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VGS - Gate-to-Source Voltage (V)
RD
S(o
n) -
On-
Sta
te R
esis
tanc
e (m:
)
0 2 4 6 8 10 12 14 16 18 200
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D007
TC = 25°C, I D = 28 ATC = 125°C, I D = 28 A
Qg - Gate Charge (nC)
VG
S -
Gat
e-to
-Sou
rce
Vol
tage
(V
)
0 5 10 15 20 25 30 35 40 450
1
2
3
4
5
6
7
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9
10
D004
ID = 28 AVDS = 30 V
1 D
2 D
3 D
4
D
D5G
6S
7S
8S
P0093-01
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Folder
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Now
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18540Q5BSLPS488B –JUNE 2014–REVISED APRIL 2017
CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs
1
1 Features1• Ultra-Low Qg and Qgd
• Low-Thermal Resistance• Avalanche Rated• Lead-Free Terminal Plating• RoHS Compliant• Halogen Free• SON 5-mm × 6-mm Plastic Package
2 Applications• DC-DC Conversion• Secondary Side Synchronous Rectifier• Isolated Converter Primary Side Switch• Motor Control
3 DescriptionThis 1.8-mΩ, 60-V NexFET™ power MOSFET isdesigned to minimize losses in power conversionapplications with a SON 5-mm × 6-mm package.
Top View
Product SummaryTA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 41 nC
Qgd Gate Charge Gate-to-Drain 6.7 nC
RDS(on) Drain-to-Source On ResistanceVGS = 4.5 V 2.6
mΩVGS = 10 V 1.8
VGS(th) Threshold Voltage 1.9 V
Device Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD18540Q5B 2500 13-Inch Reel SON5.00-mm × 6.00-mm
Plastic Package
TapeandReelCSD18540Q5BT 250 7-Inch Reel
(1) For all available packages, see the orderable addendum atthe end of the data sheet.
Absolute Maximum RatingsTA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID
Continuous Drain Current (Package Limited) 100
AContinuous Drain Current (Silicon Limited),TC = 25°C 205
Continuous Drain Current(1) 29
IDM Pulsed Drain Current, TA = 25°C(2) 400 A
PDPower Dissipation(1) 3.8
WPower Dissipation, TC = 25°C 188
TJ,Tstg
Operating Junction,Storage Temperature –55 to 175 °C
EASAvalanche Energy, Single PulseID = 80 A, L = 0.1 mH, RG = 25 Ω 320 mJ
(1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-inthick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤1%.
RDS(on) vs VGS Gate Charge
2
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Table of Contents1 Features .................................................................. 12 Applications ........................................................... 13 Description ............................................................. 14 Revision History..................................................... 25 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 35.2 Thermal Information .................................................. 35.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 76.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 76.3 Trademarks ............................................................... 76.4 Electrostatic Discharge Caution................................ 76.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and OrderableInformation ............................................................. 87.1 Q5B Package Dimensions ........................................ 87.2 Recommended PCB Pattern..................................... 97.3 Recommended Stencil Pattern ................................. 97.4 Q5B Tape and Reel Information ............................. 10
4 Revision History
Changes from Revision A (June 2016) to Revision B Page
• Corrected package size typo in the Description section......................................................................................................... 1
Changes from Original (June 2014) to Revision A Page
• Updated ID values. ................................................................................................................................................................. 1• Updated PD values. ............................................................................................................................................................... 1• Increased maximum temperature to 175°C. .......................................................................................................................... 1• Updated Figure 2.................................................................................................................................................................... 5• Changed Figure 6 to extend temperature to 175°C. .............................................................................................................. 5• Changed Figure 8 to extend temperature to 175°C. .............................................................................................................. 6• Replotted Figure 10 using 175°C data. .................................................................................................................................. 6• Changed Figure 12 to extend temperature to 175°C. ........................................................................................................... 6• Added Receiving Notification of Documentation Updates and Community Resources to Device and Documentation
Support section. ..................................................................................................................................................................... 7• Updated the mechanical drawing. .......................................................................................................................................... 8
3
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5 Specifications
5.1 Electrical CharacteristicsTA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITSTATIC CHARACTERISTICSBVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 VIDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μAIGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nAVGS(th) Gate-to-source threshold voltage VDS = VGS, I = 250 μA 1.5 1.9 2.3 V
RDS(on) Drain-to-source on resistanceVGS = 4.5 V, ID = 28 A 2.6 3.3
mΩVGS = 10 V, ID = 28 A 1.8 2.2
gfs Transconductance VDS = 6 V, ID = 28 A 116 SDYNAMIC CHARACTERISTICSCiss Input capacitance
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz3250 4230 pF
Coss Output capacitance 622 808 pFCrss Reverse transfer capacitance 15 20 pFRG Series gate resistance 0.8 1.6 ΩQg Gate charge total (4.5 V)
VDS = 30 V, IDD = 28 A
20 26 nCQg Gate charge total (10 V) 41 53 nCQgd Gate charge gate-to-drain 6.7 nCQgs Gate charge gate-to-source 8.8 nCQg(th) Gate charge at Vth 6.3 nCQoss Output charge VDS = 30 V, VGS = 0 V 83 nCtd(on) Turnon delay time
VDS = 30 V, VGS = 10 V,IDS = 28 A, RG = 0 Ω
6 nstr Rise time 9 nstd(off) Turnoff delay time 20 nstf Fall time 3 nsDIODE CHARACTERISTICSVSD Diode forward voltage ISD = 28 A, VGS = 0 V 0.8 1 VQrr Reverse recovery charge VDS= 30 V, IF = 28 A,
di/dt = 300 A/μs145 nC
trr Reverse recovery time 82 ns
(1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s boarddesign.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
5.2 Thermal InformationTA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNITRθJC Junction-to-case thermal resistance (1) 0.8
°C/WRθJA Junction-to-ambient thermal resistance (1) (2) 50
GATE Source
DRAIN
N-Chan 5x6 QFN TTA MAX Rev3
M0137-01
GATE Source
DRAIN
N-Chan 5x6 QFN TTA MIN Rev3
M0137-02
4
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Max RθJA = 50°C/Wwhen mounted on 1 in2
(6.45 cm2) of2-oz (0.071-mm) thickCu.
Max RθJA = 125°C/Wwhen mounted on aminimum pad area of2-oz (0.071-mm) thickCu.
5.3 Typical MOSFET CharacteristicsTA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
TC - Case Temperature (°C)
VG
S(t
h) -
Thr
esho
ld V
olta
ge (
V)
-75 -50 -25 0 25 50 75 100 125 150 175 2000.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
D006 VGS - Gate-to-Source Voltage (V)
RD
S(o
n) -
On-
Sta
te R
esis
tanc
e (m:
)
0 2 4 6 8 10 12 14 16 18 200
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D007
TC = 25°C, I D = 28 ATC = 125°C, I D = 28 A
Qg - Gate Charge (nC)
VG
S -
Gat
e-to
-Sou
rce
Vol
tage
(V
)
0 5 10 15 20 25 30 35 40 450
1
2
3
4
5
6
7
8
9
10
D004 VDS - Drain-to-Source Voltage (V)
C -
Cap
acita
nce
(pF
)
0 10 20 30 40 50 601
10
100
1000
10000
100000
D005
Ciss = Cgd + CgsCoss = Cds + CgdCrss = Cgd
VDS - Drain-to-Source Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10
20
40
60
80
100
120
140
160
180
200
D002
VGS = 4.5 VVGS = 6.0 VVGS = 10 V
VGS - Gate-to-Source Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
1 1.5 2 2.5 3 3.5 4 4.5 50
20
40
60
80
100
120
140
160
180
200
D003
TC = 125°CTC = 25°CTC = -55°C
5
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Typical MOSFET Characteristics (continued)TA = 25°C (unless otherwise stated)
Figure 2. Saturation Characteristics
VDS = 5 V
Figure 3. Transfer Characteristics
ID = 28 A VDS = 30 V
Figure 4. Gate Charge Figure 5. Capacitance
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage
TC - Case Temperature (°C)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
-50 -25 0 25 50 75 100 125 150 175 2000
20
40
60
80
100
120
D012
VDS - Drain-to-Source Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
0.1 1 10 1000.1
1
10
100
1000
5000
D010
100 ms10 ms
1 ms100 µs
10 µs
TAV - Time in Avalanche (ms)
I AV -
Pea
k A
vala
nche
Cur
rent
(A
)
0.01 0.1 110
100
D011
TC = 25q CTC = 125q C
TC - Case Temperature (°C)
Nor
mal
ized
On-
Sta
te R
esis
tanc
e
-75 -50 -25 0 25 50 75 100 125 150 175 2000.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
D008
VGS = 4.5 VVGS = 10 V
VSD - Source-to-Drain Voltage (V)
I SD -
Sou
rce-
to-D
rain
Cur
rent
(A
)
0 0.2 0.4 0.6 0.8 10.0001
0.001
0.01
0.1
1
10
100
D009
TC = 25°CTC = 125°C
6
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Typical MOSFET Characteristics (continued)TA = 25°C (unless otherwise stated)
ID = 28 A
Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage
Single Pulse, Max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
7
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6 Device and Documentation Support
6.1 Receiving Notification of Documentation UpdatesTo receive notification of documentation updates, navigate to the device product folder on ti.com. In the upperright corner, click on Alert me to register and receive a weekly digest of any product information that haschanged. For change details, review the revision history included in any revised document.
6.2 Community ResourcesThe following links connect to TI community resources. Linked contents are provided "AS IS" by the respectivecontributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaborationamong engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and helpsolve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.
6.3 TrademarksNexFET, E2E are trademarks of Texas Instruments.All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
6.5 GlossarySLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
D1
Top View
E
c1
E1
41
23
Side View Bottom View
Front View
14
b (
8x)
32
e
L
K
H
D2
85
67
85
67
D3
d1
d2
8
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7 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Q5B Package Dimensions
DIMMILLIMETERS
MIN NOM MAXA 0.80 1.00 1.05b 0.36 0.41 0.46c 0.15 0.20 0.25
c1 0.15 0.20 0.25c2 0.20 0.25 0.30D1 4.90 5.00 5.10D2 4.12 4.22 4.32D3 3.90 4.00 4.10d 0.20 0.25 0.30d1 0.085 TYPd2 0.319 0.369 0.419E 4.90 5.00 5.10E1 5.90 6.00 6.10E2 3.48 3.58 3.68e 1.27 TYPH 0.36 0.46 0.56L 0.46 0.56 0.66L1 0.57 0.67 0.77θ 0° — —K 1.40 TYP
4.318(0.170)
2.186
6.586
0.350
(0.014)
1.294
x 8
(0.051)
0.746 x 8
(0.029)
(0.259)
1.072
(0.042)
1.270
0.562 x 4
(0.022)
0.300(0.012)
(0.086)
(0.050)
1.525(0.060)
0.508
x4
(0.020)
1.270 (0.050)
0.286(0.011)
0.766
(0.030)
9
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7.2 Recommended PCB Pattern
For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques(SLPA005).
7.3 Recommended Stencil Pattern
Ø 1.50+0.10–0.00
4.00 ±0.10 (See Note 1)
1.7
5 ±
0.1
0
R 0.30 TYP
Ø 1.50 MIN
A0
K0
0.30 ±0.05
R 0.30 MAX
A0 = 6.50 ±0.10B0 = 5.30 ±0.10K0 = 1.40 ±0.10
M0138-01
2.00 ±0.05
8.00 ±0.10
B0
12.0
0 ±
0.3
0
5.5
0 ±
0.0
5
10
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7.4 Q5B Tape and Reel Information
Notes:1. 10-sprocket hole-pitch cumulative tolerance ±0.2.2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm.3. Material: black static-dissipative polystyrene.4. All dimensions are in mm (unless otherwise specified).5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket.
PACKAGE OPTION ADDENDUM
www.ti.com 19-Apr-2017
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead/Ball Finish(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
CSD18540Q5B ACTIVE VSON-CLIP DNK 8 2500 Pb-Free (RoHSExempt)
CU NIPDAU | CU SN Level-1-260C-UNLIM -55 to 150 CSD18540
CSD18540Q5BT ACTIVE VSON-CLIP DNK 8 250 Pb-Free (RoHSExempt)
CU NIPDAU | CU SN Level-1-260C-UNLIM -55 to 150 CSD18540
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 19-Apr-2017
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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