CONFIDENTIALCONFIDENTIAL

ACT518 12V1A presentation Report

AE ShangHaiJULY 24,2013

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ACT518 Introduction

PART NUMBER TEMPERATURE

RANGEPACKAG

EPINS

PACKING METHOD

TOP MARK

ACT518SH-T -40°C to 85°C SOP-8 8 TUBE & REEL ACT518SH

PIN NAME DESCRIPTION

1 CSCurrent Sense Pin. Connect an external resistor (RCS)

between this pin and ground to set peak current limit for the primary switch.

2 FBFeedback Pin. Connect this pin to optocouplers’s collector for output regulation.

3 VDETValley Detector Pin. Connect this pin to a resistor divider network from the auxiliary winding to detect zero-crossing points for valley turn on operation.

4 VDDPower Supply. This pin provides bias power for the IC during startup and steady state operation.

5,6 GND Ground.

7,8 DRAIN MOSFET Drain Pin.

8

6

7

5

1

2

3

VDD

DRAIN

DRAIN

4

AC

T518S

H

CS

FB

VDET

GND

GND

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PWM Adaptor IC CCM/QR IC (ACT518)

Integrated Power MosfetHigh Performance PWM IC CCM and QR OperationLess peripheral components Patent QR Technology

VDD

FB GND CS

DRAINVDET

ACT518

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End Application

Adaptors for Small home appliances 

Set-box power

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Board PhotographBoard Photograph

Top

Bottom

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SchematicSchematic

C5330µF16V

T1 EE16

L210uH

D3 SB5100

R101kΩ

R3A/B750kΩ

C31000pF

C210µF400V

CS

U1ACT518SH-T

SOP-8

GND FB

VDDDrain

1

7 4

5

GND

VDET3

R9 1.37Ω

R71MΩ

R81MΩ

D4RS1M

D2RS1M

R422Ω

C7100pF

50V

C46.8µF

50VR611kΩ

R560.4kΩ

VO

R4 100Ω

U3TL431A

C91000pF/50V

R13 22Ω

C6330µF16V

LN

BD1 1A600V

R113.3kΩ

2

L1 1.5mH

FR11A250Vac

U2B

U2A

R1424.3kΩ

R156.19kΩ

R123kΩ

C80.1µF50V

CY11000pF400Vac

C110µF400V

R17 2.2K

R1 47Ω8

6

GND

Drain

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BOMItem Reference Description QTY Manufacturer

1 U1 IC, ACT518,SOP-8 1 Active-Semi.

2 C1,C2 Capacitor, Electrolytic, 10uF/400V, 10x16mm 2 KSC

3 C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD 1 POE

4 C4 Capacitor, Electrolytic,6.8uF/50V,5x11mm 1 KSC

5 C5 Capacitor, Solid, 330uF/16V, 8x12mm 2 KSC

6 C6 Capacitor, Solid, 330uF/16V, 8x12mm 2 KSC

7 C7 Capacitor, Ceramic, 100pF/50V, 0805,SMD 1 POE

8 C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD 1 POE

9 C9 Capacitor, Ceramic, 1000pF/50V, 0805,SMD 1 POE

10 CY1 Safety Y1,Capacitor,1000pF/400V,Dip 1 UXT

11 BD1 Diode,Rectifier,1000V/1A,MB6S, SOT-4 1 Good-Ark

12 D2,4 Fast Recovery Rectifier, RS1M,1000V/1.0A, SMA 2 PANJIT

13 D3 Diode, schottky, SB5100, 5A/100V, DO-41 1 Diodes

14 L1 DM Inductor, 1.5mH, R10K,Dip 1 SoKa

15 L2 DM Inductor, 10uH, R8K,Dip 1 SoKa

16 PCB1 PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A 1 Jintong

17 FR1 Fuse,1A/250V 1 TY-OHM

18 R1 Chip Resistor, 47 ohm, 0805, 5% 1 TY-OHM

19 R3A/B Carbon Resistor, 750K ohm, 1206, 5% 2 TY-OHM

20 R2 Chip Resistor, 100 ohm, 0805, 5% 1 TY-OHM

21 R4,13 Chip Resistor, 22 ohm, 0805, 5% 2 TY-OHM

22 R5 Chip Resistor, 60.4K ohm, 0805,1% 1 TY-OHM

23 R6 Chip Resistor, 11K ohm, 0805, 1% 1 TY-OHM

24 R7,R8 Chip Resistor, 1M ohm, 0805 , 5% 2 TY-OHM

25 R9 Chip Resistor, 1.37ohm, 1206,1% 1 TY-OHM

26 R10 Chip Resistor, 1k ohm, 0805 , 5% 1 TY-OHM

27 R11,12 Chip Resistor, 3K ohm, 0805, 5% 2 TY-OHM

28 R14 Chip Resistor, 24.3K ohm, 0805, 1% 1 TY-OHM

29 R15 Chip Resistor, 6.19K ohm, 0805, 1% 1 TY-OHM

30 R17 Chip Resistor, 12K ohm, 0805, 5% 1 TY-OHM

31 T1 Transformer, Lp=1.1mH, EE16 1 Not defined

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Transformer structure

Item Description Condition Limits

1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac

2 LP Inductance Inductance between pins 2and 1 at 1Vac & 1kHz 1.1mH±7%

3 LP Leakage InductanceInductance between pins 2 and 1 with pins3-1 and B-A

75µH

Winding

TerminalTurns

Wire Insulation

Start Finish Type Size*QTY Layer Thick/Wide Layer

P1 2 3 38 2UEW 0.18Φ*1 1 0.025*11W 2

S1 6 7 11 TEX-E 0.5Φ*1 1 0.025*11W 2

P2 3 F 38 2UEW 0.18Φ*1 1 0.025*11W 2

S2 7 10 11 TEX-E 0.5Φ*1 1 0.025*11W 2

P3 F 1 38 2UEW 0.18Φ*1 1 0.025*11W 2

P4 5 4 24 2UEW 0.12Φ*2 1 0.025*11W 2

Note: 1. P1,P2,P3and P4 are primary and S1,S2 is secondary. 2. Reverse the direction of bobbin when do the S1,S2,P4

S1

P4

1

3P1

2

4

5

P3

B-6

A-10

SH3

P2F 7

S2

P12

3F

P3F

P2

1P45

4

3

7 S2

S1 7B-6

A-10

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Standby Power

VIN(AC) 90 115 230 264Green Mode Limit (mW)

Pass/Fail

Po =0W 32 40 86 109 150 　

Standby Power Vs Input Voltage

0

20

4060

80

100

120

90 115 230 264

Input Voltage (VAC)

Sta

nd

y P

ow

er (

W)

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EfficiencyPCB bottom:

VIN (VAC) 25% Po 50% Po 75% Po 100% PoAverage Eff(%)

ES 2.0 (%) Pass/Failw 3 6 9 12

115 85.68% 85.73% 85.87% 85.19% 85.62% 77.76% 　

230 83.15% 84.48% 85.23% 85.86% 84.68% 77.76% 　

Efficiency Vs Po

40.00%

50.00%

60.00%

70.00%

80.00%

90.00%

25% Po 50% Po 75% Po 100% Po

Output Power

Eff

icie

nc

y

115V

230V

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Line and RegulationVIN (VAC) 0% Po 25% Po 50% Po 75% Po 100% Po

Voltage Limit (V)

Pass/Fail

　 0 250 500 750 1000 　 　

　 0.00 3.00 6.00 9.00 12.00 11.4V~12.6V 　

90 12.228 12.207 12.186 12.163 12.136 11.4V~12.6V 　

115 12.227 12.207 12.186 12.163 12.136 11.4V~12.6V 　

230 12.227 12.207 12.185 12.161 12.126 11.4V~12.6V 　

264 12.227 12.206 12.185 12.160 12.118 11.4V~12.6V 　

CV Regulation

0.000

2.000

4.000

6.0008.000

10.000

12.000

0% Po 25% Po 50% Po 75% Po 100% Po

Output Power

Vo

(V)

90V 115V 230V 264V

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Ripple and Noise90VAC load:0mA

264VAC load:0mA

90VAC load:1000mA

264VAC load:1000mA

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Short power &OLPShort power:

OLP:

Protection 90 VAC 115VAC 230VAC 264 VAC Pass/Fail

Pin (W) 0.056 0.08 0.1 0.16 　

line 90 VAC 115VAC 230VAC 264 VAC Pass/Fail

OCP 1.28A 1.29A 1.18A 1.16A 　

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Dynamic ResponseDynamic load(30ms,127.5mA/uS):

Condition(Load%) Undershoot(V) Overshoot(V) Pass/Fail

115VAC, 0%-100% 1040mV 180mV 　

115VAC, 50% -100% 65mV 40mV 　

230VAC, 0%-100% 970mV 172mV 　

230VAC, 50% -100% 67mV 32mV 　

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V drain VoltageMOS Vds@264VAC input, FULL LOAD

Diode Schottky@264VAC input, FULL LOAD

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Temp test

Location Time Temp

IC 24h 74.1℃

Transformer 24h 68.0℃

Out diode 24h 75.6℃

50 closed:℃

25 closed:℃

Location Time Temp

IC 24h 99.6℃

Transformer 24h 93.8℃

Out diode 24h 95.5℃

L ： 55mm

W ：28mm

H ： 16mm

With no any heatsink