–1.

Figure B–1. IP Generation Report

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B–4DDR and DDR2 SDRAM High-Performance Controller Example Simulation

4. Set the top-level entity to the example project.

a. On the File menu, click Open.

b. Browse to <variation name>_example_top.v or .vhd file and click Open.

c. On the Project menu, click Set as Top-Level Entity.

Setting Up Quartus II NativeLinkTo set up Quartus II NativeLink, perform the following steps:

1. On the Assignments menu, click Settings. In the Category list, expand EDA Tool Settings folder and click Simulation.

2. On the Simulation page, make the following selection:

a. From the Tool name list, select ModelSim-Altera.

b. Under EDA Netlist Writer options, in the Format for output netlist list, select Verilog.

c. In NativeLink settings, select Compile test bench and click Test Benches.

d. Click New at the Test Benches page to create a testbench.

3. In the New Test Bench Settings dialog box, do the following:

a. In Test bench name, type ddrhp_example_top_tb.

b. In Top level module in test bench, type the name of the automatically generated testbench, ddrhp_example_top_tb.

c. In Design instance name in test bench, type dut .

d. Under Simulation period, set End simulation at to 500 µs.

1 You must enter a simulation run length of at least 500 µs as initialization and calibration sequence can take a considerable length of time to complete.

e. In the File name field, browse to the location of the testbench (ddrhp_example_top_tb.v) and the memory model (ddrhp_mem_model.v) files, click Open and then click Add.

f. Select the files added and click OK.

4. On the Processing menu, point to Start and click Start Analysis & Elaboration to start analysis.

1 Simulation requires the <my_variation name>_phy_alt_mem_phy_pll_mif to be located in the testbench directory. NativeLink automatically copies the .mif file to the required testbench directory if you add the .mif file to your Quartus II Project Files list.

5. On the Tools menu, point to Run EDA Simulation Tool and select EDA RTL Simulation to run simulation. ModelSim-AE opens and the example testbench runs successfully. The ModelSim Transcript window concludes with the message ...SIMULATION PASSED... see Figure B–2.

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B–5DDR and DDR2 SDRAM High-Performance Controller Example Simulation

1 If you have any problems running the simulation, ensure that the Quartus II EDA Tool Options are configured correctly for your simulation environment. On the Tools menu, click Options. In the Category list, click EDA Tool Options and verify the locations of the executable files.

6. If your Quartus II Project appears to be configured correctly but the example testbench still fails, check the known issues on the Knowledge Database page before filing a service request.

Understanding the Example Design and TestbenchThe MegaWizard Plug-In Manager helps you create an example design that shows how to instantiate and connect both the DDR or DDR2 SDRAM high-performance controller, and the ALTMEMPHY megafunction. This example allows you to quickly create a working design.

The MegaCore function uses this example design in a testbench by connecting it to a generic memory model and providing the required clock_source and global_reset_n stimulus automatically.

Testbench DescriptionThe example design consists of the following blocks or components:

■ ALTMEMPHY megafunction

■ memory controller

■ example driver

The respective DDR and DDR2 SDRAM high-performance controllers provide a complete example of how to connect the ALTMEMPHY megafunction to a third party controller. Refer to the “Integrating with Your Own Controller” section of the External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY) for further information.

Figure B–2. ModelSim-AE Simulation Passed Transcript Window

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B–6DDR and DDR2 SDRAM High-Performance Controller Example Simulation

The generated example driver uses a simple LFSR structure to write data to the attached memory device (or model) and, read it back to perform a comparison between the read and write data. The example driver can be used as a placeholder for a customer specific design. It can also be used to check if your memory interface is working in hardware.

f For further information refer to AN 380: Test DDR or DDR2 SDRAM Interfaces on Hardware Using the Example Driver.

The auto-generated generic SDRAM model may be used as a placeholder for a specific memory vendor supplied model. For information on how to replace the generic model with a vendor specific model, refer to “Perform RTL/Functional Simulation (Optional)” in AN 328: Interfacing DDR2 SDRAM with Stratix II, Stratix II GX, and Arria GX Devices.

Figure B–3 on page B–6 shows the testbench and the example design.

Running the Example Testbench from Your SimulatorAfter you generate the testbench, you can run it directly from your simulation tool.

1 Before running it directly from your simulation tool, you must run the simulation once from the Quartus II software to generate the *.do ModelSim file. To do this, click Run EDA Simulation Tool on the Tools menu and select EDA RTL Simulation.

You can follow these steps to run the simulation from your simulation tool:

1. Launch ModelSim-Altera.

2. On the File menu, click Change Directory.

3. Select <your project name>/simulation/modelsim and click OK.

4. On the Tools menu, click Execute Macro.

Figure B–3. Example Testbench Block Diagram

pnf_per_byte

pnf

Example Design / dut

Example Testbench

DD

R S

DR

AM

Model

High-Performance Controller

EncryptedCalibration Logic

Exam

ple D

river

Clockand

Reset

PLL

DLL

EncryptedMemory

Controller

AddrandCmdPath

WritePath

ReadPath

ALTMEMPHYtest_complete

global_reset_n

clock_source

mem_*

local_*

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B–7DDR and DDR2 SDRAM High-Performance Controller Example Simulation

5. Select <your project name>_run_msim_rtl_verilog.do and click OK.

6. ModelSim-AE includes all Altera device libraries; so a .do script for ModelSim-AE does not compile these libraries. NativeLink includes the relevant libraries for other simulators. Refer to “Simulation Flow For Other Simulators” on page B–25.

Understanding the Testbench/ALTMEMPHY Stages of OperationBefore the user logic (example driver) can read or write to the local interface, the external SDRAM must first be initialized and calibrated. Following power-up or a reset event, the following stages of operation take place:

■ PLL initialization and lock

■ Memory device initialization

■ Interface training and calibration

■ Write training data

■ Calibration

■ Functional memory use

PLL Initialization and Lock

This is the first activity that takes place and completes when the signal pll_locked is first asserted. Typically this stage requires approximately 150 ns, but can take longer if the PLL Option Hold ‘locked’ output low for <user entered number> cycles after the PLL initializes is turned on.

The exact length of time required for pll_locked to become asserted depends on several factors including Device Type, PLL Type, and PLL Configuration. For more information refer to ALTPLL Megafunction User Guide.

1 pll_locked is not included in the simulation default waveform view, and must be added manually.

Memory Device Initialization

Memory devices must be initialized before functional use. The exact sequence is different for DDR2 and DDR. The memory controller sets the operating parameters of the memory based on the parameters you specify in the MegaWizard interface. This parameter is fixed at generation time and is not dynamically editable via the local interface.

Interface Training and Calibration

The sequencer element of the ALTMEMPHY megafunction performs path-delay analysis to correctly set up the resynchronization (DQS mode devices), capture (Non DQS Mode devices) clocks and the data alignment settings. The sequencer issues read and write commands to the memory controller over the ctl_* interface for DDR and DDR2 SDRAM high-performance memory controllers. This is performed in the following two stages:

– Write training data

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B–8DDR and DDR2 SDRAM High-Performance Controller Example Simulation

A specific pattern of data is written to the memory so that each DQ pin may be calibrated. The same pattern is written to every DQ pin. The pattern takes the form: “10101010_11111111_00000000_11111100” from the lowest address location to the highest address location left to right. Once the memory interface has been initialized, a single write transaction is observed to the memory using the pattern above to write the same pattern to each DQ bit.

– Calibration

Once the write training data process has been completed, the sequencer then repeatedly reads the training pattern back from the memory. This is performed on a per DQ pin basis, and for all available phase steps supported by the PLL configuration.

The sequencer phase steps through 360° for a full rate controller and through 720° for a half rate controller. For simulation purposes only, calibration can be performed on just a single DQ pin, which greatly reduces simulation run time. The sequencer stores a list of pass/fail training pattern results and once all phase comparisons have been made, sets the optimum clock phase to be centered in the available window of results.

Simulation of the calibration cycle cannot be bypassed, but setting it to single bit calibration speeds up the process significantly.

1 The ALTMEMPHY megafunction version 8.0 stores only the center of data valid window and read latency. The amount of internal RAM required to store calibration results therefore, is significantly reduced compared to earlier versions. The total calibration time is also reduced.

Functional Memory Use

Once training and calibration has completed, the ALTMEMPHY sequencer asserts ctrl_usr_mode_rdy to the memory controller which is then copied to the local interface as the signal local_init_done. Local interface read and write transactions can now occur.

In the example testbench, the example driver now performs 16 writes followed by 16 reads to incremental address locations spanning column, row and bank locations using LFSR pattern based on the address being written.

Understanding the ModelSim Wave and Transcript WindowTo better understand the operation of the ALTMEMPHY megafunction and the memory controllers, it is important to identify the various stages of operation, the expected results, and the behavior of the IP. The following sections describe each of these stages in greater detail.

■ “Full Window Stage Identification” on page B–9

■ “Initialization Stage” on page B–11

■ “Write Training Data Stage” on page B–13

■ “Read Calibration Phase” on page B–15

■ “Functional Memory Use Stage” on page B–19

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B–9DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Full Window Stage Identification

Figure B–4 on page B–10 shows a standard appearance of an example testbench in the ModelSim software.

1 The total simulation time around 270 µs to 203 µs is used for the memory initialization requirements, and in this example 61 µs is used by the calibration routine to calibrate using just a single DQ pin. In general, the PLL initialization phase has negligible impact on the overall simulation time.

f For further information on simulating the PLL, refer to ALTPLL Megafunction User Guide.

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Figure B–4. Example Testbench

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B–11DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Initialization Stage

The full window stage shows that the Memory initialization stage is dominated by the NOP command where tINIT is 200 µs.

1 Version 8.1 automatically skips this stage in simulation.

The exact sequence of commands differs between the various external memory families (refer to the respective the device datasheets for further information). For this DDR2 SDRAM example, the following sequence applies:

1. Issue NOP commands for 200 µs, programmable via tINIT parameter.

2. Assert mem_cke (high).

3. Issue a PCH, then wait for 400 ns after tINIT (400 ns is derived from dividing tINIT counter by 500).

4. Issue an LMR command to ELMR register 2 = 0.

5. Issue an LMR command to ELMR register 3 = 0.

6. Issue an LMR command to ELMR register to enable the memory DLL and set Drive strength, AL, RTT, DQS#, RDQS, OE.

7. Issue an LMR command to MR register to reset DLL and set operating parameters.

8. Issue a PCH.

9. Issue an ARF.

10. Issue another ARF.

11. Issue an LMR command to MR register to set operating parameters.

12. Issue an LMR command to ELMR register to set default OCD and parameters. 200 clock cycles after DLL reset, the memory is initialized.

See Figure B–5 on page B–12 for the expected waveform view of the initialization phase directly following the NOP of 200 µs. Steps 2 to 9 are expanded to increase detail. Initialization is complete by the second yellow cursor. Additional signals are added to simplify debugging.

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Figure B–5. DDR2 SDRAM Simulation Initialization Phase

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B–13DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Write Training Data Stage

As shown in Figure B–6 on page B–14, following memory initialization, the write data training stage is closely followed by the first read data calibration read sample.

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Figure B–6. Writing Data Training

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B–15DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Read Calibration Phase

Figure B–7 on page B–16 shows that the read data calibration stage closely follows the write data stage. The calibration repeatedly performs the following steps:

1. Reads back the data pattern.

2. Records pass/fail.

3. Increments the PLL phase step. (360°/number of phase steps).

4. Repeats.

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Figure B–7. Read Calibration Phase

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B–17DDR and DDR2 SDRAM High-Performance Controller Example Simulation

This process continues until all 360° (full rate) or 720° (half rate) worth of phases are sampled and the available data window is measured. The length of time between each read is determined by the PLL reconfiguration requirements and the compare and store operation of the sequencer, which is device and configuration dependant. The gap observed between the first and subsequent reads is greater as the sequencer must set the PLL into phase stepping mode.

Once a successful range of phases has been sampled, the sequencer center aligns the PLL phase within this calibrated window. This can be observed on the PLL reconfiguration bus as a burst of phase changes without any read accesses. In the example, this calibration is setting on the capture clock phase, so you would (in a functional simulation) expect a phase of around –90° to be selected. 48 phase steps were reported during the generation, and a burst of 10 PLL reconfigurations can be observed (360/48 * 10 = –75°). Refer to Figure B–8 on page B–18.

1 In Cyclone III devices, calibration is performed on the capture clock and in Arria GX, Stratix II, and Stratix III devices, calibration is performed on the resynchronization clock.

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Figure B–8. Calibration Phase - Setting the Optimum Phase

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B–19DDR and DDR2 SDRAM High-Performance Controller Example Simulation

1 Until the completion of the calibration phase, the local interface remains static and all transactions take place over the control interface. Additional signals of interest are added to the wave view.

1 For simulation purposes, the ALTMEMPHY megafunction allows calibration of a single DQ pin. If you do not enable this option, then the time required for the calibration phase of the simulation is multiplied by the number of DQ pins used in your actual memory controller instance. To enable this option, select Quick Calibration under Auto-Calibration Simulation Options list at the Memory Settings tab in the Parameter Settings page.

Functional Memory Use Stage

Once the calibration stage completes, indicated by the signals local_init_done and ctl_usr_mode_rdy, then the functional memory use stage begins.

The example driver, which is generated by the MegaWizard Plug-In Manager, is clear text HDL in the language of your choice. It can be used to test a custom controller and ALTMEMPHY megafunction combination. It performs a series of writes to the external memory, followed by a series of reads to the same locations, and compares the read and write data.

This comparison results in dynamic “pass not fail per byte” (pnf_per_byte) signals, and a latched combined pass not fail (pnf, 1=pass 0=fail) signal. Each completed series of writes and reads is signaled via the test_complete signal, and then the test repeats.

1 The example testbench stops when either test_complete is asserted or when 200,000 mem_clk cycles after the tINIT time.

In Figure B–9 on page B–20, the series of writes followed by reads can be seen on both the local and memory interfaces, together with the test complete signals.

As the data written to the memory is simply an LFSR pattern, the example driver is able to generate expected read data from the memory to compare with that previously written to the same address. The data on the read data bus should match that on the write data bus during the read process.

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Figure B–9. Functional Memory Use Stage

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B–21DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Modifying the Testbench for Additional Debug SignalsThe NativeLink script that compiles the example testbench only adds the signals that are available in the top level of the testbench. The following types of signals are added:

■ External memory interface signals

■ Clock source

■ Reset

■ Test complete

■ Pass Not Fail

■ Pass Not Fail Per Byte

To understand the actual operation of the DDR and DDR2 SDRAM high-performance memory controllers, example driver, and internal interfaces, you must add more signals to the waveform view. The following steps describe how you can add signals to the waveform view in the ModelSim:

1. Select the instance associated with the required node in the Workspace/Instance window.

2. Select the required node in the Objects window.

3. Right-click and select Add to Wave - Selected Signals.

4. The ModelSim command used is copied to the Transcript window, and can be directly taken from here into a wave.do file specific to your project for easy future use.

Additional Debug Signals

PLL and PLL reconfiguration signals

Before any design operates correctly, all clock and reset signals must be stable and configured correctly. Therefore you must ensure that the various PLL ports are visible in your simulation. This is of increased values when simulating a DDR and DDR2 SDRAM high-performance memory controller based design due to the PLL phase calibration stages that occur. Refer to ALTPLL Megafunction User Guide for a full description of each signal.

You must add the following ALTMEMPHY signals to your simulation:

seq_pll_select phasecounterselectseq_pll_inc_dec_n phaseupdownseq_pll_start_reconfig configupdatepll_reconfig_busypll_phase_donepll_lockedphs_shft_busypll_reconfig_reset

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B–22DDR and DDR2 SDRAM High-Performance Controller Example Simulation

In Stratix II, Arria GX, and Stratix II GX designs in which a separate altpll_reconfig instance is required, the following signals may be added to the simulation. As Stratix III and Cyclone II device PLLs include a dynamic phase configuration option directly, these signals do not exist.

pll_reconfigpll_reconfig_counter_parampll_reconfig_counter_typepll_reconfig_data_inpll_reconfig_enablepll_reconfig_read_parampll_reconfig_soft_reset_en_npll_reconfig_write_parampll_reconfig_busypll_reconfig_clkpll_reconfig_data_outpll_reconfig_reset

1 Refer to the respective Device Handbooks or Phase_Locked Loops Reconfiguration (ALTPLL_RECONFIG) Megafunction User Guide for a full description of the signals listed and their required operation.

1 The output clock order is fixed in the ALTMEMPHY (seq_pll_select) and a mapping takes place to align with the required clock port used for each different device family. Refer to <variation name>_phy_alt_mem_phy.v(hd) file and refer to the section that starts with the following code:

// NB This lookup table shall be different for CIII/SIII// The PLL phasecounterselect is 3 bits wide, therefore hardcode the output to 3 bits:

Calibration status interface

The calibration signals provide key information for ALTMEMPHY megafunction, because functional operation is not possible unless the ALTMEMPHY megafunction completes calibration successfully. The following are the calibration signals:

resynchronization_successful (All devices)postamble_successful (Stratix Series devices only)tracking_adjustment_downtracking_adjustment_uptracking_successful

1 All of the tracking signals relate to the operation of the mimic and measure clock. These signals are of most interest in a hardware development platform, as they only periodically activate. The first measure occurs immediately after local_init_done goes active. These signals do not activate during a functional simulation, as voltage and temperature variation does not exist.

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B–23DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Additional calibration status interface signals

Add the signals in Table B–1 to your simulation to provide additional information about calibration status:

Control interface signals

If you are developing a controller using the ALTMEMPHY megafunction, or debugging an operational issue, then the control interface between the ALTMEMPHY megafunction and the memory controller is important. During calibration, the sequencer requires control over the memory controller via this interface. Any problems can result in a failure to calibrate. You must add the following signals to your simulation:

ctl_init_donectl_readycontrol_rdatacontrol_rdata_validcontrol_doing_rdcontrol_wdata_validcontrol_dqs_burstctl_usr_mode_rdyctl_address

Table B–1. Signals for Calibration Status

Signal Description

rsu_codvw_phase

(Center of data valid window)

The ALTMEMPHY Resynchronization Setup Unit (RSU) sweeps the phase of a resynchronization clock across 360° (full-rate mode) or 720° (half-rate mode) of a memory clock cycle. Data reads from the DIMM are performed for each phase position, and a data valid window is located, which is the set of resynchronization clock phase positions where data is successfully read. The final resynchronization clock phase is set at the center of this range: the center of the data valid window or CODVW. This output is set to the current calculated value for the CODVW, and represents how many phase steps were performed by the PLL to offset the resynchronization clock from the memory clock.

rsu_read_latency

(Read latency at the center of the window)

If the RSU can find one data valid window (and not more than one) then the resynchronization clock is positioned at the center and the rsu_read_latency output is then set to the read latency (in phy_clk cycles) using that resynchronization clock phase. If calibration is unsuccessful then this signal remains at 0.

rsu_no_dvw_err

(Calibration failed due to no window found)

If the RSU sweeps the resynchronization clock across every phase and does not see any valid data at any phase position, then calibration fails and this output is set to 1.

rsu_grt_one_dvw_err

(Calibration failed due to more than one valid window)

If the RSU sweeps the resynchronization clock across every phase and sees multiple data valid windows, this is indicative of unexpected read data (random bit errors) or an incorrectly configured PLL which must be resolved. Calibration has failed and this output is set to 1.

rsu_multiple_valid_latencies_err

(Calibration failed due to more than two read latencies)

If the RSU sweeps the resynchronization clock across every phase and sees valid data at more than two different latencies, then calibration fails and this output is set to 1.

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B–24DDR and DDR2 SDRAM High-Performance Controller Example Simulation

ctl_read_reqctl_write_reqcontrol_wdatacontrol_bectl_burstbegin_sig

1 For more information about these signals, refer to External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

Local or user interface signals

Correct operation of the local interface is not required until calibration is complete, which is indicated by local_init_done signal. The DDR and DDR2 high-performance controllers generate an example driver to exercise the external memory interface and demonstrate clearly the required operation of the local interface. You must add the following signals to your simulation.

mem_local_init_donemem_local_readymem_local_addrmem_local_col_addrmem_local_cs_addrmem_local_read_reqmem_local_rdatamem_local_rdata_validmem_local_write_reqmem_local_wdatamem_local_bemem_local_sizemem_local_wdata_req (Native i/f Only)mem_local_burstbegin (Avalon Only)

1 For more information about these signals, refer to “Signals” on page 3–37 or External DDR Memory PHY Interface Megafunction User Guide (ALTMEMPHY).

Virtual command decode

In addition to including actual nodes or buses in your simulation, you can add virtual enumerated types to most RTL simulation environments so that interface commands can be decoded and represented easily.

In ModelSim, these take form:

virtual type {LMR ARF PCH ACT WR RD BT NOP}CmdType

quietly virtual function -install/<variation name>_example_top_tb/dutenv/<variation name>_example_top_tb{(CmdType){/<variation name>_example_top_tb/dut/mem_ras_n,/<variation name>_example_top_tb/dut/mem_cas_n,/<variation name>_example_top_tb/dut/mem_we_n)}Command

add wave -noupdate -format Literal -radix hexadecimal/<variation name>_example_top_tb/dut/Command

1 For further information, type help virtual type in the ModelSim Transcript window. This virtual type code can be added directly to a DDR/DDR2 wave.do file.

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B–25DDR and DDR2 SDRAM High-Performance Controller Example Simulation

Adding Signals to the Example TestbenchWhile you can manually add the signals previously discussed to any simulation, it is easy to edit the example testbench to include any signals you want. To add signals to the example testbench, follow these steps:

1. Edit the <variation name>_run_msim_rtl_*.do file to replace the lines:

add wave *view structureview signals

with the line:

do wave.do

1 Remember that if you rerun the NativeLink simulation, any changes made to <variation name>_run_msim_rtl_*.do are overwritten.

2. To create a file called wave.do, follow these steps:

a. Select the instance associated with the required node in the Workspace/Instance window.

b. Right-click the required node in the Objects window and then select Add to Wave - Selected Signals.

c. Copy the ModelSim command from the Transcript window and paste it into the wave.do file.

d. Alternatively, once you add all required signals to the wave window, select it and save. This action creates a wave.do file.

1 An example wave.do file is included with the example design archive for your reference.

Simulation Flow For Other SimulatorsWhile this Appendix focuses on the ModelSim-AE simulation flow, the same concepts apply to other Altera-supported RTL simulation tool. However, some additional steps are usually required. Refer to Simulation and Verification Support Resources.

Additional Required Files and Compilation OrderThe Quartus II software automatically creates the required files list and auto-compilation script for any supported RTL simulation tool, if you specify the tool and language settings under the Assignment menu, on the EDA Tool Settings > Simulation page in the Settings dialog box.

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B–26Conclusion

The required files and order are as listed below. These files are located in the <Quartus II install path>/quartus/eda/sim_lib/ directory:

■ 220model

■ altera_primitives

■ altera_mf

■ sgate

■ stratixiv_atoms / stratixiii_atoms / cycloneiii_atoms / stratixii_atoms / stratixiigx_atoms (device dependent)

ConclusionThis appendix shows how to use the DDR and DDR2 SDRAM high-performance controller example testbench to better understand the interaction between the high-performance controller and the ALTMEMPHY megafunction. You can add additional interface descriptions to the default simulation environment to assist in debugging your design.

In addition to RTL simulation, you can use additional interfaces, example design, and the SignalTap II logic analyzer to assist in debugging a hardware development platform.

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© November 2008 Altera Corporation

C. Latency

When designing for memory controllers, you must consider read and write latencies. Altera defines read and write latencies as follows:

■ Read Latency—the amount of time it takes for the read data to appear at the user (local) interface after you initiate the read request.

■ Write Latency—the amount of time it takes for the write data to appear at the memory interface after you initiate the write request.

Altera assumes the following basic assumptions when calculating latency:

■ Reading and writing occurs to rows that are already open

■ The local_ready signal is asserted high (no wait states)

■ No refresh cycles occur before the transaction

■ Latency is defined using the user (local) side frequency and absolute time (ns)

1 For the half rate controller, the user (local) side frequency is half of the memory interface frequency. For the full rate controller, the user (local) side frequency is equal to the memory interface frequency.

Altera defines the read and write latencies in terms of the local interface clock frequency and by the absolute time for the memory controllers.

Latency for High-Performance ControllersThe latency for high-performance controllers comprises many different stages of the memory interface. Figure C–1 on page C–2 shows a typical memory interface read latency path showing the read latency from the time a local_read_req assertion is detected by the controller up to data available to be read from the DRAM module.

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C–2 Appendix C: LatencyLatency for High-Performance Controllers

Table C–1 shows the different stages that make up the whole read latency, shown in Figure C–1.

From Figure C–1, the read latency in the high-performance controllers is made up of four components:

Read latency = controller latency + command output latency + CAS latency + PHY read data input latency

= T1 + T2 + T3 + T4

Similarly, the write latency in the high-performance controllers is made up of three components:

Write latency = controller latency + write data latency = T1 + T2 + T3

You can separate the controller and PHY read data input latency into latency that occurred in the input/output element (IOE) and latency that occurred in the FPGA fabric.

Figure C–1. Typical Read Latency Path

ShiftedDQS Clk

High-Performance

Controller

PLLphy_clk

local_rdata

local_read_req

control_doing_rd

PLL0° or 180°

PHY

FPGA Device Memory Device

Latency T3(includes CAS

latency)

Latency T1

local_addrmem_cs_n

mem_dq [ ]

mem_dqs [ ]

Latency T2Address/Command Generation

Core I/O

Alignment andSynchronization

Capture

ShiftedDQS Clock

Resynchronization Clock

Half-rate

DPRAM

Read DatapathLatency T4

mem_clk [ ]

mem_clk_n [ ]

Table C–1. High Performance Controller Latency Stages and Descriptions

Latency Number Latency Stage Description

T1 Controller local_read_req or local_write_req signal assertion to ddr_cs_n signal assertion.

T2 Command Output ddr_cs_n signal assertion to mem_cs_n signal assertion.

T3 CAS or WL Read command to DQ data from the memory or write command to DQ data to the memory.

T4 ALTMEMPHY read data input Read data appearing on the local interface.

T2 + T3 Write data latency Write data appearing on the memory interface.

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Appendix C: Latency C–3Latency for High-Performance Controllers

Table C–2 and C–3 show a typical latency that can be achieved in Arria GX, Stratix III, Stratix II, Stratix II GX, and Cyclone III devices. The exact latency for your memory controller depends on your precise configuration. You should obtain precise latency from simulation, but this figure may vary slightly in hardware because of the automatic calibration process.

Table C–2. Typical Read Latency in Arria GX High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA IO FPGA I/O CyclesTime(ns)

DDR2/DDR SDRAM 233 Half rate 6 2 1 2 5.5 1 18 151

DDR2/DDR SDRAM 167 Full rate 5 1 1 4 8 1 20 120

Notes to Table C–2:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) CAS Latency is per memory device specification and is configurable in the MegaWizard interface.(5) Total read latency is the sum of controller, address and command, CAS, and read data latencies.

Table C–3. Typical Write Latency in Arria GX High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency Memory

WriteLatency

(4)

Total WriteLatency (5)

FPGA I/O CyclesTime(ns)

DDR2/DDR SDRAM 233 Half rate 6 2 1 1.5 11 91

DDR2/DDR SDRAM 167 Full rate 5 1 1 3 10 60

Notes to Table C–3:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) Memory write latency is per memory device specification. This is the latency from when you provide the command to write to when you need

to provide data at the memory device.(5) Total write latency is the sum of controller, address and command, and memory write latencies.

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C–4 Appendix C: LatencyLatency for High-Performance Controllers

Table C–4. Typical Read Latency in Stratix III High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA IO FPGA I/O CyclesTime(ns)

DDR2 SDRAM 400 Half rate 6 4 1 2.5 7.125 1.5 23 111

DDR2 SDRAM 267 Full rate 5 2 1.5 4 9 1 23 85

Notes to Table C–4:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) CAS Latency is per memory device specification and is configurable in the MegaWizard interface for DDR2/DDR SDRAM device. (5) Total read latency is the sum of controller, address and command, CAS, and read data latencies.

Table C–5. Typical Write Latency in Stratix III High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency Memory

WriteLatency

(4)

Total WriteLatency (5)

FPGA I/O CyclesTime(ns)

DDR2SDRAM 400 Half rate 6 4 1 2 13 65

DDR2SDRAM 267 Full rate 5 2 1.5 3 12 44

Notes to Table C–5:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) Memory write latency is per memory device specification. This is the latency from when you provide the command to write to when you need

to provide data at the memory device.(5) Total write latency is the sum of controller, address and command, and memory write latencies.

Table C–6. Typical Read Latency in Stratix II/ Stratix II GX High-Performance Controllers (Part 1 of 2) (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA IO FPGA I/O CyclesTime(ns)

DDR2 SDRAM 333 Half rate 6 2 1 2 5.5 1 18 105

DDR SDRAM 267 Half rate 6 2 1 2 5.5 1 18 132

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Appendix C: Latency C–5Latency for High-Performance Controllers

DDR2/DDR SDRAM 200 Full rate 5 1 1 4 8 1 20 100

Notes to Table C–6:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) CAS Latency is per memory device specification and is configurable in the MegaWizard interface.(5) Total read latency is the sum of controller, address and command, CAS, and read data latencies.

Table C–6. Typical Read Latency in Stratix II/ Stratix II GX High-Performance Controllers (Part 2 of 2) (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA IO FPGA I/O CyclesTime(ns)

Table C–7. Typical Write Latency in Stratix II/ Stratix II GX High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency Memory

WriteLatency

(4)

Total WriteLatency (5)

FPGA I/O CyclesTime(ns)

DDR2SDRAM 333 Half rate 6 2 1 1.5 11 63

DDRSDRAM 267 Half rate 6 2 1 1.5 11 79

DDR2/DDRSDRAM 200 Full rate 5 1 1 3 10 50

Notes to Table C–7:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) Memory write latency is per memory device specification. This is the latency from when you provide the command to write to when you need

to provide data at the memory device.(5) Total write latency is the sum of controller, address and command, and memory write latencies.

Table C–8. Typical Read Latency in Cyclone III High-Performance Controllers (Part 1 of 2) (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA I/O FPGA IO CyclesTime(ns)

DDR2/DDR SDRAM 200 Half rate 6 2 1 2 5.5 1 18 175

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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C–6 Appendix C: LatencyLatency for High-Performance Controllers

DDR2/DDR SDRAM 167 Full rate 5 1 1 4 8 1 20 120

Notes to Table C–8:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) CAS Latency is per memory device specification and is configurable in the MegaWizard interface.(5) Total read latency is the sum of controller, address and command, CAS, and read data latencies.

Table C–8. Typical Read Latency in Cyclone III High-Performance Controllers (Part 2 of 2) (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency

CAS Latency

(4)

Read DataLatency

Total ReadLatency (5)

FPGA I/O FPGA IO CyclesTime(ns)

Table C–9. Typical Write Latency in Cyclone III High-Performance Controllers (Note 1), (2)

Memory StandardFrequency

(MHz)Interface

Mode

Controller Latency

(3)

Address andCommand Latency Memory

WriteLatency

(4)

Total WriteLatency (5)

FPGA I/O CyclesTime(ns)

DDR2/DDRSDRAM 200 Half rate 6 2 1 1.5 11 105

DDR2/DDRSDRAM 167 Full rate 5 1 1 3 10 60

Notes to Table C–9:

(1) These are typical latency values using the assumptions listed in the beginning of the section. Your actual latency may be different than shown. You need to perform your own simulation for your actual latency.

(2) Numbers shown may have been rounded up to the nearest higher integer.(3) The controller latency value is from the Altera high-performance controller.(4) Memory write latency is per memory device specification. This is the latency from when you provide the command to write to when you need

to provide data at the memory device.(5) Total write latency is the sum of controller, address and command, and memory write latencies.

DDR and DDR2 SDRAM High-Performance Controller User Guide © November 2008 Altera Corporation

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Appendix C: Latency C–7Latency for High-Performance Controllers

Figure C–2 and Figure C–3 show a full-rate DDR2 SDRAM simulation example for Stratix II devices that derive the read and write latency numbers in Table C–3.

Figure C–2. Simulation Example Showing a Read Data Latency for a DDR2 SDRAM in a Stratix III Device

Figure C–3. Simulation Example Showing a Write Data Latency for a DDR2 SDRAM in a Stratix III Device

© November 2008 Altera Corporation DDR and DDR2 SDRAM High-Performance Controller User Guide

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C–8 Appendix C: LatencyLatency for High-Performance Controllers

DDR and DDR2 SDRAM High-Performance Controller User Guide © November 2008 Altera Corporation

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© November 2008 Altera Corporation

Additional Information

Revision HistoryThe following table shows the revision history for this user guide.

How to Contact AlteraFor the most up-to-date information about Altera products, see the following table.

Date Version Changes Made

November 2008 8.1 ■ Updated new read and write waveforms

■ Updated section on Example Driver

■ Added new section on DDR/DDR2 SDRAM High-Performance Controller Architecture

■ Added new section on Simulating With Other Simulators - VHDL/Verilog HDL IP Functional Simulation

May 2008 8.0 ■ Updated new read and write waveforms

■ Added new simulation appendix (Appendix B)

■ Added more detailed latency information (Appendix C)

■ Added Stratix IV support

October 2007 7.2 ■ Corrected half rate and full rate information

■ Corrected local_wdata_req, mem_clk, and mem_clk_n description

■ Updated typical latency numbers

May 2007 7.1 ■ Updated device support

■ Added description of ECC

■ Added Appendix A

December 2006 7.0 Added Cyclone III support.

December 2006 6.1 First release.

Contact (Note 1)Contact Method Address

Technical support Website www.altera.com/support

Technical training Website www.altera.com/training

Email [email protected]

Altera literature services Email [email protected]

Non-technical support (General) Email [email protected]

(Software Licensing) Email [email protected]

Note:

(1) You can also contact your local Altera sales office or sales representative.

DDR and DDR2 SDRAM High-Performance Controller User GuidePreliminary

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Info–2 Additional InformationTypographic Conventions

Typographic ConventionsThe following table shows the typographic conventions that this document uses.

Visual Cue Meaning

Bold Type with Initial Capital Letters

Indicates command names, dialog box titles, dialog box options, and other GUI labels. For example, Save As dialog box.

bold type Indicates directory names, project names, disk drive names, file names, file name extensions, and software utility names. For example, \qdesigns directory, d: drive, and chiptrip.gdf file.

Italic Type with Initial Capital Letters Indicates document titles. For example, AN 519: Stratix IV Design Guidelines.

Italic type Indicates variables. For example, n + 1.

Variable names are enclosed in angle brackets (< >). For example, <file name> and <project name>.pof file.

Initial Capital Letters Indicates keyboard keys and menu names. For example, Delete key and the Options menu.

“Subheading Title” Quotation marks indicate references to sections within a document and titles of Quartus II Help topics. For example, “Typographic Conventions.”

Courier type Indicates signal, port, register, bit, block, and primitive names. For example, data1, tdi, and input. Active-low signals are denoted by suffix n. For example, resetn.

Indicates command line commands and anything that must be typed exactly as it appears. For example, c:\qdesigns\tutorial\chiptrip.gdf.

Also indicates sections of an actual file, such as a Report File, references to parts of files (for example, the AHDL keyword SUBDESIGN), and logic function names (for example, TRI).

1., 2., 3., anda., b., c., and so on.

Numbered steps indicate a list of items when the sequence of the items is important, such as the steps listed in a procedure.

■ ■ Bullets indicate a list of items when the sequence of the items is not important.

1 The hand points to information that requires special attention.

c A caution calls attention to a condition or possible situation that can damage or destroy the product or your work.

w A warning calls attention to a condition or possible situation that can cause you injury.

r The angled arrow instructs you to press Enter.

f The feet direct you to more information about a particular topic.

DDR and DDR2 SDRAM High-Performance Controller User Guide © November 2008 Altera CorporationPreliminary