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Crystallume · ance of silicon on diamond structures may be greater than 1 X 108 rad Si02. Threshold voltage shifts did not differ from the flatband voltage shift to within the experimental

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Page 1: Crystallume · ance of silicon on diamond structures may be greater than 1 X 108 rad Si02. Threshold voltage shifts did not differ from the flatband voltage shift to within the experimental
Page 2: Crystallume · ance of silicon on diamond structures may be greater than 1 X 108 rad Si02. Threshold voltage shifts did not differ from the flatband voltage shift to within the experimental
Page 3: Crystallume · ance of silicon on diamond structures may be greater than 1 X 108 rad Si02. Threshold voltage shifts did not differ from the flatband voltage shift to within the experimental