Cu-doped Zno (in progress)

8/21/2019 Cu-doped Zno (in progress)

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A Rigorous Simulation Based Study of Gate

Misalignment Effects in Gate Engineered

Double-Gate (DG) MOSFEs

A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF

THE REQUIREMENTS FOR THE DEGREE OF

Master of TechnologyIn

VLSI Design and EmbeddedSystems

By:

SANTUNU SARANGI

Roll No. 211EC2111

Department of Electronics and Communication EngineeringNational Institute of Technology

Rourela! "rissa! India#$%&


2/58

I


3/58

A Rigorous Simulation Based Study of Gate

Misalignment Effects in Gate Engineered

Double-Gate (DG) MOSFEs

A THESIS SUBMITTED IN PARTIAL FULFILLMENT OF

THE REQUIREMENTS FOR THE DEGREE OF

Master of TechnologyIn

VLSI Design and EmbeddedSystems

By:

SANTUNU SARANGI

Roll No. 211EC2111

!nder t"e guidance of

Prof. (Dr.) P.K. TIWARI

Department of Electronics and Communication EngineeringNational Institute of Technology

Rourela! "rissa! India#$%&

II


4/58

This is to certify that the Thesis Report entitled 'A Rigorous Simulation Based S To the best of my no+ledge! the matter embodied in the thesis has not been submi

3

DEPARTMENT OF ELECTRONICS AND

COMMUNICATION ENGINEERING

NATIONAL INSTITUTE OF TECHNOLOGY, ROURKELA

ORISSA, INDIA-769008

#ER$F$#AE

%lace& Rour'ela

Date& rd

une* +,%rof. (Dr.) %. /. $0AR$


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4

Dep!

"# E!C!E

N$%"&$'

I&(%)e "#

Te*+&"'"

R")./e'$ 769008


6/58

ACKNOWLEDGEMENT

F%.( "# $'', I 1")'2 '%/e " ep.e(( 2eep (e&(e "# .e(pe* $&2 .$%)2e "1$.2(

$25%(". $&2 )%2e Dr. %. /. i1ari, #". +%( 5%(%"&$. )%2$&*e, %&(%+#)' *")&(e', $&2*"&($& e&*").$ee& +.")+") M! Te*+ p."e* 1"./! I $ .e$' %&2ee2 " +%

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*$.ee. $&2 ")'""/ #". +e #)).e! I *"&(%2e. % ""2 #".)&e " +$5e " $& "pp".)&% "

1"./ 1%+ ()*+ $ 1"&2e.#)' pe.("&!

I $ .)' +$&/#)' " D.! K! K! M$+$p$.$, D.! D! P! A*+$.$, D.! A$(+/$& S1$%& $&2 D.!

N! M! I('$ #". +e%. )%)%")( $((%($&*e $&2 %.e'e(( *$.e +.")+") +e M! e*+ p.".$!

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S$&)&) S$.$&%


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This thesis is dedicated to

the li.ing memories of my fatherLate 1rundaban Sarangi


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TABLE OF CONTENTS

ACKNOLEDGEMENT !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! I

INDE@ OF FIGUREG!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!>

INDE@ OF TA:LES! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! >III

ACRONYMS !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! I@

A:STRACT!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! @I

% INTRODUCTION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%

%/% M"S2ET and its scaling3 4 5istorical 6erspecti.e!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%

%/# ".er.ie+ of M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#

%/& M"S2ET operation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7

%/&/% Metal "8ide Semiconductor structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7

%/&/# M"S2ET structure and channel formation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7

%/7 M"S2ET scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!9

%/: Reasons for M"S2ET scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!;

%/9 Scaling problems!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!;

%/9/% 5igher subthreshold conduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!<

%/9/# Increased gate-o8ide leaage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%$

%/9/& Increased =unction leaage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%$%/9/7 Lo+er output resistance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%

%/9/: Lo+er transconductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%

%/9/9 Interconnect capacitance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%

%/9/; 5eat production!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%%

%/9/> 6rocess .ariations!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#

%/9/< Modeling challenges!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#

%/; Technology 1oosters3 Solution to Scaling!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#

%/;/% Channel Engineering Techni*ues!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%#

%/;/# ?ate Engineering Techni*ues!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%7

%/> Thesis "b=ecti.es!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%9

%/< Moti.ation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! %9

%/%$ Thesis "utline!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! %;

# LITERATURE REVIEW!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%>

#/% Double gate M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!%>

#/# ?ate engineered D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#$


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>II

#/& 4d.antages of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%

#/7 Challenges of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%

#/: ?ate misalignment of D? M"S2ETs!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#%

#/9 E@ect of misalignment3 past +ors!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!##

& SIMULATION METHODOLOGY!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9

&/% Introduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! #9

&/# Structure De)nition!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9

&/#/% Asing The Command Language To De)ne 4 Structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#9

&/& De)ning material parameters and models!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#<

&/&/% Specifying Contact Characteristics!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#<

&/&/# Specifying Material 6roperties!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

Semiconductor! Insulator! or Conductor!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7 DEVICE STRUCTURE & SIMULATION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&:

7/% The De.ice Structure!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&:

7/# Model used for simulation!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&9

: RESULTS & DISCUSSIONS!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&>

:/% Introduction!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &>

:/# Surface potential !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&>

:/& Threshold .oltage!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!77

:/7 Drain induced barrier lo+ering BDI1L!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:

:/: Sub threshold slope!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7;

:/9 Sub threshold current!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7>

:/; Ma8imum drain current!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:%

:/> Tranconductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:#

:/< "utput Conductance!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:&

9 CONCLUSION!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :;

9/% 6erformance 4nalysis!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:;

9/# Scope of 2uture +or!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:;

RE2ERENCE/!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :>

6A1LIC4TI"NS/!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! 97


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8

INDEX OF FIGURES

F%).e !!B F%.( IC #$.%*$e2 ;$ L$(( 2e5e'"pe& .")p $ F$%.*+%'2 C".p! 4 !!!!!!!!!!!!!!!!!!!!! !#

F%).e !!B T.$&(%(". I&e.$%"& "& C+%p 2%(p'$%& M"".e( L$1! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!#

F%).e !!B C."(( (e*%"&$' 5%e1 "# *"&5e&%"&$' )'/ MOSFET 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&

F%).e !3!B Me$'-"%2e-(e%*"&2)*". (.)*).e( "& p-pe (%'%*"& 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7

F%).e !3!B C+$&&e' #".$%"& %& &-*+$&&e' MOSFET 7 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:

F%).e !6!B S+.%&/%& $e 'e&+ 1%+ "# (*$'%&! $.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# SMDG =

MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &<

F%).e !!B >$.%$%"& "# #."& ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# SMDG =

MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! &<

F%).e !!3B >$.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# DMDG ,

φ M = 4!6 e> = MOSFET (.)*).e $.%$%"& "# #."& ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# DMDG ,

φ M = 4!6 e> = MOSFET (.)*).e $.%$%"& "# $*/ ().#$*e p"e&%$' 1%+ '$e.$' 2%.e*%"& "# TMDG ,

φ M = 4!6 e> ,φ M 3 = 4!4e>

= MOSFET (.)*).e !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:


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9

F%).e !3!B T+.e(+"'2 5"'$e 5$.%$%"& 1%+ $e %($'%&e& #". SMDG < φ MA = 4!8 e> =,

DMDG ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4e>

= MOSFET (.)*).e( #". V ds = > !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7:

F%).e !4!B DI:L 5$.%$%"& 1%+ $e %($'%&e& "# SMDG =, DMDG <

φ M A = 4!8 e> ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4 e> = MOSFET (.)*).e(

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7;

F%).e !!B S)+.e(+"'2 ('"pe 5$.%$%"& 1%+ $e %($'%&e& SMDG =, DMDG <

φ M A = 4!8 e> ,φ M = 4!6 e> = $&2 TMDG ,φ M = 4!6 e> ,φ M 3 = 4!4 e> =MOSFET (.)*).e( !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!7>

F%).e !6!B S)+.e(+"'2 2.$%&-*)..e& 5$.%$%"& 1%+ $e 5"'$e #". SMDG =

MOSFET (.)*).e! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!! :$

F%).e !6!B S)+.e(+"'2 2.$%&-*)..e& 5$.%$%"& 1%+ $e 5"'$e #". DMDG

φ M = 4!6 e> = MOSFET (.)*).e φ M 3 = 4!4 e> = MOSFET (.)*).e

,φ M 3 = 4!4e>

= MOSFET (.)*).e(!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:%

F%).e !8!B M$%) .$&(*"&2)*$&*e = $&2 TMDG ,φ M = 4!6e>

,φ M 3 = 4!4e>

= MOSFET (.)*).e(!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!:#

F%).e !9!B O)p) *"&2)*$&*e = MOSFET (.)*).e $ (").*e (%2e %($'%&e&!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!::

F%).e !9!B O)p) *"&2)*$&*e


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0

φ M = 4!6 e> ,φ M 3 = 4!4 e> = MOSFET (.)*).e $ (").*e (%2e %($'%&e&!!!!!!!!!!!!!!!!!!!!!!!:9


13/58

INDEX OF TABLES

Table 7/#/%3 De5%*e p$.$ee.( )(e2 #". (%)'$%"& !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!&;

T$'e !!B Re%"& 1%(e 'e&+ "# +e *+$&&e' $&2 *"%&$%"&( "# #."&-$*/ $e e$' 1"./- #)&*%"&( $ 2%##e.e& %($'%&e& 'e&+( #". DMDG MOSFET

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7%

T$'e !!B M%&%) ().#$*e p"e&%$', $e $&2 .e%"& .e(p"&(%'e #". +.e(+"'2 5"'$e "# DMDG

MOSFET $ 2%##e.e& %($'%&e& 'e&+

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7%

T$'e !!3B Re%"& 1%(e #."& $&2 $*/ $e e$' 1"./-#)&*%"& *"%&$%"&( $ 2%##e.e&

%($'%&e& 'e&+ #". TMDG MOSFET (.)*).e

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7&

T$'e !!4BT+e %&%) ().#$*e p"e&%$' .e(p"&(%'e #". +.e(+"'2 5"'$e "# TMDG MOSFET $

2%##e.e& %($'%&e& 'e&+ 1%+ +e 2e*%2%& $e $&2 .e%"&

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

7&


14/58

ACRONYMS

CGAAB C'%&2.%*$' G$e-A''-A.")&2

CLMB C+$&&e' Le&+ M"2)'$%"&

CMOSB C"p'ee&$. Me$' O%2e Se%*"&2)*".

DGB D")'e G$e

DI:LB D.$%& I&2)*e2 :$..%e. L"1e.%&

DMDGB D)$' M$e.%$' D")'e G$e

DSMB D.$%& S%2e M%($'%&e&

FDSOIB F)'' Dep'ee2 S%'%*"& O& I&()'$".

GAAB G$e A'' A.")&2

HCEB H" C$..%e. E##e*

ICB I&e.$e2 C%.*)%

ITRSB I&e.&$%"&$' Te*+&"'" R"$2$p #". Se%*"&2)*".

LACB L$e.$' A(e.%* C+$&&e'

MISFETB Me$' I&()'$". Se%*"&2)*". F%e'2 E##e* T.$&(%(".

MOSFETB Me$' O%2e Se%*"&2)*". F%e'2 E##e* T.$&(%(".

RFB R$2%" F.e)e&*

SCEB S+". C+$&&e' E##e*

SMDGB S%&'e M$e.%$' D")'e G$e

SEMOIB Se%*"&2)*". O& I&()'$".

SOIB S%'%*"&-"&-I&()'$".

SSMB S").*e S%2e M%($'%&e&


15/58

@II

TMDGB T.%p'e M$e.%$' D")'e G$e

TTLB T.$&(%(". T.$&(%(". L"%*

UTCB U'.$ T+%& C+$&&e'

>LSIB >e. L$.e S*$'e I&e.$%"&


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@III

ABSTRACT

C)..e&', +e ep$&(%"& "# >LSI %&2)(. %( p.%$.%' #"*)((e2 "& +e 1$ " +e e##%*%e&*

"# (e%*"&2)*". 2e5%*e( 1+%*+ %& ).& %( e.ee' 2epe&2e& "& +e $25$&*ee& %& +e

CMOS e*+&"'"! A( +e (*$'%& 2"1& "# 2e5%*e 2%e&(%"&( $.e e%& $.e((%5e, *$..%e.

"%'% .e2)*e2 2)e " 2"p$& #')*)$%"&, $e )&&e''%& e##e* %&*.e$(e( $&2 p-& )&*%"&

'e$/$e *)..e& %&*.e$(e(! M".e p.e*%(e $&2 &"5e' 2e5%*e (.)*).e( $.e .e)%.e2 " e

2e5e'"pe2 #". ($%(#%& +e $"5e .e)%.ee&(! T+e(e &ee2( +$5e 'e2 " 2e5e'"pe& "#

$'e.&$%5e e*+&"'"! T+e 2")'e-$e


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Chapter 1

1 INTRODUCTION

! MOSFE and its scaling& A 2istorical %ers3ecti4e

O5e. +e p$( +%. e$.(, +e ."1+ "# %*."e'e*."&%*(, $)"$%"&, %".$%"& (+$.%&,

(%&$' p."*e((%& +$( (."&' 2epe&2e& "& 5e. '$.e (*$'e %&e.$e2 *%.*)% LSI=

%&2)(.! A25$&*ee& "# *"p)e. $&2 #$(*%&$%& $2e( 1%+ e5e. p"((%'e $pp'%*$%"&(?

e % $)2%", 5%2e", $& pe "# $e ". +%+ (pee2 *")&%*$%"&? .e5"')%"&%e2 +e 1".'2

"# %&e.*"&&e*%5% $&2 e&e.$%&e&! I( $'' *.e2%e2 " +e +%+ (pee2 )'.$ ($'' (%e2,

'"1 p"1e. (e%*"&2)*". 2e5%*e(, (e&(".(, $'' &e1 $e.%$'( $&2 +e%. %p'ee&$%"&

+.")+ >LSI 2e(%&!

I $'' ($.( 1%+ +e %&(%+ "# L%'%ee'2 "# I&()'$e2 G$e F%e'2 E##e* T.$&(%(". %&

9 1+%*+ ".e +e p"e&%$' " ()(%)e +e 5$*)) )e e*+&"'" 1%+ ($'' (%e2

(e%*"&2)*". .$&(%(". e*+&"'" ! T+e #%.( p.$*%*$' e+%%%"& ""/ p'$*e %& 960

K$+& $&2 A%''$ %& +e #". "# +e S%'%*"&-$(e2 Me$' O%2e Se%*"&2)*". F%e'2

E##e* T.$&(%(".


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(*$'e %&e.$%"&


19/58

Figure ..& First $# fabricated by ay 5ast6s de4elo3ment grou3 at Fairc"ild #or3. 789

Figure ..+& ransistor $ntegration on #"i3 dis3laying Moore6s 5a1. 7:9

! O4er4ie1 of MOSFEs

T+e e$' "%2e (e%*"&2)*". #%e'2 e##e* .$&(%(".


20/58

Figure .+.&

I& e&+$&*ee& "2e MOSFET(, $ 5"'$e 2."p $*."(( +e "%2e %&2)*e( $ *"&2)*%&

*+$&&e' e1ee& +e (").*e $&2 2.$%& *"&$*( 2)e " +e #%e'2 e##e*! T+e &$e e&+$&*ee&

"2e .e#e.( " e&+$&*e "# *"&2)*%5% 1%+ %&*.e$(e %& "%2e #%e'2 +$ $.$* *$..%e.( " +e

*+$&&e', $'(" /&"1& $( +e %&5e.(%"& '$e.! T+e *+$&&e' *$& %&*')2e e'e*."&(


21/58

de.ice may be referred to as a metal-insulator-semiconductor 2ET BMIS2ET/7

!3 MOSFE o3eration

.. Metal O


22/58

I# +e MOSFET %( $& &-*+$&&e' MOSFET, +e& +e (").*e $&2 2.$%& $.e & .e%"&( $&2 +e

()(.$e %( $ p .e%"&! I# +e MOSFET %( $ p-*+$&&e' MOSFET, +e& +e (").*e $&2 2.$%&

$.e p .e%"&( $&2 +e "2 %( $ & .e%"&! T+e (").*e %( (" &$e2 e*$)(e % %( +e (").*e "#

+e *+$.e *$..%e.(


23/58

&e$%5e 5"'$e #". p-*+$&&e'= %( $pp'%e2 e1ee& $e $&2 (").*e, +e *+$&&e' 2%($ppe$.(

$&2 "&' $ 5e. ($'' ()+.e(+"'2 *)..e& *$& #'"1 e1ee& +e (").*e $&2 +e 2.$%&!

T+e 2e5%*e $ *"&$%& S%'%*"& "& I&()'$".


24/58

7

5e.%*$' 2%e&(%"&( "# +e .$&(%(". (+")'2 e (*$'e2 +e ($e (*$'%& #$*". %& ".2e. "

$5"%2 +e SCE( $&2 e&().e ""2 e'e*."($%* *"&."' 1+e& #$.%*$%& +e ($''e. 2e5%*e(,

$&2 +e ($e (*$'%& #$*"., +e ()pp' 5"'$e (+")'2 e .e2)*e2 $&2 ()(.$e 2"p%&

*"&*e&.$%"& (+")'2 e %&*.e$(e2!

! Reasons for MOSFE scaling

S$''e. MOSFET( $.e $.$*%5e #". $ &)e. "# .e$("&(! T+e $%& .e$("& " )%'2

.$&(%(".( ($''e. %( " .")p ".e $&2 ".e 2e5%*e( %& $ %5e& *+%p $.e$! T+%( .e()'( %& $

*+%p 1%+ +e ($e #)&*%"&$'% %& $ 'e((e. $.e$, ". *+%p( 1%+ ".e #)&*%"&$'% %& +e

%2e&%*$' $.e$! A( #$.%*$%"& *"(( #". $ (e%*"&2)*". 1$#e. $.e .e'$%5e' #%e2, +e *"( pe.

%&e.$e2 *%.*)%( %( "(' .e'$e2 " +e &)e. "# *+%p( +$ *$& e p."2)*e2 pe. 1$#e.!

He&*e, ($''e. IC( $''"1 ".e *+%p( pe. 1$#e., 2e*.e$(%& +e p.%*e pe. *+%p! I& #$*, "5e.

+e p$( 30 e$.( +e &)e. "# .$&(%(".( pe. *+%p +$( ee& 2")'e2 e5e. 3 e$.( "&*e $

&e1 e*+&"'" &"2e %( %&."2)*e2! F". e$p'e +e &)e. "# MOSFET( %& $

%*."p."*e((". #$.%*$e2 %& $ 4 & e*+&"'" *$& 1e'' e 1%*e $( $& $( %& $ 6

& *+%p! T+%( 2")'%& "# .$&(%(". 2e&(% 1$( #%.( epe.%e&e2 G".2"& M"".e %& 96

$&2 %( *""&' .e#e..e2 " $( M"".e( '$1 !

I %( $'(" )()$' +$ ($''e. .$&(%(".( (1%*+ ".e .$p%2'! F". e$p'e, "&e $pp."$*+ "2%e&(%"& .e2)*%"& %( $ (*$'%& "# +e MOSFET +$ .e)%.e( $'' 2e5%*e (%e( " 2e*.e$(e

p."p".%"&$''! T+e $". 2e5%*e 2%e&(%"&( $.e +e *+$&&e' 'e&+, *+$&&e' 1%2+, $&2

"%2e +%*/&e((! +e& +e $.e (*$'e2 2"1& +e ($e #$*"., +e .$&(%(". *+$&&e'

.e(%($&*e 2"e( &" "2%#, 1+%'e $e *$p$*%$&*e %( *) +$ #$*".! He&*e, +e RC

2e'$ "# +e .$&(%(". (*$'e( 1%+ $ (%%'$. #$*".!

+%'e +%( +$( ee& *"&5e&%"&$'' +e *$(e #". +e "'2e. e*+&"'"%e(, #". +e ($e-"#-+e-$.

MOSFET( .e2)*%"& "# +e .$&(%(". 2%e&(%"&( 2"e( &" &e*e(($.%' .$&(#". " +%+e.

*+%p (pee2 e*$)(e +e 2e'$ 2)e " %&e.*"&&e*%"&( %( ".e (%&%#%*$&!

!6 Scaling 3roblems

M$&)#$*).%& MOSFET( 1%+ )*+ ($''e. *+$&&e' 'e&+( +$& $ %*."e.e %( $ %

*+$''e&e, $&2 +e 2%##%*)'%e( "# (e%*"&2)*". 2e5%*e #$.%*$%"& $.e $'1$( $ 1$.&%&

#$*". %& $25$&*%& %&e.$e2 *%.*)% e*+&"'"! I& .e*e& e$.(, +e ($'' 2%e&(%"& "# +e

MOSFET, )&2e. $ #e1 e&( "# &$&"e.e(, +$( *.e$e2 "pe.$%"&$' .")'e(!


25/58

I&e.$%"& "# %''%"&( "# .$&(%(".( "& $ *+%p +$( ee& .e$'%$'e 2)e " +e p"((%%'% "

p$e.& e5e. ($''e. #e$).e "& (%'%*"& +.")+ "p%*$' '%+".$p+! A( "p%*$' '%+".$p+

e&e.( +e ()-1$5e'e&+ .e%e, '%+ 2%##.$*%"& $&2 %&e.#e.e&*e #." () 1$5e'e&+

p$e.& #e$).e *$)(e( %$e 2%(".2e.! T+e.e#".e, p$e.&%& e*"e( 2%##%*)' 1%+")

$2"p%& .e("')%"& e&+$&*ee& e*+&%)e(!

T+e ITRS( "( .e*e& p."e*%"& p."5%2e( ("e %&(%+ $( " *)..e& $./e 2.%5e.(! F%! 4

%'')(.$e( +$ +e p"1e. *"&()p%"& .e&2 5e.()( p"1e. .e)%.ee&( %( *.e$%& +e

P"1e. G$pJ $/%& " +e De(%& G$pJ +$ +e %&2)(. 2e$' 1%+ $ 2e*$2e $"! T+%( $p %(

*.e$%& $ &ee2 " $&$e p"1e. $ $'' 'e5e'( "# $(.$*%"& $&2 $".' $ +e 2e5%*e 'e5e'!

T+e p"1e. *"&()p%"& %( $pp."%$e2 8

−V th P

= P + P = α fC V

+ V I

+ I A0 s


26/58

Figure .=.+& %o1er #onsum3tion trends 1it" years of scaling. (#ourtesy& $RS +,,:)

T+)( V DD$&2

V th $.e %& *"'%* #". 1+%*+ +e $e "%2e &ee2( " e (*$'e2 .ee&2")('

1+%*+ %& ).& %&*.e$(e( $e )&&e''%& 'e$/$e(! A'(", +%+e. ()(.$e 2"p%& %( )( "

*+e*/ +e (+". *+$&&e' e##e*(


27/58

%$

!6! $ncreased gate-o! F". $& "+e. 2%e'e*.%*( +e 5$')e %( *"&(%2e.$' '"1e., e&2%& "

%&*.e$(e +e )&&e''%& *)..e&, ("e1+$ "pp"(%& +e e&e#%( "# +%+e. 2%e'e*.%* *"&($&!

T+e e.ee $e-(").*e 5"'$e %( *$'*)'$e2 +e (.e&+ "# +e e'e*.%* #%e'2 $'e " e

()($%&e2 +e $e 2%e'e*.%* e#".e (%&%#%*$& 'e$/$e "**).(! S%&*e +e %&()'$%&

2%e'e*.%* %( $2e +%&&e., +e e'e*.%* #%e'2 $&%)2e 1%+%& % "e( +%+ #". $ *"&($&

5"'$e! T+%( .e)%.e( )(%& '"1e. 5"'$e( 1%+ +e +%&&e. 2%e'e*.%*!

!6!3 $ncreased >unction lea'age

T" $/e 2e5%*e( ($''e., )&*%"& 2e(%& +$( e*"e ".e *"p'e, #".*%& "

+%+e. 2"p%& 'e5e'(, (+$''"1e. )&*%"&(, +$'" 2"p%& e*!6,7 $'' " .e2)*e 2.$%& %&2)*e2

$..%e. '"1e.%&


28/58

!6!4 5o1er out3ut resistance

F". $&$'" #)&*%"&(, ""2 $%& .e)%.e( +%+ MOSFET ")p) .e(%($&*e, 1+%*+ %( " ($,

+e MOSFET *)..e& (+")'2 5$. "&' $ '%'e 1%+ +e $pp'%e2 2.$%&-"-(").*e 5"'$e! A(

2e5%*e( $.e $2e ($''e., +e %')e&*e "# +e 2.$%& *"pee( ".e ()**e((#)'' 1%+ +$ "# +e $e 2)e " +e ."1%& *'"(e&e(( "# +e(e 1" e'e*."2e(, %&*.e$(%& +e (e&(%%5% "# +e

MOSFET *)..e& " +e 2.$%& 5"'$e! T" *")&e. +e .e()'%& 2e*.e$(e %& ")p) .e(%($&*e,

*%.*)%( $.e $2e ".e *"p'%*$e2, e%+e. .e)%.%& ".e 2e5%*e(, #". e$p'e

+e *$(*"2e $&2 *$(*$2e $p'%#%e.(, ". #ee2$*/ *%.*)%. )(%& "pe.$%"&$' $p'%#%e.(, #".

e$p'e $ *%.*)% '%/e +$ %& +e $2$*e& #%).e!

!6! 5o1er transconductance

T+e .$&(*"&2)*$&*e "# +e MOSFET 2e*%2e( %( $%& $&2 %( 2%.e*' p."p".%"&$' " +"'e

". e'e*."& "%'% 2epe&2%& "& 2e5%*e pe, #". '"1 2.$%& 5"'$e(! A( MOSFET

2%e&(%"& %( 2e*.e$(e2, +e #%e'2( %& +e *+$&&e' %p."5e $&2 +e 2"p$& %p).% 'e5e'(

%&*.e$(e(! :"+ *+$&e( 2e*.e$(e +e *$..%e. "%'%, $&2 +)( +e .$&(*"&2)*$&*e! A(

*+$&&e' 'e&+( $.e 2e*.e$(e2 1%+ &" p."p".%"&$' .e2)*%"& %& 2.$%& 5"'$e, %&*.e$(%& +e

e'e*.%* #%e'2 %& +e *+$&&e', +e .e()' %( '%%%& +e *)..e&, 5e'"*% ($).$%"& "# +e

*$..%e.(, $&2 +e .$&(*"&2)*$&*e!

!6!6 $nterconnect ca3acitance

C"&5e&%"&$'', (1%*+%& %e 1$( .")+' p."p".%"&$' " +e $e *$p$*%$&*e "#

MOSFET(! O& +e "+e. +$&2, 1%+ .$&(%(".( e*"%& ($''e. $&2 &)e. "# .$&(%(".(

e%& '"*$e2 "& +e *+%p, %&e.*"&&e* *$p$*%$&*e


29/58

P"1e. MOSFET( $.e $ 2$&e. "# +e.$' .)&$1$! A( +e%. "&-($e .e(%($&*e %&*.e$(e(

1%+ epe.$).e, %# +e '"$2 %( $pp."%$e' $ *"&($&-*)..e& '"$2 +e& +e p"1e. '"((

%&*.e$(e( *"..e(p"&2%&', e&e.$%& e.$ +e$! +e& +e +e$ (%&/ %( &" %&e''%e& "

.e$%& +e epe.$).e '"1 e&")+, +e )&*%"& epe.$).e $ %&*.e$(e .$p%2' $&2

)&*"&."''$', .e()'%& %& 2e5$($%"& "# +e 2e5%*e!

!6!8 %rocess 4ariations

%+ MOSFET( e*"%& ($''e., +e &)e. "# $"( %& +e (%'%*"& +$ *.e$e $& "# +e

.$&(%(".( p."pe.%e( %( e*"%& #e1e., 1%+ +e .e()' +$ *"&."' "# 2"p$& &)e.( $&2

p'$*ee& %( ".e .$&2"! D).%& *+%p $&)#$*).%&, .$&2" p."*e(( 5$.%$%"&( $##e* $''

.$&(%(". 2%e&(%"&(B 'e&+, 1%2+, )&*%"& 2ep+(, "%2e +%*/&e(( etc., $&2 e*"e $

.e$e. pe.*e&$e "# "5e.$'' .$&(%(". (%e $( +e .$&(%(". (+.%&/(! T+e .$&(%(". *+$.$*e.%(%*( e*"e 'e(( *e.$%&, ".e ($%(%*$'! T+e .$&2" &$).e "# $&)#$*).e

e$&( 1e 2" &" /&"1 1+%*+ p$.%*)'$. e$p'e MOSFET( $*)$'' 1%'' e&2 )p %& $

p$.%*)'$. %&($&*e "# +e *%.*)%! T+%( )&*e.$%& #".*e( $ 'e(( "p%$' 2e(%& e*$)(e +e

2e(%& )( 1"./ #". $ .e$ 5$.%e "# p"((%'e *"p"&e& MOSFET( 0!

!6!9 Modeling c"allenges

M"2e.& IC( $.e *"p)e.-(%)'$e2 1%+ +e $% "# "$%&%& 1"./%& *%.*)%( #." +e 5e.

#%.( $&)#$*).e2 '"! A( 2e5%*e( $.e %&%$).%e2, +e 2%##%*)' "# +e p."*e((%& $/e( %

+$.2 " p.e2%* e$*' 1+$ +e )'%$e 2e5%*e( '""/ '%/e, $&2 "2e''%& "# p+(%*$'

p."*e((e( e*"e( ".e *+$''e&%& $( 1e''! I& $22%%"&, %*."(*"p%* 5$.%$%"&( %& (.)*).e

2)e (%p' " +e p."$%'%(%* &$).e "# $"%* p."*e((e( .e)%.e ($%(%*$' p.e2%*%"&(!

T+e(e #$*".( *"%&e " $/e $2e)$e (%)'$%"& $&2 .%+ +e #%.( %e $&)#$*).e

2%##%*)'!

T" %&%%e +e 2%##%*)'%e( "# ($'' (%e )'/ MOSFET(, Re(e$.*+e.( $&2 e&%&ee.(

2%(*"5e. (e5e.$' $'e.&$%5e 2e5%*e (.)*).e(, 1+%*+ +e e*+&"'" *$& #).+e. (*$'e2

2"1& 1%+ $ %p."5e2 pe.#".$&*e! T+e(e $.e, 2")'e $e


30/58

L"1e.%& +e (").*e2.$%& )&*%"& 2ep+(


31/58

!7! Gate Engineering ec"ni?ues 2ig"-'

dielectric

H%+-/e$' $e( 1e.e %&."2)*e2 %&" $(( p."2)*%"& %& 007 I&e' %& +e 4 &

CMOS e*+&"'" e&e.$%"&! T+%( %( +e #%.( %e +$ .$2%%"&$' "%2e( ". "&%.%2e( +$5e

ee& .ep'$*e2 %& $e ($*/(, " e&$'e *"&%&)")( (*$'%& "# +e EOT!

Metal Gate

I&%%$'', p"'-S%+%+-/ *"%&$%"& $e ($*/ 1$( *"&(%2e.e2 $( $ .")e " %p."5%& $e

'e$/$e! H"1e5e. +e".e%*$' ()2%e( $&2 epe.%e&$' 2$$ (+"1 "%'% 2e.$2$%"&

*"p$.e2 " +e )(e "# e$' $e(! Depe&2%& "& +e $e 2%e'e*.%*, +e 1"./ #)&*%"&

5$.%e( 2)e " 2%##e.%& $&2 $'%&e&(!

Multi-Material Gate

O&e "# +e p."%&e& e$&( " e .%2 "# +" *$..%e. e##e*


32/58

Multi3le Gate

Figure .;.+& %rogress of t"e MOSFE ec"nology t"roug" multi3le-gates (79)

A p"e&%$' *$&2%2$e " *"&%&)e +e MOSFET (*$'%& #).+e. %( +e #)''-2ep'ee2 (%'%*"&-

"&-%&()'$".


33/58

6

"# +e &)e. $&2 +e "%'% "# e'e*."&( $&2 +"'e( $( 1e'' $( 2.%5%& *)..e& ecti4es

T+e $%& "e*%5e( "# +%( +e(%( $.e " )&2e.($&2 +e (.)*).e 2e(%& "# $e e&%&ee.e2

DG MOSFET( $'"& 1%+ %( $*/ $e %($'%&e&, 1+%'e *"p$.%& +e 1%+ (%&'e

$e.%$' 2")'e $e


34/58

$e.%$' $e 1%+ 2%##e.e& 1"./ #)&*%"& "+ %& "p $&2 "" "# +e 2e5%*e %&(e$2 $

(%&'e $e.%$' $e! F).+e.".e " .e2)*e +" *$..%e. e##e*


35/58

Chapter 2

2 LITERATURE REVIEW

! Double gate MOSFEs

T+e 2")'e-$e


36/58

Figure +..+& #ross-sectional 4ie1 of double gate MOSFE structure

D")'e-$e MOSFET +$( 1" $e( (%)'$&e")(' *"&."''%& +e *+$.e %& +e +%& (%'%*"&

"2 '$e., $''"1%& #". 1" *+$&&e'( #". *)..e& #'"1! :e*$)(e +e (%'%*"& #%' %( +%&, $

2%.e* *+$.e *")p'%& e%(( e1ee& +e #."& $&2 $*/ $e %&5$.%$' 3, %')e&*%& +e

e.%&$' *+$.$*e.%(%*( "# +e 2e5%*e

General DG O3eration

T+e 2e5%*e *$& e "pe.$e2 %& (e5e.$' 1$( 36!T+e 5"'$e $pp'%e2 "& +e $e e.%&$'(

*"&."'( +e e'e*.%* #%e'2, 2ee.%&%& +e $")& "# *)..e& #'"1 +.")+ +e *+$&&e'! T+e

"( *""& "2e "# "pe.$%"& %( " (1%*+ "+ $e( (%)'$&e")('! A&"+e. "2e %( "

(1%*+ "&' "&e $e $&2 $pp' $ %$( " +e (e*"&2 $e


37/58

(1) F."& *+$&&e' $'"&e *"&2)*%&, +e $*/ *+$&&e' e%& e%+e. 2ep'ee2 ". $**))'$e2!

(2) :"+ *+$&&e'( *"&2)*%&, "+ ". e%+e. "# +e *+$&&e'( e%& %& 1e$/ ". (."&

%&5e.(%"&!

T+e *)..e&-5"'$e *+$.$*e.%(%*( "# +e 2e5%*e 1%+ +e #."& *+$&&e' %& (."& %&5e.(%"&

$&2 +e $*/ *+$&&e' e%+e. %& $**))'$%"& ". %& 2ep'e%"& +$( ee& "2e''e2 $&$'%*$''

37,38,39 S%&*e (%'%*"& #%'( $.e +%&, +e e'e*.%*$' p."pe.%e( "# MOSFET( #$.%*$e2 $.e

%&+e.e&' %')e&*e2 +e *+$.e *")p'%& e1ee& +e #."& $&2 $*/ $e(! D)e "

e.ee' ($'' 2e5%*e 2%e&(%"&(, '"1 5"'$e "pe.$%"& 1%'' e $&2$". 1+e.e +e '"1

+.e(+"'2 5"'$e %( .e)%.e2 40!

! Gate engineered DG MOSFEs

G$e e&%&ee.%& "# +e MOSFET e$&(, +e "$' $e $e.%$' "# +e MOSFET %(

e&%&ee.e2 ". 2%5%2e2 %&" 1" $e.%$'( ". +.ee $e.%$'(! I# +e "$' $e.%$' 'e&+ %( +e

*"%&$%"& "# 1" 2%##e.e& $e.%$'( +$5%& 2%##e.e& e$' 1"./ #)&*%"&, +e& +e

MOSFET (.)*).e %( /&"1& $( 2)$' $e.%$' $e


38/58

#." pe&e.$%& %&" +e *+$&&e'! T+%( (ep p"e&%$' %( +)( .e(p"&(%'e #". '"1e. ()


39/58

+.e(+"'2 'e$/$e *)..e&, .e2)*e2 DI:L e##e*( $&2 %&*.e$(e2 ")p) .e(%($&*e %& DMG

MOSFETS! T+%( (" *$''e2 $e 1"./-#)&*%"& e&%&ee.%& $''"1( +e DMG 2e5%*e( " +$5e

($e +.e(+"'2 5"'$e #". $ .e2)*e2 2"p%& *"&*e&.$%"& %& +e *+$&&e' .e%"&, .e()'%& %&

ee. %)&% " "%'% 2e.$2$%"& $&2 +e&*e +%+e. .$&(*"&2)*$&*e 4!

!3 Ad4antages of DG MOSFEs

%! .e2)*%"& "# %"##!

%%! )&2"pe2 *+$&&e' e'%%&$e( %&.%&(%*

%%%! p$.$ee. #')*)$%"&( $&2 %&%%e(

%5! %p).% (*$e.%&!

5! 2")'e $e $''"1( #". +%+e. *)..e& 2.%5e

*$p$%'%

5%! ee. *"&."' "# (+". *+$&&e' e##e*(!

!4 #"allenges of DG MOSFEs

%! C"&."' "# +.e(+"'2 5"'$e!

%%! F$.%*$%"& "# +e DG-FET %( 2%##%*)'!

%%%! A'%&e& "# "+ $e( %( +$.2 " $*+%e5e,

%5! M%($'%&e2 $e( .e()' %& e.$ *$p$*%$&*e $&2 '"(( "# *)..e& 2.%5e!

! Gate misalignment of DG MOSFEs

M%($'%&e& e1ee& "p $&2 "" G$e "# +e DG MOSFET( $.e +e "( *""&

p"((%%'% 2).%& #$.%*$%"&! :e*$)(e "# %($'%&e& ("e p$. "# +e *+$&&e' +$( "&' "&e

$e $&2 e+$5e( $( $ (%&'e $e *"&5e&%"&$' )'/ MOSFET! F).+e.".e 2)e " +e $(e&

"# e'e*.%* #%e'2, +e e'e*."($%* *"&."' "5e. +e $e .e2)*e( $&2 +e *+$&&e' .e(%($&*e

%&*.e$(e(, +e.e#".e 2.%5e *)..e& 2e*.e$(e(! T+e %($'%&e& *$& e +$ppe&e2 e%+e. (%2e "#

+e 2e5%*e? %!e! 2.$%& (%2e ". (").*e (%2e! I# +e $e (+%#e2 "1$.2( (").*e (%2e +e& % %(

*$''e2 $( 2.$%& (%2e %($'%&e&


40/58

!6 Effect of misalignment& 3ast 1or's

T+e >LSI %&2)(. +$( ee& 2e5e'"p%& 'e$p( $&2 ")&2( %& +e p$( #e1 2e*$2e( (%&*e %(

%&*ep%"& $&2 % %( ("'e' *.e2%e2 " +e *"&%&)")( 2%e&(%"&$' (*$'%& "# MOSFET(! T+e

"( (.$%+#".1$.2 $25$&$e( "# MOSFET (*$'%& $.e +%+e. p$*/%& 2e&(%, '"1

2&$%* p"1e. 2%((%p$%"& $&2 %p."5ee& "# (pee2 4! F).+e., +e (.%&e& 2"1&

(*$'%& "# *"p'ee&$. e$'-"%2e-(e%*"&2)*".


41/58

#)&*%"& "# +e e$' $e &e$. +e (").*e


42/58

3

#)&*%"&( .e()'( %& $ (ep-'%/e ().#$*e p"e&%$' p."#%'e e'"1 +e e$' %&e.#$*e e&().%& +e

(*.ee&%& "# +e %&%) ().#$*e p"e&%$' #." +e 2.$%& 5"'$e 5$.%$%"&(! T+e e$' $e

M %( +)( .%+#)'' /&"1& $( +e Screen Gate $&2 +e

e$'

M $( +e Control Gate!

Re22 et al. $2"pe2 +%( e*+&%)e " p."p"(e 2")'e-$e.%$' 2")'e-$e


43/58

e&e.$'' epe*e2 $&2 60 " 80 %($'%&e& %( *"&(%2e.e2 " e "'e.$'e %& ("e *%.*)%

$pp'%*$%"&(!

F". +e #%.( %e %& 004, E! C! S)& $&2 ;! :! K)" 60 $&$'(e2 +e $e %($'%&e& e##e*

"& +e +.e(+"'2 5"'$e "# 2")'e-$e )'.$+%& #)'' 2ep'ee2 (%'%*"&-"&-%&()'$". &MOS

2e5%*e( )(%& $ *"p$* "2e''%&! T+e $'(" *"&(%2e. +e #.%&%& e'e*.%* #%e'2 e##e* "

p.e2%* +e $**).$e e+$5%"). "# +e +.e(+"'2 5"'$e!

I& 00, C! Y%& $&2 C! H! C+$& 6 %&5e(%$e2 +e S").*eD.$%& A(e.%* E##e*( D)e

" G$e M%($'%&e& %& P'$&$. D")'e-G$e MOSFET( "+ epe.%e&$' 2$$ $&2

(%)'$%"& .e()'(! T+e #")&2 +$, +e "5e.'$p .e%"& $ 2.$%& (%2e *$& .e2)*e( DI:L, 1+%'e

+e "5e.'$p .e%"& $ (").*e (%2e 2e*.e$(e( 2.$%& (%2e *$p$*%$&*e $&2 $e 'e$/$e *)..e&!

T+e $'(" *"%. +$ +e *%.*)% 1%'' 1"./( 1%+") $& 2e.$2$%"& 1%+ $ "p%$'

%($'%&e& 'e&+ "# 0 "# "$' $e 'e&+!

I& 008, A! K.$&% $&2 G! A! A.(."& 6 ()2%e2 %& +%( .e(e$.*+ +$, $*/ $e

%($'%&e& *$& e "'e.$e2 1%+") $& (%&%#%*$& 2e.$2$%"& %& *)-"## #.e)e&* $&2

%&.%&(%* 5"'$e $%& #". )'.$ '"1 5"'$e $&$'" $&2 .$2%" #.e)e&*


44/58

2%##e.e& p$.$ee.( "# TMDG MOSFET (.)*).e( $.e $'(" *"p$.e2 1%+ .e(pe*%5e

*")&e.p$.( "# DMDG $&2 SMDG!


45/58

Chapter 3

3 SIMULATION METHODOLOGY

3! $ntroduction

M"(' #". 2e5%*e (%)'$%"& p).p"(e $'$( 2e5%*e (%)'$". $.e )(e2! ATLAS %( $ 5e.

p"1e.#)' ""' %5e( *""& *$p$%'%%e( #". p+(%*$''-$(e2 1"


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III! Re%"&( 1%+%& +e e(+ $.e $((%&e2 " 2%##e.e& $e.%$'( $( .e)%.e2 " *"&(.)* +e

2e5%*e! F". e$p'e, +e (pe*%#%*$%"& "# $ MOS 2e5%*e .e)%.e( +e (pe*%#%*$%"& "#

(%'%*"& $&2 (%'%*"& 2%"%2e .e%"&(!

I>!A#e. +e .e%"&( $.e 2e#%&e2, +e '"*$%"& "# e'e*."2e( %( (pe*%#%e2!

>! T+e #%&$' (ep %( " (pe*%# +e 2"p%& %& e$*+ .e%"&!

T" 2e#%&e $ (.)*).e )(%& *"$&2 '$&)$e, +e #"''"1%& #"). ()-(e*%"&( )( e

(pe*%#%e2 %& +e p."pe. (e)e&*e $( '%(e2!

S3ecifying t"e initial mes"

T+e.e $.e +.ee ($ee&( #". (pe*%#%& $ %&%%$' e(+B

I! Mes" statement

T" (pe*%# $ e(+ +e #%.( ($ee& )( eB

MESH SPACE!MULT>ALUEV

T+%( %( #"''"1e2 $ (e.%e( "# @!MESH $&2 Y!MESH ($ee&(!

@!MESH LOCATION>ALUEV SPACING>ALUEV Y!MESH

LOCATION>ALUEV SPACING>ALUEV

T+e SPACE!MULT p$.$ee. 5$')e %( )(e2 $( $ (*$'%& #$*". #". +e e(+ *.e$e2 +e

@!MESH $&2 Y!MESH ($ee&(! T+e 2e#$)' 5$')e %( ! >$')e( .e$e. +$& 1%'' *.e$e $

'"$'' *"$.(e. e(+ #". #$( (%)'$%"&! >$')e( 'e(( +$& 1%'' *.e$e $ '"$'' #%&e. e(+

#". %&*.e$(e2 $**).$*! T+e @!MESH $&2 Y!MESH ($ee&( $.e )(e2 " 2e#%&e +e

'"*$%"&( %& %*."&( "# 5e.%*$' $&2 +".%"&$' '%&e(, .e(pe*%5e', "e+e. 1%+ +e 5e.%*$' ".

+".%"&$' (p$*%& $(("*%$e2 1%+ +$ '%&e!

II! Elimination statement

A#e. *"p'e%"& "# %&%%$' e(+%&, "&e *$& .e"5e .%2 '%&e( %& (pe*%#%e2 .e%"&(! T+%( %(

p%*$'' 2"&e %& .e%"&( "# +e 2e5%*e 1+e.e $ *"$.(e .%2 %( epe*e2 " e e&")+ ()*+ $(

+e ()(.$e! T+e e'%%&$%"& "# .%2 '%&e( %( *"p'ee )(%& +e ELIMINATE ($ee&! T+e

ELIMINATE ($ee& $/e $1$ e5e. (e*"&2 e(+ '%&e %& +e p$.%*)'$. 2%.e*%"& #."

1%+%& $ (pe*%#%e2 .e*$&'e! F". e$p'e, +e ($ee&B

ELIMINATE COLUMNS @!MIN0 @!MA@4 Y!MIN0!0 Y!MA@3


47/58

E'%%&$e( e5e. (e*"&2 5e.%*$' .%2 '%&e 1%+%& +e .e*$&'e ")&2e2 0, 4, 0 $&2

3 %*."&(!

III!Region statement

O&*e +e e(+ %( (pe*%#%e2, e5e. p$. "# % )( e $((%&e2 $ $e.%$' pe! T+%( %( 2"&e

1%+ REGION ($ee&(! F". e$p'eB

REGION &)e.%&ee.V $e.%$'WpeV p"(%%"& p$.$ee.(V

Re%"& &)e.( )( ($. $ $&2 $.e %&*.e$(e2 #". e$*+ ()(e)e& .e%"& ($ee&!

M$%) 00 2%##e.e& .e%"&( *$& e 2e#%&e2 %& ATLAS! A '$.e &)e. "# $e.%$'( $.e

e%(%&! I# $ *"p"(%%"&-2epe&2e& $e.%$' pe %( (pe*%#%e2, +e $&2 *"p"(%%"&

#.$*%"&( *$& $'(" e 2e#%&e2 %& +e REGION ($ee&!

I>!%osition statement

T+e p"(%%"& p$.$ee.( $.e (pe*%#%e2 %& %*."&( )(%& +e @!MIN, @!MA@, Y!MIN, $&2

Y!MA@ p$.$ee.(! I# +e p"(%%"& p$.$ee.( "# $ &e1 ($ee& "5e.'$p +"(e "# $ p.e5%")(

REGION ($ee&, +e "5e.'$ppe2 $.e$ %( $((%&e2 $( +e $e.%$' pe "# +e &e1 .e%"&!

S3ecifying Electrodes

O&*e +e .e%"&( $&2 $e.%$'( +$5e (pe*%#%e2, $ 'e$( "&e e'e*."2e (+")'2 e 2e#%&e +$

1%'' *"&$*( $ (e%*"&2)*". $e.%$'! T+%( %( $**"p'%(+e2 1%+ +e ELECTRODE

($ee&! F". e$p'eB

ELECTRODE NAMEe'e*."2e &$eV p"(%%"&Wp$.$ee.(V

T+e $%) &)e. "# e'e*."2e( +$ *$& e (pe*%#%e2 %( 0! M".e +$& "&e e'e*."2e

($ee&( $ +$5e +e ($e e'e*."2e &$e! N"2e( +$ $.e $(("*%$e2 1%+ +e ($e

e'e*."2e &$e $.e .e$e2 $( e%& e'e*.%*$'' *"&&e*e2!

S3ecifying Do3ing

F". (pe*%#%& +e 2"p%& DOPING ($ee& %( )(e2 %& ATLAS! F". e$p'eB

DOPING 2%(.%)%"&WpeV 2"p$&WpeV p"(%%"&Wp$.$ee.(V

Analytical Do3ing %rofiles


48/58

A&$'%*$' 2"p%& p."#%'e( $.e 1" pe(? %!e )&%#". ". G$)((%$& #".(!


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9

I! !niform do3ing 3rofile

T+e p$.$ee.( 2e#%&%& +e $&$'%*$' 2%(.%)%"& $.e (pe*%#%e2 %& +e DOPING ($ee&

DOPING UNIFORM CONCENTRATIONE6 N!TYPE REGION

T+e $"5e 2"p%& ($ee& %5e( $ )&%#". &-pe 2"p%& 2e&(% "# 06 *-3 %& +e .e%"&

+$ 1$( p.e5%")(' '$e''e2 $( .e%"& X! T+e p"(%%"& p$.$ee.(B @!MIN, @!MA@, Y!MIN,

$&2 Y!MA@ *$& e )(e2 %&(e$2 "# $ .e%"& &)e.!

II! Gaussian do3ing 3rofile

T+e p$.$ee.( 2e#%&%& +e $&$'%*$' 2%(.%)%"& $.e (pe*%#%e2 %& +e DOPING ($ee&

DOPING GAUSSIAN CONCENTRATIONE8 CHARACTERISTIC0!0 P!TYPE

@!LEFT0!0 @!RIGHT!0 PEAK0!

T+e $"5e 2"p%& ($ee& %5e($ $ p-pe G$)((%$& p."#%'e 1%+ $ pe$/ *"&*e&.$%"& "#

08

*-3

! T+%( ($ee& (pe*%#%e( +$ +e pe$/ 2"p%& %( '"*$e2 $'"& $ '%&e #." 0 "

%*."&(! I# $ G$)((%$& p."#%'e %( e%& $22e2 " $& $.e$ +$ 1$( $'.e$2 2e#%&e2 1%+ +e

"pp"(%e 2"p$& pe, ") *$& )(e +e ;UNCTION p$.$ee. " (pe*%# +e p"(%%"& "# +e

)&*%"& 2ep+ %&(e$2 "# (pe*%#%& +e ($&2$.2 2e5%$%"& )(%& +e CHARACTERISTIC

p$.$ee.

. Defining material 3arameters and models

O&*e +e e(+, e"e., $&2 2"p%& p."#%'e( $.e *"p'ee2, "&e *$& *+$&e +e

*+$.$*e.%(%*( "# e'e*."2e(, *+$&e +e 2e#$)' $e.%$' p$.$ee.(, $&2 2e*%2e 1+%*+

p+(%*$' "2e'( ATLAS 1%'' )(e 2).%& +e 2e5%*e (%)'$%"&! T+e(e e+$5%").( $.e #%&%(+e2

)(%& +e CONTACT, MATERIAL, $&2 MODELS ($ee&( .e(pe*%5e'! Ip$*

%"&%$%"& "2e'( *$& e e&$'e2 )(%& +e IMPACT ($ee&! I&e.#$*e p."pe.%e( $.e (e

)(%& +e INTERFACE ($ee&!

.. S3ecifying #ontact #"aracteristics

0or' function for Gates or Sc"ott'y #ontacts

T+e *"&$* e1ee& e'e*."2e $&2 (e%*"&2)*". $e.%$' %( $(()e2 2e#$)' $( "+%*! I#

$ 1"./ #)&*%"& %( (pe*%#%e2, +e e'e*."2e e+$5e( $( $ S*+"/ *"&$*! T+e CONTACT

($ee& %( )(e2 " 2e#%&e +e e$' 1"./ #)&*%"& "# "&e ". ".e e'e*."2e(! T+e NAME p$.$ee. %( )(e2 " %2e&%# 1+%*+ e'e*."2e 1%'' +$5e %( p."pe.%e( "2%#%e2!


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30

T+e ORKFUNCTION p$.$ee. (e( +e 1"./ #)&*%"& "# +e e'e*."2e! F". e$p'e, +e

($ee&B

CONTACT NAME$e ORKFUNCTION4!8

T+e 1"./ #)&*%"& "# +e $e e'e*."2e (e( " 4!8e>! T+e 1"./ #)&*%"&( "# (e5e.$'

*""&' )(e2 *"&$* $e.%$'( $ e (pe*%#%e2 )(%& +e &$e "# +e $e.%$'! "./

#)&*%"&( #". ALUMINUM, N!POLYSILICON, P!POLYSILICON, TUNGSTEN, $&2

TU!DISILICIDE *$& e (pe*%#%e2 %& +%( 1$! T+e #"''"1%& ($ee& (e( +e 1"./ #)&*%"&

#". $& &-pe p"'(%'%*"& $e *"&$*!

CONTACT NAME$e N!POLYSILICON

T+e CONTACT ($ee& *$& $'(" e )(e2 " 2e#%&e $..%e. $&2 2%p"'e '"1e.%& "# +eS*+"/ $..%e. +e%+! :$..%e. '"1e.%& %( e&$'e2 (pe*%#%& +e :ARRIER p$.$ee.,

1+%'e 2%p"'e '"1e.%& %( (pe*%#%e2 )(%& +e ALPHA p$.$ee.! F". e$p'e, +e ($ee&B

CONTACT NAME$&"2e ORKFUNCTION4!9 :ARRIER ALPHA!0e-7

T+e 1"./ #)&*%"& "# $&"2e S*+"/ *"&$* (e( " 4!9e> e&$'e( $..%e. '"1e.%& $&2 #%e(

*"e##%*%e& "# +e 2%p"'e '"1e.%& " &!

Setting #urrent Boundary #onditions

T" $'e. $& e'e*."2e #." 5"'$e *"&."' " *)..e& *"&."', CONTACT ($ee& %( $'("

)(e2! F". (%)'$%& 2e5%*e( C)..e& *"&."''e2 e'e*."2e( $.e )(e#)', 1+e.e +e *)..e& %(

+%+' .e(p"&(%5e " 5"'$e!

T+e ($ee& #". *)..e& ")&2$. *"&2%%"&( %(B

CONTACT NAME2.$%& CURRENT

He.e, *+$&e( +e 2.$%& e'e*."2e " *)..e& *"&."'! T+e NETON ". :LOCK ("')%"&

e+"2( $.e &e*e(($. #". $'' (%)'$%"&( 1%+ $ *)..e& ")&2$. *"&2%%"&!

Defining E


51/58

T+e $"5e ($ee& (pe*%#%e( $ p$.$''e' .e(%(". $&2 *$p$*%". "# 0 "+( $&2 0 pF

.e(pe*%5e' %& (e.%e( 1%+ $ ZH %&2)*".! N"e +$ %& D (%)'$%"&(, +e(e p$((%5e

e'ee& 5$')e( $.e (*$'e2 +e 1%2+ %& +e +%.2 2%e&(%"&! S%&*e %& D ATLAS $(()e( $

Z 1%2+, +e .e(%($&*e e*"e( 0 [-Z!

D%(.%)e2 *"&$* .e(%($&*e #". $& e'e*."2e *$& e (pe*%#%e2 )(%& +e CON!RESIST

p$.$ee.! F". e$p'e, +e ($ee&B

CONTACT NAME(").*e CON!RESISTANCE0!0

T+e $"5e ($ee& (pe*%#%e( +$ +e (").*e *"&$* +$( $ 2%(.%)e2 .e(%($&*e "# 0!0

[*!

Floating #ontacts

F". (pe*%#%& $ #'"$%& e'e*."2e +e CONTACT ($ee& %( $'(" )(e2! T+e.e $.e

*"p'ee' 1" 2%##e.e& (%)$%"&( 1+e.e #'"$%& e'e*."2e( $.e (%&%#%*$&! T+e #%.(

*"&2%%"& %( #". #'"$%& $e e'e*."2e( )(e2 %& EEPROM $&2 "+e. p.".$$'e 2e5%*e(!

T+e (e*"&2 *"&2%%"& %( +e *"&$*( 1%+ +e (e%*"&2)*". $e.%$'( ()*+ $( #'"$%& #%e'2

p'$e( %& +%+ p"1e. 2e5%*e(!

F'"$%& $e( $.e e&$'e2 2e#%&%& +e p$.$ee. FLOATING "& +e CONTACT

($ee&! F". e$p'e, +e ($ee&B

CONTACT NAME#$e FLOATING

T+e $"5e ($ee& %5e( +$ +e e'e*."2e &$e2 #$e 1%'' e #'"$%& $&2 +$ *+$.e

")&2$. *"&2%%"&( 1%'' $pp'!

F". 2%.e* *"&$*( " +e (e%*"&2)*"., +e FLOATING p$.$ee. *$&&" e )(e2! T+%(

pe "# #'"$%& e'e*."2e %( e( (%)'$e2 2e#%&%& *)..e& ")&2$. *"&2%%"&( "& +e

CONTACT ($ee&! F". e$p'e, +e ($ee&B

CONTACT NAME2.$%& CURRENT

T+e $"5e ($ee& %5e( *)..e& ")&2$. *"&2%%"&( #". +e e'e*."2e &$e2 2.$%&! O&

()(e)e& SOL>E ($ee&(, +e 2.$%& *)..e& ")&2$. *"&2%%"& 1%'' 2e#$)' " e."

*)..e&, +e.e#".e #'"$%& +e *"&$*!


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S"orting 1o #ontacts oget"er

I %( #e$(%'e %& ATLAS " (+". 1" ". ".e *"&$* "e+e. (" +$ 5"'$e( "& "+

*"&$*( $.e ($e! T+%( %( )(e#)' #". $& e*+&"'"%e( #". e$p'e 2)$' $e MOSFET(!

T+e.e $.e ("e e+"2( #". $*+%e5%& +%( 2epe&2%& "& +"1 +e (.)*).e 1$( ".%%&$''

2e#%&e2!

I# +e (.)*).e %( (pe*%#%e2 )(%& ATLAS (&$, "&e *$& +$5e &)e. "# ELECTRODE

($ee&( 1%+ +e ($e NAME p$.$ee. (pe*%#%& 2%##e.e& '"*$%"&( %&(%2e +e 2e5%*e

(.)*).e! I& +%( *$(e, +e $.e$( (pe*%#%e2 " e e'e*."2e( 1%'' e *"&(%2e.e2 $( +$5%& +e

(%%'$. $pp'%e2 5"'$e! A (%&'e *)..e& 1%'' *"e %&" 5%e1 *"%&%& +e *)..e& +.")+

"+ ELECTRODE $.e$(!

Ma'ing an O3en #ircuit #ontact

I %( "#e& &e*e(($. " *$.. ") $ (%)'$%"& 1%+ $& "pe& *%.*)% "& "&e "# +e (pe*%#%e2

e'e*."2e(! T+e.e $.e +.ee 2%(%&* e+"2( " *.e$e $& "pe& *%.*)% *"&$*!

I! T+e #%.( e$&( %( " "$'' .e"5%& $& e'e*."2e #." +e (.)*).e #%'e!

II! T+e (e*"&2 1$ %( " $22 $& .ee&2")(' '$.e ')pe2 .e(%($&*e! F". e$p'e, 000 [

"&" +e *"&$* " e $2e "pe& *%.*)%!

III! T+e +%.2 e$&( %( " (1%*+ +e ")&2$. *"&2%%"&( "& +e *"&$* " e *.e$%& "pe&

*%.*)% #." 5"'$e *"&."''e2 " *)..e& *"&."''e2 $&2 +e& 2e#%&%& $ 5e. &e'%%'e

*)..e& +.")+ +$ e'e*."2e!

T+e $"5e e+"2( $.e p"((%'e ) %# $ #'"$%& .e%"& %( e&e.$e2 1%+%& +e (.)*).e, +e&

&)e.%*$' *"&5e.e&*e $ +$5e ("e p."'e! S" +e (e*"&2 e+"2 %( ee. e*$)(e %

%5e( ee. *"&5e.e&*e!

..+ S3ecifying Material %ro3erties

Semiconductor* $nsulator* or #onductor

A'' $e.%$'( $.e 2%5%2e2 %&" +.ee *'$((e(B (e%*"&2)*".(, %&()'$".( $&2 *"&2)*".(! E$*+

*'$(( .e)%.e( $ 2%(%&* (e "# p$.$ee.( " e 2e#%&e2! F". (e%*"&2)*".(, +e(e p."pe.%e(

%&*')2e $&2 $p, e'e*."& $##%&%, ($).$%"& 5e'"*%%e( $&2 2e&(% "# ($e(! T+e.e $.e +e

e&e.$' p$.$ee.( )(e2 %& (%)'$%"&( "# 2e5%*e( #". $& $e.%$'(!


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Setting %arameters

T+e MATERIAL ($ee& pe.%( " (pe*%# )(e. 2e#%&e2 5$')e( #". +e(e e&e.$'

p$.$ee.(! F". e$p'e, +e ($ee&B

MATERIAL MATERIALS%'%*"& EG300! MUN00

T+e $"5e ($ee& %5e( +e $&2 $p 5$')e "# ! e> $&2 '"1 #%e'2 e'e*."& "%'% "#

00 *5-( %& $'' (%'%*"& .e%"&( %& +e 2e5%*e! I# +e $e.%$' p."pe.%e( $.e 2e#%&e2

.e%"&, +e .e%"& %( (pe*%#%e2 )(%& +e REGION ". NAME p$.$ee.( %& +e MATERIAL

($ee&! F". e$p'e, +e ($ee&B

MATERIAL REGION TAUN0e-7 TAUP0e-

T+e $"5e ($ee& %5e( +e e'e*."& $&2 +"'e S+"*/'e-Re$2-H$'' .e*"%&$%"& '%#e%e(

#". .e%"& &)e. 1"! I# +e &$e, $(e, +$( ee& (pe*%#%e2 )(%& +e NAME p$.$ee. %&

+e REGION ($ee&, +e& +e ($ee&B

MATERIAL NAME$(e NC3003e9

T+e $"5e ($ee& %5e( +e *"&2)*%"& $&2 2e&(% "# ($e( $ 300 K #". +e .e%"&

&$e2 $(e!

2etero>unction Materials

T+e +ee.")&*%"& $e.%$' p."pe.%e( *$& $'(" e *)("%e2 1%+ +e MATERIAL

($ee&! I& $22%%"& " +e )()$' $e.%$' p$.$ee.(, *"p"(%%"& 2epe&2e& $e.%$'

p$.$ee.( *$& e (pe*%#%e2! T+e(e %&*')2e *"p"(%%"& 2epe&2e& $&2 p$.$ee.(,

2%e'e*.%* *"&($&(, ($).$%"& 5e'"*%%e(, $&2 (" "&!

F". +ee.")&*%"& $e.%$' ((e(, +e $&2$p 2%##e.e&*e e1ee& +e $e.%$'( %( 2%5%2e2 e1ee& *"&2)*%"& $&2 5$'e&*e $&2(! T+e ALIGN p$.$ee. (pe*%#%e( +e #.$*%"& "# +%(

2%##e.e&*e +$ %( $pp'%e2 " +e *"&2)*%"& $&2 e2e! T+%( 2ee.%&e( +e e'e*."& $&2 +"'e

$..%e. +e%+ $&2 "5e..%2e( $& e'e*."& $##%&% (pe*%#%*$%"&! F". e$p'e, +e ($ee&B

MATERIAL MATERIALI&G$A( ALIGN0!3

MATERIAL MATERIALI&P ALIGN0!3

T+e $"5e ($ee& (pe*%#%e( +$ 3 "# +e $&2 $p 2%##e.e&*e e1ee& I&G$A( $&2 I&P


54/58

%( %5e& " +e *"&2)*%"& $&2 $&2 6 %( %5e& " +e 5$'e&*e $&2! F". e$p'e, %# +e


55/58

$&2 $p 2%##e.e&*e < E= #". +%( $e.%$' ((e %( 0!6 e>, +e& +e *"&2)*%"& $&2 $..%e.

+e%+ %( 0!0 e> $&2 +e 5$'e&*e $&2 $..%e. +e%+ %( 0!390 e>!

Specifying Interface Properties

T+e ($ee& #". INTERFACE %( )(e2 " (pe*%# +e %&e.#$*e *+$.e 2e&(% $&2 ().#$*e

.e*"%&$%"& 5e'"*% $ %&e.#$*e( e1ee& (e%*"&2)*".( $&2 %&()'$".(! F". e$p'e, +e

($ee&B

INTERFACE \F3e0

G%5e +$ $'' %&e.#$*e( e1ee& (e%*"&2)*".( $&2 %&()'$".( +$5e $ #%e2 *+$.e "#

300

*-

! I& $& *$(e(, +e %&e.e(e2 %&e.#$*e %( '%%e2 " $ (pe*%#%* .e%"&! T+%( *$& e

2"&e 1%+ +e @!MIN, @!MA@, Y!MIN, $&2 Y!MA@ p$.$ee.( "& +e INTERFACE

($ee&! T+e(e p$.$ee.( (pe*%# $ .e*$&'e, 1+e.e +e %&e.#$*e p."pe.%e( e 5$'%2! F".

e$p'e, +e ($ee&B

INTERFACE \F3e0 @!MIN!0 @!MA@ Y!MIN0!0 Y!MA@0!

'%%( +e %&e.#$*e *+$.e " +e (e%*"&2)*".-%&()'$". ")&2$. 1%+%& +e (pe*%#%e2

.e*$&'e! I& $22%%"& " #%e2 *+$.e, ().#$*e .e*"%&$%"& 5e'"*% $&2 +e.%"&%*

e%((%"& $.e e&$'e2 $&2 2e#%&e2 1%+ +e INTERFACE ($ee&!


56/58

Chapter 4

4 DEVICE STRUCTURE & SIMULATION

8. "e De4ice Structure

F%).e( 4! $&2 4! (+"1 +e *."(( (e*%"&$' 5%e1 "# +e TMDG MOSFET( 1%+ 2.$%&

(%2e %($'%&e&


57/58

Figure 8..& A sc"ematic 4ie1 of t"e MDG MOSFE structure 1it" drain side misalignment 5engt" of

control gate* first screen gate and second screen gate are ta'en as L*

Land

L3 res3ecti4ely. t si and

t o x

are silicon c"annel t"ic'ness and gate o


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bet1een front and bac' gate at t"e drain end.

Documents

Cu-doped Zno (in progress)