· compound semiconductor consisting of Ill-V material combinations. The main effect of straining...
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· compound semiconductor consisting of Ill-V material combinations. The main effect of straining silicon is to modify the conduction and valence band structures (Figure 1). These
![DOI: 10.1002/cphc.201101009 Bismuth Hexagons: Facile Mass ... · (~40 meV) between the conduction and valence bands.[5] So Bi with effective carrier mobility at reduced dimensions](https://img.pdfslide.us/doc/110x75/5e1bf0472417ec049f43f6e3/doi-101002cphc201101009-bismuth-hexagons-facile-mass-40-mev-between.jpg)
