CQY80XG

7/29/2019 CQY80XG

http://slidepdf.com/reader/full/cqy80xg 1/3

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

7/12/00 DB90035m-AAS/A1

OPTION G

7.62

0.26

0.5

Dimensions in mm

SURFACE MOUNT

OPTION SM

10.16

7.06.0

1.2

7.62

3.0

13°Max

3.35

4.0

3.0

2.54

0.26

7.626.62

0.5

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll CQY80X is VDE 0884 in 3 availablelead forms : -

- STD

- G form

- SMD approved to CECC 00802

CQY80NX - VDE 0884 pending

ll CQY80X is certified to EN60950 by the

following Test Bodies :-

Nemko - Certificate No. P96101299

Fimko - Registration No. 190469-01..22Semko - Reference No. 9620076 01Demko - Reference No. 305567CQY80NX - EN60950 pending

DESCRIPTION

The CQY80 series of optically coupledisolators consist of infrared light emitting diodeand NPN silicon photo transistor in a standard6 pin dual in line plastic package.

FEATURES

l Options :-10mm lead spread - add G after part no.Surface mount - add SM after part no.Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kVRMS

,7.5kVPK

)l Custom electrical selections available

APPLICATIONS

l DC motor controllersl Industrial systems controllersl Signal transmission between systems of

different potentials and impedances

OPTICALLY COUPLED

ISOLATOR

PHOTOTRANSISTOR OUTPUT

1

3 4

6

2 5

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°COperating Temperature -55°C to + 100°CLead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mAReverse Voltage 6VPower Dissipation 105mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO

32VCollector-base Voltage BV

CBO70V

Emitter-collector Voltage BVECO 6VPower Dissipation 160mW

POWER DISSIPATION

Total Power Dissipation 200mW

(derate linearly 2.67mW/°C above 25°C)

CQY80X, CQY80NX

CQY80, CQY80N

10.469.86

0.60.1 1.25

0.75

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USATel: (214) 495-0755 Fax: (214) 495-0901

e-mail [email protected]://www.isocom.com

7/29/2019 CQY80XG


DB90035m-AAS/A1

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.60 V I

F= 50mA

Reverse Voltage (VR ) 6 V I

R = 10µA

Reverse Current (IR ) 10 µA VR = 6V

Output Collector-emitter Breakdown (BVCEO

) 32 V IC

= 1mA( Note 2 )

Emitter-collector Breakdown (BVECO

) 6 V IE

= 100µA

Collector-emitter Dark Current (ICEO

) 200 nA VCE

= 20V

Coupled IC

/ IF

(CTR) (Note 2) 0.5 10mA IF, 5V V

CE

Current Transfer Ratio (CTR) (Note 2) 50 % 10mA IF, 5V V

CE

Collector-emitter Saturation VoltageVCE(SAT)

0.3 V 10mA IF

, 1mA IC

Input to Output Isolation Voltage VISO

5300 VRMS

See note 1

7500 VPK

See note 1

Input-output Isolation Resistance R ISO

5x1010 Ω VIO

= 500V (note 1)

Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory.

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

Type R L = 100Ω see fig 1 R

L= 1k Ω see fig 2

td tr ton ts tf toff IC

ton toff IF

µs µs µs µs µs µs mA µs µs mA

CQY80 4.0 7.0 11.0 0.3 6.7 7.0 5 25.0 42.5 10

VCC

= 5V

Figure 1

50Ω

Output

VCC

= 5V

R L

= 1k Ω

Figure 2

50Ω

Output

R L

= 100Ω

CQY80N

7/29/2019 CQY80XG


DB90035m-AAS/A17/12/00

50

Ambient temperature TA

( °C )

150

0

200


( °C )

C o l l e c t o r p o w e r d i s s i p a t i o n P

C ( m W )

60

30

20

10

0

40

50

-30 0 25 50 75 100 125

Collector Power Dissipation vs. Ambient Temperature

Forward Current vs. Ambient Temperature

-30 0 25 50 75 100

100

0

0.5

1.0

1.5I

F= 10mA

VCE

= 5V

F o r w a r d c u r r e n t I

F ( m A )

0

80

120

160

200

240

40

280

320

Forward current IF

(mA)

Current Transfer Ratio vs. Forward Current

Relative Current Transfer Ratio

vs. Ambient Temperature

R

e l a t i v e c u r r e n t t r a n s f e r r a t i o

C u r r e n t t r a n s f

e r r a t i o C T R ( % )

VCE

= 5VT

A= 25°C

70

80

1 2 5 10 20 50

Collector Current vs. Collector-emitter Voltage

Collector-emitter voltage VCE

( V )

C o l l e c t o r c u r r e n t I

C ( m A

)

0 2 4 6 8 10

0

10

20

30

40

50 TA

= 25°C

10

1520

30

50

-30 0 25 50 75 100 125

-30 0 25 50 75 100


( °C )

C o l l e c t o r

- e m i t t e r s a t u r a t i o n v o l t a g e V

C E ( S A T ) ( V

)Collector-emitter Saturation

Voltage vs. Ambient Temperature

0

0.04

0.08

0.12

0.16

0.20

0.24

0.28

IF

= 10mAI

C= 1mA


( °C )

IF= 5mA

Documents

CQY80XG