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Combinatorial Approach to Materials Discovery. Ichiro Takeuchi Dept. of Materials Science and Engineering and Center for Superconductivity Research University of Maryland. Cover of Chemistry & Industry, October 1998. Making New Materials. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. - PowerPoint PPT Presentation
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Combinatorial Approach toMaterials Discovery
Ichiro TakeuchiDept. of Materials Science and Engineering and Center for Superconductivity Research
University of Maryland
Cover ofChemistry & Industry,October 1998
1IA
2IIA
3IIIB
4IVB
5VB
6VIB
7VIIB
8VIII
9VIII
10VIII
11IB
12IIB
13IIIA
14IVA
15VA
16VIA
17VIIA
180
H1
He2
Li3
Be4
B5
C6
N7
O8
F9
Ne10
Na11
Mg12
Al13
Si14
P15
S16
Cl17
Ar18
K19
Ca20
Sc21
Ti22
V23
Cr24
Mn25
Fe26
Co27
Ni28
Cu29
Zn30
Ga31
Ge32
As33
Se34
Br35
Kr36
Rb37
Sr38
Y39
Zr40
Nb41
Mo42
Tc43
Ru44
Rh45
Pd46
Ag47
Cd48
In49
Sn50
Sb51
Te52
I53
Xe54
Cs55
Ba56
La57
Hf72
Ta73
W74
Re75
Os76
Ir77
Pt78
Au79
Hg80
Tl81
Pb82
Bi83
Po84
At85
Rn86
Fr87
Ra88
Ac89
Unq104
Unp105
Unh106
Uns107
Uno108
Une109
Uun110
Ce58
Pr59
Nd60
Pm61
Sm62
Eu63
Gd64
Tb65
Dy66
Ho67
Er68
Tm69
Yb70
Lu71
Th90
Pa91
U92
Np93
Pu94
Am95
Cm96
Bk97
Cf98
Es99
Fm100
Md101
No102
Lr103
Making New Materials
Searching for the right combinationof elements
For example, superconductorHgBa2CaCu2O7
Parameters that Affect Properties of Materials
1. Compositions 4. Presence of Defects•identity of components•stoichiometry
2. Dopants 5. Microstructures•identity•concentration
3. Processing Conditions•temperatures•pressures
Rapid characterization and screening of
physical properties
Materials diagnostics
Synthesis of combinatorial libraries and
composition spreads
Focus: Electronic Thin Film Materials
Fabrication of libraries and spreadsCombinatorial PLD systems – metal oxide systemsCombinatorial UHV sputtering system – metallic magnetic alloys
Combinatorial Materials Research at the University of Maryland
Rapid characterization toolsScanning SQUID microscopes – magnetic materialsScanning microwave microscopes – ferroelectric/dielectric materialsScanning X-ray microdiffractometer – smart materials, phase mappingNovel device libraries incorporating MEMS, etc.
Quaternary Masks
A B
C ED
Quaternary Masking
Ba
Quaternary Masking: 1st mask, 1st position
Ca
Quaternary Masking: 1st mask, 2nd position
Sr
Quaternary Masking: 1st mask, 3rd position
Pb
Quaternary Masking: 1st mask, 4th position
BaPb
Sr Ca
Ba
Quaternary Masking: after 1st mask
BaPb
Sr Ca
BaZr
Zr
Zr
Zr
Quaternary Masking: 2nd mask, 1st position
BaPb
Sr Ca
BaTa
Ta
Ta
Ta
Quaternary Masking: 2nd mask, 2nd position
BaPb
Sr Ca
Ba
Nb
Nb Nb
Nb
Quaternary Masking: 2nd mask, 3rd position
BaPb
Sr Ca
BaTi
Ti Ti
Ti
Quaternary Masking: 2nd mask, 4th position
BaZrO3
CaNb2O6
CaTiO3
BaNb2O6
BaTiO3
CaTa2O6
CaZrO3
BaTa2O6PbTa2O6
PbZrO3PbTiO3
PbNb2O6
SrTiO3
SrNb2O6 SrTa2O6
SrZrO3
A B
C ED
# depositions: 4 x n# combinations: 4n
5 masks: 4 x 5 = 20 depo’s45 = 1024 samples
Photograph of a 1” x 1”luminescent material library on Si after 20 quaternary depositions
(Left) Luminescent image of the same library after thermally processed under UV excitation.
Science 279, 1712 (1998)
Discrete Libraries vs Composition Spreads
Discrete libraries
•Discrete (separated) samples
•Various device libraries
•Semiconductor gas sensor libraries (electronic noses)
Composition spreads
•Details of compositional variation
•Mapping of phase diagrams
•BaTiO3-SrTiO3
•Magnetic metallic alloys(Ferromagnetic shape memory alloys)
Combinatorial Pulsed Laser Deposition Flange*
rotatable heater plate
x-y movableshutters/masks
drive chain
modular and compact 8” flange
*US provisional patent filed
Semiconductor Gas SensorsSemiconductive metal oxides change their
resistance in the presence of gases
• Advantages: Inexpensive, fast response to gases, etc…
• Problems: sensitivity, selectivity
• Use combinatorial technique (dopant library)
An electronic nose is an array of many different gas sensors coupled to a multiplexed pattern recognition system
2 mm
2 m
m
Pt(2.5%)
Resistance rangesat room temp.800 – 20M
100%
In2O3
(10%)
Pd (2.8%)
Pd +Pt (2.5%, 2.5%)
SnO2 +
In2O3+Pd+Pt(10%, 2.5%, 2.5%)
ZnO(10%)
In2O3+Pt (10%,2.5)
ZnO+Pd (10%, 2.8%)
ZnO+Pt (10%, 2.5%)
In2O3+Pd (10%, 2.8%)
ZnO+Pd+Pt(10%,2.5%2.5%)
WO3
(50%)
WO3+Pt (50%,2.5)
WO3+Pd (50%,2.8)
WO3+Pd +Pt(50%, 2.5%, 2.5%)
Gas Sensor Library Layout
•Au pattern
•16 different elements
•500Å each
•Deposition T= 500oC
23 mm
Discrete Gas Sensor Library
-0.2
0
0.2
0.4
0.6
0.8
1
1.2
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
200
210
220
230
240
250
260
270
280
290
300
0
1
5
14
Temp
Time (second)
Rel
ativ
e c h
ang e
in r
e si s
t an c
eResponse of different sensor elements to exposure to gases
chloroform
100 ppmin air
formaldehyde benzene
formaldehyde
300 C
Moving shutter
Substrate (LaAlO3) at 800 C
Laser beam
BaTiO3
SrTiO3
Fabrication of in-situ deposited composition spreads
BaTiO3 or SrTiO3 target
ShutterSubstrate
HRTEM Micrograph of a Single Composition
Ba0.3Sr0.7TiO3
L. A. Bendersky,NIST
Scanning x-ray microdiffractometer(Bruker)
minimum beam Spot 50m
x-y-z motorized stage
area detector(2 and )
SrTiO3
BaTiO3
Substrate
50 m spot
Scanning x-ray microdiffraction
2 angles350 550
Y
Z
45.3
45.6
45.9
46.2
46.5
46.8
0.0 0.2 0.4 0.6 0.8 1.0
x in Ba1-xSrxTiO3
2
of (2
00) p
eak
(o )
BaTiO3 SrTiO3
2 angle
Scanning Diffraction Data
Zn0.4Mg0.6O
ZnO
(0001) Al2O3
(200) (cubic)
(0002) of hexagonal
(111) of cubic
(0006) of Al2O3
(200) of (cubic)
4530 35 40
2 Composition
change
2/ scan of Zn0.8Mg0.2O
(0002) of (hexagonal)
ZnO
Zn0.4Mg
0.6O
Sample
Coupling loop
Tip
Coaxial ¼
resonator
x-y-z stage Motion controller
Computer
f0
Q
Network analyzer
Rev. Sci. Inst., C. Gao et al., 69, 3846 (1998)Appl. Phys. Lett., I. Takeuchi et al., 71, 2026 (1997)
Scanning Microwave Microscope
L
For (Ba,Sr)TiO3
spread
Scanning Microwave Microscope
Dielectric const. vs. composition
0
200
400
600
800
1000
0.0 0.2 0.4 0.6 0.8 1.0Die
lect
ric
cons
tant 0.95 GHz
2.85 GHz
4.95 GHz
0
0.1
0.2
0.3
0.0 0.3 0.5 0.8 1.0
Los
s ta
ngen
t
BaTiO3 x in Ba1-xSrxTiO3 SrTiO3
Dielectric constant vs composition: temperature dependence
0
200
400
600
800
1000
0.0 0.2 0.4 0.6 0.8 1.0
Die
lect
ric
cons
tant
room temp.
130 C
0.95 GHz
Temperature (0C)
Die
lect
ric
cons
t.
BaTiO3 SrTiO3x in Ba1-xSrxTiO3
80 13030
700
900
500
Appl. Phys. Lett. 79, 4411 (2001)
Ba0.65Sr0.35TiO3
Frequency dispersion
0
0.02
0.04
0.06
0.08
0.0 0.2 0.4 0.6 0.8 1.0
Nor
mal
ized
die
lect
ric
cons
t. di
sper
sion
Room Temperature
BaTiO3 x in Ba1-xSrxTiO3
1GHz-5GHz)/1GHz
SrTiO3
Phonon soft mode and dielectric dispersion in (Ba,Sr)TiO3 films
• Dielectric dispersion is caused by softening/hardening of the phonon soft mode.
• The soft mode moves to the lower frequency range near Tc and results in increased dispersion.
• Compositions near Tc display
largest dispersion.400
600
800
1000
1200
1400
1600
1800
0.01 0.1 1 10 100
Ba0.3
Sr0.7
TiO3 Thin Film
r'
Freq.(GHz)
55K
135K
155K
195K
235K
T < Tc
Magnetic Metallic Alloys
Permanent magnets, eg. FexNdyBz
Half metals with high spin polarization for spintronics devices
Ferromagnetic shape memory alloys e.g. Ni2MnGa, Cu2MnGa
Scanning SQUID microscope is used to map magnetic properties.
UHV chamber -need to avoid oxygen and water
Magnetron co-sputtering
Natural Composition Spread using UHV non-confocalco-sputtering
Composition Spread of Metallic Alloys
Non-confocal (parallel) co-sputtering for creating natural ternary composition spreads.
x
Combinatorial UHV Co-sputtering (Pbase 1x10-9 Torr)
x
guns
distance between guns & substrate
spread profile
B
A C
A-B-C ternary phase diagram
A
B
C
A-B-C compositionspread
Compositional Mapping
i
Ni
Mn
Ga
From WDSanalysis
Ni
Mn
Ni2Ga3
Ni-Mn-Ga composition spread
Mapping of Ni-Mn-GaTernary Phase Diagram
UHV co-sputtering of 3 targets
The material must Be ferromagneticBe a shape memory alloy
Rapid characterization Scanning SQUIDCantilever librariesScanning x-ray diffract.
Ferromagnetic ShapeMemory Alloys
FerromagneticShapeMemory Alloys
ExampleNi2MnGa exhibits 6% strain in 1 kOe in bulk
Typical required field ~ kOe
1920 1940 1960 1980 20000.001
0.01
0.1
1
10
Mag
neti
c fi
eld
indu
ced
stra
in (
%)
Year of Discovery
Ni
Co-ferrite
Terfenol
FMSMA
History of Discovery: Magnetostrictive Materials
Composition SpreadDeposition
•Three targets: Ni, Mn, Ni2Ga3
•Substrate: Si•Thickness: 2500 Å•Insitu deposition w/physical mask •Lift off & annealed •Deposition or annealing temp 500 oC
Ni
Mn
Ni2Ga3
Scanning SQUID Microscope
Image from a SQUID Scan
y po
sitio
n (m
m)
x position (mm)
B field in nT
40 30 20 10
35
30
25
20
15
10
5
-1100 -680 -260 160 580 1000
15 20 25 30 35 40 45 50
60
50
40
30
20
col
row
-2.50e+007 0.00e+000 2.50e+007
rho1_25_x
100-150 emu/cc
50-70 emu/cc30-40 emu/cc
10-20 emu/cc
0 13 25 38 50 63 75
80
60
40
20
0
col
row
-2.50e+007 0.00e+000 2.50e+007
rho1_25
Scanning SQUID image of a Ni-Ni2Ga3-Mn spread wafer
Mn rich
Ni2Ga3 rich
Ni rich
Combinatorial Search of FMSMA: Mapping of Ferromagnetism
0
1
2
3
4
5
6
7
8
910
GaNi 0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
50 100 150 200 250
M (emu/cc)
Ferromagnetic
Detection of Martensitic Transition Temperature
(Looking for Shape Memory Alloys)
-150 -100 -50 0 50 100 150
-120
-100
-80
-60
-40
-20
0
20
NiTi Cantilever
Capacitance Optical
Temperature (°C)C
anti
leve
r D
ispl
acem
ent (
um)
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Lin
e P
osit
ion
(pix
els)
Comparison of optical and capacitance data for cantilever deflection with temperature.
Si
filmMonitor bendingand unbending
Side view of a cantilever
Composition Spread on Cantilevers
Three targets: Ni, Mn, Ni2Ga3
Micro machined cantilevers Alloy film thickness: 1m
Detection of structural phase transition by visual inspection
Measurement setup: Cantilever libraries
Vacuum line
LightsPt temperaturesensor
Colored lines on reverse side for reflection off of cantilevers
Defrosting line
Heating line
Cooling line
Compositions displaying Martensitic transition
Detection of Martensitic transition by visual inspection
“Movie” tracks the temperature change from room temp. to 200 C.
Each cantilever acts as a concave mirror with changing concavity.
Individualcantilever
Color lines are reflection of an image.
-50 0 50 100 150 200
Austenite Start Temp (0C)
0
1
2
3
4
5
6
7
8
9
10
GaNi0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
Combinatorial Search of FMSMA: Composition Mapping of Martensites
I. Takeuchi, UMDONR MURI
SMA
0
1
2
3
4
5
6
7
8
9
10
GaNi 0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
-50 0 50 100 150 200
Temp (0C)
Mapping of SMA and Magnetic Regions
FerromagneticSMA
0
1
2
3
4
5
6
7
8
9
10
GaNi 0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
-50 0 50 100 150 200
Temp (0C)
Mapping of SMA and Magnetic Regions
microdiffraction along this line
Tracking the transition with micro-XRD as a function of composition
composition
inte
nsity
240
50
(220)A
(101)M(110)M
Ni39Mn51Ga10
Ni31Mn62Ga7
microdiffraction across the line on the spread
room temperature
0
1
2
3
4
5
6
7
8
9
10
GaNi 0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
Martensites
Ferromagneticregions
Ni2Ga3
FerromagneticShapeMemory Alloys
Mapping of SMA and Magnetic Regions:summary
0
1
2
3
4
5
6
7
8
910
GaNi 0 1 2 3 4 5 6 7 8 9 10
0
1
2
3
4
5
6
7
8
9
10
Mn
Martensites
Ferromagneticregions
Ni2Ga3
Compositional regions that display martensites
Regions with average electron concentration 7.3-7.8
0 50 100 150 200 250 300 3500
100
200
300
400
500
600M
arte
nsit
e st
art
tem
pera
ture
(K
)
Magnetization (emu/cm3) at room temp
Saturation magnetization vs Martensite start temperature for various compositions on Ni-Mn-Ga spreads
University of MarylandK.-S. Chang R. D. VisputeM. Aronova S. E. LoflandO. Famodu F. C. WellstoodJ. C. Read M. WuttigW. Yang
ONR N000140010503, N000140110761NSF DMR0094265, DMR0076456
Support
Collaborators
The Second US-JAPAN Workshop on Combinatorial Materials Science
and Technology Winter Park, Colorado, Dec 9-11, 2002www.nrel.gov/usjapancombi2002