Datasheet - A2C25S12M3 - ACEPACK 2 converter inverter

ACEPACK 2

Features• ACEPACK 2 power module

– DBC Cu Al2O3 Cu• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter– 1200 V, 25 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC• UL recognition: UL 1557, file E81734• Isolation rating of 2500 Vrms/min• RoHS compliant

Applications• Inverters• Motor drives

DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK 2package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status

A2C25S12M3

Product summary

Order code A2C25S12M3

Marking A2C25S12M3

Package ACEPACK 2

Leads type Solder contact pins

ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC

A2C25S12M3

Datasheet

DS12320 - Rev 4 - April 2019For further information contact your local STMicroelectronics sales office.

www.st.com

http://www.st.com/en/product/a2c25s12m3

1 Electrical ratings

1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol Description Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

IC Continuous collector current (TC = 100 °C) 25 A

ICP(1) Pulsed collector current (tp = 1 ms) 50 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 197 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC= 25 A 1.95 2.45 V

VGE = 15 V, IC = 25 A, TJ = 150 ˚C 2.3 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

1550 pF

Coes Output capacitance 130 pF

Cres Reverse transfer capacitance 65 pF

Qg Total gate chargeVCC = 960 V, IC = 25 A,

VGE = ±15 V80 nC

td(on) Turn-on delay time VCC = 600 V, IC = 25 A,

RG = 15 Ω, VGE = ±15 V,

di/dt = 1290 A/µs

109 ns

tr Current rise time 15.3 ns

Eon(1) Turn-on switching energy 0.97 mJ

A2C25S12M3 Electrical ratings

DS12320 - Rev 4 page 2/18


td(off) Turn-off delay time VCC = 600 V, IC = 25 A,

RG = 15 Ω, VGE = ±15 V,

dv/dt = 9600 V/µs

109 ns

tf Current fall time 132 ns

Eoff(2) Turn-off switching energy 1.36 mJ


RG = 15 Ω, VGE = ±15 V,

di/dt = 1274 A/µs, TJ = 150 °C

109 ns




RG = 15 Ω, VGE = ±15 V,

dv/dt = 8200 V/µs, TJ = 150 °C

122 ns



tSC Short-circuit withstand timeVCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.69 0.76 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current (TC = 100 °C) 25 A

IFP(1) Pulsed forward current (tp = 1 ms) 50 A




Table 4. Electrical characteristics of the diode, inverter stage


VF

(terminal)Forward voltage

IF = 25 A - 2.95 4.1V

IF = 25 A, TJ = 150 ˚C - 2.3

trr Reverse recovery time

IF = 25 A, VR = 600 V,

VGE = ±15 V, diF/dt = 1290 A/μs

- 190 ns

Qrr Reverse recovery charge - 1.53 µC

Irrm Reverse recovery current - 29 A

Erec Reverse recovery energy - 0.74 mJ

A2C25S12M3Inverter stage

DS12320 - Rev 4 page 3/18


trr Reverse recovery timeIF = 25 A, VR = 600 V,

VGE = ±15 V, diF/dt = 1274 A/μs,TJ = 150 °C

- 378 ns




RTHj-cThermal resistance junction-to-case Each diode - 1.05 1.16 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.85 °C/W

1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage


VCES Collector-emitter voltage (VGE = 0 V) 1200 V

IC Continuous collector current (TC = 100 °C) 25 A

ICP(1) Pulsed collector current (tp = 1 ms) 50 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 197 W




Table 6. Electrical characteristics of the IGBT, brake stage


V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC = 25 A 1.95V

VGE = 15 V, IC = 25 A, TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

1550 pF

Coes Output capacitance 130 pF

Cres Reverse transfer capacitance 65 pF

Qg Total gate chargeVCC = 960 V, IC = 25 A,

VGE = ±15 V80 nC

A2C25S12M3Brake stage

DS12320 - Rev 4 page 4/18



RG = 15 Ω, VGE = ±15 V,

di/dt = 1290 A/µs

109 ns




RG = 15 Ω, VGE = ±15 V,

dv/dt = 9600 V/µs

109 ns


Eoff (2) Turn-off switching energy 1.36 mJ


RG = 15 Ω, VGE = ±15 V,

di/dt = 1274 A/µs, TJ = 150 °C

109 ns




RG = 15 Ω, VGE = ±15 V,

dv/dt = 8200 V/µs, TJ = 150 °C

122 ns



tSC Short-circuit withstand timeVCC ≤ 600 V, VGE≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.69 0.76 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage



IF Continuous forward current (TC = 100 °C) 25 A

IFP(1) Pulsed forward current (tp = 1 ms) 50 A




Table 8. Electrical characteristics of the diode, brake stage


VF


IF = 25 A - 2.95V

IF = 25 A, TJ = 150 ˚C - 2.3

A2C25S12M3Brake stage

DS12320 - Rev 4 page 5/18


trr Reverse recovery time

IF = 25 A, VR = 600 V,

VGE = ±15 V, di/dt = 1290 A/μs

- 190 ns




trr Reverse recovery timeIF = 25 A, VR = 600 V,

VGE = ±15 V, di/dt = 1274 A/μs,

TJ = 150 °C

- 378 ns






1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.

Table 9. Absolute maximum ratings of the bridge rectifiers

Symbol Description Value Unit


IF RMS forward current 50 A

IFSMForward surge current tp = 10 ms, TC = 25 °C 450

AForward surge current tp = 10 ms, TC = 150 °C 365

I²ttp = 10 ms, TC = 25 °C 1012

A²stp = 10 ms, TC = 150 °C 666



Table 10. Electrical characteristics of the bridge rectifiers


VF


IF = 25 A - 1.05 1.4V

IF = 25 A, TJ = 150 ˚C - 0.92

IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA



A2C25S12M3Converter stage

DS12320 - Rev 4 page 6/18

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test condition Min. Typ. Max. Unit

R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

A2C25S12M3NTC

DS12320 - Rev 4 page 7/18

1.5 Package

Table 12. ACEPACK™ 2 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 33.5 nH

Rs Module single lead resistance, terminal to chip 3.6 mΩ

A2C25S12M3Package

DS12320 - Rev 4 page 8/18

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT010920171111OC15

40

30

20

10

00 1 2 3 4 5

Ic (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT010920171114OC175

40

30

20

10

00 1 2 3 4 5

IC (A)

VCE (V)

19 V 13 V

17 V15 V

11 V

9 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT010920171115TCH

40

30

20

10

05 6 7 8 9 10 11

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT301020181037CCT

50

40

30

20

10

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

A2C25S12M3Electrical characteristics (curves)

DS12320 - Rev 4 page 9/18

Figure 7. Switching energy vs gate resistance

IGBT031020170925SLG

4

3

2

1

010 30 50 70 90

E (mJ)

RG (Ω)

VCC = 600 V, IC = 25 A, VGE = ±15 V

Eon (TJ = 150 °C)

Eon (TJ = 25°C)

Eoff (TJ = 25 °C)

Eoff (TJ = 150 °C)

Figure 8. Switching energy vs collector current

IGBT031020170928SLC

3

2

1

05 15 25 35 45

E (mJ)

IC (A)

VCC = 600 V, VGE = ±15 V, RG = 15 Ω

Eon (TJ = 25°C)

Eoff (TJ = 150 °C)

Eon (TJ = 150 °C)

Eoff (TJ = 25 °C)

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT031020170930FSOA

50

40

30

20

10

00 300 600 900

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 15 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT010920171142DVF

40

30

20

10

00 1 2 3 4

IF (A)

VF (V)

TJ = 25 °C

TJ = 150 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT031020170932RRE

2.0

1.6

1.2

0.8

0.4

0.0200 500 800 1100

Erec (mJ)

di/dt (A/μs)

Tj = 150 °C

Tj = 25 °C

VCE = 600 V, IF = 25 A,VGE = ±15 V

Figure 12. Diode reverse recovery energy vs forwardcurrent

IGBT031020170935DVF

2.8

2.4

2.0

1.6

1.2

0.8

0.4

05 15 25 35 45 IF (A)

Erec (mJ) VCE = 600 V, RG = 15 Ω,

VGE = ±15 V

Tj = 150 °C

Tj = 25 °C


DS12320 - Rev 4 page 10/18

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT031020170938STR

2.0

1.6

1.2

0.8

0.4

0.010 30 50 70 90

Erec (mJ)

RG (Ω)

Tj =150 °C

Tj = 25 °C

VCC = 600 V, IF = 25 A, VGE = ±15 V

Figure 14. Converter diode forward characteristics(terminal)

IGBT031020170941DVFC

40

30

20

10

00 0.35 0.70 1.05

IF (A)

VF (V)

Tj = 150 °C

Tj = 25 °C

Figure 15. IGBT thermal impedance

GIPG031020171028ZTH

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(max)JC

JH

i 1 2 3 4ri (˚C/W) 0.0979 0.3583 0.6587 0.3617τi(s) 0.0004 0.0109 0.0731 0.3327

Zth(typ)JH

JC

i 1 2 3 4ri (˚C/W) 0.0865 0.3398 0.2287 0.1025τi(s) 0.0003 0.0068 0.0371 0.2801

RC - Foster Thermal Network


Figure 16. Inverter diode thermal impedance

IGBT031020171035ZTHD

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ)JH

Zth(max)JC

JC

i 1 2 3 4ri (˚C/W) 0.1488 0.4932 0.3655 0.1483τi(s) 0.0007 0.0052 0.0263 0.2160

JH

i 1 2 3 4ri (˚C/W) 0.2136 0.5294 0.7328 0.4189τi(s) 0.0010 0.0096 0.0612 0.2839




DS12320 - Rev 4 page 11/18

3 Test circuits

Figure 17. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 18. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 19. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 20. Diode reverse recovery waveform

25

A2C25S12M3Test circuits

DS12320 - Rev 4 page 12/18

4 Topology and pin description

Figure 21. Electrical topology and pin description

L3

L1L2

P

N

P1

GB

B

NB

T1U

T2

VW

EU EV EW

G1

G2

G3

G4

G5

G6

Figure 22. Package top view with CIB pinout

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1 PP

N

G1VVG3

G5

T2

T1

EW G4EV EV G2EU EU NB

P1

W W U U

N

GADG041020170942SA

A2C25S12M3Topology and pin description

DS12320 - Rev 4 page 13/18

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

A2C25S12M3Package information

DS12320 - Rev 4 page 14/18

https://www.st.com/ecopack

http://www.st.com

5.1 ACEPACK 2 CIB solder pins package information

Figure 23. ACEPACK 2 CIB solder pins package outline (dimensions are in mm)

56.7±0.3

51±0.15

22.7±0.3

16.4±0.2

4.5±0.1

12±0

.35

15.5

±0.5

3.2 BSC

1.3±0.2

2.5±0.2

62.8

±0.5

48±0

.3

53±0

.1

42.5

±0.2

52.7 REF

37 R

EF

A ADetail A

3.5 REF x45°

2.3

REF

8.5

0.009.60

12.8016.0019.2022.4025.6028.8032.00

0.00

3.20

6.40

9.60

12.8

0

16.0

019

.20

22.4

0

25.6

0

28.8

0

32.0

0

35.2

0

38.4

0

41.6

0

44.8

0

48.0

0

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1

G13G V V

G5

T2

T1

EW G4E V EV G2E U EU NB

P1

3.2

BSC

0.64±0.03

8569722_ACEPACK2_CIB_solderable_pins

W W U U

P P

N N

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A2C25S12M3ACEPACK 2 CIB solder pins package information

DS12320 - Rev 4 page 15/18

Revision history

Table 13. Document revision history

Date Revision Changes

02-Oct-2017 1 Initial release.

07-Mar-2018 2

Removed maturity status indication from cover page. The document status isproduction data.

Modified features on cover page.

Updated Figure 7. Switching energy vs collector current, Figure 14. IGBTthermal impedance and Figure 15. Inverter diode thermal impedance.

Updated Figure 22. ACEPACK™ 2 CIB solder pins package outline(dimensions are in mm).

Minor text changes.

20-Nov-2018 3Added Figure 6. IGBT collector current vs case temperature.

Minor text changes.

12-Apr-2019 4 Updated features in cover page

A2C25S12M3

DS12320 - Rev 4 page 16/18

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

5.1 ACEPACK 2 CIB solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

A2C25S12M3Contents

DS12320 - Rev 4 page 17/18

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

A2C25S12M3

DS12320 - Rev 4 page 18/18

http://www.st.com/trademarks

Documents

Datasheet - A2C25S12M3 - ACEPACK 2 converter inverter