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Coalescence kinetics of bare and hydrogen-coated silicon nanoparticles: A molecular dynamics study T. Hawa and M. R. Zachariah* Departments of Mechanical Engineering and Chemistry, University of Maryland, College Park, Maryland 20742, USA and the National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA sReceived 18 May 2004; published 27 April 2005d One of the significant challenges in the use of nanoparticles is the control of primary particle size and extent of agglomeration when grown from the gas phase. In this paper we consider the role of surface passivation of the rate of nanoparticle coalescence. We have studied the coalescence of bare and H-coated silicon nanopar- ticles of sizes between 2–6 nm using molecular dynamics simulation at 1000 and 1500 K. We found that coalescence of coated particles consists of two steps, where reaction between particles and relocations of surface atoms near the reacting region, occur in the first step, which comprise an induction period. The second step consists of the nominal coalescence event, which depends on the surface tension and solid-state diffusion in the particle. The hydrogen passivation layer was found to remain on the surface of coalescing pair of the particles during the entire coalescence event. We also develop a mathematical model to describe the dynamics of coalescence of coated particles. The model is able to describe both the initial induction period and the coalescence period, and the role of the extent of surface coverage on the coalescence rate. In general, the entire coalescence time of coated particles is about 3–5 times that of bare particles, and the exothermicity from coalescence is about half that for the unpassivated particles. DOI: 10.1103/PhysRevB.71.165434 PACS numberssd: 61.46.1w, 61.20.Ja I. INTRODUCTION Nanoparticles and nanocrystals are considered one of the fundamental building blocks for the creation of nanostruc- tures and associated devices. In particular, for optoelectronic application quantum confinement effects and the role of sur- face states for particles smaller than 10 nm are of particular interest. 1–4 Fabrication of the desired size with a narrow size distribution, and desired structure, are seen as one of the major challenges in robust implementation of nanoscience to a nanotechnology. The growth of silicon nanoparticles is usually achieved by gas-phase processes through either thermal decomposition of chemical precursors or some type of physical evaporation and/or condensation process. For example, laser ablation of Si targets in an inert gas have been used successfully to fabricate sub-10 nm Si nanoparticles, 5,6 and are shown to exhibit visible photoluminescence sPLd in the red. However, stable and intense PL in the green-blue region has not been achieved for pure Si nanoparticles because of the nature of surface states arising from dangling bonds. 7–9 Patrone et al., for example, found that PL can be stabilized for deposited Si nanoparticles prepared in a hydrogen-containing atmosphere, 6 and hydrogenated Si nanoparticles with green PL in the gas phase can be fabricated in a H 2 + Ne back- ground gas. 10 Makimura et al. 10 reported that hydrogen ter- mination of Si nanoparticles surfaces might arrest the growth of particles and/or change the structure. Such Si nanopar- ticles were shown to have a larger band gap and hence re- quire higher photon energy to realize photoexcitation for PL. 11 Controlling particle size is also a major challenge in the formation of nanoparticles. Liquid-phase growth methods have received some success in this regard through the use of colloidal and solvation forces, to retard or control cluster- cluster interactions, and therefore the growth of nano- particles. 1,12 In contrast gas-phase growth, which is a consid- erably more important industrial process at the moment, has no easy solution to significantly retard particle coagulation and/or coalescence. One possibility has been to charge par- ticles, although this process is difficult to achieve on a large scale, particularly for small particles where charging rates are very small. A more formal representation of the problem is that the rate of collision and subsequent coalescence of particles de- termines the size of the spherical primary particles and the growth of agglomerates. When the characteristic coalescence time is less than the collision time between particles sat suf- ficiently higher temperaturesd, spherical particles will be pro- duced before another collision event occurs. On the other hand, when the collision time is less than the characteristic coalescence time sat relatively low temperaturesd, coales- cence will be negligibly slow and chain aggregates will be formed, t coalescence , t collision spherical particle, t coalescence . t collision agglomerate. Therefore, particle morphology and size can be controlled by either modifying the characteristic coalescence time or the collision time. We have investigated various experimental and theoretical strategies to accomplish this. By embedding a nanoparticle in a nanodroplet of molten salt, generated from gas-phase precursors injected into a high-temperature flame, we observed a retardation of growth. 13 This process was sub- sequently modeled by Efendiev and Zachariah 14,15 using a Monte Carlo method for the simulation that combines both the coagulation of the droplets and the interaction between the embedded nanoparticles. Another approach was to con- PHYSICAL REVIEW B 71, 165434 s2005d 1098-0121/2005/71s16d/165434s12d/$23.00 ©2005 The American Physical Society 165434-1

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Coalescence kinetics of bare and hydrogen-coated silicon nanoparticles:A molecular dynamics study

T. Hawa and M. R. Zachariah*Departments of Mechanical Engineering and Chemistry, University of Maryland, College Park, Maryland 20742, USA

and the National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USAsReceived 18 May 2004; published 27 April 2005d

One of the significant challenges in the use of nanoparticles is the control of primary particle size and extentof agglomeration when grown from the gas phase. In this paper we consider the role of surface passivation ofthe rate of nanoparticle coalescence. We have studied the coalescence of bare and H-coated silicon nanopar-ticles of sizes between 2–6 nm using molecular dynamics simulation at 1000 and 1500 K. We found thatcoalescence of coated particles consists of two steps, where reaction between particles and relocations ofsurface atoms near the reacting region, occur in the first step, which comprise an induction period. The secondstep consists of the nominal coalescence event, which depends on the surface tension and solid-state diffusionin the particle. The hydrogen passivation layer was found to remain on the surface of coalescing pair of theparticles during the entire coalescence event. We also develop a mathematical model to describe the dynamicsof coalescence of coated particles. The model is able to describe both the initial induction period and thecoalescence period, and the role of the extent of surface coverage on the coalescence rate. In general, the entirecoalescence time of coated particles is about 3–5 times that of bare particles, and the exothermicity fromcoalescence is about half that for the unpassivated particles.

DOI: 10.1103/PhysRevB.71.165434 PACS numberssd: 61.46.1w, 61.20.Ja

I. INTRODUCTION

Nanoparticles and nanocrystals are considered one of thefundamental building blocks for the creation of nanostruc-tures and associated devices. In particular, for optoelectronicapplication quantum confinement effects and the role of sur-face states for particles smaller than 10 nm are of particularinterest.1–4 Fabrication of the desired size with a narrow sizedistribution, and desired structure, are seen as one of themajor challenges in robust implementation of nanoscience toa nanotechnology.

The growth of silicon nanoparticles is usually achieved bygas-phase processes through either thermal decomposition ofchemical precursors or some type of physical evaporationand/or condensation process. For example, laser ablation ofSi targets in an inert gas have been used successfully tofabricate sub-10 nm Si nanoparticles,5,6 and are shown toexhibit visible photoluminescencesPLd in the red. However,stable and intense PL in the green-blue region has not beenachieved for pure Si nanoparticles because of the nature ofsurface states arising from dangling bonds.7–9 Patroneet al.,for example, found that PL can be stabilized for depositedSi nanoparticles prepared in a hydrogen-containingatmosphere,6 and hydrogenated Si nanoparticles with greenPL in the gas phase can be fabricated in a H2+Ne back-ground gas.10 Makimuraet al.10 reported that hydrogen ter-mination of Si nanoparticles surfaces might arrest the growthof particles and/or change the structure. Such Si nanopar-ticles were shown to have a larger band gap and hence re-quire higher photon energy to realize photoexcitation forPL.11

Controlling particle size is also a major challenge in theformation of nanoparticles. Liquid-phase growth methodshave received some success in this regard through the use ofcolloidal and solvation forces, to retard or control cluster-

cluster interactions, and therefore the growth of nano-particles.1,12 In contrast gas-phase growth, which is a consid-erably more important industrial process at the moment, hasno easy solution to significantly retard particle coagulationand/or coalescence. One possibility has been to charge par-ticles, although this process is difficult to achieve on a largescale, particularly for small particles where charging ratesare very small.

A more formal representation of the problem is that therate of collision and subsequent coalescence of particles de-termines the size of the spherical primary particles and thegrowth of agglomerates. When the characteristic coalescencetime is less than the collision time between particlessat suf-ficiently higher temperaturesd, spherical particles will be pro-duced before another collision event occurs. On the otherhand, when the collision time is less than the characteristiccoalescence timesat relatively low temperaturesd, coales-cence will be negligibly slow and chain aggregates will beformed,

tcoalescence, tcollision→ spherical particle,

tcoalescence. tcollision→ agglomerate.

Therefore, particle morphology and size can be controlled byeither modifying the characteristic coalescence time or thecollision time. We have investigated various experimentaland theoretical strategies to accomplish this. By embedding ananoparticle in a nanodroplet of molten salt, generated fromgas-phase precursors injected into a high-temperature flame,we observed a retardation of growth.13 This process was sub-sequently modeled by Efendiev and Zachariah14,15 using aMonte Carlo method for the simulation that combines boththe coagulation of the droplets and the interaction betweenthe embedded nanoparticles. Another approach was to con-

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trol the coalescence rate by using the inherent exothermicityof particle coalescence to internally heat the particle andtherefore control the growth rate.16 However, many gasphase processes are not amenable to such approaches.

An altogether different approach is to imagine a particlecoated with a material that would prevent or retard particleagglomeration or coalescence. More specifically, for the caseof silicon, is a natural passivating agent that has been usedpreviously, although not specifically, for silicon nanopar-ticles.

Since hydrogenated amorphous siliconsa-Si:Hd hasmany technological applications,17 MD simulations havebeen employed to investigate the reaction dynamics ofatomic hydrogen witha-Si:H surfaces18 and H2 adsorptionand desorption on silicon surfaces.19,20 Moreover, the effectof the radical energization on radical diffusion on a substratewas studied by impinging SiH3 radicalssa likely precursorfor Si growthd, to a-Si:H thin film growth.21–27Ramalingamet al. found that thermal and energetic SinHx s1,nø6;0øxø13d clusters reacted with a probability greater than85% with crystalline surfaces and witha-Si:H. Monte Carlosimulations have also been applied to studya-Si:H thinfilms.28–30Experiments have shown that hydrogen atoms ter-minate surface statessdangling bondsd and stabilize thestructure of Sin clusters sn=2–10d sRef. 31d and that thehydride-coated surface prevents the oxygen passivation ofthe surface.32

The review of the previous experimental and numericalstudies on the topic of hydrogen termination of the surface ofSi shows that surface passivation might be a very effectivestrategy to control the growth and morphology of nanopar-ticles grown from the vapor. More recently we have beenexploring the possibility of a passivation layer to retard thegrowth of nanoparticles. In a molecular dynamics study,Hawa and Zachariah33 evaluated the particle-particle interac-tion of hydrogen-surface-terminated silicon nanoparticles forsizes between 200 and 6400 silicon atoms at 300–1800 K.We reported that the presence of hydrogen passivation sur-face on silicon nanoparticles prevented coalescence betweenparticles under thermal collision conditions. The critical ap-proach energy of particle coalescence was significantlyhigher than the thermal collision energy, and it was found toincrease with increasing particle size but decreased with in-creasing particle temperature. We also found that both solidand liquid droplets were seen to bounce at thermal energiesat the temperature range of our study, and in some cases,“superelastic” collisions were observed, where the reboundkinetic energy of the droplet is higher than the approachenergy. Moreover, when particles had only 75% of the avail-able surface sites covered with hydrogen, the critical ap-proach energy was significantly reduced but still requiredsuperthermal activation.

The above work leads us to study the effect of surfacepassivation on the dynamics of particle coalescence. Control-ling the particle size is one of the most difficult problems inthe formation of nanoparticles, in part because the character-istic coalescence time has a nonlinear dependence on tem-perature. Furthermore, understanding the dynamics of coa-lescence of surface passivated particles may be important forcontrolling the morphology of nanoparticles grown from the

vapor. For bare particles of equivalent size the characteristiccoalescence time calculated from a solid state diffusionmodel is written as34

t f =3kTpN

64psD, s1d

whereTp is the particle temperature,N is the number con-centration, D is the diffusion coefficient reported as anArrhenius function of the temperature, ands is the surfacetension. The coalescence time, which increases as the fourthirds power of the number concentrationN, is also exten-sively used for the prediction.35,36 More recently, the relax-ation time for solids was found to increase exponentially as afunction of the cluster size.37 For viscous flow, the coales-cence time is given by38

t f =hdp

s, s2d

where dp is the diameter of the particle andh is thetemperature-dependent viscosity. In a prior molecular dy-namicssMDd study of the kinetics of growth and coalescenceof silicon nanoparticles we found that Eqs.s1d and s2d pro-vide a reasonable quantitative description of nanoparticlecoalescence.39 However, in this study we will need to con-sider the effect of surface passivation on the coalescenceprocess, and the applicability or modification to models de-scribed by Eqs.s1d and s2d.

In the above relationsfEqs. s1d and s2dg surface tensionand atomic transportsdiffusion coefficientd play an importantrole in coalescence. In our recent study of the effect of hy-drogen passivation surface on the surface tension and on thediffusion coefficient of the silicon nanoparticles by MDsimulation, we found that the surface tension of perfectlycoated particles was about a half that of bare particles, butthat the diffusion coefficient increased by only about 10%with hydrogen coating.40 The particle pressure with hydro-gen coating was also reduced due to the decrease of thesurface tension. Moreover, the surface tension did not de-pend on particle size. Recent geometric optimizations andMD simulations based on an empirical tight-binding ap-proach for studying the structure of fully and partially hydro-genated Si nanocrystals also showed that the structural prop-erties have little size effect, contrary to their electronicproperties,41 and their results are in agreement with the x-raydiffraction measurements.42

From a practical point of view it is well known that sili-con particles grown from silane contain significant amountsof hydrogen.43,44 As we mentioned earlier, the pulsed laserablation technique is used to generate hydrogenated siliconnanoparticles. It is therefore quite conceivable that one couldproduce such materials from the vapor with a surface coatingof hydrogen near saturation.

The work in this paper is focused on understanding thecoalescence mechanisms of surface-coated nanoparticles. Wepresent a mathematical model of surface-coated particlescoalescence based on an extension of Frenkel’s model.38 Wewill also use MD simulations with a reparametrized KTSpotential33 to track the evolution of a coalescence process

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and obtain the characteristic coalescence time. We clarify therelationship between the dynamics of the coalescence andthe surface tension of the particles, and provide insight intothe relationship between the mathematical model and theMD simulation results, and identify the mechanism of sur-face passivated particle coalescence.

II. MATHEMATICAL MODEL FOR PARTICLECOALESCENCE

Following Frenkel’s mathematical analysis,38 we considerthe coalescence of two liquid drops, which are initially incontact with each other at a single point. We also assume thatthe remaining parts of the two drops maintain a sphericalshapessee Fig. 1d. Under this condition the distance betweenthe centers of each drop are equal to 2a cosu, wherea de-notes the radius of the spherical portion of the drops. Fromconservation of mass of each drop, the relationship betweenthe radiusa, as well as the total surface of the coalescingparticles at any timet and att=0, can be obtainedssee Fren-keld. Figure 2 shows the radiusa as a function ofu. Sinceadoes not change significantly when 0,u,30°, we assumethat a>a0 for small angle ofu. Then, the change of thesurface areaDS can be obtained as

DS= 4pa02FDus− sinud + Du2S−

cosu

2DG , s3d

whereDu!1. Note that Frenkel considered the second orderterm dominates the sintering process, but this is true whenu=0. However, the first order term is always larger whenu.Du. Moreover, according to Fig. 2, the assumptiona>a0can be applied to smallu. Thus, we consider the first order

term for the sintering process and neglect the second orderterm in our analysis.

The internal energy, due to the change in surface areaS, isrelated to the surface tension, such that the rate of energychange during the coalescence of two drops can be expressedas

− sdS

dt= − 4pa0

2sSsinudu

dtD , s4d

wheres denotes the surface tension of the drop. Equations4dmust balance with the rate of energy dissipation due to theviscous flow of the liquid. The extent of this flow can bespecified by the decrease of the distance between the centerof each drop, and the surface of contact with the other drop.The velocity can be obtained as

v =a0 cosu − a0 cossu + Dud

Dt< a0 sinu

du

dt. s5d

The velocity gradientg can be defined, accordingly, asv /a.Under such conditions the energy dissipated in the wholebody per unit time is equal, approximately, to38

2hE0

a0

g22s4pr2ddr =16

3pa0

3hSsinudu

dtD2

, s6d

whereh is the viscosity.In our study, we need to consider the effect of surface

passivationshydrogend on the coalescence process. We as-sume that the rate of energy of both repulsion, between hy-drogen’s, and relocation of hydrogen atoms due to the de-crease of the surface area is expressed as

4pa02bjsudSsinu

du

dtD , s7d

whereb is a positive parameter in energy per unit area andjis a nondimensional function ofu. We assume that the pa-rameterb is a linear combination of the effect of the repul-sionbrep and the relocationbrel of the surface atoms, and thatthey are a function of the amount of hydrogen atoms on thesurface. We note that pure silicon particles would attract eachother, while the hydrogen monolayer creates repulsive forcesbetween the particles. The effective reaction contact areamade by an interaction of two spherical particles of the samesize is schematically shown in Fig. 3 and given by

pasfc + a sin2 ud, s8d

where fc is a cutoff length of the surface atoms obtained bythe reparametrized KTS potential33 mentioned in a later sec-tion. The first term is the surface of the sector of the spheri-cal particle obtained from the cutoff length, and the secondterm is the surface of contact with the other drop. Since thehydrogen monolayer exists only on the surface of the spheri-cal particles, the portion of the reactive contact area coveredby the hydrogen monolayer is determined by

FIG. 1. Geometric representation of the coalescence of the twospherical drops.

FIG. 2. The radiusa as a function ofu.

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jExactsud = 1YS1 +a

fcsin2 uD for 0 ø u ø 87.7 °

=1YS1 +sin2 u

2 cosuD for 87.7 ° , u , 90 ° .

s9d

Note that near 90° there is a rapid decrease of the reactivesurface area of the spherical particle. Figure 3 also showsjExact as a dashed line when the ratio ofa/ fc is 10. Theapproximated expression ofj is

jApproxsud = 1YS1 +a

fc

sin2 u

cos1/4 uD . s10d

The above expression is described as a solid line in Fig. 3.Note that expressions10d describes the dashed line wellwhenu is small, and that our analysis is limited for smallu.Expressions10d indicates that whenu is smallsinitial periodof coalescence processd a large amount of work is needed forparticle reaction against the hydrogen passivation surfaceand for particle coalescence to relocate the surface atoms.However, after the initial stage of coalescence, the work forrelocation of hydrogen atoms quickly decays and disappearswhenu is p /2.

Equating expressionss6d and s7d to s4d, we obtain thefollowing equation:

163 pa0

3hg2 + 4pa02bjsudg = 4pa0

2sg. s11d

Integrating over the entire process of the coalescence, whichis 0øuøp /2, gives

t =4

3a0hE

0

p/2 sinu

s − bjsuddu. s12d

It is clearly seen that the productbjsud must be less than thesurface tensions. Thus, 0øb,s. Note that the model im-plicitly neglects the initial approaching energy of the coa-lescing particles. The justification of the latter point is basedon the MD simulationssto be presented later in the textd, thatunder constant temperature processes, the collision energyhas a negligible after the initial contact of coalescing par-

ticles. The parameterb is zero when there is no surfacepassivation layer on the particles. In such a case, the time ofcomplete coalescence becomes

t =4

3

a0h

s, s13d

and is similar expression to the result obtained by Frenkel.38

III. COMPUTATIONAL MODEL AND SIMULATIONPROCEDURE

This study also involves atomistic simulations using clas-sical molecular dynamics. For this work we use the reparam-etrized KTS interatomic potential for the silicon-hydrogensystem developed by Hawa and ZachariahsHZd.33 This in-teratomic potential for silicon was developed by Stillingerand WebersSWd sRef. 45d and extended by Kohenet al.46 toinclude Si-H and H-H interactions. Similar sets of potentialenergy functions have also been developed by Murty andAtwater,47 Ohiraet al.,23,24,26and Ramalingamet al.48 wherea Tersoff-type potential49–52 was extended to describe inter-atomic interactions in the Si:H system. This extended ver-sion of the Tersoff potential has been tested successfully forits accuracy in describing the Si:H system in several earlierstudies; however, the simulation of liquid silicon was notwell described by the potential.49 By contrast, the extendedSW potentialsHZd was designed to describe interactions inboth solid and liquid forms of silicon. Since most synthesisprocesses leading to cluster formation occur at high tempera-ture, cluster growth by coalescence is dominated by liquid-like characteristics, and the accuracy of the SW potentialincreases with increasing particle size or temperature, we usethis potential for our investigations. The HZ potential energyis a sum of two- and three-body interactions, and the detailsof the model and its parameters are given in the literaturesHawa and Zachariahd.33

All simulations were run either on an Origin or Cray T3Ecomputer running up to 64 processors. Atom trajectorieswere determined by integrating the classical equations ofmotion using the velocity form of the Verlet algorithm,53

with rescaling of atomic velocities at each time step toachieve temperature control for constant temperature simula-

FIG. 4. Temperature evolution during sintering for bare andcoated 6 nm particles initially at 1500 K.FIG. 3. j as a function ofu with the sketch of the effective

reaction contact area. An exact and an approximatedj are describedwith dashed and solid lines.

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tions. Time steps of 0.5 and 0.05 fs were typically used forpure silicon clusters and for hydrogen-coated clusters, re-spectively, to ensure energy conservation, and the Verletneighbor list with parallel architecture was employed in allthe simulations, with a neighbor list renewal every 10 steps.The simulations take place in a spherical cavity of 20 nmradius using an elastic boundary condition.

The first step in the equilibration process was to preparepure silicon particles of various sizess2, 3, 4, and 6 nmds200, 800, 1600, and 6400 Si atomsd at 300 K. After removalof angular momentum, the particle temperature was raised to2100 K for 1 ns. Particle temperatures were then reducedslowly to 300 K and equilibrated for 50 ps. The next stepwas to coat the particles with hydrogen atoms. Since theparticles were already equilibrated, almost all surface atomshad a coordination number of three. A hydrogen atom wasplaced on each surface silicon atoms at a distance of 1.5 Å,and the particle temperature was maintained at 300 K for 10ps. Any hydrogen atoms that were released from the surfacewere removed from the simulation, and the dynamics re-peated for 10 ps. As a result, the numbers of hydrogensplaced on the silicon particles made of 200, 800, 1600, and6400 Si atoms are 74, 211, 367, and 785. For preparation ofpartially hydrogen coated particles, appropriate number ofhydrogens were randomly removed from the particles, andagain, the dynamics repeated for 10 ps for equilibration. Af-ter generating the hydrogen monolayer on the silicon par-ticles, the temperature of the particles was slowly raised tothe desired temperatures of 1000 and 1500 K and maintainedat constant temperature for 50 ps. For the last step in thepreparation process, the simulations were switched to a con-stant energy calculation for 20 ps. If the average temperatureof the particle deviated by more than 10 K over this period,the equilibration process was repeated until the particle tem-perature deviated by less than 10 K. Duplicated particleswere generated and then collided with critical collision ener-gies for adhesionsnot static coalescenced found in Hawa andZachariah.33

IV. RESULTS AND DISCUSSION

A. Fully coated vs bare particles

During the coalescence of two particles, the formation ofnew chemical bonds between the atoms decreases the poten-tial energy of the system, and decreases the total surfacearea. For two isolated particles under the adiabatic condi-tions, as the total energy is conserved, the decrease in poten-tial energy causes a rise in thermal motion of atoms in theparticle, which is reflected as an increase in particletemperature.39 Figure 4 shows the temperature change duringthe coalescence of two 6 nm bare, and fully coated particlesin a constant energy simulation. In this case particles have aninitial temperature of 1500 K and are then given an addi-tional directional velocity so that they collide with a kineticenergy of 110 000 K. The high collision energy is based onour prior study of the critical collision energy for reactionbetween fully coated silicon particles.33 It should be under-stood that the collision energy is small compared with thetotal energy of the system, and does not have a significantcontribution in the observed temperature rise. It can be seenfrom Fig. 4 that the uncoated particles show a rapid tempera-ture rise during the first 20 pssrise of temperature by 60 Kd,resulting from the energy release during new bond forma-tion. On the other hand, the temperature of the coated par-ticles does not change, but goes through an induction period,for the first 30 ps. It then increases slowly by 30 K, which isabout a half the temperature rise as compared to the bareparticle coalescence case. This difference in temperature is aconsequence of formation of 379 vs 183 new bonds in bareand fully coated particles, respectively. This may be an indi-cation of change of the particle structure due to the hydrogencoating and will be discussed in detail later in the manu-script.

The corresponding structural dynamics can be studiedfrom the temporal variation of the reduced moment of inertiain the direction of collision and particle morphology, asshown in Fig. 5. The reduced moment of inertia converges to

FIG. 5. sColor onlined Temporal snapshots of the morphologyduring sintering of coated 6 nm particles. Inset graphs show thetemporal behavior of the reduced moments of inertia for coated andbare particles. FIG. 6. sColor onlined Temporal evolution of the atomic behav-

ior near the initial contact region showing hydrogen hopping andthe movement of bare silicon to the surface.

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unity when the particle is spherical. However, as these par-ticles s2–6 nmd are under constant movement due to theatomic motion, they would never become perfectly spherical.Therefore, we define a reduced moment of inertia of 1.1 asthe condition for achieving complete coalescence. It can beseen that for the case of bare silicon particles, the reducedmoment of inertia converges to 1.1sspherical shaped mono-tonically. For the bare particles, the interparticle interactiondue to the surface atoms is attractive and there is no need toprovide a potential energy barrier to induce the reaction. Incontrast to this, the fully coated clusters, and as reflected inthe temperature rise plot shown in Fig. 4, show an inductionperiod before the reduction in the moment of inertia. In fact,the moment of inertia initially increases after the collision,reaches a maximum, and then subsequently decreases towardunity. In this case the initial interparticle interaction is be-tween the surface hydrogen atoms, and is repulsive.

The initial increase of the moment of inertia is attributedto an increase in total surface area of the coalescing particles.Figure 6 demonstrates the temporal evolution of the atomicbehavior near the initial contact surface. The small light grayand large dark gray spheres represent H and Si atoms in the

figure. Two Si atoms colored white are initially beneath thesurface of the coalescing particlefFig. 6sadg, as coalescencebegins, one of the white atoms comes to the surfacefFig.6sbdg. A second one follows the first and stretches the surfaceand leaves a bare silicon surfacefFig. 6scdg. We note thatrather than a Si-H molecule moving interior to the particle toreduce surface area, bare silicon actually moves to the exte-rior, and at least initially this is responsible for an initialincrease in moment of inertia. At no time do we see H atomsenter the interior of the particle. However, we do observehopping of H atoms on the surface during the entire coales-cence period and the opening of bare silicon spots facilitatesthis movement. In image 6sdd we see the beginning of thismigration process where a white Sisbared atom and a hydro-genated neighbor experience a hydrogen exchange. In Fig.6sed we see that the previously hydrogenated Si is pulled outof the surface, and donates its hydrogen to the neighboringwhite Si atomfFig. 6sfdg. These events suggest that the math-ematical model for the coalescence of coated particles needsto account for the relocation of surface atoms.

To better understand the nature of the evolution in themorphology, we study the properties of both bare and coated

FIG. 7. Time series of particle morphology imaged with respect to atomic velocity vectors for two 6 nm particles at 1500 K.sad, sbd, andscd are bare andsdd, sed, andsfd are coated particles.

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particles in detail. The change in morphology of the clusterscould be through movement of atoms via bulk fluid motionor by individual atomic diffusion processes. Figure 7 dem-onstrates the temporal evolution of the atomic velocity vec-tors, shown as a cross section slice of thickness −0.5 nm,y,0.5 nm, during a coalescence event of bare and coatedparticles. As the bare particles approach, surface atoms areaccelerated toward each other, as they feel an attractive forcefFig. 7sadg, which continues even after the collisionfFig.7sbdg. Once the collision event has progressed, diffusion pro-cesses drive the agglomerate to become a spherefFig. 7scdg.On the other hand, as the fully coated particles approach, thesurface hydrogen atoms feel a repulsive forcefFig. 7sddg.After reaction, the surface atoms in the contact area moveaway from the neck of the agglomerate, while interiorscoredatoms move toward the neckfFig. 7sedg. This is schemati-cally illustrated by the large arrows showing the net directionof atom movement. The surface atoms being squeezed out ofthe neck region, move along with the surface of the particles.This is manifested by both Si-H diffusion and H hopping.Finally in Fig. 7sfd the incoming interior atoms widens theneck of the agglomerate and drives it to a sphere. Accordingto Fig. 5, the coated particles coalescence processfFigs.7sdd–7sfdg requires more time than the bare particle coales-cence processfFigs. 7sad–7scdg. After the process 7sdd–7sfd,the reduced moment of inertia monotonically converges tounity, and the temporal evolution of particle morphology isvery similar to that seen for bare particles.

During the coalescence process, temperature change ofclusters affects properties such as diffusivity and complicatesthe calculation of characteristic coalescence time from Eqs.s1d, s2d, ands12d. In order to simplify this problem we choseto study the coalescence process under constant temperatureconditions. In point of fact for a real growth process, par-ticles of this size would not see temperature excursions, sincethey are effectively thermostated by surrounding gas.16 Themolecular dynamics simulation of the reduced moment ofinertia for both bare and fully coated 6 nm particles at 1500K shown as dashed lines are presented in Fig. 8, and aresimilar in form to that seen in Fig. 5. A direct observation ofthe two curves shows that the decay toward spherical shape

is similar once the initial induction period for the coatedparticles is accounted for. Temporal variations of the totalsurface area of coalescing particles obtained from our math-ematical models3d, s10d, and s12d are compared with thesimulation results for both bare as well as coated cases. Theradius a of 3 nm and the cutoff lengthfc of 0.3 nm werechosen, to give the functionjsud shown in Fig. 3. The pa-rameterb of 0.441 J/m2 was chosen to fit the moleculardynamics results. Note that our model does not describe thebehavior of the initial variation of the moment of inertia ofthe coated particles, because of the assumption of sphericalshape during coalescence. However, the model predicts theinitial induction period by adjusting the parameterb. Ac-cording to our discussion in the previous section, this induc-tion period occurs due tosad diffusion of surface atoms alongthe particle surface,sbd movement of interior Si atoms nearthe surface toward the particle surface, andscd movement ofcore Si atoms to fill in the neck of the coalescing particles.During the initial contact period, the large magnitude of thefunction jsud retards particle coalescence. Moreover, it isclearly seen that our model not only describes the dynamicalbehavior of the moment of inertia after the initial inductionperiod, but also shows good agreement with the coalescencetime for bare as well as coated particles. Since the functionjsud decays significantly toward the end of the coalescenceprocess, the characteristic coalescence time for liquid drop-lets according to expressionss2d and s12d is approximatelyinversely proportional to the surface tension of the particles.We compare the characteristic coalescence time with the de-cay rate of the reduced moment of inertia,M. The surfacetensions of bare and fully coated particles were taken as0.826 and 0.442 J/m2, respectively, as computed by ourprior simulations, and the ratioscoated/sbare, was found to be0.54.40 We calculate the time of both bare and coated coales-cence processes from the reduced moment of inertia 2.5 to1.1 in Fig. 8. These periods are 31.2 and 64.0 ps for bare andcoated cases, and their ratio is 0.48. We also obtain the ratioof those decay rates observed,MbareandMcoated, from Fig. 8,which gives 0.55. Both decay rates,M, are the times requiredto decrease the reduced moment of inertia from 1.5 to 1.2,where the growing particle is nearly spherical. These ratiosclearly indicate excellent agreement with the ratio of thecharacteristic coalescence times, and those results suggestthat once a standard coalescence processfe.g., after the pe-riod of Fig. 7sfdg is initiated, the coalescence event between acoated and uncoated are primarily controlled by the sameinternal transport/kinetic processes, and that the difference inthe predicted coalescence time is determined by the differ-ences in surface tension. The deviation between the math-ematical model and the simulation results near the end of thecoalescence process of both bare and fully coated particles isdue to the assumption that particle radius does not change.

B. Size and temperature dependence

The effect of the particle size and the initial particle tem-perature on the particle coalescence was also studied. Figures9sad and 9sbd show the temporal behavior of temperature andreduced moment of inertia for bare and fully coated 3 nm

FIG. 8. Temporal behavior of the reduced moment of inertia forbare and coated 6 nm particles during a constant temperatures1500Kd coalescence process. Solid lines, model; dashed line, MDsimulation.

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particles under an energy conservation coalescence process.The initial particle temperature is 1500 K and the initial ap-proaching kinetic energy of 35 000 K corresponds to thecritical approach energy for this particular size and particletemperature.33 By comparison with the 6 nm particle case,the temperature of bare 3 nm particles after the coalescenceis higher than that of 6 nm particlesssee also Fig. 4d. Thisresults from the smaller particles having a greater fractionalincrease in the number of new bonds formed, which releaseheat, and the lower heat capacity of the smaller particles.

However, the temperature increase of coated coalescingparticles is again half that of bare particles, similar to the 6nm case. Also, the dynamical behavior of temperature andreduced moment of inertia are similar to the coalescence of 6nm particles. Figure 9sbd shows that the coated particles coa-lesce a factor of 3.7 times slower than the bare particles andcoalescence much faster, about a factor of 2, relative to thecorresponding 6 nm particles.

Figures 9scd and 9sdd show that the temporal variations oftemperature and reduced moment of inertia of 3 nm at alower temperature of 1000 K and an initial approaching ki-netic energy is 60 000 Kscritical approaching energy for thissize and temperature33d. The behavior is similar to the highertemperature case; however, the coalescence process is con-siderably slowersby a factor of 10d and therefore so is thetemperature rise. The temperature increase of about 100 K isless than the 1500 K case, which is about 150 Kfsee Fig.9sadg. Since the particle sizes are the same, and in both casescoalescence leads to spherical particles, the number of newbondss89 at 1500 K, 100 at 1000 Kd due to the coalescenceis comparable to each other. Therefore, the temperature riseis proportional to their initial particle temperatures and alsoimplies that the heat capacity is relatively constant over thistemperature range. On the other hand, the temperature of thecoated particle increases slowly, and at complete coalescencethe temperature rise is only a third that of the bare particle.We discuss the reasons for this effect in the section on therole of extent of hydrogen surface coverage.

Coalescence times simulated under constant temperatureprocesses as a function of particle size at 1000 Ksad and1500 K sbd are summarized in Fig. 10. Note that the hori-zontal axes in the figures are presented as the number ofatoms at 1000 K and atoms to the one-third power at 1500 K.This reflects the power dependence to atom number in thephenomenological models for solids and liquids, respectivelyfEqs.s1d and s2dg. At 1500 K the coalescence times of bothbare and coated particles larger than 800 Si atomssabout 3nm sized increase linearly with the diameter of the particle, inagreement with Eq.s2d. Moreover, at 1000 K the coalescencetimes of both bare and coated particles increase linearly withthe volume of the particle suggested in Eq.s1d, and is differ-ent from the higher power dependence model.35–37 At thistemperature, and based on our prior work54 particles are in a

FIG. 9. Temperature and reduced moment of inertia of the coa-lescing pair for both bare and coated 3 nm particlessad andsbd 1500K initial temperature andscd and sdd 1000 K initial temperature.

FIG. 10. Coalescence times as a function of particle sizesad1000 K andsbd 1500 K.

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solid/liquid transition phase for these particle sizes. Oneshould expect, however, to observe higher power depen-dences when particle temperatures are even lower; however,because of the considerably slower rate of coalescence sucha computation is not tractable with our MD methods. In ad-dition, Xing and Rosner introduced a surface curvature-dependent diffusivity and applied it to the coalescencemodel.55 They found that the coalescence times were manyorders of magnitude smaller than those obtained from themacroscopic properties. In our simulations in the range ofless than 1000 Si atoms at 1500 K, both bare and coatedparticles show the effect of surface curvature dependence onthe coalescence times.

Coalescence times of fully coated particles are longersabout a factor of 3–5d than that of bare particles at bothtemperatures, and also show a similar particle size depen-dence as those of bare particles of corresponding tempera-tures. Under constant temperature processes, we found thatthe differences in coalescence behavior between bare andfully coated particles were the initial adhesion-coalescenceprocess, and the decay rate of the reduced moment of inertiaassociated with a change in surface tension. While manymacroscopic parametersstemperature, surface tension, etc.daffect particle coalescence, at the microscopic level coales-cence is ultimately an atomic diffusion process, and we ob-serve the effect of these macroscopic parameters on atomicdiffusion through the sintering process.56–58As such we ex-pect coalescence to be self-similar for both bare and coatedclusters. The decrease in surface tension implies a great sur-face atom stability and slows the coalescence of coated par-ticles by retarding diffusion; however, both diffusion mecha-nisms are similar. The initial adhesion-coalescence processsimply delays the coalescence process, but does not alter thenature of the coalescence behavior. Therefore, while thecoated particles can significantly retard coalescence, once theinitial reaction barrier is overcome, through the critical col-lision energy, the behavior of the size-dependent coalescencetimes of coated particles is similar to that of bare particles.

C. Partially coated particles

The effect of surface coverage on the particle coalescencewas also studied. We prepared 30%s236 H atomsd, 50%s393 H atomsd, 60%s471 H atomsd, 75%s589 H atomsd, and85% s668 H atomsd coated 6 nm silicon particles at 1500 K,and these particles were then used to study coalescence un-der constant temperature conditions. The molecular dynam-ics simulation for the temporal variation of the reduced mo-ment of inertia are presented in Fig. 11 as dashed lines, forbare to fully s100%d coated particles. Clearly, the coales-cence time is significantly, but smoothly, a function of hy-drogen surface coverage. During the initial induction period,coalescence as measured by the reduction in moment of in-ertia shown a monotonic decrease with time. However, forparticles with surface coverage of 75% or higher, particlesexperience an induction period as previously described. Themoment of inertia decays to a local minimum, before in-creasing again, followed by a monotonic drop-off as coales-cence takes place. We recall that the increase in surface area

during the induction period results from subsurface siliconatoms coming to the surface. The growth rates from the mo-ment of inertia are qualitatively similar to those of anyamount above 75% coating, but the growth periods becomelonger with increasing surface coverage. Also according toour earlier discussion, the increase of surface area of thecoalescing particles is seen as an increase in the moment ofinertia. Since the effect of the extent of surface coverage onthe Si diffusivity was found to be negligible, the movementof interior Si atoms toward the surface is independent ofsurface coverage.40 However, the greater the surface cover-age the greater the number of Si atoms that must move to thesurface for coalescence to occur. Thus, the transient growthin surface area during the induction period should be propor-tional to surface coverage. The MD simulation results indi-cate that the higher the surface coverage, the greater the in-crease of surface area, and why the induction periodincreases as the extent of coating increases.

These molecular dynamics results have been comparedwith the mathematical models12d shown as solid lines in thesame figure. The surface tensions from our previous MDsimulations were found to be 0.6394, 0.7548, and0.8209 J/m2 for 85, 75, and 50% coated particles, respec-tively. This conditions corresponded tob’s of 0.639385,0.75475, and 0.80000 J/m2 as fit the molecular dynamicssimulations for the three coverages. As we discussed in theprevious section, the nature of our model is such that theinitial variation of the moment of inertia cannot be predictedby our model. However, the model successfully describes theinitial induction period, and it shows very good agreementwith the monotonic decay in the moment of inertia. Note thatour model cannot describe the end of the coalescence processbecause the particle radiusa is assumed constant. This com-parison indicates that the model predicts the overall processas comprised of an induction period and coalescence period,of any extent of coverage by appropriate choice ofb.

We briefly discuss the nature of theb parameter whichcan be used to determine the initial induction period and theenergy requirement for both repulsion and relocation of sur-face atoms during the initial contact. If one considers thatbis a modifier to the surface tension we can define a newparameterG=ss−bd, the effective surface tension. Figure 12

FIG. 11. Reduced moment of inertia of 6 nm particles duringsintering for various amounts of hydrogen coverage at 1500 K.Solid line, model; dashed line, MD simulation.

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shows the effective surface tension normalized by the abso-lute surface tension as a function of surface coverage. Atvery low coverage,b is small, and the effective surface ten-sion is near the true surface tension. With increasing cover-age, the effective surface tension decreases, making it harderfor particles to coalesce.

When the extent of coverage is below 60%, the normal-ized effective surface tension decays exponentially with theextent of coating. Above about 67%, the normalized effectivesurface tension decreases even more rapidly. From the pre-vious section, we saw that for bare particles the interparticleinteraction between surface atoms is attractive and no poten-tial energy barrier exists to coalescence. In contrast forcoated particles, the interparticle interaction is repulsive andincreases with increasing hydrogen coverage. The dashedline in the Fig. 12 describes the effect of repulsion, and thecorresponding parameter we define asbrep as a function ofcoverage

brep= ss1 − 699 450e−0.26Pcd for any Pc, s14d

wherePc is the percent coating. WhenPcù67, we observean induction period as the time necessary to relocate surfaceatoms ssee Fig. 11d. The change in slope seen in Fig. 12corresponds to the appearance of the induction period and anew parameterbrel=b−brep which corresponds to the energyneeded not only the repulsionsdashed line in Fig. 12d butalso for relocation of surface hydrogen and silicon atomsssolid lined. This effect increases withPc and causes the pa-rameterb to approach the surface tension rapidly. The pa-rameterbrel corresponding to such a relocation process isgiven by

brel = ss699 450e−0.26Pc − e−0.0467Pcd for Pc ù 67. s15d

The parameterb is effectively given asbrep for Pcø60 andbrep+brel for Pcù67.

We have also studied the effect of the extent of coating onthe temporal variation of temperature during sintering. Themolecular dynamics simulations for various extents of coat-ing were carried out under the constant energy conditions,and the results for particle temperatures shown in Fig. 13.Clearly seen is that all with increasing surface coverage, the

temperature rise of this exothermic event is moderated rela-tive to bare particles. This is expected as the temperature riseis associated with the formation in net of new chemicalbonds. We see that for particles with coverage of 75% or lessthe final temperatures of the particles are essentially equiva-lent. While at higher surface coverage the rise in temperatureis tempered.

When two equivalent spherical particles coalesce to forma larger spherical particle, the surface area decreases about20%. This implies that when hydrogen atoms cover morethan 80% of the surface of the initial coalescing particles,there exists an excess amount of hydrogen after the comple-tion of coalescence. Since it was found that the hydrogenatoms always stay on the surface during the entire period ofcoalescence, the existence of hydrogen modifies the structureof silicon atoms near the surface, and moderates the finaltemperature of the coated particle. The number of SiH2 andSiH3’s on the surface of 6 nm particles before and after coa-lescence were found to increase from 38 to 94 and from 0 to4 for 100% coated particles during coalescence.

V. CONCLUSION

Classical molecular dynamics simulations using the rep-arametrized three-body KTS potential were conducted tostudy the coalescence behavior of hydrogen-terminated sili-con nanoparticles. The simulations were carried out over aparticle size range of 2–6 nm and at 1000 and 1500 K. It wasfound that there exist two steps during the coalescence ofcoated particles. The initial step consists of adhesion of twoparticles and relocations of surface atoms near the adhesionregion. This happens due to the existence of H atoms on thesurface of the coalescing pair of coated particles. This initialstep requires a relatively longer time as compared to the timerequired for the completion of the coalescence of bare par-ticles. The last step in coalescence consists of the nominalcoalescence similar to that observed during coalescence ofbare particles and primarily depends on the surface tensionand diffusivity of the particle. A mathematical model hasbeen developed that is able to capture both the induction andcoalescence event accurately and can be used in phenomeno-logical models for aerosol dynamics. The coalescence time

FIG. 12. Relationship between the parameterb and thecoverage.

FIG. 13. Temporal behavior of particle temperatures during sin-tering for various amounts of coating.

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of the entire process takes longer with increasing particlesize and decreasing initial particle temperature. The totalcoalescence time of coated particles is about 3 to 5 timeslonger than that of bare particle and the temperature rise ofcoated particles was found to be about half of that of thecorresponding bare particles. As the particle sinters the num-bers of SiH2 and SiH3 species on the surface of the particleincrease due to the reduction in total surface area and thepresence of excess H atoms. We also studied the effect of theextent of H coverage on the particle coalescence process and

observed a steady decrease in coalescence time with decreas-ing hydrogen coverage.

ACKNOWLEDGMENTS

This work is supported by NSF Grant No. CTS-0083062,the Army High Performance Computing Research CenterContract No. DAAD19-01-2-0014, the Minnesota Super-Computer Center, and the National Institute of Standards andTechnology.

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