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DATA SHEET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 DISCRETE SEMICONDUCTORS BC160; BC161 PNP medium power transistors M3D110

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DATA SHEET

Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04

1997 May 12

DISCRETE SEMICONDUCTORS

BC160; BC161PNP medium power transistors

M3D110

1997 May 12 2

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

FEATURES

• High current (max. 1 A)

• Low voltage (max. 60 V).

APPLICATIONS

• General purpose applications.

DESCRIPTION

PNP medium power transistor in a TO-39 metal package.NPN complements: BC140 and BC141.

PINNING

PIN DESCRIPTION

1 emitter

2 base

3 collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage3

1

2

MAM334

12

3

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter

BC160 − − −40 V

BC161 − − −60 V

VCES collector-emitter voltage open base

BC160 − − −40 V

BC161 − − −60 V

ICM peak collector current − − −1.5 A

Ptot total power dissipation Tcase ≤ 45 °C − − 3.7 W

hFE DC current gain IC = −100 mA; VCE = −1 V

BC160-10; BC161-10 63 100 160

BC160-16; BC161-16 100 160 250

fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 50 − − MHz

1997 May 12 3

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC160 − −40 V

BC161 − −60 V

VCEO collector-emitter voltage open base

BC160 − −40 V

BC161 − −60 V

VEBO emitter-base voltage open collector − −5 V

IC collector current (DC) − −1 A

ICM peak collector current − −1.5 A

IBM peak base current − −200 mA

Ptot total power dissipation Tcase ≤ 45 °C − 3.7 W

Tstg storage temperature −65 +150 °CTj junction temperature − 175 °CTamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 200 K/W

Rth j-c thermal resistance from junction to case 35 K/W

1997 May 12 4

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

CHARACTERISTICSTamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −40 V − −10 −100 nA

IE = 0; VCB = −40 V; Tj = 150 °C − −10 −100 µA

IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA

hFE DC current gain IC = −100 µA; VCE = −1 V

BC160-10; BC161-10 − 80 −BC160-16; BC161-16 − 120 −

hFE DC current gain IC = −100 mA; VCE = −1 V

BC160-10; BC161-10 63 100 160

BC160-16; BC161-16 100 160 250

hFE DC current gain IC = −1 A; VCE = −1 V

BC160-10; BC161-10 − 20 −BC160-16; BC161-16 − 30 −

VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA − −0.6 −1 V

VBE base-emitter voltage IC = −1 A; VCE = −1 V − −1 −1.7 V

Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 30 pF

Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − − 180 pF

fT transition frequency IC = −50 mA; VCE = −10 V;f = 100 MHz

50 − − MHz

Switching times (between 10% and 90% levels)

ton turn-on time ICon = −100 mA; IBon = −5 mA;IBoff = 5 mA

− − 500 ns

toff turn-off time − − 650 ns

1997 May 12 5

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

PACKAGE OUTLINE

UNIT a b D D1 j k L w

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 6.606.35

0.480.41

9.399.08

8.338.18

0.850.75

0.950.75

14.212.7

α

0.2 45°

DIMENSIONS (mm are the original dimensions)

SOT5/11 TO-39 97-04-11

k

j

D A L

seating plane

b

D1

0 5 10 mm

scale

A

5.08

Metal-can cylindrical single-ended package; 3 leads SOT5/11

A

w AM M B M

α

B

a

1

2

3

1997 May 12 6

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 May 12 7

Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA54

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 12 Document order number: 9397 750 02281