Datasheet - STGW80H65DFB, STGWT80H65DFB - …2 Electrical characteristics TC = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min

12

3

TO-3P

TAB

TO-247

12

3

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode

Applications• Photovoltaic inverters• High frequency converters

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGW80H65DFB

STGWT80H65DFB

Product summary

Order code STGW80H65DFB

Marking GW80H65DFB

Package TO-247

Packing Tube

Order code STGWT80H65DFB

Marking GWT80H65DFB

Package TO-3P

Packing Tube

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

STGW80H65DFB, STGWT80H65DFB

Datasheet

DS9536 - Rev 9 - June 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/STGW80H65DFB

https://www.st.com/en/product/STGWT80H65DFB

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

ICContinuous collector current at TC = 25 °C 120 (1)

AContinuous collector current at TC = 100 °C 80

ICP (2) Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A

VGEGate-emitter voltage ±20 V

Transient gate-emitter voltage ±30 V

IFContinuous forward current at TC = 25 °C 120 (1)

AContinuous forward current at TC = 100 °C 80

IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A

PTOT Total power dissipation at TC = 25 °C 470 W

TSTG Storage temperature range - 55 to 150°C

TJ Operating junction temperature range - 55 to 175

1. Current level is limited by bond wires2. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.32

°C/WRthJC Thermal resistance junction-case diode 0.66

RthJA Thermal resistance junction-ambient 50

STGW80H65DFB, STGWT80H65DFBElectrical ratings

DS9536 - Rev 9 page 2/18

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 80 A 1.6 2

VVGE = 15 V, IC = 80 A, TJ = 125 °C 1.8

VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9

VF Forward on-voltage

IF = 80 A 1.9 2.3

VIF = 80 A, TJ = 125 °C 1.6

IF = 80 A, TJ = 175 °C 1.5

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics


Cies Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

- 10524 -

pFCoes Output capacitance - 385 -

Cres Reverse transfer capacitance - 215 -

Qg Total gate chargeVCC = 520 V, IC = 80 A, VGE = 15 V

(see Figure 29. Gate charge test circuit)

- 414 -

nCQge Gate-emitter charge - 78 -

Qgc Gate-collector charge - 170 -

STGW80H65DFB, STGWT80H65DFBElectrical characteristics

DS9536 - Rev 9 page 3/18

Table 5. IGBT switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 400 V, IC = 80 A, VGE = 15 V,RG = 10 Ω

(see Figure 28. Test circuit for inductiveload switching)

84 -ns

tr Current rise time 52 -

(di/dt)on Turn-on current slope 1270 - A/µs

td(off) Turn-off-delay time 280 -ns

tf Current fall time 31 -

Eon (1) Turn-on switching energy 2.1 -

mJEoff (2) Turn-off switching energy 1.5 -

Ets Total switching energy 3.6 -

td(on) Turn-on delay time

VCE = 400 V, IC = 80 A, VGE = 15 V,RG = 10 Ω, TJ = 175 °C


77 -ns

tr Current rise time 51 -

(di/dt)on Turn-on current slope 1270 - A/µs

td(off) Turn-off-delay time 328 -ns

tf Current fall time 30 -

Eon (1) Turn-on switching energy 4.4 -

mJEoff (2) Turn-off switching energy 2.1 -

Ets Total switching energy 6.5 -

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)


trr Reverse recovery time

IF = 80 A, VR = 400 V, VGE = 15 V di/dt = 100 A/µs


- 85 - ns

Qrr Reverse recovery charge - 1105 - nC

Irrm Reverse recovery current - 26 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 722 - A/µs

Err Reverse recovery energy - 267 - µJ

trr Reverse recovery time

IF = 80 A, VR = 400 V, VGE = 15 V,TJ = 175 °C di/dt = 100 A/µs


- 149 - ns

Qrr Reverse recovery charge - 4920 - nC

Irrm Reverse recovery current - 66 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 546 - A/µs

Err Reverse recovery energy - 1172 - µJ

STGW80H65DFB, STGWT80H65DFBElectrical characteristics

DS9536 - Rev 9 page 4/18

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

100

00 TC(°C)

PTOT(W)

100

200

50

300

150

400

GIPD160920130948FSR

VGE = 15 V, TJ = 175 °C

Figure 2. Collector current vs case temperature

I C

60

40

20

00 25 T C (°C)

(A)

100

80

50 75

100

120

125 150

VGE =15 V,TJ =175 °C

GIPD160920130941FSR

Figure 3. Output characteristics (TJ = 25 °C)

IGBT060715EWFRWOC25

0 1 2 3 4 V CE (V)

160

140

120

100

80

60

40

20

0

I C (A) V GE = 15 V 13 V

11 V

9 V

7 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT060715EWFRWOC175

160

140

120

100

80

60

40

20

00 1 2 3 4

I C (A)

V CE (V)

V GE = 15 V 13 V11 V

9 V

7 V

Figure 5. VCE(sat) vs junction temperature

IGBT060715EWFRWVCET

2.6

2.2

1.8

1.4

1.0-50 0 50 100 150

V CE(sat) (V)

T J (°C)

V GE = 15 V

I C = 160 A

I C = 80 A

I C = 40 A

Figure 6. VCE(sat) vs collector current

IGBT060715EWFRWVCEC

2.4

2.0

1.6

1.2

0.8

0.4

0.00 40 80 120 160

V CE(sat) (V)

I C (A)

V GE = 15 V

T J = -40 °C

T J = 25 °CT J = 175 °C

STGW80H65DFB, STGWT80H65DFBElectrical characteristics (curves)

DS9536 - Rev 9 page 5/18

Figure 7. Collector current vs switching frequency

40

60

80

100

120

1 10

Ic [A]

f [kHz]

G Ωrectangular current shape,(duty cycle=0.5, VCC = 400V, R =10 ,VGE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

140

160

GIPD260520141426FSR

Figure 8. Forward bias safe operating area

IGBT171120161002FSOA

10 2

10 1

10 0

10 0 10 1 10 2

IC (A)

VCE (V)

single pulse, TC = 25°CTJ < 175 °C, VGE = 15 V

tp = 1µs

tp = 10µs

tp = 100µs

Figure 9. Transfer characteristics

IGBT060715EWFRWTCH

200

160

120

80

40

05 6 7 8 9

I C (A)

V GE (V)

V CE = 4 V

T J = 25 °C

T J = 175 °C

Figure 10. Diode VF vs forward current

VF

2.0

1.6

1.2

0.820 IF(A)

(V)

40 60

TJ= 175°C

25°C

-40°C

80 100 120 140

2.4

GIPD160920131135FSR

Figure 11. Normalized VGE(th) vs junction temperature

0.8

0.7

0.6-50 TJ(°C)

(norm)

0 50 100 150

0.9

1.0

1.1

GIPD160920131151FSR

IC = 1mA

VGE(th)

Figure 12. Normalized V(BR)CES vs junction temperature

0.9-50 TJ(°C)

VBR(CES)(norm)

0 50 100 150

1.0

1.1

GIPD160920131144FSR

IC = 2 mA


DS9536 - Rev 9 page 6/18

Figure 13. Capacitance variations

10000

1000

100

101 VCE(V)

C(pF)

10 100

CIES

GIPD160920131200FSR

0.1

COES

CRES

Figure 14. Gate charge vs gate-emitter voltage

00 Qg(nC)

VGE(V)

100 200 300 400

4

16

GIPD160920131156FSR

IC = 80 A

8

12

VCC = 520 V

Figure 15. Switching energy vs collector current

E

2000

100000 IC(A)

(µJ)

20 40 60 80

3000

4000

5000

VCC= 400V, VGE = 15VRG= 10Ω, TJ= 175°C

100 120 140

60007000

80009000

EON

EOFF

GIPD160920131436FSR

Figure 16. Switching energy vs gate resistance

E

2600

1800

10002 RG(Ω)

(µJ)

6 10 14 18

3400

4200

5000

VCC= 400V, VGE = 15VIC= 80A, TJ= 175°C

EON

EOFF

GIPD160920131208FSR

Figure 17. Switching energy vs temperature

E

1500

100025 TJ(°C)

(µJ)

50 75 100 125

2000

2500

3000

VCC= 400V, VGE = 15VIC= 80A, Rg= 10Ω

150

EOFF

EON

1750

3500

4000

4500

GIPD160920131504FSR

Figure 18. Switching energy vs collector emitter voltage

E

3000

2000

1000150 VCE(V)

(µJ)

200 250 300 350

4000

5000

6000 TJ= 175°C, VGE = 15VIC= 80A, Rg= 10Ω

400

EOFF

EON

450

GIPD160920131524FSR


DS9536 - Rev 9 page 7/18

Figure 19. Switching times vs collector current

t

100

10

1IC(A)

(ns)

20 40 60 80

TJ= 175°C, VGE = 15VVCC= 400V, Rg= 10Ω

100

tf

tdon

120

tr

tdoff

140

GIPD160920131533FSR

Figure 20. Switching times vs gate resistance

t

100

10Rg(Ω)

(ns)

4 8

TJ= 175°C, VGE = 15VVCC= 400V, IC= 80A

12

tr

tdon

tf

tdoff

16 20

GIPD160920131539FSR

Figure 21. Reverse recovery current vs diode currentslope

= 80 A

Irm

80

40

00 di/dt(A/µs)

(A)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

120

GIPD160920131550FSR

Figure 22. Reverse recovery time vs diode current slope

trr

100

50

00 di/dt(A/µs)

(ns)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

150

200

250

300

350

GIPD160920131557FSR

Figure 23. Reverse recovery charge vs diode currentslope

Qrr

2000

1000

00 di/dt(A/µs)

(nC)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

3000

4000

5000

6000

7000

GIPD160920131602FSR

Figure 24. Reverse recovery energy vs diode currentslope

r

Err

400

200

00 di/dt(A/µs)

(µJ)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

600

800

1000

1200

GIPD160920131610FSR


DS9536 - Rev 9 page 8/18

Figure 25. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 26. Thermal impedance for diode


DS9536 - Rev 9 page 9/18

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

25

STGW80H65DFB, STGWT80H65DFBTest circuits

DS9536 - Rev 9 page 10/18

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGW80H65DFB, STGWT80H65DFBPackage information

DS9536 - Rev 9 page 11/18

https://www.st.com/ecopack

http://www.st.com

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

STGW80H65DFB, STGWT80H65DFBTO-247 package information

DS9536 - Rev 9 page 12/18

Table 7. TO-247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

ØP 3.55 3.65

ØR 4.50 5.50

S 5.30 5.50 5.70

STGW80H65DFB, STGWT80H65DFBTO-247 package information

DS9536 - Rev 9 page 13/18

4.2 TO-3P package information

Figure 32. TO-3P package outline

8045950_3

STGW80H65DFB, STGWT80H65DFBTO-3P package information

DS9536 - Rev 9 page 14/18

Table 8. TO-3P package mechanical data

Dim.mm

Min. Typ. Max.

A 4.60 4.80 5.00

A1 1.45 1.50 1.65

A2 1.20 1.40 1.60

b 0.80 1.00 1.20

b1 1.80 2.00 2.20

b2 2.80 3.00 3.20

c 0.55 0.60 0.75

D 19.70 19.90 20.10

D1 13.70 13.90 14.10

E 15.40 15.60 15.80

E1 13.40 13.60 13.80

E2 9.40 9.60 9.90

e 5.15 5.45 5.75

L 19.80 20.00 20.20

L1 3.30 3.50 3.70

L2 18.20 18.40 18.60

ØP 3.30 3.40 3.50

ØP1 3.10 3.20 3.30

Q 4.80 5.00 5.20

Q1 3.60 3.80 4.00

STGW80H65DFB, STGWT80H65DFBTO-3P package information

DS9536 - Rev 9 page 15/18

Revision history

Table 9. Document revision history

Date Revision Changes

12-Mar-2013 1 First release.

18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1:Electrical characteristics (curves)

20-Nov-2013 3Added device in Max247. Modified Table 1 accordingly.

Updated Section 4: Package information. Minor text changes in cover page.

24-Jan-2014 4

Updated title and description in cover page.

Updated Table 6: IGBT switching characteristics (inductive load), Table 7: Diodeswitching characteristics (inductive load), Figure 9: Forward bias safe operating areaandFigure 14: Switching energy vs. temperature.

13-Jun-2014 5

Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipationvs. case temperature, Figure 18: Switching times vs. collector current, Figure 19:Switching times vs. gate resistance and Figure 24: Capacitance variations.

Added Figure 25: Collector current vs. switching frequency. Updated Section 4:Package information.

Minor text changes.

07-May-2015 6 Added TO-247 long leads package information.

21-Sep-2016 7

Updated Figure 2: "Output characteristics (TJ= 25 °C) ", Figure 3: "Outputcharacteristics (TJ= 175 °C) ", Figure 4: "Transfer characteristics ", Figure 7:"VCE(sat) vs. junction temperature" and Figure 8: "VCE (sat) vs. collector current".

The part number STGY80H65DFB has been moved to a separate datasheet.

Minor text changes.

17-Nov-2016 8

Updated Table 2: "Absolute maximum ratings" and Figure 9: "Forward bias safeoperating area".

The part number STGWA80H65DFB has been moved to a separate datasheet.Updated document accordingly.

14-Jun-2019 9

Modified Table 1. Absolute maximum ratings.

Updated Section 4.1 TO-247 package information.

Minor text changes.


DS9536 - Rev 9 page 16/18

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

STGW80H65DFB, STGWT80H65DFBContents

DS9536 - Rev 9 page 17/18

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved


DS9536 - Rev 9 page 18/18

http://www.st.com/trademarks

Documents

Datasheet - STGW80H65DFB, STGWT80H65DFB - …2 Electrical characteristics TC = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min