Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies

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Series II: Mathematics, Physics and Chemistry - Voi. 55

Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies

edited by

Yves Pauleau School of Electrochemical and Electrometallurgical Engineering, National Polytechnic Institute of Grenoble, Grenoble, France

.... " Springer-Science+Business Media, B.V.

Proceedings of the NATO Advanced Study Institute on Chemical Physics ofThin Film Deposition Processes for Micro- and Nano-Technologies Kaunas, Lithuania 3-14 September 2001

A C.1. P. Catalogue record for this book is available from the Library of Congress.

ISBN 978-1-4020-0525-1 ISBN 978-94-010-0353-7 (eBook) DOI 10.1007/978-94-010-0353-7

Printed on acid-free paper

AII Rights Reserved ©2002 Springer Science+Business Media Dordrecht Originally published by Kluwer Academic Publishers in 2002 Softcover reprint of the hardcover 1st edition 2002 No part of the material protected by this copyright notice may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying, recording or by any information storage and retrieval system, without written permission from the copyright owner.

TABLE OF CONTENTS

Preface

List of Participants

List of Contributors

ELECTROPLATING AND ELECTROLESS DEPOSITION PROCESSES FORELECTRONIC COMPONENTS AND MICROSYSTEMS

T.E.G. Daenen and D.L. de Kubber

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SELF-ASSEMBLED ELECTROACTNE ULTRATHIN FILMST.P. Cassagneau 19

FEATURE AND MECHANISMS OF LAYER GROWfH IN LIQUID PHASEEPITAXY OF SEMICONDUCTOR MATERIALS

M. Konuma 43

SOL-GEL DEPOSITION PROCESSES OF THIN CERAMIC FILMSD. Sporn, P. LObmann, U. Guntow, and W. Glaubitt 69

THIN FILM DEPOSITION BY SOL-GEL AND CVD PROCESSING OFMErAL-ORGANIC PRECURSORS

S. Mathur 91

NUMERICAL SIMULATION OF FLOW AND CHEMISTRY IN THERMALCHEMICAL VAPOR DEPOSITION PROCESSES

e.R. Kleijn 119

CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTOR ANDOXIDE ALMS

G. Wahl, J. Arndt, and O. Stadel 145

SELECTNE CHEMICAL VAPOR DEPOSITION1. Holleman 171

PHOTOCHEMICAL VAPOUR DEPOSITION OF THIN ALMSSl.e. Irvine 199

REACTION MECHANISMS IN LASER-ASSISTED CHEMICAL VAPORDEPOSITION OF MICROSTRUCTURES

Y. Pauleau and D. Tonneau 223

VI

PROXIMAL PROBE INDUCED CHEMICAL PROCESSING FORNANODEVICE ELABORATION

D. Tonneau, N. Clement, A. Houel, N. Bonnail, H. Dallaporta. andV. Safarov 255

MOLECULAR DYNAMICS SIMULATION OF THIN ALM GROWTH WITHENERGETIC ATOMS

C.M. Gilmore and J.A. Sprague 283

DEPOSITION OF THIN ALMS BY SPUTTERINGW. Gulbinski 309

MASS-TRANSPORT IN AN AUSTENITIC STAINLESS STEEL UNDERHIGH-FLUX, LOW-ENERGY NITROGEN ION BOMBARDMENT ATELEVATED TEMPERATURE

L. Pranevicius, C. Templier, J.-P. Riviere, S. Muzard, J. Dudonis,L.L. Pranevicius, D. Milcius, and G. Abrasonis 335

INDEX 361

PREFACE

Conductive, dielectric, semiconducting, superconducting, magnetic, piezoelectric andferroelectric thin films are currently deposited or synthesized for advanced micro- andnano-technologies (microelectronics, optoelectronics, optics, sensors, Microsystems, etc.).These films can be deposited by various techniques such as electroplating, liquid phaseepitaxy, sol-gel, physical and chemical vapor deposition (PVO and CVO). Highlysophisticated deposition techniques based on ion beam, laser beam, plasma and vacuumtechnology are now emerging from laboratories and some of them are achieving maturedevelopment for applications in thin film technology. This diversity increases thecomplexity of the field of thin film deposition processes, which are critical steps in thefabrication of devices for future and emerging technologies. A particular challenge for theindustry is to establish and develop technological facilities required for the production ofthin films. The development of techniques and the achievement of a good understandingof the basic physical and chemical aspects involved in the deposition of thin films arecrucial points for the successful production of devices required for information societytechnologies. However, it becomes difficult to maintain a clear overlook andunderstanding in this very interdisciplinary field of research and applications.

The main objectives of this NATO-ASI on "Chemical Physics of Thin Film DepositionProcesses for Micro- and Nano-Technologies" held in September 2001 in Kaunas,Lithuania were : (i) to address the state of the art in thin film deposition processes withemphasis on gas-phase and surface chemistry and its effects on growth rates andproperties of films for micro- and nano-technologies, (ii) to bring together aninternational group of physicists, chemists, researchers, engineers and internationallyrecognized lecturers in the field of thin film process engineering, and (iii) to learn eachother and discuss about fundamentals of film growth processes and depositiontechniques.The program was composed of four groups of lectures or key notes : (I) depositionprocesses of thin films from liquid solutions, (2) thermally-activated chemical vapordeposition processes of thin films, (3) photon and ion beam-induced chemical vapordeposition processes of microstructures, and (4) energetic physical vapor depositionprocesses of thin films.The major topics covered by this ASI include : electroplating and electroless depositionprocesses for electronic components and microsystems, self-assembled electroactiveultrathin films, reaction mechanisms in sol-gel deposition processes of thin films, featureand mechanisms of layer growth in liquid phase epitaxy of semiconductor materials,numerical modeling of flow and chemistry in thermal chemical vapor deposition,chemical vapor deposition of superconductor and oxide films, thin film deposition by 801­gel and chemical vapor deposition processing of metalorganic precursors, reactionmechanisms in chemical vapor deposition of nickel, aluminum, tungsten and copper films,selective chemical vapor deposition of thin films, photochemical vapor deposition of thinfilms, reaction mechanisms in laser-assisted chemical vapor deposition of metal andsilicon microstructures, proximal probe induced chemical processing for nanodeviceelaboration, molecular dynamics simulation of thin film growth with energetic atoms,deposition of thin films by sputtering, mass transport process in alloys under high flux,

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low energy, elevated temperature nitrogen ion bombardment, molecular ways tonanoparticles and films, non-destructive characterization of mechanical properties of non­homogeneous nanostruetured films, fundamental aspects, principles and fabricationprocesses of single electron devices.

Fundamental aspects related to thin fIlm deposition processes that are very crucial tocontrol the properties of thin fIlms and microstructures were investigated in detail andpresented at a tutorial level. These highly sophisticated deposition processes involve gasphase phenomena, surface chemistry, growth mechanisms and modeling approach. Thesevarious points were thoroughly described and discussed to provide a clear understandingof the growth of thin films and microstructures via thermally-activated, laser-induced,photon-assisted, ion beam-assisted and plasma-enhanced vapor deposition processes. Allthe steps from theory to experimental procedures and real fabrication problems of micro­and nano-devices received a suitable focus.

In addition to 15 lectures and 3 keynotes, two afternoon sessions and four evening postersessions were held for presentation of 56 contributed papers related to topics describedpreviously. Nine group discussions were organized to discuss in detail about the followingsubjects: (1) control of the morphology of films, (2) role of fluid dynamics in thin fIlmdeposition processes, (3) precursors and fIlms produced by sol-gel processes, (4)fundamental precursor-material correlation : from molecular clusters to nanoscalematerials, (5) novel characterization techniques to control nanoscale systems: growth andmechanical properties, (6) structure-oontrolled magnetic properties in electrochemicallydeposited thin films, (7) epitaxial growth of metastable compounds, (8) major parametersto be controlled in thin film deposition, and (9) recent advances and perspectives in III­nitrides technology.

The 76 participants represented universities (79 %), private companies (1.3 %) andgovernment-supported research laboratories (20 %). These participants came fromNATO countries (54 %), Eligible Partner countries (36 %), Mediterranean Dialoguecountries (7.9 %) and Non-Eligible Partner countries or European Union member stateswhich are not NATO countries (1.3 %). During these two weeks, all participantsworked very intensively with a very high regular attendance to lectures and othertechnical or social activities. The highly interdisciplinary nature of the ASI allowedparticipants to interchange ideas in an environment incentive to exchange of expertiseand scientific discussions. As a result, this ASI has opened a window of opportunitiesfor international collaborations and preparation of collaborative research programs.We would like to acknowledge the financial supports of NATO through the ScientificAffairs Division, the European Commission for a grant supporting the participation ofyoung European scientists as well as additional supports provided by the Office ofNaval Research, International Field Office (ONRIFO). In addition, we are grateful to allprogram administrators and/or directors and all the personnel in the Agencies mentionedabove as well as to the personnel of the Takioji Neris hotel in Kaunas who contributedwith their work, in one way to another, to the success of this Advanced Study Institute.

Y. PauleauGrenoble, FranceOctober 30,2001

LIST OF PARTICIPANTS

G. Abadias, Laboratoire de Metallurgie Physique, SP2MI, Teleport 2, Boulevard Marieet Pierre Curie, B.P. 30179,86962 Chasseneuil-Futuroscope Cedex, France.M.A. Abdellateef, Physics Department, Faculty of Science, Sohag, Egypt.R. AbdelRassoui, Mansoura University, Faculty of Engineering Communications andElectronics Eng. Dept, Mansoura 35516, EgyptS. Aizikovich, Rostov State University, Institute for Mechanics and AppliedMathematics, P.O. Box 4845, 344090 Rostov-on-Don, Russia.L. Augulis, Department of Physics, Kaunas University of Technology, Studentu 50,3031 Kaunas, Lithuania.R. Bankras, University of Twente, Dept EUHC, P.O. Box 217, 7500 AE Enschede,The Netherlands.J. Baranowska, Technical University of Szczecin, Institute of Materials Engineering, aI.Piastow 19,70-310 Szczecin, Poland.A. Biedunkiewicz, Technical University of Szczecin, Institute of Materials Engineering,al. Piastow 19,70-310 Szczecin, Poland.P. Bilkova, Charles University, Department of Macromolecular Physics, VHolesovickach 2, 18000 Prague 8, Czech Republic.V. Boev, Universidade do Minho, Departamento de Fisica, 4710-057 Braga, Portugal.E. Boguslavsky, Institute of Inorganic Chemistry, Lavrent'ev Avenue 3, Novosibirsk­90, 630090, Russia.A.S. Bouazzi, E.N.I.T., P.O. Box 37, Tunis-Belvedere 1012, Tunisia.T. Car, Ruder Boskovic Institute, Bijenicka cesta 52, ooסס1 Zagreb, Croatia.A.R. Casavola, Universita degli Studi di Bari, Departimento di Chimica, V. Orabona 4,70126 Bari, Italy.Th. Cassagneau, Max Planck Institute for Colloids and Interfaces, Am Muehlenberg 1,14476 Golm, Germany.M. Cekada, Jozef Stefan Institute. Jamova 39, 1000 Ljubljana. Slovenia.C. Chacon-Carrillo, Royal Institute of Technology (KTH), Materials Physics,Teknikringen 14, 10044 Stockholm, Sweden.J. Cizek, Department of Physics, University of West Bohemia, Univerzitni 22, 306 14Plzen, Czech Republic.Th.E.G. Daenen, Philips Galvanotechniek Eindhoven, Bldg SFO-130, P.O. Box 218,5600 MD Eindhoven, The Netherlands.P. Docheva, Rousse University, Department of Physics, 8 Studentska Street, 7017Rousse, Bulgaria.S. Dub, Institute for Superhard Materials of the UAS, Autozavodskaya 2, Kiev, 04074Ukraine.N. Dukstiene, Kaunas University of Technology, Physical Chemistry Department,Radvilene Str. 19,3028 Kaunas, Lithuania.M. Emziane, University of Liverpool, Materials Science and Engineering, Departmentof Engineering, Liverpool, 1.69 3GH, U.K.Y.M. Fahmy, National Research Center, Chemical Engineering and Pilot Plant Dept.,Dokki, Cairo, Egypt.

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R. Fritsche, Darmstadt University of Technology, Department of Materials andGeoscience, Surface Science Division, Petersenstrasse 23, Darmstadt, Germany.A. Galdikas, Physics Department, Kaunas University of Technology, 50 StudentuStreet, 3031 Kaunas, Lithuania.N. Gaponenko, Belarussian State University of Informatics and Radioelectronics, P.Browki Street 6, 220027 Minsk, Belarus.C.M. Gilmore, The George Washington University, Institute for Materials Science,School of Engineering and Applied Science, Washington D.C. 20052, U.S.A.D. Grigoriev, Department of Materials, Imperial College of Science, Technology andMedicine, Prince Consort Road, London SW7 2BP, U.K.W. Gulbinski, Technical University of Koszalin, Faculty of Mechanical Engineering,Department of Physics, 75-620 Koszalin, Poland.J. Holleman, University of Twente, MESA+ Institute, P.O. Box 217, 7500 AEEnschede, The Netherlands.I. Holowacz, Institute of Physics, Wroclaw University of Technology, WybnezeWyspianskiego 27, 50 370 Wroclaw, Poland.SJ.c. Irvine, Department of Chemistry, University of Wales Bangor, Gwynedd LL572UW, U.K.V. Kagadei, Research Institute of Semiconductor Devices, 99-A KrasnoarmeiskayaStreet, 634034 Tomsk, Russia.c.R. Kleijn, Delft University of Technology, Kramers Laboratorium voor FysischeTechnologie, Prins Bemhardlaan 6, 2628 BW Delft, The Netherlands.J. Kois, Institute of Materials Technology, Tallinn Technical University, Ehitajate tee 5,19086 Tallinn, Estonia.M. Konuma, Max-Planck-Institut ftir Festkorperforschung, Heisenbergstrasse I, 70569Stuttgart, Germany.T. Kopac, Zonguldak: Karaelmas University, Department of Chemistry, 67100Zonguldak, Turkey.A. Kovach, Research Institute for Technical Physics and Materials Science, Konkoly­Thege 51. 29-33, 1121 Budapest, Hungary.D. Kraft, Darmstadt University of Technology, Department of Materials andGeoscience, Surface Science Division, Petersenstrasse 23, 64287 Darmstadt, Germany.D. Lamb, Chemistry Department, UNW, Bangor, Gwynedd, LL57 2UW, U.K.G. Laukaitis, Kaunas University of Technology, Physics Department, Studentu 50, 3031Kaunas, Lithuania.A. Laurinavicius, Semiconductor Physics Institute, A. Gostauto Il, 2600 Vilnius,Lithuania.M. Lechna-Marczynska, Institute of Physics, Wroclaw University of Technology,Wybneze Wyspianskiego 27, 50 370 Wroclaw, Poland.P. Mandracci, Politecnico di Torino, Departimento di Fisica, Corso Duca degli Abruzzi,24, 10129 Torino, Italy.A. Maruska, Vytautas Magnus University, Department of General and BiologicalChemistry, Vileikos 8,3035 Kaunas, Lithuania.S. Mathur, Saarland University, Institute of Inorganic Chemistry, 1m Stadwald, 66041Saarbriicken, Germany.

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A. Megriche, Faculte des Sciences de Monastir, Avenue de l'Environnement, 5019Monastir, Tunisia.D. Milcius, Lithuania Energy Institute, Breslaujos 3, 3035 Kaunas, Lithuania.B.M. Mitu, National Institute of Lasers, Plasma and Radiation Physics, LowTemperature Plasma Physics Department, P.O. Box MG-16, Magulere, Bucharest,76900 Romania.F Mohasseb, Universite de Paris 13, LIMHP - CNRS, 99 Avenue J.B. Clement, 93430Villetaneuse, France.A. Nekrasov, A.N. Frumkin Institute of Electrochemistry, Leninskii Pr. 31, 117071Moscow, Russia.J. Nomgaudyte, Department of Physics, Faculty of Environmental Sciences, VytautasMagnus University, Donelaicio 58, 3000 Kaunas, Lithuania.M. Novojilov, Division of Inorganic Chemistry, Department of Chemistry, StateUniversity, Vorob'evy Gory, Moscow 119899, Russia.S. Orlando, CNR - IMS, Zona Industriale di Tito Scalo, 85050 Tito Scalo (Potenza),Italy.K. Oskomov, Institute of High Current Electronics, Siberian Division, RussianAcademy of Sciences, 4 Akademichesky Avenue, 634055 Tomsk, Russia.P. Patsalas, Aristotle University of Thessaloniki, Department of Physics, Solid StatePhysics Section, 54006 Thessaloniki, Greece.Y. Pauleau, National Polytechnic Institute of Grenoble, CNRS-LEMD, B.P.l66, 38042Grenoble cedex 9, France.M. Pereira, Universidade do Minho, Departamento de Fisica, Campus de Gualtar, 4710­057 Braga, Portugal.Liudas Pranevicius, Physics Department, Vytautas Magnus University, 28 DaukantoStreet, 3000 Kaunas, Lithuania.Liudvikas Pranevicius, Vytautas Magnus University, Physics Department, 58Donelaicio st., 3000 Kaunas, Lithuania.J. Puiso, Physics Department, Kaunas University of Technology, Studentu 50, 3031Kaunas, Lithuania.C. Ricciardi, Politecnico di Torino, Departimento di Fisica, Corso Duca degli Abruzzi,24, 10129 Torino, Italy.S. Samoilenkov, IOPW, Technical University of Braunschweig, Bienroder Weg 53,38108 Braunschweig, Germany.S.c. Sandu, Departement de Physique des Materiaux, Universite Claude Bernard, Lyon1,43 Boulevard du II Novembre 1918,69622 Villeurbanne, France.A.A. Soliman, Ain-Shams University, Faculty of Science - Physics Department,Abbassia-11566-Cairo-Egypt.T. Spila, University of Illinois, Coordinated Science Laboratory, 1-139 EngineeringSciences Building, 1101 West Springfield Avenue, Urbana, Illinois 61801, USA.D. Sporn, Fraunhofer-Institut flir Silicatforschung ISC, Neunerplatz 2, 97082Wlirzburg, Germany.S. Spyrou, National Hellenic Research Foundation, Theoretical and Physical ChemistryInstitute, 48 Vas. Constantinou Avenue, Athens 116-35, Greece.N. Sulitanu, "Al.I.Cuza" University of lasi, Faculty of Physics, Department of SolidState Physics, II Carol I Boulevard, 6600 lasi, Romania.

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F. Thi~ry, CNRS - LEMD, B.P. 166,38042 Grenoble cedex 9, France.D. Tonneau, Facult~ des Sciences de Luminy, CNRS - Groupe de Physique des EtatsCondenses, Case 901, 163 Avenue de Luminy, 13288 Marseille Cedex 9, France.V. Uglov, Belarussian State University, Physics of Ion-Plasma Modification of Solids,Pr. F. Scoriny 4, 220080 Minsk, Belarus.A. Valyaev, Nuclear Safety Institute, Russian Academy of Science, 52 B. Tulskaya,Moscow 113191, Russia.A. Vaskelis, Institute of Chemistry, A. Gostauto 9,2600 Vilnius, Lithuania.G. Wahl, Institut ffir Oberflachentechnik und Plasmatechnische Werkstoffenwicklung,Technische Universitlit Braunschweig, Bienroder Weg 53, 38108 Braunschweig,Germany.

LIST OF CONTRIBUTORS

T.P. CASSAGNEAUMax Planck Institute for Colloids andInterfacesGolm, Germany

TEG. DAENENPhilips Galvanotechniek EindhovenEindhoven, The Netherlands

CM. GIlMOREThe George Washington UniversityWashington D.C., U.S.A.

W. GULBINSKITechnical University of KoszalinKoszalin, Poland

l.HOUEMANUniversity of TwenteEnschede, The Netherlands

S.l.C IRVINEUniversity of Wales BangorU.K.

CR. KLEIlNDelft University of TechnologyDelft, The Netherlands

M.KONUMAMax-P1anck-lnstitut fUrFestkorperforschungStuttgart, Germany

S.MATHURSaarland UniversitySaarbriicken, Germany

Y.PAULEAUNational Polytechnic Institute of GrenobleGrenoble, France

L. PRANEVICIUSVytautas Magnus UniversityKaunas, Lithuania

D.SPORNFraunhofer-Institut fUr SilicatforschungWiirzburg, Germany

D. TONNEAUCentre National de la RechercheScientifiqueMarseille, France

G. WAHLTechnische Universitat BraunschweigBraunschweig, Germany

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